CN109038206A - A kind of laser wafer, chip of laser and preparation method thereof - Google Patents
A kind of laser wafer, chip of laser and preparation method thereof Download PDFInfo
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- CN109038206A CN109038206A CN201810995988.8A CN201810995988A CN109038206A CN 109038206 A CN109038206 A CN 109038206A CN 201810995988 A CN201810995988 A CN 201810995988A CN 109038206 A CN109038206 A CN 109038206A
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- laser
- metal layer
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- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
Abstract
The present invention provides a kind of laser wafer, chip of laser and preparation method thereof, which includes multiple chip of laser, and the front of laser wafer is provided with the first metal layer, and the back side of laser wafer is provided with second metal layer；Wherein, cleavage region is provided between adjoining laser chip, cleavage region is cleaned mask layer by corrosive liquid before cleavage and obtained by making mask layer with photoresist before growth the first metal layer and second metal layer to define cleavage zone map；The first metal layer and second metal layer disconnect in cleavage region, obtain chip of laser to carry out cleavage to laser wafer by cleavage region.The cleavage region of the laser wafer is not covered by metal layer, during carrying out cleavage to laser wafer, without carrying out dicing operation to metal layer, is not in that metal layer can not effectively be broken and then metal layer is caused to be easy to be pullled and dropping situations, improves the yield of product.
Description
[technical field]
The present invention relates to field of laser device technology, more particularly to a kind of laser wafer, chip of laser and its production
Method.
[background technique]
Currently, semiconductor laser is widely used in optical communication field, usual semiconductor laser has Fabry Paro to swash
Light device, distributed feedback laser, Electroabsorption Modulated Laser, tunable laser, vertical cavity surface emitting laser etc..Swash
The common manufacture craft of light device chip are as follows: etch ridge waveguide structure, somatomedin film and P-type conduction metallic film, the back side and subtract
It is as thin as cleavable thickness, the back side growth N-type metallic film, cleavage bar item, plated film, cleavage single chip.Laser wafer is general
Need at least twice cleavage process form single chip of laser: be cleaved into bar item one by one by scribing, sliver；Bar item is logical
It crosses sliver and is cleaved into single chip.
It is connected together due to the metal layer of multiple chip of laser on laser wafer, to laser wafer
When carrying out cleavage, metal layer possibly can not be effectively broken, so that metal layer is easy to be pullled and fallen off.On the other hand, by
It is larger in the attribute difference of the inorganic material of the metal material with wafer of metal layer other inorganic layers, therefore, metal layer with it is inorganic
Layer coupling condition is easy to be destroyed by external force, and when carrying out cleavage to wafer, the control of cleavage dynamics is not easily destroyed metal layer at that time
With the coupling condition of inorganic layer, and then cause metal layer be easy pullled and fallen off.Furthermore due to needing the gold to wafer simultaneously
Belong to layer and inorganic layer carries out dicing operation, be difficult to control the dynamics of cleavage, be easy to cause chip facet damage, influences laser hair
Light quality, more seriously facet damage be easy to cause in laser later period use process formed end face catastrophe and it is entirely ineffective.
In general, the smaller easier cleavage of wafer thickness, in order to guarantee during cleavage, metal layer can be effective
Fracture, wafer is thinned a kind of existing solution method, but the risk of the thinner wafer fragmentation of wafer is higher, it may appear that a large amount of
Defective products can not effectively solve foregoing problems.
In consideration of it, overcoming defect present in the prior art is the art urgent problem to be solved.
[summary of the invention]
Technical problems to be solved of the embodiment of the present invention are: due to the metal of multiple chip of laser on laser wafer
What layer was connected together, when carrying out cleavage to laser wafer, metal layer possibly can not be effectively broken, so that metal
Layer is easy to be pullled and fallen off.On the other hand, due to the metal material of metal layer and the inorganic material of other inorganic layers of wafer
Attribute difference is larger, and therefore, metal layer is easy to be destroyed by external force with inorganic layer coupling condition, when carrying out cleavage to wafer, solution
Reason dynamics controls the coupling condition for not being easily destroyed metal layer and inorganic layer at that time, and then metal layer is caused to be easy to be pullled and taken off
It falls.Furthermore due to needing to carry out dicing operation to the metal layer and inorganic layer of wafer simultaneously, it is difficult to control the dynamics of cleavage, is held
Chip facet damage is easily caused, laser luminous mass is influenced, more seriously facet damage be easy to cause the laser later period to make
It is entirely ineffective with end face catastrophe is formed in the process.
