CN108987319A - EFEM and the method for importing substitution gas to EFEM - Google Patents

EFEM and the method for importing substitution gas to EFEM Download PDF

Info

Publication number
CN108987319A
CN108987319A CN201810550223.3A CN201810550223A CN108987319A CN 108987319 A CN108987319 A CN 108987319A CN 201810550223 A CN201810550223 A CN 201810550223A CN 108987319 A CN108987319 A CN 108987319A
Authority
CN
China
Prior art keywords
room
gas
nozzle
efem
substitution gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810550223.3A
Other languages
Chinese (zh)
Other versions
CN108987319B (en
Inventor
冈部勉
五十岚宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of CN108987319A publication Critical patent/CN108987319A/en
Application granted granted Critical
Publication of CN108987319B publication Critical patent/CN108987319B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ventilation (AREA)

Abstract

The present invention provides a kind of EFEM device that internal substitution gas concentration more can be equably improved compared to the past.EFEM of the invention, including Room the 1st, can import substitution gas；Room 2nd, via being provided with filter and flow into the 1st interconnecting part of above-mentioned substitution gas from above-mentioned Room 1st when circulating current is formed and flow out the 2nd interconnecting part of above-mentioned substitution gas to above-mentioned Room 1st when above-mentioned circulating current is formed and be connected to the lower section of above-mentioned Room 1st；Gas flow forming part forms above-mentioned circulating current between above-mentioned Room 1st and above-mentioned Room 2nd；Gas is discharged from above-mentioned Room 1st or above-mentioned Room 2nd in gas discharge section；1st nozzle is configured in above-mentioned Room 1st, has the 1st opening, and the above-mentioned substitution gas supplied from above-mentioned gas supply source is stated Room the 1st from above-mentioned 1st opening upwards and is released；And the 2nd nozzle, there is the 2nd opening, and above-mentioned substitution gas is released from above-mentioned 2nd opening.

