CN109052309A - A kind of semiconductor devices and preparation method thereof and electronic device comprising it - Google Patents
A kind of semiconductor devices and preparation method thereof and electronic device comprising it Download PDFInfo
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- CN109052309A CN109052309A CN201810822268.1A CN201810822268A CN109052309A CN 109052309 A CN109052309 A CN 109052309A CN 201810822268 A CN201810822268 A CN 201810822268A CN 109052309 A CN109052309 A CN 109052309A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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Abstract
The invention discloses a kind of semiconductor devices, preparation is on substrate, it include: diaphragm structure, back pole plate structure and back chamber, it is characterised in that: the diaphragm structure includes: intermediate vibrating diaphragm and peripheral vibrating diaphragm, and the fine crack being made of the intermediate vibrating diaphragm and the peripheral vibrating diaphragm；The intermediate vibrating diaphragm is fixed over the substrate by several discrete anchor points, and the periphery vibrating diaphragm is fixed over the substrate by a film circle.This structure by vibrating diaphragm opposing seal designs, and can promote device low frequency performance.Invention additionally discloses a kind of preparation methods of semiconductor devices, and the electronic device including semiconductor devices.
Description
Technical field
The present embodiments relate to the semiconductor devices and its preparation side of a kind of semiconductor devices more particularly to a kind of acoustics
Method.
Background technique
In semiconductor field, a kind of MEMS device is acoustic transducer, which can experience the vibration of air caused by sound
It is dynamic so that the movable electrode plate in acoustic transducer is forced to simple harmonic oscillation, cause the variation of analog signal, finally believe sound
Number it is converted into electric signal.Acoustic transducer mainly includes vibrating diaphragm, i.e. movable electrode plate；Back pole plate, i.e. fixed plate electrode；Carry on the back chamber knot
Structure, i.e. sound pressure signal enter channel.
Fig. 1 is a kind of existing acoustic transducer structure, wherein vibrating diaphragm, back pole plate (insulation including electrode layer and thereon
Layer), the through-hole being arranged on back pole plate is the acoustic aperture of device, and vibrating diaphragm and substrate constitute the back chamber of device together.Pass through vibrating diaphragm 11
Fixed on substrate by several anchor points, this frame mode is easy so that vibrating diaphragm has biggish sensitivity, but simultaneously blow-by,
Cause the low frequency behavior of device bad.
Summary of the invention
The embodiment of the present invention provides a kind of semiconductor devices, can provide a kind of better device of acoustical behavior.
The semiconductor devices of the embodiment of the present invention, preparation is on substrate, comprising: diaphragm structure, back pole plate structure and back chamber,
Wherein the diaphragm structure includes: intermediate vibrating diaphragm and peripheral vibrating diaphragm, and is made of the intermediate vibrating diaphragm and the peripheral vibrating diaphragm
Fine crack, the intermediate vibrating diaphragm is fixed over the substrate by several discrete anchor points, and the periphery vibrating diaphragm is fixed by a film circle
Over the substrate.
Semiconductor devices provided in an embodiment of the present invention realizes the closure of structure by an external film circle；It is interior
The discrete anchor point in portion, allows vibrating diaphragm to obtain bigger mechanical sensitivity；It is realized by the fine crack between the polysilicon of inside and outside
It electrically isolates, the relative closure design of vibrating diaphragm is able to ascend device low frequency performance.
Optionally, the vibrating diaphragm is cylinder, and the discrete anchor point is cylindrical body, round table-like body, shape of a hoof cylinder and U-shaped
Any one in cylinder.
Optionally, on the discrete anchor point is symmetricly set between the intermediate vibrating diaphragm and substrate, quantity is 4,6,8
It is a, 10 or 20.By the selection of quantity, while realizing that discrete anchor point supports vibrating diaphragm, moreover it is possible to vibrating diaphragm be made to keep enough
Flexibility.
Optionally, the intermediate vibrating diaphragm is similar round, and the similar round is surrounded by several extensions, the intermediate vibration
Film is fixed over the substrate by the extension.
