CN108987341B - Method for manufacturing chip - Google Patents

Method for manufacturing chip Download PDF

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Publication number
CN108987341B
CN108987341B CN201810554653.2A CN201810554653A CN108987341B CN 108987341 B CN108987341 B CN 108987341B CN 201810554653 A CN201810554653 A CN 201810554653A CN 108987341 B CN108987341 B CN 108987341B
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workpiece
dividing
chip
chips
region
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CN108987341A (en
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淀良彰
赵金艳
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

Provided is a method for manufacturing chips, which can manufacture a plurality of chips by dividing a plate-shaped workpiece without using an extension piece. The manufacturing method of the chip comprises the following steps: a laser processing step of irradiating only the chip region with a laser beam having a wavelength that is transparent to the workpiece along a predetermined dividing line, forming a modified layer along the predetermined dividing line of the chip region, and forming a reinforcing portion having an outer peripheral residual region as an unmodified layer; and a dividing step of dividing the workpiece into individual chips by applying force to the workpiece, and in the dividing step, the workpiece is divided into individual chips by applying force by heating and cooling.

Description

Method for manufacturing chip
Technical Field
The present invention relates to a method for manufacturing chips by dividing a plate-like workpiece into a plurality of chips.
Background
In order to divide a plate-like workpiece (workpiece) represented by a wafer into a plurality of chips, the following methods are known: a modified layer (modified region) modified by multiphoton absorption is formed by condensing a laser beam having a permeability inside a workpiece (for example, see patent document 1). Since the modified layer is brittle than other regions, the modified layer is formed along the lines (streets) to be divided and then a force is applied to the workpiece, so that the workpiece can be divided into a plurality of chips starting from the modified layer.
When a force is applied to a workpiece on which a modified layer is formed, for example, a method of adhering an expansion sheet (expansion band) having extensibility to the workpiece to expand the workpiece is adopted (for example, refer to patent document 2). In this method, generally, before a laser beam is irradiated to form a modified layer on a workpiece, an extension sheet is attached to the workpiece, and after the modified layer is formed, the extension sheet is extended to divide the workpiece into a plurality of chips.
Patent document 1: japanese patent laid-open No. 2002-192370
Patent document 2: japanese patent application laid-open No. 2010-206136
However, in the method of expanding the expansion sheet as described above, since the used expansion sheet cannot be reused, the cost required for manufacturing the chip is also liable to become high. In particular, since the high-performance extension sheet in which the adhesive material is not easily remained on the chip is expensive, the cost required for manufacturing the chip becomes high when such an extension sheet is used.
Disclosure of Invention
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for manufacturing a chip capable of manufacturing a plurality of chips by dividing a plate-like workpiece without using an extension piece.
According to one aspect of the present invention, there is provided a method for manufacturing chips, the method including manufacturing a plurality of chips from a workpiece, the workpiece including: a chip region divided into a plurality of regions as the chip by a plurality of division predetermined lines intersecting; and a peripheral remaining region surrounding the chip region, wherein the manufacturing method of the chip has the steps of: a holding step of directly holding the workpiece on a holding table; a laser processing step of irradiating only the chip region of the workpiece along the predetermined dividing line with the laser beam so as to position a converging point of the laser beam having a wavelength transparent to the workpiece inside the workpiece held on the holding table, forming a modified layer along the predetermined dividing line of the chip region, and forming the outer peripheral residual region as a reinforcing portion where the modified layer is not formed; a carrying-out step of carrying out the workpiece from the holding table after the laser processing step is performed; and a dividing step of dividing the work into the chips by applying a force to the work after the carrying-out step is performed, wherein the dividing step is performed by applying the force by heating and cooling, thereby dividing the work into the chips.
In one embodiment of the present invention, the laser processing step may be followed by a reinforcement portion removing step of removing the reinforcement portion before the dividing step is performed. In one embodiment of the present invention, the upper surface of the holding table may be made of a soft material, and the front surface side of the workpiece may be held by the soft material in the holding step.
In the method for manufacturing chips according to one embodiment of the present invention, since the modified layer is formed along the line to be divided by irradiating the chip region of the workpiece with the laser beam while the workpiece is directly held on the holding table, and then applying force by heating and cooling, the workpiece is divided into the chips, it is not necessary to use the extension sheet for dividing the workpiece into the chips by applying force to the workpiece. As described above, according to the method for manufacturing chips of one embodiment of the present invention, a plurality of chips can be manufactured by dividing a work as a plate-shaped work without using an extension piece.
