CN109014583B - Laser anaerobic processing device for preparing wave-absorbing silicon material - Google Patents
Laser anaerobic processing device for preparing wave-absorbing silicon material Download PDFInfo
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- CN109014583B CN109014583B CN201810815987.0A CN201810815987A CN109014583B CN 109014583 B CN109014583 B CN 109014583B CN 201810815987 A CN201810815987 A CN 201810815987A CN 109014583 B CN109014583 B CN 109014583B
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- cooling water
- silicon material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/703—Cooling arrangements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
A laser anaerobic processing device for preparing wave-absorbing silicon materials comprises a base, wherein the base is connected with the lower end of a cooling water cavity, the outer part of the upper end of the cooling water cavity is connected with an anaerobic processing cavity through threads, the middle part of the upper end of the cooling water cavity is a silicon material placing platform, the center of the cooling water cavity is provided with a step through hole, a silicon material to be processed is placed on a step of the step through hole, threads are processed on the side wall of the step through hole, a circular ring through hole bolt is matched with the threads on the side wall of the step through hole and is installed on the upper surface of the silicon material, and the cooling water cavity; the top of the anaerobic processing cavity is provided with a quartz glass window, and the side wall of the anaerobic processing cavity is connected with two gas switch valves; the cooling water cavity is connected with two cooling water switch valves; the invention can realize the processing of the silicon material in the oxygen-free environment, prevent the surface of the silicon material from becoming silicon dioxide in the laser processing process and simultaneously prevent the crystallization of deposited particles generated by laser ablation.
Description
Technical Field
The invention belongs to the technical field of laser processing, and particularly relates to a laser oxygen-free processing device for preparing wave-absorbing silicon materials.
Background
The ultrafast laser can be used for preparing a micro-nano structure on the surface of the material in a large area, and the change of the optical, mechanical and biological bionic properties and the like of the surface of the material is realized, so that the laser micro-nano manufacturing becomes a research hotspot. The wave-absorbing material has great application potential in the fields of aerospace, national defense and military, new energy and the like. Especially silicon material, can be used as solar battery in visible light wave band; a photoelectric detector can be made in an infrared band; the terahertz wave band can be used as an absorber and a radiation source. Therefore, the ultrafast laser processing technology is utilized to manufacture the micro-nano structure with a specific shape and a specific scale on the surface of the silicon material, so that the silicon material can absorb a specific frequency band, and the method has important significance for the production life of people and the national defense and military. The existing research shows that the wave absorbing performance of the material can be improved by the nano structure by utilizing the nano confinement effect; the nano porous structure is beneficial to realizing the long-range change of the dielectric constant/refractive index between the air medium and the material, and the improvement of the anti-reflection performance of the material is very obvious. Therefore, the preparation of the wave-absorbing material can be realized by preparing the nano structure or the nano porous structure on the surface of the silicon material.
However, silicon atoms are easily oxidized into silicon dioxide molecules in the laser processing process of the silicon material, so that the wave absorbing property of the surface of the silicon material is greatly reduced, and the silicon material is prevented from being oxidized into silicon dioxide molecules in the laser processing process of the silicon material, thereby solving the difficulty of research on the silicon material. Meanwhile, the melting point of the silicon material is low, and when deposited particles generated by laser ablation fall on the surface of the silicon material, the deposited particles are crystallized due to the high surface temperature of the base material, so that a nano structure or a nano porous structure is difficult to form on the surface of the silicon material, and the wave absorbing performance of the silicon material is greatly influenced, so that the crystallization of the ablated deposited particles is prevented, and the problem of preparing the wave absorbing silicon material is further difficult.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide the laser oxygen-free processing device for preparing the wave-absorbing silicon material, which can realize that the silicon material is not oxidized in the laser processing process; while preventing the deposited particles produced by ablation from crystallizing on the surface of the material.
