CN108964508A - A kind of T-type translation circuit and corresponding three-phase translation circuit - Google Patents
A kind of T-type translation circuit and corresponding three-phase translation circuit Download PDFInfo
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- CN108964508A CN108964508A CN201710361250.1A CN201710361250A CN108964508A CN 108964508 A CN108964508 A CN 108964508A CN 201710361250 A CN201710361250 A CN 201710361250A CN 108964508 A CN108964508 A CN 108964508A
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- switch device
- translation circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/66—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal
- H02M7/68—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters
- H02M7/72—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/79—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/797—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inverter Devices (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a kind of T-type translation circuits and corresponding three-phase translation circuit.In T-type translation circuit, by increasing an inductance, four diodes and two capacitors in the T-type translation circuit of the prior art, to make controllable switch device and diode component that can realize Sofe Switch, the power consumption of power device and diode component is reduced.Corresponding three-phase translation circuit equally also can be realized the Sofe Switch of controllable switch device and diode component, reduce the power consumption of power device and diode component.
Description
Technical field
The present invention relates to field of conversion of electrical energy, and in particular to a kind of T-type translation circuit.
Background technique
In the prior art, the translation circuit of T-type layout is widely used.The translation circuit of T-type layout generally comprises two
A vertically arranged controllable switch device and two controllable switch devices being laterally arranged；Two vertically arranged controllable switch devices
Part is connected in series, and one end connects positive bus-bar, and the other end connects negative busbar；Company between two vertically arranged controllable switch devices
Input/output terminal of the contact as translation circuit；Two controllable switch devices being laterally arranged are generally located on intermediate bridge arm,
One end of intermediate bridge arm is connected to input/output terminal, and the another of intermediate bridge arm is connected to middle line.Two controllable switches being laterally arranged
There are three types of device is general in the connection type on intermediate bridge arm, respectively as shown in Figure 1, Figure 2 and Figure 3.Fig. 1 is two laterally settings
The series connection reversely with each other of controllable switch device, and drain electrode or the connected situation of collector each other.Fig. 2 is two laterally settings
The series connection reversely with each other of controllable switch device, and the connected situation of source electrode or emitter each other.Fig. 3 is two laterally settings
Controllable switch device respectively connect situation about be connected in parallel after a diode again on intermediate bridge arm.In above 3 figures, controllably
Switching device includes the freewheeling diode that IGBT is managed and connect with the IGBT pipe inverse parallel.Three level of T-type in the prior art
Translation circuit is compared to double level-conversion circuits, with single IGBT pipe blocking voltage halves, harmonic wave is small, loss is low, high-efficient
Etc. advantages.
In three level-conversion circuit of T-type, the power consumption of each IGBT pipe can be divided into on-state power consumption, on-off power consumption, wherein leading to
Disconnected power consumption can separate logical stage power consumption and off-phases power consumption again.When working frequency is lower, on-state power consumption is main；But
When working frequency is higher, on-off power consumption then rises to main power consumption, wherein opening stage power dissipation ratio off-phases power consumption also
It is big.Therefore, in the case of higher operating frequencies, need to realize " Sofe Switch ", so-called " Sofe Switch " refers to controllable switch
Device can be realized zero voltage switch (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch (ZVZXCS), either
Current or voltage is risen by limited slope in make and break process.If cannot achieve Sofe Switch, occur the problem that
1, power device (controllable switch device) loss is big；And power device temperature is caused to rise, not only make working frequency
It can not improve, and the electric current of power device, voltage capacity are also unable to reach rating index, make power device can not be in specified item
It is run under part, to restrict the application of three-level topology；
2, power device is easily secondary breakdown；Under the conditions of inductive load, there are peak voltages when power device turns off；And
Under the conditions of capacitive load, there are peak currents when power device is opened；To easily lead to second breakdown, function is greatly endangered
The safe operation of rate device, so that needing to design biggish safety operation area (SOA)；
3, biggish EMI electromagnetic interference is generated；In the operation of high-frequency work state, the parasitic electricity of the interpolar of power device itself
Appearance is particularly important parameter.This interelectrode capacity can generate two kinds of unfavorable factors in the switching process of power device: (1) existing
When opening under high voltage, the energy storage of interpolar parasitic capacitance is absorbed and is dissipated by device itself, certainly will generate temperature rise, and frequency gets over high temperature
It rises more serious；(2) dv/dt can be coupled to output end when interelectrode capacity voltage is converted, and generate electromagnetic interference, keep system unstable
It is fixed.In addition, the stray inductance in interelectrode capacity and circuit can generate oscillation, interference system is worked normally；
4, cause circuit topology very sensitive to the parasitic parameter of power device；When Sofe Switch cannot achieve, Ke Nengcun
Lead directly to problem in upper and lower bridge arm, and due to cannot achieve Sofe Switch, power device there is also open time delay (dead time),
And at high frequencies, the influence for the deadband eliminating time to inverter performance, the corrective action taken make again be entirely
The design of system becomes complicated；
5, need to design absorbing circuit, absorbing circuit is used to limit dv/ when di/dt and the shutdown when power device is opened
Dt narrows down to dynamic switch track in the SOA of direct current safety zone, guarantees that power device can be safely operated, but absorbing circuit is not
Switching loss can be eliminated, and increases the design difficulty of entire converting means again, while can also result in energy regeneration process
Middle freewheeling diode Reverse recovery and interfering with each other for absorbing circuit cause biggish stresses of parts；
6, power device can generate noise pollution in HF switch, therefore will lead to translation circuit and filter to input, output
Wave device it is more demanding.