In the method for manufacturing a chip according to one embodiment of the present invention, since only the chip region of the workpiece is irradiated with the laser beam to form the modified layer along the dividing line and the peripheral residual region is used as the reinforcing portion where the modified layer is not formed, the chip region is reinforced by the reinforcing portion. Therefore, the workpiece is not divided into individual chips by the force applied during conveyance or the like, and the workpiece cannot be appropriately conveyed.
Drawings
Fig. 1 is a perspective view schematically showing a structural example of a workpiece.
Fig. 2 is a perspective view schematically showing a configuration example of the laser processing apparatus.
Fig. 3 (a) is a cross-sectional view for explaining the holding step, and fig. 3 (B) is a cross-sectional view for explaining the laser processing step.
Fig. 4 (a) is a plan view schematically showing a state of the workpiece after the laser processing step, and fig. 4 (B) is a cross-sectional view schematically showing a state of the workpiece after the laser processing step.
Fig. 5 (a) and 5 (B) are cross-sectional views for explaining the reinforcement removing step.
Fig. 6 is a sectional view for explaining the dividing step.
Fig. 7 is a cross-sectional view for explaining a holding step of the modification.
Fig. 8 (a) is a cross-sectional view for explaining the dividing step of the modification, and fig. 8 (B) is a plan view schematically showing a state of the workpiece before the chip region is divided by the dividing step of the modification.
Description of the reference numerals
11: a workpiece (work); 11a: a front face; 11b: a back surface; 11c: a chip region; 11d: a peripheral remainder region; 13: dividing the predetermined line (spacer); 15: a region; 17: a laser beam; 19: a modified layer (modified region); 19a: a 1 st modified layer; 19b: a 2 nd modified layer; 19c: a 3 rd modified layer; 21: a fluid; 23: cracking; 25: a chip; 2: a laser processing device; 4: a base station; 6: chuck table (holding table); 6a: a holding surface; 6b: an absorption path; 8: a horizontal movement mechanism; 10: an X-axis guide rail; 12: an X-axis movable workbench; 14: an X-axis ball screw; 16: an X-axis pulse motor; 18: an X-axis scale; 20: a Y-axis guide rail; 22: y-axis moving workbench; 24: a Y-axis ball screw; 26: a Y-axis pulse motor; 28: a Y-axis scale; 30: a support table; 32: a valve; 34: a suction source; 36: a support structure; 38: a support arm; 40: a laser irradiation unit; 42: a camera; 44: flakes (porous flakes); 44a: an upper surface; 52: a dividing device; 54: chuck table (holding table); 54a: a holding surface; 54b: an absorption path; 54c: a heater; 54d: an absorption path; 56: a valve; 58: a suction source; 60: a valve; 62: a cutting unit; 64: a main shaft; 66: a cutting tool; 68: nozzles (cooling units).
Detailed Description
An embodiment of the present invention will be described with reference to the drawings. The method for manufacturing a chip according to the present embodiment includes a holding step (see fig. 3 a), a laser processing step (see fig. 3B, fig. 4a, and fig. 4B), a carry-out step, a reinforcement portion removing step (see fig. 5 a and fig. 5B), and a dividing step (see fig. 6).
In the holding step, a workpiece (workpiece) having a chip region divided into a plurality of regions by a dividing line and a peripheral remaining region surrounding the chip region is directly held on a chuck table (holding table). In the laser processing step, a laser beam having a wavelength that is transparent to the workpiece is irradiated, a modified layer (modified region) is formed in the chip region along a predetermined dividing line, and the outer peripheral remaining region is used as a reinforcing portion where the modified layer is not formed.
In the carrying-out step, the workpiece is carried out from the holding table. In the reinforcement removing step, the reinforcement is removed from the work. In the dividing step, a force is applied by heating and cooling, thereby dividing the workpiece into a plurality of chips. Hereinafter, a method for manufacturing a chip according to the present embodiment will be described in detail.
Fig. 1 is a perspective view schematically showing a configuration example of a workpiece (workpiece) 11 used in the present embodiment. As shown in fig. 1, the workpiece 11 is made of, for example, a semiconductor such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), or silicon carbide (SiC), or sapphire (Al) 2 O 3 ) Dielectric materials (insulators) such as soda lime glass, borosilicate glass, and quartz glass, or lithium tantalate (LiTa) 3 ) Lithium niobate (LiNb) 3 ) A disk-shaped wafer (substrate) made of an equal ferroelectric material (ferroelectric crystal).