By the way that extension is arranged, anchor point is carried out by vibrating diaphragm extension and is fixed, so that internal discrete anchor point is far from vibrating diaphragm, this
So that the size design of dorsal pore has very large space, the back of large scale (vibrating diaphragm can be greater than and effectively shake area) may be implemented
Hole, can also encapsulate in bottom end and realize higher sensitivity, and on top, more excellent low frequency behavior is realized in encapsulation.
Optionally, the cross section of the extension is semicircle, half elliptic shape or the shape of a hoof, and quantity is 4,6,8
It is a, 10 or 20.
Optionally, the outer profile of the shape of the fine crack and the intermediate vibrating diaphragm matches.
Optionally, the width of the fine crack is not more than the 1/2 of the vibrating diaphragm thickness.
The adjusting for device low frequency behavior may be implemented in the design for designing the width of the fine crack, so that the design
Encapsulate for top can be used for bottom end encapsulation again.
The present invention also provides a kind of electronics embodiments, and it includes semiconductor devices above-mentioned.
The present invention also provides a kind of preparation methods of semiconductor devices, include the following steps:
Prepare a substrate；
Intermediate vibrating diaphragm and peripheral vibrating diaphragm, the discrete anchor point of fixed intermediate vibrating diaphragm and fixed periphery are formed in the substrate face
One film circle of vibrating diaphragm；
Back pole plate and acoustic aperture are formed on the vibrating diaphragm；
Gap is formed between the back pole plate and the vibrating diaphragm, the shape between the intermediate vibrating diaphragm and the peripheral vibrating diaphragm
Back chamber is formed at fine crack, and in the substrate back, device preparation is completed.
Optionally, described the step of substrate face forms anchor point and vibrating diaphragm, it specifically includes:
The first insulating layer is formed in the front of the substrate, is patterned that form one first recessed to first insulating layer
Slot and the second groove, first groove and the second groove expose the part substrate；
Diaphragm materials layer is formed on the first insulating layer, and the diaphragm materials layer fills first groove and second
Groove, and cover first insulating layer；
The diaphragm materials layer is patterned, the edge of first insulating layer is exposed, forms the intermediate vibration
Film and peripheral vibrating diaphragm, a film circle of the discrete anchor point of the fixed intermediate vibrating diaphragm and the fixed peripheral vibrating diaphragm.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is a kind of existing semiconductor device structure schematic diagram；
Fig. 2 to Fig. 4 is the semiconductor device structure schematic diagram that a specific embodiment of the invention provides；
Fig. 5 to Fig. 9 is the semiconductor device structure schematic diagram that another specific embodiment of the present invention provides；
Figure 10 is the preparation flow figure of semiconductor devices provided in an embodiment of the present invention；
Figure 11 to Figure 20 is the preparation step schematic diagram for the semiconductor devices that one embodiment of the invention provides；
Wherein appended drawing reference is
100 be existing semiconductor devices: wherein 10 be substrate；11 be vibrating diaphragm；12 be electrode layer；13 be insulating layer；14 are
Carry on the back chamber；15 be acoustic aperture；16 be anchor point.
200 be one embodiment of the invention semiconductor devices: wherein 20 be substrate；21 be vibrating diaphragm；211 be intermediate vibrating diaphragm；212
For peripheral vibrating diaphragm；22 be electrode layer；23 be insulating layer；24 be back chamber；25 be acoustic aperture；261 be discrete anchor point；262 be film circle；
27 be fine crack.
