CN108963054B - Crystal-coated light-emitting diodes and its manufacturing method - Google Patents
Crystal-coated light-emitting diodes and its manufacturing method Download PDFInfo
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- CN108963054B CN108963054B CN201710384011.8A CN201710384011A CN108963054B CN 108963054 B CN108963054 B CN 108963054B CN 201710384011 A CN201710384011 A CN 201710384011A CN 108963054 B CN108963054 B CN 108963054B
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- light
- sheet metal
- emitting diode
- backlight unit
- diode chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The present invention is about a kind of crystal-coated light-emitting diodes and its manufacturing method.Crystal-coated light-emitting diodes include light-emitting diode chip for backlight unit, the first sheet metal, the second sheet metal, encapsulating material, conductive part and insulating layer with anode and cathode.Light-emitting diode chip for backlight unit, the first sheet metal and the second sheet metal are packaged in encapsulating material, and the positive electrode and negative electrode of light-emitting diode chip for backlight unit, the first sheet metal and the second sheet metal are insulated from each other and respectively have the surface that is exposed from the surface of encapsulating material.In the state that conductive part setting to keep insulation between positive electrode and negative electrode, it is electrically connected the first and second sheet metals with anode and cathode respectively.Insulating layer is arranged on the surface of encapsulating material, with cover conductive part and be exposed to encapsulating material surface anode, cathode, first and second sheet metal.
Description
Technical field
The present invention relates to a kind of crystal-coated light-emitting diodes and its manufacturing method, it is simple especially with regard to a kind of structure and
The crystal-coated light-emitting diodes and its manufacturing method of influence caused by heat can be reduced.
Background technique
Conventionally, as light emitting diode (LED) is with higher compared to conventional light source (such as: incandescent lamp)
Luminous efficiency and lower energy loss, have been widely used as light source.In practical application, by light emitting diode
Light emitting device as light source is usually multiple light-emitting diodes by being assembled on same substrate in series or in parallel
Pipe is formed.However, a large amount of heat will especially be worked as along with generation while multiple light emitting diodes generate light herein
When multiple light emitting diodes are assembled on the same substrate with high density, if heat is accumulated on substrate and can not effectively be sent out
Shed, it will cause undesirable influence, for example, the deformation of substrate, light-emitting diode chip for backlight unit fall off or the delivery efficiency that shines
Decaying etc..
It is currently known the light emitting diode construction referred to as flip (flip-chip).Such crystal-coated light-emitting diodes
Structure is mainly its surface towards circuit substrate to be arranged in the anode and cathode of light-emitting diode chip for backlight unit, and penetrate welding
Mode contacts the anode of light-emitting diode chip for backlight unit and cathode with circuit substrate respectively.In this configuration, light-emitting diodes tube core
Heat caused by piece is luminous will transmit through its anode and cathode via the substrate of solder, conducting wire copper foil, dielectric ink, metal or ceramics
Ontology is formed by thermally conductive pathways, conducts and exhales.However, the thermal resistance having in such thermally conductive pathways is higher
, it is unable to reach optimal heat dissipation effect.Further, since many components are contained in above-mentioned this structure, in structure
Complexity is difficult to reduce its manufacturing cost also.
In addition to this, it is known that crystal-coated light-emitting diodes structure be usually to take the structure of stacking-type, by light-emitting diodes
Tube chip is stacked over to be formed by circuit substrate by the substrate body of solder, conducting wire copper foil, dielectric ink, metal or ceramics,
Due to the light-emitting diode chip for backlight unit to contact with each other and solder, solder and conducting wire copper foil ... wait between thermal expansion coefficient be not each other not
With, when the heat generated from light-emitting diode chip for backlight unit because shining is passed through the structure of this stacking-type, it is clipped in storehouse
The component of formula structure middle position need to bear simultaneously the component at the lower position disposed thereon that thermal expansion coefficient is different from because
Deformation caused by thermal expansion is pullled, and then is easy to produce deformation and is led to the situation for occurring damage, fall off etc..
In view of this, applicant, which thinks hard, studies and have developed a kind of brand-new crystal-coated light-emitting diodes, not only have
Have the advantages that structure is simple, and can also reduce simultaneously as light-emitting diode chip for backlight unit because shine caused by heat to structure caused by
Adverse effect.
