CN108963968A - DC power supply short-circuit protection - Google Patents
DC power supply short-circuit protection Download PDFInfo
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- CN108963968A CN108963968A CN201710347664.9A CN201710347664A CN108963968A CN 108963968 A CN108963968 A CN 108963968A CN 201710347664 A CN201710347664 A CN 201710347664A CN 108963968 A CN108963968 A CN 108963968A
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- semiconductor
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- power supply
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
Abstract
The present invention relates to a kind of DC power supply short-circuit protections, provide load short circuit protection function in the power supply process to a circuit for a DC power supply comprising: the first semiconductor and the second semiconductor circuit and first resistor, second resistance；It or include: third semiconductor and the 4th semiconductor circuit and 3rd resistor, the 4th resistance；By the technical program, make DC power supply when short circuit occurs for load end, can realize the function of open circuit DC power supply power supply in moment, and achievees the effect that protect DC power supply.
Description
Technical field
The protective device that the present invention relates to a kind of DC power supplies in power supply when short circuit occurs for load end, more particularly to
It is a kind of that DC power supply is avoided to load the DC power supply short circuit that both ends generation short circuit causes DC power supply to damage in powering load
Protective device.
Background technique
In tradition, the protection of DC power supply is usually fuse (Fuse) or thermoelectricity circuit breaker (Thermal Circuit
Breaker) or battery discharge protection integrated circuit (Cell Discharge Protection IC), there are many product, and
Operation logic is roughly the same, about battery discharge protection integrated circuit with Texas Instrument (Texas Instruments)
Bq77910 (Polymer Precision Protector) is representative, is had the disadvantage that:
1. if short circuit occurs for load end, short circuit current reaches fuse when DC power supply and fuse series-fed are in load
Fusing point when, blown fuse, DC power supply and load end are opened a way, and disadvantage is the electricity that a period of time is needed before blown fuse
Stream loss, and there is spark generation in blown fuse moment, and the danger and replacement fuse that may cause fire cause the time unrestrained
Take.
2. when DC power supply and thermoelectricity circuit breaker series-fed are in load, if short circuit occurs for load end, short circuit current
When reaching the temperature of thermoelectricity circuit breaker, heater circuit breaker contacts point tripping, DC power supply and load end are opened a way, and disadvantage is
Need the current loss of a period of time before thermoelectricity circuit breaker escape, thermoelectricity circuit breaker to restore to the original state state when needing cooling
Between or the movement that restores of hand pressure, and the temperature of contact point tripping is different from the temperature of recovery, and thermoelectricity circuit breaker has operation
The service life of number limits.
3. as shown in Figure 10, being the module diagram 300 of bq77910, related load end is only listed in figure, short circuit occurs
When operation module figure, operation module when short circuit occurs for remaining unrelated load end is not included in wherein, and related load end generation is short
Operation module figure when road includes electric discharge n channel metal oxide semiconductor field-effect transistor driver 33, logic controller
(Control Logic) 32, can Preprogrammed discharge short circuit comparator 31, detector 34, n channel metal oxide semiconductor field effect it is brilliant
Body pipe 35 and battery 36；Its operating principle is the electricity when loading 200 when short circuit occurs for circuit positive terminal V+ and circuit negative electricity end V-
36 high current of pond is powered at short-circuit conductor, and 34 both ends generation of detector at this time-power voltage supply is in can Preprogrammed discharge short circuit comparator
31, when reach can Preprogrammed discharge short circuit comparator 31 setting voltage when, can 31 output voltage of Preprogrammed discharge short circuit comparator letter
Number logic controller 32 is given, then brilliant to electric discharge N channel metal oxidation semiconductcor field effect by 32 output voltage signal of logic controller
Body pipe driver 33, then negative voltage is exported by electric discharge n channel metal oxide semiconductor field-effect transistor driver 33, execution N is gone to lead to
The open circuit of road metal oxide semiconductor field effect transistor 35 (Off) operation, when n channel metal oxide semiconductor field-effect transistor 35
When executing open circuit operation, battery 46 is protected；Its disadvantage is detector 34 must pass through set short circuit current and makes
At the loss of electric current, battery 36 can not be applied to the demand of the great start-up current of electric motor if setting short circuit current is too low,
And electric discharge n channel metal oxide semiconductor field-effect transistor driver 33 is needed, logic controller 32 can Preprogrammed discharge short circuit
The setting of comparator 31, detector 34, the devices such as n channel metal oxide semiconductor field-effect transistor 35 and battery 36 could be complete
At the protection operation of 200 short circuit of load, and form the waste of circuit cost.
Summary of the invention
The present invention applies the-semiconductor and the second semiconductor circuit, occurs to reach DC power supply in power supply to load short
The purpose that DC power supply is protected when road.
When short circuit occurs for load, the present invention can execute the-using the second semiconductor circuit in a very short period of time and partly lead
Body opening action, to reach the function of protection DC power supply and avoid the various disasters because of caused by load short circuits.
Present invention application third semiconductor and the 4th semiconductor circuit, reach DC power supply and load short circuits occur in power supply
When the purpose protected of DC power supply.