In order to achieve the purpose, the invention adopts the technical scheme that:
a laser anaerobic processing device for preparing wave-absorbing silicon materials comprises a base 1, wherein the base 1 is connected with the lower end of a cooling water cavity 10 through threads, the outer part of the upper end of the cooling water cavity 10 is connected with an anaerobic processing cavity 4 through threads, and the middle part of the upper end of the cooling water cavity 10 is provided with a silicon material placing platform 7;
a step through hole is formed in the center of the silicon material placing platform 7, silicon materials 9 to be processed are placed on the step of the step through hole, threads are processed on the side wall of the step through hole, the circular ring through hole bolt 8 is matched with the threads on the side wall of the step through hole and is installed on the upper surface of the silicon materials 9, and the silicon materials 9 separate a cooling water cavity from an oxygen-free processing cavity.
The top of the anaerobic processing cavity 4 is provided with a quartz glass window 5, and the side wall of the anaerobic processing cavity 4 is connected with two gas switch valves 6.
The side wall of the cooling water cavity 10 is connected with two cooling water switch valves 2.
The anaerobic processing cavity 4 is connected with a pressure gauge 3.
The base 1 is provided with an upper cylindrical step, the side surface of the upper cylindrical step is provided with threads, and the upper cylindrical step is connected with the cooling water cavity 10 in a matching way.
The invention has the beneficial effects that:
the device can realize the processing of the silicon material in an oxygen-free environment, and prevent the surface of the silicon material from becoming silicon dioxide in the laser processing process, thereby changing the material property of the silicon material and influencing the physical property of the silicon material; meanwhile, the device can conduct and cool heat generated by laser ablation of the silicon material through water in the cooling water cavity, so that deposited particles generated by laser ablation are prevented from crystallizing, the preparation of silicon material surface nano particles and nano porous structures is realized, and the wave-absorbing material capable of efficiently absorbing electromagnetic waves is manufactured.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
Referring to fig. 1, the laser anaerobic processing device for preparing wave-absorbing silicon material comprises a base 1, wherein the base 1 is connected with the lower end of a cooling water cavity 10 through threads, the outer part of the upper end of the cooling water cavity 10 is connected with an anaerobic processing cavity 4 through threads, and the middle part of the upper end of the cooling water cavity 10 is a silicon material placing platform 7;
a step through hole is formed in the center of the silicon material placing platform 7, silicon materials 9 to be processed are placed on the step of the step through hole, threads are processed on the side wall of the step through hole, the circular ring through hole bolt 8 is matched with the threads on the side wall of the step through hole and is installed on the upper surface of the silicon materials 9, and the silicon materials 9 separate a cooling water cavity from an oxygen-free processing cavity.
The top of the anaerobic processing cavity 4 is provided with a quartz glass window 5, the side wall of the anaerobic processing cavity 4 is provided with three through holes distributed at equal angles, and a pressure gauge 3 and two gas switch valves 6 are respectively arranged.
And two through holes are arranged on the side wall of the cooling water cavity 10 and are respectively provided with a cooling water switch valve 2.
The base 1 is provided with an upper cylindrical step, the side surface of the upper cylindrical step is provided with threads, and the upper cylindrical step is connected with the cooling water cavity 10 in a matching way.
The working principle of the invention is as follows: the whole processing device is fixed on a laser processing moving platform through an installation base 1, an oxygen-free processing cavity 4 is rotationally taken off from the device, a silicon material 9 is placed on a step through hole in the center of a silicon material placing platform 7, the silicon material 9 is clamped and fixed on the silicon material placing platform 7 through a circular ring through hole bolt 8, and then the oxygen-free processing cavity 4 is rotationally fixed on the upper part of a cooling water cavity 10; opening two gas switch valves 6 of the anaerobic processing cavity 4, wherein one gas switch valve 6 is connected with an inert gas conveying pipeline, inert gas is continuously filled into the anaerobic processing cavity 4, air in the anaerobic processing cavity 4 is exhausted from the other gas switch valve 6, and the two gas switch valves 6 are closed after the air is exhausted, so that the anaerobic environment in the anaerobic processing cavity 4 is realized; opening two cooling water switch valves 2 of the cooling water cavity 10, wherein one cooling water switch valve 2 is connected with a cooling water conveying pipeline, cooling water is continuously filled into the cooling water cavity 10, and after the cooling water cavity 10 is filled with the cooling water, the two cooling water switch valves 2 are closed; at this time, the upper surface of the silicon material 9 is in an oxygen-free environment, and the lower surface is in close contact with cooling water; and opening the laser, enabling laser beams to enter the oxygen-free processing cavity 4 through the quartz glass window 5 at the top of the oxygen-free processing cavity 4 and irradiate the surface of the silicon material 9, so as to realize micro-nano processing of the silicon material 9 under the oxygen-free condition, and continuously conducting and transferring heat generated by laser ablation of the silicon material 9 by cooling water in the cooling water cavity 10 to realize cooling of the silicon material 9. When deposited particles generated by laser ablation fall on the surface of the silicon material 9, the deposited particles are not crystallized due to overhigh surface temperature of the base material, so that a nano structure or a nano porous structure is formed on the surface of the silicon material 9, and the wave-absorbing silicon material is prepared.
