CN109041583A - Solar cell device and solar cell module - Google Patents
Solar cell device and solar cell module Download PDFInfo
- Publication number
- CN109041583A CN109041583A CN201780021223.8A CN201780021223A CN109041583A CN 109041583 A CN109041583 A CN 109041583A CN 201780021223 A CN201780021223 A CN 201780021223A CN 109041583 A CN109041583 A CN 109041583A
- Authority
- CN
- China
- Prior art keywords
- electrode
- solar cell
- region
- substrate
- cell device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 230000002093 peripheral effect Effects 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000006071 cream Substances 0.000 description 43
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 40
- 238000000034 method Methods 0.000 description 31
- 239000004411 aluminium Substances 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000011049 filling Methods 0.000 description 13
- 238000010304 firing Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000004615 ingredient Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 239000006058 strengthened glass Substances 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- -1 Diol ester Chemical class 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Solar cell device has the 3rd electrode of semiconductor substrate, passivating film, the 1st electrode, the 2nd electrode and 1 or more.Passivating film is located on semiconductor substrate, has multiple 1st hole portions.1st electrode is located in each 1st hole portion, is electrically connected with semiconductor substrate.2nd electrode is electrically connected with the 1st electrode, is located on passivating film.1 or more the 3rd electrode is electrically connected via the 2nd electrode with the 1st electrode, and the position linearly extended is located on the 1st direction.Passivating film is under plane perspective, the ratio for including the area shared by multiple 1st hole portions in 1st region adjacent with 1 or more the 3rd electrode is less than the part of the ratio of area shared by multiple 1st hole portions in the 2nd region, 2nd region is located at the position than the 1st region far from 1 or more the 3rd electrode, and identical as the 1st region area.
Description
Technical field
This disclosure relates to solar cell device and solar cell module.
Background technique
As one of structure of solar battery (also referred to as solar cell device) that can promote light-to-current inversion efficiency
Known PERC (Passivated Emitter and Rear Cell, emitter passivation and back side battery) structure.
Solar cell device with PERC structure for example has passivating film at the back side of silicon substrate.In turn, the sun
Energy cell device has the back side of the substantially entire surface of the electrode positioned at the position of perforation passivating film and the back side positioned at silicon substrate
Electrode.
Summary of the invention
Disclose solar cell device and solar cell module.
One scheme of solar cell device is a kind of solar cell device, is had: semiconductor substrate, passivating film,
3rd electrode of the 1st electrode, the 2nd electrode and 1 or more.The passivating film is located on the semiconductor substrate, has multiple
1st hole portion.1st electrode is located in each 1st hole portion, is electrically connected with the semiconductor substrate.2nd electrode,
It is electrically connected with the 1st electrode, is located on the passivating film.Described 1 or more the 3rd electrode, via the 2nd electrode
It is electrically connected with the 1st electrode, the position linearly extended is located on the 1st direction.The passivating film is under plane perspective, tool
Have: the ratio of area shared by multiple 1st hole portions described in the 1st region adjacent with described 1 or more the 3rd electrode is less than
The part of the ratio of area shared by multiple 1st hole portions described in the 2nd region, the 2nd region are located at remoter than the 1st region
The position of the 3rd electrode from described 1 or more, it is identical as the 1st region area.
One scheme of solar cell module is a kind of solar cell module, is had: the solar-electricity of above scheme
Pond element；With the jointing for being located at the position extended to the 1st direction on described 1 or more the 3rd electrode.
Detailed description of the invention
Fig. 1 is the top view for indicating an example of the appearance of the 1st surface side of solar cell device involved in the 1st embodiment.
Fig. 2 is the top view for indicating an example of the appearance of the 2nd surface side of solar cell device involved in the 1st embodiment.
Fig. 3 is the end view drawing for indicating an example of the end face of solar cell device of the III-III line along Fig. 1 and Fig. 2.
Fig. 4 is the plane perspective view for indicating the distribution of the 1st hole portion in passivating film involved in the 1st embodiment.
Fig. 5 (a) is that amplification schematically illustrates near the 1st electrode of solar cell device involved in the 1st embodiment
Part state end view drawing.Fig. 5 (b) is that amplification schematically illustrates solar cell device involved in the 1st embodiment
The top view of the state of part near 1st electrode.
Fig. 6 (a) to Fig. 6 (f) is the manufacturing method for illustrating solar cell device involved in the 1st embodiment
End view drawing.
Fig. 7 (g) to Fig. 7 (i) is the manufacturing method for illustrating solar cell device involved in the 1st embodiment
End view drawing.
Fig. 8 (a) is an example for indicating the appearance of the 1st surface side of solar cell module involved in the 1st embodiment
Top view.Fig. 8 (b) is bowing for an example for the appearance of the 2nd surface side for indicating solar cell module involved in the 1st embodiment
View.
Fig. 9 (a) is to indicate to connect the top view of an example of the state of jointing in solar cell device.Fig. 9 (b) is
Indicate the end view drawing of an example for the state for connecting 2 solar cell devices jointing.
Figure 10 is the distribution for indicating the 1st hole portion in passivating film involved in the 1st embodiment and the position of jointing
Relationship plane perspective view.
Figure 11 is point for the solar panel that exploded representation constitutes solar cell module involved in the 1st embodiment
Solve end view drawing.
Figure 12 is the end view drawing for indicating an example of end face of solar cell device involved in the 2nd embodiment.
Specific embodiment
Illustrate each embodiment below based on attached drawing.Phase is marked to the part with same structure and function in attached drawing
Same appended drawing reference omits repeated explanation in following explanations.In addition, being the figure that signal is indicated, there is omission constituent element
A part situation.The XYZ coordinate system of right-handed system is added in Fig. 1 to Figure 12.It, will be along solar energy in the XYZ coordinate system
The direction on 1 side of cell device 10 is set as +X direction, will be set as the side+Y along with this 1 direction in another 1 intersected
To +Z direction will be set as with +X direction and the upright direction handed over of +Y direction two.
" 1. the 1st embodiments >
< 1-1. solar cell device >
If Fig. 1 is to as shown in Figure 3, solar cell device 10 mainly has the positioned at table (front) side of light incidence
The 2nd face 10b of 1 face 10a and the opposite side (back side) positioned at the 1st face 10a.
In addition, semiconductor substrate used in solar cell device 10 (also referred to as substrate) 1 similarly has the 1st face
The 2nd face 1b of 1a and the opposite side positioned at the 1st face 1a.Substrate 1 includes the semiconductor regions of the 1st conductivity type (such as p-type)
The 1st semiconductor layer 2；With the semiconductor of the 2nd conductivity type (such as N-shaped) of the 1st face side 1a being located in the 1st semiconductor layer 2
2nd semiconductor layer 3 in region.
Illustrate the solar battery member that the silicon of the polycrystalline of p-type or monocrystalline is used as to substrate 1 (or the 1st semiconductor layer 2) below
Part 10, as an example.
Thickness of the substrate 1 for example with 100 μm to 250 μm degree.If 1 side under the shape of substrate 1 such as overlook view
Length 150mm to 200mm degree substantially quadrilateral shape, be respectively provided with substrate 1 a large amount of solar cell devices 10 arrange
At the production of solar cell module 20 (refer to Fig. 8 (a) and Fig. 8 (b)) just become easy.But the flat shape of substrate 1
And there is no limit for size.Here, such as can by making silicon substrate contain boron and/or gallium n-type impurity as doping
Element can generate the 1st semiconductor layer 2 of p-type semiconductor region.
2nd semiconductor layer 3 is located on the 1st semiconductor layer 2.In addition, the 2nd semiconductor layer 3 is the 1 with the 1st semiconductor layer 2
The semiconductor layer of the 2nd opposite conductivity type of conductivity type (being N-shaped in the 1st embodiment).Thus in the 1st semiconductor layer 2 and the 2nd half
Pn-junction portion is formed between conductor layer 3.The p-type impurity conduct such as the 1st face side 1a of substrate 1 can be made to contain phosphorus of 2nd semiconductor layer 3
Doped chemical is formed.
As shown in Figure 3, the 1st face 1a of substrate 1 has the fine bumps of the reflectivity of the light for lowering irradiation
Structure (texture).Thus it can lower the reflection of light in the 1st face side 1a of substrate 1.The height of the protrusion of texture is, for example, 0.1 μm and arrives
10 μm of degree.In addition, the length between the top of the adjacent protrusion of texture is, for example, 0.1 μm to 20 μm degree.
In addition, solar cell device 10 has antireflection film 5 and surface electrode 7 in the 1st face side 10a.And then too
Positive energy cell device 10 has rear electrode 8 and passivating film 4 in the 2nd face side 10b.
