CN108963750A - A kind of VCSEL and APD integrated chip and preparation method thereof - Google Patents
A kind of VCSEL and APD integrated chip and preparation method thereof Download PDFInfo
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- CN108963750A CN108963750A CN201810791393.0A CN201810791393A CN108963750A CN 108963750 A CN108963750 A CN 108963750A CN 201810791393 A CN201810791393 A CN 201810791393A CN 108963750 A CN108963750 A CN 108963750A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
Abstract
The present invention relates to detection technology fields, disclose a kind of VCSEL and APD integrated chip and preparation method thereof, integrated chip includes signal transmitter unit, signal receiving unit, control unit and data processing unit, signal transmitter unit includes that the first signal of lamination receives structure sheaf and the first signal emitting structural layer, signal receiving unit includes that the second signal of lamination receives structure sheaf and second signal emitting structural layer, electrode on first signal emitting structural layer is electrically connected to signal transmitter unit side, form contact point, the electrode that second signal receives on structure sheaf is electrically connected to the side of signal receiving unit, form contact point, each contact point is separately connected control unit and data processing unit.First signal receives structure sheaf and second signal receives structure sheaf as APD structure sheaf, and the first signal emitting structural layer and second signal emitting structural layer are vcsel structure layer.The present invention realizes the highly integrated photoelectricity sensing system of VCSEL and APD.
Description
Technical field
The present invention relates to detection technology fields, and in particular to a kind of VCSEL and APD integrated chip and preparation method thereof.
Background technique
Since vertical cavity surface emitting laser (VCSEL) has, threshold current is low, the service life is long, modulation rate is fast, the angle of divergence
It the advantages that small, would generally be with avalanche photodide (APD) combined application in the fields such as laser radar and three-dimensional sensing.
But in current laser radar and three-dimensional detection technology field, laser and detector are respectively distributed into independent
Module cannot achieve single-chip integration.In addition, between laser and its control circuit, between detector and its reading circuit and
It cannot achieve between control circuit and reading circuit highly integrated.
Summary of the invention
For this purpose, the technical problems to be solved by the present invention are: in the prior art, laser and detector integrated level are low.
In order to solve the above technical problems, The technical solution adopted by the invention is as follows:
The embodiment of the invention provides a kind of VCSEL and APD integrated chips, comprising:
Signal transmitter unit is set on substrate, and the first signal including lamination setting receives structure sheaf and the first signal
Emitting structural layer is provided with the first top electrode and the first hearth electrode, first top electricity on the first signal emitting structural layer
Pole and first hearth electrode are respectively electrically connected to one side surface of signal transmitter unit, form the first apical grafting contact and first
Bottom contact point；
Signal receiving unit is set on the substrate, is separated in the horizontal direction with the signal transmitter unit,
Second signal including lamination setting receives structure sheaf and second signal emitting structural layer, and the second signal receives structure sheaf
On be provided with the second top electrode and the second hearth electrode, second top electrode and second hearth electrode are respectively electrically connected to described
One side surface of signal receiving unit is formed in the same plane with first apical grafting contact, first bottom contact point
Second apical grafting contact, the second bottom contact point；
Control unit is connect with first apical grafting contact and first bottom contact point, for controlling first letter
Number emitting structural floor issues laser signal to object；
Data processing unit is connect with second apical grafting contact and second bottom contact point, for the target
The reflected laser signal of object is analyzed and processed；
First optical path adjusting unit, connect with the signal transmitter unit, is used for the first signal emitting structural layer
The laser shaping of sending is parallel light emitting to the object；
Second optical path adjusting unit, connect with the signal receiving unit, for the object is reflected sharp
Light shaping is that parallel light emitting to second signal receives structure sheaf；
It is avalanche photodide (APD) that first signal, which receives structure sheaf and second signal reception structure sheaf,
Structure sheaf, the first signal emitting structural layer and the second signal emitting structural layer are vertical cavity surface emitting laser
(VCSEL) structure sheaf.
Optionally, the incidence surface of the light-emitting surface of the signal transmitter unit and the signal receiving unit is located at the substrate
The same side.
Optionally, first apical grafting contact and first bottom contact point are located at the signal transmitter unit far from light out
One side surface in face, second apical grafting contact and second bottom contact point are located at the signal receiving unit far from incidence surface
A side surface.
Optionally, described control unit is connect by indium column with first apical grafting contact, first bottom contact point, institute
Data processing unit is stated to connect by indium column with second apical grafting contact, second bottom contact point.
Optionally, the first optical path adjusting unit is first lens subassembly of the convex surface towards the signal transmitter unit；
The second optical path adjusting unit is second lens subassembly of the convex surface towards the object.
Optionally, first lens subassembly is microlens array, and second lens subassembly is Fresnel Lenses.
Optionally, the wavelength for the laser signal that the signal transmitter unit issues is more than or equal to 1400nm.Optionally, described
Avalanche photodide (APD) structure sheaf includes that the Window layer of lamination setting, uptake zone, content gradually variational area, charged region, snowslide are put
Great Qu, collector layer and contact layer；
Vertical cavity surface emitting laser (VCSEL) structure sheaf includes that the first protective layer of lamination setting, upper distribution are anti-
Present Bragg mirror, the first wall, the first current-limiting layer, active area, the second current-limiting layer, the second wall, under
Distributed-feedback Prague reflecting mirror and the second protective layer.
