CN108987341A - The manufacturing method of chip - Google Patents
The manufacturing method of chip Download PDFInfo
- Publication number
- CN108987341A CN108987341A CN201810554653.2A CN201810554653A CN108987341A CN 108987341 A CN108987341 A CN 108987341A CN 201810554653 A CN201810554653 A CN 201810554653A CN 108987341 A CN108987341 A CN 108987341A
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- China
- Prior art keywords
- machined object
- chip
- segmentation
- modification layer
- manufacturing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000011218 segmentation Effects 0.000 claims abstract description 57
- 230000004048 modification Effects 0.000 claims abstract description 54
- 238000012986 modification Methods 0.000 claims abstract description 54
- 230000002787 reinforcement Effects 0.000 claims abstract description 34
- 238000003754 machining Methods 0.000 claims abstract description 26
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 230000035699 permeability Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 5
- 239000007779 soft material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 22
- 238000005520 cutting process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 208000037656 Respiratory Sounds Diseases 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
The manufacturing method of chip is provided, the machined object of plate can be split and produce multiple chips without using extension piece.The manufacturing method of the chip includes following step: laser machining process, the laser beam for the wavelength that there is permeability for machined object is only irradiated to chip area along segmentation preset lines, modification layer is formed along the segmentation preset lines of chip area, and using periphery remaining area as the reinforcement part of not formed modification layer；And segmentation step, power is assigned to machined object and machined object is divided into each chip, in segmentation step, power is assigned by heating and cooling down, so that machined object is divided into each chip.
Description
Technical field
The present invention relates to the manufacturing methods that the machined object to plate was split and produced the chip of multiple chips.
Background technique
In order to be divided into multiple chips by the machined object (workpiece) of the plate of representative of chip, there is known such as lower sections
Method: making the laser beam with permeability be focused at the inside of machined object, is formed and has carried out modification by Multiphoton Absorbtion
It modifies layer (modified region) (for example, referring to patent document 1).Since modification layer is more crisp than other regions, pre- along segmentation
Alignment (spacing track) forms the backward machined object applied force of modification layer, so as to be starting point by machined object using the modification layer
It is divided into multiple chips.
When to the machined object applied force for being formed with modification layer, for example, using the extension piece (extension that will have extensibility
Band) it is pasted on machined object and the method that is extended (for example, referring to patent document 2).In the method, usually swash in irradiation
Light beam and on machined object formed modification layer before, will extension piece be pasted on machined object, then, formed modify layer after
Extension piece is extended and machined object is divided into multiple chips.
Patent document 1: Japanese Unexamined Patent Publication 2002-192370 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2010-206136 bulletin
It is used due to can not be used again but in the method being extended as described above to extension piece
Piece is extended, therefore expense needed for manufacture chip is also easy to get higher.Jointing material is particularly due to be not easy to remain on chip
High performance extension piece is at high price, therefore when using such extension piece, expense needed for manufacturing chip can also be got higher.
Summary of the invention
The present invention is completed in view of problem above point, its purpose is to provide can not use extension piece and to plate
Machined object be split to produce multiple chips chip manufacturing method.
According to one method of the present invention, the manufacturing method of chip is provided, produces multiple chips from machined object, the quilt
Machining object includes chip area, and a plurality of segmentation preset lines intersected are divided into the multiple regions as the chip；And it is outer
All remaining areas surround the chip area, wherein the manufacturing method of the chip has following step: step is kept, it will be by
Machining object is directly held in holding workbench；Laser machining process will be for being processed after implementing the holding step
There is object the focal point of the laser beam of the wavelength of permeability to be positioned in the inside of the machined object of the holding workbench
Mode only irradiates the laser beam to the chip area of machined object along the segmentation preset lines, along being somebody's turn to do for the chip area
Divide preset lines and form modification layer, and using the periphery remaining area as the reinforcement part of not formed modification layer；Step is moved out,
After implementing the laser machining process, machined object is moved out from the holding workbench；And segmentation step, implementing this
After moving out step, power is assigned to machined object and machined object is divided into each chip, in the segmentation step, is passed through
Heating and cooling are to assign the power, so that machined object is divided into each chip.
In one embodiment of the present invention, the segmentation step can also implemented after implementing the laser machining process
Before rapid, also there is the reinforcement part for removing the reinforcement part to remove step.In addition, in one embodiment of the present invention, the holding
The upper surface of workbench can also be made of soft material, in the holding step, keep quilt by the material of the softness
The face side of machining object.