Summary of the invention
It is simple the purpose of the present invention is to provide a kind of structure and can reduce caused by heat in order to solve the problem above-mentioned
The crystal-coated light-emitting diodes and its manufacturing method of influence.
First aspect according to the present invention is to provide a kind of crystal-coated light-emitting diodes comprising has anode and cathode
Light-emitting diode chip for backlight unit, the first sheet metal, the second sheet metal, encapsulating material, conductive part and insulating layer.Light-emitting diode chip for backlight unit,
First sheet metal and the second sheet metal are packaged in encapsulating material, and the positive electrode and negative electrode of light-emitting diode chip for backlight unit, the first gold medal
Belong to piece and the second sheet metal is insulated from each other and respectively have the surface that is exposed from a surface of encapsulating material.Conductive part setting comes
Between the positive electrode and negative electrode of light emitting diode keep insulation in the state of, make the first and second sheet metals respectively with anode and it is negative
Pole is electrically connected.Insulating layer is arranged on the surface of encapsulating material, to cover conductive part and be exposed to the surface of encapsulating material
The surface of anode, cathode, first and second sheet metal.
Second aspect according to the present invention is to provide a kind of method for manufacturing crystal-coated light-emitting diodes, this method comprises:
The sheet metal for having through-hole is provided；Light-emitting diode chip for backlight unit is set in the through-hole of sheet metal, the anode of light-emitting diode chip for backlight unit
It is not contacted with sheet metal with cathode；With encapsulating material package metals piece and light emitting diode, wherein the surface of sheet metal and the hair
The anode of optical diode and the surface of cathode are exposed from the surface of encapsulating material；Sheet metal is etched, to form circuit pattern,
Circuit pattern includes first part and the second part of mutually insulated；Conductive part is formed, in the anode of light-emitting diode chip for backlight unit
The first part of the anode for making light-emitting diode chip for backlight unit in the state of insulating and circuit pattern is kept to be electrically connected and make with cathode
The cathode of light-emitting diode chip for backlight unit and the second part of circuit pattern are electrically connected；And it is exhausted in being formed on the surface of encapsulating material
Edge layer, with cover conductive part and the sheet metal being exposed from the surface of encapsulating material surface and light emitting diode anode and
The surface of cathode.
Detailed description of the invention
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates, in which:
Fig. 1 is the diagrammatic cross-section for showing the crystal-coated light-emitting diodes of embodiment according to the present invention；
Fig. 2A is to show gold used in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention
Belong to the schematic top plan view of piece；
The diagrammatic cross-section that Fig. 2 B is intercepted for the line II-II along Fig. 2A；
Fig. 3 A and 3B are display, will in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention
Light-emitting diode chip for backlight unit is set to the view of the state in the through-hole of sheet metal；
Fig. 4 is display, in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention, with package material
Expect the diagrammatic cross-section of the state of package metals piece and light-emitting diode chip for backlight unit；
Fig. 5 is display, in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention, is arranged photosensitive
Glue-line is in the diagrammatic cross-section of the state on the surface of encapsulating material；
Fig. 6 A and 6B are display, will in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention
Shielding is set to the view of the state of the surface side back to encapsulating material of photosensitive layer；
Fig. 7 A and 7B are display, in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention,
The view for corresponding to the state of the opening of patterning opening of shielding is formed in photosensitive layer；
Fig. 8 A and 8B are display, in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention, electricity
The view for the state that road pattern is formed by etching sheet metal, wherein photosensitive layer has been removed；
Fig. 9 is display, in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention, is formed conductive
The diagrammatic cross-section of the state in portion；And
Figure 10 is display, in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention, is formed exhausted
The diagrammatic cross-section of the state of edge layer.