400 be one embodiment of the invention semiconductor devices: wherein 40 be substrate；41 be vibrating diaphragm；411 be intermediate vibrating diaphragm；412
For peripheral vibrating diaphragm；4111 be extension；42 be electrode layer；43 be insulating layer；44 be back chamber；45 be acoustic aperture；461 be discrete anchor
Point；462 be film circle；47 be fine crack；401 be first medium layer；403 be second dielectric layer；S1 is substrate face；S2 is substrate
The back side；410 be control special chip；420 be metal cover；430 be encapsulation base material；440 be metal；450 be bottom end opening；460
For top end opening.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
It describes to send out herein with reference to the cross-sectional view of the schematic diagram as desirable embodiment (and intermediate structure) of the invention
Bright embodiment.As a result, it is contemplated that from the variation of shown shape as caused by such as manufacturing technology and/or tolerance.Therefore,
The embodiment of the present invention should not necessarily be limited to the specific shape in area shown here, but including due to for example manufacturing caused shape
Shape deviation.For example, being shown as the injection region of rectangle usually has round or bending features and/or implantation concentration ladder at its edge
Degree, rather than binary from injection region to non-injection regions changes.Equally, which can lead to by the disposal area that injection is formed
Some injections in area between the surface passed through when injection progress.Therefore, the area shown in figure is substantially schematic
, their shape is not intended the true form in the area of display device and is not intended to limit the scope of the invention.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions
Outside, the present invention can also have other embodiments.
Fig. 2 to Fig. 4 shows the structural schematic diagram of the semiconductor devices 200 of one embodiment of the invention, and Fig. 3 is semiconductor
The diaphragm portion structural schematic diagram of device 200, Fig. 4 are that the partial cross section of this conductor device 200 along the interface A-A ' of vibrating diaphragm shows
It is intended to.Its preparation of semiconductor devices 200 is on substrate 20, comprising: vibrating diaphragm 21, back pole plate (including electrode layer 22 and insulate thereon
Layer 23), back chamber 24 and acoustic aperture 25, vibrating diaphragm 21 includes: intermediate vibrating diaphragm 211 and peripheral vibrating diaphragm 212, and by intermediate vibrating diaphragm and periphery
The fine crack 27 of vibrating diaphragm composition, intermediate vibrating diaphragm 211 are fixed on substrate 20 by several discrete anchor points 261, and peripheral vibrating diaphragm 212 is thin by one
Film circle 262 is fixed on substrate 20.
Semiconductor devices provided in an embodiment of the present invention realizes the closure of structure by external continuous anchor point；It is interior
The discrete anchor point in portion, allows vibrating diaphragm to obtain bigger mechanical sensitivity；It is realized by the fine crack between the polysilicon of inside and outside
It electrically isolates.The relative closure of vibrating diaphragm designs, and is able to ascend device low frequency performance.
Discrete anchor point can be any one in cylindrical body, round table-like body, shape of a hoof cylinder and U-shaped cylinder.Discrete anchor point
Setting can be designed according to concrete condition, a kind of mode is to be symmetricly set on intermediate vibrating diaphragm edge, and quantity can be 4,6,8
It is a, 10 or 20, with can preferably support vibrating diaphragm without lose flexibility preferably.By the selection of quantity, realize discrete
While anchor point supports vibrating diaphragm, moreover it is possible to vibrating diaphragm be made to keep enough flexibilities.
The shape of intermediate vibrating diaphragm is not fixed, and in one embodiment, intermediate vibrating diaphragm is circle, intermediate vibrating diaphragm and peripheral vibrating diaphragm
Form a fine crack.In this configuration, intermediate vibrating diaphragm is directly anchored on substrate by discrete anchor point, one whole circle of peripheral vibrating diaphragm
Film sticks on substrate, and the sealing of intermediate vibrating diaphragm is realized by this structure.The relative closure of vibrating diaphragm designs, and can preferably mention
Rise device low frequency performance.
Peripheral vibrating diaphragm is centered around outside intermediate vibrating diaphragm, forms fine crack between intermediate vibrating diaphragm.In a specific embodiment should
The profile of the shape of fine crack and intermediate vibrating diaphragm matches.The width of fine crack can be designed according to device performance, may be implemented pair
In the adjusting of device low frequency behavior, so that the design can be used to top encapsulation and can be used for bottom end encapsulation again.It is specific at one
In embodiment, the width of fine crack is not more than the 1/2 of vibrating diaphragm thickness.
