CN108962980A - A kind of flexible panel and the device with display panel - Google Patents
A kind of flexible panel and the device with display panel Download PDFInfo
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- CN108962980A CN108962980A CN201810715250.1A CN201810715250A CN108962980A CN 108962980 A CN108962980 A CN 108962980A CN 201810715250 A CN201810715250 A CN 201810715250A CN 108962980 A CN108962980 A CN 108962980A
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- 239000010409 thin film Substances 0.000 claims abstract description 163
- 239000010408 film Substances 0.000 claims description 19
- 230000005611 electricity Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 13
- 239000012141 concentrate Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Abstract
The present invention discloses a kind of flexible panel and the device with display panel, wherein flexible panel includes flexible back plate and the thin film transistor (TFT) in flexible back plate in multiple groups array arrangement is arranged in several, each thin film transistor (TFT) includes the first electrode and second electrode for being paired into source electrode and drain electrode, channel region is formed between the first electrode and the second electrode, flexible panel has bending axis, overlapping with bending axis along at least one of the first electrode of multiple thin film transistor (TFT)s of bending axis arrangement and second electrode.Channel region along multiple thin film transistor (TFT)s of bending axis arrangement is non-uniform channel.Therefore the present invention can effectively reach thin film transistor (TFT) caused by reduction stress and electrically degenerate, and can increase the bending number of flexible panel, and then improve the service life of flexible panel.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of flexible panel and the device with display panel.
Background technique
Transistor is the Primary Component for making display device, wherein thin film transistor (TFT) (Thin-Film-Transistor, letter
Claim TFT) be widely applied electronic device in display device, due to thin film transistor (TFT) in flexible foldable product using compared with
It is more, therefore higher to the stability requirement of thin film transistor (TFT), the often channel of thin film transistor (TFT) institute when flexible panel is bent
The region of stress concentration of generation is easy to happen bending, to generate stress defect, influences thin film transistor (TFT) and hair in display device
The normal work of optical device.
Thin film transistor (TFT) traditional at present generally passes through flexible display screen and axially penetrates through entire thin film transistor (TFT) with its bending
Channel region, when flexible display screen being avoided to bend caused by stress defect, as shown in Figure 1, this in flexible display screen
The upper channel region for forming thin film transistor (TFT) is uniform channel.But the film for forming channel region with same area is brilliant
Body pipe, if flexible display screen uses uniform channel arrangement thin film transistor (TFT), since flexible display screen is axially penetrated through with its bending
The channel region of thin film transistor (TFT) so that the stress area that is formed on the channel region of thin film transistor (TFT) of flexible display screen compared with
Greatly, i.e., the stress area account for same area channel region large percentage, it is clear that since stress area is larger, therefore use equal
Still stress is easy to generate stress defect in the region of stress concentration of flexible display screen the thin film transistor (TFT) of even channel design, will
It causes the electrical of thin film transistor (TFT) to degenerate, increases the pressure drift in thin-film transistor channel region domain, to reduce making for product
Use the service life.
Summary of the invention
Therefore, in the prior art using the thin of uniform channel design technical problem to be solved by the present invention lies in overcoming
Still stress is easy to generate stress defect in the region of stress concentration of flexible display screen film transistor, will cause thin film transistor (TFT)
It is electrical degenerate, increase the pressure drift in thin-film transistor channel region domain, thus the problem of reducing the service life of product.
For this purpose, the present invention provides the following technical scheme that
The present invention provides a kind of flexible panel, including flexible back plate and several settings are in multiple groups in the flexible back plate
The thin film transistor (TFT) of array arrangement, each thin film transistor (TFT) include the first electrode and second electrode for being paired into source electrode and drain electrode,
Channel region is formed between the first electrode and the second electrode, the flexible panel has bending axis, along described curved
Roll over multiple thin film transistor (TFT)s of axis arrangement described first electrode and at least one of the second electrode with it is described curved
It is overlapping to roll over axis.
Optionally, the channel region along multiple thin film transistor (TFT)s of the bending axis arrangement is non-uniform channel.
Optionally, projection of the overlapping region of the bending axis and the non-uniform channel on the bending axis is less than institute
Maximal projection of the non-uniform channel on the bending axis is stated, and/or, the non-uniform channel and the bending axis no overlap.
Optionally, the first electrode is parallel with the bending axis, the second electrode be semi-surrounding structure, described first
One end of electrode is located at the channel region in the semi-surrounding structure and is arranged in the first electrode by the second electrode half
Surround the region formed.
Optionally, the thin film transistor (TFT) of array arrangement described in every group is located at on the straight line of a line, and the second electrode
Opening direction it is consistent.
Optionally, the thin film transistor (TFT) of array arrangement described in every group is located at on the straight line of a line, and two neighboring described
The opening direction of the second electrode of thin film transistor (TFT) is opposite.
Optionally, the thin film transistor (TFT) of array arrangement described in every group is located at on the straight line of a line, and per adjacent at least two
The opening direction of the second electrode of a thin film transistor (TFT) is consistent.
Optionally, the thin film transistor (TFT) in adjacent two column is staggered.
Optionally, the flexible panel, the second electrode with the semi-surrounding structure include:
First straight line is vertically arranged with the bending axis；
Two second straight lines are arranged in parallel with the bending axis, and are connected to the both ends of the first straight line.