The embodiment of the invention also provides a kind of preparation methods of VCSEL and APD integrated chip, comprising:
Several signal transmitter units being separated and signal receiving unit, the signal transmitter unit is formed on the substrate
The first signal including lamination setting receives structure sheaf and the first signal emitting structural layer, and the signal receiving unit includes lamination
The second signal of setting receives structure sheaf and second signal emitting structural layer, wherein first signal receives structure sheaf and institute
Stating second signal and receiving structure sheaf is avalanche photodide (APD) structure sheaf, and prepared by same layer, the first signal transmitting
Structure sheaf and the second signal emitting structural layer are vertical cavity surface emitting laser (VCSEL) structure sheaf, and prepared by same layer；
The first top electrode and the first hearth electrode are formed on the first signal emitting structural layer, is connect in the second signal
It receives and forms the second top electrode and the second hearth electrode on structure sheaf；
First top electrode and first hearth electrode are electrically connected to the signal transmitter unit far from light-emitting surface
One side surface forms the first apical grafting contact and the first bottom contact point；Second top electrode and second hearth electrode are electrically connected
It is connected to a side surface of the signal receiving unit far from incidence surface, formation connects with first apical grafting contact, first bottom
Contact the second apical grafting contact and the second bottom contact point in the same plane；
First apical grafting contact, first bottom contact point are electrically connected with control unit, by second top contact
Point, second bottom contact point are connect with the data processing unit.
Optionally, further includes:
First optical path adjusting unit is set on the light-emitting surface of the signal transmitter unit；
And/or the second optical path adjusting unit is set on the incidence surface of the signal receiving unit.
Technical solution of the present invention has the advantages that
VCSEL and APD integrated chip provided in an embodiment of the present invention, signal transmitter unit and signal receiving unit are set to
On the same substrate, the mode of individual packages is separated relative to traditional detector and laser, it is provided in an embodiment of the present invention
Signal transmitter unit and signal receiving unit be in VCSEL and APD integrated chip convenient for being integrated on same mainboard, integrated level compared with
Height realizes the highly integrated photoelectricity sensing system of VCSEL and APD.And the volume of the VCSEL and APD integrated chip is reduced, it accords with
Close miniaturization trend.
Signal transmitter unit includes in the first signal reception structure sheaf of substrate superimposed layer setting and the first signal emitter junction
Structure layer, signal receiving unit include the second signal reception structure sheaf and second signal emitting structural in the setting of substrate superimposed layer
Layer, and the first top electrode and the first hearth electrode are provided on the first signal emitting structural layer, second signal receives to be set on structure sheaf
It is equipped with the second top electrode and the second hearth electrode.I other words signal transmitter unit and signal receiving unit include stacking setting
Signal receives structure sheaf and signal emitting structural layer, when preparing VCSEL the and APD integrated chip, can disposably form signal hair
It penetrates the second signal that the first signal in unit receives in structure sheaf and signal receiving unit and receives structure sheaf, can disposably be formed
The first signal emitting structural layer in signal transmitter unit and the second signal emitting structural layer in signal receiving unit.It is subsequent
The first top electrode and the first hearth electrode are set on the first signal emitting structural layer in signal transmitter unit, so that signal transmitting is single
Member realizes signal transmission function, and the second signal in signal receiving unit, which receives, is arranged the second top electrode and second on structure sheaf
Hearth electrode is achieved in signal transmitter unit and signal receiving unit so that signal receiving unit realizes signal receiving function
Integrated level, and simplify preparation process.
VCSEL and APD integrated chip provided in an embodiment of the present invention, the light-emitting surface of signal transmitter unit and the signal connect
The incidence surface for receiving unit is located at the same side of the substrate, and thus convenient for preparation, and laser is emitted on same surface and incidence.
VCSEL and APD integrated chip provided in an embodiment of the present invention, the first top electrode and the first hearth electrode are electrically connected
To signal transmitter unit far from a side surface of light-emitting surface, the first apical grafting contact and the first bottom contact point are formed；Second top electricity
Pole and the second hearth electrode are respectively electrically connected to a side surface of the signal receiving unit far from incidence surface, formed the second apical grafting contact and
Second bottom contact point.The setting of electrode contact point helps further to integrate it in signal transmitter unit and signal receiving unit
His structure, mainly circuit structure, helps to realize the height of signal transmitter unit and signal receiving unit and respective circuit structure
Degree is integrated.In addition, the electrode contact point of signal transmitter unit and signal receiving unit is all set in far from laser-emitting face and enters
The side for penetrating face which thereby enhances the aperture opening ratio of the VCSEL and APD integrated chip, is conducive to improve laser flux.
VCSEL and APD integrated chip provided in an embodiment of the present invention, the first apical grafting contact, the first bottom contact point and
Two apical grafting contacts, the second bottom contact point are generally aligned in the same plane.That is, when signal transmitter unit passes through the first apical grafting contact and the first bottom
The corresponding circuit structure connection in contact point, and when signal receiving unit passes through the second apical grafting contact and the second bottom contact point
When corresponding circuit structure connects, two kinds of circuit structures also are located on same plane, can be integrated in same mainboard, be mentioned
Integrated level between high each circuit structure.
VCSEL and APD integrated chip provided in an embodiment of the present invention, the first apical grafting contact and the first bottom contact point and control
Unit connection, control unit issue laser signal for controlling the first signal transmitter unit, and the second apical grafting contact and the second bottom connect
Contact is connect with data processing unit, and the object that data processing unit is used to receive signal receiving unit is reflected
Laser signal carries out processing analysis.Control unit and data processing unit can integrate in same mainboard as a result, and reduce
Parasitic capacitance, improves the pulse modulation frequency of signal transmitter unit.
VCSEL and APD integrated chip provided in an embodiment of the present invention is connected with first on the light-emitting surface of signal transmitter unit
Optical path adjusting unit, the first optical path adjusting unit are first lens subassembly of the convex surface towards signal transmitter unit；Signal receives single
The second optical path adjusting unit is connected on the incidence surface of member, the second optical path adjusting unit is second lens of the convex surface towards object
Component.What the setting of convex surface towards the first lens subassembly of signal transmitter unit helped to launch signal transmitter unit swashs
Light shaping is the laser of exiting parallel, improves high collimation when laser projection to object, and most light are shone
It is incident upon object, and is improved by the ratio of the reflected laser of object.
Convex surface towards object the second lens subassembly setting, facilitate be by the reflected laser shaping of object
Directional light arriving signal receiving unit, reflected major part laser can be received by signal receiving module, be effectively improved
The utilization rate of laser, while reducing the power of the VCSEL and APD integrated chip, reduce power consumption.