In the manufacturing method of the chip of one embodiment of the present invention, machined object is directly being held in holding workbench
In the state of, laser beam only is irradiated to the chip area of machined object and forms the modification layer along segmentation preset lines, is then led to
Cross heating and it is cooling machined object is divided into each chip assigning power, therefore do not need in order to machined object applied force
Extension piece is used being divided into each chip.In this way, the manufacturing method of chip according to one method of the present invention, it can not
Use extension piece and produces multiple chips to being split as the machined object of the machined object of plate.
In addition, only being irradiated to the chip area of machined object in the manufacturing method of the chip of one embodiment of the present invention
Laser beam and formed along segmentation preset lines modification layer, and using periphery remaining area as it is not formed modification layer reinforcement
Portion, therefore chip area is reinforced by the reinforcement part.Therefore, machined object will not be caused to be divided into because of the power applied whens carrying etc.
Each chip and can not suitably carry machined object.
Detailed description of the invention
Fig. 1 is the perspective view for schematically showing the structural example of machined object.
Fig. 2 is the perspective view for schematically showing the structural example of laser processing device.
(A) of Fig. 3 is for the cross-sectional view for keeping step to be illustrated, (B) of Fig. 3 to be for laser machining process
The cross-sectional view being illustrated.
(A) of Fig. 4 is the top view of the state of the machined object after schematically showing laser machining process, Fig. 4's
(B) be machined object after schematically showing laser machining process state cross-sectional view.
(A) of Fig. 5 and (B) of Fig. 5 are the cross-sectional views for being illustrated to reinforcement part removal step.
Fig. 6 is the cross-sectional view for being illustrated to segmentation step.
Fig. 7 is the cross-sectional view being illustrated for the holding step to variation.
(A) of Fig. 8 is the cross-sectional view being illustrated for the segmentation step to variation, and (B) of Fig. 8 is schematically to show
The top view of the state of machined object before being split out by the segmentation step of variation to chip area.
Label declaration
11: machined object (workpiece)；11a: front；11b: the back side；11c: chip area；11d: periphery remaining area；13:
Divide preset lines (spacing track)；15: region；17: laser beam；19: modification layer (modified region)；19a: the 1 modification layer；19b: the
2 modification layers；19c: the 3 modification layer；21: fluid；23: crackle；25: chip；2: laser processing device；4: base station；6: chuck work
Make platform (keeping workbench)；6a: retaining surface；6b: attraction road；8: horizontal mobile mechanism；10:X axis rail；12:X axis mobile working
Platform；14:X axis ball-screw；16:X axis pulse motor；18:X axis scale；20:Y axis rail；22:Y axis mobile work platform；24:
Y-axis ball-screw；26:Y axis pulse motor；28:Y axis scale；30: supporting station；32: valve；34: attracting source；36: bearing structure
It makes；38: supporting arm；40: laser beam irradiation unit；42: camera；44: tablet (porous flake object)；44a: upper surface；52: point
Cut device；54: chuck table (keeps workbench)；54a: retaining surface；54b: attraction road；54c: heater；54d: attraction road；
56: valve；58: attracting source；60: valve；62: cutting unit；64: main shaft；66: cutting tool；68: nozzle (cooling unit).
Specific embodiment
It is illustrated referring to embodiment of the attached drawing to one embodiment of the present invention.The manufacturer of the chip of present embodiment
Method include keep step (referring to Fig. 3 (A)), laser machining process (referring to Fig. 3 (B), (A) of Fig. 4 and (B) of Fig. 4),
Move out step, reinforcement part removal step (referring to (A) of Fig. 5 and (B) of Fig. 5) and segmentation step (referring to Fig. 6).
In keeping step, machined object (workpiece) is directly held in chuck table (keeping workbench), this is added
There are work object divided preset lines to be divided into the chip area of multiple regions and the periphery remaining area around chip area.Swashing
In light procedure of processing, the laser beam for the wavelength that there is permeability for machined object is irradiated, is formed in chip area along segmentation
The modification layer (modified region) of preset lines, and using periphery remaining area as the reinforcement part of not formed modification layer.
In moving out step, machined object is moved out from holding workbench.Reinforcement part removal step in, by reinforcement part from
Machined object removal.In segmentation step, power is assigned by heating and cooling down, so that machined object is divided into multiple cores
Piece.Hereinafter, the manufacturing method of the chip of present embodiment is described in detail.
