CN109023375A - Etch fluid circulation and Etaching device - Google Patents
Etch fluid circulation and Etaching device Download PDFInfo
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- CN109023375A CN109023375A CN201811005589.9A CN201811005589A CN109023375A CN 109023375 A CN109023375 A CN 109023375A CN 201811005589 A CN201811005589 A CN 201811005589A CN 109023375 A CN109023375 A CN 109023375A
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- concentration
- copper ion
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- etching solution
- liquid bath
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
The present invention provides a kind of etching fluid circulation, including reservoir, the dashpot being connected to reservoir, the filter being connected to dashpot, the adsorption tank being connected to filter, the new liquid bath of first be connected to adsorption tank and the supply tank being connected to the first new liquid bath, supply tank are connected to reservoir；Etching solution in reservoir is greater than the first default copper ion concentration in copper ion concentration, and when less than the second default copper ion concentration, enter the first new liquid bath after removing copper ion by dashpot buffering, filter filtering and adsorption tank absorption, pH is adjusted in the first new liquid bath and enters supply tank after adjusting concentration of hydrogen peroxide, enters reservoir after the concentration of hydrogen peroxide of the etching solution in supply tank reaches default concentration of hydrogen peroxide after concentration of hydrogen peroxide is adjusted in supply tank.The technical issues of present invention is solved because hydrogen peroxide is constantly consumed, the reduced service life of etching solution.
Description
Technical field
The present invention relates to etching technique field, in particular to a kind of etching fluid circulation and Etaching device.
Background technique
The hydrogen peroxide system copper acid etching liquid that thin film transistor-liquid crystal display (TFT-LCD) copper wiring uses is etching
In the process, with the continuous progress that hydrogen peroxide and copper react, reaction product copper ion gradually increases, because copper ion can promote
The decomposition of hydrogen oxide, so that hydrogen peroxide is constantly consumed, the reduced service life of etching solution leads to the cost of copper acid etching liquid
It is high.
Summary of the invention
The purpose of the present invention is to provide a kind of etching fluid circulation and Etaching devices, to solve because hydrogen peroxide is continuous
It is consumed, the technical issues of the reduced service life of etching solution.
The present invention provides a kind of etching fluid circulation, including reservoir, the dashpot being connected to the reservoir, with institute
State dashpot connection filter, the adsorption tank being connected to the filter, the first new liquid bath being connected to the adsorption tank with
And the supply tank being connected to the described first new liquid bath, the supply tank are connected to the reservoir；Etching in the reservoir
Liquid is greater than the first default copper ion concentration in copper ion concentration, and when less than the second default copper ion concentration, passes through the buffering
Slot buffering, filter filtering and adsorption tank absorption are except entering the described first new liquid bath after copper ion, described the
PH is adjusted in one new liquid bath and enters the supply tank after adjusting concentration of hydrogen peroxide, adjusts concentration of hydrogen peroxide in the supply tank
Afterwards until the concentration of hydrogen peroxide of the etching solution in the supply tank enters the storage after reaching default concentration of hydrogen peroxide
Liquid bath.
Wherein, the etching fluid circulation further includes the second new liquid bath, and the second new liquid bath and the reservoir connect
Logical, the second new liquid bath is used to provide new etching solution for the reservoir.
Wherein, copper ion concentration monitor is connected on the reservoir, the copper ion concentration monitor is for monitoring
The copper ion concentration of the etching solution in the reservoir is greater than the described first default copper ion concentration, and is less than described second
When default copper ion concentration, the etching solution controlled in the reservoir enters the dashpot；The copper ion concentration prison
The copper ion concentration that control device is also used to monitor the etching solution in the reservoir is greater than the described second default copper ion concentration
When, the new etching solution controlled in the second new liquid bath enters the reservoir.
Wherein, pH detection meter is connected on the described first new liquid bath, the pH detection meter is for detecting the described first new liquid
The pH value of the etching solution in slot.
Wherein, the first concentration of hydrogen peroxide meter, first concentration of hydrogen peroxide are also connected on the described first new liquid bath
Count the concentration of hydrogen peroxide value for detecting the etching solution in the described first new liquid bath.
Wherein, the second concentration of hydrogen peroxide meter is connected on the feed tank, the second concentration of hydrogen peroxide meter is used for
Detect the concentration of hydrogen peroxide value of the etching solution in the feed tank.