Intermediate vibrating diaphragm is the movable electrode of device, and back pole plate is fixed electrode, and back chamber is that sound pressure signal enters channel.Substrate
Material can be silicon substrate, be also possible to germanium, germanium silicon, gallium arsenide substrate or silicon-on-insulator substrate.Those skilled in the art
It can according to need selection substrate, therefore the type of substrate should not limit the scope of the invention.Back pole plate can be polycrystalline
Silicon and silicon nitride superposition, can also only use polysilicon.
Fig. 5 to Fig. 7 is 400 structural schematic diagram of semiconductor devices of another specific embodiment of the invention, and Fig. 6 is partly to lead
The diaphragm portion structural schematic diagram of body device 400, Fig. 7 are the partial cross section of this conductor device 400 along the interface A-A ' of vibrating diaphragm
Schematic diagram.Its preparation of semiconductor devices 400 is on substrate 40, comprising: vibrating diaphragm 41, back pole plate (including electrode layer 42 and exhausted thereon
Edge layer 43), back chamber 44 and acoustic aperture 45, vibrating diaphragm 41 includes: intermediate vibrating diaphragm 411 and peripheral vibrating diaphragm 412, and by intermediate vibrating diaphragm and outer
The fine crack 47 of vibrating diaphragm composition is enclosed, intermediate vibrating diaphragm 411 is fixed on substrate 40 by several discrete anchor points 461, and peripheral vibrating diaphragm 412 is by one
Film circle 462 is fixed on substrate 40.
Intermediate vibrating diaphragm is similar round, and similar round is surrounded by several extensions 4111, and the discrete setting of anchor point 461 is extending
Below portion, for intermediate vibrating diaphragm 411 to be fixed on substrate 40.The shape of the cross section of extension can design as needed, can
For semicircle, half elliptic shape or the shape of a hoof.The quantity of extension can be designed according to the quantity of discrete anchor point, can for 4,
6,8,10,20 or other can preferably support the quantity of intermediate vibrating diaphragm.
Virtual coil indicates the position of back chamber in Fig. 6, by the way that extension is arranged on intermediate vibrating diaphragm, by setting on extension
Set discrete anchor point intermediate vibrating diaphragm is fixed fixed on substrate, so that internal discrete anchor point may be located remotely from vibrating diaphragm, this to carry on the back chamber
Size design has very large space, and the back chamber of large scale (can be greater than vibrating diaphragm and effectively shake area) may be implemented.Fig. 8 is partly to lead
The bottom end package structure diagram of body device 400, wherein control special chip (referred to as: asic chip) 410 and semiconductor devices
400 are encapsulated in the structure that the top formed by metal cover 420, encapsulation base material 430 and 440 multiple-layer stacked of metal constitute bottom end together
In；The bottom end opening 450 that bottom end is made of encapsulation base material 430 and 440 multiple-layer stacked of metal is located at as sound passage.Above-mentioned back
Cavity configuration can make back chamber opening bigger, and bigger acoustic pressure source can be provided to the packing forms semiconductor devices of bottom end opening
So signal-to-noise ratio can more be increased.Fig. 9 is the top package structure diagram of semiconductor devices 400, is located at the top on metal cover 420
End opening 460 is used as sound passage, and in this packing forms, back cavity volume is vibration back chamber, and volume is bigger, and low frequency behavior is got over
It is excellent.
One embodiment of preparation method (referring to Figure 10) of semiconductor devices of the invention, includes the following steps:
Step S1001 prepares a substrate；
Step S1002 forms intermediate vibrating diaphragm and peripheral vibrating diaphragm in substrate face, the discrete anchor point of fixed intermediate vibrating diaphragm and solid
One film circle of fixed periphery vibrating diaphragm；
Step S1003 forms back pole plate and acoustic aperture on vibrating diaphragm；
Step S1004 forms gap between back pole plate and vibrating diaphragm, is formed between intermediate vibrating diaphragm and peripheral vibrating diaphragm thin
Seam, and back chamber is formed in substrate back, device preparation is completed.