Antireflection film 5 can lower the reflectivity for being irradiated to the light of the 1st face 10a of solar cell device 10.Thus, it is possible to
Promote the light-to-current inversion efficiency of solar cell device 10.Antireflection film 5 is such as can be as silica, aluminium oxide or silicon nitride
Insulating film or their stacked film are constituted.The refractive index and thickness of antireflection film 5, as long as such as sunlight can be worked as
The middle light by the wave-length coverage that substrate 1 absorbs and can help to power generation realizes low conditioned reflex.Such as passing through plasma
Chemical vapor-phase growing (PECVD:Plasma Enhanced Chemical Vapor Deposition) method form a film silicon nitride it is anti-
Penetrate the reflection that the thickness of refractive index and 60nm to 120nm degree with 1.8 to 2.5 degree is able to achieve in the case where preventing film 5
Prevent film 5.
Surface electrode 7 is the electrode positioned at the 1st face side 1a of substrate 1 as shown in Figure 1.Surface electrode 7 for example with
The finger electrode 7b of multiple (in the example of Fig. 1 3) bus electrode 7a and multiple (in the example of Fig. 1 40) threadiness.
Bus electrode 7a is linearly located in Y-direction in the example of fig. 1.Bus electrode 7a is e.g. used for will be in base
Electrode of the electricity output that plate 1 is obtained with light-to-current inversion to the outside of solar cell device 10.Bus electrode 7a is for example with 1mm
To the width of 3mm degree.In addition, the intersection substantially vertical with electrode 7b is referred to of at least part of bus electrode 7a, and be electrically connected.
Refer to that electrode 7b can collect carrier that is corresponding with light incident in substrate 1 and generating, and is transmitted to bus electrode
7a.Refer to that electrode 7b is located at the position extended in the X direction.Refer to width of the electrode 7b for example with 30 μm to 200 μm degree.It is multiple
Refer to that electrode 7b is located at the position for being mutually spaced apart the interval of 1mm to 3mm degree.Here, surface electrode 7 is for example in the 1st face of substrate 1
The side 1a is located at the position of the Y-direction of the peripheral part 1Ed along substrate 1, has shape same as electrode 7b is referred to, can be further
Refer to electrode 7c with the pair that multiple finger electrode 7b are electrically connected to each other.
Such as after it will be coated into desired shape as the conductive paste of principal component using silver by silk-screen printing etc., by this
Conductive paste firing, can be consequently formed surface electrode 7.Here, principal component indicate to allow relative to whole ingredient containing ratio
For the ingredient of 50 mass % or more.In description below, principal component also illustrates that meaning same as this.Be burnt into conductive paste and
Thickness of the surface electrode 7 of formation for example with 7 μm to 40 μm degree.
Passivating film 4 is located at the substantially entire surface on the 2nd face 1b of substrate 1.Passivating film 4 has multiple 1st hole portions 9.Here, each
1st hole portion 9 is located at the position for penetrating through passivating film 4 in a thickness direction.Passivating film 4 for example lowers the interface of substrate 1 and passivating film 4
The defects of level, coupling again for the minority carrier near the interface can be lowered.Passivating film 4 for example can be by silica, oxygen
Change the insulating films such as aluminium or silicon nitride or their stacked film is constituted.Thickness of the passivating film 4 for example with 6nm to 100nm degree.
In the 1st embodiment, in the case where the 1st semiconductor layer 2 has the conductivity type of p-type, as passivating film 4, such as it can make
Film with aluminium oxide etc. has the film of negative fixed charge.Here, according to for example with the passivating film 4 of negative fixed charge,
It will be because the field effect of passivating film 4 be to which minority carrier, that is, electronics is far from the interface of substrate 1 and passivating film 4.Thus subtract
Low such as substrate 1 couples again with the minority carrier near the interface of passivating film 4.
The passivating film 4 being made of aluminium oxide is for example with atomic layer deposition (ALD:Atomic Layer Deposition) method
Etc. the substantially entire surface being formed on the 2nd face 1b.And then the 1st hole portion 9 can use YAG (yttrium, aluminium, garnet) laser device, from
Laser beam is irradiated on passivating film 4 and is formed in the arbitrary position in passivating film 4.
Rear electrode 8 is the electrode positioned at the 2nd face side 1b of substrate 1 like that as shown in FIG. 2 and 3.Rear electrode 8
Such as there is the 1st electrode 8a, the 2nd electrode 8b and the 3rd electrode 8c.
1st electrode 8a is located in the 1st hole portion 9 of passivating film 4.As shown in Figure 3, the 1st electrode 8a is located at multiple 1st holes
In the respective through hole in portion 9.That is, there are multiple 1st electrode 8a.1st electrode 8a is electrically connected with substrate 1.Such as the 1st electrode 8a
1 end abutted with the 2nd face 1b of substrate 1.1 end is, for example, the perforation for being located at the 1st hole portion 9 in the 1st electrode 8a
The end of 1 side of substrate on direction.Thus the 1st electrode 8a for example can collect carrier in the 2nd face 1b of substrate 1.In addition,
Another 1 end of 1st electrode 8a is electrically connected with the 2nd electrode 8b.Another 1 end is, for example, to be located at the 1st hole in the 1st electrode 8a
The end with 1 opposite side of substrate on the perforation direction in portion 9.Thus the carrier that can for example collect the 1st electrode 8a passes
It is delivered to the 2nd electrode 8b.Here, the cross sectional shape of the 1st electrode 8a for example can be circle when carrying out plane perspective to the 2nd face 10b
Any one of shape, ellipticity or rectangle are also possible to band-like (threadiness).1st electrode 8a is for example with 60 μm to 500 μm degree
Diameter (or width).
2nd electrode 8b is located on passivating film 4.2nd electrode 8b is electrically connected with the 1st electrode 8a and the 3rd electrode 8c both sides.
The 1st electrode 8a carrier collected can be for example transmitted to the 3rd electrode 8c by the 2nd electrode 8b.The 2nd electrode 8b is formed in for example thus
In substantially entire surface other than a part in the region on the 2nd face 1b, in addition to forming peripheral end and the 3rd electrode 8c,
To cover most 1st electrode 8a.
1st electrode 8a and the 2nd electrode 8b can for example be formed as follows.Firstly, in the passivating film 4 with the 1st hole portion 9
On with silk-screen printing etc. be coated with using aluminium as the conductive paste of principal component.At this moment, conductive paste enters the 1st hole portion 9, also is located at blunt
Change on film 4.Then the 1st electrode 8a and the 2nd electrode 8b is formed by the way that conductive paste to be burnt into.Here, such as the 1st electrode 8a
Film thickness it is equal with the film thickness of passivating film 4.The thickness of 2nd electrode 8b is for example set as 15 μm to 50 μm degree.
If here, for example forming the 1st electrode 8a using the conductive paste containing aluminium BSF will be formed in substrate 1
(Back Surface Field: back skin region) layer 13.Such as on passivating film 4 after conductive paste of the coating containing aluminium,
Conductive paste is burnt into the given temperature curve of the maximum temperature more than fusing point with aluminium.The 1st electrode 8a is consequently formed,
Cause the phase counterdiffusion of element between the aluminium and substrate 1 in conductive paste.As a result, being formed in substrate 1 containing than the 1st half
The BSF layer 13 of the aluminium of 2 higher concentration of conductor layer.Here, since aluminium can become the doping of p-type, mixing contained by BSF layer 13
Miscellaneous concentration is higher than the concentration of the doping contained by the 1st semiconductor layer 2.In this way, in BSF layer 13, than the 1st semiconductor layer 2
In the higher concentration of concentration of doped chemical of the 1st conductivity type there are the doped chemicals of the 1st conductivity type.BSF layer 13 is in substrate 1
The 2nd face side 1b formed internal electric field.Minority carrier can be lowered again near the surface of the 2nd face 1b in substrate 1 thus
Coupling.Its result is difficult to the reduction for the light-to-current inversion efficiency of solar cell device 10 occur.BSF layer 13 can for example pass through diffusion
Surface section etc. the 2nd face side 1b that makes substrate 1 contains the doped chemicals such as boron or aluminium and is formed.Mixing contained by the 1st semiconductor layer 2
The concentration of miscellaneous element is for example set as 5 × 1015atoms/cm3To 1 × 1017atoms/cm3Degree.Doping contained by BSF layer 13
The concentration of element is for example set as 1 × 1018atoms/cm3To 5 × 1021atoms/cm3Degree.
3rd electrode 8c is located on the 2nd face 1b of substrate 1.3rd electrode 8c is via the 2nd electrode 8b and the 1st electrode 8a electricity
Connection.3rd electrode 8c, which is present in, clips the position opposed with bus electrode 7a of substrate 1.Here N number of above (N is natural number)
3rd electrode 8c is each located on to the position that the 1st direction (+Y direction in the example of Fig. 2) linearly extends.3rd electrode 8c is for example
It is electrode of the electricity output for will be obtained in substrate 1 by light-to-current inversion to the outside of solar cell device 10.3rd electrode
8c is located on passivating film 4 or is located at linear position to penetrate through the state of passivating film 4, under overlook view not with the 1st electrode 8a
Overlapping.Such as the 3rd electrode 8c there is the thickness of 5 μm to 30 μm degree and the width of 1mm to 7mm degree.Here, for example can also be with
As shown in Figure 2, multiple 3rd electrode 8c are located at towards 2nd direction (in the example of Fig. 2 +X direction) orthogonal with the 1st direction
The position of arrangement.The current dissipation generated by the light-to-current inversion in substrate 1 can for example be made as a result, and be output to solar battery
The outside of element 10.As a result, the series resistance component of solar cell device 10 can be lowered.