When short circuit occurs for load, the present invention can execute in a very short period of time third using the 4th semiconductor circuit and partly lead
Body opening action, to reach the function of protection DC power supply and avoid the various disasters because of caused by load short circuits.
In order to achieve the above objectives, the present invention provides a kind of DC power supply short-circuit protections, for a DC power supply right
Load short circuit protection function is provided in the power supply process of one circuit, the circuit has a circuit positive terminal and a circuit negative electricity
End, the DC power supply short-circuit protection includes: one first semiconductor, has a drain, a source electrode and a gate, and described the
The drain of semiconductor connects circuit negative electricity end；One second semiconductor has a drain, a source electrode and a gate, described
The drain of second semiconductor connects the gate of first semiconductor, and the source electrode connection of second semiconductor described the first half is led
The source electrode of body；One first resistor has two ends, and one end connects the gate of second semiconductor, described in other end connection
Circuit negative electricity end；And a second resistance, there are two ends, one end connects the circuit positive terminal, other end connection described the
The drain of two semiconductors.
As a further improvement of the present invention, first semiconductor be n channel metal oxide semiconductor field-effect transistor,
N-type transistor, N-type insulation gate bipolar transistor and combinations thereof.
As further improvement of the invention, second semiconductor is that crystal is imitated in n channel metal oxide semiconductor field
Pipe, N-type transistor, N-type insulation gate bipolar transistor and combinations thereof.
As further improvement of the invention, the source electrode of the source electrode of first semiconductor and second semiconductor connects
The negative electricity end of the DC power supply is connect, the circuit positive terminal connects the positive terminal of the DC power supply.
As a further improvement of the present invention, the circuit positive terminal connects the positive terminal of the load, the circuit
Negative electricity end connects the negative electricity end of the load.
The present invention also provides a kind of DC power supply short-circuit protections, for a DC power supply to a circuit power supply process
Middle offer load short circuit protection function, the circuit have a circuit positive terminal and a circuit negative electricity end, and the DC power supply is short
Line protection device includes: a third semiconductor, has a drain, a source electrode and a gate, and the drain of the third semiconductor connects
Connect the circuit positive terminal；One the 4th semiconductor has a drain, a source electrode and a gate, the drain of the 4th semiconductor
The gate of the third semiconductor is connected, the source electrode of the 4th semiconductor connects the source electrode of the third semiconductor；One third
Resistance has two ends, and one end connects the circuit positive terminal, and the other end connects the gate of the 4th semiconductor；And one
4th resistance has two ends, and one end connects the drain of the 4th semiconductor, and the other end connects circuit negative electricity end.
As a further improvement of the present invention, the third semiconductor be p channel metal oxide semiconductor field-effect transistor,
P-type transistor, p-type insulation gate bipolar transistor and combinations thereof.
As further improvement of the invention, the 4th semiconductor is that crystal is imitated in p channel metal oxide semiconductor field
Pipe, P-type transistor, p-type insulation gate bipolar transistor and combinations thereof.
As further improvement of the invention, the source electrode of the source electrode of the third semiconductor and the 4th semiconductor connects
The positive terminal of the DC power supply is connect, circuit negative electricity end connects the negative electricity end of the DC power supply.
As a further improvement of the present invention, the circuit positive terminal connects the positive terminal of the load, the circuit
Negative electricity end connects the negative electricity end of the load.
The present invention has following features:
Its open circuit for being responsible for DC power supply of the-semiconductor of the invention and conducting are powered at load.
Second semiconductor circuit of the invention includes the second semiconductor, first resistor and second resistance, is responsible for control
The open circuit of the-semiconductor and conducting operate, and protect DC power supply to achieve the purpose that load when short circuit occurs for both ends.
The present invention reaches the open circuit of the first semiconductor of control with the operating time of the second semiconductor circuit and conducting operates, and does
DC power supply protection when short circuit occurs for load both ends, and with above-mentioned known technology is all execution when reaching setting electric current value
The technical method of open-circuit-protection operation is different.
Third semiconductor of the invention is responsible for the open circuit of DC power supply and conducting is powered at load.
4th semiconductor circuit of the invention includes the 4th semiconductor, 3rd resistor and the 4th resistance, is responsible for control the
The open circuit of three semiconductors and conducting operate, and protect DC power supply to achieve the purpose that load when short circuit occurs for both ends.
The present invention reaches the open circuit and conducting operation that control third is partly led with the operating time of the 4th semiconductor circuit, as
DC power supply protection when short circuit occurs for both ends is loaded, and executes when being all to reach setting electric current value with above-mentioned known technology and opens
The technical method of road protection operation is different.
The present invention is with the technology of the-semiconductor and the second semiconductor circuit or third semiconductor and the 4th semiconductor circuit
Method makes DC power supply when short circuit occurs for load end, can be in the function of moment open circuit DC power supply power supply, and it is straight to reach protection
The effect in galvanic electricity source, technical method of the invention, function and protecting effect are and known fuse, thermoelectricity circuit breaker and electricity
Pond short-circuit protection integrated circuit is different.
DC power supply of the present invention refers to the power supply other than AC power source, such as the electricity of DC power supply supply
Source, various batteries, solar battery, fuel cell, direct current supercapacitor and other belong to the power supply of DC characteristics, can all answer
Use the present invention that the protection of short circuit occurs as load both ends.
