CN108987490A - 太阳能电池湿法刻蚀氧化后表层清洁的处理方法 - Google Patents
太阳能电池湿法刻蚀氧化后表层清洁的处理方法 Download PDFInfo
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- CN108987490A CN108987490A CN201810793139.4A CN201810793139A CN108987490A CN 108987490 A CN108987490 A CN 108987490A CN 201810793139 A CN201810793139 A CN 201810793139A CN 108987490 A CN108987490 A CN 108987490A
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- silicon nitride
- ammonia
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- silane
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000002344 surface layer Substances 0.000 title claims abstract description 33
- 230000003647 oxidation Effects 0.000 title claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 title claims abstract description 20
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 114
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 70
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000010410 layer Substances 0.000 claims abstract description 68
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 57
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910000077 silane Inorganic materials 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000005416 organic matter Substances 0.000 claims abstract description 12
- 230000009467 reduction Effects 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 7
- 239000006117 anti-reflective coating Substances 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 5
- 239000004615 ingredient Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 62
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 210000004209 hair Anatomy 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000001824 photoionisation detection Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000003010 ionic group Chemical group 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810793139.4A CN108987490B (zh) | 2018-07-18 | 2018-07-18 | 太阳能电池湿法刻蚀氧化后表层清洁的处理方法 |
Applications Claiming Priority (1)
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CN201810793139.4A CN108987490B (zh) | 2018-07-18 | 2018-07-18 | 太阳能电池湿法刻蚀氧化后表层清洁的处理方法 |
Publications (2)
Publication Number | Publication Date |
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CN108987490A true CN108987490A (zh) | 2018-12-11 |
CN108987490B CN108987490B (zh) | 2020-04-14 |
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CN201810793139.4A Active CN108987490B (zh) | 2018-07-18 | 2018-07-18 | 太阳能电池湿法刻蚀氧化后表层清洁的处理方法 |
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CN (1) | CN108987490B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011128134A2 (de) * | 2010-04-14 | 2011-10-20 | Robert Bosch Gmbh | Verfahren zur herstellung einer solarzelle sowie nach diesem verfahren hergestellte solarzelle |
CN102306680A (zh) * | 2011-08-23 | 2012-01-04 | 浙江嘉毅能源科技有限公司 | 晶体硅太阳能电池片减反射膜制备工艺 |
CN103606594A (zh) * | 2013-11-20 | 2014-02-26 | 英利能源(中国)有限公司 | 硅片的清理方法及减反射膜的制备方法 |
CN104319294A (zh) * | 2014-11-04 | 2015-01-28 | 苏州精创光学仪器有限公司 | 改进的镀氮化硅减反射膜方法 |
CN105633175A (zh) * | 2015-12-23 | 2016-06-01 | 泰州德通电气有限公司 | 一种可以降低抗pid电池外观不良率的工艺 |
-
2018
- 2018-07-18 CN CN201810793139.4A patent/CN108987490B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011128134A2 (de) * | 2010-04-14 | 2011-10-20 | Robert Bosch Gmbh | Verfahren zur herstellung einer solarzelle sowie nach diesem verfahren hergestellte solarzelle |
CN102306680A (zh) * | 2011-08-23 | 2012-01-04 | 浙江嘉毅能源科技有限公司 | 晶体硅太阳能电池片减反射膜制备工艺 |
CN103606594A (zh) * | 2013-11-20 | 2014-02-26 | 英利能源(中国)有限公司 | 硅片的清理方法及减反射膜的制备方法 |
CN104319294A (zh) * | 2014-11-04 | 2015-01-28 | 苏州精创光学仪器有限公司 | 改进的镀氮化硅减反射膜方法 |
CN105633175A (zh) * | 2015-12-23 | 2016-06-01 | 泰州德通电气有限公司 | 一种可以降低抗pid电池外观不良率的工艺 |
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CN108987490B (zh) | 2020-04-14 |
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Effective date of registration: 20191029 Address after: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant after: Xi'an Electric Power Co., Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co., Ltd Applicant after: State Electricity Investment Group the Yellow River Upstream Hydropower Development Co., Ltd. Applicant after: Qinghai Huanghe Hydropower Development Co. Ltd. Address before: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant before: Xi'an Electric Power Co., Ltd. Applicant before: State power investment group Xi'an Solar Power Co., Ltd. Xining branch Applicant before: State Electricity Investment Group the Yellow River Upstream Hydropower Development Co., Ltd. Applicant before: Qinghai Huanghe Hydropower Development Co. Ltd. |
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Effective date of registration: 20220321 Address after: 810007 No. 4, Jinsi Road, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee after: Xining solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee after: Xi'an solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 710100 Shaanxi Xi'an space base east Chang'an Avenue 589 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee before: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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