VCSEL and APD integrated chip provided in an embodiment of the present invention, the wavelength for the laser signal that signal transmitter unit issues
More than or equal to 1400nm.According to human eye physiology and optical texture the study found that light of the wavelength more than or equal to 1400nm can not be saturating
It is incident upon in retina, human eye will not be damaged using higher power output.Therefore it is more than or equal to using wavelength
The long wavelength signals transmitting unit of 1400nm is as laser light source, it can be achieved that farther detection range, higher resolution ratio and peace
Quan Xing.
The preparation method of VCSEL and APD integrated chip provided in an embodiment of the present invention, be formed on the substrate first it is several that
This signal transmitter unit separated and signal receiving unit, signal transmitter unit include that the first signal of lamination setting receives structure
Layer and the first signal emitting structural layer, signal receiving unit include that the second signal of lamination setting receives structure sheaf and second signal
Emitting structural layer；Then the first top electrode and the first hearth electrode are formed on the first signal emitting structural layer, is connect in second signal
It receives and forms the second top electrode and the second hearth electrode on structure sheaf；Then the first top electrode and the first hearth electrode are electrically connected to signal
A side surface of the transmitting unit far from light-emitting surface forms the first apical grafting contact and the first bottom contact point；By the second top electrode and
Two hearth electrodes are electrically connected to a side surface of the signal receiving unit far from incidence surface, form the second apical grafting contact and the contact of the second bottom
Point；Finally the first apical grafting contact and the first bottom contact point are electrically connected with control unit, the second apical grafting contact and the second bottom are connect
Contact is connect with data processing unit.
In above-mentioned preparation method, signal transmitter unit and signal receiving unit are formed on the same substrate, relative to biography
The detector and laser of system separate the mode of individual packages, VCSEL the and APD integrated chip that the embodiment of the present invention prepares
Convenient for being integrated on same mainboard, integrated level is higher for middle signal transmitter unit and signal receiving unit, reduce the VCSEL and
The volume of APD integrated chip meets miniaturization trend.
In addition, can disposably form the first signal in signal transmitter unit when preparing VCSEL the and APD integrated chip
The second signal received in structure sheaf and signal receiving unit receives structure sheaf, can disposably form the in signal transmitter unit
Second signal emitting structural layer in one signal emitting structural layer and signal receiving unit.Subsequent in signal transmitter unit
The first top electrode and the first hearth electrode are set on one signal emitting structural layer, so that signal transmitter unit realizes that signal emits function
Can, the second signal in signal receiving unit, which receives, is arranged the second top electrode and the second hearth electrode on structure sheaf, so that signal
Receiving unit realizes signal receiving function, is achieved in the integrated level of signal transmitter unit and signal receiving unit, and simplify
Preparation process.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1-Fig. 9 is the preparation technology flow chart of VCSEL and APD integrated chip provided in an embodiment of the present invention；
Appended drawing reference:
1- substrate；
2- signal transmitter unit；The first signal of 21- receives structure sheaf；211- light hole；22- the first signal emitting structural
Layer；The first protective layer of 221-；The upper distributed-feedback Prague reflecting mirror of 222-；The first wall of 223-；The first current limit of 224-
Layer；225- active area；The second current-limiting layer of 226-；The second wall of 227-；Distributed-feedback Prague reflecting mirror under 228-；
The second protective layer of 229-；The first top electrode of 2210-；The first hearth electrode of 2211-；
3- signal receiving unit；31- second signal receives structure sheaf；311- Window layer；The uptake zone 312-；313- component is gradually
Become area；314- charged region；315- snowslide amplification region；316- collector layer；317- contact layer；The second top electrode of 318-；319-
Two hearth electrodes；32- second signal emitting structural layer；
Barrier layer among 4-；5- buffer layer；6- polyimide resin；7- anti-reflection film；8- control unit；9- data processing list
Member；10- indium column；11- the first optical path adjusting unit；12- the second optical path adjusting unit.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second " are only
For descriptive purposes, it is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the connection inside two elements, can be wireless connection, be also possible to wired connection.For those of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
Embodiment 1
The embodiment of the invention provides a kind of VCSEL and APD integrated chips, as shown in figs 1-9, including substrate 1, substrate 1
On be provided with signal transmitter unit 2 that is being distributed in the horizontal direction and being separated and signal receiving unit 3；Signal transmitter unit
2 include in the first signal reception structure sheaf 21 of 1 superimposed layer of substrate setting and the first signal emitting structural layer 22；Signal receives single
Member 3 includes the second signal reception structure sheaf 31 and second signal emitting structural layer 32 in the setting of 1 superimposed layer of substrate.
In the present embodiment, the first signal emitting structural layer 22 in signal transmitter unit 2 and in signal receiving unit 3
Binary signal emitting structural layer 32 is preferably vertical cavity surface emitting laser (VCSEL) structure.The first letter in signal transmitter unit 2
Number receiving the second signal in structure sheaf 21 and signal receiving unit 3 and receiving structure sheaf 31 is preferably avalanche photodide detection
Device (APD) structure.
Vertical cavity surface emitting laser has threshold current low, long, stable single without calamity light injury (COD), service life
The advantages such as wavelength works, modulation rate is fast, the angle of divergence is small, coupling efficiency is low, and beam quality is much higher than edge-emitting laser
(EEL) and LED, this makes vertical cavity surface emitting laser in high speed optical communication, laser radar and three-dimensional sensing and imaging etc.
Application value with higher in technical field.
Avalanche photodiode detector (APD) has many advantages, such as that high sensitivity, small in size and speed are fast, according to material
The response wave band of selection, avalanche photodide can reach 900nm-1700nm, and peak wavelength is in 1550nm, suitable for height
Speed, highly sensitive Photoelectric Detection, are widely used in long range optical communication field.