Detailed description of the invention
Fig. 1 is the schematic diagram of DC power supply short-circuit protection first embodiment of the invention.
Fig. 2 is the short circuit current measured drawing of Fig. 1.
Fig. 3 is the tables of data of the short circuit current measured drawing of Fig. 2.
Fig. 4 is the schematic diagram of DC power supply short-circuit protection second embodiment of the invention.
Fig. 5 is the schematic diagram of DC power supply short-circuit protection 3rd embodiment of the invention.
Fig. 6 is the schematic diagram of DC power supply short-circuit protection fourth embodiment of the invention.
Fig. 7 is the schematic diagram of the 5th embodiment of DC power supply short-circuit protection of the invention.
Fig. 8 is the schematic diagram of DC power supply short-circuit protection sixth embodiment of the invention.
Fig. 9 is the schematic diagram of the 7th embodiment of DC power supply short-circuit protection of the invention.
Figure 10 is the module diagram of the battery discharge protection integrated circuit bq77910 of known Texas Instrument.
Symbol indicates in figure:
10 first semiconductors；11 second semiconductors；12 first resistors；13 second resistances；14 the 5th semiconductors；15 the 6th
Semiconductor；16 the 7th semiconductors；20 third semiconductors；21 the 4th semiconductors；22 3rd resistors；23 the 4th resistance；24
8th semiconductor；25 the 9th semiconductors；31 can Preprogrammed discharge short circuit comparator；32 logic controllers；33 electric discharge N channel gold
Belong to oxidation semiconductcor field effect transistor driver；34 detectors；35 n channel metal oxide semiconductor field-effect transistors；36 electricity
Pond；The module diagram of the battery discharge protection integrated circuit bq77910 of 300 Texas Instrument；100 DC power supplies；200 is negative
It carries；V+ circuit positive terminal；V- circuit negative electricity end.
Specific embodiment
As shown in Figure 1, the schematic diagram of the DC power supply short-circuit protection first embodiment for one embodiment of the invention.From
It is found that DC power supply short-circuit protection includes the first semiconductor 10 and the second semiconductor circuit in figure.Wherein, the second semiconductor
Circuit includes the second semiconductor 11, first resistor 12 and second resistance 13.The source S of the-semiconductor 10 connects DC power supply
The source S of 100 negative electricity end and the second semiconductor 11, the drain D connection circuit negative electricity end V- of the first semiconductor 10, the first half lead
The drain D of the second semiconductor of gate G connection 11 of body 10；The other end of the drain D connection second resistance 13 of second semiconductor 11,
The source S of source S connection the-semiconductor 10 of second semiconductor 11, the gate G connection first resistor 12 of the second semiconductor 11
- end, the other end connection circuit negative electricity end V- of first resistor 12, second resistance 13-end connection circuit positive terminal V+；The
Semiconductor 10 is n channel metal oxide semiconductor field-effect transistor 35, contains body diode, the second semiconductor in transistor
11 be n channel metal oxide semiconductor field-effect transistor 35, contains body diode in transistor；The positive electricity of DC power supply 100
End connection circuit positive terminal V+, the negative electricity end of DC power supply 100 connect the source S and the second semiconductor 11 of the first semiconductor 10
Source S；The positive terminal of circuit positive terminal V+ connection load 200, the negative electricity end of circuit negative electricity end V- connection load 200.
As shown in Figure 1, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 positive terminal be powered at circuit positive terminal V+ and second resistance 13-end, another-end of second resistance 13 is connected to first
The gate G of semiconductor 10, the source S of the first semiconductor 10 and drain D conducting at this time, the supply current of DC power supply 100 is from straight
The positive terminal in galvanic electricity source 100 is to circuit positive terminal V+, positive terminal and negative electricity end through overload 200, reaches the first semiconductor 10
Drain D and circuit negative electricity end V-, then reach the source S of the first semiconductor 10, and return to the negative electricity end of DC power supply 100, and
Reach the powered operation of DC power supply 100, because the drain D of the first semiconductor 10 is connected with source S, the second semiconductor 11
Gate G be connected with source S, therefore the drain D of the second semiconductor 11 and source S are open-circuit condition, do not influence DC power supply 100
Powered operation.
As shown in Figure 1, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection are as follows: DC power supply at this time
100 positive terminal is powered at circuit positive terminal V+ and short-circuit conductor reaches circuit negative electricity end V-, and equivalent the-semiconductor 10 is drawn
Pole D and the other end of first resistor 12 directly connect the positive terminal of DC power supply 100, and positive voltage is arrived by first resistor 12 at this time
Up to the gate G of the second semiconductor 11, the then drain D of the second semiconductor 11 and source S conducting, because the second semiconductor 11 is drawn
Pole D and source S conducting, the source S of the first semiconductor 10 is connected with gate G at this time, and makes drain D and the source of the first semiconductor 10
Pole S open circuit, and terminate short circuit current by the first semiconductor 10 drain D to source S generation, to reach protection DC power supply
100 purpose；If desired the on state of the second semiconductor 11 is released, short-circuit conductor need to only be removed, the second half can be released
The on state of conductor 11, and restore the normal condition of the first semiconductor 10.