Description

EFEM and the method for importing substitution gas to EFEM
Technical field
The present invention relates in semiconductor factory from conveying container in process chamber conveying wafer (Wafer) EFEM with And the method to EFEM importing substitution gas.
Background technique
In the manufacturing process of semiconductor, referred to as FOUP (front open type wafer box) or FOSB (open front fortune dress are used Case) etc. wafer conveying container carry out the conveying of the wafer between each processing unit.In addition, transporting container from such wafer When transporting wafer to process chamber, EFEM (Equipment Front End Module, front equipment end module) can be used.EFEM In, form the cleaner space of the environment being referred to as in the ratio factory of microenvironment etc., via the space in wafer conveying container and Wafer is transported between process chamber.Therefore, the environment that wafer exposes can also be tieed up in the conveying from wafer conveying container to process chamber Cleaning is held, protects wafer from the influence (referring to patent document 1) of oxidation etc..
In addition, in recent years, it is also proposed that there is the EFEM for the circular form that gas can be made to recycle inside EFEM.Circular form EFEM is by recycling the substitution gas such as nitrogen inside EFEM, so as to reduce the consumption of gas.
Prior art document
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2010-109250
Summary of the invention
Invention technical problem to be solved
However, there is the nitrogen supplied from supply unit uneven distribution in EFEM in the EFEM for importing nitrogen and ask Topic.In the case that especially maintenance etc. needs inside being set as atmospheric environment, need to be replaced inside EFEM with nitrogen again, so And in existing EFEM, in the displacement of such nitrogen, there is asking for the nitrogen gas concn for the inside for being difficult equably to improve EFEM Topic.As a result, in existing EFEM, so that nitrogen gas concn whole in EFEM is reached specified value and take a long time, There is a problem of the stop time of the device in semiconductor factory elongated grade.
The present invention is completed in view of problem above, and it is an object of the present invention to provide a kind of set compared to more capable of equably improving inside in the past The EFEM device of the concentration of ventilation body and a kind of method for importing substitution gas to EFEM.
Solve the means of technical problem
EFEM device of the invention EFEM of the invention, including Room the 1st, can import substitution gas；Room 2nd, warp By be provided with filter and when circulating current is formed from above-mentioned Room 1st flow into above-mentioned substitution gas the 1st interconnecting part and The 2nd interconnecting part of above-mentioned substitution gas is flowed out to above-mentioned Room 1st and is connected under above-mentioned Room 1st when the formation of above-mentioned circulating current Side；Gas flow forming part forms above-mentioned circulating current between above-mentioned Room 1st and above-mentioned Room 2nd；Gas discharge section, from upper State Room the 1st or above-mentioned Room 2nd discharge gas；1st nozzle is configured in above-mentioned Room 1st, has at least along as the 1st side To discontinuously or the 1st opening that is continuously formed, and by the above-mentioned substitution gas supplied from above-mentioned gas supply source from the above-mentioned 1st Opening upwards state the releasing of Room the 1st；And the 2nd nozzle, have along being parallel to the direction in above-mentioned 1st direction discontinuously or continuously The 2nd opening formed, and will be released from the above-mentioned substitution gas that above-mentioned substitution gas supply source supplies from above-mentioned 2nd opening.
EFEM of the invention with the 1st opening the 1st nozzle and with have be parallel to the 1st opening formed the 2nd 2nd nozzle of opening, and substitution gas can be released from two sides of the 1st nozzle and the 2nd nozzle.In addition, the 1st opening and the 2nd is opened Opening's edge as defined in direction discontinuously or be continuously formed, therefore can be in EFEM with such opening and the EFEM of nozzle A wide range of interior configuration discharge substitution gas opening, and the Room the 1st and Room the 2nd of EFEM can be more uniformly improved than the past In substitution gas concentration.
In addition, for example above-mentioned 2nd nozzle can also be configured at above-mentioned Room 2nd, and above-mentioned substitution gas is discarded to the 2nd Room.
In such EFEM, the 1st nozzle of substitution gas is released in Room the 1st because not only having, also has and is put in Room the 2nd 2nd nozzle of substitution gas out, therefore can be compared to displacement gas in the Room the 1st and Room the 2nd for more uniformly improving EFEM in the past The concentration of body.Particularly, in such EFEM device, even if the air-flow in the 1st interconnecting part from setting filter is difficult to Substitution gas effectively can be oriented to it by using the 2nd nozzle by the corner portion etc. of Room the 2nd of direction, so as to The nitrogen gas concn of Room the 2nd was more uniformly improved than the past.
In addition, said flow forming portion can also be set side by side in above-mentioned 1st interconnecting part with above-mentioned filter；It is also possible to Above-mentioned 1st nozzle being configured in above-mentioned Room 1st and above-mentioned 2nd nozzle being configured in above-mentioned Room 2nd from up and down direction to press from both sides The mode of said flow forming portion and above-mentioned filter and be configured.
In such EFEM, by the nozzle for configuring substitution gas up and down in gas flow forming part and filter, thus The both sides of Room 1st and Room the 2nd can directly feed nitrogen by nozzle, and therefore, it is difficult to generate to be led by the aeration resistance of filter The deviation of the nitrogen gas concn of cause can more uniformly improve the nitrogen gas concn in EFEM than the past.In addition, by the 1st nozzle and 2nd nozzle clamps filter, so as to prevent the pollution of filter.
In addition, for example, above-mentioned 2nd nozzle can also be configured in a manner of being located at height identical with above-mentioned 1st nozzle In above-mentioned Room 1st, above-mentioned substitution gas can be discarded to above-mentioned Room 1st.
Because such EFEM is configured in a manner of releasing the wide area that the opening of nitrogen has in horizontal direction, because This reduces from the substitution gas of nozzle and is difficult to the part reached, can be compared to the Room the 1st and the 2nd for more uniformly improving EFEM in the past The concentration of substitution gas in room.
The method according to the present invention for importing substitution gas to EFEM includes
1st releases step, using being configured at Room the 1st, and have at least along the 1st direction as horizontal direction discontinuously or 1st nozzle of the 1st opening being continuously formed will be put from the substitution gas that substitution gas supply source supplies from above-mentioned 1st opening Out to above-mentioned Room 1st；
2nd release step, using have along be parallel to above-mentioned 1st direction direction discontinuously or be continuously formed the 2nd 2nd nozzle of opening releases the above-mentioned substitution gas supplied from substitution gas supply source from above-mentioned 2nd opening；
Step is discharged, via being provided with filter and flow into above-mentioned displacement gas from above-mentioned Room 1st when circulating current is formed 1st interconnecting part of body and the 2nd interconnecting part for flowing out above-mentioned substitution gas to above-mentioned Room 1st in the formation of above-mentioned circulating current, from It is connected to Room the 2nd or the above-mentioned Room 1st discharge gas of the lower section of above-mentioned Room 1st；With
Air-flow set-up procedure, the air-flow that adjustment forms above-mentioned circulating current between above-mentioned Room 1st and above-mentioned Room 2nd are formed The driving in portion.