Claims (4)
1. The utility model provides a laser anaerobic machining device of preparation ripples silicon material, includes base (1), its characterized in that: the base (1) is connected with the lower end of the cooling water cavity (10) through threads, the outer part of the upper end of the cooling water cavity (10) is connected with an oxygen-free processing cavity (4) through threads, and the middle part of the upper end of the cooling water cavity (10) is provided with a silicon material placing platform (7);
a step through hole is formed in the center of the silicon material placing platform (7), silicon materials (9) to be processed are placed on the step of the step through hole, threads are processed on the side wall of the step through hole, a circular ring through hole bolt (8) is matched with the threads on the side wall of the step through hole and is installed on the upper surface of the silicon materials (9), and the silicon materials (9) separate a cooling water cavity from an oxygen-free processing cavity;
the anaerobic processing cavity (4) is connected with a pressure gauge (3).
2. The laser anaerobic processing device for preparing the wave-absorbing silicon material according to claim 1, which is characterized in that: the top of the anaerobic processing cavity (4) is provided with a quartz glass window (5), and the side wall of the anaerobic processing cavity (4) is connected with two gas switch valves (6).
3. The laser anaerobic processing device for preparing the wave-absorbing silicon material according to claim 1, which is characterized in that: the side wall of the cooling water cavity (10) is connected with two cooling water switch valves (2).
4. The laser anaerobic processing device for preparing the wave-absorbing silicon material according to claim 1, which is characterized in that: the base (1) is provided with an upper cylindrical step, the side surface of the upper cylindrical step is provided with threads, and the upper cylindrical step is connected with the cooling water cavity (10) in a matching way.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810815987.0A CN109014583B (en) | 2018-07-24 | 2018-07-24 | Laser anaerobic processing device for preparing wave-absorbing silicon material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810815987.0A CN109014583B (en) | 2018-07-24 | 2018-07-24 | Laser anaerobic processing device for preparing wave-absorbing silicon material |
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| Publication Number | Publication Date |
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| CN109014583A CN109014583A (en) | 2018-12-18 |
| CN109014583B true CN109014583B (en) | 2020-01-21 |
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| CN117464203B (en) * | 2023-12-28 | 2024-03-19 | 南京曼杰科电子工程有限公司 | Wave-absorbing material apparatus for producing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201195228Y (en) * | 2008-04-01 | 2009-02-18 | 沈阳航空工业学院 | A vacuum apparatus for laser processing |
| CN101549438A (en) * | 2009-05-15 | 2009-10-07 | 沈阳航空工业学院 | Vacuum box system for laser processing |
| CN102513440B (en) * | 2011-12-16 | 2013-10-23 | 江苏大学 | Method and device for forming magnesium alloy formed parts with excellent high-temperature mechanical property |
| JP5908623B1 (en) * | 2015-02-13 | 2016-04-26 | 京華堂實業股▲ふん▼有限公司 | Nanoparticle production system |
| CN105252143B (en) * | 2015-11-23 | 2017-09-29 | 哈尔滨工业大学 | A kind of powerful vacuum laser soldering device |
| CN108251892B (en) * | 2018-02-26 | 2021-03-23 | 湖北碳六科技有限公司 | Device and method for preparing single crystal diamond by laser-enhanced plasma CVD |
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