Wherein, the adsorbent material in the adsorption tank is absorption resin, and the absorption resin is for adsorbing copper ion to remove
Remove the copper ion in the etching solution.
Wherein, the first pumping pump is connected between the supply tank and the reservoir, the first pumping pump is used for will
The etching solution in the feed tank is pumped into the reservoir.
Wherein, the second pumping pump is connected between the described second new liquid bath and the reservoir, the second pumping pump is used
In the new etching solution in the described second new liquid bath is pumped into the reservoir.
The present invention provides a kind of Etaching device, for the etching to substrate, including above-mentioned etching fluid circulation.
In conclusion etching fluid circulation of the invention is by being greater than the described first default copper ion to copper ion concentration
Concentration, and be less than the described second default copper ion concentration the etching solution filtering and impurity removing, absorption remove copper ion, adjust pH value and
So that the concentration of hydrogen peroxide in the etching solution reaches default concentration of hydrogen peroxide after tune concentration of hydrogen peroxide, and then described in warp
The etching solution of etching fluid circulation circulation becomes reusable etching solution, and reusable etching solution enters institute
It can be recycled after stating reservoir.Therefore, etching fluid circulation of the invention realizes the circulation to the etching solution, extends
The service life of etching solution, reduces the cost of etching solution.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of etching fluid circulation provided in an embodiment of the present invention.
Fig. 2 is the structural schematic diagram of etching solution supply in the prior art.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Etching fluid circulation of the invention can be applied to Etaching device.Etaching device includes etching as shown in Figure 1
Fluid circulation.
Etching solution is pumped into substrate 200 by pumping pump 100 during processing procedure by copper etch process in the industry at present
It is etched.However as the progress of etching process, the copper ion in etching solution is constantly accumulated, the copper ion concentration in etching solution
It constantly increases, when the copper ion concentration of etching solution reaches the upper limit of setting, the etching solution in reservoir 300 is exhausted directly to waste liquid
Slot 400 feeds new etching solution out of new liquid bath 500 after the etching solution emptying in reservoir 300 and is carried out again using such as Fig. 2 institute
Show, this will not only result in the waste of etching solution, the reduced service life of etching solution, but also pollute the environment.
Based on the above issues, the present invention provides a kind of etching fluid circulation, as shown in Figure 1.Etch fluid circulation packet
Reservoir 10 is included, the dashpot 20 being connected to the reservoir 10, the filter 30 being connected to the dashpot 20, with the mistake
The adsorption tank 40 that filter 30 is connected to, the first new liquid bath 50 be connected to the adsorption tank 40 and with the described first new liquid bath 50 company
Logical supply tank 60, the supply tank 60 are connected to the reservoir 10.Etching solution in the reservoir 10 is dense in copper ion
Degree is greater than the first default copper ion concentration, and when less than the second default copper ion concentration, by the dashpot 20 buffering, described
The filtering of filter 30 and the absorption of the adsorption tank 40 are except the described first new liquid bath 40 is entered after copper ion, in the described first new liquid
PH is adjusted in slot 40 and enters the supply tank 60 after adjusting concentration of hydrogen peroxide, adjusts concentration of hydrogen peroxide in the supply tank 60
Enter after the concentration of hydrogen peroxide of the etching solution in the supply tank 60 reaches default concentration of hydrogen peroxide afterwards described
Reservoir 10.In the present embodiment, the described first default copper ion concentration is the copper ion concentration of the etching solution to the erosion
Carving liquid influences lesser copper ion concentration, i.e., when the copper ion concentration of the etching solution is less than the described first default copper ion concentration
When, the etching solution can be directly etched；The second default copper ion concentration is that the copper ion concentration of the etching solution is logical
The copper ion concentration that the etching fluid circulation can not also remove is crossed, i.e., when the copper ion concentration of the etching solution is greater than described
When the second default copper ion concentration, the etching solution can not be also etched by etching fluid circulation circulation；Work as institute
The copper ion concentration for stating etching solution is greater than the described first default copper ion concentration, and is less than the described second default copper ion concentration
When, the etching solution is that can be recycled by the etching fluid circulation, and then reusable.In the adsorption tank 40
Adsorbent material be absorption resin, the absorption resin be used for adsorb copper ion to remove the copper ion in the etching solution.Institute
It states absorption resin and selects phosphoramidic acid chelating resin, the selection adsorption capacity of phosphoramidic acid chelating resin is strong, the suction to copper ion
Attached intensity is big, and the phosphoramidic acid chelating resin after adsorbing can degreasing reuse, and then it is cost-saved.