Component label instructions are as follows in figure:
1: crystal-coated light-emitting diodes
10: light-emitting diode chip for backlight unit
11: anode
12: cathode
20,20 ': sheet metal
200: through-hole
21: the first sheet metals
22: the second sheet metals
30: encapsulating material
31: recess portion
300: surface
40: conductive part
50: insulating layer
70: photosensitive layer
700: opening
90: shielding
900: patterning opening
Specific embodiment
Fig. 1 shows the crystal-coated light-emitting diodes of embodiment according to the present invention.As shown in Figure 1, two pole of crystal-coated light-emitting
Pipe 1 includes light-emitting diode chip for backlight unit 10, the first sheet metal 21, the second sheet metal 22, package material with anode 11 and cathode 12
Material 30, conductive part 40 and insulating layer 50.
Further it, light-emitting diode chip for backlight unit 10, the first sheet metal 21 and the second sheet metal 21 are packaged in package material
In material 30, and the anode 11 of light-emitting diode chip for backlight unit 10 and cathode 12, the first sheet metal 21 and the second sheet metal 22 are electric each other
Property insulation.Anode 11, cathode 12, the first sheet metal 21 and the second sheet metal 22 respectively have from a surface of encapsulating material 30
300 surfaces being exposed.The setting of conductive part 40 to keep insulation between the anode 11 and cathode 12 of light emitting diode 10
Under state, connect the first sheet metal 21 and the second sheet metal 22 electrically with the anode 11 of light emitting diode 10 and cathode 12 respectively
It connects.Insulating layer 50 is arranged on the surface 300 of encapsulating material 30, to cover conductive part 40 and be exposed to the surface of encapsulating material 30
The surface of 300 anode 11, cathode 12, the first sheet metal 21 and the second sheet metal 22.
Preferably, as shown in figure 1 clearly visiblely, the light-emitting diodes tube core being exposed from the surface of encapsulating material 30 300
The table of the anode 11 of piece 10 and the respective surface of cathode 12, the first sheet metal 21 and the second sheet metal 22 with encapsulating material 30
Face 300 flushes.In this way, the subsequent working process carried out to this surface is beneficial to, for example, on the surface flushed herein
Form conductive part 40 etc..
The conductive part 40 of embodiment according to the present invention is preferably conducting resinl (for example, elargol), solder etc., and its by
The mode of wire mark, dispensing etc. be formed to make the anode 11 of light-emitting diode chip for backlight unit 10 and cathode 12 respectively with the first sheet metal 21
It is electrically connected with the second sheet metal 22.
In an embodiment of the present invention, insulating layer 50 preferably can be thermally conductive insulating layer, configure to conduct by luminous two
Generated heat when luminous of pole pipe chip 10.In this case, additional cooling mechanism, for example, heat sink, can be attached
To outside thermally conductive insulating layer, further to enable the heat for being transmitted to thermally conductive insulating layer more preferably exhale.Alternatively, in addition to
Except the thermally conductive function with insulation, thermally conductive insulating layer may also select made using the material that can further provide for heat sinking function
At.
On the other hand, although in the present embodiment, light-emitting diode chip for backlight unit 10 is shown as its light-emitting surface (for example, with just
The opposite surface in surface set by pole, cathode) be that fully packed material 30 covers (encapsulation), however, in order in response to
Demand in different application, the light-emitting surface of light-emitting diode chip for backlight unit 10 can also be arranged to be exposed from encapsulating material 30, also
That is, encapsulating material 30 may by the light-emitting surface of light-emitting diode chip for backlight unit 10 be exposed to it is outer in a manner of carry out encapsulating light emitting diode chip for backlight unit
10。
In addition to this, although being not explicitly shown in schema, in fact, in the package material of embodiment according to the present invention
In material, other than light-emitting diode chip for backlight unit, the first sheet metal and the second sheet metal, it is also possible to be packaged with configuration and come and luminous two
Other electronic building bricks that pole pipe chip synergistically operates, for example, current-limiting resistance ... etc..