Optionally, along multiple thin film transistor (TFT)s of the bending axis arrangement, in at least part of thin film transistor (TFT)
The first electrode extend along the bending axis.
Optionally, along multiple thin film transistor (TFT)s of the bending axis arrangement, at least part of thin film transistor (TFT)
The first electrode extends along the bending axis；One second straight line of at least part of thin film transistor (TFT) is along described curved
Axis is rolled over to extend.
The embodiment of the present invention provides a kind of device with display panel, and the device with display panel is described
Flexible panel.
Technical solution of the embodiment of the present invention, has the advantages that
The present invention provides and the device with display panel, and wherein flexible panel includes that flexible back plate and several settings exist
It is in the thin film transistor (TFT) of multiple groups array arrangement in flexible back plate, each thin film transistor (TFT) includes be paired into source electrode and drain electrode first
Electrode and second electrode form channel region between the first electrode and the second electrode, and flexible panel has bending axis, along bending
At least one of first electrode and second electrode of multiple thin film transistor (TFT)s of axis arrangement and bending axis are overlapping.Along bending axis row
The channel region of multiple thin film transistor (TFT)s of cloth is non-uniform channel.Therefore the present invention can effectively reach caused by reduction stress
Thin film transistor (TFT) is electrically degenerated, and can increase the bending number of flexible panel, and then improve the service life of flexible panel.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the present invention in the prior art using the structural schematic diagram of the thin film transistor (TFT) of uniform channel；
Fig. 2 is the first structure diagram of flexible panel in the embodiment of the present invention；
Fig. 3 is the first structure diagram of thin film transistor (TFT) in flexible panel in the embodiment of the present invention；
Fig. 4 is the second structural schematic diagram of thin film transistor (TFT) in flexible panel in the embodiment of the present invention；
Fig. 5 is the third structural schematic diagram of thin film transistor (TFT) in flexible panel in the embodiment of the present invention；
Fig. 6 A is in the embodiment of the present invention using the gate voltage curve figure of the thin film transistor (TFT) of uniform channel；
Fig. 6 B is in the embodiment of the present invention using the gate voltage curve figure of the thin film transistor (TFT) of non-uniform channel；
Fig. 7 is the second structural schematic diagram of flexible panel in the embodiment of the present invention；
Fig. 8 is the third structural schematic diagram of flexible panel in the embodiment of the present invention；
Fig. 9 is the 4th structural schematic diagram of flexible panel in the embodiment of the present invention；
Figure 10 is the 5th structural schematic diagram of flexible panel in the embodiment of the present invention；
Figure 11 is the 6th structural schematic diagram of flexible panel in the embodiment of the present invention；
Figure 12 is the 7th structural schematic diagram of flexible panel in the embodiment of the present invention；
Figure 13 is the 8th structural schematic diagram of flexible panel in the embodiment of the present invention；
Figure 14 is the 9th structural schematic diagram of flexible panel in the embodiment of the present invention.
Specific embodiment
It is clearly and completely described below in conjunction with technical solution of the attached drawing to the embodiment of the present invention, it is clear that described
Embodiment be a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general
Logical technical staff every other embodiment obtained without making creative work belongs to what the present invention protected
Range.
In the description of the embodiment of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right",
The orientation or positional relationship of the instructions such as "vertical", "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings,
It is merely for convenience of the description embodiment of the present invention and simplifies description, rather than the device or element of indication or suggestion meaning must have
There is specific orientation, be constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " the
One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the embodiment of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can also be the connection inside two elements, can be wireless connection, be also possible to wired connection.For the common skill of this field
For art personnel, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
Embodiment 1
The embodiment of the present invention provides a kind of flexible panel, as shown in Fig. 2, including that flexible back plate and several settings are carried on the back in flexibility
It is in the thin film transistor (TFT) of multiple groups array arrangement on plate.Thin film transistor (TFT) (Thin-Film-Transistor, abbreviation TFT), film
Transistor is one of type of field effect transistor, is specifically as follows isolated-gate field effect transistor (IGFET), and production method is in base
A variety of different films are deposited on plate, are had a very important role to the working performance of display device.As shown in figure 3, every
A thin film transistor (TFT) includes the first electrode and second electrode for being paired into source electrode and drain electrode, i.e., first electrode is source S, the second electricity
Extremely drain D；Or first electrode is drain D, second electrode is source S；Channel region is formed between source S and drain D,
Certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Fig. 3.In Fig. 3, the bending axis of flexible panel
Positioned at the center of the channel region of thin film transistor (TFT), and the axial region of the bending axis of flexible panel is stress concentration region,
In Fig. 3, the stress concentration region in channel region is the stress concentration region in channel, and stress concentration region is flexible panel
Be easier to when bending generate stress defect region, rather than stress concentration region usually not bending axis axial region on, it is non-to answer
Do not allow generally to be also easy to produce stress defect in power concentration zones.Stress concentration region stress, which is destroyed, to be easy so that flexible panel is damaged,
So producing stress on bending axis when flexible panel is bent, therefore being easier to generate in the axial region of bending axis
Stress rupture, even if rather than the presence of stress concentration region stress is not to be easy to be damaged.Therefore the present embodiment research is flexible
Panel is overlapping with bending axis along at least one of the first electrode of multiple thin film transistor (TFT)s of bending axis arrangement and second electrode,
And the channel region of multiple thin film transistor (TFT)s along bending axis arrangement is non-uniform channel, the region of the non-uniform channel can increase
Add the bending number of flexible panel, and then the service life for improving flexible panel is of great significance.