Fig. 1 is the solid for being shown schematically in the structural example of machined object used in present embodiment (workpiece) 11
Figure.As shown in Figure 1, machined object 11 is, for example, by silicon (Si), GaAs (GaAs), indium phosphide (InP), gallium nitride (GaN), carbon
The semiconductors such as SiClx (SiC), sapphire (Al2O3), soda-lime glass, pyrex, the dielectrics (insulator) such as quartz glass,
Or lithium tantalate (LiTa3), lithium niobate (LiNb3) etc. strong dielectrics (strong dielectric crystal) constitute discoid chip (base
Plate).
The a plurality of segmentation preset lines (spacing track) 13 that the positive side 11a of machined object 11 is intersected are divided into as chip
Multiple regions 15.In addition, the generally circular region comprising all multiple regions 15 as chip is referred to as chip below
Region 11c will be referred to as periphery remaining area 11d around the cricoid region of chip area 11c.
In each region 15 in chip area 11c, it is formed with IC (Integrated Circuit: collection as needed
At circuit), MEMS (Micro Electro Mechanical Systems: MEMS), LED (Light Emitting
Diode: light emitting diode), LD (Laser Diode: laser diode), photodiode (Photodiode), SAW
(Surface Acoustic Wave: surface acoustic wave) filter, BAW (Bulk Acoustic Wave: bulk acoustic wave) filter etc.
Device.
Multiple chips are obtained by being split along segmentation preset lines 13 to the machined object 11.Specifically,
In the case that machined object 11 is silicon wafer, such as obtain the chip functioned as memory or sensor etc..Added
In the case that work object 11 is GaAs substrate, indium phosphide substrate, gallium nitride base board, such as obtain as light-emitting component or light member
The chip that part etc. functions.
In the case where machined object 11 is silicon carbide substrate, such as obtain the core functioned as power device etc.
Piece.In the case where machined object 11 is sapphire substrate, such as obtain the chip functioned as light-emitting component etc..In quilt
In the case that machining object 11 is the glass substrate being made of soda-lime glass, pyrex, quartz glass etc., such as obtain conduct
Optical component or cover (glass cover) are come the chip that functions.
It is strong dielectric substrate (the strong dielectric crystalline substance being made of strong dielectrics such as lithium tantalate or lithium niobates in machined object 11
Structure base board) in the case where, such as obtain the chip functioned as filter or actuator etc..In addition, machined object 11
Material, shape, construction, size, thickness etc. are unrestricted.Equally, type, the number of the device in the region 15 as chip are formed in
Amount, shape, construction, size, configuration etc. are also unrestricted.Device can not also be formed in the region 15 as chip.
In the manufacturing method of the chip of present embodiment, discoid silicon wafer is used to manufacture as machined object 11
Multiple chips out.Specifically, firstly, carrying out following holding step: the machined object 11 is directly held in chucking work
Platform.Fig. 2 is the perspective view for being shown schematically in the structural example of laser processing device used in present embodiment.
As shown in Fig. 2, laser processing device 2 has the base station 4 for carrying each component.It is arranged in the upper surface of base station 4
There is horizontal mobile mechanism 8, which is used in attraction, the chuck table of machined object 11 is kept (to keep work
Platform) it 6 is moved in X-direction (processing direction of feed) and Y direction (index feed direction).Horizontal mobile mechanism 8 has one
To X-axis guide rail 10, which is fixed on the upper surface of base station 4 and substantially parallel with X-direction.
X-axis moving table 12 is slidably mounted in X-axis guide rail 10.In the back side of X-axis moving table 12
(lower face side) is provided with nut portions (not shown), the X-axis ball-screw 14 substantially parallel with X-axis guide rail 10 and the nut portions spiral shell
It closes.
X-axis pulse motor 16 is linked in the one end of X-axis ball-screw 14.Make X-axis by X-axis pulse motor 16
Ball-screw 14 rotates, so that X-axis moving table 12 be made to move in the X-axis direction along X-axis guide rail 10.With X-axis guide rail
10 adjacent positions are provided with X-axis scale 18, and the X-axis scale 18 is for detecting X-axis moving table 12 in the position of X-direction
It sets.
A pair of of the Y-axis guide rail substantially parallel with Y direction is fixed in the front (upper surface) of X-axis moving table 12
20.Y-axis moving table 22 is slidably mounted in Y-axis guide rail 20.In the back side (following table of Y-axis moving table 22
Surface side) it is provided with nut portions (not shown), the Y-axis ball-screw 24 substantially parallel with Y-axis guide rail 20 is screwed togather with the nut portions.
Y-axis pulse motor 26 is linked in the one end of Y-axis ball-screw 24.Make Y-axis by Y-axis pulse motor 26
Ball-screw 24 rotates, so that Y-axis moving table 22 be made to move in the Y-axis direction along Y-axis guide rail 20.With Y-axis guide rail
20 adjacent positions are provided with Y-axis scale 28, and the Y-axis scale 28 is for detecting Y-axis moving table 22 in the position of Y direction
It sets.