In addition, each 3rd electrode 8c can be as shown in Figure 2, there are the multiple island portions linearly arranged to +Y direction.
In addition, the shape of each 3rd electrode 8c can be same as the shape of bus electrode 7a, it is formed continuously on the 2nd face 1b from substrate 1
The side-Y end to the side+Y end linear region.Wherein, there is the case where multiple island portions in the 3rd electrode 8c
Under, to the 2nd face 10b plane perspective, the 1st electrode 8a or passivating film 4 and the 2nd electrode 8b can be between multiple island portions.By
This can promote the light-to-current inversion efficiency of solar cell device 10.In addition, carrying out plane perspective to the 2nd face 10b, such as can allow
2nd electrode 8b is Chong Die with the peripheral part of the 3rd electrode 8c.In addition, the 3rd electrode 8c can have the main part of the electrode of such as rectangle
Be located at from the protruding portion of main part position outstanding.In this case, it if covering protruding portion with the 2nd electrode 8b, can incite somebody to action
3rd electrode 8c and the 2nd electrode 8b electrical connection.In addition, if the 3rd electrode 8c is for example principal component comprising the silver that can be brazed or copper,
Can in the manufacturing process of solar cell module by ribbon shape connection conductor jointing and the 3rd electrode 8c simply
Connection.Such as after by silk-screen printing etc. being coated into desired shape as the conductive paste of principal component using silver, by the conduction
Property cream firing, the 3rd electrode 8c can be consequently formed.
The function of the solar cell device 10 of the 1st embodiment will be illustrated next.In the solar-electricity of the 1st embodiment
In pond element 10, as shown in Figure 4, plane perspective is carried out, passivating film 4 has multiple 1st hole portion, 9 institutes in the 1st region A1
The ratio of the area accounted for is less than the part of the ratio of area shared by multiple 1st hole portions 9 in the 2nd region A2.Here, the 1st area
A1 plane perspective of being expert in domain is the region adjacent with the 3rd electrode 8c.In addition, the 2nd region A2 is located at than the
1 region A1 further from the 3rd electrode 8c position and have region of the same area with the 1st region A1.
However when the firing by the conductive paste containing metal is to form the 1st electrode 8a and the 2nd electrode 8b, such as
The ingredient (such as silicon) of substrate 1 is diffused into the 1st electrode 8a and the 2nd electrode 8b.In addition, the 1st electrode 8a and the 2nd electrode 8b
Thickness it is smaller, be more easy to generate the diffusion of the ingredient of substrate 1.By there is the diffusion of such ingredient, in the 1st hole portion 9
Nearby, the 1st electrode 8a and the metal component of the 2nd electrode 8b and the ingredient of substrate 1 are reacted, to form the high area of resistance
Domain (also referred to as high resistance area).Thus in the solar cell device 10 of the 1st embodiment, plane is carried out to the 2nd face 10b
Perspective makes the distribution of multiple 1st hole portions 9 become above-mentioned such, and there are areas shared by multiple 1st hole portions 9 in the 1st region A1
Part of the ratio less than the ratio of area shared by multiple 1st hole portions 9 in the 2nd region A2.Thus, it is possible to lower the 1st embodiment
Series resistance component in the equivalent circuit of solar cell device 10.As a result, the light of solar cell device 10 can be improved
Electric conversion efficiency.
Especially as shown in Fig. 5 (a), BSF layers are formed in substrate 1 there are in the case where BSF layer 13 as described above
When 13, the semiconductor components such as silicon are diffused into the 2nd electrode 8b.The alloy containing silicon and aluminium is formed in the 2nd electrode 8b as a result,
The high part of resistance (also referred to as high resistance portion) 8bh.High resistance portion 8bh in 2nd electrode 8b is greater than the 1st electrode 8a.For
This is as shown in Fig. 5 (b), and when to the 2nd face 10b plane perspective, the area of plane of high resistance portion 8bh is greater than the 1st hole portion 9
The area of plane.In addition, in solar cell device 10, if the uniform intensity distribution of the light received, in addition to forming surface electricity
Other than the position of pole 7, it can be transferred through light-to-current inversion and substantially evenly generate carrier.Wherein the flow direction of carrier is for defeated
3rd electrode 8c of electric current out.At this moment, current density shows the tendency bigger closer to the 3rd electrode 8c.
Thus in the 1st embodiment, when carrying out plane perspective to the 2nd face 10b, multiple 1st electricity of per unit area
The contact area of pole 8a and the 2nd electrode 8b is smaller closer to the 3rd electrode 8c.That is, when to the 2nd face 10b plane perspective, mutual
Between the 3rd adjacent electrode 8c, there is passivating film 4 ratio of area shared by multiple 1st hole portions 9 of per unit area to get over
The part smaller close to the 3rd electrode 8c.Specifically, as shown in Figure 2, it is contemplated that N number of 3rd electrode 8c includes from the side+X to the side-X
The case where the 1st the 3rd electrode 8c1,2 the 3rd electrode 8c2 and 3 the 3rd electrode 8c3 of arrangement.In this case, as shown in Figure 4 that
Sample carries out plane perspective to the 2nd face 10b, in passivating film 4, in the 1st the 3rd electrode 8c1 adjacent to each other and the 2nd the 3rd electrode
Between 8c2, the ratio of area shared by multiple 1st hole portions 9 is smaller closer to the 1st the 3rd electrode 8c1 or the 2nd the 3rd electrode 8c2.Separately
Outside, plane perspective is carried out to the 2nd face 10b, in passivating film 4, in the 2nd the 3rd electrode 8c2 and the 3rd the 3rd electrode 8c3 adjacent to each other
Between, the ratio of area shared by multiple 1st hole portions 9 is smaller closer to the 2nd the 3rd electrode 8c2 or the 3rd the 3rd electrode 8c3.That is, example
Such as to the 2nd face 10b plane perspective, between the 3rd electrode 8c adjacent to each other, there are multiple 1st electrode 8a and the 2nd electrodes
The contact area of the per unit area of the 8b region smaller closer to the 3rd electrode 8c.For example current density is relatively large as a result,
Region, ratio shared by the high resistance portion 8bh of per unit area is with regard to smaller.As a result, can for example lower solar battery
Series resistance component in the equivalent circuit of element 10.Therefore the light-to-current inversion efficiency of solar cell device 10 can be promoted.
Following further clarification can improve the structural example of the light-to-current inversion efficiency of solar cell device 10.
As described above, as shown in Figure 4, plane perspective is carried out, passivating film 4 is included adjacent with the 3rd electrode 8c
The ratio of area shared by more the 1st hole portions 9 of 1st region A1 is less than the area shared by more the 1st hole portions 9 of the 2nd region A2
The small part of ratio, wherein the 2nd region A2 be located at than the 1st position of the region A1 far from the 3rd electrode 8c, and with the 1st region A1
Area is identical.
In addition, in solar cell device 10, such as when to the 2nd face 10b plane perspective, region d1 is located at: the 1 the
Between the region that the 2nd the 3rd adjacent electrode 8c2 of the region and the region that 3 electrode 8c1 are located at is located at.In the region
D1, it is mobile to the 3rd nearest electrode 8c of the position in ± X-direction in the carrier that substrate 1 is generated by light-to-current inversion.For this purpose,
In region d1, center portion with the +X direction from region d1 can be made to the direction k1 (+X direction) and the direction k2 (- X
Direction) allow current density to become larger.In contrast, as shown in Figure 4, such as to the 2nd face 10b plane perspective, if each 1st hole portion
9 size is identical, then in region d1, the adjacent mutual distance between centers of the 1st hole portion 9 becomes smaller, so that the central portion of +X direction
The number of 1st hole portion 9 of the per unit area near point is most.In other words, such as to the 2nd face 10b plane perspective, in region
D1, near the center portion of +X direction, the ratio of area shared by multiple 1st hole portions 9 of per unit area becomes maximum.So
Afterwards for example to the 2nd face 10b plane perspective, in region d1, using the center portion of +X direction as boundary, with going to the direction k1 (+X
Direction) and the direction k2 (-X direction), slowly or periodically, the adjacent mutual distance between centers of the 1st hole portion 9 becomes larger, and makes
The presence for obtaining the 1st hole portion 9, which becomes, dredges.The series resistance component for example in the equivalent circuit of solar cell device 10 lowers as a result,.
As a result, the light-to-current inversion efficiency of solar cell device 10 can be promoted.Here, for example carrying out plane perspective to the 2nd face 10b
When, it is so-called to be gone in the d1 of region the direction k1 (+X direction), indicate the area being located in the d1 of region close to the 1st the 3rd electrode 8c1
Domain.In addition, for example when carrying out plane perspective to the 2nd face 10b, it is so-called to be gone in the d1 of region the direction k2 (-X direction), it indicates
The region that d1 is located at close to the 2nd the 3rd electrode 8c2 in region.