The front surface 11a side of the workpiece 11 is divided into a plurality of regions 15 as chips by a plurality of lines (streets) 13 for dividing which intersect. Hereinafter, a substantially circular region including all the plurality of regions 15 as chips is referred to as a chip region 11c, and a ring-shaped region surrounding the chip region 11c is referred to as an outer peripheral remaining region 11d.
Devices such as an IC (Integrated Circuit: integrated circuit), a MEMS (Micro Electro Mechanical Systems: microelectromechanical system), an LED (Light Emitting Diode: light emitting Diode), an LD (Laser Diode: laser Diode), a Photodiode (photo Diode), a SAW (Surface Acoustic Wave: surface acoustic wave) filter, and a BAW (Bulk Acoustic Wave: bulk acoustic wave) filter are formed as necessary in each region 15 in the chip region 11c.
The workpiece 11 is divided along the line 13 to be divided to obtain a plurality of chips. Specifically, when the workpiece 11 is a silicon wafer, a chip functioning as a memory, a sensor, or the like is obtained, for example. In the case where the workpiece 11 is a gallium arsenide substrate, an indium phosphide substrate, or a gallium nitride substrate, a chip functioning as a light emitting element, a light receiving element, or the like is obtained, for example.
When the workpiece 11 is a silicon carbide substrate, for example, a chip functioning as a power device or the like is obtained. When the workpiece 11 is a sapphire substrate, for example, a chip functioning as a light-emitting element or the like is obtained. In the case where the workpiece 11 is a glass substrate made of soda lime glass, borosilicate glass, quartz glass, or the like, for example, a chip functioning as an optical member or a cover member (glass cover) is obtained.
In the case where the workpiece 11 is a ferroelectric substrate (ferroelectric crystal substrate) composed of a ferroelectric material such as lithium tantalate or lithium niobate, for example, a chip functioning as a filter, an actuator, or the like is obtained. The material, shape, structure, size, thickness, and the like of the workpiece 11 are not limited. Similarly, the types, the number, the shapes, the structures, the sizes, the arrangements, and the like of the devices formed in the region 15 as a chip are not limited. Devices may not be formed in the region 15 as a chip.
In the method for manufacturing chips according to the present embodiment, a plurality of chips are manufactured using a disk-shaped silicon wafer as the workpiece 11. Specifically, first, the following holding steps are performed: the workpiece 11 is directly held on the chuck table. Fig. 2 is a perspective view schematically showing a configuration example of a laser processing apparatus used in the present embodiment.
As shown in fig. 2, the laser processing apparatus 2 includes a base 4 on which each component is mounted. A horizontal movement mechanism 8 is provided on the upper surface of the base 4, and the horizontal movement mechanism 8 moves a chuck table (holding table) 6 for sucking and holding the workpiece 11 in the X-axis direction (machining feed direction) and the Y-axis direction (index feed direction). The horizontal movement mechanism 8 has a pair of X-axis guide rails 10, and the pair of X-axis guide rails 10 are fixed to the upper surface of the base 4 and are substantially parallel to the X-axis direction.
An X-axis moving table 12 is slidably mounted on the X-axis guide rail 10. A nut portion (not shown) is provided on the back surface side (lower surface side) of the X-axis moving table 12, and an X-axis ball screw 14 substantially parallel to the X-axis guide rail 10 is screwed into the nut portion.
An X-axis pulse motor 16 is connected to one end of the X-axis ball screw 14. The X-axis ball screw 14 is rotated by the X-axis pulse motor 16, and the X-axis moving table 12 is moved along the X-axis guide rail 10 in the X-axis direction. An X-axis scale 18 is provided at a position adjacent to the X-axis guide rail 10, and the X-axis scale 18 is used to detect the position of the X-axis moving table 12 in the X-axis direction.
A pair of Y-axis guide rails 20 substantially parallel to the Y-axis direction are fixed to the front surface (upper surface) of the X-axis moving table 12. A Y-axis moving table 22 is slidably mounted on the Y-axis guide rail 20. A nut portion (not shown) is provided on the rear surface side (lower surface side) of the Y-axis moving table 22, and a Y-axis ball screw 24 substantially parallel to the Y-axis guide rail 20 is screwed into the nut portion.