The method for importing substitution gas to EFEM involved according to the present invention, the 1st carried out by progress by the 1st nozzle Step is released, the 2nd releasing step carried out by the 2nd nozzle, so as to release from the opening of a wide range of interior configuration in EFEM Substitution gas, and compared to the concentration for the 1st Room and the 2nd indoor substitution gas for more uniformly improving EFEM in the past.In addition, according to The introduction method of such substitution gas, can the time required for the gas displacement by shortening EFEM, and shorten semiconductor The stop time of device in factory, to improve production efficiency.
In addition, for example, above-mentioned 1st releasing step and above-mentioned 2nd releasing step can also be in said flow set-up procedures Stop carrying out in the state of the driving of said flow forming portion.
By carrying out the importing of substitution gas in the state of stopped the driving of gas flow forming part, using the 1st nozzle and The substitution gas that 2nd nozzle is released can be effectively discharged out before substitution gas imports existing dry gas etc. in EFEM.In addition, Existing dry air etc. in preceding EFEM can also be prevented from being imported by substitution gas to mix and be difficult to the substitution gas newly imported Discharged problem shortens the time required for the gas displacement of EFEM.
In addition, for example, above-mentioned 2nd nozzle can also be configured in above-mentioned Room 2nd, the above-mentioned 2nd releases step can will be above-mentioned Substitution gas is discarded to above-mentioned Room 2nd.
Substitution gas introduction method in this way, not only in Room the 1st, Room the 2nd also releases substitution gas, so as to than Past more uniformly improves the concentration of the 1st Room and the substitution gas in Room the 2nd of EFEM.Particularly, in this way to The method of EFEM substitution gas is difficult to the air-flow of the 1st interconnecting part from setting filter the corner of Room the 2nd of direction Point etc., substitution gas is effectively oriented to by it by using the 2nd nozzle, so as to compared to more uniformly raising the 2nd in the past The nitrogen gas concn of room.
Detailed description of the invention
Fig. 1 is the skeleton diagram for indicating the flowing of the substitution gas in EFEM involved in the 1st embodiment of the invention.
Fig. 2 is to indicate the 1st~the 4th nozzle and the 1st~the 4th nozzle of variation possessed by EFEM shown in FIG. 1 Skeleton diagram.
Fig. 3 is the skeleton diagram for the 1st~the 4th nozzle for indicating that EFEM involved in the 2nd embodiment has.
Fig. 4 is the skeleton diagram for indicating the flowing of the substitution gas in EFEM involved in the 3rd embodiment of the invention.
Fig. 5 is the skeleton diagram for the 1st and the 2nd nozzle for indicating that EFEM shown in Fig. 4 has.
Fig. 6 is the flow chart for indicating to import an example of the method for nitrogen to EFEM shown in FIG. 1.
Fig. 7 is the reduced figure for showing the displaced oxygen concentration with the nitrogen into EFEM shown in FIG. 1.
Symbol description
50、450……EFEM
Room 54 ... the 1st
The 1st forward area 54a ...
The 1st return area of 54b ...
58 ... the 1st interconnecting parts
60 ... gas flow forming parts
61 ... blowing fans
62 ... filters
Room 64 ... the 2nd
The 2nd forward area 64a ...
The 2nd return area of 64b ...
65 ... the 2nd interconnecting parts
66 ... oxymeters
67 ... lower part interconnecting parts
68 ... gas discharge sections
69 ... midfeathers
71,271 ... the 1st nozzles
71a, 271a ... the 1st is open
72,272,472 ... the 2nd nozzle
72a, 272a, 472a ... the 2nd is open
73 ... the 3rd nozzles
73a ... the 3rd is open
74 ... the 4th nozzles
74a ... the 4th is open
75,175,275,375,475 ... piping
78 ... substitution gas supply sources
90 ... arrows
L1, L2, L3, L4 ... length
The interval L5, L6 ...
Specific embodiment
Illustrate the present invention below based on embodiment shown in the drawings.
Fig. 1 is the skeleton diagram of EFEM50 involved in the 1st embodiment of the invention.EFEM50 (front equipment end module, Equipment Front End Module) it is in semiconductor factory for transporting container in the wafer as conveying wafer Join wafer institute between FOUP (front open type wafer box) (not shown) and the process chamber (not shown) handled relative to wafer The device used.
EFEM50 has in internal the 2nd Room 64 for forming the referred to as clean space of microenvironment, is incorporated in the crystalline substance of FOUP Circle is transported to process chamber by the 2nd Room 64.
Arrow 90 in Fig. 1 is the usual operating condition for indicating to carry out conveying of wafer etc. in the 2nd Room 64 of EFEM50 Under, it is formed in the state of the circulating current in EFEM50.It, can be to being set to the 2nd in EFEM50 involved in present embodiment Room 64 top (if by the 2nd Room 64 as level portion if be second part) the 1st Room 54 and be connected to the 1st Room 54 64 liang of Room the 2nd side of lower section import the nitrogen as substitution gas.In addition, up and down direction is made in the explanation of EFEM50 For Z-direction, using direction vertical with Z axis and parallel with a metope in EFEM50 as X-direction, will with Z axis and The vertical direction of Y-axis is as Y direction to being illustrated.
It is connected to for 65 two as shown in Figure 1, being provided with the 1st interconnecting part 58 between the 1st Room 54 and the 2nd Room 64 with the 2nd interconnecting part Portion, the 1st interconnecting part 58 and the 2nd interconnecting part 65 are connect with the 1st Room 54 and the 2nd Room 64.
When normal operating conditions, the nitrogen for being imported into the 1st Room 54 and the 2nd Room 64 connects via the 1st interconnecting part 58 and the 2nd Lead to portion 65 and move, as shown in figure 1 shown in arrow 90, is formed in the circulating current recycled between the 1st Room 54 and the 2nd Room 64.Such as Fig. 1 Shown, the conveying of the wafer between FOUP and process chamber is to form the nitrogen recycled between the 1st Room 54 and the 2nd Room 64 It is carried out in the state of the circulating current of gas.
EFEM50 also has the 1st nozzle 71, the 2nd nozzle 72, the 3rd nozzle 73, the other than the 1st Room 54 and the 2nd Room 64 4 nozzles 74, gas flow forming part 60, filter 62, gas discharge section 68 and oxymeter 66 etc..Although in addition, not shown in Fig. 1 Show, EFEM50, which has, is set to the 2nd Room 64 and the transfer robot for transporting wafer, or for connecting FOUP or the 2nd Loading port device of room 64 etc..
As shown in Figure 1, nitrogen directly can be imported to the 1st Room 54 via the 1st nozzle 71 and the 3rd nozzle 73 (referring to Fig. 2) Gas.Although the 1st Room 54 has the dry air importing nozzle for importing dry air in addition, Fig. 1 is not shown.In addition, EFEM50 In, nitrogen can also be introduced directly into the 2nd Room 64 via the 2nd nozzle 72 and the 4th nozzle 74.
Fig. 2 (a) is the skeleton diagram for the 1st~the 4th nozzle 71~74 for indicating that EFEM50 shown in FIG. 1 has.1st~the 4th Nozzle is connect via piping 75 with substitution gas supply source 78 (referring to Fig.1), is supplied via piping 75 to each 1st~the 4th nozzle Nitrogen.Substitution gas supply source 78 is for example made of nitrogen gas tank.Linker substitution gas supply source 78 and the 1st~the 4th nozzle 71~ The shape of 74 piping 75 is not limited to the part connected to the 1st~the 4th nozzle 71~74 independently branch.For example, it is also possible to It is that there is the 2nd nozzle 72 of connection and the 1st nozzle 71,74 and of the 4th nozzle the piping 175 of the variation as shown in Fig. 2 (b) The shape of the part of 3rd nozzle 73, is not particularly limited.In addition, being not limited to as the substitution gas that EFEM50 is used The nitrogen that present embodiment uses, inertia or the reducibility gas etc. being also possible to other than nitrogen.
As depicted in figs. 1 and 2, the 1st nozzle 71 is along the 1st direction (side parallel with X-axis in Fig. 1 as horizontal direction To) extend, and there are multiple 1st opening 71a along the interrupted formation in the 1st direction.1st nozzle 71 will be supplied by substitution gas The nitrogen that source 78 supplies is discarded to the 1st Room 54 from the 1st opening 71a linearly arranged on the 1st direction.1st opening 71a court It is open downwards, the 1st nozzle 71 releases nitrogen towards 58 side of the 1st interconnecting part of the configurating filtered device 62.