Etching fluid circulation of the invention is and small by being greater than the described first default copper ion concentration to copper ion concentration
In the etching solution filtering and impurity removing of the described second default copper ion concentration, absorption removes copper ion, adjusts pH value and adjusts peroxidating
So that the concentration of hydrogen peroxide in the etching solution reaches default concentration of hydrogen peroxide after hydrogen concentration, and then followed through the etching solution
The etching solution of loop system circulation becomes reusable etching solution, and reusable etching solution enters the reservoir
It can be recycled after 10.Therefore, etching fluid circulation of the invention realizes the circulation to the etching solution, extends etching
The service life of liquid reduces the cost of etching solution.In the present invention, etching solution is copper acid etching liquid.
It further, is exothermic reaction with reacting for hydrogen peroxide due to copper ion, the heat that reaction process generates can not
Disconnected accumulation, or even etching solution bumping can be caused, generate security risk.The application removes copper ion, so that hydrogen peroxide
It can not react with copper ion, the temperature of etching solution will not rise, and etching solution will not boil, and reduce security risk.Meanwhile
Since the etching solution content of copper ion after etching is higher, it is special except, just up to discharge standard, processing cost is high after Copper treatment to need.
The present invention also eliminate the etching solution after etching except process for copper, reduce costs.
The etching fluid circulation further includes the second new liquid bath 70, and the second new liquid bath 70 connects with the reservoir 10
It connects, the second new liquid bath 70 is used to provide new etching solution for the reservoir 10.Specifically, when the institute in the reservoir 10
When stating the copper ion concentration of etching solution greater than the second default copper ion concentration, the second new liquid bath 70 is used to be the storage
Liquid bath 10 provides new etching solution, to dilute the copper ion concentration for reducing the etching solution in the reservoir 10, when the storage
The copper ion concentration of the etching solution in liquid bath 10 is diluted to greater than the described first default copper ion concentration, and is less than described the
When two default copper ion concentrations, the etching solution in the reservoir 10 can be followed by the etching fluid circulation
Ring, so it is reusable.
Copper ion concentration monitor 80 is connected on the reservoir 10, the copper ion concentration monitor 80 is for monitoring
The copper ion concentration of the etching solution in the reservoir 10 is greater than the described first default copper ion concentration, and is less than described the
When two default copper ion concentrations, the etching solution is controlled from the reservoir 10 and enters the dashpot 20；The copper ion is dense
The copper ion concentration that degree monitor 80 is also used to monitor the etching solution in the reservoir 10 is greater than the described second default copper
When ion concentration, the new etching solution is controlled from the described second new liquid bath 70 and enters the reservoir 10.
The first pumping pump 90 is connected between the supply tank 60 and the reservoir 10, the first pumping pump 90 is used for
The etching solution in the supply tank 60 is pumped into the reservoir 10.
The second pumping pump 110, the second pumping pump are connected between the second new liquid bath 70 and the reservoir 10
110 for being pumped into the reservoir 10 for the new etching solution in the described second new liquid bath 70.
Further, third pumping pump 120 is also connected on the reservoir 10, the third pumping pump 120 is used for will
The etching solution in the reservoir 10 is pumped into substrate 130.