In addition, region d2 is located at for example when to the 2nd face 10b plane perspective: being located at the +X direction side of substrate 1
Between the region that peripheral part (also referred to as right side peripheral part) 1EdR and the 1st the 3rd electrode 8c1 is located at.In region d2, such as can
Become smaller with the adjacent mutual distance between centers of the 1st hole portion 9, so that in the 1st hole of the right side peripheral part side 1EdR per unit area
The number in portion 9 is most.That is, plane perspective for example is carried out to the 2nd face 10b, it can be in the right side peripheral part side 1EdR of region d2, often
The ratio of area shared by multiple 1st hole portions 9 of unit area becomes maximum.In this case, such as to the 2nd face 10b it carries out
It, can be slowly or periodically, adjacent with being gone to the direction k4 (-X direction) from the right side peripheral part side 1EdR when plane perspective
The mutual distance between centers of 1st hole portion 9 becomes larger, and dredges so that the presence of the 1st hole portion 9 becomes.Here, for example being carried out to the 2nd face 10b flat
It is so-called to be gone to the direction k4 (-X direction) in region d2 from the right side peripheral part side 1EdR when face is had an X-rayed, it indicates in region d2 close to the 1st
The region that 3rd electrode 8c1 is located at.
Similarly, such as when carrying out plane perspective to the 2nd face 10b, region d3 is located at: in the -X direction for being located at substrate 1
Between the region that peripheral part (also referred to as left side peripheral part) 1EdL and the 3rd the 3rd electrode 8c3 of side is located at.In region d3, example
The mutual distance between centers of the 1st hole portion 9 as can also be adjacent becomes smaller, so that in the left side peripheral part side 1EdL per unit area
The number of 1st hole portion 9 is most.That is, plane perspective for example is carried out to the 2nd face 10b, it can be in the left side peripheral part 1EdL of region d3
The ratio of side, area shared by multiple 1st hole portions 9 of per unit area is maximum.In this case, for example, to the 2nd face 10b into
When row plane perspective, with the direction k5 (+X direction) is gone to from the left side peripheral part side 1EdL, slowly or periodically, adjacent
The mutual distance between centers of 1 hole portion 9 becomes larger, and dredges so that the presence of the 1st hole portion 9 becomes.Here, for example the 2nd face 10b is carried out it is flat
It is so-called to be gone to the direction k5 (+X direction) in region d3 from the left side peripheral part side 1EdL when face is had an X-rayed, it indicates in region d3 close to the 3rd
The region that 3rd electrode 8c3 is located at.
In turn, such as in the case where the 3rd electrode 8c has multiple island portions, plane perspective is being carried out to the 2nd face 10b
When, passivating film 4 can have closer to island portion area shared by multiple 1st hole portions 9 of per unit area in +Y direction
The smaller part of ratio.In other words, such as when carrying out plane perspective to the 2nd face 10b, there may be closer to island portion the 1st
The smaller region of the contact area of the per unit area of electrode 8a and the 2nd electrode 8b.Here, the connection being connect with the 3rd electrode 8c
Connector is connect along +Y direction (or -Y direction) with the 3rd electrode 8c.For this purpose, electricity flows to jointing from solar cell device 10
Direction become +Y direction (or -Y direction).For this purpose, for example in region d1, it can be with the direction k3 (+Y direction) be gone to, slowly
Or periodically, the adjacent mutual distance between centers of the 1st hole portion 9 becomes larger, and dredges so that the presence of the 1st hole portion 9 becomes.Here, k3
Direction is from the -Y direction side of the region d1 i.e. side end d1a towards the side+Y of the region d1 of the opposite side positioned at end d1a
To side, that is, end side d1b direction.The series resistance in the equivalent circuit of solar cell device 10 can for example be lowered as a result,
Component.Its result can promote the light-to-current inversion efficiency of solar cell device 10.
In addition, passivating film 4 can be the two of the longitudinal direction of the 3rd electrode 8c for example when to the 2nd face 10b plane perspective
The ratio of area shared by multiple 1st hole portions 9 between end and the peripheral part 1Ed of substrate 1 with per unit area is closer
3rd electrode 8c smaller part.Herein as shown in Figure 2, it is contemplated that the 3rd electrode 8c is longitudinal direction (being ± Y-direction here)
The case where upper 1st end E1 with -Y direction side and the 2nd end E2 with the 1st end E1 opposite side (+Y direction side).
In this case, as shown in Figure 4, plane perspective such as to the 2nd face 10b is carried out, in the longitudinal direction of the 3rd electrode 8c,
Passivating film 4 can have between the 1st region being located at end E1 and upside peripheral part 1EdU closer to the 3rd electrode 8c more
The smaller part of the ratio of area shared by 1st hole portion 9.Here, upside peripheral part 1EdU is the peripheral part 1Ed positioned at substrate 1
The part of the 1st end side E1 in the middle.In addition, for example plane perspective is carried out to the 2nd face 10b, in the longitudinal direction of the 3rd electrode 8c
On, passivating film 4 can have between the 2nd region being located at end E2 and downside peripheral part 1EdB closer to the 3rd electrode 8c
The smaller part of the ratio of area shared by multiple 1st hole portions 9.Here, downside peripheral part 1EdB is the peripheral part 1Ed of substrate 1
The part positioned at the 2nd end side E2 in the middle.
Plane perspective is carried out for other viewpoints, such as to the 2nd face 10b, it can be in passivating film 4, in the 3rd electrode 8c
In the longitudinal direction in the region being located at, deposited between the 1st end E1 part 1 En1 being located at and upside peripheral part 1EdU
The smaller part of the smaller part example of the ratio of the area shared by more the 1st hole portions 9 of closer 3rd electrode 8c.In addition, for example
Plane perspective is carried out to the 2nd face 10b, it can be in passivating film 4, in the longitudinal direction in the region that the 3rd electrode 8c is located at, the
Exist between the 2 end E2 part 2 En2 being located at and downside peripheral part 1EdB closer to more the 1st hole portions 9 of the 3rd electrode 8c
The smaller part of the ratio of shared area.In other words, plane perspective such as to the 2nd face 10b is carried out, there may be closer to the
The smaller region of the contact area of the per unit area of 3 electrode 8c the 1st electrode 8a and the 2nd electrode 8b.
In addition, as shown in Figure 4, such as plane perspective is carried out to the 2nd face 10b, region d4 is located at the -Y direction of substrate 1
Between the region that peripheral part (upside peripheral part) 1EdU and the 2nd the 3rd electrode 8c2 of side is located at.It, can also be in region d4
Such as with the direction k6 (+Y direction) for going to the area side that the 2nd the 3rd electrode 8c2 is located at from the upside peripheral part side 1EdU, slowly
Slowly or periodically, the adjacent mutual distance between centers of the 1st hole portion 9 becomes smaller, and dredges so that the presence of the 1st hole portion 9 becomes.In addition,
As shown in Figure 4, such as to the 2nd face 10b plane perspective is carried out, in the peripheral part (downside peripheral part) of the +Y direction of substrate 1
The region between region that 1EdB and the 3rd electrode 8c are located at, and with the direction k7 (-Y direction) is gone to, it is slowly or interim
Ground, the adjacent mutual distance between centers of the 1st hole portion 9 become larger, and dredge so that the 1st hole portion 9 becomes.Thus, it is possible to lower solar battery member
The series resistance component of the equivalent circuit of part 10.Its result can promote the light-to-current inversion efficiency of solar cell device 10.
Furthermore it is possible to as shown in Figure 4, such as between the end d1b of the peripheral part 1Ed and region d1 of substrate 1
Region d6 etc. between the end of the +Y direction of the peripheral part 1Ed and region d2 of region d5 and substrate 1, multiple 1st hole portions 9
It is arranged to be uniformly distributed.But it is slowly or interim such as there may also be the 2nd end E2 at closer 3rd electrode 8c
Ground allows the 1st hole portion 9 to become and dredges.Specifically, for example, substrate 1 peripheral part 1Ed downside peripheral part 1EdB positioned at +Y direction with
Each region between region d1, d2, d3, exist into close to be located most closely to the 3rd electrode 8c position end direction (
The referred to as direction k8) on slowly or periodically allow multiple 1st hole portions 9 to become to dredge.In addition, similarly, such as in the peripheral part of substrate 1
Each region between the upside peripheral part 1EdU and region d1, d2, d3 positioned at -Y direction of 1Ed exists into close to positioned at most
It slowly or periodically allows multiple 1st hole portions 9 to become on the direction (direction k8) of the end of the position of the 3rd electrode 8c to dredge.