The various features having from the above-mentioned crystal-coated light-emitting diodes 1 of the embodiment of the present invention, due to this hair
Bright crystal-coated light-emitting diodes 1 are will to be disposed directly on as the first sheet metal 21 of circuit pattern and the second sheet metal 22
It is electrically connected in encapsulating material 30 and by conductive part 40, provides circuit pattern without relying on traditional circuit substrate,
Structure relative to tradition using circuit substrate crystal-coated light-emitting diodes it is more simple and be easy make (processing procedure will be said in later
It is bright).Therefore in this case, only it can change crystal covering type hair easily by the characteristic for changing used sheet metal
The applicable level of optical diode institute, without adding other structures.For example, if being made using flexible metal material
For the first sheet metal 21 and the material of the second sheet metal 22, the crystal-coated light-emitting diodes 1 that will enable of the invention have can
Flexibility, and then can be used in and need to have in flexible lamp bar.On the other hand, if using not having flexible metal material
Material is formed by not flexible crystal-coated light-emitting diodes as the first sheet metal 21 and the material of the second sheet metal 22
Then can be suitble to be applied to because of the planarization of its bottom surface (outer surface of insulating layer 50) seem projecting lamp etc. lamp structure
In.
In conclusion due to crystal-coated light-emitting diodes according to an embodiment of the present invention be will be as the first of circuit pattern
Sheet metal and the second sheet metal and light-emitting diode chip for backlight unit are arranged on identical side (encapsulating material side) relative to conductive part, and
The anode of light-emitting diode chip for backlight unit and cathode are electrically connected (also with the first sheet metal and the second sheet metal respectively by conductive part
Can be described as bridge connected connection), it is according to an embodiment of the present invention to cover compared to the crystal-coated light-emitting diodes of conventional stack formula connection
Brilliant formula light emitting diode can be effectively reduced or avoid the positive/negative because of light emitting diode, conductive part and first/second sheet metal
Between thermal expansion coefficient difference and caused by the problems such as deforming, falling off.
In addition to this, by the thermally conductive insulating layer being covered on outside heat-conducting part, when the heat as caused by light-emitting diode chip for backlight unit
When being passed to conductive part via electrode (positive or negative pole), this heat can be conducted or be dissipated outward from conductive part by thermally conductive insulating layer
It goes out, reduces this heat for adverse effect caused by sheet metal (the first sheet metal or the second sheet metal).
Next, by the manufacture crystal-coated light-emitting diodes for illustrating embodiment according to the present invention refering to Fig. 2A to Figure 10
Method.
As shown in figs. 2 a and 2b, first in the method for the manufacture crystal-coated light-emitting diodes of embodiment according to the present invention
First it is to provide the sheet metal 20 with through-hole 200.This through-hole 200 may be by punching press, etching or any of cutting side
Formula and be formed in sheet metal 20 in advance, and the size of through-hole 20 be match and will be arranged on to configure by design
The size of light-emitting diode chip for backlight unit 10 (referring to Fig. 3 A and 3B) therein.
Then, as shown in figures 3 a and 3b, light-emitting diode chip for backlight unit 10 is set in the through-hole 200 of sheet metal 20, and
Under this state, the anode 11 of light-emitting diode chip for backlight unit 10 and cathode 12 will not be contacted with sheet metal 20.
Referring to fig. 4, in the through-hole 200 that light-emitting diode chip for backlight unit 10 has been arranged at sheet metal 20 in the state of, with envelope
Package material 30 is packaged sheet metal 20 and light-emitting diode chip for backlight unit 10, so that sheet metal 20 and light-emitting diode chip for backlight unit 10 are big
It is packaged in encapsulating material 30 with causing.Note that in this case, the surface of sheet metal 20 and the anode 11 of light emitting diode 10
Surface with cathode 12 is exposure in a manner of being flushed from the surface of encapsulating material 30 300 by the surface 300 with encapsulating material 30
Out.
Then it will illustrate the step of circuit pattern is formed in sheet metal 20.