Specifically, the copper ion concentration monitor 80 be used to detect the copper of the etching solution in the reservoir 10 from
Sub- concentration.When the copper ion concentration of the etching solution in the reservoir 10 of the copper ion concentration monitor 80 monitoring is big
In the described first default copper ion concentration, and be less than the second default copper ion concentration when, the copper ion concentration monitor
The etching solution in the 80 control reservoirs 10 enters the dashpot 20, and the etching solution is successively through the dashpot 20
Buffering, the filtering of the filter 30 and the absorption of the adsorption tank 40 are except the described first new liquid bath 40 is entered after copper ion, in institute
It states and adjusts pH in the first new liquid bath 40 and enter the supply tank 60 after adjusting concentration of hydrogen peroxide, adjusted in the supply tank 60
Until the concentration of hydrogen peroxide of the etching solution in the supply tank 60 reaches default concentration of hydrogen peroxide after hydrogen peroxide concentration
When, the etching solution in the supply tank 60 is pumped into the reservoir 10 by the first pumping pump 90；When the copper from
The copper ion concentration for the etching solution in the reservoir 10 that sub- concentration monitors 80 monitor is greater than the described second default copper
When ion concentration, the new etching solution in the described second new liquid bath 70 is pumped into the liquid storage by the second pumping pump 110
Slot 10；When the copper ion concentration of the etching solution in the reservoir 10 of the copper ion concentration monitor 80 monitoring is less than
When the first default copper ion concentration, the etching solution in the reservoir 10 is pumped into described by the third pumping pump 120
Substrate 130 is etched.
PH detection meter 140 is connected on the first new liquid bath 50, the pH detection meter 140 is new for monitoring described first
The pH value of the etching solution in liquid bath 40.Liquid bath 170, the tune are adjusted specifically, being connected on the first new liquid bath 50
Fluid saving bath 170 is used for the feed adjustment liquid into the described first new liquid bath 50.Specifically, according to 140 monitoring of pH detection meter
The pH value of the etching solution in the first new liquid bath 40, it may be determined that the pH value of the etching solution and the pH of default pH value are inclined
Difference, and then the liquid bath 170 that adjusts can control the amount for entering the pH adjusting liquid of the described first new liquid bath 50 according to the pH deviation.
The first concentration of hydrogen peroxide meter 150, first concentration of hydrogen peroxide are also connected on the first new liquid bath 50
Meter 150 is for detecting the concentration of hydrogen peroxide value of the etching solution in the described first new liquid bath 50.Connect on the feed tank 60
It is connected to the second concentration of hydrogen peroxide meter 160, the second concentration of hydrogen peroxide meter 160 is used to monitor the institute in the feed tank 60
State the concentration of hydrogen peroxide value of etching solution.In the present embodiment, it is respectively connected on the first new liquid bath 50 and the feed tank 60
Hydrogen peroxide slot 180, the hydrogen peroxide slot 180 are used to feed hydrogen peroxide with the feed tank 60 to the first new liquid bath 50.
In specific implementation, according in the described first new liquid bath 50 of the first concentration of hydrogen peroxide meter 150 detection
The concentration of hydrogen peroxide value of etching solution, it may be determined that the concentration of hydrogen peroxide value of the etching solution in the first new liquid bath 50 with
First concentration of hydrogen peroxide deviation of default concentration of hydrogen peroxide value, and then the hydrogen peroxide slot 180 is according to first mistake
The control of hydrogen peroxide concentration deviation enters the amount of the hydrogen peroxide of the described first new liquid bath 40.Institute in the described first new liquid bath 40
Stating etching solution terminates after feeding hydrogen peroxide, and the etching solution enters the supply tank 60, when second concentration of hydrogen peroxide
Meter 160 monitoring the supply tank 60 in the etching solution concentration of hydrogen peroxide value still with default concentration of hydrogen peroxide value
When having deviation, the second concentration of hydrogen peroxide meter 160 can determine that the peroxidating of the etching solution in the feed tank 60
Second concentration of hydrogen peroxide deviation of hydrogen concentration and default concentration of hydrogen peroxide, and then the hydrogen peroxide slot 180 is according to described
The control of second concentration of hydrogen peroxide deviation enters the amount of the hydrogen peroxide of the feed tank 60.By adjusting the etching solution twice
Concentration of hydrogen peroxide can control concentration of hydrogen peroxide reach preset concentration.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, those skilled in the art can understand all or part of the processes for realizing the above embodiment, and wants according to right of the present invention
Made equivalent variations is sought, is still belonged to the scope covered by the invention.
Claims (10)
1. a kind of etching fluid circulation, which is characterized in that including reservoir, the dashpot being connected to the reservoir, with institute
State dashpot connection filter, the adsorption tank being connected to the filter, the first new liquid bath being connected to the adsorption tank with
And the supply tank being connected to the described first new liquid bath, the supply tank are connected to the reservoir；Etching in the reservoir
Liquid is greater than the first default copper ion concentration in copper ion concentration, and when less than the second default copper ion concentration, passes through the buffering
Slot buffering, filter filtering and adsorption tank absorption are except entering the described first new liquid bath after copper ion, described the
PH is adjusted in one new liquid bath and enters the supply tank after adjusting concentration of hydrogen peroxide, adjusts concentration of hydrogen peroxide in the supply tank
Afterwards until the concentration of hydrogen peroxide of the etching solution in the supply tank enters the storage after reaching default concentration of hydrogen peroxide
Liquid bath.