As shown in Fig. 2, being the short circuit current measured drawing of Fig. 1 of the present invention, as circuit positive terminal V+ and circuit negative electricity end V- two
Short-circuit conductor in termination, and the test bar of oscillograph is connected to measure the waveform of short circuit current, then again on short-circuit conductor
DC power supply 100 is connected, the supply voltage of DC power supply 100 is 10 volts；As shown in Fig. 2, measured by its current waveform
Effective current value is 1.74A, and maximum output current value (Max) is 7.48A, and minimum current value (Min) is 40mA, current waveform week
Phase is 200 μ S, it follows that its virtual value power consumption (Power Loss) is very small, current wave form cycle demand is according to the first half
Depending on the closing property and circuit component values of conductor 10 and the second semiconductor 11, and it is unlimited using specified semiconductor and circuit group
Part value；Instrument model measured by the present invention is the DPO4034 type oscillograph of Pektronix company, the measurement of circuit of the present invention
Point data is all in the error permissible range of the instrument, and DC power supply 100 is to be supplied using the DC power supply of Goodwill company
Answer device, model GPS-3030D.
As shown in figure 3, the tables of data of the short circuit current measured drawing for Fig. 2 of the present invention, for by Fig. 2 oscilloscope current waveform institute
The maximum output current value of measurement, minimum current value and effective current value indicate the number of the result of actual fabrication by digitization
It is for reference according to table；Short circuit current waveform and data as shown in Figure 3 is it is found that present invention energy evidence gives implementation, and can prove that this
When invention and known technology above-mentioned are all to reach setting electric current value, the technical method for executing open-circuit-protection operation is different.
As shown in figure 4, be DC power supply short-circuit protection second embodiment of the present invention schematic diagram, from figure it is found that
It includes third semiconductor 20 and the 4th semiconductor circuit.4th semiconductor circuit includes the 4th semiconductor 21,3rd resistor 22
And the 4th resistance 23, the positive terminal of the source S connection DC power supply 100 of third semiconductor 20 and the source S of the 4th semiconductor 21,
The drain D connection circuit positive terminal V+ of third semiconductor 20, the drain of the 4th semiconductor 21 of gate G connection of third semiconductor 20
D；The source S of one end of the 4th resistance 23 of drain D connection of the 4th semiconductor 21, the 4th semiconductor 21 connects third semiconductor 20
Source S, the gate G connection 3rd resistor 22 of the 4th semiconductor 21 it is another-end, 3rd resistor 22 one end connection circuit just
Electric end V+, another-end connection circuit negative electricity end V- of the 4th resistance 23；Third semiconductor 20 is p channel metal oxide semiconductor field
Transistor to be imitated, body diode is contained in transistor, the 4th semiconductor 21 is p channel metal oxide semiconductor field-effect transistor,
Contain body diode in its transistor；The negative electricity end of DC power supply 100 connects circuit negative electricity end V-, the positive electricity of DC power supply 100
The source S of end connection third semiconductor 20 and the source S of the 4th semiconductor 21；The positive electricity of circuit positive terminal V+ connection load 200
End, the negative electricity end of circuit negative electricity end V- connection load 200.
As shown in figure 4, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 negative electricity end is powered at another-end of circuit negative electricity end V- and the 4th resistance 23, the 4th resistance 23-end is connected to third
The gate G of semiconductor 20, the positive terminal of DC power supply 100 are powered at the source S of third semiconductor 20, at this time third semiconductor 20
Source S and drain D conducting, the supply current of DC power supply 100 is from the positive terminal of DC power supply 100 to third semiconductor 20
Source S and drain D arrive circuit positive terminal V+, and positive terminal and negative electricity end through overload 200 reach circuit negative electricity end V-, and return
To the negative electricity end of DC power supply 100, and reach the powered operation of DC power supply 100, because of the drain D of third semiconductor 20 and source
Pole S conducting, so the gate G of the 4th semiconductor 21 is connected with source S, therefore the drain D of the 4th semiconductor 21 is to open with source S
Line state does not influence the powered operation of DC power supply 100.
As shown in figure 4, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection at this time are as follows: circuit positive electricity
End V+ and the circuit negative electricity end both ends V- connect short-circuit conductor be equal third semiconductor 20 drain D and 3rd resistor 22-end directly
The negative electricity end of DC power supply 100 is connected, negative voltage reaches the gate G of the 4th semiconductor 21 by 3rd resistor 22 at this time,
Then the drain D of the 4th semiconductor 21 and source S conducting, because of the drain D of the 4th semiconductor 21 and source S conducting, at this time the
The source S of three semiconductors 20 is connected with gate G, and makes the drain D and source S open circuit of third semiconductor 20, and terminates short circuit electricity
Stream by third semiconductor 20 source S arrive drain D generation, with achieve the purpose that protection DC power supply 100；If desired is released
Short-circuit conductor need to only be removed, can release the on state of the 4th semiconductor 21 by the on state of four semiconductors 21, and be restored
The normal condition of third semiconductor 20.