Based on above 6 problems, there is an urgent need to realize the Sofe Switch of three level-conversion circuit of T-type.
Summary of the invention
It is an object of the invention to solve the problems of the prior art, a kind of T-type translation circuit and corresponding three-phase are provided
Translation circuit to reduce the power consumption of power device and diode component, and solves so that power device is able to achieve Sofe Switch work
Certainly problems of the prior art.
To reach above-mentioned purpose, the present invention adopts the following technical scheme:
A kind of T-type translation circuit, including two vertically arranged controllable switch devices, two controllable switches being laterally arranged
Device, inductance, first diode, the second diode, third diode, the 4th diode, first capacitor and the second capacitor；It is described
Two vertically arranged controllable switch devices in series connections, one end connects positive bus-bar, and the other end connects negative busbar；Described two
Tie point between a vertically arranged controllable switch device is as input/output terminal；What described two were laterally arranged controllably opens
Device is closed to be located on intermediate bridge arm；One end of intermediate bridge arm is connected to input/output terminal, another inductance that is connected to of intermediate bridge arm
One end；The another of inductance is connected to middle line；In the controllable switch device that described two are laterally arranged, meet first condition or
The controllable switch device of two conditions is defined as the second controllable switch device, meets the controllable switch device of third condition or fourth condition
Part is defined as third controllable switch device；The first condition is that the source electrode of the controllable switch device or emitter are connected to electricity
Sense；The second condition is that the drain electrode of the controllable switch device or collector are connected to input/output terminal；The third condition
Input/output terminal is connected to for the source electrode or emitter of the controllable switch device；The fourth condition is the controllable switch device
Drain electrode or collector are connected to inductance；The first diode and the second diode concatenation, the cathode of first diode are connected to just
Bus, the anode of the second diode are connected to drain electrode or the collector of third controllable switch device, and the first capacitor one terminates
To the tie point of first diode and the second diode, another source electrode or emitter for being connected to third controllable switch device；Institute
The third diode stated and the 4th diode concatenation, the anode of the 4th diode are connected to negative busbar, and the cathode of third diode connects
To the tie point of intermediate bridge arm and inductance；Second capacitor, one end is connected to the connection of third diode and the 4th diode
Point, it is another to be connected to input and output side.
In one embodiment, the second controllable switch device and the third controllable switch device differential concatenation
Connection, the drain electrode of the second controllable switch device or collector are connected with the drain electrode of third controllable switch device or collector.
In the second embodiment, the second controllable switch device is reversely gone here and there with the third controllable switch device
Connection connection, the source electrode or emitter of the second controllable switch device are connected with the source electrode of third controllable switch device or emitter.
It further include the 5th diode and the 6th diode on intermediate bridge arm in third embodiment；The third can
The drain electrode or collector for controlling the source electrode or emitter and the second controllable switch device of switching device are connected to input/output terminal；
The source electrode or emitter of the second controllable switch device are connected to the anode of the 5th diode；The third controllable switch device
The drain electrode of part or collector are connected to the cathode of the 6th diode；The cathode of 5th diode and the anode of the 6th diode are connected to electricity
Sense.
Further, any of described two vertically arranged controllable switch devices use IGBT unit or MOS
Unit, when using IGBT unit, the IGBT unit includes the diode that IGBT is managed and connect with IGBT pipe inverse parallel；When
When using MOS cell, the MOS cell can be for the metal-oxide-semiconductor with body diode or include without the metal-oxide-semiconductor of body diode and anti-
Parallel diode.
Further, any of described two controllable switch devices being laterally arranged use IGBT unit or MOS
Unit, when using IGBT unit, the IGBT unit includes the diode that IGBT is managed and connect with IGBT pipe inverse parallel；When
When using MOS cell, the MOS cell can be for the metal-oxide-semiconductor with body diode or include without the metal-oxide-semiconductor of body diode and anti-
Parallel diode.
A kind of three-phase translation circuit, including the first translation circuit, the second translation circuit, third translation circuit；Described
One translation circuit, the second translation circuit and third translation circuit are all made of such as a kind of T described in any one of claims 1 to 6
Type translation circuit；The middle line of the middle line of first translation circuit, the middle line of the second translation circuit and third translation circuit is connected with each other.