Therefore, select vertical cavity surface emitting laser and avalanche photodiode detector respectively as signal emitting structural
Layer and signal receive structure sheaf, and the excellent service performance of the VCSEL and APD integrated chip has been effectively ensured.
It should be noted that signal transmitter unit 2 shown in figure is only a vertical cavity surface emitting laser, actually answer
Used time, signal transmitter unit 2 may include multiple vertical cavity surface emitting lasers, as vertical cavity surface emitting laser arrays.
Likewise, signal receiving unit 3 shown in figure is only two avalanche optoelectronics two on a vertical cavity surface emitting laser periphery
Pole pipe, when practical application, signal receiving unit 3 may include multiple avalanche photodides, as avalanche photodide battle array
Column.
When preparing VCSEL the and APD integrated chip, usually it is formed simultaneously on substrate 1 in signal transmitter unit 2
First signal receives the second signal in structure sheaf 21 and signal receiving unit 3 and receives structure sheaf 31, then is formed simultaneously on it
The first signal emitting structural layer 22 in signal transmitter unit 2 and the second signal emitting structural layer 32 in signal receiving unit 3.
It is split finally by chemical wet etching technology to being formed by structure sheaf on substrate 1, forms the signal transmitter unit 2 separated
With signal receiving unit 3.
In the present embodiment, the first top electrode 2210 and the first hearth electrode are provided on the first signal emitting structural layer 22
2211；Second signal receives and is provided with the second top electrode 318 and the second hearth electrode 319 on structure sheaf 31.That is, emitting in signal single
In member 2, actually playing a role is the first signal emitting structural layer 22, passes through the first top electrode 2210 and the first hearth electrode 2211
Electric signal transmission can be achieved signal transmitter unit 2 signal transmission function.In signal receiving unit 3, practical play is made
Structure sheaf 31 is received for second signal, can be realized by the electric signal transmission of the second top electrode 318 and the second hearth electrode 319
The signal receiving function of signal receiving unit 3.
VCSEL and APD integrated chip provided in an embodiment of the present invention, signal transmitter unit 2 and signal receiving unit 3 are arranged
In on the same substrate 1, separating the mode of individual packages relative to traditional detector and laser, the embodiment of the present invention is provided
VCSEL and APD integrated chip in signal transmitter unit 2 and signal receiving unit 3 convenient for being integrated on same mainboard, integrate
Degree is higher, reduces the volume of the VCSEL and APD integrated chip, meets miniaturization trend.
As a kind of optional embodiment, in the present embodiment, vertical cavity surface emitting laser includes the first of lamination setting
It is protective layer 221, upper distributed-feedback Prague reflecting mirror 222 (DBR), the first wall 223, the first current-limiting layer 224, active
Area 225, the second current-limiting layer 226, the second wall 227, lower distributed-feedback Prague reflecting mirror 228 (DBR) and second
Protective layer 229.Wherein, the material of above layers is as shown in the table:
As a kind of optional embodiment, in the present embodiment, avalanche photodiode detector includes the window of lamination setting
Mouth floor 311, uptake zone 312, content gradually variational area 313, charged region 314, snowslide amplification region 315, collector layer 316 and contact layer
317.Wherein, above layers material is as shown in the table:
As a kind of optional embodiment, in the present embodiment, the contact layer 317 and vertical cavity surface of avalanche photodide are sent out
The first protective layer 221 for penetrating laser is adjacent, is provided with intermediate barrier layer 4 between the two, and intermediate barrier layer 4 is preferably 500nm
I-InP material.
As a kind of optional embodiment, in the present embodiment, substrate 1 is P-InP material, doping concentration is 2 ×
1018cm-3.Substrate 1 is adjacent with the Window layer 311 of avalanche photodide, is additionally provided with buffer layer 5, buffer layer 5 between the two
The P-InP material of preferably 500nm, doping concentration are 3 × 1018cm-3。
Wherein, the first top electrode 2210 is N electrode, be can be set between second in the first signal emitting structural layer 22
On interlayer 227, the first hearth electrode 2211 is P electrode, and the first interval in the first signal emitting structural layer 22 can be set
On layer 223.Second top electrode 318 is N electrode, be can be set on the contact layer 317 in second signal reception structure sheaf 31,
Second hearth electrode 319 is P electrode, be can be set on buffer layer 5.
As a kind of optional embodiment, in the present embodiment, the light-emitting surface and signal receiving unit 3 of signal transmitter unit 2
Incidence surface be located at the same side of substrate 1.It is further preferred that the light-emitting surface of signal transmitter unit 2 is located at the reception of the first signal
Close to the side of substrate 1, the incidence surface of signal receiving unit 3 is located at second signal and receives structure sheaf 31 close to substrate structure sheaf 21
1 side.It is also spaced by the first signal due to the first signal emitting structural layer 22 in signal transmitter unit 2 and between substrate 1
Structure sheaf 21 is received, therefore, in the present embodiment, is also provided in the first signal reception structure sheaf 21 and extends to the first signal hair
The light hole 211 of structure sheaf 22 is penetrated, as a result, laser can be launched from light hole 211.
As a kind of optional embodiment, in the present embodiment, substrate 1 with a thickness of 0-20 microns, thus can reduce to going out
The blocking for penetrating laser and incident laser avoids blocked up substrate 1 from will affect Effect on Detecting.
As a kind of optional embodiment, in the present embodiment, anti-reflection film 7 is additionally provided on substrate 1, anti-reflection film 7 is preferred
It is made of silicon nitride material, can not only increase the incident efficiency of light extraction efficiency and reflected light, and help that signal is protected to connect
The material for receiving structure sheaf is not affected by the external environment.
As a kind of optional embodiment, in the present embodiment, the first top electrode 2210 and the first hearth electrode 2211 electricity respectively
Signal transmitter unit 2 is connected to far from a side surface of light-emitting surface, forms the first apical grafting contact and the first bottom contact point；Second
Top electrode 318 and the second hearth electrode 319 are respectively electrically connected to a side surface of the signal receiving unit 3 far from incidence surface, form the
Two apical grafting contacts and the second bottom contact point.