Embodiment 2
The embodiment of the present invention provides a kind of flexible panel, as shown in Fig. 2, including flexible back plate and several settings in flexibility
It is in the thin film transistor (TFT) of multiple groups array arrangement on backboard, each thin film transistor (TFT) includes first electrode and second electrode, herein
First electrode is source S, and second electrode herein is drain D, forms channel region between the first electrode and the second electrode, soft
Property panel have bending axis.Along bending axis arrangement thin film transistor (TFT) first electrode and second electrode in an at least electrode with
It is overlapping to bend axis.As shown in figure 4, bending axis is only overlapping with the second electrode of thin film transistor (TFT) (drain electrode), with first electrode (source
Pole) there is no overlapping.In Fig. 3, bending axis respectively with the first electrode of thin film transistor (TFT) (source electrode) and second electrode (drain electrode)
All exist overlapping.For the thin film transistor (TFT) of multiple groups array arrangement, so the of multiple thin film transistor (TFT)s along bending axis arrangement
In one electrode and second electrode, can be wherein any one electrode and bending axis exist it is overlapping, be also possible to first electrode and
Second electrode exists with bending axis simultaneously to be overlapped, and the channel region along multiple thin film transistor (TFT)s of bending axis arrangement is non-homogeneous ditch
Road.In Fig. 5, the overlapping region for bending axis and non-uniform channel is bending the projection on axis less than non-uniform channel in bending axis
On maximal projection, the overlapping region for bending axis and non-uniform channel is projected as first area a, non-homogeneous ditch on bending axis
Maximal projection of the road on bending axis is second area b, and the area of first area a is less than the area of second area b.Along bending axis
The channel region of multiple thin film transistor (TFT)s of arrangement is non-uniform channel, and in Fig. 4, the non-uniform channel and bending axis are without friendship
It is folded.
Flexible panel in the embodiment of the present invention includes: first straight line with the second electrode of semi-surrounding structure, and curved
Folding axis is vertically arranged；Two second straight lines are arranged in parallel with bending axis, and are connected to the both ends of first straight line.?
In Fig. 3, the first straight line and bending axis of the second electrode with semi-surrounding structure are vertically arranged, and have the of semi-surrounding structure
Two electrodes also have there are two second straight line, and two second straight lines are arranged in parallel with bending axis.
Flexible panel in the embodiment of the present invention can be part along multiple thin film transistor (TFT)s of bending axis arrangement
First electrode in thin film transistor (TFT) extends along bending axis.In Fig. 3, first electrode is source electrode, and source electrode can be along bending axis side
To setting.
Flexible panel in the embodiment of the present invention can be part along multiple thin film transistor (TFT)s of bending axis arrangement
The first electrode of thin film transistor (TFT) extends along bending axis, while a second straight line of thin film transistor (TFT) extends along bending axis.
In Fig. 3, first electrode is source electrode, and second electrode is drain electrode, and source electrode can be arranged along bending axis direction, while second electrode
Any straight line portion can also be along bending axis direction setting in two straight line portions.
Flexible panel in the embodiment of the present invention, in Fig. 3, first electrode is parallel with bending axis, and second electrode is half packet
One end of closed structure, first electrode is located in semi-surrounding structure, and first electrode and second electrode are paired into source electrode or drain electrode,
The channel region formed between one electrode and second electrode is the region that first electrode is formed by second electrode semi-surrounding.In Fig. 3
In, when first electrode is source electrode, when second electrode is drain electrode, one end of first electrode is located in semi-surrounding structure, second electrode
For semi-surrounding structure.It is of course also possible to be first electrode be source electrode when, second electrode be drain electrode when, second electrode one end position
In in semi-surrounding structure, first electrode is semi-surrounding structure.In Fig. 1, bending axis when flexible panel is bent is through whole
Channel region between a source S and drain D, bending axis when flexible panel is bent through entire source S and drain D it
Between channel region be uniform channel because flexible panel bending axis through thin film transistor (TFT) channel region be stress concentrate
Area finds that the stress concentration region in Fig. 1 accounts for the ratio of its channel region much larger than stress collection in Fig. 3 by comparing Fig. 3 in Fig. 1
Middle area accounts for the ratio of its channel region, illustrates in Fig. 1 more to hold because the stress concentration region area that is located at its channel region is larger
It easily induces thin film transistor (TFT) and generates stress defect, therefore the transistor arranged on the flexible panel in the present embodiment is in source S and leakage
Stress defect can be effectively reduced in the non-uniform channel of formation between the D of pole, reduces the pressure drift in thin-film transistor channel region domain
It moves, thus the electrology characteristic of enhanced film transistor, and then enhance the service life of flexible panel.
As other interchangeable embodiments, flexible panel in the embodiment of the present invention, for uniform channel, along bending
An at least electrode in the first electrode and second electrode of the thin film transistor (TFT) of axis arrangement with bend axis have it is overlapping, and can be real
Existing embodiment only applies non-uniform channel, along the first electrode and the second electricity of the thin film transistor (TFT) of bending axis arrangement
An at least electrode in extremely has overlapping situation using relatively broad with bending axis.
Specifically, by curve graph in fig. 6, it is evident that for uniform channel, and not having shown in Fig. 6 A and 6B
There is the pressure drift along the thin film transistor (TFT) of bending axis arrangement it is obvious that, it is evident that for non-in curve graph in fig. 6b
The pressure drift of uniform channel is weaker.For pressure drift because after the channel region generation stress rupture of thin film transistor (TFT), film is brilliant
The carrier of body pipe channel region, which changes, generates pressure drift.Therefore, use non-uniform channel can be with flexible panel
The degeneration of thin film transistor (TFT) electrology characteristic caused by stress is largely weakened, and then the bending for increasing flexible panel makes
With number, and then improve the service life of flexible panel.
Embodiment 3
The present invention provides a kind of flexible panel, including flexible back plate and several be arranged in flexible back plate are arranged in multiple groups array
The thin film transistor (TFT) of cloth, as shown in Fig. 2, each thin film transistor (TFT) includes source S and drain D, the shape between source S and drain D
At channel region, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Fig. 2.The flexible face in Fig. 2
The bending axle position of plate is in the center of the channel region of thin film transistor (TFT), and the axial region of the bending axis of flexible panel is stress
Concentration zones, the stress concentration region are to be easier to generate the region of stress defect when flexible panel is bent, and can be seen by Fig. 2
The stress concentration region in non-uniform channel belongs to the partial region of non-uniform channel out, without the bending axis in flexible panel
Axial region is non-stressed concentration zones.In Fig. 2, source S by drain D semi-surrounding and with bending axis it is parallel, and bend axis with it is soft
Property panel transverse direction it is parallel, therefore usually flexible panel can generally bend in the widthwise direction thereof, channel region is located at
On the region that source S is formed by drain D semi-surrounding.In Fig. 2, along the thin film transistor (TFT) of bending axis arrangement, flexible panel
Axis and source S and drain D are bent in the presence of overlapping, because the channel region along the thin film transistor (TFT) of bending axis arrangement is non-homogeneous ditch
Road, the overlapping region for bending axis and non-uniform channel are less than maximum of the non-uniform channel on bending axis in the projection on bending axis
Projection.In fig. 2 it is possible to find out that the overlapping region for bending axis and non-uniform channel only accounts for the partial region of non-uniform channel,
The area of stress concentration region present on non-uniform channel is smaller.In Fig. 2, the thin film transistor (TFT) of every group pattern arrangement is located at same
On one straight line, and the opening direction of the drain D of each thin film transistor (TFT) is consistent, and same straight line is located in Fig. 2 i.e. in a line
Array arrangement thin film transistor (TFT) drain D opening direction both facing to a left side, the row in same a line herein be and bending axis
Parallel direction.In Fig. 2, it is evident that along the stress concentration region of the channel region of the thin film transistor (TFT) of bending axis arrangement
Areal extent is smaller, can be substantially reduced stress rupture flexible panel, and then the number resistant to bending of flexible panel can be improved, and increases
The electrology characteristic of strong film transistor.
Embodiment 4
A kind of flexible panel is provided in the embodiment of the present invention, as shown in fig. 7, comprises flexible back plate and several settings are in flexibility
It is in the thin film transistor (TFT) of multiple groups array arrangement on backboard, each thin film transistor (TFT) includes source S and drain D, in source S and drain electrode
Channel region is formed between D, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Fig. 7.In Fig. 7
In, the bending axle position of flexible panel is in the center of the channel region of thin film transistor (TFT), and the axial direction of the bending axis of flexible panel
Region is stress concentration region, which is to be easier to generate the region of stress defect when flexible panel is bent, and is led to
Crossing Fig. 7 can be seen that the stress concentration region in non-uniform channel belongs to the partial region of non-uniform channel, without in flexible face
The axial region of the bending axis of plate is non-stressed concentration zones.In Fig. 7, source S is by drain D semi-surrounding and parallel with axis is bent,
And it is parallel with the transverse direction of flexible panel to bend axis, therefore usually flexible panel can generally be bent in the widthwise direction thereof,
Channel region is located on the region that source S is formed by drain D semi-surrounding.In Fig. 7, along multiple film crystals of bending axis arrangement
The source electrode and drain electrode of pipe exists with bending axis respectively to be overlapped, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bending
Axis intersects with drain electrode and overlaps with bending shaft portion, and projection of the overlapping region of bending axis and non-uniform channel on bending axis is small
In maximal projection of the non-uniform channel on bending axis.In Fig. 7, the thin film transistor (TFT) of every group pattern arrangement is located at a line
On straight line, and the opening direction of the drain D of each thin film transistor (TFT) is consistent, is herein parallel with bending axis with the row in a line
Direction, wherein drain D is directed toward in one end of source S, source S can be carried out semi-surrounding, and same straight line, that is, same is located in Fig. 7
The opening direction of the drain D of the thin film transistor (TFT) of array arrangement on row is both facing to the right side, in flexible panel bending axial direction
Channel region is generally stress concentration region, and in Fig. 7, the overlapping region for bending axis and non-uniform channel only accounts for non-uniform channel
The partial region that partial region, i.e. stress concentration region in non-uniform channel belong to non-uniform channel, without in flexible panel
The non-stressed concentration zones of axial region of axis are bent, it is evident that the areal extent of the stress concentration region of non-uniform channel is smaller,
It can be substantially reduced stress rupture flexible panel, and then the number resistant to bending of flexible panel, enhanced film transistor can be improved
Electrology characteristic.
Embodiment 5
Flexible panel in the embodiment of the present invention, including flexible back plate and several be arranged in flexible back plate are in multiple groups array
The thin film transistor (TFT) of arrangement, as shown in figure 8, each thin film transistor (TFT) includes source S and drain D, between source S and drain D
Channel region is formed, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in fig. 8.In fig. 8, soft
The bending axle position of property panel is in the center of the channel region of thin film transistor (TFT), and the axial region of the bending axis of flexible panel is
Stress concentration region, the stress concentration region are to be easier to generate the region of stress defect when flexible panel is bent, can by Fig. 8
The partial region for belonging to non-uniform channel with the stress concentration region found out in non-uniform channel, without the bending in flexible panel
The axial region of axis is non-stressed concentration zones.In fig. 8, along the multiple thin film transistor (TFT)s and source electrode and drain electrode point of bending axis arrangement
Exist with bending axis it is overlapping, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bend axis with drain intersect and with
It bends shaft portion to overlap, the overlapping region for bending axis and non-uniform channel is bending the projection on axis less than non-uniform channel curved
Roll over the maximal projection on axis.In fig. 8, source S is by drain D semi-surrounding and parallel with axis is bent, and bends axis and flexible panel
Transverse direction it is parallel, therefore usually flexible panel can generally bend in the widthwise direction thereof, channel region is located at source S quilt
On the region that drain D semi-surrounding is formed.In fig. 8, the thin film transistor (TFT) of every group pattern arrangement is located at on the straight line of a line, and
The opening direction of the drain D of two neighboring thin film transistor (TFT) on the contrary, be herein the direction parallel with bending axis with the row in a line,
Wherein drain D is directed toward in one end of source S, and source S can be carried out semi-surrounding by drain D.In fig. 8, axis and non-homogeneous ditch are bent
The overlapping region in road only accounts for the partial region of non-uniform channel, i.e. stress concentration region in non-uniform channel belongs to non-uniform channel
Partial region, without flexible panel bending axis the non-stressed concentration zones of axial region, it is evident that non-uniform channel
Stress concentration region areal extent it is smaller, stress rupture flexible panel can be substantially reduced, and then flexible panel can be improved
Number resistant to bending, the electrology characteristic of enhanced film transistor.
Embodiment 6
A kind of flexible panel is provided in the embodiment of the present invention, including flexible back plate and several be arranged in flexible back plate are in more
The thin film transistor (TFT) of group pattern arrangement, as shown in figure 9, each thin film transistor (TFT) includes source S and drain D, in source S and drain electrode
Channel region is formed between D, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Fig. 9.In Fig. 9
In, the bending axle position of flexible panel in the center of thin film transistor (TFT), along multiple thin film transistor (TFT)s of bending axis arrangement source electrode and
Drain electrode exist with bending axis it is overlapping, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bend axis with drain intersect and
Overlapping with bending shaft portion, projection of the overlapping region of bending axis and non-uniform channel on bending axis is less than non-uniform channel and exists
Bend the maximal projection on axis.In Fig. 9, the axial region of the bending axis of flexible panel is stress concentration region, which concentrates
Area is to be easier to generate the region of stress defect when flexible panel is bent, as seen in Figure 9 in non-uniform channel
Stress concentration region belong to the partial region of non-uniform channel, without the non-stressed collection of axial region of the bending axis in flexible panel
Middle area.In Fig. 9, source S is by drain D semi-surrounding and parallel with axis is bent, and the transverse direction for bending axis and flexible panel is flat
Row, therefore usually flexible panel can generally be bent in the widthwise direction thereof, channel region is located at source S by drain D semi-surrounding
On the region of formation.The stress concentration region is the region that flexible panel is easier to generation stress defect when bending, without
The non-stressed concentration zones of axial region of the bending axis of flexible panel.In Fig. 9, the thin film transistor (TFT) of every group pattern arrangement is located at same
On the straight line of a line, and the opening direction of the drain D of each adjacent two thin film transistor (TFT) is consistent, herein with the row in a line be with
The parallel direction of axis is bent, wherein drain D is directed toward in one end of source S, and source S can be carried out semi-surrounding by drain D, in Fig. 9
Positioned at the thin film transistor (TFT) that same straight line is with the array arrangement in a line, and the drain D of each adjacent two thin film transistor (TFT)
Opening direction is consistent, and the channel region in flexible panel bending axial direction is generally stress concentration region, in Fig. 9, bends axis
The partial region of non-uniform channel is only accounted for the overlapping region of non-uniform channel, i.e. stress concentration region in non-uniform channel belongs to
The partial region of non-uniform channel, without the non-stressed concentration zones of axial region of the bending axis in flexible panel, it is evident that
The areal extent of the stress concentration region of non-uniform channel is smaller, can be substantially reduced stress rupture flexible panel, and then can mention
The number resistant to bending of high flexibility panel, the electrology characteristic of enhanced film transistor.
Embodiment 7
The embodiment of the present invention provides a kind of flexible panel, including flexible back plate and several be arranged in flexible back plate are in multiple groups
The thin film transistor (TFT) of array arrangement, as shown in Figure 10, each thin film transistor (TFT) include source S and drain D, in source S and drain D
Between form channel region, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Fig. 3.In Figure 10
In, the bending axle position of flexible panel in the center of thin film transistor (TFT), along bending axis arrangement multiple thin film transistor (TFT)s and source electrode and
Drain electrode exists with bending axis respectively to be overlapped, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bending axis and drain electrode phase
It hands over and overlapping with bending shaft portion, projection of the overlapping region of bending axis and non-uniform channel on bending axis is less than non-homogeneous ditch
Maximal projection of the road on bending axis, in Figure 10, the axial region of the bending axis of flexible panel is stress concentration region, the stress
Concentration zones are to be easier to generate the region of stress defect when flexible panel is bent, as seen in Figure 10 in non-homogeneous ditch
Stress concentration region in road belongs to the partial region of non-uniform channel, and the axial region without the bending axis in flexible panel non-is answered
Power concentration zones.In Figure 10, source S is by drain D semi-surrounding and parallel with axis is bent, and bends the transverse direction side of axis and flexible panel
To parallel, therefore usually flexible panel can generally be bent in the widthwise direction thereof, and channel region is located at source S by drain D partly
It surrounds on the region formed.The stress concentration region is the region that generation stress defect is easier to when flexible panel is bent, and
Not in the non-stressed concentration zones of axial region of the bending axis of flexible panel.Stress in non-uniform channel as seen in Figure 10
Concentration zones belong to the partial region of non-uniform channel, without the non-stressed concentration zones of axial region of the bending axis in flexible panel.
In Figure 10, the thin film transistor (TFT) of every group pattern arrangement is located at on the straight line of a line, and per adjacent three thin film transistor (TFT)s
The opening direction of drain D is consistent, is herein the direction parallel with bending axis with the row in a line, wherein one end of source S is directed toward
Source S can be carried out semi-surrounding by drain D, drain D, and the channel region in flexible panel bending axial direction is generally stress collection
Middle area, in Figure 10, the overlapping region of bending axis and non-uniform channel only accounts for the partial region of non-uniform channel, i.e., non-homogeneous ditch
Stress concentration region in road belongs to the partial region of non-uniform channel, and the axial region without the bending axis in flexible panel non-is answered
Power concentration zones can be substantially reduced stress rupture it is evident that the areal extent of the stress concentration region of non-uniform channel is smaller
Flexible panel, and then the number resistant to bending of flexible panel, the electrology characteristic of enhanced film transistor can be improved.
Embodiment 8
Flexible panel in the embodiment of the present invention, including flexible back plate and several be arranged in flexible back plate are in multiple groups array
The thin film transistor (TFT) of arrangement, as shown in figure 11, each thin film transistor (TFT) include source S and drain D, between source S and drain D
Channel region is formed, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Figure 11.In Figure 11,
The bending axle position of flexible panel is in the center of thin film transistor (TFT), along the multiple thin film transistor (TFT)s and source electrode and drain electrode of bending axis arrangement
Exist respectively with bending axis it is overlapping, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bend axis with drain intersect and
Overlapping with bending shaft portion, projection of the overlapping region of bending axis and non-uniform channel on bending axis is less than non-uniform channel and exists
Bend the maximal projection on axis.In Figure 11, the axial region of the bending axis of flexible panel is stress concentration region, which concentrates
Area is to be easier to generate the region of stress defect when flexible panel is bent, by can be seen that in Figure 11 in non-uniform channel
In stress concentration region belong to the partial region of non-uniform channel, the axial region without the bending axis in flexible panel is non-stressed
Concentration zones.In Figure 11, source S is by drain D semi-surrounding and parallel with axis is bent, and bends the transverse direction of axis and flexible panel
In parallel, therefore usually flexible panel can generally be bent in the widthwise direction thereof, and channel region is located at source S and is wrapped by drain D half
It encloses on the region to be formed.In Figure 11, two neighboring thin film transistor (TFT) is not same in the thin film transistor (TFT) of every group pattern arrangement
On capable straight line, the opening direction of the corresponding drain D of thin film transistor (TFT) of group pattern arrangement is consistent, herein in a line
Row be with the parallel direction of bending axis, wherein drain D is directed toward in one end of source S, and source S can be carried out semi-surrounding by drain D.
As other interchangeable embodiments, two neighboring thin film transistor (TFT) is not same in the thin film transistor (TFT) of every group pattern arrangement
It is herein the direction parallel with bending axis, the leakage of the thin film transistor (TFT) of group pattern arrangement with the row in a line on capable straight line
The opening direction of pole D is consistent, i.e., the opening direction of the drain D of two neighboring thin film transistor (TFT) is both facing to the right side, as shown in figure 12.?
In Figure 11 and Figure 12, it is also believed that the thin film transistor (TFT) in adjacent two column is staggered, in figs. 11 and 12, axis and non-is bent
The overlapping region of uniform channel only accounts for the partial region of non-uniform channel, i.e. stress concentration region in non-uniform channel belongs to non-equal
The partial region of even channel, without the non-stressed concentration zones of axial region of the bending axis in flexible panel, it is evident that non-equal
The areal extent of the stress concentration region of even channel is smaller, can be substantially reduced stress rupture flexible panel, and then can be improved soft
The number resistant to bending of property panel, the electrology characteristic of enhanced film transistor.