Compared with the existing technology, the beneficial effect of acquirement is technical solutions according to the invention:
1, in the T-type translation circuit in the present invention, all controllable switch devices and diode component can realize Sofe Switch,
That is zero voltage switch (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch (ZVZCS), or with limited dv/dt and
Di/dt carries out on-off switching.To significantly reduce the switching losses of controllable switch device, the work of translation circuit is improved
Efficiency；Make power device be not easy to be secondary breakdown, while being eliminated dead time；
2, controllable switch device carries out on-off switching with limited dv/dt and di/dt, thus system EMI electromagnetic interference compared with
Unrealized Sofe Switch will optimize much；
3, since the switching losses of controllable switch device become smaller, converting means is allowed exponentially to work in conventional transformation
On device working frequency, therefore output filter parameter request needed for converting means is lower, and size can also reduce at double, from
And be conducive to further decrease Material Cost, reduction product size improves product power density；
4, it compares and merely adds an inductance, four diodes and two capacitors in the prior art, the present invention, increase device
Number of packages amount is few, simple and compact structure, does not need additionally to increase controllable switch device and control circuit；
5, using the three-phase translation circuit of above-mentioned T-type translation circuit, it is likewise supplied with said effect.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand invention, constitutes a part of the invention, the present invention
Illustrative embodiments and their description be used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the circuit diagram of the first situation in the prior art；
Fig. 2 is the circuit diagram of second situation in the prior art；
Fig. 3 is the circuit diagram of the third situation in the prior art；
Fig. 4 is the circuit diagram of the embodiment one of T-type translation circuit in the present invention；
Fig. 5 is the circuit diagram of the embodiment two of T-type translation circuit in the present invention；
Fig. 6 is the circuit diagram of the embodiment three of T-type translation circuit in the present invention；
Fig. 7 is that the embodiment one of T-type translation circuit of the present invention carries out DC/AC transformation, and inverter output voltage is positive half period
Shi Shuguan is to the operation schematic diagram before the transverse tube change of current；
Fig. 8 is that the embodiment one of T-type translation circuit of the present invention carries out DC/AC transformation, and inverter output voltage is positive half period
First stage operation schematic diagram of the Shi Shuguan to the transverse tube change of current；
Fig. 9 is that the embodiment one of T-type translation circuit of the present invention carries out DC/AC transformation, and inverter output voltage is positive half period
Second stage operation schematic diagram of the Shi Shuguan to the transverse tube change of current；
Figure 10 is that the embodiment one of T-type translation circuit of the present invention carries out DC/AC transformation, and inverter output voltage is positive half period
When transverse tube to the operation schematic diagram before the vertical tube change of current；
Figure 11 is that the embodiment one of T-type translation circuit of the present invention carries out DC/AC transformation, and inverter output voltage is positive half period
When phase III from transverse tube to the vertical tube change of current operation schematic diagram；
Figure 12 is that the embodiment one of T-type translation circuit of the present invention carries out DC/AC transformation, and inverter output voltage is positive half period
When fourth stage from transverse tube to the vertical tube change of current operation schematic diagram；
Figure 13 is that the embodiment one of T-type translation circuit of the present invention carries out AC/DC transformation, and AC-input voltage is positive half period
Shi Shuguan is to the operation schematic diagram before the transverse tube change of current；
Figure 14 is that the embodiment one of T-type translation circuit of the present invention carries out AC/DC transformation, and AC-input voltage is positive half period
First stage operation schematic diagram of the Shi Shuguan to the transverse tube change of current；
Figure 15 is that the embodiment one of T-type translation circuit of the present invention carries out AC/DC transformation, and AC-input voltage is positive half period
Second stage operation schematic diagram of the Shi Shuguan to the transverse tube change of current；
Figure 16 is that the embodiment one of T-type translation circuit of the present invention carries out AC/DC transformation, and AC-input voltage is positive half period
When transverse tube to the operation schematic diagram before the vertical tube change of current；
Figure 17 is that the embodiment one of T-type translation circuit of the present invention carries out AC/DC transformation, and AC-input voltage is positive half period
When operation schematic diagram from transverse tube to the vertical tube change of current；
Figure 18 is the circuit diagram of the embodiment of three-phase translation circuit in the present invention.
Specific embodiment
In order to be clearer and more clear technical problems, technical solutions and advantages to be solved, tie below
Drawings and examples are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Fig. 4 shows the circuit diagram of the embodiment one of T-type translation circuit in the present invention.As shown in figure 4, T-type converts
The embodiment one of circuit includes two vertically arranged controllable switch devices, two controllable switch device, the electricity being laterally arranged
Feel L, first diode D1, the second diode D2, third diode D3, the 4th diode D4, first capacitor C1, the second capacitor
C2, third polar capacitor C3 and quadripolarity capacitor C4.
Two vertically arranged controllable switch devices are respectively the first controllable switch device, the 4th controllable switch device,
In the first controllable switch device use IGBT unit, including the first IGBT pipe Q1 and two pole of the first afterflow being connect with its inverse parallel
Pipe Dq1；4th controllable switch device uses IGBT unit, including the 4th IGBT pipe Q4 and the 4th afterflow connecting with its inverse parallel
Diode Dq4.First IGBT pipe Q1 and the 4th IGBT pipe Q4 is connected in series, and the collector of the first IGBT pipe Q1 connects positive bus-bar,
The emitter of 4th IGBT pipe Q4 connects negative busbar, and the emitter of the first IGBT pipe Q1 and the collector of the 4th IGBT pipe Q4 connect
It connects, tie point is as input/output terminal.
Two controllable switch devices being laterally arranged being located on intermediate bridge arm are respectively the second controllable switch device, third
Controllable switch device, wherein the second controllable switch device use IGBT unit, including the 2nd IGBT pipe Q2 and with its inverse parallel connect
The the second sustained diode q2 connect；Third controllable switch device uses IGBT unit, including the 3rd IGBT pipe Q3 and with it instead simultaneously
Join the third sustained diode q3 of connection.2nd IGBT pipe Q2 and the 3rd IGBT pipe Q3 differential concatenation are connected to intermediate bridge arm.The
The emitter of three IGBT pipe Q3 is connected to input/output terminal；The collector of 3rd IGBT pipe Q3 is connected to the current collection of the 2nd IGBT pipe Q2
Pole；The emitter of 2nd IGBT pipe Q2 is connected to inductance L；The another of inductance L is connected to middle line.
First diode D1 and the second diode D2 concatenation, the cathode of first diode D1 are connected to positive bus-bar, the two or two pole
The anode of pipe D2 is connected to the collector of the 3rd IGBT pipe Q3；An end of first capacitor C1 is connected to first diode D1 and the two or two pole
The tie point of pipe D2, another emitter for being connected to the 3rd IGBT pipe Q3 of first capacitor C1.