Specifically, the first top electrode 2210, the first hearth electrode 2211, the second top electrode 318 and the second hearth electrode 319 divide
Not Cai Yong climbing mode formed on the second protective layer 229 in signal emitting structural layer the first apical grafting contact, the first bottom contact
Point, the second apical grafting contact and the second bottom contact point.
The setting of electrode contact point helps further to integrate other in signal transmitter unit 2 and signal receiving unit 3
Structure, mainly circuit structure help to realize the height of signal transmitter unit 2 and signal receiving unit 3 and respective circuit structure
Degree is integrated.In addition, the electrode contact point of signal transmitter unit 2 and signal receiving unit 3 be all set in far from laser-emitting face and
The side of the plane of incidence which thereby enhances the aperture opening ratio of the VCSEL and APD integrated chip, is conducive to improve laser flux.
In addition, each device structure layer is affected in order to prevent, the outside of signal transmitter unit 2 and signal receiving unit and
Top is provided with silicon nitride protective layer, i.e., interval is by nitrogenizing between the conductive slope between electrode and contact point section and device architecture
Silicon protective layer.
Preferably, in the present embodiment, the first apical grafting contact, the first bottom contact point and the second apical grafting contact, the second bottom are connect
Contact is generally aligned in the same plane.Signal in signal transmitter unit 2 and signal receiving unit 3 receives structure sheaf and signal emitting structural
Layer is same layer preparation, and consistency of thickness, therefore, side of the signal transmitter unit 2 far from light-emitting surface and signal receiving unit 3 are remote
It is in the same plane from the side of incidence surface, that is, the first apical grafting contact, the first bottom contact point and the second apical grafting contact,
Two bottoms contact point are also in same plane.
It is connected when signal transmitter unit 2 passes through the first apical grafting contact circuit structure corresponding with the first bottom contact point,
And when signal receiving unit 3 is connected by the second apical grafting contact circuit structure corresponding with the second bottom contact point, two
Kind circuit structure also is located on same plane, can be integrated in same mainboard, is improved integrated between each circuit structure
Degree.
As a kind of optional embodiment, in the present embodiment, the first apical grafting contact and the first bottom contact point and control unit 8
Connection, control unit 8 issue laser signal for controlling the first signal transmitter unit 2.Second apical grafting contact and the contact of the second bottom
Point is connect with data processing unit 9, and the object that data processing unit 9 is used to receive signal receiving unit 3 reflects
Laser signal carry out processing analysis.Control unit 8 and data processing unit 9 can integrate in same mainboard as a result, and
Parasitic capacitance is reduced, the pulse modulation frequency of signal transmitter unit 2 is improved.
Specifically, the connection type between contact point and control unit 8 and data processing unit 9 is preferably that indium column 10 connects
It connects.Since indium electric conductivity is stronger, using indium column as the connection material between contact point and control unit, data processing unit
Material, improves the stability of the integrated chip.
As a kind of optional embodiment, in the present embodiment, the first optical path is connected on the light-emitting surface of signal transmitter unit 2
Unit 11 is adjusted, the first optical path adjusting unit 11 is first lens subassembly of the convex surface towards signal transmitter unit 2；Signal receives single
The second optical path adjusting unit 12 is connected on the incidence surface of member 3, and the second optical path adjusting unit 12 is convex surface towards the of object
Two lens subassemblies.
The setting of convex surface towards the first lens subassembly of signal transmitter unit 2 helps to launch signal transmitter unit 2
The laser shaping gone is the laser of exiting parallel, improves high collimation when laser projection to object, so that most light
Object can be exposed to, and is improved by the ratio of the reflected laser of object.
Convex surface towards object the second lens subassembly setting, facilitate be by the reflected laser shaping of object
Directional light arriving signal receiving unit 3, reflected major part laser can be received by signal receiving module, be effectively improved
The utilization rate of laser, while reducing the power of the VCSEL and APD integrated chip, reduce power consumption.
Wherein, when signal transmitter unit 2 is vertical cavity surface emitting laser arrays, the first optical path adjusting unit 11 is corresponding
It can be microlens array, when signal receiving unit 3 is avalanche photodiode array, the second optical path adjusting unit 12 is corresponding can
For Fresnel Lenses.It should be noted that Fresnel Lenses mentioned here is the peripheral annular knot of traditional Fresnel Lenses
The convex lens of structure, center is substituted by above-mentioned microlens array.
As a kind of optional embodiment, in the present embodiment, the wavelength for the laser signal that signal transmitter unit 2 issues is greater than
Equal to 1400nm.According to human eye physiology and optical texture the study found that light of the wavelength more than or equal to 1400nm can not be transmitted through
In retina, human eye will not be damaged using higher power output.Therefore it is more than or equal to using wavelength
The long wavelength signals transmitting unit 2 of 1400nm is as laser light source, it can be achieved that farther detection range, higher resolution ratio and peace
Quan Xing.
It is further preferred that the wavelength of laser signal is 1550nm.This is because the laser of 1550nm wavelength is free sky
Between optical communication (FSO) important light source, can propagate over long distances in air, be conducive to eliminate harsh weather influence, and
It avoids damaging human eye.
Embodiment 2
The embodiment of the invention provides a kind of preparation methods of VCSEL and APD integrated chip, comprising the following steps:
Step S21, several signal transmitter units 2 being separated and signal receiving unit 3, signal are formed on substrate 1
Transmitting unit 2 includes that the first signal of lamination setting receives structure sheaf 21 and the first signal emitting structural layer 22, and signal receives single
Member 3 includes that the second signal of lamination setting receives structure sheaf 31 and second signal emitting structural layer 32, wherein first signal
Receiving structure sheaf 21 and the second signal and receiving structure sheaf 31 is avalanche photodide (APD) structure sheaf, and same layer system
Standby, the first signal emitting structural layer 22 and the second signal emitting structural layer 32 are vertical cavity surface emitting laser
(VCSEL) structure sheaf, and prepared by same layer.
Specifically, step S21 includes:
Step S211, the signal that lamination setting is sequentially formed on substrate 1 receives structure sheaf and signal emitting structural layer.Its
In, signal receives structure sheaf and signal emitting structural layer is preferably avalanche photodiode detector structure sheaf and vertical cavity surface hair
Penetrate laser structure layer.Specific structure and material have been described in detail in embodiment 1, and details are not described herein.
Step S212, structure sheaf is received to the signal for stacking setting and signal emitting structural layer performs etching, formed each other
The signal transmitter unit 2 and signal receiving unit 3 separated.Wherein, the signal in signal transmitter unit 2 receives structure sheaf and letter
Number emitting structural floor is respectively that the first signal receives structure sheaf 21 and the first signal emitting structural floor 22, in signal receiving unit 3
Signal to receive structure sheaf and signal emitting structural layer be respectively that second signal receives structure sheaf 31 and second signal emitting structural
Layer 32.
Preferably, it in step S211, is received in signal and is also formed with centre between structure sheaf and signal emitting structural layer
Barrier layer 4.The material type of intermediate barrier layer 4 please refers to embodiment 1.
Preferably, before step S21, further include the steps that forming buffer layer 5 on substrate 1.The material class of buffer layer 5
Type please refers to embodiment 1.
Step S22, the first top electrode 2210 and the first hearth electrode 2211 are formed on the first signal emitting structural layer 22,
Second signal receives and forms the second top electrode 318 and the second hearth electrode 319 on structure sheaf 31.
Preferably, step S22 includes:
Step S221,2210 step surface of the first top electrode and the first hearth electrode are formed on the first signal emitting structural layer 22
2211 step surfaces receive in second signal and form 319 step of 318 step surface of the second top electrode and the second hearth electrode on structure sheaf 31
Face；
Step S222, in 2210 step surface of the first top electrode, 2211 step surface of the first hearth electrode, the second top electrode 318
The first top electrode 2210, the first hearth electrode 2211, the second top electrode 318 are respectively formed on 319 step of terrace and the second hearth electrode
And second hearth electrode 319.
Step S23, the first top electrode 2210 and the first hearth electrode 2211 are electrically connected to signal transmitter unit 2 far from light out
One side surface in face forms the first apical grafting contact and the first bottom contact point；By 319 electricity of the second top electrode 318 and the second hearth electrode
It is connected to a side surface of the signal receiving unit 3 far from incidence surface, formation is contacted with first apical grafting contact, first bottom
Point the second apical grafting contact and the second bottom contact point in the same plane.
Specifically, the first top electrode 2210 and the first hearth electrode 2211 are drawn to signal transmitter unit using climbing mode
2 side surfaces far from light-emitting surface form the first apical grafting contact and the first bottom contact point；By the second top electrode 318 and the second bottom
Electrode 319 is electrically connected to a side surface of the signal receiving unit 3 far from incidence surface, forms the second apical grafting contact and the contact of the second bottom
Point.
In the present embodiment, the first apical grafting contact, the first bottom contact point, the second apical grafting contact and the second bottom contact point are respectively positioned on
Same plane.
Step S24, the first apical grafting contact and the first bottom contact point are electrically connected with control unit 8, by the second apical grafting contact
It is connect with the second bottom contact point with data processing unit 9.
That is, the first signal emitting structural layer 22 in signal transmitter unit 2 is electrically connected with control unit 8, signal is realized
The signal transmission function of transmitting unit 2, and the second signal of signal receiving unit 3 is received into structure sheaf 31 and data processing list
Member 9 is electrically connected, and realizes the signal receiving function of signal receiving unit 3.
It specifically, is to realize to interconnect by indium column 10 in step S24.
Preferably, further include step S25 after step S24: substrate 1 being carried out thinned, make its thickness less than 20 microns.By
This can reduce the blocking to shoot laser and incident laser, and blocked up substrate 1 is avoided to will affect Effect on Detecting.
Preferably, further include step S26 after step S25: receiving structure sheaf 21 in the first signal and offer and extend to the
The light hole 211 of one signal emitting structural layer 22.So that laser signal can be launched from light hole 211.
Preferably, further include step S27 after step S26: receiving a side surface shape of structure sheaf far from signal in substrate 1
At anti-reflection film 7, anti-reflection film 7 is preferably that silicon nitride material is made, and can not only increase the incident efficiency of light extraction efficiency and reflected light,
And the material for helping that signal is protected to receive structure sheaf is not affected by the external environment.
It preferably, further include step S28 after step S27: the connection setting the on the light-emitting surface of signal transmitter unit 2
One optical path adjusting unit 11, and the second optical path adjusting unit 12 of connection setting on the incidence surface of signal receiving unit 3.
In the present embodiment, the first optical path adjusting unit 11 is first lens subassembly of the convex surface towards signal transmitter unit 2；Letter
It is connected with the second optical path adjusting unit 12 on the incidence surface of number receiving unit 3, the second optical path adjusting unit 12 is convex surface towards mesh
Mark the second lens subassembly of object.The setting of convex surface towards the first lens subassembly of signal transmitter unit 2 helps to emit signal
The laser shaping that unit 2 is launched is the laser of exiting parallel, improves high collimation when laser projection to object, so that
Most light can expose to object, and improve by the ratio of the reflected laser of object.Convex surface is towards target
The setting of second lens subassembly of object helps to be that directional light arriving signal receives list by the reflected laser shaping of object
Member 3, reflected major part laser can be received by signal receiving module, effectively increase the utilization rate of laser, simultaneously
The power for reducing VCSEL the and APD integrated chip, reduces power consumption.
Wherein, when signal transmitter unit 2 is vertical cavity surface emitting laser arrays, the first optical path adjusting unit 11 is corresponding
It can be microlens array, when signal receiving unit 3 is avalanche photodiode array, the second optical path adjusting unit 12 is corresponding can
For Fresnel Lenses.It should be noted that Fresnel Lenses mentioned here is the peripheral annular knot of traditional Fresnel Lenses
The convex lens of structure, center is substituted by above-mentioned microlens array.
Preparation method provided in this embodiment, signal transmitter unit 2 and signal receiving unit 3 are formed in the same substrate 1
On, the mode of individual packages is separated relative to traditional detector and laser, the VCSEL that the embodiment of the present invention prepares and
Convenient for being integrated on same mainboard, integrated level is higher for signal transmitter unit 2 and signal receiving unit 3 in APD integrated chip, contracting
The small volume of the VCSEL and APD integrated chip, meets miniaturization trend.
In addition, the corresponding control unit 8 of signal transmitter unit 2 is interconnected by indium column 10, signal receiving unit 3 and its
Corresponding data processing unit 9 is interconnected by indium column 10, realizes the height collection between signal transmitter unit 2 and control unit 8
At realizing highly integrated between signal receiving unit 3 and data processing unit 9.Meanwhile data processing unit 9 and control
Unit 8 is in the same plane, helps to integrate the two, improves the integrated level between each circuit structure.
Embodiment 3
The embodiment of the invention provides a kind of preparation methods of VCSEL and APD integrated chip provided by above-described embodiment 2
Specific example.The following steps are included:
Step 1: buffer layer, avalanche photodide (APD) structure sheaf, intermediate potential barrier are sequentially formed on P-InP substrate
Layer and vertical cavity surface emitting laser (VCSEL) structure sheaf.Specific structure and material are the same as embodiment 1.Using double-sided overlay with
And inductively coupled plasma (ICP) dry etching method of configuration optical emission spectra (OES) function, with thick silicon nitride
(SiNX) it is used as exposure mask, the top of P-InP buffer layer is etched into, the cylindric table top of InGaAs APD is formed in front, in InP
Substrate back forms the figure of APD array and to board marker (see Fig. 1).
Step 2: etching into contact layer using silicon nitride as exposure mask using the ICP dry etching method of configuration OES function
Top, form contact electrode layer step under the N-type of APD (see Fig. 2).
Step 3: utilizing double-sided overlay and the inductively coupled plasma of configuration optical emission spectra (OES) function
(ICP) method, with silicon nitride (SiNX) it is used as exposure mask, the top of the first protective layer is etched into, forms VCSEL platform in front respectively
Face forms VCSEL light hole at the InP substrate back side and to board marker (see Fig. 2).
Step 4: using the ICP dry etching method of configuration OES function, using silicon nitride as exposure mask, etching into P-InP the
The p-type top electrode contact layer step (see Fig. 3) of VCSEL is formed on the top of one wall.
Step 5: using the ICP dry etching method of configuration OES function, using photoresist as exposure mask, etching into N-InP the
The top of two walls, formed VCSEL lower distributed-feedback Prague reflecting mirror (DBR) table top and N-type under contact electrode layer platform
Rank (see Fig. 3).
Step 6: utilizing steam-laden nitrogen wet oxidation In0.40Al0.60The first current-limiting layer of As and the second electric current limit
In in the upper and lower DBR table top of preparative layer and VCSEL0.52Al0.48As layers, form AlOXCurrent-confining apertures and optical confinement hole.
Step 7: after removing photoresist, being existed using inductively coupled plasma (ICP) chemical vapor deposition (CVD) method
SiN is deposited on the outside of APD and VCSEL table topXFilm.
Step 8: in conjunction with photoetching and wet corrosion technique, removing the P-InP buffer layer of APD and the P-InP the of VCSEL respectively
Part SiN on one wallXFilm forms P-type electrode contact surface.
Step 9: slow in the P-InP of APD in conjunction with photoetching, physical vapour deposition (PVD) (PVD) metal coating and Lift-off technique
Rush formation TiAu or AuZn electrode on the first wall of P-InP of layer and VCSEL (see Fig. 4).
Step 10: in conjunction with photoetching and wet corrosion technique, removing the second wall of N-InP of VCSEL and connecing for APD respectively
Part SiN in contact layerXFilm forms corresponding N-type electrode contact surface.
Step 11: in conjunction with photoetching and PVD metal deposit and Lift-off technique, in the second wall of N-InP of VCSEL
Form AuGeNiAu electrode with above the contact layer of APD (see Fig. 4).
Step 12: gap and the leveling of VCSEL table top are filled using polyimide resin 6 (see Fig. 5).
Step 13: photoetching, PVD metal coating and Lift-off technique are utilized, in the side wall and top shape of VCSEL and APD
At climbing electrode.The wherein N electrode difference on the second wall of P electrode and N-InP on the first wall of P-InP of VCSEL
Climb onto the peripheral side VCSEL mesa top and cylindric VCSEL table top；It P-type electrode on the P-InP buffer layer of APD and connects
N-type electrode in contact layer is climbed respectively to the inner side and outer side of ring-type APD table top.Due to VCSEL and APD mesa top and outside
There is silicon nitride protection, it is ensured that the normal work of device (see Fig. 6).
Step 14: in conjunction with photoetching and vapor deposition In and reflow soldering process, in the P-InP buffer layer of APD and the P- of VCSEL
On TiAu the or AuZn electrode of the first wall of InP, on the contact layer of the second wall of N-InP of VCSEL and APD
Indium column is formed on AuGeNiAu electrode, indium pillar height degree is slightly above 3-10 μm of the second protective layer of InGaAs of VCSEL (see Fig. 7).
Step 15: respectively will be on the indium column and VCSEL control circuit and reading circuit (ROIC) on VCSEL and APD chip
Electrode alignment and heat pressurization interconnection (see Fig. 8).
Step 16: according to back side VCSEL and the APD figure made in step 1 and step 3 and to board marker, in conjunction with photoetching
With wet etching and chemical mechanical grinding (CMP) technique, InP substrate is thinned to 0-20 μm；Then start to corrode middle section
APD material to the first protective layer of VCSEL, form the tubaeform back side light hole of VCSEL (see Fig. 8).