In 1st nozzle 71, along length L1 (the 1st opening from an end in the 1st direction for forming the 1st opening 71a One end of 71a starts the length of the other end to the 1st opening 71a of the other end) although being not particularly limited, but from right EFEM50 is supplied uniformly across from the perspective of nitrogen, the length L2 tri- along the 1st direction of the 1st Room 54 preferably shown in FIG. 1 / mono- or more, further preferably more than half.In addition, the 1st direction of the 1st opening 71a of arrangement is preferred in the 1st nozzle 71 For the rectilinear direction on the one side for the horizontal direction being parallel in approximately cuboid EFEM50, it is also possible to the side relative to EFEM50 Other directions except inclined direction.In addition, the 1st nozzle 71 also can have the fine crack shape being formed continuously along the 1st direction The 1st opening, at this point, the 1st one end being open fill along the length L1 in the 1st direction for forming the 1st opening with fine crack is to another The length at end indicates.
As shown in Figure 1, the 2nd nozzle 72 prolongs along the direction (direction parallel with the X-axis in Fig. 1) for being parallel to the 1st direction It stretches, and there are the multiple 2nd opening 72a being intermittently formed along the direction for being parallel to the 1st direction.2nd nozzle 72 will be from setting The nitrogen for changing the supply of gas supply source 78 is released from the 2nd opening 72a.The 2nd nozzle 72 of EFEM50 configures in the 2nd Room 64, because Nitrogen is discarded to the 2nd Room 64 by this 2nd nozzle 72.2nd nozzle 72 is preferably configured in the courtyard portion of the 2nd Room 64, or prepares It, can also be in the 2nd Room 64 near the 1st interconnecting part 58 for connecting the 2nd Room 64 and the 1st Room 54.
2nd nozzle 72 is formed in the parallel direction in the 1st direction, along the formation length L3 of the 2nd opening 72a of the direction (to the length of the opening 72a other end of the other side the 2nd since one end of the opening 72a of side the 2nd) does not limit.2nd opening 72a Formation length L3 from the viewpoint of being evenly supplied nitrogen into the 2nd Room 64, preferably in the 2nd Room 64 shown in Fig. 1 the 2nd 1/3rd or more of the length L4 along the direction for being parallel to the 1st direction of forward area 64a, further preferably half with On.In addition, the formation length L3 of the 2nd opening 72a can be identical as the 1st opening formation length L1 of 71a.In addition, the 2nd nozzle 72 also can have the 2nd opening of the fine crack shape being continuously formed along the direction for being parallel to the 1st direction, at this point, the 2nd opening Along the formation length L3 in the direction for being parallel to the 1st direction to come from the length of one end to the other end of the 2nd opening of fine crack shape It indicates.
As shown in Fig. 2, FEFM50 has the 3rd nozzle 73 for being equally configured at the 1st Room 54 with the 1st nozzle 71, with the 2nd spray Mouth 72 is equally configured at the 4th nozzle 74 of the 2nd Room 64.3rd nozzle 73 with it is parallel with the 1st nozzle 71 and be located at mutually level side Furthermore formula vacates defined interval on the direction (direction for being parallel to Y-axis) perpendicular to the 1st direction relative to the 1st nozzle 71 L5 and configure.3rd nozzle 73 extends along the direction (direction parallel with X-axis in Fig. 1) for being parallel to the 1st direction, and has edge The parallel direction in the 1st direction be intermittently formed it is multiple 3 opening 73a.
3rd nozzle 73 is formed along the direction for being parallel to the 1st direction, and the formation along the opening of the direction the 3rd 73a is long Degree is identical as the 1st opening formation length L1 of 71a.In addition, although the interval L5 of the 1st nozzle 71 and the 3rd nozzle 73 is without special It limits, from the viewpoint of being evenly supplied nitrogen to EFEM50, the 1st direction preferably shown in FIG. 1 along the 1st Room 54 is hung down It is more than the one third of the length in straight direction (direction for being parallel to Y-axis), more preferably more than half.In addition, being opened for the 3rd The shape of mouth 73a, or the fine crack shape being formed continuously along the direction for being parallel to the 1st direction.
As shown in Fig. 2, the 4th nozzle 74 by it is parallel with the 2nd nozzle 72 and be located at sustained height in a manner of, in addition, relative to 2nd nozzle 72 is spaced L6 as defined in separating on the direction (direction for being parallel to Y-axis) perpendicular to the direction for being parallel to the 1st direction And it configures.4th nozzle 74 along be parallel to the 1st direction direction (direction of X-axis is parallel in Fig. 1) extend, and have along It is parallel to multiple 4th opening 74a that the direction in the 1st direction is intermittently formed.
4th nozzle 74 is formed along the direction for being parallel to the 1st direction, along the formation of the opening of the direction the 4th 74a Length is identical as the 2nd opening formation length L2 of 72a.In addition, although the interval L6 between the 2nd nozzle 72 and the 4th nozzle 74 does not have There is restriction, but from the viewpoint of being evenly supplied nitrogen to EFEM50, preferably along the 2nd in the 2nd Room 64 shown in FIG. 1 The one third of the length in the direction (direction for being parallel to Y-axis) perpendicular to the direction for being parallel to the 1st direction of forward area 64a More than, more preferably more than half.In addition, being also possible to the shape of the 4th opening 74a along being parallel to the 1st direction The fine crack shape that direction is formed continuously.
As shown in Figure 1, the 1st Room 54 is connect with the top of the 2nd Room 64, the 1st Room 54 is configured at the surface of the 2nd Room 64.1st There is no particular limitation for the width of room 54, such as in the example shown in Fig. 2, and the length ratio of the short transverse of the 1st Room 54 is located at 2nd Room 64 of lower section it is short, the projected area from the top of the 1st Room 54 is identical as underlying 2nd Room 64.By making the 1st The space of room 54 is narrower than the space of the 2nd Room 64, so as to effectively convey substitution gas or dry sky from filter 62 Gas, and becoming large-sized for EFEM50 can be prevented.
As shown in Figure 1, the 2nd Room 64 is connect with the lower section of the 1st Room 54.2nd Room 64 has the oxygen concentration of the 2nd Room 64 of measurement Oxymeter 66.Furthermore other detectors such as pressure gauge can also be configured in the 2nd Room 64, it can when can also have a maintenance et al. The opening door (not shown) of disengaging.
As shown in Figure 1, the 2nd Room 64 has the 2nd forward area 64a as the region for carrying wafer, and by backwind tube The 2nd return area 64b constituted.2nd forward area 64a and the 2nd return area 64b in the horizontal direction and is configured, and is all connected It is connected to 54 lower section of Room the 1st.2nd forward area 64a and the 2nd return area 64b are prolonged downwards from the courtyard part of the 2nd Room 64 The midfeather 69 stretched separates.The lower section of midfeather 69 is formed with the phase of the 2nd forward area 64a and the 2nd return area 64b of connection The 67, the 2nd return area 64b of lower part interconnecting part of mutual lower part is opposite with the 2nd forward area 64a, connects via lower part interconnecting part 67 It is logical.
When the formation of circulating current as shown in Figure 1, down current is generated in the 2nd forward area 64a of the 2nd Room 64, the Ascending air is generated in 2 return area 64b.In addition, before the 1st Room 54 has the 1st connect with the top of the 2nd forward area 64a Recessed region 54a and the 1st return area 54b being connect with the 2nd top return area 64b.As shown in figure 1 shown in arrow 90, circulating air Stream is according to the 1st forward area 54a, the 2nd forward area 64a, the 2nd return area 64b, the 1st return area 54b, the 1st forward area 54a ... sequence, recycled between the 1st Room 54 and the 2nd Room 64.
As shown in Figure 1, the 1st Room 54 and the 2nd Room 64 are connected via the 1st interconnecting part 58 and the 2nd interconnecting part 65.1st interconnecting part In 58, in circulating current formation, the air-flow (down current) from the 1st Room 54 towards the 2nd Room 64 is generated.1st interconnecting part 58 In, setting forms the gas flow forming part 60 and filter 62 of circulating current between the 1st Room 54 and the 2nd Room 64.