The face side (upper surface side) of Y-axis moving table 22 is provided with supporting station 30, on the top of the supporting station 30
Configured with chuck table 6.The front (upper surface) of chuck table 6 be to the back side side 11b of above-mentioned machined object 11 (or
The person front side 11a) the retaining surface 6a that attracts, keep.Retaining surface 6a is for example by the porous material structure with high hardness such as aluminium oxide
At.But retaining surface 6a can also be by being constituted by the soft material of representative of resins such as polyethylene or epoxies.
Retaining surface 6a via the inside for being formed in chuck table 6 attraction road 6b (referring to (A) etc. of Fig. 3) and valve 32
(referring to (A) etc. of Fig. 3) etc. is connect with source 34 (referring to (A) etc. of Fig. 3) is attracted.The lower section of chuck table 6 is provided with rotation
Turn driving source (not shown), chuck table 6 is revolved by the rotary driving source around the rotary shaft substantially parallel with Z-direction
Turn.
The rear of horizontal mobile mechanism 8 is provided with columnar supporting construction 36.It is fixed on the top of supporting construction 36
The supporting arm 38 extended in the Y-axis direction is provided with laser beam irradiation unit 40 in the front end of the supporting arm 38, the laser irradiation
40 impulse hunting of unit goes out the (ginseng of laser beam 17 for the wavelength (being difficult to absorbed wavelength) for having permeability for machined object 11
According to (B) of Fig. 3) and the machined object 11 on chuck table 6 is irradiated.
The position adjacent with laser beam irradiation unit 40 is provided with the positive side 11a or the back side side 11b to machined object 11
The camera 42 shot.Shoot the image to be formed for example to being added to machined object 11 etc. by camera 42
Use when work object 11 and the position of laser beam irradiation unit 40 etc. are adjusted.
Constituent elements and the control units such as chuck table 6, horizontal mobile mechanism 8, laser beam irradiation unit 40, camera 42
Connection (not shown).Control unit controls each component so that machined object 11 is suitably processed.
(A) of Fig. 3 is for the cross-sectional view for keeping step to be illustrated.In addition, passing through functional block in (A) of Fig. 3
To show a part of constituent element.Keep step in, as shown in (A) of Fig. 3, for example, make machined object 11 back side 11b and
The retaining surface 6a of chuck table 6 is contacted.Then, it opens valve 32 and makes the suction function in attraction source 34 in retaining surface 6a.
Machined object 11 is attracted to the state that top is exposed with the positive side 11a, is maintained on holding workbench 6 as a result,.
In addition, in the present embodiment, as shown in (A) of Fig. 3, the back side side 11b of machined object 11 is directly maintained at chucking work
On platform 6.That is, in the present embodiment, not needing to paste machined object 11 extension piece.
After the holding step, carry out following laser machining process: irradiating has permeability for machined object 11
The laser beam 17 of wavelength forms the modification layer along segmentation preset lines 13.(B) of Fig. 3 is for carrying out to laser machining process
The cross-sectional view of explanation, (A) of Fig. 4 are the vertical views of the state of the machined object 11 after schematically showing laser machining process
Figure, (B) of Fig. 4 is the cross-sectional view of the state of the machined object 11 after schematically showing laser machining process.In addition, scheming
In 3 (B), a part of constituent element is shown by functional block.
In laser machining process, firstly, chuck table 6 is made to rotate and for example make the segmentation preset lines 13 as object
The direction extended is parallel with X-direction.Then, make chuck table 6 mobile and make the position of laser beam irradiation unit 40
It is aligned on extended line for the segmentation preset lines 13 of object.Then, as shown in (B) of Fig. 3, make chuck table 6 in X-direction
It is moved on (that is, direction that the segmentation preset lines 13 as object are extended).
Then, it is reached in laser beam irradiation unit 40 and is present at two in the segmentation preset lines 13 as object, core
The opportunity of the surface of one side on the boundary between panel region 11c and periphery remaining area 11d opens from the laser beam irradiation unit 40
The irradiation of beginning laser beam 17.In the present embodiment, the laser as shown in (B) of Fig. 3, from the top for being configured at machined object 11
The positive 11a of illumination unit 40 towards machined object 11 irradiates laser beam 17.