Firstly, this photosensitive layer 70 is to cover as shown in figure 5, photosensitive layer 70 to be arranged in the surface 300 of encapsulating material 30
Cover the surface for the sheet metal 20 being exposed from the surface of encapsulating material 30 300 and the anode 11 and cathode of light emitting diode 10
12 surface.After photosensitive layer 70 is set, as shown in Fig. 6 A and 6B, will there is the shielding part 90 of patterning opening 900 to be arranged
In the surface side back to encapsulating material 30 of photosensitive layer 70, through the patterning of shielding 90 900 pairs of photosensitive layers 70 of opening
Carry out photosensitive development etching.To photosensitive layer 70 be etched the result is that form in photosensitive layer 70 corresponding to pattern
The opening 700 for melting mouth 900, as shown in Fig. 7 A and 7B.Next, through the opening 700 of photosensitive layer 70, it can be further right
The sheet metal 20 that 70 lower section of photosensitive layer is covered is etched.Finally, as shown in Figure 8 A, sheet metal 20 will become after the etching
As required circuit pattern 20 ', this circuit pattern 20 ' include at least mutually insulated first part and second part (for example,
First part and second part of the position at the side of the positive electrode of single a light-emitting diode chip for backlight unit 10 and negative side, are comparable to most
It is formed by the first sheet metal 21 and the second sheet metal 22 of crystal-coated light-emitting diodes 1 afterwards, as shown in Figure 1).Note that losing
During sheet metal 20 is carved to form circuit pattern 20 ', the gold of the part due to occupying the position in encapsulating material 30 originally
Belong to piece 20 and be removed because of etching, while etching sheet metal 20 to form circuit pattern 20 ', recess portion 31, which will form, to be sealed
Corresponding at the position that is etched of sheet metal 20 in package material 30 (that is, position at) other than circuit pattern 20 '.This
Outside, after etching circuit pattern 20 ', photosensitive layer 70 will be removed from encapsulating material 30 by known mode.
Then, after the circuit pattern formed in sheet metal 20, as shown in figure 9, conductive part 40 will be formed so that
The anode 11 of light-emitting diode chip for backlight unit 10 and the first part of circuit pattern 20 ' are electrically connected and make light-emitting diodes tube core
The cathode 12 of piece 10 and the second part of circuit pattern 20 ' are electrically connected.Specifically, in this step, preferably can be used
The modes such as wire mark, dispensing form the conducting resinl as conductive part 40, solder etc..
Finally, as shown in Figure 10, being formed in insulating layer 50 on the surface 300 of encapsulating material 30, and cover conductive part 40
And the sheet metal (circuit pattern 20 ') being exposed from the surface of encapsulating material 30 300 surface and light emitting diode 10 just
The surface of pole 11 and cathode 12.Meanwhile insulating layer 50 can also be extended further into because etching sheet metal 20 is formed by encapsulation
In the recess portion 31 (as shown in Figure 8 A) of material 30.
As a result, according to different demands, then via the known processing procedure of subsequent cutting etc., can produce such as this case Fig. 1
Shown in crystal-coated light-emitting diodes 1.
The crystal-coated light-emitting come out manufactured by method by the manufacture crystal-coated light-emitting diodes of the embodiment of the present invention
Diode is also likewise supplied with the advantageous effects such as the above-mentioned crystal-coated light-emitting diodes of this case.
In addition, although applicant it should be particularly noted that, illustrate in the present embodiment, places by light-emitting diode chip for backlight unit
Into the through-hole of sheet metal and after being encapsulated, the example of the circuit pattern of sheet metal is just formed by etching, however, this hair
It is bright without being limited thereto.In details of the words, before can not also being placed in the through-hole of sheet metal on the led chips, equally
By the mode (for example, by etching mode of photosensitive layer, shielding etc.) of etching, being first formed simultaneously in sheet metal has electricity
Road pattern and through-hole for light-emitting diode chip for backlight unit to be arranged.In the case, it is only necessary to again be set to light-emitting diode chip for backlight unit
By sheet metal and light emitting diode chip package and it is subsequently formed conductive part and insulating layer in through-hole, using packaging plastic, can be made
Produce the crystal-coated light-emitting diodes such as the embodiment of the present invention.
Although the present invention is disclosed as above with preferred embodiment, however, it is not to limit the invention, any this field skill
Art personnel, without departing from the spirit and scope of the present invention, when can make a little modification and perfect therefore of the invention protection model
It encloses to work as and subject to the definition of the claims.