A Y-axis pulse motor 26 is connected to one end of the Y-axis ball screw 24. The Y-axis ball screw 24 is rotated by the Y-axis pulse motor 26, so that the Y-axis moving table 22 moves along the Y-axis guide rail 20 in the Y-axis direction. A Y-axis scale 28 is provided at a position adjacent to the Y-axis guide rail 20, and the Y-axis scale 28 is used to detect the position of the Y-axis moving table 22 in the Y-axis direction.
A support table 30 is provided on the front side (upper surface side) of the Y-axis movement table 22, and the chuck table 6 is disposed above the support table 30. The front surface (upper surface) of the chuck table 6 is a holding surface 6a that attracts and holds the rear surface 11b side (or the front surface 11a side) of the workpiece 11. The holding surface 6a is made of a porous material having high hardness such as alumina. However, the holding surface 6a may be made of a soft material typified by polyethylene, epoxy, or the like.
The holding surface 6a is connected to a suction source 34 (see fig. 3 a, etc.) via a suction path 6b (see fig. 3 a, etc.) formed in the chuck table 6, a valve 32 (see fig. 3 a, etc.), etc. A rotation drive source (not shown) is provided below the chuck table 6, and the chuck table 6 is rotated about a rotation axis substantially parallel to the Z-axis direction by the rotation drive source.
A columnar support structure 36 is provided behind the horizontal movement mechanism 8. A support arm 38 extending in the Y-axis direction is fixed to an upper portion of the support structure 36, and a laser irradiation unit 40 is provided at a distal end portion of the support arm 38, and the laser irradiation unit 40 pulses a laser beam 17 (see fig. 3B) having a wavelength (a wavelength that is difficult to be absorbed) that is transparent to the workpiece 11 to irradiate the workpiece 11 on the chuck table 6.
A camera 42 for photographing the front surface 11a side or the rear surface 11b side of the workpiece 11 is provided at a position adjacent to the laser irradiation unit 40. The image formed by capturing the object 11 and the like with the camera 42 is used, for example, when adjusting the positions of the object 11 and the laser irradiation unit 40.
The chuck table 6, the horizontal movement mechanism 8, the laser irradiation unit 40, the camera 42, and other components are connected to a control unit (not shown). The control unit controls the respective constituent elements so that the workpiece 11 is appropriately processed.
Fig. 3 (a) is a cross-sectional view for explaining the holding step. In fig. 3 (a), some of the constituent elements are shown by functional blocks. In the holding step, as shown in fig. 3 (a), for example, the back surface 11b of the workpiece 11 is brought into contact with the holding surface 6a of the chuck table 6. Then, the valve 32 is opened to allow the negative pressure of the suction source 34 to act on the holding surface 6a.
Thus, the workpiece 11 is sucked and held by the holding table 6 with the front surface 11a exposed upward. In the present embodiment, as shown in fig. 3 (a), the back surface 11b side of the workpiece 11 is directly held on the chuck table 6. That is, in the present embodiment, it is not necessary to attach an extension piece to the workpiece 11.
After the holding step, the following laser processing step is performed: a laser beam 17 having a wavelength that is transparent to the workpiece 11 is irradiated to form a modified layer along the line of division 13. Fig. 3 (B) is a cross-sectional view for explaining the laser processing step, fig. 4 (a) is a plan view schematically showing the state of the workpiece 11 after the laser processing step, and fig. 4 (B) is a cross-sectional view schematically showing the state of the workpiece 11 after the laser processing step. In fig. 3 (B), some of the constituent elements are shown by functional blocks.
In the laser processing step, first, the chuck table 6 is rotated so that, for example, the direction in which the intended dividing line 13 extends is parallel to the X-axis direction. Next, the chuck table 6 is moved to align the position of the laser irradiation unit 40 on the extension line of the intended dividing line 13. Then, as shown in fig. 3 (B), the chuck table 6 is moved in the X-axis direction (i.e., the direction in which the intended dividing line 13 as an object extends).
Then, at the timing when the laser irradiation unit 40 reaches directly above one of the boundaries between the chip region 11c and the outer peripheral residual region 11d existing at two points on the target division line 13, the irradiation of the laser beam 17 is started from the laser irradiation unit 40. In the present embodiment, as shown in fig. 3 (B), the laser beam 17 is irradiated from the laser irradiation unit 40 disposed above the workpiece 11 toward the front surface 11a of the workpiece 11.