Third diode D3 and the 4th diode D4 concatenation, the anode of the 4th diode D4 are connected to negative busbar, the three or two pole
The cathode of pipe D3 is connected to the tie point of inductance L and intermediate bridge arm；Mono- end second capacitor C2 is connected to third diode D3 and the four or two
The tie point of pole pipe D4, second the another of capacitor C2 are connected to input/output terminal.
The anode of third polar capacitor C3 connects positive bus-bar, and cathode connects middle line；The anode of quadripolarity capacitor C4 connects middle line, bears
Pole connects negative busbar.
In the present embodiment, controllable switch device can also use MOS cell, and when using MOS cell, the MOS is mono-
Member can be for the metal-oxide-semiconductor with body diode or include metal-oxide-semiconductor and anti-paralleled diode without body diode.
The T-type translation circuit of the present embodiment, may be implemented in inversion and switching process, all controllable switch devices and two
Pole pipe device can realize Sofe Switch, i.e. zero voltage switch (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch
(ZVZCS), or with limited dv/dt and di/dt on-off switching is carried out.Specifically:
When the embodiment one of T-type translation circuit works in inversion, including inverter output voltage is positive half period and inversion
Output voltage is two half periods of negative half-cycle, and each half period is divided into vertical tube to the transverse tube change of current and transverse tube to the vertical tube change of current two again
A process:
When inverter output voltage is positive half period, vertical tube is as follows to transverse tube commutation course:
Fig. 7 shows vertical tube to the state before the transverse tube change of current.Vertical tube is to before the transverse tube change of current, and vertical tube is to before the transverse tube change of current, and
One IGBT pipe Q1 and the 3rd IGBT pipe Q3 are in the conductive state, and the 2nd IGBT pipe Q2 and the 4th IGBT pipe Q4 are in off state.
At this point, electric current through the first IGBT pipe Q1 flow to load Z, although and the 3rd IGBT pipe Q3 be connected, there is no electric current pass through.Due to
First IGBT pipe Q1 conducting, the second capacitor C2 is charged to Vdc state, at this point, inductance L does not have electric current process, first capacitor C1
Voltage is zero.
Fig. 8 shows the working condition of first stage of from the vertical tube to transverse tube commutation course.In the first stage, the 3rd IGBT
Pipe tends to remain on, and the 4th IGBT pipe Q4 keeps off state, and the first IGBT pipe Q1 then goes to cut-off shape from state
State, the 2nd IGBT pipe Q2 then go on state from off state.As shown in figure 8, in the first IGBT pipe Q1 cut-off, the 2nd IGBT
During pipe Q2 is connected, the second capacitor C2 is discharged by the 4th diode D4 to load Z.At the same time, the second capacitor C2 is also
Energy is filled to inductance L by third sustained diode q3, the 2nd IGBT pipe Q2 and the 4th diode D4.Due on the second capacitor C2
Voltage be gradually discharged to zero, the first IGBT pipe Q1 shutdown moment load Z electric current provided by the second capacitor C2.Therefore,
One IGBT pipe Q1 is turned off in a manner of no-voltage, and turn-off power loss is very small, belongs to typical Sofe Switch process.And since there are inductance
L, the 2nd IGBT pipe Q2 during going on state from off state, electric current foundation be also in a manner of di/dt into
Capable, also belong to Sofe Switch process.
Fig. 9 shows the working condition of vertical tube second stage into transverse tube commutation course.After the completion of first stage, the four or two
Pole pipe D4 cut-off, the electric current of inductance L become zero again.The 4th sustained diode q4 starts afterflow conducting simultaneously.Load Z output
Clamping is in-Vdc/2 level.Inductance L starts energy storage by the second sustained diode q2 and the 3rd IGBT pipe Q3, and inductance L
Electric current start from scratch linearly increasing, at the same time, be commensurately smaller by the electric current of the 4th sustained diode q4.When passing through
After the electric current of 4th sustained diode q4 is reduced to zero, commutation course is completed.The 4th sustained diode q4 ends at this time, by the
Two sustained diode q2 and the 3rd IGBT pipe Q3 carry load electric current.In above process, due to the presence of inductance L, pass through
The curent change occurred in two sustained diode q2, the 2nd IGBT pipe Q2, the 4th sustained diode q4 and the 3rd IGBT pipe Q3
It is all to be carried out with limited current changing rate di/dt.So in the process, they all realize Sofe Switch.And the 4th 2
The afterflow process of pole pipe D4 is equally to be connected and ended with limited current changing rate di/dt, therefore can substantially reduce the
The conduction loss of four diode D4.
When inverter output voltage is positive half period, transverse tube is as follows to vertical tube commutation course:
Figure 10 shows inverter output voltage when being positive half period, and vertical tube is or perhaps horizontal to the state after the transverse tube change of current
Pipe is to the state before the vertical tube change of current.For transverse tube to before the vertical tube change of current, the first IGBT pipe Q1 and the 4th IGBT pipe Q4 are in off state,
2nd IGBT pipe Q2 and the 3rd IGBT pipe Q3 are in the conductive state.At this point, electric current passes through the second sustained diode q2 from inductance L
Load Z is flowed to the 3rd IGBT pipe Q3, although the 2nd IGBT pipe Q2 conducting is passed through without electric current.And first capacitor C1 and second
Capacitor C2 is in no-voltage discharge condition, equal with the electric current through overload Z by the electric current of inductance L.