The semiconductor devices prepared by above-mentioned preparation process, wherein by the fixed intermediate vibrating diaphragm of discrete anchor point and passing through
The diaphragm structure of the fixed peripheral vibrating diaphragm composition favorable sealing property of one film circle, is realized by the fine crack between the vibrating diaphragm of inside and outside
It electrically isolates.
It is carried out below with reference to preparation method of the Figure 11 to Figure 20 to a specific implementation of semiconductor devices 400 of the invention
Detailed description, wherein Figure 11 to Figure 20 shows the cross-sectional view of the structure of the formation of the correlation step in preparation process.
In step S1001, provide a substrate 40, substrate has front S1 and back side S2 (see Figure 11).The material of substrate
It can be silicon substrate, be also possible to germanium, germanium silicon, gallium arsenide substrate or silicon-on-insulator substrate.Those skilled in the art can root
According to needing to select substrate, therefore the type of substrate should not limit the scope of the invention.Substrate in the present embodiment is preferably
Silicon substrate.The positive S1 and back side S2 of substrate are located at the opposite sides of substrate 40.
In step S1002, vibrating diaphragm and anchor point are formed in the positive S1 of substrate, forms structure as shown in figure 14.
Firstly, the positive S1 in substrate 40 forms first medium layer 401, first medium layer 401 is patterned to be formed
One groove, groove expose section substrate 40, as shown in figure 13.
Specifically, first medium layer 401 (see Figure 12) is deposited on the positive S1 of substrate 40, on first medium layer 401
It is formed photoresist layer (not shown), photoresist layer is exposed and is developed, the photoresist layer of image conversion is formed, exposes first
The position for making a reservation for be formed groove on dielectric layer 401, carves first medium layer 401 using patterned photoresist layer as exposure mask
Erosion, until exposing substrate 40, forms groove in first medium layer 401, removes patterned photoetching finally by cineration technics
Glue-line.Optionally, the material of first medium layer 401 is lamination or this field of silica, silicon nitride or silica and silicon nitride
Other materials known to technical staff.
Then, diaphragm materials layer is formed on first medium layer 401, diaphragm materials layer is specially polysilicon in this embodiment
Layer, diaphragm materials layer filling groove simultaneously cover first medium layer 401；Then, diaphragm materials layer is patterned, exposes
The edge of one dielectric layer 401 forms vibrating diaphragm 41, including the intermediate vibrating diaphragm 411 with extension 4111 and peripheral vibrating diaphragm 412, divides
Not Zhi Cheng intermediate vibrating diaphragm and peripheral vibrating diaphragm discrete anchor point 461 and film circle 462, as shown in figure 14.The material of diaphragm materials layer
It can also be other materials well known by persons skilled in the art.
The intermediate subsequent vibrating diaphragm as MEMS device of vibrating diaphragm 411, the material of vibrating diaphragm can choose polysilicon, germanium silicon, germanium or
Other flexible metals or semiconductor material, it is ensured that vibrating diaphragm by sound or inertia force etc. active force and after vibration deformation
It can also restore, and ensure that vibrating diaphragm has good electric conductivity.
In the present embodiment, it is preferred that discrete anchor point 461 is in cylindrical shape, round table-like or rectangular-shape or this field skill
Other structures known to art personnel.Discrete anchor point 461 is symmetricly set under intermediate vibrating diaphragm, and quantity can be 4,6,8,10
It is a or 20, intermediate vibrating diaphragm 411 relative to multiple discrete anchor points integral central pair composed by the projection of intermediate vibrating diaphragm 411
Claim.The present invention is to the structure and quantity of discrete anchor point 461 and without limitation.The film circle 462 of peripheral vibrating diaphragm 412 is supported also to synchronize
It is formed.
In the step s 1003, back pole plate and acoustic aperture are formed on vibrating diaphragm.With reference to shown in Figure 15 to Figure 19.
In step S1004, gap is formed between back pole plate and vibrating diaphragm, is formed between intermediate vibrating diaphragm and peripheral vibrating diaphragm
Fine crack, and back chamber is formed in substrate back, device preparation is completed.