Such as using solar cell device 10 of the polycrystalline silicon substrate of 150mm to 160mm degree, the 1st
The contact area of the per unit area of electrode 8a and the 2nd electrode 8b is set as shown below in the duplicate experiment of inventors
Value.The contact area of the central portion of +X direction in the part of the end side d1a of region d1 is set as 6mm2/cm2To 15mm2/
cm2Degree.In addition, most being connect on the direction k1 (+X direction) of the part of the end side d1a of region d1 or the direction k2 (-X direction)
The contact area of the part of nearly 3rd electrode 8c is set as 2mm2/cm2To 5.9mm2/cm2Degree.In addition, the end d1b of region d1
The contact area of the central portion of +X direction in the part of side is set as, 2mm2/cm2To 5.9mm2/cm2Degree.In addition, area
The direction k1 (+X direction) or the direction k2 (-X direction) in the part of the end side d1b of domain d1 closest to the 3rd electrode 8c's
Partial contact area is set as 0.1mm2/cm2To 1.9mm2/cm2Degree.
The contact area of the per unit area of the 1st electrode 8a and the 2nd electrode 8b in solar cell device 10 can be as follows
It measures like that.Such as the 2nd electrode is removed with the part of the 2nd face side 10b of the grinding solar cell device 10 such as sand paper first
8b.Thus expose the end contacted in the 1st electrode 8a with the 2nd electrode 8b.Then the 1st is measured using optical microscopy etc.
The area etc. of the end of electrode 8a.In addition, solar cell device 10 can for example be made to be immersed in 5 mass % to 30 mass % journeys
The aqueous solution of the hydrochloric acid of the concentration of degree dissolves the 1st electrode 8a and the 2nd electrode 8b, thus makes to constitute passivating film by aluminium oxide etc.
4 expose, and the area of the 1st hole portion 9 is measured using optical microscopy etc..
The manufacturing method of < 1-2. solar cell device >
The each process of the manufacturing method of solar cell device 10 will be illustrated next.
Prepared substrate 1 first as shown in Fig. 6 (a).Substrate 1 can be monocrystalline silicon or polysilicon.Substrate 1 for example passes through
The production such as existing CZ method or casting.Explanation uses the example of the polycrystalline silicon substrate of p-type as substrate 1 below.Here, example
Such as with the ingot of casting production polysilicon.The resistivity of ingot for example can be 1 Ω cm to 5 Ω cm degree.Here, making
For doped chemical, such as the addition boron in polysilicon.Next, the ingot of polysilicon is sliced with wire sawing apparatus,
Obtain multiple substrates 1.The thickness at length of the substrate 1 for example with 1 side about the table back side of the square shape of 160mm and 200 μm of degree
Degree.If being mixed later in the whole face that the table of substrate 1 is carried on the back with such as sodium hydroxide (NaOH), potassium hydroxide (KOH) or hydrofluoric acid-nitric acid
Close the etching that the aqueous solutions such as acid implement denier, the mechanical damage layer and pollution layer generated when can remove the slice of substrate 1.
Furthermore it is possible to form the texture for lowering the reflection of light in the 1st face 1a of substrate 1 as shown in Fig. 6 (b).
Texture for example by using the wet etching of the acid solutions such as the aqueous slkalis such as NaOH or hydrofluoric acid-nitric acid mixed acid or uses RIE
The dry-etching of (Reactive Ion Etching, reactive ion etching) method etc. is formed.
Next as shown in Fig. 6 (c), the surface section in the 1st face side 1a of textured substrate 1 forms the 2nd of N-shaped
Semiconductor layer 3.2nd semiconductor layer 3 is formed such as can pass through and be coated with thermal diffusion method or gas phase thermal diffusion method.It is coated with thermal diffusion method
Phosphorus pentoxide (P paste will be e.g. made into2O5) be coated on the 1st face 1a of substrate 1 and make phosphorus diffusion to base by heating
The method of the surface section of the 1st face side 1a of plate 1.Gas phase thermal diffusion method is will to become gasiform phosphorus oxychloride (POCl3) conduct
The method in the diffusion source of phosphorus.2nd semiconductor layer 3 is for example formed as thickness and 40 Ω/ to 200 with 0.1 μm to 2 μm degree
The electrical sheet resistance value of Ω/ degree.Here, having for example in gas phase thermal diffusion method by POCl3Etc. compositions diffusion gas
Atmosphere in, 600 DEG C to 800 DEG C degree at a temperature of, implement the heat treatment of 5 minutes to 30 minutes degree to substrate 1, by phosphorus
Silicate glass (also referred to as PSG) is formed on the surface of substrate 1.Later, in the inert gas atmospheres such as such as argon or nitrogen,
At a temperature of 800 DEG C to 900 DEG C degree are high, implement the heat treatment of 10 minutes to 40 minutes degree to substrate 1.Phosphorus is from PSG as a result,
It is diffused into the surface section of substrate 1, so that the surface section in the 1st face side 1a of substrate 1 forms the 2nd semiconductor layer 3.
In the formation process of the 2nd semiconductor layer 3, in the case where the 2nd face side 1b also forms the 2nd semiconductor layer 3, with erosion
Carve the 2nd semiconductor layer 3 for removing and being formed in the 2nd face side 1b.Thus make the 1st semiconductor layer 2 of p-type in the 2nd face side 1b of substrate 1
Expose.Here, for example the 2nd face 1b of substrate 1 is immersed in hydrofluoric acid-nitric acid mixed acid solution, removing is formed in the 2nd face side 1b
The 2nd semiconductor layer 3.The PSG for the 1st face side 1a for being attached to substrate 1 is removed with etching when forming 2 semiconductor layer 3 later
It goes.At this moment the 2nd semiconductor layer 3 of the side for being formed in substrate 1 can also also be removed.
Next it as shown in Fig. 6 (d), is formed for example on the 1st semiconductor layer 2 of the 2nd face side 1b by aluminium oxide structure
At passivating film 4.As the forming method of passivating film 4, such as ALD method or PECVD etc. can be used.If here, for example using
ALD method, then the covering rate (Coverage) of the passivating film 4 of the 2nd face 1b of substrate 1 will be promoted.Thus, it is possible to promote 4 band of passivating film
The passivation effect come.
When forming passivating film 4 with ALD method, the substrate of the 2nd semiconductor layer 3 is formed in the intracavitary mounting of film formation device first
1.Then in the state that substrate 1 to be heated to the temperature field of 100 DEG C to 250 DEG C degree, repeatedly process A as shown below
To step D.Thus, it is possible to be formed with the passivating film 4 of desired thickness being made of aluminium oxide on substrate 1.Process A is to step D
Content as follows.
[process A] will be used to form the raw material of the aluminium such as the trimethyl aluminium (TMA) of aluminium oxide and Ar gas or nitrogen etc. carry
Sub- gas is flowed to provide together on the intracavitary substrate 1 of film formation device.Thus the raw material of Al adsorption is enclosed in the complete cycle of substrate 1.It mentions
Time for TMA is, for example, 15m seconds to 3000m seconds degree.
[process B] carries out the intracavitary purification of film formation device by nitrogen.Thus the raw material of intracavitary aluminium is removed.This
When, it further removes physical absorption and is chemisorbed in the raw material of the aluminium of substrate 1, in addition to the suction of atomic layer grade chemicals
The raw material of aluminium other than attached ingredient.Here, being, for example, 1 second to tens of seconds degree by the time in nitrogen purify cavity.
[process C] provides the oxidants such as water or ozone gas to the intracavitary of film formation device.At this moment, alkane contained in TMA
Base is removed, and is replaced by OH base.Thus the atomic layer of aluminium oxide is formed on substrate 1.Oxidant was provided to the intracavitary time
E.g. 500 milliseconds to 1500 milliseconds degree.In addition, here, if providing hydrogen atom, shape together to intracavitary and oxidant
At aluminium oxide film in be easy to containing hydrogen atom.
[step D] carries out the intracavitary purification of film formation device by nitrogen.Thus intracavitary oxidant is removed.At this moment,
Such as the aluminium oxide of atomic layer grade on substrate 1 formation when remove not to the oxidant etc. that contributes of reaction.Here,
It is, for example, 1 second to tens of seconds degree by the time in nitrogen purify cavity.
Later by being repeated as many times process A to the series of processes of step D, can be formed for example with 6nm to 200nm degree
Desired film thickness aluminium oxide film.
It, can also there is illustrated the raw material as aluminium using TMA come raw material the case where forming aluminium oxide, but as aluminium
To use other raw materials.Such as it at a temperature of raw material in the range of can be set as -20 DEG C to 120 DEG C provides, is mentioned as gas
Supply source, such as the steam pressure appropriate with 100Pa or more can be used, in the intracavitary material that can be provided with gaseous state.Example
As can using triethyl aluminum (TEA) etc. as other raw materials.It as described above, can be in addition to as p-type half by using ALD method
Other than on 2nd face 1b of the 1st semiconductor layer 2 of conductive region, the complete cycle of the substrate 1 on the side comprising substrate 1 encloses to be formed
Passivating film 4.In this case, it such as can be formed on the passivating film 4 on the 2nd face 1b for being formed in substrate 1 by coating resistance to
After acid resist film etc., unwanted passivating film 4 is removed by etching with hydrofluoric acid etc..