For the demand of practical application, the third semiconductor 20 of Fig. 4 and the 4th semiconductor 21 can be changed simultaneously is two
P-type transistor or two p-types insulate gate bipolar transistors, and function and operating principle are with above-mentioned by third semiconductor
20 and the 4th the circuit function that is constituted of semiconductor 21 and operating principle it is identical, without repeating.
As shown in figure 5, be DC power supply short-circuit protection 3rd embodiment of the present invention schematic diagram, from figure it is found that
For the second semiconductor 11 in Fig. 1 is changed to the 5th semiconductor 14, other circuit frameworks are all identical as Fig. 1.5th semiconductor 14
The first semiconductor of emitter-base bandgap grading E connection 10 source S, one end of the base stage B connection first resistor 12 of the 5th semiconductor 14, first electricity
The other end of resistance 12 connects circuit negative electricity end V-, the gate G and second of the first semiconductor of collector C connection 10 of the 5th semiconductor 14
Another-end of resistance 13, remaining circuit connection is all identical as Fig. 1, and without repeating, the 5th semiconductor 14 is N-type transistor.
As shown in figure 5, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 positive terminal be powered at circuit positive terminal V+ and second resistance 13-end, another-end of second resistance 13 is connected to first
The gate G of semiconductor 10, the source S of the first semiconductor 10 and drain D conducting at this time, the supply current of DC power supply 100 is from straight
The positive terminal in galvanic electricity source 100 is to circuit positive terminal V+, positive terminal and negative electricity end through overload 200, reaches the first semiconductor 10
Drain D and circuit negative electricity end V-, then reach the source S of the first semiconductor 10, and return to the negative electricity end of DC power supply 100, and
Reach the powered operation of DC power supply 100, because the drain D of the first semiconductor 10 is connected with source S, the 5th semiconductor 14
Base stage B be connected with emitter-base bandgap grading E, therefore the collector C and emitter-base bandgap grading E of the 5th semiconductor 14 be open-circuit condition, do not influence DC power supply 100
Powered operation.
As shown in figure 5, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection are as follows: DC power supply at this time
100 positive terminal is powered at circuit positive terminal V+ and short-circuit conductor reaches circuit negative electricity end V-, and equivalent the-semiconductor 10 is drawn
Pole D and first resistor 12 directly connect the positive terminal of DC power supply 100, and the other end of the positive voltage Jing Guo first resistor 12 arrives at this time
Up to the base stage B of the 5th semiconductor 14, then collector C and emitter-base bandgap grading the E conducting of the 5th semiconductor 14, because of the collection of the 5th semiconductor 14
Pole C and emitter-base bandgap grading E conducting, the source S of the first semiconductor 10 is connected with gate G at this time, and makes drain D and the source of the first semiconductor 10
Pole S open circuit, and terminate short circuit current by the first semiconductor 10 drain D to source S generation, to reach protection DC power supply
100 purpose；If desired the on state for releasing the 5th semiconductor 14, short-circuit conductor need to only be removed, can release the 5th half
The on state of conductor 14, and restore the normal condition of the first semiconductor 10.
As shown in fig. 6, be DC power supply short-circuit protection fourth embodiment of the present invention schematic diagram, from figure it is found that
For the first semiconductor 10 in Fig. 1 is changed to the 6th semiconductor 15, other circuit frameworks are all identical as Fig. 1；6th semiconductor 15
The second semiconductor of emitter-base bandgap grading E connection 11 source S and DC power supply 100 negative electricity end, the base stage B connection of the 6th semiconductor 15
The other end of two resistance 13, the other end of first resistor 12 connect circuit negative electricity end V-, the collector C connection electricity of the 6th semiconductor 15
Road negative electricity end V-, the base stage B of the 6th semiconductor 15 of drain D connection of the second semiconductor 11 and another-end of second resistance 13,
Remaining circuit connection is all identical as Fig. 1, and without repeating, the 6th semiconductor 15 is N-type transistor.
As shown in fig. 6, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 positive terminal be powered at circuit positive terminal V+ and second resistance 13-end, another-end of second resistance 13 is connected to the 6th
The base stage B of semiconductor 15, emitter-base bandgap grading E and collector the C conducting of the 6th semiconductor 15 at this time, the supply current of DC power supply 100 is from straight
The positive terminal in galvanic electricity source 100 is to circuit positive terminal V+, positive terminal and negative electricity end through overload 200, reaches the 6th semiconductor 15
Collector C and circuit negative electricity end V-, then reach the emitter-base bandgap grading E of the 6th semiconductor 15, and return to the negative electricity end of DC power supply 100, and
Reach the powered operation of DC power supply 100, because the collector C of the 6th semiconductor 15 is connected with emitter-base bandgap grading E, the second semiconductor 11
Gate G be connected with source S, therefore the drain D of the second semiconductor 11 and source S are open-circuit condition, do not influence DC power supply 100
Powered operation.