Persistently carry out the laser beam 17 irradiation until laser beam irradiation unit 40 arrival be present in it is pre- as the segmentation of object
On alignment 13 two at, the surface of the another party on boundary between chip area 11c and periphery remaining area 11d.That is, this
In, laser beam 17 is only irradiated into chip area 11c along the segmentation preset lines 13 as object.
In addition, with focal point is located in the inside of machined object 11 away from depth as defined in positive 11a (or back side 11b)
The mode of position irradiate the laser beam 17.In this way, the laser by making the wavelength that there is permeability for machined object 11
Beam 17 converges at the inside of machined object 11, can be in focal point and its nearby by Multiphoton Absorbtion to machined object 11
A part is modified, and the modification layer (modified region) 19 of the starting point as segmentation is formed.In the present embodiment, along conduct
The segmentation preset lines 13 of object only irradiate laser beam 17 into chip area 11c, therefore along the segmentation preset lines as object
13 only form modification layer 19 in chip area 11c.
After foring modification layer 19 in the position of defined depth along the segmentation preset lines 13 as object, according to
Same sequence forms modification layer 19 in the position of another depth along the segmentation preset lines 13 as object.Specifically,
For example, as shown in (B) of Fig. 4, in 3 different position shapes of the depth of the positive 11a (or back side 11b) apart from machined object 11
At modification layer 19 (the 1st modification layer 19a, the 2nd modification layer 19b, the 3rd modification layer 19c).
But the quantity and position for dividing the modification layer 19 that preset lines 13 are formed along 1 are not particularly limited.Example
Such as, the quantity for dividing the modification layer 19 that preset lines 13 are formed along 1 is also possible to 1.Additionally, it is preferred that reaching front in crackle
Modification layer 19 is formed under conditions of 11a (or back side 11b).It is of course also possible to reach the double of front 11a and back side 11b in crackle
Modification layer 19 is formed under conditions of side.Thereby, it is possible to more suitably be divided to machined object 11.
Modification layer 19 is formed in the case where machined object 11 is silicon wafer, such as according to following condition.
Machined object: silicon wafer
The wavelength of laser beam: 1340nm
The repetition rate of laser beam: 90kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: (representative be 500mm/ to 180mm/s~1000mm/s
s)
Change in the case where machined object 11 is GaAs substrate or indium phosphide substrate, such as according to following condition formation
Matter layer 19.
Machined object: GaAs substrate, indium phosphide substrate
The wavelength of laser beam: 1064nm
The repetition rate of laser beam: 20kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: (representative be 200mm/ to 100mm/s~400mm/s
s)
Modification layer 19 is formed in the case where machined object 11 is sapphire substrate, such as according to following condition.
Machined object: sapphire substrate
The wavelength of laser beam: 1045nm
The repetition rate of laser beam: 100kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: (representative be 500mm/ to 400mm/s~800mm/s
s)
In the case where machined object 11 is the strong dielectric substrate being made of strong dielectrics such as lithium tantalate or lithium niobates, example
Such as modification layer 19 is formed according to following condition.
Machined object: lithium tantalate substrate, lithium niobate substrate
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 15kHz
The output of laser beam: 0.02W~0.2W
The movement speed (processing feed speed) of chuck table: (representative be 300mm/ to 270mm/s~420mm/s
s)
The case where machined object 11 is the glass substrate being made of soda-lime glass, pyrex or quartz glass etc.
Under, such as formed according to following condition and modify layer 19.
Machined object: soda-lime glass substrate, pyrex substrate, quartz glass substrate
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 50kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: (representative be 400mm/ to 300mm/s~600mm/s
s)
Modification layer 19 is formed in the case where machined object 11 is gallium nitride base board, such as according to following condition.
Machined object: gallium nitride base board
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 25kHz
The output of laser beam: 0.02W~0.2W
The movement speed (processing feed speed) of chuck table: 90mm/s~600mm/s (representative is 150mm/s)
Modification layer 19 is formed in the case where machined object 11 is silicon carbide substrate, such as according to following condition.
Machined object: silicon carbide substrate
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 25kHz
The output of laser beam: 0.02W~0.2W (representative is 0.1W)
The movement speed (processing feed speed) of chuck table: (representative be in silicon carbide to 90mm/s~600mm/s
It is 90mm/s on the cleavage direction of substrate, is 400mm/s on non-cleavage direction)
After foring the modification layer 19 of required quantity along the segmentation preset lines 13 as object, it is repeated
The movement stated forms modification layer 19 along other all segmentation preset lines 13.As shown in (A) of Fig. 4, when along all points
When cutting the formation modification layer 19 of preset lines 13, laser machining process terminates.