Next as shown in Fig. 6 (e), it is anti-that the reflection comprising silicon nitride film is for example formed in the 1st face side 1a of substrate 1
Only film 5.Antireflection film 5 is formed such as can use PECVD or sputtering method.Using PECVD, such as thing
The preceding temperature that substrate 1 is heated to above to the temperature in film forming.Later, such as with nitrogen (N2) diluted silane (SiH4) and ammonia
(NH3) mixed gas after provide to heating substrate 1.Then so that intracavitary reaction pressure is become 50Pa to 200Pa, come
Make the ingredient plasma of mixed gas in glow discharge decomposition and be deposited on the 1st face 1a, antireflection film is consequently formed.
Here, film-forming temperature is, for example, 350 DEG C to 650 DEG C degree.In addition, the frequency of high frequency electric source needed for glow discharge is for example
It is 10kHz to 500kHz degree.Additionally, it is provided the flow of the gas of chamber is given to correspond to the suitable decisions such as the size of chamber.Make
For be supplied to chamber gas flow, such as be set as the range of 150sccm to 6000sccm.At this moment, for example, the flow A of silane with
The flow-rate ratio (B/A) of the flow B of ammonia is 0.5 to 15 degree.
Next as shown in Fig. 6 (f), multiple 1st hole portions 9 are formed in passivating film 4.Here, for example by substrate 1
The 2nd face side 1b irradiation utilize laser device laser beam, multiple 1st hole portions 9 can be formed with pattern as shown in Figure 4.
Swash in light device device, can use that (wavelength of laser beam is with Q-switch Nd:YAG (neodymium-doped, Yttrium-Aluminium-Garnet) laser
1064nm) or the 2nd harmonic wave of Nd:YAG laser (SHG, laser beam wavelength be 532nm) etc..Such as using band Q-switch
In the case where 2nd harmonic wave of Nd:YAG laser, such condition: frequency of oscillation 10kHz can be used, is exported from 7W to 10W,
Beam diameter is 100 μm of degree.Here, for example can not form the 1st hole portion 9 in the position for forming the 3rd electrode 8c.
Next as shown in Fig. 7 (g) to Fig. 7 (i), surface electrode 7 is formed as described below and (bus electrode 7a, is referred to
Electrode 7b, pair refer to electrode 7c) and rear electrode 8 (the 1st electrode 8a, the 2nd electrode 8b, the 3rd electrode 8c).
First as shown in Fig. 7 (g), surface electrode 7 is formed using the 1st cream 16.Here, as the 1st cream 16, such as
Using with the conductive paste of the metal powder of argentiferous as principal component.The metal powder for example can by main metal at
The silver powder for being divided into 0.05 μm to 20 μm degree of partial size or 0.1 μm to 5 μm degree is constituted.In addition, contain in the metal powder
The amount of silver can be set to the mass % degree of 65 mass % to 85 of the gross mass of conductive paste.In addition, the 1st cream 16 for example into
One step contains organic vehicle and frit.Here, the concentration that contains of the organic vehicle in the 1st cream 16 for example can be set to
The mass % degree of 5 mass % to 15 of the gross mass of conductive paste.In addition, frit in the 1st cream 16 containing concentration for example
It can be set to the mass % degree of 0.05 mass % to 10 of the gross mass of conductive paste.Here, using silk-screen printing by the 1st first
Cream 16 is coated into pattern shown in FIG. 1 in the 1st face side 1a of substrate 1.Then, the 1st cream 16 implementation after coating is for example being given
The processing for drying solvent evaporation at a temperature of fixed.
Next, forming the 3rd electrode 8c of rear electrode 8 using the 2nd cream 17 as shown in Fig. 7 (h).Here, making
For the 2nd cream 17, such as can be using the electric conductivity containing silver-colored powder, organic vehicle and frit as principal component etc.
Cream.2nd cream 17 can be same as above-mentioned 1st cream 16.As the rubbing method of the 2nd cream 17, such as silk screen print method etc. can be used.?
This, such as on passivating film 4 after the 2nd cream 17 of coating, the 2nd cream 17 is implemented at a given temperature to evaporate solvent to dry
Processing.
In turn, as shown in Fig. 7 (i), the 1st electrode 8a and the 2nd electrode 8b is formed using the 3rd cream 18.Here, making
For the 3rd cream 18, for example, by using having as principal component the conductive paste of the metal powder containing aluminium.The metal powder for example can be with
It is made of the aluminium powder that main metal component is 0.05 μm to 20 μm degree of partial size or 0.1 μm to 5 μm degree.In addition, the gold
The amount of aluminium contained in category powder can be set to the mass % degree of 65 mass % to 80 of the gross mass of conductive paste.Separately
Outside, the 3rd cream 18 for example further contains organic vehicle and frit.Here, organic vehicle in the 3rd cream 18 contains
Concentration for example can be set to the mass % degree of 5 mass % to 15 of the gross mass of conductive paste.In addition, the glass in the 3rd cream 18
The mass % degree of 0.05 mass % to 10 of the gross mass that for example can be set to conductive paste containing concentration of material.Here, first
It is coated with the 3rd cream 18 in the 2nd face side 1b of substrate 1, covers the 1st hole portion 9 formed.At this moment, if such as the 2nd of substrate 1
The almost whole face at the position of the not formed 3rd electrode 8c of the face side 1b is coated with the 3rd cream 18, then not having to the strict contraposition of progress can make
3rd cream 18 is filled into the inside of the 1st hole portion 9.As the rubbing method of the 3rd cream 18, such as silk screen print method etc. can be used.To coating
The processing at a given temperature drying solvent evaporation can be implemented in the 3rd cream 18 afterwards.
Later, the substrate 1 for being coated with the 1st cream 16, the 2nd cream 17 and the 3rd cream 18 is implemented to arrive at 700 DEG C in firing furnace
Maintain tens of seconds to the firing of dozens of minutes degree under the maximum temperature of 950 DEG C of degree.At this moment, each conductive paste (the 1st cream 16,
2nd cream 17 and the 3rd cream 18) sintering.Thus as shown in Figure 3 formed surface electrode 7 (bus electrode 7a, refer to electrode 7b with
And pair refers to electrode 7c) and rear electrode 8 (the 1st electrode 8a, the 2nd electrode 8b, the 3rd electrode 8c).In the firing, the 1st cream 16 is burnt
Wear antireflection film 5.Surface electrode 7 is formed as a result, is connect with the 2nd semiconductor layer 3 of the N-shaped of the 1st face side 1a of substrate 1.Separately
Outside, the 1st electrode 8a is formed by being filled in the firing of the 3rd cream 18 of the inside of the 1st hole portion 9.At this moment, with the 1st electrode 8a
Formation and the surface section of the 2nd face 1b of substrate 1 formed BSF layer 13.In turn, by being coated on the 2nd face side 1b of substrate 1
The firing of 3rd cream 18 forms the 2nd electrode 8b, covers the 1st hole portion 9.In turn, the 3rd electrode is formed by the firing of the 2nd cream 17
8c.At this moment, the 2nd cream 17 will not burn passivating film 4, and the 3rd electrode 8c can be formed on passivating film 4, and the 2nd cream 17 burns passivating film
4, so as to form the 3rd electrode 8c on the 1st semiconductor layer 2.Here, for example can be by being suitable for the glass in the 2nd cream 17 of adjustment
The ingredient of glass material controls the presence or absence of the burn-through of passivating film 4.It, can be in frit such as in the case where burning passivating film 4
With SiO2-BiO3The frit of-PbO system.It on the other hand, can be in frit such as in the case where burning passivating film 4
It is middle to use B2O3-SiO2The frit of-ZnO system.
< 1-3. solar cell module >
As shown in Fig. 8 (a) and Fig. 8 (b), solar cell module 20 has included multiple solar cell devices
10 solar panel 23；With the frame 24 for the peripheral part for being located at solar panel 23.Solar cell module 20 includes
Mainly receive face i.e. the 1st face 20a of light；With the 2nd face 20b at the back side for being equivalent to the 1st face 20a.And solar cell module
20 as shown in Fig. 8 (b), has terminal board 25 on the 2nd face 20b.In addition, wiring is for will be in the sun in terminal board 25
The electric power that energy battery module 20 generates provides the output cord 26 to external circuit.
With the 1st embodiment as escribed above in the solar cell device 10 for constituting solar cell module 20
Solar cell device 10.Here, solar cell device 10 adjacent in solar cell module 20 each other as Fig. 9 (a) with
And it is electrically connected like that with jointing 22 shown in Fig. 9 (b).For example with 0.1mm to 0.3mm journey in the jointing 22
The copper of the thickness of degree or the metal foil of aluminium.The metal foil is such as in surface coated with solder.The solder passes through plating or impregnating
The average thickness that can be formed for example with 5 μm to 30 μm degree.The width of the jointing 22 for example can be with solar-electricity
The width of the bus electrode 7a of pond element 10 is following on an equal basis.Thus, it is difficult to which solar cell device 10 is interfered by jointing 22
Light.In addition, jointing 22 can be connect with the substantially full surface of bus electrode 7a and the 3rd electrode 8c.Thus, it is possible to make
The resistive component of solar cell device 10 becomes smaller.Here, using for example with the generally square of 1 side 160mm degree
In the case where the substrate 1 at the table back side, using width and 260mm to 320mm with 1mm to 3mm degree in jointing 22
The jointing of the length of degree.