It describes in detail below to step S1003 and step S1004:
Electrode layer 42 is formed on intermediate vibrating diaphragm 411, forms structure as shown in figure 18.
Specifically, firstly, forming second dielectric layer 403 on intermediate vibrating diaphragm 411, as shown in figure 15.It should be noted that
Second dielectric layer 403 can be identical with the material of first medium layer 401；Certainly, second dielectric layer 403 can also using with
The different material of first medium layer 401, the present invention is to this and without limitation.
Second dielectric layer 403 covers vibrating diaphragm and first medium layer 401.Then, to second dielectric layer 403 and first medium
Layer 401 is patterned, specifically, forming patterned photoresist layer, in second dielectric layer 403 with patterned photoresist
Layer is exposure mask, performs etching to second dielectric layer 403 and first medium layer 401, exposes the edge of substrate 40, and second
Multiple grooves are formed in dielectric layer 403, as shown in figure 16.The depth of groove is less than the thickness of second dielectric layer 403, i.e. groove simultaneously
Vibrating diaphragm is not exposed.Optionally, groove is uniformly distributed in second dielectric layer 403, and groove is corresponding with vibrating diaphragm.Then again
First medium layer and second dielectric layer are etched to substrate, forms structure as shown in figure 17.
Then, an electrode layer 42 is formed, electrode layer 42 fills up groove and covers second dielectric layer 403 and substrate 40.Most
Afterwards, electrode layer 42 is patterned, i.e., forms patterned photoresist layer on electrode layer 42, with patterned photoresist layer
For exposure mask, electrode layer 42 is performed etching, exposes the edge of substrate 40 and the edge of second dielectric layer 403, forms electrode
Layer 42, as shown in figure 18.Polysilicon, germanium silicon or germanium may be selected in the material of electrode layer 42, can also be other metals such as aluminium, or
Other materials well known by persons skilled in the art.
Through-hole is formed on back pole plate.
Specifically, insulating layer 43 covers electrode layer 42, second dielectric layer 403 and substrate firstly, forming an insulating layer 43
40；Then, image conversion is carried out to insulating layer 43 and electrode layer 42, forms the multiple through-holes for exposing second dielectric layer 403, wherein
Electrode layer 42 and insulating layer 43 constitute the back pole plate of device together, and multiple through-holes are the acoustic aperture of device.Such as can by
Patterned photoresist layer is formed on insulating layer 43, exposes position of the through-hole of predetermined formation on third insulating layer, then
Using patterned photoresist layer as exposure mask, insulating layer 43 and electrode layer 42 are performed etching, until exposing second dielectric layer
403, multiple through-holes is formed in insulating layer 43 and electrode layer 42 (see Figure 19).Acoustic aperture of the through-hole as MEMS device.
Then, optionally, the 4th insulating layer (not shown) is formed on the positive S1 of substrate 40, the filling of the 4th insulating layer is logical
Hole, and insulating layer 43 and substrate 40 are covered, that is, the positive S1 of the 4th insulating layer covering substrate 40.It avoids subsequent to substrate 40
The back side the positive structure of substrate 40 is impacted when being operated.The material of 4th insulating layer is preferably silica, nitrogen
SiClx or silica/silicon nitride laminated construction or other materials well known by persons skilled in the art.
Then, groove is formed on the back side S2 of substrate 40, as shown in figure 20.Specifically, to the back side S2 of substrate 40 into
Row is graphical, forms the groove of exposure first medium layer 401.
Gap is formed between back pole plate and vibrating diaphragm, forms back chamber 44 between vibrating diaphragm and substrate, and forms intermediate vibration
Film, peripheral vibrating diaphragm, discrete anchor point and film circle, form structure as shown in Figure 5.