Step 17: being thinned and deposited silicon nitride anti-reflection film on InP substrate or P-InP buffer layer after polishing.Silicon nitride
Not only increase the efficiency that VCSEL light extraction efficiency and reflected light enter APD, and protect APD material exempt from such environmental effects (see
Fig. 9).
Step 18: respectively by the annular mirror of VCSEL array and APD array and corresponding microlens array and Fresnel Lenses
Piece has been directed at focal length, has fixed, and exports with realizing VCSEL beam collimation and collimatedly enters APD array with reflected light (see Fig. 9).
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of VCSEL and APD integrated chip characterized by comprising
Signal transmitter unit is set on substrate, and the first signal including lamination setting receives structure sheaf and the transmitting of the first signal
Structure sheaf, is provided with the first top electrode and the first hearth electrode on the first signal emitting structural layer, first top electrode and
First hearth electrode is respectively electrically connected to one side surface of signal transmitter unit, forms the first apical grafting contact and the first bottom connects
Contact；
Signal receiving unit is set on the substrate, is separated in the horizontal direction with the signal transmitter unit, including
The second signal of lamination setting receives structure sheaf and second signal emitting structural layer, and the second signal receives to be set on structure sheaf
It is equipped with the second top electrode and the second hearth electrode, second top electrode and second hearth electrode are respectively electrically connected to the signal
One side surface of receiving unit forms second in the same plane with first apical grafting contact, first bottom contact point
Apical grafting contact, the second bottom contact point；
Control unit is connect with first apical grafting contact and first bottom contact point, for controlling the first signal hair
It penetrates structure sheaf and issues laser signal to object；
Data processing unit is connect with second apical grafting contact and second bottom contact point, for anti-to the object
The laser signal come is emitted back towards to be analyzed and processed；
First optical path adjusting unit, connect with the signal transmitter unit, for issuing the first signal emitting structural layer
Laser shaping be parallel light emitting to the object；
Second optical path adjusting unit, connect with the signal receiving unit, for the reflected laser of the object is whole
Shape is that parallel light emitting to second signal receives structure sheaf；
It is avalanche photodide (APD) structure that first signal, which receives structure sheaf and second signal reception structure sheaf,
Layer, the first signal emitting structural layer and the second signal emitting structural layer are vertical cavity surface emitting laser
(VCSEL) structure sheaf.
2. VCSEL and APD integrated chip according to claim 1, which is characterized in that the signal transmitter unit goes out light
The incidence surface of face and the signal receiving unit is located at the same side of the substrate.
3. VCSEL and APD integrated chip according to claim 1 or 2, which is characterized in that first apical grafting contact and
First bottom contact point is located at a side surface of the signal transmitter unit far from light-emitting surface, second apical grafting contact and institute
It states the second bottom contact point and is located at a side surface of the signal receiving unit far from incidence surface.
4. VCSEL and APD integrated chip according to claim 1-3, which is characterized in that described control unit is logical
Indium column is crossed to connect with first apical grafting contact, first bottom contact point, the data processing unit by indium column with it is described
Second apical grafting contact, the connection of second bottom contact point.
5. VCSEL and APD integrated chip according to claim 1-4, which is characterized in that the first optical path tune
Section unit is first lens subassembly of the convex surface towards the signal transmitter unit；The second optical path adjusting unit is convex surface direction
Second lens subassembly of the object.
6. VCSEL and APD integrated chip according to claim 5, which is characterized in that first lens subassembly is micro-
Lens array, second lens subassembly are Fresnel Lenses.
7. VCSEL and APD integrated chip according to claim 1-6, which is characterized in that the signal transmitting is single
The wavelength for the laser signal that member issues is more than or equal to 1400nm.
8. VCSEL and APD integrated chip according to claim 1-7, which is characterized in that the avalanche optoelectronic two
Pole pipe (APD) structure sheaf includes the Window layer of lamination setting, uptake zone, content gradually variational area, charged region, snowslide amplification region, current collection
Pole layer and contact layer；
Vertical cavity surface emitting laser (VCSEL) structure sheaf includes the first protective layer of lamination setting, upper distributed feed-back cloth
Glug reflecting mirror, the first wall, the first current-limiting layer, active area, the second current-limiting layer, the second wall, lower distribution
Feed back Bragg mirror and the second protective layer.
9. a kind of preparation method of VCSEL and APD integrated chip characterized by comprising
Several signal transmitter units being separated and signal receiving unit is formed on the substrate, the signal transmitter unit includes
First signal of lamination setting receives structure sheaf and the first signal emitting structural layer, and the signal receiving unit includes lamination setting
Second signal receive structure sheaf and second signal emitting structural layer, wherein first signal receives structure sheaf and described the
It is avalanche photodide (APD) structure sheaf that binary signal, which receives structure sheaf, and prepared by same layer, the first signal emitting structural
Layer and the second signal emitting structural layer are vertical cavity surface emitting laser (VCSEL) structure sheaf, and prepared by same layer；
The first top electrode and the first hearth electrode are formed on the first signal emitting structural layer, receives and ties in the second signal
The second top electrode and the second hearth electrode are formed on structure layer；
First top electrode and first hearth electrode are electrically connected to side of the signal transmitter unit far from light-emitting surface
Surface forms the first apical grafting contact and the first bottom contact point；Second top electrode and second hearth electrode are electrically connected to
A side surface of the signal receiving unit far from incidence surface is formed and first apical grafting contact, first bottom contact point
Second apical grafting contact and the second bottom contact point in the same plane；
First apical grafting contact, first bottom contact point are electrically connected with control unit, by second apical grafting contact, institute
The second bottom contact point is stated to connect with data processing unit.
10. the preparation method of VCSEL and APD integrated chip according to claim 9, which is characterized in that further include:
First optical path adjusting unit is set on the light-emitting surface of the signal transmitter unit；
And/or the second optical path adjusting unit is set on the incidence surface of the signal receiving unit.
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