CN108957264B - GIS test system and method under action of VFTO and lightning overvoltage - Google Patents
GIS test system and method under action of VFTO and lightning overvoltage Download PDFInfo
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- CN108957264B CN108957264B CN201810980548.5A CN201810980548A CN108957264B CN 108957264 B CN108957264 B CN 108957264B CN 201810980548 A CN201810980548 A CN 201810980548A CN 108957264 B CN108957264 B CN 108957264B
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- 238000012360 testing method Methods 0.000 title claims abstract description 109
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- 208000025274 Lightning injury Diseases 0.000 claims abstract description 58
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- 238000012546 transfer Methods 0.000 claims abstract description 21
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- 239000003990 capacitor Substances 0.000 claims description 84
- 238000002955 isolation Methods 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
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- 238000009413 insulation Methods 0.000 abstract description 17
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- 238000013461 design Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 2
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- 230000004888 barrier function Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
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Abstract
The application discloses a GIS test system and a GIS test method under the action of VFTO and lightning stroke overvoltage, wherein the GIS test system comprises a VFTO and lightning stroke double overvoltage generating device, a GIS test device and a data processing and analyzing device, wherein the VFTO and lightning stroke double overvoltage generating device comprises a master control board, a double-power automatic transfer switch, a VFTO generating assembly, a lightning stroke overvoltage generating assembly and a first high-voltage T-shaped head, the master control board controls the double-power automatic transfer switch to be connected with the VFTO generating assembly or the lightning stroke overvoltage generating assembly, and the VFTO generating assembly or the lightning stroke overvoltage generating assembly is connected with the GIS test device through the first high-voltage T-shaped head; the data processing and analyzing device is connected with the GIS experimental device. The GIS test system provided by the application realizes discharge test detection on the GIS under the double actions of VFTO and lightning overvoltage, and improves the detection effect of the GIS insulation performance.
Description
Technical Field
The application relates to the technical field of overvoltage insulation tests, in particular to a GIS test system and a GIS test method under the action of VFTO and lightning overvoltage.
Background
The power system is an important infrastructure of society, and its reliability has an important influence on national economy and people's life. In recent years, gas insulated switchgear (GIS, gas Insulated Switchgear) has been widely used in power systems due to advantages such as high insulation reliability and small floor space.
In practical application, VFTO (Very Fast Transient Overvoltage, fast transient overvoltage) is generated in the GIS due to fast actions of a disconnecting switch, a circuit breaker and the like, so that the discharge phenomenon in the circuit frequently occurs, further, the accident of insulation breakdown of the GIS is frequently caused, and the occurrence of the VFTO greatly threatens the safe and reliable operation of the GIS. Research at home and abroad shows that the impulse voltage test can effectively find defects such as GIS fixed particles and structural design, and the lightning wave is more effective than operation impulse.
However, the GIS insulation structure design is checked and designed according to lightning overvoltage, and the influence on the GIS insulation performance due to the double actions of VFTO and lightning is not considered at all. Recent researches show that the detection effect of the combination of the VFTO impulse and the lightning wave on the GIS insulation performance is more effective than that of the GIS insulation performance when only the lightning wave acts. Therefore, it is highly desirable to design and test a GIS test device under the dual actions of VFTO and lightning overvoltage.
Disclosure of Invention
The application provides a GIS test system and a GIS test method under the action of VFTO and lightning overvoltage, which are used for solving the technical problem that the GIS insulation performance detection effect is poor under the action of lightning waves at present.
In order to solve the technical problems, the embodiment of the application discloses the following technical scheme:
in a first aspect, the embodiment of the application discloses a GIS test system under the double actions of VFTO and lightning stroke overvoltage, which comprises a VFTO and lightning stroke double overvoltage generating device, a GIS test device and a data processing and analyzing device, wherein,
the device comprises a main control console, a pulse amplitude control channel, a trigger control module, a VFTO generation assembly, a lightning stroke overvoltage generation assembly and a first high-voltage T-shaped head, wherein the trigger control module comprises a switch state display and a dual-power automatic transfer switch, the main control console controls the dual-power automatic transfer switch to be connected with the first channel or the second channel, and the switch state display is used for displaying the connection state of the dual-power automatic transfer switch; the first channel is connected with the lightning overvoltage generating component through a first connecting cable, the second channel is connected with the VFTO generating component through a second connecting cable, and the lightning overvoltage generating component and the VFTO generating component are connected with the GIS test device through the first high-voltage T-shaped head;
the data processing and analyzing device is connected with the GIS experimental device and is used for processing and analyzing data generated by the GIS experimental device under the double actions of VFTO and lightning overvoltage.
Optionally, the master console includes a pulse trigger button, a charging trigger button and a charging time sequence setter, and controls the VFTO generating component and the lightning overvoltage generating component to generate overvoltage through the pulse trigger button and the charging trigger button; the charging time sequence setter is used for setting the charging time of the VFTO generating assembly and the lightning overvoltage generating assembly.