In the present embodiment, due to only forming modification layer 19 in chip area 11c along segmentation preset lines 13, outside
All remaining area 11d do not form modification layer 19, therefore the intensity for keeping machined object 11 by periphery remaining area 11d.
As a result, will not because carry etc. whens apply power due to cause machined object 11 to be divided into each chip.In this way, laser machining process
Periphery remaining area 11d later is sent out as the reinforcement part for being reinforced the chip area 11 for being formed with modification layer 19
Wave function.
In addition, in the present embodiment, layer 19 is modified due to not formed in periphery remaining area 11d, such as even if
In the shape that the crackle extended from modification layer 19 reaches the both sides of front 11a and back side 11b and is fully segmented machined object 11
Under condition, each chip will not fall off, is discrete.In general, when forming modification layer 19 in machined object 11, in the modification layer 19
Neighbouring machined object 11 expands.In the present embodiment, the cricoid periphery functioned and as reinforcement part is surplus
Remaining region 11d acts on the power of the expansion generated by the formation of modification layer 19 inwardly, to pin each chip, it is therefore prevented that de-
It falls, is discrete.
After laser machining process, carries out following moving out step: machined object 11 is moved out from chuck table 6.
Specifically, being closed for example after being adsorbed by entirety of the handling unit (not shown) to the positive 11a of machined object 11
Valve closing 32 and the negative pressure for cutting off attraction source 34, machined object 11 are moved out, wherein the handling unit can be to machined object 11
The entirety of positive 11a (or back side 11b) is adsorbed, is kept.In addition, in the present embodiment, as described above, periphery remaining area
Domain 11d is functioned as reinforcement part, therefore machined object 11 will not be caused to be divided into respectively because of the power applied whens carrying etc.
A chip and can not suitably carry machined object 11.
After moving out step, carries out following reinforcement part removal step: reinforcement part is removed from machined object 11.Fig. 5
(A) and (B) of Fig. 5 be for the cross-sectional view that is illustrated of reinforcement part removal step.In addition, in (A) and Fig. 5 of Fig. 5
(B) in, a part of constituent element is shown by functional block.For example, being filled using dividing shown in (A) of Fig. 5 and (B) of Fig. 5
52 are set to carry out reinforcement part removal step.
Segmenting device 52 has the chuck table 54 for being attracted machined object 11, being kept.The chucking work
A part of the upper surface of platform 54 is the retaining surface 54a for being attracted the chip area 11c of machined object 11, being kept.It keeps
Face 54a is connect via the attraction road 54b for the inside for being formed in chuck table 54 and valve 56 etc. with attraction source 58.In addition, at this
The lower section of retaining surface 54a configures having heaters (heating unit) 54c.
The attraction road 54d for being attracted, being kept for periphery remaining area 11d (that is, reinforcement part) to machined object 11
One end the upper surface of chuck table 54 other a part opening.The another side of attraction road 54d is via valve 60 etc.
It is connect with source 58 is attracted.The rotary driving sources such as the chuck table 54 and motor connection (not shown), around big with vertical direction
Parallel rotary shaft is caused to be rotated.
Cutting unit 62 is configured in the top of chuck table 54.Cutting unit 62 has substantially flat with retaining surface 54a
The capable main shaft 64 as rotary shaft.Cricoid cutting tool 66 is installed in the one end of main shaft 64, which is
It is constituted and abrasive grain is distributed in bond material.
It is linked with the rotary driving sources such as motor (not shown) in the another side of main shaft 64, is installed on one end of main shaft 64
The cutting tool 66 of side is rotated by the power transmitted from the rotary driving source.Cutting unit 62 is for example by elevating mechanism
Bearing (not shown), cutting tool 66 are moved in the vertical direction by the elevating mechanism.
In addition, in the upper surface of chuck table 54, in the chip area 11c and periphery remaining area with machined object 11
The corresponding position in boundary between 11d, is formed with for preventing the cutting tool contacted with cutting tool 66 from (not schemed with slot is kept out of the way
Show).
In reinforcement part removal step, make the back side 11b of machined object 11 and the retaining surface 54a of chuck table 54 first
Contact.Then, valve 56,60 is opened, makes the suction function in attraction source 58 in retaining surface 54a etc..Machined object 11 is as a result, with front
The side 11a is attracted to the state that top is exposed, is maintained on chuck table 54.In addition, in the present embodiment, such as Fig. 5
(A) shown in, the back side side 11b of machined object 11 is directly maintained on chuck table 54.That is, not needed here to being added yet
Work object 11 pastes extension piece.