In addition, as shown in Fig. 9 (a), in more jointings 22 being connect with 1 solar cell device 10
1st jointing 22a is brazed the bus electrode 7a in the 1st face 10a of solar cell device 10.In addition, more jointings
The 2nd jointing 22b in 22 is brazed the 3rd electrode 8c in the 2nd face 10b of solar cell device 10.
Here, adjacent solar cell device 10 (solar cell device 10S, 10T) is used as shown in Fig. 9 (b)
Jointing 22 connects.Specifically, jointing 22 is for example included in the long side direction with soldering and solar cell device
The one end of the bus electrode 7a connection of the 1st face 10a of 10S；With to be brazed with the 2nd face 10b's of solar cell device 10T
Other ends of 3rd electrode 8c connection.It is such be connected to multiple (such as 5 to 10 degree) solar cell devices 10 it
Between repeat exist.That is, there is the solar battery tandem with the multiple solar cell devices 10 being linearly connected in series.
Here, solar cell module 20 for example has the company for being located at the position extended to the 1st direction on the 3rd electrode 8c
Connector 22.As described above, in solar cell device 10, carry out plane perspective, passivating film 4 include with the 3rd electrode
The ratio of area shared by multiple 1st hole portions 9 must be than the 1st region A1 far from the 3rd electricity less than position in the 1st 8c adjacent region A1
The part of the ratio of area shared by multiple 1st hole portions 9 in pole 8c and the 2nd region A2 of the same area with the 1st region A1.Change speech
It, such as to the 1st direction (+Y direction) closer to the island portion of the 3rd electrode 8c, the per unit of the 1st electrode 8a and the 2nd electrode 8b
The contact area of area is smaller.Such as shown in Figure 10, when carrying out plane perspective to passivating film 4, in the 1st direction (+Y
Direction) on, the end side in the side for being located at -Y direction, multiple 1st hole portions 9 most thickly exist, more with the 1st direction is gone to
A 1st hole portion 9, which exists to become, dredges.In contrast, in solar cell module 20, if jointing 22 is to adjacent solar energy
The direction that cell device 10 extends is the 1st direction (direction k9), then flows through electric current on the 1st direction in jointing 22.
In this case, such as by multiple 1st hole portions 9 there is above-mentioned distribution, thus the series resistance of solar cell module 20
Lower, the light-to-current inversion efficiency of solar cell module 20 can be promoted.
In addition, as shown in Fig. 8 (a), solar cell module 20 has more (such as 2 to 10 degree) upper
The solar battery tandem stated.Here, more solar battery tandems are for example spaced apart the given interval of 1mm to 10mm degree substantially
It is arranged in parallel.And the solar cell device 10 of each end of more solar battery tandems is each other for example with lateral wiring
27 soldering etc. and be electrically connected.The multiple solar cell devices 10 for for example constituting more solar battery tandems as a result, are connected
Electrical connection.In addition, in more solar battery tandems, the both ends that are electrically connected in series in multiple solar cell devices 10
2 solar cell devices 10 connect external export wiring 32 (with reference to Figure 11).
Solar cell module 20 have by light-transmitting substrate 28, surface side filling member 29, more solar battery tandems,
The solar panel 23 that back side filling member 30 and back side part 31 are laminated.The solar panel 23 is for example as follows
It is formed.
Prepare light-transmitting substrate 28, surface side filling member 29, back side filling member 30 and back side part 31 first.
Light-transmitting substrate 28 is for example made of the glass with translucency.Here, for example being arrived in glass using thickness 3mm
The blank glass of 5mm degree, strengthened glass, double-deck strengthened glass or hotline-reflective glass etc..
Surface side filling member 29 and back side filling member 30 for example respectively by ethene-vinyl acetate copolymer (EVA:
Ethylene vinyl acetate copolymer) or polyvinyl butyral (PVB) composition.In these surface side filling members
29 and back side filling member 30 in the thickness with 0.4mm to 1mm degree that is formed using T-die and extruder is for example passed through
The laminar filling member of degree.
Back side part 31 for example has the function of lowering the immersion from external moisture.Overleaf for example using folder in part 31
It holds the fluorine resin thin slice with against weather of aluminium foil or the poly terephthalic acid second of aluminium oxide or silica has been deposited
Diol ester (PET) thin slice etc..Here, for example hair will be used in from the incident light of the 2nd face side 20b of solar cell module 20
In the case where in electricity, back side part 31 can by with translucency glass or polycarbonate resin etc. constitute.
Next, as shown in Figure 11, on light-transmitting substrate 28 after allocation list surface side filling member 29, as described above
Stack gradually more solar battery tandems, back side filling member 30 and the back side part for connecting multiple solar cell devices 10
31 make laminated body.
Next the laminated body is placed on laminater.Then under reduced pressure, on one side pressurize laminated body while exist 100 DEG C
15 minutes to 1 hour degree are heated to 200 DEG C, can thus make solar panel 23.
Then as shown in Fig. 8 (a) and Fig. 8 (b), in the peripheral part installation frame 24 of solar panel 23, root
According to the mounting terminal box 25 on the back side part 31 for forming the 2nd face 20b is needed, solar cell module 20 is thus completed.
2. other embodiments of < >
The disclosure is not limited to an above-mentioned embodiment, can add a large amount of amendments within the scope of this disclosure and become
More.Such as firing when forming electrode can as having carried out being used to form constituent class surface electrode 7 and rear electrode 8 the
After the firing of 3 electrode 8c, separately carried out with the firing for being used to form the 1st electrode 8a and the 2nd electrode 8b.
The 2nd embodiment of < 2-1. >
Such as be shown in Fig.12 like that, it uses based on the solar cell device 10 of the first embodiment described above
It is further equipped with the solar cell device 10A of the 2nd embodiment of protective film 11.In the illustration in fig 12, protective film 11 is too
The 2nd face side 10b of positive energy cell device 10A is between passivating film 4 and the 2nd electrode 8b.In addition, protective film 11, which has, is located at the
The 2nd hole portion 19 in 1 hole portion 9.1 through hole that the 1st hole portion 9 is connected to the 2nd hole portion 19 is formed thus.In addition, the 1st electrode 8a
In addition to being located in the 1st hole portion 9, it is also located in the 2nd hole portion 19.In other words, the 1st electrode 8a is located at out of the 1st hole portion 9 to the 2nd hole
In portion 19.
Protective film 11 is constituted such as by the film of the film of silicon nitride or silica.Such as it by using PECVD or can splash
Method is penetrated to form the film of the silicon nitride of the film thickness with 2nm to 15nm degree.In addition, for example shape can be carried out by using PECVD
At the film of the silica of the film thickness with 2nm to 15nm degree.Such as in the case where the film of silicon nitride is used as protective film 11,
If the film thickness of protective film 11 is less than the film thickness of passivating film 4, constitutes the negative fixed charge of the aluminium oxide of passivating film 4 and constitute and protect
The positive fixed charge of the silicon nitride of cuticula 11 is compared and is had the advantage.The passivation effect effect of passivating film 4 is difficult to decrease thus.
The solar cell device 10A of above structure can for example pass through the above-mentioned passivating film 4 in the 1st embodiment
Protective film 11 is formed after formation process to make.Here, for example to the 2nd face side 1b formed passivating film 4 substrate 1 with it is above-mentioned
The same method of forming method of antireflection film 5 form protective film 11.Specifically, such as with using nitrogen in PECVD
Body provides on intracavitary substrate 1 after diluting the mixed gas of silane and ammonia.Then intracavitary reaction pressure is made to become 50Pa
Make the ingredient plasma of mixed gas in glow discharge decomposition to 200Pa and deposit on substrate 1, guarantor can be consequently formed
Cuticula 11.
In addition, the 2nd hole portion 19 for example can be similarly square with the forming method with the 1st hole portion 9 in the first embodiment described above
Method is formed.It specifically, such as can be by being formed simultaneously the 1st hole portion 9 and the 2nd hole portion 19 to laser beam is irradiated on protective film 11.
Protective film 11 if it exists, then for example when forming the 2nd electrode 8b, using aluminium as the firing of the 3rd cream 18 of principal component
When, it is difficult to occur the rotten of passivating film 4 because of the diffusion of aluminium or destroys.Thus, it is possible to maintain the passivation effect of passivating film 4.