Optionally, the VFTO generating assembly includes a high-voltage isolation box, a pulse steepening gap, an insulating partition, a discharge cable and a discharge joint, wherein a third wall bushing, a first high-voltage silicon stack, a first capacitor, a first spark ball gap, a first resistor, a second capacitor, a second resistor, a second spark ball gap, a third capacitor, a first wave-regulating module and a fourth wall bushing are disposed in the high-voltage isolation box,
the third wall bushing is arranged on one side of the high-voltage isolation box, one end of the third wall bushing is connected with the second connecting cable, and the other end of the third wall bushing is connected with the first high-voltage silicon stack; the first high-voltage silicon stack, the first resistor, the second resistor, the first wave-regulating module and the fourth wall bushing are sequentially connected in series, the first capacitor and the first spark ball gap are connected to the junction of the first high-voltage silicon stack and the first resistor, the second capacitor and the second spark ball gap are connected to the junction of the first resistor and the second resistor, and the third capacitor is connected to the junction of the second resistor and the first wave-regulating module; two ends of the second capacitor are respectively connected with the first resistor and the first spark ball gap, and two ends of the third capacitor are respectively connected with the second resistor and the second spark ball gap;
the fourth wall bushing is arranged on the other side of the high-voltage isolation box, the pulse steepening gap is connected with the fourth wall bushing, and the insulating partition plate is positioned between the pulse steepening gap and the fourth wall bushing; the pulse steepening gap, the overvoltage loading cable and the discharging connector are sequentially connected in series, and the discharging connector is connected with the first high-voltage T-shaped head.
Optionally, the lightning overvoltage generating component comprises a high-voltage isolation box, a lightning stroke pulse output cable, a lightning stroke pulse input cable and a lightning stroke pulse loading cable, wherein a first wall bushing, a second high-voltage silicon stack, a sixth capacitor, a fourth spark ball gap, a fourth resistor, a fifth capacitor, a third spark ball gap, a third resistor, a fourth capacitor, a second wave regulating module, a reverse series isolation spark ball gap and a fifth wall bushing are arranged in the high-voltage isolation box,
the first wall bushing and the third wall bushing are arranged on the same side of the high-voltage isolation box, one end of the first wall bushing is connected with the first connecting cable, and the other end of the first wall bushing is connected with the second high-voltage silicon stack; the second high-voltage silicon stack, the fourth resistor, the third resistor, the second wave-regulating module, the reverse series isolation spark ball gap and the fifth wall bushing are sequentially connected in series, the sixth capacitor and the fourth spark ball gap are connected to the junction of the second high-voltage silicon stack and the fourth resistor, the fifth capacitor and the third spark ball gap are connected to the junction of the fourth resistor and the third resistor, and the fourth capacitor is connected to the junction of the third resistor and the second wave-regulating module; two ends of the fifth capacitor are respectively connected with the fourth resistor and the fourth spark ball gap, and two ends of the fourth capacitor are respectively connected with the third resistor and the third spark ball gap;
the fifth wall bushing and the fourth wall bushing are arranged on the same side of the high-voltage isolation box, and the lightning stroke pulse output cable is connected with the fifth wall bushing; the lightning stroke pulse output cable is connected with the second connecting cable through the lightning stroke pulse input cable, and the lightning stroke pulse output cable is connected with the discharging connector through the lightning stroke pulse loading cable.
Optionally, a grounding component is further arranged in the high-voltage isolation box, the grounding component comprises a second wall bushing, a first charging resistor and a second charging resistor, wherein,
the second wall bushing and the first wall bushing are arranged on the same side of the high-voltage isolation box, and one end of the second wall bushing is grounded; the second wall bushing, the first charging resistor and the second charging resistor are sequentially connected in series;
the two ends of the first charging resistor are respectively connected with the first capacitor and the first spark ball gap, and the two ends of the first charging resistor are respectively connected with the fourth spark ball gap and the sixth capacitor; and two ends of the second charging resistor are respectively connected with the second capacitor and the second spark ball gap, and two ends of the second charging resistor are respectively connected with the fifth capacitor and the third spark ball gap.
Optionally, the GIS experiment device includes a second high-voltage T-shaped head, an inflation line conductor, and an inflation line housing, where the first high-voltage T-shaped head is connected with the second high-voltage T-shaped head through a high-voltage cable, and the second high-voltage T-shaped head is connected with the inflation line conductor; the inflation circuit shell is connected with an inflation circuit connecting flange, and the inflation circuit connecting flange is provided with an ultrahigh frequency sensor.
Optionally, the data processing analysis device comprises a filter box, a signal acquisition processing module and a PC, wherein the ultrahigh frequency sensor is connected with the filter box, and the filter box, the signal acquisition processing module and the PC are sequentially connected in series.
In a second aspect, the embodiment of the application also discloses a GIS test method under the dual actions of VFTO and lightning overvoltage, which comprises the following steps:
connecting the wires of the GIS test system under the action of the VFTO and the lightning overvoltage according to a wiring diagram;
the method comprises the steps that a VFTO and lightning stroke double overvoltage generating device is utilized to generate VFTO and lightning stroke overvoltage respectively, and the VFTO and the lightning stroke overvoltage are loaded to a GIS test device;
the GIS experimental device generates GIS experimental data under the double overvoltage actions of the VFTO and the lightning overvoltage;
and repeatedly obtaining a plurality of groups of GIS test data, and processing and analyzing the GIS test data through a data processing and analyzing device to obtain the GIS hysteresis coefficient.
Optionally, the rated operating voltage U of the GIS to be tested k Loading the sample on a GIS test device;
if the GIS experimental device does not generate breakdown phenomenon, increasing the overvoltage amplitude to U according to the pressurizing step delta U v Repeating the test;
if the GIS experimental device breaks down, recording the repetition number N v Overvoltage amplitude U v And an interval time t between VFTO and lightning overvoltage v 。
Alternatively to this, the method may comprise,
calculating GIS breakdown probability intensity Q according to formula (1) 0 ；
And (3) calculating a pulse hysteresis coefficient alpha when the GIS experimental device breaks down according to a formula (2).
Compared with the prior art, the application has the beneficial effects that:
the GIS test system comprises a VFTO and lightning double overvoltage generating device, a GIS test device and a data processing and analyzing device, wherein the VFTO and lightning double overvoltage generating device can generate the double overvoltages of the VFTO and the lightning overvoltage, the double overvoltages (the VFTO and the lightning overvoltage) are loaded to the GIS test device, test data of the GIS test device under the double overvoltages are obtained, and the data processing and analyzing device detects the GIS insulation performance according to the test data. According to the application, the double overvoltage is generated by the VFTO and lightning stroke double overvoltage generating device, so that the GIS can be subjected to discharge test detection under the double actions of the VFTO and the lightning stroke overvoltage, and the detection effect of the GIS insulation performance is more effective.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
In order to more clearly illustrate the technical solution of the present application, the drawings that are needed in the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic structural diagram of a GIS test system under the action of VFTO and lightning overvoltage provided by the embodiment of the application;
fig. 2 is a flowchart of a GIS test method under the effects of VFTO and lightning overvoltage provided by an embodiment of the present application.
Detailed Description
In order to make the technical solution of the present application better understood by those skilled in the art, the technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
Referring to fig. 1, a schematic structural diagram of a GIS test system under the effects of VFTO and lightning overvoltage is provided in an embodiment of the present application.
As shown in fig. 1, the GIS test system under the action of VFTO and lightning strike overvoltage provided by the embodiment of the present application includes a VFTO and lightning strike dual overvoltage generating device 58, a GIS test device 59 and a data processing and analyzing device 60, wherein,
the VFTO and lightning dual overvoltage generating device 58 comprises a master console 1, a pulse amplitude control channel 6, a trigger control module 7, a VFTO generating component, a lightning overvoltage generating component and a first high-voltage T-shaped head 48, wherein the master console 1 is connected with the pulse amplitude control channel 6, the pulse amplitude control channel 6 is used for controlling the charging time or the voltage amplitude, and the amplitude of the trigger pulse can be determined jointly by the length of the charging time and the charging voltage.
The master control board 1 controls the trigger control module 7 through the pulse amplitude control channel 6, the trigger control module 7 comprises a switch state display 8 and a dual-power automatic transfer switch 9, the master control board 1 controls the dual-power automatic transfer switch 9 to be connected with the first channel 10 or the second channel 11, and the switch state display 8 is used for displaying the connection state of the dual-power automatic transfer switch 9, for example, the dual-power automatic transfer switch 9 is in a neutral gear, connected to the first channel 10 or connected to the second channel 11.
The master console 1 comprises a pulse trigger button 2, a charging trigger button 3, an emergency brake button 4 and a charging time sequence setter 5, wherein the pulse trigger button 2 is used for controlling generation of pulse signals, and the pulse signals act on the VFTO generating assembly and the lightning stroke overvoltage generating assembly to control the generation of overvoltage. The charging trigger button 3 is used for controlling the charging of the VFTO generating component and the lightning overvoltage generating component, and after the charging trigger button 3 is pressed, the VFTO generating component or the lightning overvoltage generating component starts to charge. The emergency brake button 4 is used for emergency braking VFTO and lightning stroke double overvoltage generating means when a malfunction occurs. The charging time sequence setter 5 is used for setting the charging time of the VFTO generating component and the lightning overvoltage generating component.
The first channel 10 is connected to a lightning overvoltage generating component via a first connection cable 12 for controlling the lightning overvoltage generating component to generate lightning overvoltage. The second pass 11 is connected to the VFTO generating component through a second connection cable 13 for controlling the VFTO generating component to generate VFTO. The lightning overvoltage generating component and the VFTO generating component are connected with the GIS test device through a first high-voltage T-shaped head 48 and are used for loading double overvoltages of the VFTO and the lightning overvoltage to the GIS test device.
The VFTO generating assembly includes a high voltage isolation box 14, a pulse steeper gap 46, an insulating barrier 45, a discharge cable 44, and a discharge fitting 47, wherein,
the high-voltage isolation box 14 is internally provided with a third wall bushing 17, a first high-voltage silicon stack 18, a first capacitor 19, a first spark ball gap 20, a first resistor 21, a second capacitor 22 and a second resistor 23, a second spark ball gap 24, a third capacitor 25, a first wave-regulating module 26 and a fourth wall bushing 28, the third wall bushing 17 is arranged on one side of the high-voltage isolation box 14, one end of the third wall bushing 17 is connected with the second connecting cable 13, and the other end of the third wall bushing 17 is connected with the first high-voltage silicon stack 18; the first high voltage silicon stack 18, the first resistor 21, the second resistor 23, the first tuning module 26 and the fourth wall bushing 28 are connected in series in order. The first capacitor 19 and the first spark gap 20 are connected to the junction of the first high voltage silicon stack 18 and the first resistor 21, the second capacitor 22 and the second spark gap 24 are connected to the junction of the first resistor 21 and the second resistor 23, and the third capacitor 25 is connected to the junction of the second resistor 23 and the first wave regulating module 26. The second capacitor 22 has both ends connected to the first resistor 21 and the first spark gap 20, respectively, and the third capacitor 25 has both ends connected to the second resistor 23 and the second spark gap 24, respectively.
The fourth wall bushing 28 is arranged on the other side of the high voltage isolation box 14, and a pulse steepening gap 46 is connected to the fourth wall bushing 28, the pulse steepening gap 46 serving to steepen the impact pulse further. An insulating spacer 45 is located between the pulse steepening gap 46 and the fourth wall bushing 28 for placement of the impulse oversmall creating anti-series interference. The pulse steepening gap 46, the discharge cable 44 and the discharge connector 47 are sequentially connected in series, the discharge connector 47 is connected with the first high-voltage T-shaped head 48, the first high-voltage T-shaped head 48 acts on the GIS test device 59, and the impact pulse further steepened by the pulse steepening gap 46 is loaded into the GIS test device 59 through the discharge cable 44, the discharge connector 47 and the first high-voltage T-shaped head 48.
When the master console 1 charges the VFTO generating component through the second channel 11, the first high-voltage silicon stack 18 is used as a passage, so that charging current passes through; the first spark gap 20 and the second spark gap 24 act as a short circuit and do not work; the first resistor 21 and the second resistor 23 allow current to flow, and charge the first capacitor 19, the second capacitor 22 and the third capacitor 25 through the first resistor and the second resistor, so that the whole circuit is protected, and the excessive current in the circuit is prevented.
The method for the master console 1 to control the VFTO generating component to generate VFTO is as follows:
setting the charging time of the second channel 11 by the charging time series setter 5 of the master console 1; the master console 1 controls the dual-power automatic transfer switch 9 to be connected with the second channel 11, starts the charging trigger button 3, and charges the first capacitor 19, the second capacitor 22 and the third capacitor 25 in the VFTO generating assembly through the second channel 11; after the charging is finished, the dual-power automatic transfer switch 9 returns to the neutral position, and then the pulse trigger button 2 is started to transmit the impact pulse to the VFTO generating component; after the VFTO generating component is charged, the larger current breaks through the first spark gap 20 and the second spark gap 24, so that the energy accumulated in the first capacitor 19, the second capacitor 22 and the third capacitor 25 is instantaneously released, the first resistor 21 and the second resistor 23 are short-circuited, and the impact pulse is further steeped in the pulse steeped gap 46 after passing through the broken first spark gap 20, the second spark gap 24 and the first wave regulating module 26, so as to generate VFTO overvoltage, and the VFTO is loaded into the GIS test device through the discharge cable 44, the discharge connector 47 and the first high-voltage T-shaped head 48.
The lightning overvoltage generating component comprises a high-voltage isolation box 14, a lightning stroke pulse output cable 41, a lightning stroke pulse input cable 42 and a lightning stroke pulse loading cable 43, wherein a first wall bushing 15, a second high-voltage silicon stack 38, a sixth capacitor 37, a fourth spark ball gap 36, a fourth resistor 35, a fifth capacitor 34, a third spark ball gap 33, a third resistor 32, a fourth capacitor 31, a second wave regulating module 30, a reverse series isolation spark ball gap 27 and a fifth wall bushing 29 are arranged in the high-voltage isolation box 14,
the first wall bushing 15 and the third wall bushing 17 are disposed on the same side of the high voltage isolation box 14, one end of the first wall bushing 15 is connected with the first connection cable 12, and the other end of the first wall bushing 15 is connected with the second high voltage silicon stack 38. The second high-voltage silicon stack 38, the fourth resistor 35, the third resistor 32, the second wave regulating module 30, the reverse series isolation spark gap 27 and the fifth wall bushing 29 are sequentially connected in series, the sixth capacitor 37 and the fourth spark gap 36 are connected to the junction of the second high-voltage silicon stack 38 and the fourth resistor 35, the fifth capacitor 34 and the third spark gap 33 are connected to the junction of the fourth resistor 35 and the third resistor 32, the fourth capacitor 31 is connected to the junction of the third resistor 32 and the second wave regulating module 30, two ends of the fifth capacitor 34 are respectively connected with the fourth resistor 35 and the fourth spark gap 36, and two ends of the fourth capacitor 31 are respectively connected with the third resistor 32 and the third spark gap 33.
The fifth wall bushing 29 and the fourth wall bushing 28 are arranged on the same side of the high-voltage isolation box 14, a lightning stroke pulse output cable 41 is connected with the fifth wall bushing 29, the lightning stroke pulse output cable 41 is connected with the second connecting cable 13 through a lightning stroke pulse input cable 42, and the lightning stroke pulse output cable 41 is connected with the discharge joint 47 through a lightning stroke pulse loading cable 43.
When the master console 1 charges the lightning overvoltage generating component through the first channel 10, the second high-voltage silicon stack 38 is a channel when receiving a forward voltage signal, and is conductive at this time, and current can pass through. The fourth spark gap 36 is disconnected from the third spark gap 33 by virtue of the isolation. The fourth resistor 35 and the third resistor 32 are both paths that allow current to flow. The second tuning module 30 is not turned on when no large current flows. The purpose of the reverse string isolation spark gap 27 is to prevent reverse strings of overvoltage such as VFTO during triggering and also to be inoperative during charging.
The method for controlling the lightning overvoltage generating component to generate the lightning overvoltage by the master console 1 is as follows:
setting the charging time of the first channel 10 by the charging time series setter 5 of the master console 1; the master console 1 controls the dual-power automatic transfer switch 9 to be connected with the first channel 10, starts the charging trigger button 3, and charges a sixth capacitor 37, a fifth capacitor 34 and a fourth capacitor 31 in the lightning overvoltage generating component through the first channel 10; after the charging is finished, the dual-power automatic transfer switch 9 returns to a neutral position, and then the pulse trigger button 2 is started to transmit impact pulses to the lightning overvoltage generating component; after the lightning overvoltage generating component is charged, the fourth spark gap 36, the third spark gap 33 and the reverse string isolation spark gap 27 are broken through by larger current, so that energy accumulated in the sixth capacitor 37, the fifth capacitor 34 and the fourth capacitor 31 is released, the fourth resistor 35 and the third resistor 32 are short-circuited, and the impact pulse generates lightning overvoltage after passing through the broken fourth spark gap 36, the third spark gap 33, the second wave regulating module 30 and the reverse string isolation spark gap 27, and the lightning overvoltage is loaded to the GIS test device through the lightning pulse output cable 41, the lightning pulse input cable 42, the lightning pulse loading cable 43, the discharge connector 47 and the first high-voltage T-shaped head.
A grounding assembly is also provided within the high voltage isolation box 14, the grounding assembly including a second wall bushing 16, a first charging resistor 39 and a second charging resistor 40, wherein,
the second wall bushing 16 and the first wall bushing 15 are disposed on the same side of the high-voltage isolation box 14, one end of the second wall bushing 16 is grounded, and the second wall bushing 16, the first charging resistor 39 and the second charging resistor 40 are sequentially connected in series. Both ends of the first charging resistor 39 are respectively connected with the first capacitor 19 and the first spark gap 20, and both ends of the first charging resistor 39 are respectively connected with the fourth spark gap 36 and the sixth capacitor 37; both ends of the second charging resistor 40 are connected to the second capacitor 22 and the second spark gap 24, respectively, and both ends of the second charging resistor 40 are connected to the fifth capacitor 34 and the third spark gap 33, respectively.
The first charging resistor 39 and the second charging resistor 40 function as: 1. as a grounding passage, in the charging process of the VFTO generating assembly or the lightning overvoltage generating assembly, the charging circuit forms a closed passage; 2. as a protection component, when the excessive current in the circuit is prevented from generating, the current threatens the safety of other devices, and when the excessive current in the circuit is generated, the excessive current can be introduced into the ground.
The GIS test device 59 comprises a second high-voltage T-shaped head 50, an inflation line conductor 51 and an inflation line shell 52, wherein the first high-voltage T-shaped head 48 is connected with the second high-voltage T-shaped head 50 through a high-voltage cable 49, the second high-voltage T-shaped head 50 is connected with the inflation line conductor 51, the VFTO and the lightning overvoltage generated by the VFTO and lightning overvoltage double-overvoltage generating device 58 are loaded onto the inflation line conductor 51 through the first high-voltage T-shaped head 48, the high-voltage cable 49 and the second high-voltage T-shaped head 50, and the inflation line conductor 51 generates GIS test data under the double overvoltage effect. The outside of the inflation line conductor 51 is wrapped with an inflation line housing 52, an inflation line connecting flange 53 is connected to the inflation line housing 52, an ultrahigh frequency sensor 54 is mounted on the inflation line connecting flange 53, and the ultrahigh frequency sensor 54 is used for collecting GIS test data generated by the inflation line conductor 51.
The data processing and analyzing device 60 is connected with the GIS test device 59 and is used for processing and analyzing GIS test data generated by the GIS test device 59 under the double actions of VFTO and lightning overvoltage. The data processing and analyzing device 60 comprises a filter box 55, a signal acquisition and processing module 56 and a PC57, wherein the ultrahigh frequency sensor 54 is connected with the filter box 55, the signal acquisition and processing module 56 and the PC57 are sequentially connected in series, the filter box 55 is used for filtering interference information in GIS test data, the filtered test data are transmitted to the signal acquisition and processing module 56, the signal acquisition and processing module 56 analyzes and processes the test data, GIS insulation performance is obtained through calculation, and the result is transmitted to the PC57 for display, so that the detection by workers is facilitated.
The GIS test system under the action of the VFTO and the lightning stroke overvoltage comprises a VFTO and lightning stroke double overvoltage generating device, a GIS test device and a data processing and analyzing device, wherein the VFTO and lightning stroke double overvoltage generating device comprises a total control board, a VFTO generating component and a lightning stroke overvoltage generating component, the total control board controls the VFTO generating component to generate the VFTO, controls the lightning stroke overvoltage generating component to generate the lightning stroke overvoltage, and double loads the VFTO and the lightning stroke overvoltage into the GIS test device to acquire test data generated by the GIS test device under the action of the double overvoltage, and then the data processing and analyzing device processes and analyzes the test data. The GIS test system provided by the embodiment of the application can simulate and complete the GIS test under the double actions of the VFTO and the lightning overvoltage, realizes the discharge test detection of the GIS under the double actions of the VFTO and the lightning overvoltage, has more effective detection effect on the GIS insulation performance by combining the VFTO and the lightning overvoltage compared with the GIS test under the action of the lightning overvoltage only, thereby providing the insulation structure design of the GIS and ensuring the normal operation of a power system.
Based on the GIS test system under the action of the VFTO and the lightning overvoltage provided by the embodiment of the application, the embodiment of the application also provides a GIS test method under the action of the VFTO and the lightning overvoltage.
As shown in FIG. 2, the GIS test method under the action of VFTO and lightning overvoltage provided by the embodiment of the application comprises the following steps:
s100: and connecting the wires of the GIS test system under the action of the VFTO and the lightning overvoltage according to a wiring diagram.
And connecting the VFTO with a GIS test system under the action of lightning overvoltage according to a wiring diagram, and ensuring that the dual-power automatic transfer switch is in a neutral position.
S200: and respectively generating VFTO and lightning overvoltage by utilizing a VFTO and lightning overvoltage generating device, and loading the VFTO and lightning overvoltage to a GIS experimental device.
After the GIS test system is connected, setting a charging time sequence setting diagram in the master console, and setting charging time of the first channel and the second channel; the master control board controls the dual-power automatic transfer switch to be connected to the first channel, starts a charging trigger button, and charges a fourth capacitor, a fifth capacitor and a sixth capacitor in the lightning overvoltage generating assembly by the first channel according to the set charging time; after the lightning overvoltage generating assembly is charged, the master control console controls the dual-power automatic transfer switch to be connected to the second channel of the child, and the master control console charges the first capacitor, the second capacitor and the third capacitor in the VFTO generating assembly through the second channel according to the set charging time; after the VFTO generating assembly is charged, the master console controls the dual-power automatic transfer switch to return to the neutral position; after the charging trigger button 3s is started and the time above, the pulse trigger button is started, and impulse pulses are sent to the VFTO generating assembly and the lightning stroke overvoltage generating assembly, so that the VFTO generating assembly generates VFTO, and the lightning stroke overvoltage generating assembly generates lightning stroke overvoltage.
S300: the GIS experimental device generates GIS experimental data under the double overvoltage actions of VFTO and lightning overvoltage.
After the VFTO and lightning stroke overvoltage generating device is used for generating the VFTO and lightning stroke overvoltage respectively, the VFTO and lightning stroke overvoltage is loaded on the GIS test device through the first high-voltage T-shaped head and the second high-voltage T-shaped head which is connected to the GIS test device through the high-voltage cable. And the inflation line conductor of the GIS experimental device generates GIS test data under the double overvoltage actions of VFTO and lightning overvoltage, and the GIS test data is measured by the ultrahigh frequency sensor.
Adjusting the setting of the VFTO and lightning stroke double overvoltage generating device to generate required waveforms, and measuring the rated working voltage U of the GIS to be measured k As a starting point, and selecting about U k As a step size for pressurization; in U k The U is pulsed in sequence to initiate the application of VFTO and lightning strike overvoltage horizontally k Loading the voltage to a GIS experimental device, and if the GIS experimental device does not generate breakdown phenomenon, increasing the sequence overvoltage amplitude to U v ＝(U k +DeltaU), continuing the test, and recording the repeated test times until the GIS experimental device breaks down; when GIS experimental device appearsRecording the repeated test times N when the breakdown phenomenon occurs v Overvoltage amplitude U v And an interval time t between VFTO and lightning overvoltage v And test result U v -N v -t v And (5) storing.
S400: and repeatedly acquiring a plurality of groups of GIS test data, and processing the GIS test data through a data processing and analyzing device to obtain the GIS hysteresis coefficient.
After the GIS test data are collected, the GIS test data are processed and analyzed by a data processing and analyzing device,
first, GIS breakdown probability intensity Q is performed 0 Is calculated as follows:
in the above, N v 、U v All are experimental data recorded in the test. The property of the insulating gas in the GIS can be partially reflected through the GIS breakdown probability intensity, so as to further define the influence effect of the VFTO and lightning sequence overvoltage on the gas insulating intensity in the GIS, and the U of the GIS is controlled according to the action of the sequence VFTO and the lightning sequence overvoltage v -N v -t v Relationship.
When the GIS experimental device breaks down under the action of VFTO and lightning overvoltage, the coefficient relation between the breakdown voltage and the sequential VFTO and lightning overvoltage pulse falling gradient, namely the pulse hysteresis coefficient alpha, is as follows:
in the above, Q 0 To test the GIS breakdown probability intensity, N v For the number of repetitions of the pressing process, U v The value for each pressurization.
The larger the value of the pulse hysteresis coefficient alpha obtained through calculation is, the higher the compressive strength of the insulating gas in the GIS is, and the stronger the capability of resisting the sequence type VFTO and the lightning overvoltage is; conversely, the smaller the value of the hysteresis coefficient alpha,the lower the compressive strength of the insulating gas in the GIS, the poorer the capability of bearing the sequential VFTO and lightning overvoltage. Optionally, the pulse hysteresis coefficient alpha of the GIS with good insulation effect is 10 6 The above.
In order to improve the accuracy of the test result, the steps S100, S200 and S300 are repeated for a plurality of times to obtain a plurality of sets of GIS test data, so that the test data are more representative, and meanwhile, the insulation recovery of the GIS system is also checked.
The specific implementation steps of the GIS test method under the action of the VFTO and the lightning overvoltage provided by the embodiment of the application can refer to the GIS test system provided by the embodiment, and are not repeated here.
The GIS test method under the action of the VFTO and the lightning overvoltage is based on the VFTO and the lightning overvoltage, and the GIS test under the double actions of the VFTO and the lightning overvoltage is simulated, so that the test method is more effective in detecting the GIS insulation performance compared with the GIS test method under the action of the lightning overvoltage only.
It should be noted that in this specification, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure of the application herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
The embodiments of the present application described above do not limit the scope of the present application.
Claims (9)
1. A GIS test system under the action of VFTO and lightning stroke overvoltage is characterized by comprising a VFTO and lightning stroke double overvoltage generating device, a GIS test device and a data processing and analyzing device, wherein,
the device comprises a main control console, a pulse amplitude control channel, a trigger control module, a VFTO generation assembly, a lightning stroke overvoltage generation assembly and a first high-voltage T-shaped head, wherein the trigger control module comprises a switch state display and a dual-power automatic transfer switch, the main control console controls the dual-power automatic transfer switch to be connected with the first channel or the second channel, and the switch state display is used for displaying the connection state of the dual-power automatic transfer switch; the first channel is connected with the lightning overvoltage generating component through a first connecting cable, the second channel is connected with the VFTO generating component through a second connecting cable, and the lightning overvoltage generating component and the VFTO generating component are connected with the GIS test device through the first high-voltage T-shaped head;
the VFTO generating assembly comprises a high-voltage isolation box, a pulse steepening gap, an insulating partition board, a discharge cable and a discharge joint, wherein a third wall bushing, a first high-voltage silicon stack, a first capacitor, a first spark ball gap, a first resistor, a second capacitor, a second resistor, a second spark ball gap, a third capacitor, a first wave regulating module and a fourth wall bushing are arranged in the high-voltage isolation box,
the third wall bushing is arranged on one side of the high-voltage isolation box, one end of the third wall bushing is connected with the second connecting cable, and the other end of the third wall bushing is connected with the first high-voltage silicon stack; the first high-voltage silicon stack, the first resistor, the second resistor, the first wave-regulating module and the fourth wall bushing are sequentially connected in series, the first capacitor and the first spark ball gap are connected to the junction of the first high-voltage silicon stack and the first resistor, the second capacitor and the second spark ball gap are connected to the junction of the first resistor and the second resistor, and the third capacitor is connected to the junction of the second resistor and the first wave-regulating module; two ends of the second capacitor are respectively connected with the first resistor and the first spark ball gap, and two ends of the third capacitor are respectively connected with the second resistor and the second spark ball gap;
the fourth wall bushing is arranged on the other side of the high-voltage isolation box, the pulse steepening gap is connected with the fourth wall bushing, and the insulating partition plate is positioned between the pulse steepening gap and the fourth wall bushing; the pulse steepening gap, the discharge cable and the discharge connector are sequentially connected in series, and the discharge connector is connected with the first high-voltage T-shaped head;
the data processing and analyzing device is connected with the GIS test device and is used for processing and analyzing data generated by the GIS test device under the double actions of VFTO and lightning overvoltage.