The embodiment of the present invention adopts the following technical scheme that
In a first aspect, providing a kind of laser wafer, the laser wafer 1 includes multiple chip of laser 3, described to swash
The front of light device wafer 1 is provided with the first metal layer 11, and the back side of the laser wafer 1 is provided with second metal layer 12；Its
In, cleavage region 30 is provided between adjoining laser chip 3, the cleavage region 30 is by growing the first metal layer 11
Mask layer 4 is made to define 30 pattern of cleavage region with photoresist with before the second metal layer 12, and before cleavage
The exposure mask 4 is cleaned by corrosive liquid to obtain；
The first metal layer 11 and the second metal layer 12 disconnect in the cleavage region 30, to pass through the cleavage
Region 30 carries out cleavage to the laser wafer 1 and obtains chip of laser 3.
Preferably, the first metal layer 11 is p-type ohmic contact metal layer, and the second metal layer 12 is N-type ohm
Contact metal layer.
Second aspect, provides a kind of production method of chip of laser, and the chip of laser 3 passes through to laser wafer
1 cleavage and be made, the production method of the chip of laser 3 includes:
Mask layer 4 is made respectively in the front of laser wafer 1 and the back side of laser wafer 1, wherein the exposure mask
Cleavage region 30 between layer 4 and adjoining laser chip 3 is corresponding；
It is made in the front of the laser wafer 1 and on the mask layer 4 on the front of the laser wafer 1
The first metal layer 11；
It is made at the back side of the laser wafer 1 and on the mask layer 4 on the back side of the laser wafer 1
Second metal layer 12；
Remove mask layer 4, the first metal layer 11 on mask layer 4 and the second metal layer 12 on mask layer 4
Also it removes therewith, so that the cleavage of the first metal layer 11 and the second metal layer 12 between adjoining laser chip 3
Region 30 disconnects, with the cleavage region 30 between exposed adjoining laser chip 3；
Chip of laser 3 is obtained to 1 cleavage of laser wafer by the cleavage region 30.
Preferably, described to make the packet of mask layer 4 respectively in the front of laser wafer 1 and the back side of laser wafer 1
It includes:
Photoresist is toasted in the front surface coated photoresist of the laser wafer 1, and under the first preset temperature；
Photoresist is toasted in the backside coating photoresist of the laser wafer 1, and under the second preset temperature, wherein
Second preset temperature is higher than first preset temperature；
Photoresist coated in the positive photoresist of laser wafer 1 and coated in 1 back side of laser wafer is exposed,
Corresponding mask layer 4 is produced in development respectively.
Preferably, first preset temperature is 90 DEG C~150 DEG C, and second preset temperature is 120 DEG C~160 DEG C.
Preferably, described in the front of the laser wafer 1 and covering on the front of the laser wafer 1
The first metal layer 11 is made in film layer 4 includes:
By the method evaporating or sputter in the front of the laser wafer 1 and positioned at the laser wafer 1
The first metal layer 11 is deposited on mask layer 4 on front, wherein the thickness of the first metal layer 11 is less than the mask layer 4
Thickness.
Preferably, described at the back side of the laser wafer 1 and covering on the back side of the laser wafer 1
Second metal layer 12 is made in film layer 4 includes:
By the method evaporating or sputter at the back side of the laser wafer 1 and positioned at the laser wafer 1
Depositing second metal layer 12 on mask layer 4 on the back side, wherein the thickness of the second metal layer 12 is less than the mask layer 4
Thickness.
Preferably, the mask layer 4 is to fall from power type structure, the mask layer 4 close to 1 surface of laser wafer one
The width in face is less than the width of one side of the mask layer 4 far from 1 surface of laser wafer.
Preferably, the first metal layer 11 is p-type ohmic contact metal layer, and the second metal layer 12 is N-type ohm
Contact metal layer.
The third aspect provides a kind of chip of laser, chip of laser chip of laser as described in second aspect
Production method be made.