As shown in fig. 6, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection are as follows: DC power supply at this time
100 positive terminal is powered at circuit positive terminal V+ and short-circuit conductor reaches circuit negative electricity end V-, the collection of equivalent 6th semiconductor 15
Pole C and the other end of first resistor 12 directly connect the positive terminal of DC power supply 100, and positive voltage is arrived by first resistor 12 at this time
Up to the gate G of the second semiconductor 11, the then drain D of the second semiconductor 11 and source S conducting, because the second semiconductor 11 is drawn
Pole D and source S conducting, emitter-base bandgap grading E and base stage the B conducting of the 6th semiconductor 15 at this time, and make the collector C of the 6th semiconductor 15 and penetrate
Pole E open circuit, and terminate short circuit current by the 6th semiconductor 15 collector C to emitter-base bandgap grading E generation, to reach protection DC power supply
100 purpose；If desired the on state of the second semiconductor 11 is released, short-circuit conductor need to only be removed, the second half can be released
The on state of conductor 11, and restore the normal condition of the 6th semiconductor 15.
As shown in fig. 7, be the 5th embodiment of DC power supply short-circuit protection of the present invention schematic diagram, from figure it is found that
For the first semiconductor 10 in Fig. 1 is changed to the 7th semiconductor 16, other circuit frameworks are all identical as Fig. 1；7th semiconductor 16
The second semiconductor of emitter-base bandgap grading E connection 11 source S and DC power supply 100 negative electricity end, the gate G connection of the 7th semiconductor 16
One end of the other end of two resistance 13, second resistance 13 connects circuit positive terminal V+, the collector C connection circuit of the 7th semiconductor 16
Negative electricity end V-, the gate G of the 7th semiconductor 16 of drain D connection of the second semiconductor 11, remaining circuit connection is all identical as Fig. 1,
Without repeating, the 7th semiconductor 16 is N-type insulation gate bipolar transistor.
As shown in fig. 7, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 positive terminal be powered at circuit positive terminal V+ and second resistance 13-end, another-end of second resistance 13 is connected to the 7th
The gate G of semiconductor 16, emitter-base bandgap grading E and collector the C conducting of the 7th semiconductor 16 at this time, the supply current of DC power supply 100 is from straight
The positive terminal in galvanic electricity source 100 is to circuit positive terminal V+, positive terminal and negative electricity end through overload 200, reaches the 7th semiconductor 16
Collector C and circuit negative electricity end V-, then reach the emitter-base bandgap grading E of the 7th semiconductor 16, and return to the negative electricity end of DC power supply 100, and
Reach the powered operation of DC power supply 100, because the collector C of the 7th semiconductor 16 is connected with emitter-base bandgap grading E, the second semiconductor 11
Gate G be connected with source S, therefore the drain D of the second semiconductor 11 and source S are open-circuit condition, do not influence DC power supply 100
Powered operation.
As shown in fig. 7, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection are as follows: DC power supply at this time
100 positive terminal is powered at circuit positive terminal V+ and short-circuit conductor reaches circuit negative electricity end V-, the collection of equivalent 7th semiconductor 16
Pole C and the other end of first resistor 12 directly connect the positive terminal of DC power supply 100, and positive voltage is by first resistor 12 at this time
Separately-end reaches the gate G of the second semiconductor 11, then the drain D of the second semiconductor 11 and source S conducting, because the second half lead
The drain D and source S of body 11 are connected, and the emitter-base bandgap grading E of the 7th semiconductor 16 is connected with gate G at this time, and makes the 7th semiconductor 16
Collector C and emitter-base bandgap grading E open circuit, and terminate short circuit current by the 7th semiconductor 16 collector C to emitter-base bandgap grading E generation, with reach protect
The purpose of DC power supply 100；If desired the on state for releasing the second semiconductor 11 need to only remove short-circuit conductor, can release
The on state of second semiconductor 11, and restore the normal condition of the 7th semiconductor 16.
It can be by the first semiconductor shown in FIG. 1 for the demand of practical application according to the narration of above operating principle
10 and second semiconductor 11 change be two N-type transistors or two N-types insulate gate bipolar transistors, function and behaviour simultaneously
It is identical as the circuit function and operating principle above-mentioned for being constituted the first semiconductor 10 and the second semiconductor 11 to make principle, and
Not from limit.
As shown in figure 8, be DC power supply short-circuit protection sixth embodiment of the present invention schematic diagram, from figure it is found that
For the 4th semiconductor 21 in Fig. 4 is changed to the 8th semiconductor 24, other circuit frameworks are all identical as Fig. 4；8th semiconductor 24
Emitter-base bandgap grading E connection third semiconductor 20 source S, the base stage B connection 3rd resistor 22 of the 8th semiconductor 24 it is another-end, third
Resistance 22-end connection circuit positive terminal V+, one end of the 4th resistance 23 of collector C connection of the 8th semiconductor 24 and third half
The other end of the gate G of conductor 20, the 4th resistance 23 connect circuit negative electricity end V-, the collector C connection third of the 8th semiconductor 24
The gate G of semiconductor 20, remaining circuit connection is all identical as Fig. 4, and without repeating, the 8th semiconductor 24 is P-type transistor.