The explanation of appended drawing reference
1 substrate (semiconductor substrate)
The 1st face 1a
The 2nd face 1b
2 the 1st semiconductor layers
3 the 2nd semiconductor layers
4 passivating films
5 antireflection films
7 surface electrodes
7a bus electrode
7b refers to electrode
7c pair refers to electrode
8 rear electrodes
The 1st electrode of 8a
The 2nd electrode of 8b
The high resistance portion of the 2nd electrode of 8bh
The 3rd electrode of 8c
The the 1st the 3rd electrode of 8c1
The the 2nd the 3rd electrode of 8c2
The the 3rd the 3rd electrode of 8c3
9 the 1st hole portions
10 solar cell devices
The 1st face 10a
The 2nd face 10b
11 protective films
13 BSF layers
16 the 1st cream
17 the 2nd cream
18 the 3rd cream
19 the 2nd hole portions
20 solar cell modules
The 1st face 20a
The 2nd face 20b
23 solar panels
24 frames
25 terminal boards
26 output cords
27 laterally wirings
28 light-transmitting substrates
29 surface side filling members
30 back side filling members
31 back side parts
32 outside export wirings
Claims (7)
1. a kind of solar cell device, which is characterized in that have:
Semiconductor substrate；
Passivating film is located on the semiconductor substrate, has multiple 1st hole portions；
1st electrode is located in each 1st hole portion, is electrically connected with the semiconductor substrate；
2nd electrode is electrically connected with the 1st electrode, is located on the passivating film；With
1 or more the 3rd electrode is electrically connected with the 1st electrode via the 2nd electrode, and is arranged on the 1st direction
It is linear to extend,
The passivating film is under plane perspective, comprising: more described in the 1st region adjacent with described 1 or more the 3rd electrode
The ratio of area shared by a 1st hole portion is less than the portion of the ratio of area shared by multiple 1st hole portions described in the 2nd region
Point, the 2nd region is located at the position than 3rd electrode of the 1st region far from described 1 or more, with the 1st region area
It is identical.
2. solar cell device according to claim 1, which is characterized in that
The solar cell device is further equipped with:
Protective film has more on the multiple 1st hole portion between the passivating film and the 2nd electrode
A 2nd hole portion,
1st electrode is also located in each 2nd hole portion other than being located in each 1st hole portion.
3. solar cell device according to claim 1 or 2, which is characterized in that
Described 1 or more the 3rd electrode includes: multiple 3rd electrodes arranged on 2nd direction orthogonal with the 1st direction.
4. solar cell device described in any one of claim 1 to 3, which is characterized in that
Described 1 or more the 3rd electrode includes the 1st the 3rd electrode adjacent to each other and the 2nd the 3rd electrode,
The passivating film is included between the 1st the 3rd electrode and the 2nd the 3rd electrode under plane perspective closer to institute
State the smaller part of the ratio of area shared by the 1st the 3rd electrode or the 2nd the 3rd the multiple 1st hole portion of electrode.
5. solar cell device according to any one of claims 1 to 4, which is characterized in that
Each 3rd electrode has multiple island portions,
The passivating film is under plane perspective, comprising: to the 1st direction closer at least one island in the multiple island portion
The smaller part of the ratio of area shared by the multiple 1st hole portion in shape portion.
6. solar cell device according to any one of claims 1 to 5, which is characterized in that
Each 3rd electrode has the 2nd end of the 1st end and the opposite side positioned at the 1st end in the long side direction,
The passivating film is under plane perspective, in the longitudinal direction, in the position of the 1st end and the semiconductor substrate
Between the peripheral part of the 1st end side and the 2nd end and the semiconductor substrate are located at the 2nd end
Between the peripheral part of side, there is the ratio of area shared by the multiple 1st hole portion of the 3rd electrode closer to described 1 or more
Smaller part.
7. a kind of solar cell module, which is characterized in that have:
Solar cell device according to any one of claims 1 to 6；With
The jointing extended to the 1st direction is set as on described 1 or more the 3rd electrode.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-068921 | 2016-03-30 | ||
| JP2016068921 | 2016-03-30 | ||
| PCT/JP2017/012602 WO2017170529A1 (en) | 2016-03-30 | 2017-03-28 | Solar cell element and solar cell module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109041583A true CN109041583A (en) | 2018-12-18 |
| CN109041583B CN109041583B (en) | 2022-07-29 |
Family
ID=59964613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780021223.8A Active CN109041583B (en) | 2016-03-30 | 2017-03-28 | Solar cell element and solar cell module |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10651322B2 (en) |
| JP (1) | JP6613365B2 (en) |
| CN (1) | CN109041583B (en) |
| WO (1) | WO2017170529A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019167530A1 (en) * | 2018-02-27 | 2019-09-06 | 京セラ株式会社 | Solar cell element and method for producing solar cell element |
| CN114242803B (en) | 2022-02-25 | 2022-08-12 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013032716A1 (en) * | 2011-08-26 | 2013-03-07 | Ferro Corporation | Fire through aluminum paste for sinx and better bsf formation |
| US20130244371A1 (en) * | 2012-03-19 | 2013-09-19 | Renewable Energy Corporation Asa | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
| JP2014157871A (en) * | 2013-02-14 | 2014-08-28 | Hitachi Chemical Co Ltd | Composition for forming passivation film, semiconductor substrate with passivation film and manufacturing method therefor, and solar cell element and manufacturing method therefor |
| CN104362192A (en) * | 2014-10-23 | 2015-02-18 | 天威新能源控股有限公司 | Metallic surrounding back contact battery and production method and packaging method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5174903B2 (en) | 2008-06-26 | 2013-04-03 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| KR101130196B1 (en) * | 2010-11-11 | 2012-03-30 | 엘지전자 주식회사 | Solar cell |
| DE102012107026A1 (en) * | 2012-08-01 | 2014-02-06 | Solarworld Innovations Gmbh | Solar cell and method for producing a solar cell |
| JP2015050349A (en) * | 2013-09-02 | 2015-03-16 | 株式会社ノリタケカンパニーリミテド | Solar cell element and manufacturing method therefor and aluminum paste for fire-through |
-
2017
- 2017-03-28 US US16/089,330 patent/US10651322B2/en active Active
- 2017-03-28 WO PCT/JP2017/012602 patent/WO2017170529A1/en active Application Filing
- 2017-03-28 JP JP2018508063A patent/JP6613365B2/en active Active
- 2017-03-28 CN CN201780021223.8A patent/CN109041583B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013032716A1 (en) * | 2011-08-26 | 2013-03-07 | Ferro Corporation | Fire through aluminum paste for sinx and better bsf formation |
| US20130244371A1 (en) * | 2012-03-19 | 2013-09-19 | Renewable Energy Corporation Asa | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
| JP2014157871A (en) * | 2013-02-14 | 2014-08-28 | Hitachi Chemical Co Ltd | Composition for forming passivation film, semiconductor substrate with passivation film and manufacturing method therefor, and solar cell element and manufacturing method therefor |
| CN104362192A (en) * | 2014-10-23 | 2015-02-18 | 天威新能源控股有限公司 | Metallic surrounding back contact battery and production method and packaging method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US10651322B2 (en) | 2020-05-12 |
| JPWO2017170529A1 (en) | 2019-01-24 |
| JP6613365B2 (en) | 2019-11-27 |
| CN109041583B (en) | 2022-07-29 |
| WO2017170529A1 (en) | 2017-10-05 |
| US20190081186A1 (en) | 2019-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5025184B2 (en) | Solar cell element, solar cell module using the same, and manufacturing method thereof | |
| CN105247686B (en) | Solar battery cell and its manufacture method, solar module | |
| JP5153939B2 (en) | Solar cell element, split solar cell element, solar cell module and electronic device | |
| US8912431B2 (en) | Solar cell element and solar cell module | |
| EP3151286B1 (en) | Solar cell element, method for manufacturing same and solar cell module | |
| JP5241961B2 (en) | SOLAR CELL DEVICE, ITS MANUFACTURING METHOD, AND SOLAR CELL MODULE | |
| WO2016068237A1 (en) | Solar cell module | |
| CN102859712A (en) | Solar cell elements and solar cell module using same | |
| US20200176623A1 (en) | Solar cell element and solar cell module | |
| CN206040655U (en) | Many main grids solar cell and subassembly and system | |
| JP6555984B2 (en) | Solar cell element and manufacturing method thereof | |
| CN107690709B (en) | Solar cell device and its manufacturing method | |
| JP2017033970A (en) | Solar cell element and method of manufacturing the same | |
| CN108713255A (en) | Solar cell device | |
| CN109041583A (en) | Solar cell device and solar cell module | |
| JP6426486B2 (en) | Method of manufacturing solar cell element | |
| CN105702807B (en) | The preparation method of solar cell | |
| JP2015106585A (en) | Method for manufacturing solar cell element and solar cell module | |
| JP6224513B2 (en) | Method for manufacturing solar cell element | |
| JP6571409B2 (en) | Solar cell element and manufacturing method thereof | |
| WO2017057618A1 (en) | Solar cell element, method for manufacturing same and solar cell module | |
| JP2015029014A (en) | Solar cell element and solar cell module | |
| JP2015070178A (en) | Solar cell element and solar cell module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |