CN109031830A - 一种阵列基板及其制备方法、液晶显示面板 - Google Patents
一种阵列基板及其制备方法、液晶显示面板 Download PDFInfo
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Abstract
本发明提供一种阵列基板及其制备方法、液晶显示面板,属于显示技术领域,其可解决现有的液晶显示装置外置的独立的背光源容易造成漏光、致使产品的厚度较大的问题。本发明的阵列基板上同时设置了发光结构和阵列结构,其中,发光结构的控制部件可以控制发光源发光。即本发明中直接在阵列基板上形成发光结构,相当于将发光源内置,这样不再需要与外置背光源粘合,不会产生粘合缝隙造成漏光,还可降低产品厚度。
Description
技术领域
本发明属于显示技术领域,具体涉及一种阵列基板及其制备方法、液晶显示面板。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display,简称TFT-LCD)具有体积小、功耗低、无辐射等特点,近些年得到飞速发展,从屏幕尺寸到显示质量都取得了很大进步。
目前,液晶显示面板由于其自身不能发光,需在其背面加一个独立的背光源来配合完成显示,也就是说,现有的液晶显示面板均需要外置的背光源。其中,直下式背光源通常包括:导光板和位于该导光板入光面的多个矩阵状排布的发光二极管(Light-EmittingDiode;简称:LED);为了使直下式背光源发出的光线均匀,通常在设置LED时,使LED的发光侧与导光板之间存在一定的距离,以保证相邻的LED发出的光线可以混光,使得其最终出光均匀。侧入式背光源通常包括:导光板和位于该导光板一侧的LED灯条;具体的,LED灯条发射的光线从导光板的入光面射入,在导光板内进行全反射,设置在导光板出光面的网点破坏光线在导光板内部的全反射,使光线从导光板的出光面均匀射出,实现由点光源转化成面光源。
发明人发现现有技术中至少存在如下问题:外置的背光源与显示面板之间粘合不牢容易造成漏光,此外,不论是直下式背光源还是侧入式背光源,其均需要一定的厚度以增加背光源出光均匀性,这样限制了超薄显示产品的发展。
发明内容
本发明针对现有的液晶显示装置外置的独立的背光源容易造成漏光、致使产品的厚度较大的问题,提供一种阵列基板及其制备方法、液晶显示面板。
解决本发明技术问题所采用的技术方案是:
一种阵列基板,其是用于液晶显示面板的阵列基板,所述阵列基板包括衬底,以及设于所述衬底上的发光结构和阵列结构,所述阵列结构包括排成阵列的像素电极以及像素电极的驱动电路;其中,所述发光结构包括发光源和用于控制发光源发光的控制部件。
可选的是,所述发光源包括多个矩阵排列的荧光发光单元,所述控制部件包括与每个荧光发光单元对应设置的控制器。
可选的是,所述阵列结构包括多个矩阵排列的像素单元,所述荧光发光单元与像素单元一一对应设置。
可选的是,相邻的荧光发光单元之间填充有遮光材料。
可选的是,所述发光结构还包括反射涂层,所述反射涂层设于衬底与发光源之间。
可选的是,所述控制部件设于发光源靠近衬底的一侧。
可选的是,所述发光结构还包括平坦化层,所述平坦化层设于控制部件与发光源之间。
可选的是,所述发光结构还包括光扩散层,所述光扩散层设于发光源背离衬底的一侧。
可选的是,所述发光结构和阵列结构之间设有保护层。
可选的是,所述衬底为玻璃衬底。
可选的是,所述发光源包括荧光发光层。
可选的是,所述荧光发光层通过荧光胶涂覆形成。
本发明还提供一种阵列基板的制备方法,包括在衬底上形成发光结构的步骤,以及形成阵列结构的步骤,其中,所述形成发光结构包括形成发光源和用于控制发光源发光的控制部件的步骤;所述形成阵列结构包括形成阵列排布的像素电极以及像素电极的驱动电路的步骤。
本发明还提供一种液晶显示面板,包括上述的阵列基板。