As shown in figure 8, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 negative electricity end is powered at another-end of circuit negative electricity end V- and the 4th resistance 23, the 4th resistance 23-end is connected to third
The gate G of semiconductor 20, the positive terminal of DC power supply 100 are powered at the source S of third semiconductor 20, at this time third semiconductor 20
Source S and drain D conducting, the supply current of DC power supply 100 is from the positive terminal of DC power supply 100 to third semiconductor 20
Source S and drain D arrive circuit positive terminal V+, and positive terminal and negative electricity end through overload 200 reach circuit negative electricity end V-, and return
To the negative electricity end of DC power supply 100, and reach the powered operation of DC power supply 100, because of the drain D of third semiconductor 20 and source
Pole S conducting, so the base stage B of the 8th semiconductor 24 is connected with emitter-base bandgap grading E, therefore the collector C and emitter-base bandgap grading E of the 8th semiconductor 24 are to open
Line state does not influence the powered operation of DC power supply 100.
As shown in figure 8, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection at this time are as follows: circuit positive electricity
End V+ and the circuit negative electricity end both ends V- connect short-circuit conductor be equal third conductor 20 drain D and 3rd resistor 22-end directly
The negative electricity end of DC power supply 100 is connected, negative voltage reaches the base stage B of the 8th semiconductor 24 by 3rd resistor 22 at this time, then
The collector C and emitter-base bandgap grading E of 8th semiconductor 24 are connected, because the collector C and emitter-base bandgap grading E of the 8th semiconductor 24 be connecteds, third is partly at this time
The source S of conductor 20 is connected with gate G, and make third semiconductor 20 drain D and source S open circuit, and terminate short circuit current by
The source S of third semiconductor 20 to drain D generation, with achieve the purpose that protect DC power supply 100；If desired the 8th half is released
The on state of conductor 24 need to only remove short-circuit conductor, can release the on state of the 8th semiconductor 24, and restore third
The normal condition of semiconductor 20.
As shown in figure 9, be the 7th embodiment of DC power supply short-circuit protection of the present invention schematic diagram, from figure it is found that
For the third semiconductor 20 in Fig. 4 is changed to the 9th semiconductor 25, other circuit frameworks are all identical as Fig. 4；9th conductor 25
The source S of the 4th semiconductor 21 of emitter-base bandgap grading E connection, one end of the 4th resistance 23 of gate G connection of the 9th semiconductor 25, the 4th electricity
The other end of resistance 23 connects circuit negative electricity end V-, the collector C connection circuit positive terminal V+ of the 9th semiconductor 25, remaining circuit connection
All identical as Fig. 4, without repeating, the 9th semiconductor 25 is p-type insulation gate bipolar transistor.
As shown in figure 9, when 100 pairs of DC power supply loads 200 execute powered operation, operating principle are as follows: DC power supply
100 negative electricity end is powered at another-end of circuit negative electricity end V- and the 4th resistance 23, the 4th resistance 23-end is connected to the 9th
The gate G of semiconductor 25, the positive terminal of DC power supply 100 are powered at the emitter-base bandgap grading E of the 9th semiconductor 25, at this time the 9th semiconductor 25
Emitter-base bandgap grading E and collector C conducting, the supply current of DC power supply 100 is from the positive terminal of DC power supply 100 to the 9th semiconductor 25
Emitter-base bandgap grading E and collector C arrives circuit positive terminal V+, and positive terminal and negative electricity end through overload 200 reach circuit negative electricity end V-, and return
To the negative electricity end of DC power supply 100, and reach the powered operation of DC power supply 100 because the collector C of the 9th semiconductor 25 with penetrate
Pole E conducting, so the gate G of the 4th semiconductor 21 is connected with source S, therefore the drain D of the 4th semiconductor 21 is to open with source S
Line state does not influence the powered operation of DC power supply 100.
As shown in figure 9, when circuit positive terminal V+ of the invention and the circuit negative electricity end both ends V- connect short-circuit conductor, then again
DC power supply 100 is connected, DC power supply 100 is powered at short-circuit conductor, the operating principle of short-circuit protection at this time are as follows: circuit positive electricity
End V+ and the circuit negative electricity end both ends V- connect short-circuit conductor be equal 9th semiconductor 25 collector C and 3rd resistor 22-end directly
The negative electricity end of DC power supply 100 is connected, negative voltage reaches the gate G of the 4th semiconductor 21 by 3rd resistor 22 at this time, in
It is drain D and the source S conducting of the 4th semiconductor 21, because of the drain D of the 4th semiconductor 21 and source S conducting, at this time the 9th
The emitter-base bandgap grading E of semiconductor 25 is connected with gate G, and the collector C and emitter-base bandgap grading E of the 9th semiconductor 25 is made to open a way, and terminates short circuit current
By the generation of the emitter-base bandgap grading E to collector C of the 9th semiconductor 25, to achieve the purpose that protect DC power supply 100；If desired the 4th is released
The on state of semiconductor 21 need to only remove short-circuit conductor, can release the on state of the 4th semiconductor 21, and restore the
The normal condition of nine semiconductors 25.
Embodiment described above is only to absolutely prove the preferred embodiment of the invention lifted, protection scope of the present invention
It is without being limited thereto.Those skilled in the art, made equivalent substitute or transformation on the basis of the present invention, all of the invention
In protection scope.Protection scope of the present invention is subject to the claims applied for a patent.
Claims (10)
1. a kind of DC power supply short-circuit protection provides load short circuits in the power supply process to a circuit for a DC power supply
Defencive function, which is characterized in that the circuit has a circuit positive terminal and a circuit negative electricity end, and the DC power supply short circuit is protected
Protection unit includes:
One first semiconductor has a drain, a source electrode and a gate, and it is negative that the drain of first semiconductor connects the circuit
Electric end；
One second semiconductor, has a drain, a source electrode and a gate, and the drain of second semiconductor connects described the first half
The gate of conductor, the source electrode of second semiconductor connect the source electrode of first semiconductor；
One first resistor has two ends, and one end connects the gate of second semiconductor, and it is negative that the other end connects the circuit
Electric end；And
One second resistance has two ends, and one end connects the circuit positive terminal, and the other end connects second semiconductor
Drain.
2. DC power supply short-circuit protection as described in claim 1, which is characterized in that first semiconductor is N channel
Metal oxide semiconductor field effect transistor, N-type transistor, N-type insulation gate bipolar transistor and combinations thereof.
3. DC power supply short-circuit protection as described in claim 1, which is characterized in that second semiconductor is N channel
Metal oxide semiconductor field effect transistor, N-type transistor, N-type insulation gate bipolar transistor and combinations thereof.
4. DC power supply short-circuit protection as described in claim 1, which is characterized in that the source electrode of first semiconductor with
The source electrode of second semiconductor connects the negative electricity end of the DC power supply, and the circuit positive terminal connects the DC power supply
Positive terminal.
5. DC power supply short-circuit protection as described in claim 1, which is characterized in that described in the circuit positive terminal connection
The positive terminal of load, circuit negative electricity end connect the negative electricity end of the load.
6. a kind of DC power supply short-circuit protection is protected for a DC power supply to offer load short circuits in a circuit power supply process
Protective function, which is characterized in that the circuit has a circuit positive terminal and a circuit negative electricity end, the DC power supply short-circuit protection
Device includes:
One third semiconductor, has a drain, a source electrode and a gate, and the drain of the third semiconductor is connecting the circuit just
Electric end；
One the 4th semiconductor, has a drain, a source electrode and a gate, and the drain of the 4th semiconductor connects the third half
The source electrode of the gate of conductor, the 4th semiconductor connects the source electrode of the third semiconductor；
One 3rd resistor has two ends, and one end connects the circuit positive terminal, and the other end connects the 4th semiconductor
Gate；And
One the 4th resistance has two ends, and one end connects the drain of the 4th semiconductor, and it is negative that the other end connects the circuit
Electric end.
7. DC power supply short-circuit protection as claimed in claim 6, which is characterized in that the third semiconductor is P channel
Metal oxide semiconductor field effect transistor, P-type transistor, p-type insulation gate bipolar transistor and combinations thereof.
8. DC power supply short-circuit protection as claimed in claim 6, which is characterized in that the 4th semiconductor is P channel
Metal oxide semiconductor field effect transistor, P-type transistor, p-type insulation gate bipolar transistor and combinations thereof.
9. DC power supply short-circuit protection as claimed in claim 6, which is characterized in that the source electrode of the third semiconductor with
The source electrode of 4th semiconductor connects the positive terminal of the DC power supply, and circuit negative electricity end connects the DC power supply
Negative electricity end.
10. DC power supply short-circuit protection as claimed in claim 6, which is characterized in that the circuit positive terminal connects institute
The positive terminal of load is stated, circuit negative electricity end connects the negative electricity end of the load.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710347664.9A CN108963968A (en) | 2017-05-17 | 2017-05-17 | DC power supply short-circuit protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710347664.9A CN108963968A (en) | 2017-05-17 | 2017-05-17 | DC power supply short-circuit protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108963968A true CN108963968A (en) | 2018-12-07 |
Family
ID=64461535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710347664.9A Pending CN108963968A (en) | 2017-05-17 | 2017-05-17 | DC power supply short-circuit protection |
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| Country | Link |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153413A (en) * | 1995-09-29 | 1997-07-02 | 摩托罗拉公司 | Protection element and method for protecting circuit |
| CN1158673A (en) * | 1994-09-27 | 1997-09-03 | Npr技术有限公司 | Power cut-off device |
| CN1605141A (en) * | 2001-12-17 | 2005-04-06 | 提莱波斯公司 | A polarity protection implemented with a MOSFET |
| US20140327466A1 (en) * | 2013-05-02 | 2014-11-06 | Chicony Power Technology Co., Ltd | Over voltage protection testing apparatus |
| CN107346901A (en) * | 2016-05-05 | 2017-11-14 | 卢昭正 | Cell discharge protective device |
-
2017
- 2017-05-17 CN CN201710347664.9A patent/CN108963968A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1158673A (en) * | 1994-09-27 | 1997-09-03 | Npr技术有限公司 | Power cut-off device |
| CN1153413A (en) * | 1995-09-29 | 1997-07-02 | 摩托罗拉公司 | Protection element and method for protecting circuit |
| CN1605141A (en) * | 2001-12-17 | 2005-04-06 | 提莱波斯公司 | A polarity protection implemented with a MOSFET |
| US20140327466A1 (en) * | 2013-05-02 | 2014-11-06 | Chicony Power Technology Co., Ltd | Over voltage protection testing apparatus |
| CN107346901A (en) * | 2016-05-05 | 2017-11-14 | 卢昭正 | Cell discharge protective device |
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