Claims (22)
1. a kind of crystal-coated light-emitting diodes, comprising:
Light-emitting diode chip for backlight unit has anode and cathode；
First sheet metal；
Second sheet metal；
Encapsulating material, configuration encapsulate the light-emitting diode chip for backlight unit, first sheet metal and second sheet metal in the inner,
In, anode and the cathode, first sheet metal and second sheet metal of the light-emitting diode chip for backlight unit are insulated from each other and divide
The surface that Ju You not be exposed from a surface of the encapsulating material；
Conductive part makes this in the state that configuration to keep insulation between the anode of the light-emitting diode chip for backlight unit and the cathode
The anode of first sheet metal and the light-emitting diode chip for backlight unit is electrically connected and makes second sheet metal and the light-emitting diodes tube core
The cathode of piece is electrically connected；And
Insulating layer is arranged on the surface of the encapsulating material, to cover the conductive part and be exposed to being somebody's turn to do for the encapsulating material
The anode of the light-emitting diode chip for backlight unit on surface and multiple tables of the cathode, first sheet metal and second sheet metal
Face.
2. the as claimed in claim 1 crystal-coated light-emitting diodes, which is characterized in that the anode of the light-emitting diode chip for backlight unit and
Multiple tables being exposed respectively from the surface of the encapsulating material of the cathode, first sheet metal and second sheet metal
Face is flushed with the surface of the encapsulating material.
3. the crystal-coated light-emitting diodes as claimed in claim 1, which is characterized in that the insulating layer is thermally conductive insulating layer, configuration
To conduct the heat as caused by the light-emitting diode chip for backlight unit.
4. the crystal-coated light-emitting diodes as claimed in claim 3, further include heat sink, which contacts the heat conductive insulating
Layer, so as to conduct the thermal transpiration come from the thermally conductive insulating layer.
5. the as claimed in claim 3 crystal-coated light-emitting diodes, which is characterized in that the thermally conductive insulating layer be further configured to diverging by
Heat caused by the light-emitting diode chip for backlight unit.
6. the crystal-coated light-emitting diodes as claimed in claim 1, which is characterized in that the light-emitting diode chip for backlight unit, which has, to shine
Face, the light-emitting surface are configured to be exposed from the encapsulating material.
7. the crystal-coated light-emitting diodes as claimed in claim 1, which is characterized in that first sheet metal and second sheet metal
Form the circuit pattern in the crystal-coated light-emitting diodes.
8. the crystal-coated light-emitting diodes as claimed in claim 1, which is characterized in that first sheet metal and second sheet metal
For flexible sheet metal.
9. the as claimed in claim 1 crystal-coated light-emitting diodes, which is characterized in that the conductive part is by wire mark or for dispensing glue
Mode and the conducting resinl or solder being formed.
10. the crystal-coated light-emitting diodes as claimed in claim 1, further include for operating together with the light-emitting diode chip for backlight unit
Electronic building brick.
11. a kind of method for manufacturing crystal-coated light-emitting diodes, this method include the following steps:
The sheet metal for having through-hole is provided；
Light-emitting diode chip for backlight unit is set in the through-hole of the sheet metal, and the light-emitting diode chip for backlight unit anode and cathode not with
Sheet metal contact；
The sheet metal and the light emitting diode are encapsulated with encapsulating material, wherein the anode of the sheet metal and the light emitting diode
Respectively there is the surface being exposed from the surface of the encapsulating material with the cathode；
Etch the sheet metal, to form circuit pattern, the circuit pattern at least have mutually insulated first part and second
Point；
Conductive part is formed, to make this shine in the state that the anode of the light-emitting diode chip for backlight unit and the cathode keep insulating
The anode of diode chip for backlight unit and the first part of the circuit pattern are electrically connected and bear this of the light-emitting diode chip for backlight unit
The second part of pole and the circuit pattern is electrically connected；And
In insulating layer is arranged on the surface of the encapsulating material, to cover the conductive part and be exposed from the surface of the encapsulating material
The surface of the sheet metal out and multiple surfaces of the anode of the light emitting diode and the cathode.
12. the method for the manufacture crystal-coated light-emitting diodes such as claim 11, which is characterized in that etch the sheet metal
The step includes:
Photosensitive layer is set in the surface of the encapsulating material, to cover the surface of the sheet metal and being somebody's turn to do for the light emitting diode
Multiple surfaces of anode and the cathode；
Setting has the shielding part of patterning opening in the surface side back to the encapsulating material of the photosensitive layer；
Through the patterning opening etching of the shielding part photosensitive layer, correspond to the pattern to be formed in the photosensitive layer
Melt the opening of mouth；
Through the opening etching sheet metal in the photosensitive layer, to form the circuit pattern；And
The photosensitive layer is removed from the surface of the encapsulating material；And
Wherein, in the step of etching the sheet metal, corresponding at the position that the sheet metal is etched in the encapsulating material
Recess portion is formed, and the insulating layer also extends into the recess portion.