Embodiment 9
A kind of flexible panel is provided in the embodiment of the present invention, including flexible back plate and several be arranged in flexible back plate are in more
The thin film transistor (TFT) of group pattern arrangement, as shown in figure 13, each thin film transistor (TFT) includes source S and drain D, in source S and leakage
Channel region is formed between the D of pole, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Figure 13.?
In Figure 13, multiple thin film transistor (TFT)s and source of the bending axle position of flexible panel in the center of thin film transistor (TFT), along bending axis arrangement
Pole and drain electrode exist with bending axis overlapping respectively, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bends axis and leak
Pole is intersected and is overlapped with shaft portion is bent, and projection of the overlapping region of bending axis and non-uniform channel on bending axis is equal less than non-
Maximal projection of the even channel on bending axis, in Figure 13, the axial region of the bending axis of flexible face flexible panel is stress collection
Middle area, the stress concentration region are to be easier to generate the region of stress defect when flexible panel is bent, and can be seen by Figure 13
The stress concentration region in non-uniform channel belongs to the partial region of non-uniform channel out, without the bending axis in flexible panel
The non-stressed concentration zones of axial region.In Figure 13, source S is by drain D semi-surrounding and parallel with axis is bent, and bends axis and flexibility
The transverse direction of panel is parallel, therefore usually flexible panel can generally be bent in the widthwise direction thereof, and channel region is located at source
On the region that pole S is formed by drain D semi-surrounding.The stress concentration region is to be easier to generation stress when flexible panel is bent to lack
Sunken region, without the non-stressed concentration zones of axial region of the bending axis in flexible panel.It is non-homogeneous as seen in Figure 13
Stress concentration region in channel belongs to the partial region of non-uniform channel, and the axial region without the bending axis in flexible panel is non-
Stress concentration region.In Figure 13, two neighboring thin film transistor (TFT) is not in same a line in the thin film transistor (TFT) of every group pattern arrangement
On straight line, and the corresponding drain D of two neighboring thin film transistor (TFT) opening direction on the contrary, herein with the row in a line be with
The parallel direction of axis is bent, or is summarised as two neighboring thin film transistor (TFT) not on the straight line of same a line, it is corresponding
On the contrary, wherein drain D is directed toward in one end of source S, source S can be carried out semi-surrounding, schemed the opening direction of drain D by drain D
In 13, two neighboring thin film transistor (TFT) is not on the straight line of same a line in the thin film transistor (TFT) of every group pattern arrangement, and adjacent two
The opening direction of the corresponding drain D of a thin film transistor (TFT) is on the contrary, be herein the side parallel with bending axis with the row in a line
To.In Figure 13, it is also believed that the thin film transistor (TFT) in adjacent two column is staggered.In Figure 13, axis and non-homogeneous is bent
The overlapping region of channel only accounts for the partial region of non-uniform channel, i.e. stress concentration region in non-uniform channel belongs to non-homogeneous ditch
The partial region in road, without the non-stressed concentration zones of axial region of the bending axis in flexible panel, it is evident that non-homogeneous ditch
The areal extent of the stress concentration region in road is smaller, can be substantially reduced stress rupture flexible panel, and then flexible face can be improved
The number resistant to bending of plate, the electrology characteristic of enhanced film transistor.
Embodiment 10
A kind of flexible panel is provided in the embodiment of the present invention, including flexible back plate and several be arranged in flexible back plate are in more
The thin film transistor (TFT) of group pattern arrangement, as shown in figure 14, each thin film transistor (TFT) includes source S and drain D, in source S and leakage
Channel region is formed between the D of pole, certain each thin film transistor (TFT) further includes grid G, and grid G is not particularly shown in Figure 14.?
In Figure 14, multiple thin film transistor (TFT)s and source of the bending axle position of flexible panel in the center of thin film transistor (TFT), along bending axis arrangement
Pole and drain electrode exist with bending axis overlapping respectively, wherein bending axis is parallel with source electrode but overlapping with source electrode portion, bends axis and leak
Pole is intersected and is overlapped with shaft portion is bent, and projection of the overlapping region of bending axis and non-uniform channel on bending axis is equal less than non-
Maximal projection of the even channel on bending axis, the axial region of the bending axis of flexible panel is stress concentration region in Figure 14, should
Stress concentration region is to be easier to generate the region of stress defect when flexible panel is bent, as seen in Figure 14 non-equal
Stress concentration region in even channel belongs to the partial region of non-uniform channel, without the axial region of the bending axis in flexible panel
Non-stressed concentration zones.In Figure 14, source S is by drain D semi-surrounding and parallel with axis is bent, and bends the cross of axis and flexible panel
It is parallel to direction, therefore usually flexible panel can generally be bent in the widthwise direction thereof, channel region is located at source S and is drained
On the region that D semi-surrounding is formed.Stress concentration region is the region that generation stress defect is easier to when flexible panel is bent, and
It is not non-stressed concentration zones in the axial region of the bending axis of flexible panel.Answering in non-uniform channel as seen in Figure 14
Power concentration zones belong to the partial region of non-uniform channel, without the non-stressed concentration of axial region of the bending axis in flexible panel
Area.In Figure 14, in the thin film transistor (TFT) of every group pattern arrangement two neighboring thin film transistor (TFT) not on the straight line of same a line, and
The opening direction of the corresponding drain D of each adjacent two thin film transistor (TFT) is identical, is and bending axis with the row in a line herein
Parallel direction, wherein drain D is directed toward in one end of source S, and source S can be carried out semi-surrounding by drain D, in Figure 14, every group
Two neighboring thin film transistor (TFT) is not on the straight line of same a line in the thin film transistor (TFT) of array arrangement, and each adjacent two film is brilliant
The opening direction of the corresponding drain D of body pipe is identical.In Figure 14, it is also believed that being the thin film transistor (TFT) in adjacent two column
Staggered, the channel region in flexible panel bending axial direction is generally stress concentration region, it is evident that non-homogeneous ditch
The areal extent of the stress concentration region in road is smaller, can be substantially reduced stress rupture flexible panel, and then flexible face can be improved
The number resistant to bending of plate, the electrology characteristic of enhanced film transistor.