The working condition of Figure 11 shows transverse tube into vertical tube commutation course phase III.In the phase III, third
IGBT pipe Q3 is tended to remain on, and the 4th IGBT pipe Q4 keeps off state, and the first IGBT pipe Q1 is then gone to from off state
On state, the 2nd IGBT pipe Q2 then go to off state from state.As shown in figure 11, the first IGBT pipe Q1 be connected,
After 2nd IGBT pipe Q2 cut-off, upper half busbar voltage passes through the first IGBT pipe Q1, the second sustained diode q2, the 3rd IGBT pipe
Q3 reversely pressurizes to inductance L, forces and linearly reduces by the electric current of inductance L.At the same time, upper half bus is managed by the first IGBT
Q1 is to load Z power supply.Above-mentioned two circuit is simultaneously deposited, and is worked at the same time.As the electric current for flowing through inductance L gradually reduces, load current
To the current transition for flowing through the first IGBT pipe Q1.When the electric current for flowing through inductance L is zero, the second sustained diode q2 is reversely cut
Only, since the 2nd IGBT pipe Q2 ends, electric current is no longer flow through intermediate bridge arm.
Moment is connected in the first IGBT pipe Q1, due to undertaking load current by inductance L, the first IGBT pipe Q1 conducting is
Zero current passing, electric current of the first IGBT pipe Q1 in turn on process are established in a manner of limited di/dt, therefore first
IGBT pipe Q1 is Sofe Switch operating mode.And the 2nd IGBT pipe Q2 no electricity during going to off state from state
Stream flows through, and also belongs to Sofe Switch operating mode.
Figure 12 shows the working condition of transverse tube fourth stage into vertical tube commutation course.After the completion of phase III, due to
Second capacitor C2 voltage is zero, loads Z output level clamper in Vdc/2 level.Therefore, as shown in figure 16, upper half busbar voltage
It is charged by the first IGBT pipe Q1, third diode D3 and inductance L to the second capacitor C2.Since there are inductance L, when the second capacitor
C2 charge to voltage be Vdc when, third diode D3 reversely ends, charging and commutation course complete, return to electric current through first
The state of IGBT pipe Q1 flow direction load Z, the i.e. state of Fig. 7.
In the second capacitor C2 charging process, third sustained diode q3 and third diode D3 are with limited electric current
Change rate di/dt on and off, therefore, the on and off process of third sustained diode q3 and third diode D3
Middle switching loss is very low, belongs to Sofe Switch operating mode.
Change of current when commutation course and inverter output voltage when inverter output voltage is negative half-cycle are positive half period
Journey is similar, and vertical tube equally requires two stages of experience to the transverse tube change of current or transverse tube to the vertical tube change of current, and this will not be detailed here.
When translation circuit works in rectification, including AC-input voltage is that positive half period and AC-input voltage are negative partly
Two half periods of period, each half period are divided into vertical tube to the transverse tube change of current and transverse tube to two processes of the vertical tube change of current again:
When AC-input voltage is positive half period, vertical tube is as follows to transverse tube commutation course:
Figure 13 shows vertical tube to state before the transverse tube change of current.Vertical tube is to before the transverse tube change of current, the first IGBT pipe Q1 and third
IGBT pipe Q3 is in the conductive state, and the 2nd IGBT pipe Q2 and the 4th IGBT pipe Q4 are in off state.Rectified current is continuous from first
Stream diode Dq1 flows to bus.3rd IGBT pipe Q3 is connected but passes through without electric current.Since the 3rd IGBT pipe is connected, the
One capacitor C1 is in no-voltage discharge condition.Since the first IGBT pipe Q1 is connected, the second capacitor C2 is charged to Vdc shape
State is at this time zero by the electric current of inductance L.
Figure 14 shows vertical tube to the working condition of transverse tube commutation course first stage.In the first stage, the 3rd IGBT is managed
Q3 is tended to remain on, and the 4th IGBT pipe Q4 keeps off state.And the first IGBT pipe Q1 then goes to cut-off shape from state
State, the 2nd IGBT pipe Q2 then go on state from off state.As shown in figure 14, in the process, due to the first afterflow two
Pole pipe Dq1 is in the conductive state, the first sustained diode q1, third sustained diode q3, the 2nd IGBT pipe Q2 and inductance L with
Input source Z establishes circuit.Due to the presence of inductance L, start from scratch by the electric current of intermediate bridge arm linearly increasing；At the same time,
It is linearly reduced by the electric current of the first sustained diode q1, until increase to rectified current by the electric current of inductance L, at this time first
Sustained diode q1 cut-off.
Due to the presence of the first sustained diode q1, the first IGBT pipe Q1 belongs to zero electricity from the process that conducting goes to cut-off
Pressure, zero-current switching.Due to the presence of inductance L, the 2nd IGBT pipe Q2 from cut-off go to conducting during electric current be linearly to increase
Add, therefore the turn on process of the 2nd IGBT pipe Q2 belongs to zero current passing.It is both typical Sofe Switch process.
Figure 15, which shows vertical tube and is hard up for money to transverse tube, flows the working condition of process second stage.After the completion of first stage, first
Sustained diode q1 cut-off, the second capacitor C2 by third sustained diode q3, the 2nd IGBT pipe Q2, the 4th diode D4 and
Inductance L starts to discharge.After discharging into zero.Second stage is completed.