附图说明
图1为本发明的实施例1的阵列基板的结构示意图;
图2为本发明的实施例2的阵列基板一种截面结构示意图;
图3为本发明的实施例2的阵列基板另一种截面结构示意图;
图4为本发明的实施例2的阵列基板的俯视示意图;
其中,附图标记为:1、衬底;2、发光结构;20、荧光发光单元;21、发光源;22、控制部件;23、反射涂层;24、平坦化层;25、光扩散层;26、遮光材料;3、阵列结构;4、保护层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1:
本实施例提供一种阵列基板,其是用于液晶显示面板的阵列基板,如图1所示,该阵列基板包括衬底1,以及设于所述衬底1上的发光结构2和阵列结构3,所述阵列结构3包括排成阵列的像素电极以及像素电极的驱动电路;其中,所述发光结构2包括发光源21和用于控制发光源21发光的控制部件22。
本实施例的阵列基板上同时设置了发光结构2和阵列结构3,其中,发光结构2的控制部件22可以控制发光源21发光。即本实施例中直接在阵列基板上形成发光结构2,相当于将发光源21内置,这样不再需要与外置背光源粘合,不会产生粘合缝隙造成漏光,还可降低产品厚度。
实施例2:
本实施例提供一种阵列基板,其是用于液晶显示面板的阵列基板,如图2、图3所示,所述阵列基板包括衬底1,以及设于所述衬底1上的发光结构2和阵列结构3,所述阵列结构3包括排成阵列的像素电极以及像素电极的驱动电路;其中,所述发光结构2包括发光源21和用于控制发光源21发光的控制部件22,发光源21为荧光发光层。
本实施例中内置的发光源21采用层状的荧光发光,这样相当于该光源为一个面光源,该面光源无需混光,故不会增加产品厚度。在此不限定荧光发光层的具体的厚度(该厚度是指在垂直于衬底1方向上的尺寸),可以根据实际需要进行选择或调整,例如,可以设计100nm-90μm厚的荧光发光层。
其中,本实施例的发光结构2和阵列结构3可以共用同一个电源,具体的,控制部件22的柔性电路板可以与阵列结构3的柔性电路板绑定到一起,由同一个电源向控制部件22和阵列结构3提供电压。
作为本实施例中的一种可选实施方案,所述荧光发光层通过荧光胶涂覆形成。
也就是说,荧光发光层通常可采用荧光粉和封装胶混合后形成荧光胶,然后将荧光胶进行涂覆形成一层膜状结构。具体的,“荧光”也称“萤光”,“荧光粉”俗称“夜光粉”。更具体的,可以选用卤磷酸钙荧光粉、稀土三基色荧光粉。
本实施例中不对衬底1的具体材质进行限制,可以选用树脂衬底1,也可以选用柔性材料的衬底1。
在一个实施例中,所述衬底1为玻璃衬底。
其中,选用玻璃衬底的主要作用是为其它层提供一个镀膜的基底层,本实施例的产品不再需要传统背光的导光板,玻璃相较于现有的导光板的PC材料,具有透过率高,硬度大,不易划伤产生不良等优点。此外,本实施例的发光源21的设计相当于是内置的直上式光源,不会造成光线损失,这种设计更有利于提升光源的光效,属于一种高亮度背光。
作为本实施例中的一种可选实施方案,所述发光源21包括多个矩阵排列的荧光发光单元20,所述控制部件22包括与每个荧光发光单元20对应设置的控制器。
也就是说,荧光发光层可以是涂覆形成的整层的结构,也可以是如图4所示的具有图案化的图层作为多个荧光发光单元20,在此将荧光发光层图案化的好处是可以对各个荧光发光单元20分别进行控制,相当于对荧光发光层分区域进行控制。可以理解的是,荧光发光单元20可以如图4为6*9的荧光发光单元20,还可根据实际工艺以及需要来拆分成不同尺寸的小的单元。
其中,控制器可以是芯片,实际应用中可以形成多个芯片对每个荧光发光单元20进行控制。更具体的,芯片可以选用蓝宝石基底的芯片。该实施例中芯片与荧光发光层相当于形成一个微型的发光二极管,芯片也即半导体的晶片,半导体晶片由两部分组成,一部分是P型半导体,在它里面空穴占主导地位,另一端是N型半导体,在这边主要是电子。当这两种半导体连接起来的时候,它们之间就形成一个P-N结。当电流通过导线作用于这个晶片的时候,电子就会被推向P区,在P区里电子跟空穴复合,然后就会以光子的形式发出能量。而光的波长也就是光的颜色。