Gas flow forming part 60 has blowing fan 61 and drives the driving portion of blowing fan 61, by control not shown in the figure The control in portion rotates blowing fan 61, and circulating current as shown in Figure 1 is formed inside EFEM50.Gas flow forming part 60 by 2nd forward area 64a of the 2nd Room 64 forms distinguished and admirable downwards, so as to reduce the particle of the suspension in the 2nd Room 64, improves the 2nd The cleannes of the 2nd forward area 64a in room 64.It is further returned from the 2nd of the 2nd Room 64 the in addition, gas flow forming part 60 is formed Region 64b rises, and is returned in the 1st Room 54 by the 2nd interconnecting part 65 later, further passes through the 1st return area of the 1st Room 54 54b and the 1st forward area 54a return to the circulating current of the 1st interconnecting part 58, thus be able to suppress in usual operating supplement to The consumption of the nitrogen of EFEM50.
Filter 62 passes through the particle or defined ingredient for removing and containing in the gas in the 1st Room 54 and the 2nd Room 64, thus It can be improved the cleannes in EFEM50.As filter 62, such as it can enumerate and be combined with particle removal filter and chemistry The filter of filter, but be not particularly limited.The gas flow forming part 60 and filter 62 having in 1st interconnecting part 58 can be gas The blowing fan 61 and filter 62 for flowing forming portion 60 are integrally formed fan filter unit (FFU), can also be with gas flow forming part 60 It is the individual of difference with filter 62.In the case where gas flow forming part 60 and filter 62 are the individuals of difference, such as air-flow The blowing fan 61 of forming portion 60 can be configured at the courtyard portion etc. of the 1st Room 54.
In EFEM50, gas flow forming part 60 and filter 62 are juxtaposed on the 1st interconnecting part 58.Further, it is configured at the 1st The 1st nozzle 71 in room 54 and the 2nd spray nozzle part 72 of the 2nd Room 64 is configured to clamp gas flow forming part 60 and mistake from up and down direction The mode of filter 62 configures.Released by configuring clamping gas flow forming part 60 and filter 62 ands up and down nitrogen nozzle 71, 72, so that the deviation of nitrogen gas concn caused by generating the aeration resistance by filter 62 is difficult to, in addition, by being full of with nitrogen The periphery of filter 62, so as to prevent the pollution of filter.
As shown in Figure 1, in the formation of circulating current, being generated from the 2nd Room 64 to the 1st Room 54 in the 2nd interconnecting part 65 Air-flow (ascending air).The aeration status change for changing the aeration status of the 2nd interconnecting part 65 can also be set in the 2nd interconnecting part 65 Portion (not shown).For example, have can be via the 2nd interconnecting part 65 from the 2nd Room 64 to the with gas for aeration status changing unit The mobile state in 1 Room 54 and gas cannot connect via the state switching the 2nd mobile from the 2nd Room 64 to the 1st Room 54 of the 2nd interconnecting part 65 The valve of the aeration status in logical portion 65.
The gas of 1st Room 54 or the 2nd Room 64 is discharged gas discharge section 68.Gas discharge section 68 shown in FIG. 1 is connected in 2nd return area 64b of the 2nd Room 64, the gas of the 2nd Room 64 is discharged from the 2nd Room 64.Nitrogen is imported from gas discharge section 68 Before be present in air in EFEM50 or imported by the 1st~the 4th nozzle 71~74 in EFEM50 nitrogen or maintenance when The discharges such as the air in the factory in EFEM50 are flowed into except open door.In the formation of circulating current as shown in Figure 1, It can also stop that gas is discharged from gas discharge section 68, in addition it is also possible to be equivalent to from the discharge of gas discharge section 68 from the 1st~the The gas of the supply amount of the gas of 4 nozzles 71~74.
Gas discharge section 68 to the link position of the 2nd Room 64 be than the 2nd opening 72a and the 4th low position opening 74a. In EFEM50, the gas of the 2nd Room 64 is discharged from the gas discharge section 68 for being located at lower position.However, gas discharge section 68 can also be with It is connect near the 2nd interconnecting part 65 with the 2nd Room 64 or the 1st Room 54.In addition, the gas discharge section 68 in present embodiment is It is also possible to that there are air-supply means as gas discharge section 68 without the natural exhaust gear of the air-supply means of similar fan Ejecting mechanism.
Fig. 6 is the flow chart for indicating an example of gas displacement method of EFEM50 shown in FIG. 1.In step S001 In, start a series of gas displacement that Fig. 6 is applied.The gas displacement of EFEM50 is for example in the usual operating for starting EFEM50 Before or after the end of the maintenance of EFEM50, carried out before the usual operating for opening EFEM50 again.Shown in Fig. 2 Before the gas displacement method of EFEM50 starts, the 1st Room 54 of EFEM50 and the 2nd Room 64 are the state being full of with air.
In step S002 shown in Fig. 6, it is adjusted between the 1st Room 54 and the 2nd Room 64 shown in Fig. 1 and forms circulation The air-flow set-up procedure of the driving of the gas flow forming part 60 of air-flow.Specifically, air-flow shape is stopped by control unit (not shown) At the driving in portion 60, so that the rotation of the Air Blast fan 61 of gas flow forming part 60 stops, stopping is followed by what Air Blast fan 61 was formed Ring air-flow.
In step S003 shown in Fig. 6, the 1st nozzle 71 shown in FIG. 1 is begun to use to release the of nitrogen in EFEM50 1 is released step and is released the 2nd releasing step of nitrogen in EFEM50 using the 2nd nozzle 72.1st releases step will be from displacement The nitrogen that gas supply source 78 supplies is discarded to the 1st Room 54 from the 1st opening 71a.In addition, the 1st releases in step, not only from the 1st 1st opening 71a of nozzle 71 releases nitrogen, and nitrogen is also discarded to the 1st from the 3rd opening 73a of the 3rd nozzle 73 (referring to Fig. 2) Room 54.
In addition, the 2nd releasing step will be discarded to Room the 2nd from the nitrogen that substitution gas supply source 78 supplies from the 2nd opening 72a 64.In addition, the 2nd releases in step, nitrogen not only is released from the 2nd opening 72a of the 2nd nozzle 72, also from the 74 (reference of the 4th nozzle Nitrogen is discarded to the 2nd Room 64 by the 4th opening 74a Fig. 2).
It in gas displacement method shown in fig. 6, while carrying out the 1st and releasing step and the 2nd releasing step, the 1st releases step It can also start or terminate with staggering time with the 2nd releasing step, or can also intermittently be carried out with either party.
In step S004 shown in fig. 6, start the discharge step that the gas of the 2nd Room 64 is discharged from the 2nd Room 64.Step is discharged By the 1st and the 2nd releasing step beginning nitrogen is imported into EFEM50, while a part of the gas in EFEM50 flow out to Gas discharge section 68, so that the 1st and the 2nd releasing step linkage starts.In addition, being connected to the 1st Room 54 in gas discharge section 68 In EFEM, gas is released from the 1st Room 54 in discharge step.
In step S005 shown in fig. 6, using the oxymeter 66 of the 2nd Room 64, measure (the 2nd Room 64) in EFEM50 Oxygen concentration, judges whether the oxygen concentration in EFEM50 reaches specified value or less.Oxygen in step S005, in the EFEM50 of measurement When concentration is more than specified value, continues the 1st and the 2nd and release step.In contrast, in step S005, in the EFEM50 detected Oxygen concentration lower than in the case where specified value, entering step S006, and stop the 1st and the 2nd and release step.
In step S006 shown in fig. 6, stops at the 1st and the 2nd started in step S003 and release step.In step In S006, the releasing of the wholly off nitrogen from 1st~the 4th opening 71a~74a as depicted in figs. 1 and 2, thus stop to The releasing of nitrogen in EFEM50.But be not the releasing for stopping nitrogen completely as described above in step S006, it can also reduce From the discharging amount of the nitrogen of the 1st~the 4th opening 71a~74a.In this case, can continue from the 1st~the 4th nozzle 71a~ A part of nozzle in 74a releases nitrogen, and stops releasing nitrogen from the nozzle of other a part, in addition it is also possible to which whole subtract The discharging amount of few nitrogen from the 1st~the 4th opening 71a~74a.