The irradiation of the laser beam 17 is continued until the laser irradiation unit 40 reaches directly above the other of the boundaries between the chip region 11c and the outer peripheral residual region 11d existing at two places on the dividing line 13 as an object. That is, here, the laser beam 17 is irradiated only into the chip region 11c along the dividing line 13 as an object.
The laser beam 17 is irradiated so that the converging point is positioned at a predetermined depth from the front surface 11a (or the rear surface 11 b) of the workpiece 11. By converging the laser beam 17 having a wavelength that is transparent to the workpiece 11 into the interior of the workpiece 11 in this way, a part of the workpiece 11 can be modified by multiphoton absorption at and around the converging point, and a modified layer (modified region) 19 that is a starting point for division can be formed. In the present embodiment, since the laser beam 17 is irradiated only into the chip region 11c along the intended dividing line 13, the modified layer 19 is formed only in the chip region 11c along the intended dividing line 13.
After the modified layer 19 is formed at a predetermined depth along the intended dividing line 13, the modified layer 19 is formed at another depth along the intended dividing line 13 in the same manner. Specifically, for example, as shown in fig. 4B, the modified layers 19 (1 st modified layer 19a, 2 nd modified layer 19B, and 3 rd modified layer 19 c) are formed at 3 positions having different depths from the front surface 11a (or the rear surface 11B) of the workpiece 11.
However, the number and positions of the modified layers 19 formed along 1 line of division scheduled 13 are not particularly limited. For example, the number of modified layers 19 formed along 1 line 13 may be 1. In addition, the modified layer 19 is preferably formed under the condition that the crack reaches the front surface 11a (or the rear surface 11 b). Of course, the modified layer 19 may be formed under the condition that the crack reaches both the front surface 11a and the rear surface 11 b. This makes it possible to divide the workpiece 11 more appropriately.
When the workpiece 11 is a silicon wafer, the modified layer 19 is formed, for example, under the following conditions.
Processed object: silicon wafer
Wavelength of laser beam: 1340nm
Repetition frequency of laser beam: 90kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 180mm/s to 1000mm/s (typically 500 mm/s)
When the workpiece 11 is a gallium arsenide substrate or an indium phosphide substrate, the modified layer 19 is formed, for example, under the following conditions.
Processed object: gallium arsenide substrate and indium phosphide substrate
Wavelength of laser beam: 1064nm
Repetition frequency of laser beam: 20kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 100 mm/s-400 mm/s (typically 200 mm/s)
When the workpiece 11 is a sapphire substrate, the modified layer 19 is formed, for example, under the following conditions.
Processed object: sapphire substrate
Wavelength of laser beam: 1045nm
Repetition frequency of laser beam: 100kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 400mm/s to 800mm/s (typically 500 mm/s)
When the workpiece 11 is a ferroelectric substrate made of a ferroelectric material such as lithium tantalate or lithium niobate, the modified layer 19 is formed, for example, under the following conditions.
Processed object: lithium tantalate substrate and lithium niobate substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 15kHz
Output of laser beam: 0.02W to 0.2W
Movement speed of chuck table (process feed speed): 270 mm/s-420 mm/s (typically 300 mm/s)
When the workpiece 11 is a glass substrate made of soda lime glass, borosilicate glass, quartz glass, or the like, the modified layer 19 is formed, for example, under the following conditions.
Processed object: soda lime glass substrate, borosilicate glass substrate, and quartz glass substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 50kHz
Output of laser beam: 0.1W to 2W
Movement speed of chuck table (process feed speed): 300 mm/s-600 mm/s (400 mm/s is representative)
When the workpiece 11 is a gallium nitride substrate, the modified layer 19 is formed, for example, under the following conditions.
Processed object: gallium nitride substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 25kHz
Output of laser beam: 0.02W to 0.2W
Movement speed of chuck table (process feed speed): 90mm/s to 600mm/s (150 mm/s is representative)
When the workpiece 11 is a silicon carbide substrate, the modified layer 19 is formed, for example, under the following conditions.