Compared with prior art, the beneficial effect of the embodiment of the present invention is: the first gold medal of laser wafer of the invention
Belong to the cleavage region of layer and second metal layer between adjoining laser chip to disconnect, not only ensures the normal of chip of laser
Function, and independent chip of laser is made convenient for cleavage.Since cleavage region is not covered by metal layer, to laser
It is not in that metal layer can not be effectively broken in turn without carrying out dicing operation to metal layer during wafer carries out cleavage
Cause metal layer to be easy to be pullled and dropping situations, improves the yield of product.Simultaneously as without carrying out cleavage behaviour to metal layer
Make, when wafer is certain thickness, can preferably control cleavage dynamics, guarantee that the end face of chip of laser is not damaged, protect
Demonstrate,prove the performance of chip of laser.
[Detailed description of the invention]
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structure top view of laser wafer provided in an embodiment of the present invention；
Fig. 2 is a kind of structural side view of laser wafer provided in an embodiment of the present invention；
Fig. 3 is the structural side view of another laser wafer provided in an embodiment of the present invention；
Fig. 4 is a kind of flow diagram of the production method of chip of laser provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram that the laser wafer after mask layer is formed by step 40；
Fig. 6 is the structural schematic diagram that the laser wafer after metal layer is formed by step 41 and step 42；
Fig. 7 is the structural schematic diagram of the chip of laser obtained by step 44；
Fig. 8 is a kind of structural schematic diagram of chip of laser provided in an embodiment of the present invention.
[specific embodiment]
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In the description of the present invention, term "inner", "outside", " longitudinal direction ", " transverse direction ", "upper", "lower", "top", "bottom" etc. refer to
The orientation or positional relationship shown be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description the present invention rather than
It is required that the present invention must be constructed and operated in a specific orientation, therefore it is not construed as limitation of the present invention.
In addition, as long as technical characteristic involved in the various embodiments of the present invention described below is each other not
Constituting conflict can be combined with each other.
In practical application scene, wafer refers to silicon wafer used in silicon semiconductor production of integrated circuits, due to its shape
For circle, therefore referred to as wafer；It can be processed on silicon and is fabricated to various circuit component structures, and becoming has specific electrical functionality
IC product (for example, chip of laser, detector chip, driver chip etc.).
It include multiple laser bar items 2 (bar item) in field of lasers, each laser wafer 1 such as Fig. 1, it is each to swash
Multiple chip of laser 3 of regular array are distributed on light device bar item 2.Specifically, when making single chip of laser 3,
It needs to be cleaved into laser bar item 2 one by one to 1 scribing of laser wafer, sliver first, then logical to each laser bar item 2
It crosses sliver and is cleaved into single chip of laser 3.
Currently, general first make laser wafer 1, then chip of laser is obtained by carrying out cleavage to laser wafer 1
3.In the front of laser wafer 1 and the back side growth metallic film of laser wafer 1 to form corresponding metal layer, for connecing
Receive external electric signal.Wherein, the corresponding metal layer of multiple chip of laser 3 is connected together, as shown in Fig. 2, in laser
The front growth the first metal layer 11 of device wafer 1, grows second metal layer 12, the first metal layer at the back side of laser wafer 1
11 and second metal layer 12 be continuous, i.e. adjoining laser chip 3 corresponding first along the direction that laser bar item 2 extends
What metal layer 11 and second metal layer 12 were connected together.By obtaining single laser core to 1 cleavage of laser wafer
When piece 3, need to disconnect the first metal layer 11 and second metal layer 12 to separate adjoining laser chip 3, to obtain list
Chip of laser 3.
Inventors have found that one side metal layer possibly can not be effectively broken when carrying out cleavage to laser wafer 1, into
And metal layer is made to be easy to be pullled and fallen off by external force.On the other hand, due to the metal material of metal layer and wafer, other are inorganic
The attribute difference of the inorganic material of layer is larger, and therefore, metal layer is easy to be destroyed by external force with inorganic layer coupling condition, to wafer
When carrying out cleavage, cleavage dynamics controls the coupling condition for not being easily destroyed metal layer and inorganic layer at that time, and then leads to metal layer
It is easy to be pullled and fallen off.Furthermore it due to needing to carry out dicing operation to the metal layer and inorganic layer of wafer simultaneously, is difficult to control
The dynamics of cleavage be easy to cause chip facet damage, influences laser luminous mass, more seriously facet damage is be easy to cause
In laser later period use process formed end face catastrophe and it is entirely ineffective.