Then, make cutting tool 66 rotate and cut machined object 11 chip area 11c and periphery remaining area 11d it
Between boundary.Meanwhile as shown in (A) of Fig. 5, revolve chuck table 54 around the rotary shaft substantially parallel with vertical direction
Turn.Thereby, it is possible to cut off machined object 11 along the boundary between chip area 11c and periphery remaining area 11d.
Then, valve 60, negative pressure of the cutting attraction source 58 for the periphery remaining area 11d of machined object 11 are closed.Then,
As shown in (B) of Fig. 5, periphery remaining area 11d is removed from chuck table 54.It is only stayed on chuck table 54 as a result,
The chip area 11c of lower machined object 11.
After reinforcement part removes step, carries out following segmentation step: machined object 11 is divided into each chip.Tool
For body, machined object 11 is split and heating and cooling down to generate stress.Fig. 6 is for carrying out to segmentation step
The cross-sectional view of explanation.In addition, a part of constituent element is shown by functional block in Fig. 6.
Then, step is split using segmenting device 52.As shown in fig. 6, segmenting device 52, which also has, is configured at chuck
The nozzle (cooling unit) 68 of the top of workbench 54.In the segmentation step of present embodiment, by being set to chuck work
Make platform 54 heater 54c machined object 11 is heated after, the fluid 21 cooling from the nozzle 68 supply is cold
But machined object 11, thus stress needed for generating segmentation machined object 11.
Such as the gases such as the liquid such as water or air are able to use as cooling fluid 21.Use liquid as stream
In the case where body 21, the liquid can be cooled to the lower temperature of uncongealable degree (for example, higher than freezing point in advance
0.1 DEG C~10 DEG C or so of temperature).But type, flow, temperature of fluid 21 etc. are not particularly limited.For example, can also
To use the liquid of the low temperature such as the liquid nitrogen that can further absorb heat by gasifying.
Heater 54c is acted after being heated to machined object 11, is being cooled down when being supplied from nozzle 68
Fluid 21 and when being cooled down to machined object 11, crackle 23 is made by the stress generated in the inside of machined object 11
It is stretched from modification layer 19.Machined object 11 is divided into multiple chips 25 along segmentation preset lines 13 as a result,.
The condition (temperature, time etc.) of heating and cooling is set according to type of machined object 11 etc..Additionally, it is preferred that anti-
Carry out again heater 54c to the heating of machined object 11 and the liquid 21 supplied from nozzle 68 to the cooling of machined object 11 until
Until machined object 11 is suitably divided.
In this way, in the present embodiment, the power of needs is assigned by heating and cooling down, so as to by machined object 11
It is divided into each chip 25.In addition, in the present embodiment, cooled down after it heated machined object 11, but can also be with
It is heated after cooling machined object 11.Heating and cooling method are also not particularly limited.
As described above, machined object (workpiece) 11 is directly being kept in the manufacturing method of the chip of present embodiment
In the state of chuck table (keep workbench) 6, laser beam 17 only is irradiated and shape to the chip area 11c of machined object 11
At the modification layer 19 along segmentation preset lines 13, then, machined object 11 is divided into and heating and cooling down to assign power
Each chip 25, therefore do not need to use extension piece to apply force to be divided into each chip 25 to machined object 11.This
Sample, the manufacturing method of chip according to the present embodiment can be without using extension piece and to the machined object 11 as plate
Silicon wafer is split and produces multiple chips 25.
In addition, only swashing to the chip area 11c of machined object 11 irradiation in the manufacturing method of the chip of present embodiment
Light beam 17 and form the modification layer 19 along segmentation preset lines 13, and using periphery remaining area 11d as not formed modification layer
19 reinforcement part, therefore chip area 11c is reinforced by the reinforcement part.Therefore, will not cause to be added because of the power applied whens carrying etc.
Work object 11 is divided into each chip 25 and can not suitably carry machined object 11.
In addition, being able to carry out various changes the present invention is not limited to the record of above embodiment etc. and implementing.Example
Such as, in the holding step of above embodiment, the back side side 11b of machined object 11 is directly held in chuck table 6, from
Laser beam 17 is irradiated in the positive side 11a, but the positive side 11a of machined object 11 can also be directly held in chuck table 6, from
Laser beam 17 is irradiated in the back side side 11b.
Fig. 7 is the cross-sectional view being illustrated for the holding step to variation.In the holding step of the variation, such as
Shown in Fig. 7, such as upper surface also can be used by 44 chuck table constituted of tablet (porous flake object) of Porous shape
(keeping workbench) 6, the tablet 44 by the soft material of representative of resins such as polyethylene or epoxies by being constituted.