13. a kind of method for manufacturing crystal-coated light-emitting diodes, this method include the following steps:
The sheet metal with through-hole and circuit pattern is provided, which at least has the first part and second of mutually insulated
Part；
Light-emitting diode chip for backlight unit is set in the through-hole of the sheet metal, and the light-emitting diode chip for backlight unit anode and cathode not with
Sheet metal contact；
The sheet metal and the light emitting diode are encapsulated with encapsulating material, wherein the anode of the sheet metal and the light emitting diode
Respectively there is the surface being exposed from the surface of the encapsulating material with the cathode；
Conductive part is formed, to make this shine in the state that the anode of the light-emitting diode chip for backlight unit and the cathode keep insulating
The anode of diode chip for backlight unit and the first part of the circuit pattern are electrically connected and bear this of the light-emitting diode chip for backlight unit
The second part of pole and the circuit pattern is electrically connected；And
In insulating layer is arranged on the surface of the encapsulating material, to cover the conductive part and be exposed from the surface of the encapsulating material
The surface of the sheet metal out and multiple surfaces of the anode of the light emitting diode and the cathode.
14. the method for the manufacture crystal-coated light-emitting diodes such as claim 13, which is characterized in that the sheet metal is by erosion
It carves to form the through-hole and the circuit pattern.
15. the method for the manufacture crystal-coated light-emitting diodes such as claim 11 or 13, which is characterized in that from the package material
Multiple tables of the surface for the sheet metal that the surface of material is exposed and the anode of the light emitting diode and the cathode
Face is flushed with the surface of the encapsulating material.
16. the method for the manufacture crystal-coated light-emitting diodes such as claim 11 or 13, which is characterized in that the insulating layer is
Thermally conductive insulating layer configures to conduct the heat as caused by the light-emitting diode chip for backlight unit.
17. the method for the manufacture crystal-coated light-emitting diodes such as claim 16 further includes providing and the thermally conductive insulating layer
The heat sink of contact, so as to conduct the thermal transpiration come from the thermally conductive insulating layer.
18. the method for the manufacture crystal-coated light-emitting diodes such as claim 16, which is characterized in that the thermally conductive insulating layer is also
Configuration is to dissipate the heat as caused by the light-emitting diode chip for backlight unit.
19. the method for the manufacture crystal-coated light-emitting diodes such as claim 11 or 13, which is characterized in that the light-emitting diodes
Tube chip has light-emitting surface, which is configured to be exposed from the encapsulating material.
20. the method for the manufacture crystal-coated light-emitting diodes such as claim 11 or 13, which is characterized in that the sheet metal is
Flexible sheet metal.
21. the method for the manufacture crystal-coated light-emitting diodes such as claim 11 or 13, which is characterized in that the conductive part is
It is formed by wire mark or mode for dispensing glue.
22. the method for the manufacture crystal-coated light-emitting diodes such as claim 11 or 13, which is characterized in that the encapsulating material
In be also packaged with electronic building brick for operating together with the light-emitting diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710384011.8A CN108963054B (en) | 2017-05-26 | 2017-05-26 | Crystal-coated light-emitting diodes and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710384011.8A CN108963054B (en) | 2017-05-26 | 2017-05-26 | Crystal-coated light-emitting diodes and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108963054A CN108963054A (en) | 2018-12-07 |
| CN108963054B true CN108963054B (en) | 2019-10-15 |
Family
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| CN101118942A (en) * | 2006-08-03 | 2008-02-06 | 丰田合成株式会社 | Solid state device |
| CN103236490A (en) * | 2013-04-03 | 2013-08-07 | 大连德豪光电科技有限公司 | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device |
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| CN101118942A (en) * | 2006-08-03 | 2008-02-06 | 丰田合成株式会社 | Solid state device |
| CN103236490A (en) * | 2013-04-03 | 2013-08-07 | 大连德豪光电科技有限公司 | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device |
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