When AC-input voltage is positive half period, transverse tube is as follows to vertical tube commutation course:
Figure 16 shows vertical tube to the state after transverse tube commutation course, that is to say transverse tube to the shape before the vertical tube change of current
State.At this point, the second capacitor C2 electric discharge terminates, rectified current is carried by third sustained diode q3, the 2nd IGBT pipe Q2 and inductance L
Stream.First IGBT pipe Q1 and the 4th IGBT pipe Q4 is in off state, and the 2nd IGBT pipe Q2 and the 3rd IGBT pipe Q3 are on
State.Wherein, the 3rd IGBT pipe Q3 is although in the conductive state but flows through without electric current.And first capacitor C1 and the second capacitor C2
It is in no-voltage discharge condition.Electric current by inductance L is rectified current.
Figure 17 shows transverse tubes to the working condition of vertical tube commutation course.Transverse tube is to when the vertical tube change of current, the 3rd IGBT pipe Q3
It tending to remain on, the 4th IGBT pipe Q4 keeps off state, and the first IGBT pipe Q1 then goes on state from off state,
2nd IGBT pipe Q2 then goes to off state from state.During the 2nd IGBT pipe Q2 cut-off, due to the second capacitor
The presence of C2, rectified current are gone to from by the 2nd IGBT pipe Q2 by the second capacitor C2.The voltage of 2nd IGBT pipe Q2 is from zero
Start linear increase, belongs to no-voltage, zero-current switching.Input source Z fills the second capacitor C2 by third diode D3 and inductance L
In the process of electricity, the electric current that rectified current flow to bus through the first sustained diode q1 is gradually increased, due to two pole of the first afterflow
The presence of pipe Dq1, the first IGBT pipe Q1 no current pass through, therefore the turn on process of the first IGBT pipe Q1 belongs to zero current, zero electricity
Pressure conducting.From above-mentioned analysis it is found that in transverse tube into vertical tube commutation course, the conducting of the first IGBT pipe Q1 and the 2nd IGBT pipe Q2
It is Sofe Switch process with procedures of turn-off.
When the electric current of inductance L gradually becomes zero from rectified current, the second capacitor C2 completes charging, third diode D3 and the
Three sustained diode q3 cut-off, the first sustained diode q1 conducting, completes entire commutation course.Return to the state of Figure 13.
Change of current when commutation course and AC-input voltage when AC-input voltage is negative half-cycle are positive half period
Journey is similar, and vertical tube is also similar to the transverse tube change of current or transverse tube to vertical tube commutation course, and this will not be detailed here.
Fig. 5 shows the circuit diagram of the embodiment two of T-type translation circuit in the present invention.As shown in figure 5, T-type converts
The embodiment two of circuit includes two vertically arranged controllable switch devices, two controllable switch device, the electricity being laterally arranged
Feel L, first diode D1, the second diode D2, third diode D3, the 4th diode D4, first capacitor C1, the second capacitor
C2, third polar capacitor C3 and quadripolarity capacitor C4.
Two vertically arranged controllable switch devices are respectively the first controllable switch device, the 4th controllable switch device,
In the first controllable switch device use IGBT unit, including the first IGBT pipe Q1 and two pole of the first afterflow being connect with its inverse parallel
Pipe Dq1；4th controllable switch device uses IGBT unit, including the 4th IGBT pipe Q4 and the 4th afterflow connecting with its inverse parallel
Diode Dq4.First IGBT pipe Q1 and the 4th IGBT pipe Q4 is connected in series, and the collector of the first IGBT pipe Q1 connects positive bus-bar,
The emitter of 4th IGBT pipe Q4 connects negative busbar, and the emitter of the first IGBT pipe Q1 and the collector of the 4th IGBT pipe Q4 connect
It connects, tie point is as input/output terminal.
Two controllable switch devices being laterally arranged being located on intermediate bridge arm are respectively the second controllable switch device, third
Controllable switch device, wherein the second controllable switch device use IGBT unit, including the 2nd IGBT pipe Q2 and with its inverse parallel connect
The the second sustained diode q2 connect；Third controllable switch device uses IGBT unit, including the 3rd IGBT pipe Q3 and with it instead simultaneously
Join the third sustained diode q3 of connection.2nd IGBT pipe Q2 and the 3rd IGBT pipe Q3 differential concatenation are connected to intermediate bridge arm.The
The collector of two IGBT pipe Q2 is connected to input/output terminal；The emitter of 2nd IGBT pipe Q2 is connected to the transmitting of the 3rd IGBT pipe Q3
Pole；The collector of 3rd IGBT pipe is connected to inductance L；The another of inductance L is connected to middle line.
First diode D1 and the second diode D2 concatenation, the cathode of first diode D1 are connected to positive bus-bar, the two or two pole
The anode of pipe D2 is connected to the collector of the 3rd IGBT pipe Q3；An end of first capacitor C1 is connected to first diode D1 and the two or two pole
The tie point of pipe D2, another emitter for being connected to the 3rd IGBT pipe Q3 of first capacitor C1.
Third diode D3 and the 4th diode D4 concatenation, the anode of the 4th diode D4 are connected to negative busbar, the three or two pole
The cathode of pipe D3 is connected to the tie point of inductance L and intermediate bridge arm；Mono- end second capacitor C2 is connected to third diode D3 and the four or two
The tie point of pole pipe D4, second the another of capacitor C2 are connected to input/output terminal.
The anode of third polar capacitor C3 connects positive bus-bar, and cathode connects middle line；The anode of quadripolarity capacitor C4 connects middle line, bears
Pole connects negative busbar.
In the present embodiment, controllable switch device can also use MOS cell, and when using MOS cell, the MOS is mono-
Member can be for the metal-oxide-semiconductor with body diode or include metal-oxide-semiconductor and anti-paralleled diode without body diode.