本实施例中不限定控制器的具体设计方式,可以将多个芯片设于同一层中。在一个实施例中,所述控制器设于荧光发光层靠近衬底1的一侧。这样控制器不影响出光面的出光。
在一个实施例中,所述阵列结构3包括多个矩阵排列的像素单元,所述荧光发光单元20与像素单元一一对应设置。
也就是说,每个荧光发光单元20可以对应一个阵列结构3的R、G、B的子像素,相当于每个R、G、B子像素都有其单独的背光的荧光发光单元20为其提供背光,这样可以实现单独控制其亮度、色度。
在一个实施例中,相邻的荧光发光单元20之间填充有遮光材料26。
其中,遮光材料26可以是与荧光发光单元20同层设置,遮光材料26的作用是:避免一个荧光发光单元20对与其邻近的荧光发光单元20的亮度、色度的产生影响。
在一个实施例中,所述发光结构2还包括反射涂层23,所述反射涂层23设于衬底1与荧光发光层之间。
其中,反射涂层23的主要作用是将发光源21射向衬底1一侧的光反射回去,相当于增大发光源21背离衬底1一侧的出光,即反射涂层23可以起到反射片的作用,反射涂层23可以是直接形成于玻璃衬底1上的金属层,例如其可以是Ag的涂层。此外,将Ag直接镀膜形成于玻璃衬底1上的好处是减少传统反射片因组装偏位、膜材褶皱等问题造成的不良。
在一个实施例中,所述发光结构2还包括平坦化层24,所述平坦化层24设于荧光发光层与控制器之间。
其中,平坦化层24可以选用透过率高的,例如氧化硅、氮化硅等材料构成。需要说明的是,平坦化层24并不是必须的,当其下方的控制器,例如芯片所在层造成的断差较大的情况下可以设置该平坦化层24,当芯片所在层造成的断差较小的情况下可以不必设计该平坦化层24。
在一个实施例中,所述发光结构2还包括光扩散层25,所述光扩散层25设于荧光发光层背离衬底1的一侧。
光扩散层25可以是亚克力、聚苯乙烯、聚碳酸酯等材料形成的膜层,光扩散层25具有耐热性、尺寸稳定性,及耐久性,其可以使光线扩散效果达到最佳状态。
在一个实施例中,所述发光结构2和阵列结构3之间设有保护层4。
也就是说,在形成发光结构2后为了避免后续在制备阵列结构3的过程中,对已经形成的发光结构2造成损坏,在此增加一层保护层4。
在本实施例对应的附图中,显示了各结构层的大小、厚度等仅为示意。在工艺实现中,各结构层在衬底1上的投影面积可以相同,也可以不同,可以通过不同工艺实现所需的各结构层投影面积;同时,附图所示结构也不限定各结构层的几何形状,例如可以是附图所示的矩形,还可以是梯形,或其它刻蚀所形成的形状。
实施例3:
本实施例提供一种阵列基板的制备方法,包括以下制备步骤:
S01、在衬底上形成发光结构;其中,衬底可以选用玻璃衬底,具体的,S01主要包括:
可选的,S01a、形成反射涂层;具体的,可以采用溅射工艺在玻璃衬底上形成金属Ag的涂层,采用溅射工艺直接镀膜的好处是可以减少现有的外置式背光源的反射片因组装偏位、膜材褶皱等问题造成的不良的发生。
S01b、形成用于控制发光源发光的控制部件;具体的,可以利用黄光工艺形成蓝宝石基材的芯片的结构。
可选的,S01c、形成平坦化层;具体的,可以选用透过率高的,例如氧化硅、氮化硅等,用等离子体增强化学的气相沉积(PECVD)工艺形成氧化硅、氮化硅的膜层。
S01d、形成发光源;具体的,可以将封装胶与荧光粉混合得到荧光胶,通过注胶工艺将荧光胶注入以形成发光源,封装胶可以选用硅橡胶,硅橡胶具有无色透明、无低分子副产物、应力小、可深层硫化、无腐蚀、交联结构易控制、硫化产品收缩率小等优点;其胶体既可在常温下硫化,又可通过加热硫化;固化后胶体具有耐冷热冲击、耐高温老化和耐紫外线辐射等优异的性能。当然,还可以将固体的荧光粉溶于液体中涂覆形成荧光发光层,其中,荧光发光层可以图案化形成多个荧光发光单元。