In step S007 shown in fig. 6, stop the discharge step started in step S004.In step S006, stop completely Only in the case where the releasing of nitrogen, preferably also stops the gas discharge section 68 shown in Fig. 1 completely and gas is discharged.But in step In rapid S006, in the case where reducing discharging amount (the measuring per unit time) of the nitrogen from the 1st~the 4th opening 71a~74a, The discharge rate (per unit time) from gas discharge section 68 can also be reduced in step S007.
In step S008 shown in fig. 6, start shape between (re-starting) the 1st Room 54 and the 2nd Room 64 shown in Fig. 1 At the driving of the gas flow forming part 60 of circulating current.Specifically, start and (re-start) air-flow by control unit (not shown) The driving of forming portion 60 forms circulating current by blowing fan 61 so that the blowing fan 61 of gas flow forming part 60 is rotated.
In step S009, EFEM50 terminates a series of gas displacement.After gas displacement shown in fig. 6 stops, EFEM50 It is able to carry out the usual operating of conveying that wafer is carried out in the 2nd Room 64 etc..
As shown above, shown in FIG. 1 there is the 1st nozzle 71, the EFEM50 of the 2nd nozzle 72 can be from 71 and of the 1st nozzle The both sides of 2nd nozzle 72 release substitution gas.In addition, the 1st and the 2nd opening edge 71a, 72a with the 1st and the 2nd nozzle 71,72 The 1st direction or be parallel to the direction in the 1st direction discontinuously or be continuously formed, therefore it is such with nozzle 71,72 EFEM50 is capable of opening 71a, 72a of a wide range of interior configuration discharge substitution gas in EFEM50, and can be than the past more Add the substitution gas concentration in the 1st Room 54 and the 2nd Room 64 impartial and that efficiently improve EFEM50.In addition, by the 1st spray Except mouth 71 and the 2nd nozzle 72, and with the 3rd nozzle 73 and the 4th nozzle 74, the 1st Room 54 of EFEM50 can be efficiently improved With the concentration of the nitrogen in the 2nd Room 64, shorten the time required for gas displacement.
In addition, EFEM50, which not only has, releases the 1st nozzle 71 of substitution gas in the 1st Room 54, also has and put in the 2nd Room 64 2nd nozzle 72 of substitution gas out, therefore compared to can equably improve in the 1st Room 54 and the 2nd Room 64 of EFEM50 in the past Substitution gas concentration.For example, in EFEM50 shown in Fig. 1, even from the 1st interconnecting part 58 of setting filter 62 Air-flow is difficult to the corner portion etc. of the 2nd Room 64 of direction, is also able to use the 2nd nozzle and is efficiently directed into nitrogen.Therefore, EFEM50 The nitrogen gas concn of the 2nd Room 64 can be efficiently improved compared to the past, and the time needed for shortening gas displacement.
In addition, in EFEM50, in method of replacing as shown in FIG. 6, by stop the driving of gas flow forming part 60 into The discharge of row nitrogen, thus compared with the case where carrying out the releasing of nitrogen while continuing the driving of gas flow forming part 60, energy Enough nitrogen gas concns improved in the short time in the 2nd Room 64.Fig. 7 is to show that the driving for stopping gas flow forming part 60 in EFEM50 comes The case where carrying out gas displacement, and continue the driving of gas flow forming part 60 and released to carry out the gas in the case where gas displacement The figure of the reduced relationship of time and the oxygen concentration in EFEM50.
In Fig. 7, the figure that dotted line (discharging amount 300L/ minutes) and fine dotted line (discharging amount 600L/ minutes) indicate illustrate after The driving of continuous gas flow forming part 60 carries out the result of gas displacement.In contrast, solid line (discharging amount 300L/ minutes) and fine line The figure that (discharge rate 600L/ minutes) indicates illustrates the driving of stopping gas flow forming part 60 to carry out the result of gas displacement.Root According to Fig. 7 it is found that in the gas displacement by EFEM50, if the gas discharging amount from nozzle is identical, stop gas flow forming part The method that 60 driving carries out gas displacement can faster reach the normal concentration that oxygen concentration is lower than 1%.This is considered due to such as The driving that fruit continues gas flow forming part 60 carries out the releasing of gas, then the air comprising imported nitrogen and oxygen is stirred, oxygen Efficiency is sent to reduce, in contrast, this can be prevented in the case where the driving for stopping gas flow forming part 60 carries out gas displacement The problem of sample, and can be effectively discharged out containing aerobic air.
In addition, EFEM50 has multiple 1st~the 4th nozzles 71~74, and being capable of a wide range of interior releasing in EFEM50 Nitrogen, so even the driving for stopping gas flow forming part 60, which carries out gas displacement, also can equably reach EFEM50 for nitrogen It is interior, and gas displacement can be effectively performed.
As described above, embodiment is shown to illustrate the present invention, but the present invention is not limited only to above-mentioned embodiment, shows It so also include other a large amount of embodiments and variation.For example, Fig. 3 (a) and Fig. 3 (b) are indicated in the 2nd embodiment 1st nozzle and the 271st and the 2nd nozzle 272 and the piping 275,375 for connecting it used in EFEM, with embodiment institute The Fig. 2 (a) and Fig. 2 (b) for the EFEM50 being related to are corresponding.
1st nozzle 271 possessed by EFEM involved in 2nd embodiment has along two sides as horizontal direction The 1st opening 271a of multiple (4 or more) for being arranged to i.e. X-axis and Y direction in planar.In addition, the 2nd nozzle 272 and the 1st sprays Mouth 271 is same, have along as horizontal direction 2 direction, that is, X-axis and Y direction in planar arrangement it is multiple (4 with On) the 2nd opening 272a.The 1st Room 54 that 1st nozzle 271 is disposed above, the 2nd Room 64 arranged below of the 2nd nozzle 272.
Connect the piping 275,375 of the 1st nozzle 271 and the 2nd nozzle 272 and substitution gas supply source 78 (referring to Fig.1) Shape be not particularly limited, 275 can be piped as shown in Fig. 3 (a), have and the 1st nozzle 271 and 272 phase of the 2nd nozzle The width of same Y direction, can also be piped 375 as shown in Fig. 3 (b), have than the 1st nozzle 271 and the 2nd nozzle 272 more The width of narrow Y direction.EFEM with such 1st nozzle 271 and the 2nd nozzle 272 has and the 1st embodiment The identical effect of EFEM50.
Fig. 4 is the skeleton diagram of EFEM450 involved in third embodiment of the present invention, and Fig. 5 is to indicate to be wrapped in EFEM450 The skeleton diagram of the 1st nozzle 71 and the 2nd nozzle 472 contained.In EFEM450, the 1st nozzle 71 and the 2nd nozzle 472 are all configured at 1st Room 54 has the nozzle for releasing nitrogen, at this unlike the 2nd nozzle 72 shown in FIG. 1 or the 4th nozzle 74 in the 2nd Room 64 A little upper different from EFEM50, other aspects are all same as EFEM50.In EFEM450, the difference with EFEM50 is only illustrated Place marks symbol identical with Fig. 1 and Fig. 2 and omits the description for the part common with EFEM50.
As shown in figure 5, the 2nd nozzle 472 of EFEM450 (is parallel to the X-axis in Fig. 1 along the direction for being parallel to the 1st direction Direction) extend, and have along the direction for being parallel to the 1st direction be intermittently formed it is multiple 2 opening 472a.1st nozzle 71 and the 2nd nozzle 472 is connect via piping 475 with substitution gas supply source 78, and the 2nd nozzle 472 and the 1st nozzle 71 are same, It will be released from the nitrogen that substitution gas supply source 78 supplies from the 2nd opening 472a.2nd nozzle 472 is to be located at and the 1st nozzle 71 Mutually level mode is configured at the 1st Room 54, and nitrogen is discarded to the 1st Room 54.
EFEM450 involved in 3rd embodiment is same as EFEM50 involved in the 1st embodiment, can also be The opening 71,472 of a wide range of interior configuration discharge substitution gas in the 1st Room 54 in EFEM450, and can be compared to the past more Add the concentration for uniformly and efficiently improving the substitution gas in EFEM450.
It can be into addition, the gas displacement illustrated in embodiment, when being not only to re-start normal operation after maintenance Row is wanted to carry out in the usually operating such as the case where improving the nitrogen gas concn in the 2nd Room 64 in usual operating.