Embodiment two controllable switch device and diode in commutation course realize the principle and one phase of embodiment of Sofe Switch
Seemingly, this will not be detailed here.
Fig. 6 shows the circuit diagram of the embodiment three of T-type translation circuit in the present invention.As shown in fig. 6, T-type converts
The embodiment two of circuit includes two vertically arranged controllable switch devices, two controllable switch device, the electricity being laterally arranged
Feel L, first diode D1, the second diode D2, third diode D3, the 4th diode D4, the 5th diode D5, the six or two pole
Pipe D6, first capacitor C1, the second capacitor C2, third polar capacitor C3 and quadripolarity capacitor C4.
Two vertically arranged controllable switch devices are respectively the first controllable switch device, the 4th controllable switch device,
In the first controllable switch device use IGBT unit, including the first IGBT pipe Q1 and two pole of the first afterflow being connect with its inverse parallel
Pipe Dq1；4th controllable switch device uses IGBT unit, including the 4th IGBT pipe Q4 and the 4th afterflow connecting with its inverse parallel
Diode Dq4.First IGBT pipe Q1 and the 4th IGBT pipe Q4 is connected in series, and the collector of the first IGBT pipe Q1 connects positive bus-bar,
The emitter of 4th IGBT pipe Q4 connects negative busbar, and the emitter of the first IGBT pipe Q1 and the collector of the 4th IGBT pipe Q4 connect
It connects, tie point is as input/output terminal.
It include two controllable switch device, the 5th diode and the 6th diodes being laterally arranged on intermediate bridge arm.Two
The controllable switch device being laterally arranged is respectively the second controllable switch device, third controllable switch device, wherein second controllably opens
It closes device and uses IGBT unit, including the 2nd IGBT pipe Q2 and the second sustained diode q2 being connect with its inverse parallel；Third can
It controls switching device and uses IGBT unit, including the 3rd IGBT pipe Q3 and the third sustained diode q3 being connect with its inverse parallel.The
The collector of two IGBT pipe Q2 and the emitter of the 3rd IGBT pipe Q3 are connected to input/output terminal；The emitter of 2nd IGBT pipe Q2 connects
To the anode of the 5th diode D5, the collector of the 3rd IGBT pipe Q3 is connected to the cathode of the 6th diode D6, the 5th diode D5
Cathode and the anode of the 6th diode D6 be connected to one end of inductance L；The another of inductance L is connected to middle line.
First diode D1 and the second diode D2 concatenation, the cathode of first diode D1 are connected to positive bus-bar, the two or two pole
The anode of pipe D2 is connected to the collector of the 3rd IGBT pipe Q3；An end of first capacitor C1 is connected to first diode D1 and the two or two pole
The tie point of pipe D2, another emitter for being connected to the 3rd IGBT pipe Q3 of first capacitor C1.
Third diode D3 and the 4th diode D4 concatenation, the anode of the 4th diode D4 are connected to negative busbar, the three or two pole
The cathode of pipe D3 is connected to the tie point of inductance L and intermediate bridge arm；Mono- end second capacitor C2 is connected to third diode D3 and the four or two
The tie point of pole pipe D4, second the another of capacitor C2 are connected to input/output terminal.
The anode of third polar capacitor C3 connects positive bus-bar, and cathode connects middle line；The anode of quadripolarity capacitor C4 connects middle line, bears
Pole connects negative busbar.
In the present embodiment, controllable switch device can also use MOS cell, and when using MOS cell, the MOS is mono-
Member can be for the metal-oxide-semiconductor with body diode or include metal-oxide-semiconductor and anti-paralleled diode without body diode.
Embodiment three controllable switch device and diode in commutation course realize the principle and one phase of embodiment of Sofe Switch
Seemingly, this will not be detailed here.
It can be seen that in the T-type translation circuit in the present invention from three above embodiment, all controllable switch devices and two
Pole pipe device can realize Sofe Switch, i.e. zero voltage switch (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch
(ZVZCS), or with limited dv/dt and di/dt on-off switching is carried out.To significantly reduce the on-off of controllable switch device
Loss, improves the working efficiency of translation circuit；Make power device be not easy to be secondary breakdown, while being eliminated dead time.
Controllable switch device carries out on-off switching with limited dv/dt and di/dt, therefore system EMI electromagnetic interference is more not
Realize that Sofe Switch will optimize much.
Since the switching losses of controllable switch device become smaller, converting means is allowed exponentially to work in conventional transformation dress
It sets on working frequency, therefore output filter parameter request needed for converting means is lower, size can also reduce at double, thus
Be conducive to further decrease Material Cost, reduction product size improves product power density.
It compares and merely adds an inductance, four diodes and two capacitors in the prior art, the present invention, increase device
Quantity is few, simple and compact structure, does not need additionally to increase controllable switch device and control circuit.
Figure 18 shows the circuit diagram of the embodiment of three-phase translation circuit in the present invention.As shown in figure 18, embodiment
In three-phase translation circuit include the first translation circuit, the second translation circuit, third translation circuit；First translation circuit, second
Translation circuit and third translation circuit are all made of T-type translation circuit described in the embodiment one of above-mentioned T-type translation circuit；First
The middle line of the middle line of translation circuit, the middle line of the second translation circuit and third translation circuit is connected with each other.Certainly, the first transformation electricity
Road, the second translation circuit, third translation circuit can also be retouched using the embodiment two or embodiment three of above-mentioned T-type translation circuit
The T-type translation circuit stated, effect are the same.