In the chuck table 6, the positive side 11a of machined object 11 is attracted, is maintained at the upper surface of tablet 44
44a.Thereby, it is possible to prevent the breakage of device for being formed in the positive side 11a etc..The tablet 44 is one of chuck table 6
Point, it can be with the main body of chuck table 6 etc. together Reusability.
But the upper surface of chuck table 6 is not required to be made of the tablet 44 of above-mentioned Porous shape, as long as by
The soft material of the degree of damage will not be at least caused to constitute i.e. to the device etc. for the positive side 11a for being formed in machined object 11
It can.Additionally, it is preferred that tablet 44 is configured to be loaded and unloaded relative to the main body of chuck table 6, it can be in damaged feelings
Condition is inferior to be replaced.
In addition, in the above-described embodiment, carry out reinforcement part after moving out step, before segmentation step and remove step,
But such as reinforcement part can also be carried out after laser machining process, before moving out step and remove step.In addition, when moving out step
In the case where carrying out reinforcement part removal step after rapid, before segmentation step, do not need after reinforcement part removes step to quilt
Machining object 11 is carried, therefore is easy to avoid a problem that can not suitably carrying machined object 11.
Alternatively, it is also possible to omit reinforcement part removal step.It in this case, such as can be to the shape in laser machining process
It is adjusted at the range of modification layer 19, so that the width of reinforcement part is 2mm~3mm from the periphery genesis of machined object 11
Left and right.In addition, for example conduct can also be formed in reinforcement part before being split by segmentation step to chip area 11c
The slot of the starting point of segmentation.(A) of Fig. 8 is the cross-sectional view being illustrated for the segmentation step to variation, and (B) of Fig. 8 is to show
Bowing for the state of machined object 11 before being split by the segmentation step of variation to chip area 11c is shown to meaning property
View.
In the segmentation step of variation, as shown in (A) of Fig. 8 and (B) of Fig. 8, cutting tool 66 is set to cut periphery surplus
Remaining region 11d (that is, reinforcement part) and formed as divide starting point slot 11e.It is preferred that slot 11e is for example along segmentation preset lines
13 form.By forming such slot 11e, can by the power by heating and cooling down generation by machined object 11 according to each outer
All remaining area 11d are split.In addition, the attraction road of chuck table 54 can be omitted in the segmentation step of variation
54d and valve 60 etc..
In addition, as long as the construction of above embodiment and variation, method etc. are in the range for not departing from the purpose of the present invention
It is inside just able to carry out and suitably changes and implement.
Claims (3)
1. a kind of manufacturing method of chip produces multiple chips from machined object, which includes chip area,
The a plurality of segmentation preset lines intersected are divided into the multiple regions as the chip；And periphery remaining area, surround the core
Panel region, wherein the manufacturing method of the chip has following step:
Step is kept, machined object is directly held in holding workbench；
Laser machining process, after implementing the holding step, by swashing for the wavelength for machined object with permeability
The focal point of light beam is positioned in the mode of the inside of the machined object of the holding workbench, only along the segmentation preset lines
The laser beam is irradiated to the chip area of machined object, forms modification layer along the segmentation preset lines of the chip area, and
And using the periphery remaining area as the reinforcement part of not formed modification layer；
Step is moved out, after implementing the laser machining process, machined object is moved out from the holding workbench；And
Segmentation step assigns power to machined object and machined object is divided into each be somebody's turn to do after implementing this and moving out step
Chip,
In the segmentation step, the power is assigned by heating and cooling down, so that machined object is divided into each chip.
2. the manufacturing method of chip according to claim 1, wherein
The manufacturing method of the chip is after implementing the laser machining process, and before implementing the segmentation step, also having will
The reinforcement part of reinforcement part removal removes step.
3. the manufacturing method of chip according to claim 1 or 2, wherein
The upper surface of the holding workbench is made of soft material,
In the holding step, the face side of machined object is kept by the material of the softness.
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| JP2017111044A JP6855127B2 (en) | 2017-06-05 | 2017-06-05 | Chip manufacturing method |
| JP2017-111044 | 2017-06-05 |
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| KR (1) | KR102553014B1 (en) |
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| CN113710408A (en) * | 2019-04-19 | 2021-11-26 | 东京毅力科创株式会社 | Processing apparatus and processing method |
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| KR20180133214A (en) | 2018-12-13 |
| TWI742276B (en) | 2021-10-11 |
| CN108987341B (en) | 2024-03-01 |
| KR102553014B1 (en) | 2023-07-06 |
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