Processed object: silicon carbide substrate
Wavelength of laser beam: 532nm
Repetition frequency of laser beam: 25kHz
Output of laser beam: 0.02W to 0.2W (typically 0.1W)
Movement speed of chuck table (process feed speed): 90 to 600mm/s (typically 90mm/s in the cleavage direction of the silicon carbide substrate and 400mm/s in the non-cleavage direction)
After a desired number of modified layers 19 are formed along the intended dividing lines 13, the above-described operation is repeated, and modified layers 19 are formed along all other intended dividing lines 13. As shown in fig. 4 (a), when the modified layer 19 is formed along all the lines 13, the laser processing step ends.
In the present embodiment, the modified layer 19 is formed only in the chip region 11c along the line to divide 13, and the modified layer 19 is not formed in the outer peripheral residual region 11d, so that the strength of the workpiece 11 is maintained by the outer peripheral residual region 11d. Thus, the workpiece 11 is not divided into individual chips by the force applied during conveyance or the like. In this way, the outer peripheral residual region 11d after the laser processing step functions as a reinforcing portion for reinforcing the chip region 11 on which the modified layer 19 is formed.
In the present embodiment, since the modified layer 19 is not formed in the outer peripheral residual region 11d, for example, even when the crack extending from the modified layer 19 reaches both the front surface 11a and the rear surface 11b and the workpiece 11 is completely divided, the chips are not separated or scattered. In general, when the modified layer 19 is formed in the workpiece 11, the workpiece 11 expands in the vicinity of the modified layer 19. In the present embodiment, the annular outer peripheral residual region 11d functioning as the reinforcing portion acts inward with the force of expansion generated by the formation of the modified layer 19, and thus the chips are pressed against each other, preventing the chips from falling off and scattering.
After the laser processing step, the following carry-out step is performed: the workpiece 11 is carried out from the chuck table 6. Specifically, for example, after the entire front surface 11a of the workpiece 11 is sucked by a conveying means (not shown) capable of sucking and holding the entire front surface 11a (or the rear surface 11 b) of the workpiece 11, the valve 32 is closed to shut off the negative pressure of the suction source 34, and the workpiece 11 is carried out. In the present embodiment, since the outer peripheral remaining region 11d functions as a reinforcing portion as described above, the workpiece 11 is not divided into individual chips by the force applied during conveyance or the like, and the workpiece 11 cannot be appropriately conveyed.
After the carry-out step, the reinforcement portion removing step is performed as follows: the reinforcement is removed from the work 11. Fig. 5 (a) and 5 (B) are cross-sectional views for explaining the reinforcement removing step. In fig. 5 (a) and 5 (B), some of the constituent elements are shown by functional blocks. For example, the reinforcement removing step is performed using the dividing device 52 shown in fig. 5 (a) and 5 (B).
The dividing device 52 has a chuck table 54 for sucking and holding the workpiece 11. A part of the upper surface of the chuck table 54 is a holding surface 54a for sucking and holding the chip region 11c of the workpiece 11. The holding surface 54a is connected to a suction source 58 via a suction path 54b formed in the chuck table 54, a valve 56, and the like. A heater (heating means) 54c is disposed below the holding surface 54a.
One end of a suction path 54d for sucking and holding the outer peripheral remaining region 11d (i.e., the reinforcing portion) of the workpiece 11 is opened at the other part of the upper surface of the chuck table 54. The other end side of the suction path 54d is connected to a suction source 58 via a valve 60 or the like. The chuck table 54 is coupled to a rotation driving source (not shown) such as a motor, and rotates about a rotation axis substantially parallel to the vertical direction.
A cutting unit 62 is disposed above the chuck table 54. The cutting unit 62 has a main shaft 64 as a rotation axis substantially parallel to the holding surface 54a. An annular cutting tool 66 is attached to one end side of the spindle 64, and the cutting tool 66 is configured by dispersing abrasive grains into a bonding material.
A rotary drive source (not shown) such as a motor is connected to the other end side of the spindle 64, and the cutting tool 66 attached to the one end side of the spindle 64 rotates by a force transmitted from the rotary drive source. The cutting unit 62 is supported by, for example, a lifting mechanism (not shown), by which the cutting tool 66 moves in the vertical direction.
A cutting tool escape groove (not shown) for preventing contact with the cutting tool 66 is formed in the upper surface of the chuck table 54 at a position corresponding to the boundary between the chip region 11c and the outer peripheral surplus region 11d of the workpiece 11.