The embodiment of the present invention provides a kind of device with display panel, including the flexible panel in above-described embodiment.
In conclusion the flexible panel in the embodiment of the present invention and the device with display panel, by along bending axis row
An at least electrode and bending axis in the source electrode and drain electrode of multiple thin film transistor (TFT)s of cloth is overlapping, and along the multiple of bending axis arrangement
The channel region of thin film transistor (TFT) is non-uniform channel, which can effectively reach film caused by reduction stress
Electric transistor is degenerated, and can increase the bending number of flexible panel, and then improve the service life of flexible panel.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of flexible panel is arranged in the flexible back plate with several in the thin of multiple groups array arrangement including flexible back plate
Film transistor, each thin film transistor (TFT) include the first electrode and second electrode for being paired into source electrode and drain electrode, in first electricity
Channel region is formed between pole and the second electrode, which is characterized in that the flexible panel has bending axis, along the bending
At least one of described first electrode and the second electrode of multiple thin film transistor (TFT)s of axis arrangement and the bending
Axis is overlapping.
2. flexible panel according to claim 1, which is characterized in that multiple films along the bending axis arrangement are brilliant
The channel region of body pipe is non-uniform channel.
3. flexible panel according to claim 2, which is characterized in that the bending axis and the non-uniform channel it is overlapping
Region is less than maximal projection of the non-uniform channel on the bending axis in the projection on the bending axis, and/or, it is described
Non-uniform channel and the bending axis no overlap.
4. flexible panel according to claim 1, which is characterized in that the first electrode is parallel with the bending axis, institute
Stating second electrode is semi-surrounding structure, and one end of the first electrode is located in the semi-surrounding structure, and the channel region is set
It sets in the region that the first electrode is formed by the second electrode semi-surrounding.
5. flexible panel according to claim 4, which is characterized in that the thin film transistor (TFT) of array arrangement described in every group is located at
With on the straight line of a line, and the opening direction of the second electrode is consistent.
6. flexible panel according to claim 4, which is characterized in that the thin film transistor (TFT) of array arrangement described in every group is located at
With on the straight line of a line, and the opening direction of the second electrode of the two neighboring thin film transistor (TFT) is opposite.
7. flexible panel according to claim 4, which is characterized in that the thin film transistor (TFT) of array arrangement described in every group is located at
With on the straight line of a line, and per adjacent at least two thin film transistor (TFT) described in second electrode opening direction it is consistent.
8. flexible panel according to any one of claim 1 to 7, which is characterized in that described in adjacent two column
Thin film transistor (TFT) is staggered.
9. flexible panel according to claim 4, which is characterized in that the second electrode with the semi-surrounding structure
Include:
First straight line is vertically arranged with the bending axis；
Two second straight lines are arranged in parallel with the bending axis, and are connected to the both ends of the first straight line.
10. a kind of device with display panel, which is characterized in that the device with display panel is claim 1 to 9
Any one of described in flexible panel.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109800535A (en) * | 2019-02-14 | 2019-05-24 | 京东方科技集团股份有限公司 | A kind of design method and computer-readable medium of thin film transistor (TFT) |
| CN110648641A (en) * | 2019-09-27 | 2020-01-03 | 云谷（固安）科技有限公司 | Driving circuit for display screen, display screen and display terminal |
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| US20170031389A1 (en) * | 2015-07-28 | 2017-02-02 | Lg Display Co., Ltd. | Backplane substrate and flexible display using the same |
| KR20170039537A (en) * | 2015-10-01 | 2017-04-11 | 엘지디스플레이 주식회사 | Flexible Display Device |
| CN107425013A (en) * | 2017-05-11 | 2017-12-01 | 成都京东方光电科技有限公司 | Dot structure, array base palte and display device |
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| CN102053430A (en) * | 2009-11-03 | 2011-05-11 | 上海天马微电子有限公司 | Liquid crystal display device |
| US20170031389A1 (en) * | 2015-07-28 | 2017-02-02 | Lg Display Co., Ltd. | Backplane substrate and flexible display using the same |
| KR20170039537A (en) * | 2015-10-01 | 2017-04-11 | 엘지디스플레이 주식회사 | Flexible Display Device |
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| CN110648641A (en) * | 2019-09-27 | 2020-01-03 | 云谷（固安）科技有限公司 | Driving circuit for display screen, display screen and display terminal |
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