Description above describe the preferred embodiment of the present invention, it is to be understood that the present invention is not limited to above-mentioned implementation
Example, and excluding other embodiments should not be regarded as.Enlightenment through the invention, those skilled in the art combine known or existing
The change that technology, knowledge are carried out also should be regarded as within the scope of the present invention.
Claims (7)
1. a kind of T-type translation circuit, it is characterized in that: be laterally arranged including two vertically arranged controllable switch devices, two
Controllable switch device, inductance, first diode, the second diode, third diode, the 4th diode, first capacitor and second
Capacitor；
The vertically arranged controllable switch devices in series connection of described two, one end connect positive bus-bar, and the other end connects negative busbar；
Tie point between the vertically arranged controllable switch device of described two is as input/output terminal；
The controllable switch device that described two are laterally arranged is located on intermediate bridge arm；One end of intermediate bridge arm is connected to input and output
End, another one end for being connected to inductance of intermediate bridge arm；The another of inductance is connected to middle line；
In the controllable switch device that described two are laterally arranged, the controllable switch device for meeting first condition or second condition is fixed
Justice is the second controllable switch device, and the controllable switch device for meeting third condition or fourth condition is defined as third controllable switch device
Part；The first condition is that the source electrode of the controllable switch device or emitter are connected to inductance；The second condition is that this can
The drain electrode or collector for controlling switching device are connected to input/output terminal；The third condition be the controllable switch device source electrode or
Emitter is connected to input/output terminal；The fourth condition is that the drain electrode of the controllable switch device or collector are connected to inductance；
The first diode and the second diode concatenation, the cathode of first diode are connected to positive bus-bar, the second diode
Anode is connected to drain electrode or the collector of third controllable switch device, and one end of first capacitor is connected to first diode and second
The tie point of diode, another source electrode or emitter for being connected to third controllable switch device；
The third diode and the 4th diode concatenation, the anode of the 4th diode are connected to negative busbar, third diode
Cathode is connected to the tie point of inductance and intermediate bridge arm；Second capacitor, one end is connected to third diode and the 4th diode
Tie point, it is another to be connected to input and output side.
2. a kind of T-type translation circuit as described in claim 1, characterized in that the second controllable switch device with it is described
The connection of third controllable switch device differential concatenation, the drain electrode of the second controllable switch device or collector and third controllable switch device
The drain electrode of part or collector are connected.
3. a kind of T-type translation circuit as described in claim 1, characterized in that the second controllable switch device with it is described
The connection of third controllable switch device differential concatenation, the source electrode or emitter of the second controllable switch device and third controllable switch device
The source electrode or emitter of part are connected.
4. a kind of T-type translation circuit as described in claim 1, characterized in that further include on intermediate bridge arm the 5th diode and
6th diode；
The drain electrode of the source electrode or emitter of the third controllable switch device and the second controllable switch device or current collection
Pole is connected to input/output terminal；
The source electrode or emitter of the second controllable switch device are connected to the anode of the 5th diode；
The drain electrode of the third controllable switch device or collector are connected to the cathode of the 6th diode；
The cathode of 5th diode and the anode of the 6th diode are connected to inductance.
5. a kind of T-type translation circuit according to any one of claims 1 to 4, characterized in that described two are vertically arranged
Any of controllable switch device use IGBT unit or MOS cell, when using IGBT unit, the IGBT unit
The diode managed including IGBT and connect with IGBT pipe inverse parallel；When using MOS cell, the MOS cell can be band body
The metal-oxide-semiconductor of diode includes metal-oxide-semiconductor and anti-paralleled diode without body diode.
6. a kind of T-type translation circuit according to any one of claims 1 to 4, characterized in that the laterally setting of described two
Any of controllable switch device use IGBT unit or MOS cell, when using IGBT unit, the IGBT unit
The diode managed including IGBT and connect with IGBT pipe inverse parallel；When using MOS cell, the MOS cell can be band body
The metal-oxide-semiconductor of diode includes metal-oxide-semiconductor and anti-paralleled diode without body diode.
7. a kind of three-phase translation circuit, characterized in that including the first translation circuit, the second translation circuit, third translation circuit；Institute
The first translation circuit, the second translation circuit and the third translation circuit stated are all made of as described in any one of claims 1 to 6
A kind of T-type translation circuit；The middle line of the middle line of first translation circuit, the middle line of the second translation circuit and third translation circuit is mutual
Connection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710361250.1A CN108964508B (en) | 2017-05-19 | 2017-05-19 | T-shaped conversion circuit and corresponding three-phase conversion circuit |
| PCT/CN2018/087270 WO2018210301A1 (en) | 2017-05-19 | 2018-05-17 | T-type converter circuit and corresponding three-phase converter circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710361250.1A CN108964508B (en) | 2017-05-19 | 2017-05-19 | T-shaped conversion circuit and corresponding three-phase conversion circuit |
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| Publication Number | Publication Date |
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| CN108964508A true CN108964508A (en) | 2018-12-07 |
| CN108964508B CN108964508B (en) | 2020-08-28 |
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| CN102255538A (en) * | 2010-05-19 | 2011-11-23 | 力博特公司 | T-shaped three-level inverter circuit |
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| CN102804570A (en) * | 2010-02-18 | 2012-11-28 | 康斯坦茨大学 | 3-stage pulse width modulation inverter with discharge network |
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| US20150108958A1 (en) * | 2012-12-28 | 2015-04-23 | Eaton Corporation | Hybrid three-level t-type converter for power applications |
| CN105024532A (en) * | 2014-04-16 | 2015-11-04 | 艾默生网络能源有限公司 | Single-phase three-level inverter and three-phase three-level inverter |
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