Claims (7)

1. a kind of EFEM, which is characterized in that
It includes
Room 1st can import substitution gas；
Room 2nd, the lower section of the Room the 1st is connected to via the 1st interconnecting part and the 2nd interconnecting part, and the 1st interconnecting part is set It is equipped with filter and flows into above-mentioned substitution gas from the Room the 1st in circulating current formation, the 2nd interconnecting part is followed described The substitution gas is flowed out to the Room the 1st when the formation of ring air-flow；
Gas flow forming part forms the circulating current between the Room the 1st and Room the 2nd；
Gas is discharged from the Room the 1st or the Room the 2nd in gas discharge section；
1st nozzle is configured at the Room the 1st, has at least along the 1st direction as horizontal direction is interrupted or continuous landform At the 1st opening, and the substitution gas supplied from substitution gas supply source is open from the described 1st and is put to the Room the 1st Out；
2nd nozzle has along being parallel to the direction in the 1st direction discontinuously or the 2nd opening that is continuously formed, and will be from The substitution gas of substitution gas supply source supply is released from the 2nd opening.
2. the EFEM recorded such as claim 1, which is characterized in that
2nd nozzle is configured at the Room the 2nd, and the substitution gas is discarded to the Room the 2nd.
3. the EFEM recorded such as claim 2, which is characterized in that
The gas flow forming part is set side by side in the 1st interconnecting part with the filter,
It is configured at the 1st nozzle of the Room the 1st and is configured at the 2nd nozzle of the Room the 2nd to press from both sides from up and down direction The mode of the gas flow forming part and the filter and configure.
4. the EFEM recorded such as claim 1, which is characterized in that
2nd nozzle by with the 1st nozzle be located at it is mutually level in a manner of be configured at the Room the 1st, and by the displacement Gas is discarded to the Room the 1st.
5. a kind of method for importing substitution gas to EFEM, wherein
It includes
1st releases step, uses and is configured at Room the 1st and has at least along discontinuously or continuous as the 1st direction of horizontal direction 1st nozzle of the 1st opening that ground is formed will be discarded to from the substitution gas that substitution gas supply source supplies from the 1st opening The Room 1st；
2nd releases step, using with along the 2nd opening that the direction for being parallel to the 1st direction is interrupted or is continuously formed The 2nd nozzle, by the substitution gas supplied from substitution gas supply source from it is described 2nd opening release；
Step is discharged, via being provided with filter and from the Room the 1st flow into the substitution gas when circulating current is formed 1st interconnecting part and the 2nd interconnecting part for flowing out the substitution gas to the Room the 1st in circulating current formation, from even It is connected to Room the 2nd or the Room the 1st discharge gas of the lower section of the Room the 1st；With
Air-flow set-up procedure, adjustment form the gas flow forming part of the circulating current between the Room the 1st and the Room the 2nd Driving.
6. the method for importing substitution gas to EFEM recorded such as claim 5, wherein
The 1st releasing step and the 2nd releasing step stopped the gas flow forming part in the air-flow set-up procedure Driving in the state of carry out.
7. the method for importing substitution gas to EFEM recorded such as claim 5 or 6, wherein
The substitution gas is expelled to the Room the 2nd in the Room the 2nd, the 2nd releasing step by the 2nd nozzle configuration.
CN201810550223.3A 2017-05-31 2018-05-31 EFEM and method for introducing displacement gas into EFEM Active CN108987319B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-108662 2017-05-31
JP2017108662A JP6930224B2 (en) 2017-05-31 2017-05-31 Method of introducing replacement gas into EFEM and EFEM