In the reinforcement removing step, first, the rear surface 11b of the workpiece 11 is brought into contact with the holding surface 54a of the chuck table 54. Then, the valves 56 and 60 are opened, and the negative pressure of the suction source 58 is applied to the holding surface 54a and the like. Thus, the workpiece 11 is sucked and held by the chuck table 54 in a state where the front surface 11a is exposed upward. In the present embodiment, as shown in fig. 5 (a), the back surface 11b side of the workpiece 11 is directly held on the chuck table 54. That is, there is no need to attach an extension piece to the workpiece 11.
Then, the cutting tool 66 is rotated to cut into the boundary between the chip region 11c and the outer peripheral surplus region 11d of the workpiece 11. At the same time, as shown in fig. 5 (a), the chuck table 54 is rotated about a rotation axis substantially parallel to the vertical direction. Thereby, the workpiece 11 can be cut along the boundary between the chip region 11c and the outer peripheral residual region 11d.
Then, the valve 60 is closed, and the negative pressure of the suction source 58 to the outer peripheral remaining region 11d of the workpiece 11 is shut off. Then, as shown in fig. 5 (B), the outer peripheral remaining region 11d is removed from the chuck table 54. Thus, only the chip region 11c of the workpiece 11 remains on the chuck table 54.
After the reinforcement portion removal step, the following division step is performed: the workpiece 11 is divided into individual chips. Specifically, the workpiece 11 is divided by generating stress by heating and cooling. Fig. 6 is a sectional view for explaining the dividing step. In fig. 6, some of the constituent elements are shown by functional blocks.
Next, a dividing step is performed using the dividing device 52. As shown in fig. 6, the dividing device 52 further includes a nozzle (cooling unit) 68 disposed above the chuck table 54. In the dividing step of the present embodiment, after the workpiece 11 is heated by the heater 54c provided in the chuck table 54, the cooling fluid 21 is supplied from the nozzle 68 to cool the workpiece 11, and thus stress necessary for dividing the workpiece 11 is generated.
For example, a liquid such as water or a gas such as air can be used as the cooling fluid 21. When a liquid is used as the fluid 21, the liquid may be cooled to a low temperature (for example, a temperature about 0.1 to 10 ℃ higher than the freezing point) to such an extent that the liquid does not freeze. However, the type, flow rate, temperature, etc. of the fluid 21 are not particularly limited. For example, a low-temperature liquid such as liquid nitrogen which can absorb heat further by vaporization may be used.
After the heater 54c is operated to heat the workpiece 11, when the cooling fluid 21 is supplied from the nozzle 68 to cool the workpiece 11, the crack 23 is stretched from the modified layer 19 by the stress generated in the interior of the workpiece 11. Thereby, the workpiece 11 is divided into the plurality of chips 25 along the line 13.
The heating and cooling conditions (temperature, time, etc.) are set according to the type of the workpiece 11, etc. It is preferable that the heating of the workpiece 11 by the heater 54c and the cooling of the workpiece 11 by the liquid 21 supplied from the nozzle 68 are repeated until the workpiece 11 is appropriately divided.
In this way, in the present embodiment, the workpiece 11 can be divided into the chips 25 by applying a necessary force by heating and cooling. In the present embodiment, the workpiece 11 is cooled after being heated, but the workpiece 11 may be heated after being cooled. The method of heating and cooling is also not particularly limited.
As described above, in the method of manufacturing chips according to the present embodiment, in a state in which the workpiece (workpiece) 11 is directly held on the chuck table (holding table) 6, the modified layer 19 along the line of division 13 is formed by irradiating the laser beam 17 only to the chip region 11c of the workpiece 11, and then the workpiece 11 is divided into the chips 25 by applying force by heating and cooling, so that it is not necessary to use an extension sheet for dividing into the chips 25 by applying force to the workpiece 11. As described above, according to the method for manufacturing chips of the present embodiment, the silicon wafer, which is the plate-shaped workpiece 11, can be divided without using the extension piece, and the plurality of chips 25 can be manufactured.
In the method of manufacturing a chip according to the present embodiment, since only the chip region 11c of the workpiece 11 is irradiated with the laser beam 17 to form the modified layer 19 along the line of division 13 and the outer peripheral residual region 11d is used as a reinforcing portion where the modified layer 19 is not formed, the chip region 11c is reinforced by the reinforcing portion. Therefore, the workpiece 11 is not divided into the chips 25 by the force applied during the conveyance, and the workpiece 11 cannot be appropriately conveyed.