则可选的,S01e、还可采用遮光材料在相邻的荧光发光单元之间形成遮光层。且形成遮光层与荧光发光单元的先后顺序可以调整。
S01f、形成光扩散层;具体的,可以将扩散粒子溶于树脂,采用PECVD工艺进行镀膜以形成光扩散层。
S01g、形成保护层;具体的,可以选用不导电且透过率好的非金属材料,例如氧化硅或者氮化硅等,采用PECVD方式形成保护层。
S02a、形成阵列排布的像素电极;具体的,像素电极可以采用氧化铟镓锌、氧化铟、氧化锌、氧化铟锌、氧化铟锡、氧化铟镓锡或氧化铟锡锌中的至少一种材料形成。
S02b、形成像素电极的驱动电路;具体的,其包括形成薄膜晶体管TFT的栅极、源极、漏极以及设置于源极、漏极与栅极之间的栅绝缘层等。
可选的,S03、将控制部件和像素电极的驱动电路与电源线绑定连接。
实施例4:
本实施例提供了一种液晶显示面板,其包括上述任意一种阵列基板。所述显示装置可以为:电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (13)
1.一种阵列基板,其是用于液晶显示面板的阵列基板,其特征在于,所述阵列基板包括衬底,以及设于所述衬底上的发光结构和阵列结构,所述阵列结构包括排成阵列的像素电极以及像素电极的驱动电路;其中,所述发光结构包括发光源和用于控制发光源发光的控制部件。
2.根据权利要求1所述的阵列基板,其特征在于,所述发光源包括多个矩阵排列的荧光发光单元,所述控制部件包括与每个荧光发光单元对应设置的控制器。
3.根据权利要求2所述的阵列基板,其特征在于,所述阵列结构包括多个矩阵排列的像素单元,所述荧光发光单元与像素单元一一对应设置。
4.根据权利要求2所述的阵列基板,其特征在于,相邻的荧光发光单元之间填充有遮光材料。
5.根据权利要求1所述的阵列基板,其特征在于,所述发光结构还包括反射涂层,所述反射涂层设于衬底与发光源之间。
6.根据权利要求1所述的阵列基板,其特征在于,所述控制部件设于发光源靠近衬底的一侧。
7.根据权利要求1所述的阵列基板,其特征在于,所述发光结构还包括平坦化层,所述平坦化层设于控制部件与发光源之间。
8.根据权利要求1所述的阵列基板,其特征在于,所述发光结构还包括光扩散层,所述光扩散层设于发光源背离衬底的一侧。
9.权利要求1所述的阵列基板,其特征在于,所述发光结构和阵列结构之间设有保护层。
10.根据权利要求1所述的阵列基板,其特征在于,所述衬底为玻璃衬底。
11.根据权利要求1所述的阵列基板,其特征在于,所述发光源包括荧光发光层;所述荧光发光层通过荧光胶涂覆形成。
12.一种阵列基板的制备方法,其特征在于,包括在衬底上形成发光结构的步骤,以及形成阵列结构的步骤,其中,所述形成发光结构包括形成发光源和用于控制发光源发光的控制部件的步骤;所述形成阵列结构包括形成阵列排布的像素电极以及像素电极的驱动电路的步骤。
13.一种液晶显示面板,其特征在于,包括权利要求1-11任一项所述的阵列基板。
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CN106842731A (zh) * | 2017-04-17 | 2017-06-13 | 京东方科技集团股份有限公司 | 一种显示面板 |
CN106848026A (zh) * | 2017-02-14 | 2017-06-13 | 京东方科技集团股份有限公司 | 微led器件及显示装置 |
CN206557511U (zh) * | 2017-03-23 | 2017-10-13 | 北京京东方显示技术有限公司 | 一种显示基板、显示面板及显示装置 |
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