Publications (2)

Publication Number Publication Date
CN108987319A true CN108987319A (en) 2018-12-11
CN108987319B CN108987319B (en) 2023-08-15

Family

ID=64458864

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810550223.3A Active CN108987319B (en) 2017-05-31 2018-05-31 EFEM and method for introducing displacement gas into EFEM

Country Status (5)

Country Link
US (1) US11145529B2 (en)
JP (1) JP6930224B2 (en)
KR (1) KR102164687B1 (en)
CN (1) CN108987319B (en)
TW (1) TWI673765B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524776A (en) * 2020-04-30 2020-08-11 北京北方华创微电子装备有限公司 Front-end module, control method thereof and semiconductor processing equipment

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102171905B1 (en) * 2019-04-10 2020-10-30 이창은 An EFEM Having Improved Pollution Prevention
KR102159270B1 (en) * 2019-04-10 2020-09-23 이창은 An EFEM Having Improved Pollution Prevention

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015165604A (en) * 2015-06-26 2015-09-17 Tdk株式会社 purge nozzle
US20170125272A1 (en) * 2015-10-12 2017-05-04 Lam Research Corporation Wafer transfer microclimate techniques and apparatuses, including horizontal slot implementations and/or travelling showerheads
US20180040493A1 (en) * 2015-02-27 2018-02-08 Sinfonia Technology Co., Ltd. Transfer chamber

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2989063B2 (en) * 1991-12-12 1999-12-13 キヤノン株式会社 Thin film forming apparatus and thin film forming method
JP3402713B2 (en) * 1993-12-10 2003-05-06 東京エレクトロン株式会社 Heat treatment equipment
JPH08335572A (en) * 1995-06-07 1996-12-17 Hitachi Ltd Device for production of semiconductor
JP3406887B2 (en) 2000-03-24 2003-05-19 三菱電機ビルテクノサービス株式会社 Filter cleaning equipment
KR100562500B1 (en) 2003-02-25 2006-03-21 삼성전자주식회사 System and method for transferring substrates
KR100929817B1 (en) * 2007-10-23 2009-12-07 세메스 주식회사 Substrate Processing Apparatus and Manufacturing Method of Substrate Processing Apparatus
JP5190279B2 (en) * 2008-02-19 2013-04-24 東京エレクトロン株式会社 Substrate processing equipment
JP5307507B2 (en) 2008-10-31 2013-10-02 高砂熱学工業株式会社 Locally sealed cleaning device
JP5641556B2 (en) * 2009-09-30 2014-12-17 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
US20110116059A1 (en) * 2009-11-12 2011-05-19 Nikon Corporation Filter box, exposure apparatus, and method for producing device
JP2014038888A (en) * 2012-08-10 2014-02-27 Hitachi High-Tech Control Systems Corp Mini-environment device, and inner atmosphere replacement method of the same
JP6198043B2 (en) * 2013-06-06 2017-09-20 Tdk株式会社 Load port unit and EFEM system
US9272315B2 (en) * 2013-10-11 2016-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for controlling gas flow in enclosure
CN204880077U (en) 2015-05-20 2015-12-16 谢祚祥 Hybrid steam extraction recovery unit
KR101785330B1 (en) * 2015-05-29 2017-10-18 국제엘렉트릭코리아 주식회사 Substrate treating apparatus of furnace type, cluster equipment for treating substrate, and substrate processing method
TWI788061B (en) * 2015-08-04 2022-12-21 日商昕芙旎雅股份有限公司 Door opening and closing system and load port with door opening and closing system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180040493A1 (en) * 2015-02-27 2018-02-08 Sinfonia Technology Co., Ltd. Transfer chamber
JP2015165604A (en) * 2015-06-26 2015-09-17 Tdk株式会社 purge nozzle
US20170125272A1 (en) * 2015-10-12 2017-05-04 Lam Research Corporation Wafer transfer microclimate techniques and apparatuses, including horizontal slot implementations and/or travelling showerheads

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524776A (en) * 2020-04-30 2020-08-11 北京北方华创微电子装备有限公司 Front-end module, control method thereof and semiconductor processing equipment
CN111524776B (en) * 2020-04-30 2023-10-13 北京北方华创微电子装备有限公司 Front-end module, control method thereof and semiconductor processing equipment

Also Published As

Publication number Publication date
KR20180131492A (en) 2018-12-10
JP6930224B2 (en) 2021-09-01
US20180350647A1 (en) 2018-12-06
JP2018206875A (en) 2018-12-27
TW201903836A (en) 2019-01-16
TWI673765B (en) 2019-10-01
KR102164687B1 (en) 2020-10-12
CN108987319B (en) 2023-08-15
US11145529B2 (en) 2021-10-12

Similar Documents

Publication Publication Date Title
CN108987319A (en) EFEM and the method for importing substitution gas to EFEM
KR101828103B1 (en) Substrate processing apparatus, substrate processing method and non-transitory computer-readable storage medium
TWI541079B (en) Nozzle cleaning device, nozzle cleaning method, and substrate processing device
CN106876309A (en) Front equipment end module
CN106876310A (en) The control method of wafer trucking department and load terminal oral area in EFEM
CN103187339B (en) Substrate board treatment and substrate processing method using same
CN107690561A (en) Processing equipment and the method for handling workpiece
CN107871692A (en) Reclaim piping cleaning method and substrate board treatment
TWI736934B (en) Substrate processing apparatus and substrate processing method
CN108028193A (en) Substrate board treatment and substrate processing method using same
KR20100018456A (en) Liquid treatment apparatus
CN109216229A (en) Substrate board treatment and substrate processing method using same
CN107017190A (en) Load port device and clean gas introduction method into the container of load port device
JP6045840B2 (en) Substrate processing equipment
CN206337281U (en) Cell culture incubator
CN106701574A (en) Cell culture operation integrated system and working method thereof
CN106635792A (en) Cell culture box and control method
JP2008133975A (en) Exhaust recirculation type grain dryer
CN112038257B (en) Cleaning equipment
KR101439436B1 (en) Dual hopper system
CN116921374A (en) Cleaning device, wafer processing equipment and cleaning method thereof
CN109979853A (en) Standby port and substrate board treatment with standby port
CN106643023A (en) Mixing device for agricultural pesticide production
CN206529484U (en) Cell culture operations integral system
CN205536919U (en) Medicine bottle heat sterilization stoving case

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant