CN108975904A - A kind of high-densit ITO target of strong ultrasonic wave added method preparation even tissue - Google Patents

A kind of high-densit ITO target of strong ultrasonic wave added method preparation even tissue Download PDF

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Publication number
CN108975904A
CN108975904A CN201810729836.3A CN201810729836A CN108975904A CN 108975904 A CN108975904 A CN 108975904A CN 201810729836 A CN201810729836 A CN 201810729836A CN 108975904 A CN108975904 A CN 108975904A
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Prior art keywords
ito
pressure
ito target
densit
particle
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CN201810729836.3A
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黎军军
刘碧桃
关有为
闫恒庆
阮海波
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Chongqing University of Arts and Sciences
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Chongqing University of Arts and Sciences
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Priority to CN201810729836.3A priority Critical patent/CN108975904A/en
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28BSHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B3/00Producing shaped articles from the material by using presses; Presses specially adapted therefor
    • B28B3/003Pressing by means acting upon the material via flexible mould wall parts, e.g. by means of inflatable cores, isostatic presses
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/602Making the green bodies or pre-forms by moulding

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a kind of preparation methods of the high-densit ITO target of even tissue, and the ITO (In2O3:SnO2=9:1, wt%) of 20~70nm of partial size, purity >=99.99% are passed through dry granulating machine, the fluffy particle of 15-20um or so size is made;The fluffy ITO particle by granulation is loaded in a mold again and is placed in calm pressure, the pressure of hydraulic press is adjusted, mould inside pressure is respectively set to 400MPa, 600MPa, 800MPa, 1000MPa, 1200MPa and 1500MPa;Introduce the biscuit sample that molding consistency under power P=3Kw ultrasonic vibration and calm pressure double action is up to 62.2 ± 0.2%.

Description

A kind of high-densit ITO target of strong ultrasonic wave added method preparation even tissue
Technical field
The present invention relates to a kind of preparations of ITO material, and in particular to a kind of system of the high-densit ITO target of even tissue It is standby.
Background technique
ITO refers to the abbreviation of Indium and Tin oxide.Ito thin film has to visible transparent and good electric conductivity, Its transmitance >=95% to visible light, to absorptivity >=85% of ultraviolet light, to reflectivity >=70% of infrared ray, to microwave Attenuation rate >=85%.Meanwhile the excellent machining performance of ito thin film, hardness height and wear-and corrosion-resistant, and be easy in acidic liquid In etch fine figure.Thus ito thin film shows (LCD), electric color in thin film transistor (TFT) (TFT), flat panel Liquid Crystal in recent years Layer window, the active and passive constituent element in photovoltaic device and infra-red radiation reflection heat mirror films etc. obtain extensively Using being the particularly important electronic functional material of current era of knowledge-driven economy information industry.
ITO target is one of production extremely important material of transparent conductive film.ITO target is mainly splashed by magnetic control ITO target is sputtered on glass or other substrates to form ito thin film by jet device.The theoretical density of ITO target is 7.15g/ Cm3, good finished product ITO target should have >=99% relative density, and such ITO target has low resistivity, higher Thermal conductivity and higher mechanical strength.The preparation method of high-purity high-density degree ITO target comes with some shortcomings at present, for example, heat etc. Static pressure equipment is expensive, operating cost is higher, causes production cost higher;The large-size ITO target material of hot pressing sintering method preparation is easy Cracking, and the production cost is very high;The poor dispersion of obtained ITO target powder-product, easily generation agglomeration;Ceramics, Density reaches 95%, but since sintering temperature is higher, material grains are grown up obviously, and performance is by a degree of influence.
Obtained ITO target mobility is bad, and the compactness of final ITO target is caused not reach requirement.
Summary of the invention
The object of the invention provides a kind of preparation method for the ITO target that microstructure is uniform, crystal grain is tiny.
The object of the invention is achieved through the following technical solutions:
A kind of preparation method of the high-densit ITO target of even tissue, it is characterised in that:
The ITO (In2O3:SnO2=9:1, wt%) of 20~70nm of partial size, purity >=99.99% are passed through into dry granulation The fluffy particle of 15-20um or so size is made in machine.The fluffy ITO particle by granulation is loaded in a mold and placed again In calm pressure.Adjust hydraulic press pressure, by mould inside pressure be respectively set to 400MPa, 600MPa, 800MPa, 1000MPa, 1200MPa and 1500MPa.It introduces under power P=3Kw ultrasonic vibration and calm pressure double action and forms consistency Up to 62.2 ± 0.2% biscuit sample.Finally, 1550 DEG C at a temperature of sintering 2h be made.
The invention has the following beneficial effects:
Material density produced by the present invention is 99.3 ± 0.3%, the ITO target that microstructure is uniform, crystal grain is tiny.
Detailed description of the invention
Fig. 1: the calm pressure of difference introduces influence of the strong ultrasonic vibration to ITO forming of green body.
Fig. 2: the ITO target consistency curve of different time sintering.
Fig. 3: the microscopic appearance of the ITO target of different sintering times.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
A kind of preparation method of the high-densit ITO target of even tissue, by 20~70nm of partial size, purity >=99.99% ITO (In2O3:SnO2=9:1, wt%) passes through dry granulating machine, and the fluffy particle of 15-20um or so size is made.It again will be through The fluffy ITO particle for crossing granulation loads in a mold and is placed in calm pressure.The pressure for adjusting hydraulic press, by mould inside pressure It is respectively set to 400MPa, 600MPa, 800MPa, 1000MPa, 1200MPa and 1500MPa by force.It is super to introduce power P=3Kw The biscuit sample that molding consistency under pressure double action is up to 62.2 ± 0.2% is swung and cools down in acoustic shock.Finally, in 1550 DEG C of temperature The lower sintering 2h of degree is made.
As shown in Figure 1, as the consistency of the raising biscuit of pressure is also gradually increased, but increase trend and gradually weaken.Draw Enter after strong ultrasonic vibration under identical pressure, the consistency of biscuit significantly improves, and when pressure reaches 1000MPa, consistency is 62.2 ± 0.2%, continue to increase with pressure, the consistency rate of biscuit is very slow, therefore it is we that pressure, which is 1000MPa, The optimal pressure conditions of method.The influence that different time is sintered ITO target is calm to Pf=1000MPa to depress, if introduces Pw The ITO biscuit of=3Kw ultrasonic vibration production is sintered at 1550 DEG C, and the ITO target consistency of different time sintering is as schemed 2.Direct extruding is apparently higher than by high temperature sintering production ITO target consistency as shown in Fig. 2, introducing ultrasonic wave added molding biscuit Molding biscuit high temperature sintering makes ITO target.Ultrasonic wave added molding biscuit sample is introduced into 1550 DEG C of high temperature, is sintered 120min obtains highest consistency, reaches 99.3 ± 0.3%.And directly extrusion forming biscuit is sintered after 4h just in 1550 DEG C Obtain 96.2 ± 0.2% consistency.As shown in figure 3, being the calm pressure of pressure Pf=1000MPa, the shake of Pw=3Kw ultrasound is introduced The ITO biscuit for swinging production, in the microscopic appearance figure of the ITO target of 60min, 100min, 120min and 140min sintering.From figure It can be seen that ITO particle is in 1-2um or so in 60min.Consistency is not very good between particle, has obvious hole to occur, with After sintering time extends to 120min, have been combined very close between particle, hole and gap etc. disappear, and consistency reaches To 99.3 ± 0.3%.As sintering time continues to extend, particle continues to grow up, and when sintering time is 140min, particle is had reached 7-10um, target consistency is 99.3 ± 0.2%, without significant change.

Claims (2)

1. a kind of preparation method of the high-densit ITO target of even tissue, it is characterised in that:
20~70nm of partial size, the ITO (In2O3:SnO2=9:1, wt%) of purity >=99.99% are passed through into dry granulating machine, system At the fluffy particle of 15-20um or so size;The fluffy ITO particle by granulation is loaded in a mold and is placed in calm again Pressure, adjust the pressure of hydraulic press, by mould inside pressure be respectively set to 400MPa, 600MPa, 800MPa, 1000MPa, 1200MPa and 1500MPa;It introduces molding consistency under power P=3Kw ultrasonic vibration and calm pressure double action and is up to 62.2 ± 0.2% biscuit sample.
2. the preparation method of high-densit ITO target as described in claim 1, it is characterised in that: by the biscuit sample obtained Product 1550 DEG C at a temperature of sintering 2h be made.
CN201810729836.3A 2018-07-05 2018-07-05 A kind of high-densit ITO target of strong ultrasonic wave added method preparation even tissue Pending CN108975904A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112301252A (en) * 2020-09-16 2021-02-02 河南科技大学 Preparation method of nano copper-based composite material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102167597A (en) * 2010-12-20 2011-08-31 昆明理工大学 Method of preparing ITO target material by oxygen atmosphere pressureless sintering process
CN106977179A (en) * 2017-04-07 2017-07-25 中国船舶重工集团公司第七二五研究所 A kind of method that two steps multi-steps sintering method prepares high fine and close ITO target
CN107244911A (en) * 2017-01-13 2017-10-13 昆明理工大学 A kind of preparation method of ITO tubular targets
CN108002815A (en) * 2017-11-29 2018-05-08 株洲冶炼集团股份有限公司 A kind of preparation method of tubulose ITO target

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102167597A (en) * 2010-12-20 2011-08-31 昆明理工大学 Method of preparing ITO target material by oxygen atmosphere pressureless sintering process
CN107244911A (en) * 2017-01-13 2017-10-13 昆明理工大学 A kind of preparation method of ITO tubular targets
CN106977179A (en) * 2017-04-07 2017-07-25 中国船舶重工集团公司第七二五研究所 A kind of method that two steps multi-steps sintering method prepares high fine and close ITO target
CN108002815A (en) * 2017-11-29 2018-05-08 株洲冶炼集团股份有限公司 A kind of preparation method of tubulose ITO target

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张明杰等: "不同冷等静压压力对ITO靶材性能影响的研究", 《化工新型材料》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112301252A (en) * 2020-09-16 2021-02-02 河南科技大学 Preparation method of nano copper-based composite material

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