2. etching fluid circulation according to claim 1, which is characterized in that the etching fluid circulation further includes
Two new liquid baths, the second new liquid bath are connected to the reservoir, and the second new liquid bath for the reservoir for providing newly
Etching solution.
3. etching fluid circulation according to claim 2, which is characterized in that it is dense to be connected with copper ion on the reservoir
Monitor is spent, the copper ion concentration that the copper ion concentration monitor is used to monitor the etching solution in the reservoir is greater than
The first default copper ion concentration, and be less than the second default copper ion concentration when, control described in the reservoir
Etching solution enters the dashpot；The copper ion concentration monitor is also used to monitor the etching solution in the reservoir
When copper ion concentration is greater than the second default copper ion concentration, the new etching solution controlled in the second new liquid bath enters
The reservoir.
4. etching fluid circulation according to claim 1, which is characterized in that be connected with pH inspection on the first new liquid bath
Meter is surveyed, the pH value for detecting the etching solution in the described first new liquid bath is counted in the pH detection.
5. etching fluid circulation according to claim 1, which is characterized in that be also connected on the first new liquid bath
One concentration of hydrogen peroxide meter, the first concentration of hydrogen peroxide meter are used to detect the etching solution in the described first new liquid bath
Concentration of hydrogen peroxide value.
6. etching fluid circulation according to claim 1, which is characterized in that be connected with the second peroxide on the feed tank
Change hydrogen concentration meter, the hydrogen peroxide that the second concentration of hydrogen peroxide meter is used to detect the etching solution in the feed tank is dense
Angle value.
7. etching fluid circulation according to claim 1, which is characterized in that the adsorbent material in the adsorption tank is to inhale
Attached resin, the absorption resin is for adsorbing copper ion to remove the copper ion in the etching solution.
8. the etching fluid circulation according to claim 1, which is characterized in that the supply tank and the reservoir it
Between be connected with the first pumping pump, first pumping pump is for being pumped into the liquid storage for the etching solution in the feed tank
Slot.
9. the etching fluid circulation according to claim 2, connects between the second new liquid bath and the reservoir
There is the second pumping pump, the second pumping pump is for being pumped into the liquid storage for the new etching solution in the described second new liquid bath
Slot.
10. a kind of Etaching device, for the etching to substrate, which is characterized in that described in any item including such as claim 1-9
Etch fluid circulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811005589.9A CN109023375B (en) | 2018-08-30 | 2018-08-30 | Etching solution circulation system and etching device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811005589.9A CN109023375B (en) | 2018-08-30 | 2018-08-30 | Etching solution circulation system and etching device |
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| Publication Number | Publication Date |
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| CN109023375A true CN109023375A (en) | 2018-12-18 |
| CN109023375B CN109023375B (en) | 2021-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811005589.9A Active CN109023375B (en) | 2018-08-30 | 2018-08-30 | Etching solution circulation system and etching device |
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Cited By (3)
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| CN110172698A (en) * | 2019-06-24 | 2019-08-27 | 深圳市华星光电技术有限公司 | A kind of etch system |
| CN111304655A (en) * | 2020-03-16 | 2020-06-19 | 福建华佳彩有限公司 | Etching equipment |
| CN117344309A (en) * | 2023-12-05 | 2024-01-05 | 苏州芯慧联半导体科技有限公司 | Metal etching liquid recovery control system and control method |
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| CN111304655A (en) * | 2020-03-16 | 2020-06-19 | 福建华佳彩有限公司 | Etching equipment |
| CN117344309A (en) * | 2023-12-05 | 2024-01-05 | 苏州芯慧联半导体科技有限公司 | Metal etching liquid recovery control system and control method |
| CN117344309B (en) * | 2023-12-05 | 2024-03-01 | 苏州芯慧联半导体科技有限公司 | Metal etching liquid recovery control system and control method |
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