Specifically, will be formed in previous step using BOE (Buffered Oxide Etch, buffered oxide etch) method
Structure be placed in oxide etching liquid, etching liquid performs etching to exposing the first medium layer 401 by groove
The vibrating diaphragm forms back chamber 44 at the back side of substrate 40.During etching liquid performs etching first medium layer 401, carve
Erosion liquid simultaneously performs etching the 4th insulating layer, after removing the 4th insulating layer, is carved by through-hole to second dielectric layer 403
Erosion removes part second dielectric layer 403, forms the gap between the vibrating diaphragm and back pole plate.That is, the 4th insulation
The removal of layer, the formation in gap, diaphragm structure and back chamber 44, and form complete diaphragm structure and support construction etc., be
It is carried out in same processing step (i.e. BOE).
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of semiconductor devices, preparation is on substrate, comprising: diaphragm structure, back pole plate structure and back chamber, it is characterised in that:
The diaphragm structure includes: intermediate vibrating diaphragm and peripheral vibrating diaphragm, and is made of the intermediate vibrating diaphragm and the peripheral vibrating diaphragm thin
Seam；The intermediate vibrating diaphragm is fixed over the substrate by several discrete anchor points, and the periphery vibrating diaphragm is fixed on institute by a film circle
It states on substrate.
2. semiconductor devices as described in claim 1, it is characterised in that: the vibrating diaphragm is cylinder, and the discrete anchor point is
Any one in cylindrical body, round table-like body, shape of a hoof cylinder and U-shaped cylinder.
3. semiconductor devices as claimed in claim 2, it is characterised in that: the discrete anchor point is symmetricly set on the intermediate vibration
On between film and substrate, quantity is 4,6,8,10 or 20.
4. semiconductor devices as described in claim 1, it is characterised in that: the intermediate vibrating diaphragm is similar round, and the class is round
Shape is surrounded by several extensions, and the intermediate vibrating diaphragm is fixed over the substrate by the extension.
5. semiconductor devices as claimed in claim 4, it is characterised in that: the cross section of the extension is semicircle, half ellipse
Round shape or the shape of a hoof, quantity are 4,6,8,10 or 20.
6. semiconductor devices as described in claim 1, it is characterised in that: the shape of the fine crack and the intermediate vibrating diaphragm it is outer
Profile matches.
7. semiconductor devices as described in claim 1, which is characterized in that the width of the fine crack is not more than the vibrating diaphragm thickness
1/2.
8. a kind of electronic device, including semiconductor devices as described in any one of claim 1 to 7.
9. a kind of preparation method of semiconductor devices, which comprises the steps of:
Prepare a substrate；
Intermediate vibrating diaphragm and peripheral vibrating diaphragm, the discrete anchor point of fixed intermediate vibrating diaphragm and fixed peripheral vibrating diaphragm are formed in the substrate face
A film circle；
Back pole plate and acoustic aperture are formed on the vibrating diaphragm；
Gap is formed between the back pole plate and the vibrating diaphragm, is formed between the intermediate vibrating diaphragm and the peripheral vibrating diaphragm thin
Seam, and back chamber is formed in the substrate back, device preparation is completed.
10. the preparation method of semiconductor devices as claimed in claim 9, which is characterized in that described to form anchor in substrate face
It the step of point and vibrating diaphragm, specifically includes:
The substrate front formed the first insulating layer, first insulating layer is patterned to be formed one first groove and
Second groove, first groove and the second groove expose the part substrate；
Form diaphragm materials layer on the first insulating layer, the diaphragm materials layer fills first groove and second recessed
Slot, and cover first insulating layer；
The diaphragm materials layer is patterned, exposes the edge of first insulating layer, formed the intermediate vibrating diaphragm and
Peripheral vibrating diaphragm, a film circle of the discrete anchor point of the fixed intermediate vibrating diaphragm and the fixed peripheral vibrating diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810822268.1A CN109052309A (en) | 2018-07-25 | 2018-07-25 | A kind of semiconductor devices and preparation method thereof and electronic device comprising it |
Applications Claiming Priority (1)
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| CN110366084A (en) * | 2019-06-06 | 2019-10-22 | 七色堇电子科技（上海）有限公司 | A kind of semiconductor devices and preparation method thereof and electronic device |
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