To solve the above-mentioned problems, a kind of improved laser crystal circle structure is inventor provided, it is provided by the invention
Cleavage region of the first metal layer and second metal layer of laser wafer between adjoining laser chip disconnects, to laser
Device wafer carry out cleavage during, without to metal layer carry out dicing operation, be not in metal layer can not effectively be broken into
And metal layer is caused to be easy to be pullled and the generation of dropping situations, improve the yield of product.Simultaneously as without to metal layer into
Row dicing operation can preferably control cleavage dynamics when wafer is certain thickness, guarantee the end face of chip of laser not by
Damage, guarantees the performance of chip of laser.Structure about laser wafer asks embodiment 1 as detailed below.
Embodiment 1:
In conjunction with Fig. 1 Fig. 3 and Fig. 5, in the present embodiment, laser wafer 1 includes multiple lasers being arranged in array
Chip 3, the front of the laser wafer 1 are provided with the first metal layer 11, and the back side of the laser wafer 1 is provided with second
Metal layer 12；Wherein, it is provided with cleavage region 30 between adjoining laser chip 3, the cleavage region 30 is as described in the growth
With photoresist production mask layer 4 to define 30 figure of cleavage region before the first metal layer 11 and the second metal layer 12
Case, and the exposure mask 4 is cleaned by corrosive liquid before cleavage and is obtained, the first metal layer 11 and the second metal layer 12 exist
The cleavage region 30 disconnects, and obtains laser core to carry out cleavage to the laser wafer 1 by the cleavage region 30
Piece 3.
In an alternate embodiment of the invention, the front of the laser wafer 1 is provided with 31 structure of ridge waveguide, first metal
Layer 11 is p-type ohmic contact metal layer, and the second metal layer 12 is N-type ohmic contact metal layer.
Herein, it should be noted that the back side of the so-called laser wafer 1 of the present embodiment and the front of laser wafer 1
It is opposite concept, i.e., two opposite surfaces on wafer.If any one surface quilt in two opposite surfaces
It is defined as wafer frontside, then another opposite surface is backside of wafer.In the present embodiment, definition has 31 structure of ridge waveguide
It is on one side the front of laser wafer 1, opposite another side is the back side of laser wafer 1.
Since the cleavage region 30 of the laser wafer 1 of the present embodiment is not covered by metal layer, to laser wafer 1
It is not in that metal layer can not effectively be broken and then cause without carrying out dicing operation to metal layer during carrying out cleavage
Metal layer is easy to be pullled and the generation of dropping situations, improves the yield of product.
Embodiment 2:
The production method for present embodiments providing a kind of chip of laser, as made from the production method of chip of laser
Chip of laser equally can be solved the problems, such as effectively aforementioned cited.Below with reference to Fig. 1, Fig. 3 and Fig. 4~Fig. 7, in detail
Illustrate the specific steps of the production method of the chip of laser of the present embodiment:
Step 40: making mask layer 4 respectively in the front of laser wafer 1 and the back side of laser wafer 1, wherein
Cleavage region 30 between the mask layer 4 and adjoining laser chip 3 is corresponding.
In the present embodiment, it in the front surface coated photoresist of the laser wafer 1, and is toasted under the first preset temperature
Photoresist then in the backside coating photoresist of the laser wafer 1, and toasts photoresist under the second preset temperature,
In, second preset temperature is higher than first preset temperature.
The temperature of baking need to be controlled in the present embodiment in order to avoid photoetching adhesive curing influences subsequent developing procedure
With the time of baking, due to after the process that the photoresist to backside of wafer is toasted, the photoresist of wafer frontside is also simultaneously
It is baked, therefore, the second preset temperature is higher than the first preset temperature, in order to avoid the photoetching adhesive curing of wafer frontside.Preferred
In embodiment, the first preset temperature be 90 DEG C~150 DEG C, baking time be 1~2 minute, the second preset temperature be 120 DEG C~
160 DEG C, baking time is 1~2 minute.
It in another embodiment, can also be first in the backside coating photoresist of laser wafer 1, then in laser wafer
The sequence of 1 front surface coated photoresist, i.e. coating photoresist is not specifically limited, and guarantees that the one side for first coating photoresist is corresponding
Baking temperature coats the corresponding baking temperature of one side of photoresist after being higher than.
Then, the photoresist to the positive photoresist of laser wafer 1 is coated in and coated in 1 back side of laser wafer
Corresponding mask layer 4 is produced in exposure, development respectively.Specifically, can be by double face photoetching machine, by laser wafer 1
Front and the back side of laser wafer 1 while alignment mask version, define 30 pattern of cleavage region by mask plate, to form exposure mask
Layer 4.For example, photoresist is positive photoetching rubber, the cleavage region 30 between the light tight region and adjoining laser chip 3 of mask plate
It is corresponding, it (is corresponded on cleavage region 30 so that the photoresist being located on cleavage region 30 is blocked by the light tight region of mask plate
Photoresist not by exposure, no change has taken place for property), and be located at other regions photoresist after exposure photoresist property send out
Changing dissolves in developer solution.By the submergence of laser wafer 1 10~30 seconds in developer solution after exposure, it is ensured that photoresist
It is exposed region and is dissolved in developer solution and expose crystal column surface, and developer solution is not dissolved in by the photoresist of exposure, be still attached to
Crystal column surface forms corresponding mask layer 4, then cleavage region 30 is covered by mask layer 4.
In an alternate embodiment of the invention, the front and position that production is located at laser wafer 1 can be adjusted according to actual scene
In the production order of the mask layer 4 at the back side of laser wafer 1.For example, the positive mask layer 4 of laser wafer 1 is first made,
Then the first metal layer 11 is made；The mask layer 4 at the back side of laser wafer 1 is made again, then makes second metal layer 12.?
In other embodiments, photoresist may be negative photoresist, when photoresist is negative photoresist, transmission region and the phase of mask plate
Cleavage region 30 between adjacent chip of laser 3 is corresponding to form corresponding mask layer 4.
In a preferred embodiment, for the ease of depositing the metal layer of larger area on the wafer surface, to guarantee laser
The electric conductivity of device chip 3, mask layer 4 are type structure of falling from power.Specifically, the section of mask layer 4 is trapezoidal, mask layer 4 is leaned on
The width of the one side on nearly 1 surface of the laser wafer back side of laser wafer 1 (front of laser wafer 1) is less than described cover
The width of one side of the film layer 4 far from 1 surface of laser wafer.It can not only guarantee to be covered with mask layer on cleavage region 30
4, while enough regions have been reserved for the metal layer of subsequent deposition.
It include herein three lasers with each laser bar item 2 to intuitively show position and the structure of mask layer 4
It is illustrated for chip 3, as shown in figure 5, the cleavage region 30 of adjoining laser chip 3 is corresponding to be located at adjoining laser chip
3 interface intersection, the corresponding front and back for being distributed in laser wafer 1 in cleavage region 30 are corresponding in cleavage region 30
The mask layer 4 formed by step 40 is covered on position.
Step 41: the front in the laser wafer 1 and the mask layer on the front of the laser wafer 1
The first metal layer 11 is made on 4.
In the present embodiment, in the front of the laser wafer 1 and it is located at described by the method evaporating or sputter
The first metal layer 11 is deposited on mask layer 4 on the front of laser wafer 1.In order to guarantee to be deposited on laser wafer 1 just
The first metal layer 11 on face is not connected to the first metal layer 11 being deposited on mask layer 4, in the present embodiment, need to guarantee institute
The thickness for stating the first metal layer 11 is less than the thickness of the mask layer 4.
Step 42: the back side in the laser wafer 1 and the mask layer on the back side of the laser wafer 1
Second metal layer 12 is made on 4.
In the present embodiment, at the back side of the laser wafer 1 and it is located at described by the method evaporating or sputter
Depositing second metal layer 12 on mask layer 4 on the back side of laser wafer 1.In order to guarantee to be deposited on the back of laser wafer 1
Second metal layer 12 on face is not connected to the second metal layer 12 being deposited on mask layer 4, wherein the second metal layer 12
Thickness be less than the mask layer 4 thickness.
In actual application scenarios, the front of the laser wafer 1 is provided with ridge waveguide 31, the first metal layer
11 be p-type ohmic contact metal layer, and the second metal layer 12 is N-type ohmic contact metal layer.Specifically, aobvious by exposure
Shadow forms ridge waveguide 31, and the somatomedin layer film on ridge waveguide 31, is then forming mask layer 4 according to step 40.
As shown in fig. 6, the first metal layer 11 and second metal layer 12 that are formed by step 41 and step 42 correspond to position
In on crystal column surface and mask layer 4.
Step 43: removal mask layer 4, the first metal layer 11 on mask layer 4 and the second gold medal on mask layer 4
Belong to layer 12 also to remove therewith, so that the first metal layer 11 and the second metal layer 12 are between adjoining laser chip 3
Cleavage region 30 disconnect, with the cleavage region 30 between exposed adjoining laser chip 3.
In the present embodiment, the wafer after deposited metal layer is immersed in a period of time in glue, can heated when necessary
Glue is removed, is dissolved in the photoresist to form mask layer 4 in glue, to remove mask layer 4.At the same time, it is located at mask layer 4
On the first metal layer 11 and the second metal layer 12 on mask layer 4 also remove therewith, with exposed adjoining laser chip 3
Between cleavage region 30 realize cleavage region 30 on metal layer removing, formed gully shape figure, will be described to reach
The purpose that the cleavage region 30 of the first metal layer 11 and the second metal layer 12 between adjoining laser chip 3 disconnects.
Crystal circle structure by formation after step 43 is as shown in figure 3, the cleavage region 30 of adjoining laser chip 3 is exposed
Out, so that corresponding the first metal layer 11 and second metal layer 12 disconnect.
Step 44: chip of laser 3 is obtained to 1 cleavage of laser wafer by the cleavage region 30.
In the present embodiment, it since the cleavage region 30 between adjoining laser chip 3 is not covered with metal layer, can adopt
Chip of laser 3 is obtained to 1 cleavage of laser wafer by the cleavage region 30 with physical method.In the present embodiment
In, since the metal layer in cleavage region 30 has been removed at step 43, metal layer cleavage can not disconnect completely when avoiding cleavage
Caused metal layer pulls obscission.Meanwhile in Cleaving Process, the stress condition according to other inorganic layers of wafer controls solution
Reason dynamics guarantees that the end face of chip of laser 3 is not damaged, guarantees the performance of chip of laser 3.As shown in fig. 7, by cleavage
Single chip of laser 3 is obtained later.
In practical application scene, as shown in figure 8, chip of laser 3 further includes substrate 301, buffer layer 302, lower limitation
Layer 303, multiple quantum well layer 304, etch stop layer 305, are etched with 31 structure of ridge waveguide on the etch stop layer 305.
Wherein, 31 structure of ridge waveguide is by photoresist mask pattern, wet etching, and accurate control corrosion rate depth is to close to multiple quantum well layer
304.The accurate control corrosion rate depth, dependent on the corrosion rate difference of etch stop layer 305 and other materials, etching-stop
Layer resistance to corrosion is stronger, and corrosion depth is more easy to control.Wherein, the embodiment of the present invention is also with regard to ginseng feasible in art technology
Number configuration, just the optional parameter amount of each layer of structure combs, specific: typical laser structure is outer in N-type substrate 301
Prolong buffer layer 302, thickness 500-1000nm；Lower limit layer 303, thickness 100-200nm；Multiple quantum wells 304, thickness 30-
120nm；Etch stop layer 305, thickness 10-50nm.
It is different from the prior art, the first metal layer and second metal layer of laser wafer of the invention are in adjoining laser
Cleavage region between chip disconnects, and has not only ensured the normal function of chip of laser, but also independent convenient for cleavage production
Chip of laser.Since cleavage region is not covered by metal layer, to laser wafer carry out cleavage during, without pair
Metal layer carries out dicing operation, is not in that metal layer can not effectively be broken and then metal layer is caused to be easy to be pullled and the feelings that fall off
Condition improves the yield of product.Simultaneously as without carrying out dicing operation to metal layer, it, can be compared with when wafer is certain thickness
Good control cleavage dynamics, guarantees that the end face of chip of laser is not damaged, guarantees the performance of chip of laser.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of laser wafer, which is characterized in that the laser wafer (1) includes multiple chip of laser (3), described to swash
The front of light device wafer (1) is provided with the first metal layer (11), and the back side of the laser wafer (1) is provided with second metal layer
(12)；Wherein, it is provided with cleavage region (30) between adjoining laser chip (3), the cleavage region (30) is by growth institute
Mask layer (4) are made to define the cleavage area with photoresist before stating the first metal layer (11) and the second metal layer (12)
Domain (30) pattern, and the mask layer (4) is cleaned by corrosive liquid before cleavage and is obtained；
The first metal layer (11) and the second metal layer (12) are disconnected in the cleavage region (30), to pass through the solution
Reason region (30) carries out cleavage to the laser wafer (1) and obtains chip of laser (3).
2. laser wafer (1) according to claim 1, which is characterized in that the first metal layer (11) is p-type ohm
Contact metal layer, the second metal layer (12) are N-type ohmic contact metal layer.
3. a kind of production method of chip of laser, which is characterized in that the chip of laser (3) passes through to laser wafer
(1) cleavage and be made, the production method of the chip of laser (3) includes:
Mask layer (4) are made respectively in the front of laser wafer (1) and the back side of laser wafer (1), wherein described to cover
Cleavage region (30) between film layer (4) and adjoining laser chip (3) are corresponding；
It is made on mask layer (4) on front in the laser wafer (1) and the front positioned at the laser wafer (1)
Make the first metal layer (11)；
It is made on mask layer (4) on the back side in the laser wafer (1) and the back side positioned at the laser wafer (1)
Make second metal layer (12)；
It removes mask layer (4), the second metal for being located at the first metal layer (11) on mask layer (4) and being located on mask layer (4)
Layer (12) also removes therewith, so that the first metal layer (11) and the second metal layer (12) are in adjoining laser chip
(3) the cleavage region (30) between disconnects, with the cleavage region (30) between exposed adjoining laser chip (3)；
Chip of laser (3) are obtained to laser wafer (1) cleavage by the cleavage region (30).
4. the production method of chip of laser according to claim 3, which is characterized in that described in laser wafer (1)
Front and the back side of laser wafer (1) make mask layer (4) respectively and include:
In the front surface coated photoresist of the laser wafer (1), and photoresist is toasted under the first preset temperature；
In the backside coating photoresist of the laser wafer (1), and photoresist is toasted under the second preset temperature, wherein institute
The second preset temperature is stated higher than first preset temperature；
Photoresist coated in laser wafer (1) positive photoresist and coated in laser wafer (1) back side is exposed,
Corresponding mask layer (4) are produced in development respectively.
5. the production method of chip of laser according to claim 4, which is characterized in that first preset temperature is 90
DEG C~150 DEG C, second preset temperature is 120 DEG C~160 DEG C.
6. the production method of chip of laser according to claim 3, which is characterized in that described in the laser wafer
(1) front and production the first metal layer (11) packet on the mask layer (4) on the front of the laser wafer (1)
It includes:
In the front of the laser wafer (1) and it is located at the laser wafer (1) by the method evaporating or sputter
The first metal layer (11) are deposited on mask layer (4) on front, wherein the thickness of the first metal layer (11) is less than described cover
The thickness of film layer (4).
7. the production method of chip of laser according to claim 3, which is characterized in that described in the laser wafer
(1) the back side and production second metal layer (12) packet on the mask layer (4) on the back side of the laser wafer (1)
It includes:
At the back side of the laser wafer (1) and it is located at the laser wafer (1) by the method evaporating or sputter
Depositing second metal layer (12) on mask layer (4) on the back side, wherein the thickness of the second metal layer (12) is less than described cover
The thickness of film layer (4).
8. according to the production method of the described in any item chip of laser of claim 3~7, which is characterized in that the mask layer
It (4) is type structure of falling from power, the mask layer (4) is less than described cover close to the width of the one side on laser wafer (1) surface
The width of one side of the film layer (4) far from laser wafer (1) surface.
9. according to the production method of the described in any item chip of laser of claim 3~7, which is characterized in that first gold medal
Belonging to layer (11) is p-type ohmic contact metal layer, and the second metal layer (12) is N-type ohmic contact metal layer.
10. a kind of chip of laser, which is characterized in that the chip of laser is swashed by such as claim 3~9 is described in any item
The production method of light device chip is made.
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| CN112993742A (en) * | 2019-12-13 | 2021-06-18 | 山东华光光电子股份有限公司 | Semiconductor laser chip and manufacturing method thereof |
| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
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