The present invention is not limited to the description of the above embodiments and the like, and can be variously modified and implemented. For example, in the holding step of the above embodiment, the back surface 11b side of the workpiece 11 is directly held by the chuck table 6, and the laser beam 17 is irradiated from the front surface 11a side, but the front surface 11a side of the workpiece 11 may be directly held by the chuck table 6, and the laser beam 17 may be irradiated from the back surface 11b side.
Fig. 7 is a cross-sectional view for explaining a holding step of the modification. In the holding step of this modification, as shown in fig. 7, for example, a chuck table (holding table) 6 having an upper surface composed of a porous sheet (porous sheet) 44 may be used, and the sheet 44 may be composed of a soft material typified by polyethylene, epoxy, or the like.
In the chuck table 6, the front surface 11a side of the workpiece 11 is sucked and held on the upper surface 44a of the sheet 44. This can prevent breakage of devices and the like formed on the front surface 11a side. The sheet 44 is a part of the chuck table 6, and can be repeatedly used together with the main body of the chuck table 6.
However, the upper surface of the chuck table 6 is not necessarily constituted by the porous sheet 44 described above, and may be constituted by a soft material at least to such an extent that it does not damage devices or the like formed on the front surface 11a side of the workpiece 11. Further, it is preferable that the sheet 44 is configured to be detachable from the main body of the chuck table 6, and to be replaceable in the event of breakage or the like.
In the above embodiment, the reinforcement removing step is performed after the carrying-out step and before the dividing step, but the reinforcement removing step may be performed after the laser processing step and before the carrying-out step, for example. In addition, in the case where the reinforcement removing step is performed after the carrying-out step and before the dividing step, it is not necessary to carry the work 11 after the reinforcement removing step, and thus, it is easy to avoid a problem that the work 11 cannot be suitably carried.
In addition, the reinforcement removing step may be omitted. In this case, for example, the range in which the modified layer 19 is formed in the laser processing step may be adjusted so that the width of the reinforcing portion is about 2mm to 3mm from the outer peripheral edge of the workpiece 11. In addition, for example, a groove may be formed in the reinforcement portion as a start point of the division before the chip region 11c is divided by the dividing step. Fig. 8 (a) is a cross-sectional view for explaining the dividing step of the modification, and fig. 8 (B) is a plan view schematically showing the state of the workpiece 11 before the chip region 11c is divided by the dividing step of the modification.
In the dividing step of the modification, as shown in fig. 8 (a) and 8 (B), the cutting tool 66 is cut into the outer peripheral remaining region 11d (i.e., the reinforcing portion) to form a groove 11e as a start point of division. The groove 11e is preferably formed along the line 13 for dividing, for example. By forming such grooves 11e, the workpiece 11 can be divided by the force generated by heating and cooling for each outer peripheral remaining region 11d. In the dividing step of the modification, the suction path 54d of the chuck table 54, the valve 60, and the like can be omitted.
The structures, methods, and the like of the above-described embodiments and modifications can be appropriately modified and implemented within a range not departing from the object of the present invention.

Claims (3)

1. A method for manufacturing chips, a plurality of chips are manufactured from a workpiece, the workpiece having: a chip region divided into a plurality of regions as the chip by a plurality of division predetermined lines intersecting; and a peripheral remaining region surrounding the chip region, wherein the manufacturing method of the chip has the steps of:
a holding step of directly holding the workpiece on a holding table;
a laser processing step of irradiating only the chip region of the workpiece along the predetermined dividing line with the laser beam so as to position a converging point of the laser beam having a wavelength transparent to the workpiece inside the workpiece held on the holding table, forming a modified layer along the predetermined dividing line of the chip region, and forming the outer peripheral residual region as a reinforcing portion where the modified layer is not formed;
a carrying-out step of carrying out the workpiece from the holding table to the dividing device after the laser processing step is performed; and
a dividing step of dividing the work into the chips by applying a force to the work after the carrying-out step is performed,
in the dividing step, the workpiece is divided into the chips by applying the force by heating and cooling in a state where the workpiece is directly held on the chuck table of the dividing apparatus.
2. The method for manufacturing a chip according to claim 1, wherein,
the method for manufacturing a chip further includes a reinforcement portion removing step of removing the reinforcement portion after the laser processing step and before the dividing step.
3. The method for manufacturing a chip according to claim 1 or 2, wherein,
the upper surface of the holding table is composed of a soft material,
in the holding step, the front side of the workpiece is held by the soft material.
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TWI742276B (en) 2021-10-11
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