2. The GIS test system of claim 1, wherein the master console includes a pulse trigger button, a charge trigger button, and a charge time series setter, the master console controlling the VFTO generating assembly and the lightning strike overvoltage generating assembly to generate an overvoltage through the pulse trigger button and the charge trigger button; the charging time sequence setter is used for setting the charging time of the VFTO generating assembly and the lightning overvoltage generating assembly.
3. The GIS test system of claim 1, wherein the lightning strike overvoltage generating assembly comprises a high voltage isolation box, a lightning strike pulse output cable, a lightning strike pulse input cable, and a lightning strike pulse loading cable, wherein a first wall bushing, a second high voltage silicon stack, a sixth capacitor, a fourth spark gap, a fourth resistor, a fifth capacitor, a third spark gap, a third resistor, a fourth capacitor, a second wave regulating module, a reverse series isolation spark gap, and a fifth wall bushing are disposed in the high voltage isolation box,
the first wall bushing and the third wall bushing are arranged on the same side of the high-voltage isolation box, one end of the first wall bushing is connected with the first connecting cable, and the other end of the first wall bushing is connected with the second high-voltage silicon stack; the second high-voltage silicon stack, the fourth resistor, the third resistor, the second wave-regulating module, the reverse series isolation spark ball gap and the fifth wall bushing are sequentially connected in series, the sixth capacitor and the fourth spark ball gap are connected to the junction of the second high-voltage silicon stack and the fourth resistor, the fifth capacitor and the third spark ball gap are connected to the junction of the fourth resistor and the third resistor, and the fourth capacitor is connected to the junction of the third resistor and the second wave-regulating module; two ends of the fifth capacitor are respectively connected with the fourth resistor and the fourth spark ball gap, and two ends of the fourth capacitor are respectively connected with the third resistor and the third spark ball gap;
the fifth wall bushing and the fourth wall bushing are arranged on the same side of the high-voltage isolation box, and the lightning stroke pulse output cable is connected with the fifth wall bushing; the lightning stroke pulse output cable is connected with the second connecting cable through the lightning stroke pulse input cable, and the lightning stroke pulse output cable is connected with the discharging connector through the lightning stroke pulse loading cable.
4. The GIS test system according to claim 3, wherein a grounding assembly is further disposed in the high voltage isolation box, the grounding assembly comprising a second wall bushing, a first charging resistor, a second charging resistor, wherein,
the second wall bushing and the first wall bushing are arranged on the same side of the high-voltage isolation box, and one end of the second wall bushing is grounded; the second wall bushing, the first charging resistor and the second charging resistor are sequentially connected in series;
the two ends of the first charging resistor are respectively connected with the first capacitor and the first spark ball gap, and the two ends of the first charging resistor are respectively connected with the fourth spark ball gap and the sixth capacitor; and two ends of the second charging resistor are respectively connected with the second capacitor and the second spark ball gap, and two ends of the second charging resistor are respectively connected with the fifth capacitor and the third spark ball gap.
5. The GIS test system of claim 1, wherein the GIS test device comprises a second high voltage T-head, an inflation line conductor, and an inflation line housing, the first high voltage T-head being connected to the second high voltage T-head by a high voltage cable, the second high voltage T-head being connected to the inflation line conductor; the inflation circuit shell is connected with an inflation circuit connecting flange, and the inflation circuit connecting flange is provided with an ultrahigh frequency sensor.
6. The GIS test system according to claim 5, wherein the data processing and analyzing device comprises a filter box, a signal acquisition and processing module and a PC, the ultrahigh frequency sensor is connected with the filter box, and the filter box, the signal acquisition and processing module and the PC are sequentially connected in series.
7. A method for testing GIS under the action of VFTO and lightning strike overvoltage, which is applied to a GIS test system under the action of VFTO and lightning strike overvoltage as claimed in any one of claims 1 to 6, and comprises the following steps:
connecting the wires of the GIS test system under the action of the VFTO and the lightning overvoltage according to a wiring diagram;
charging a first capacitor, a second capacitor and a third capacitor in the VFTO generating assembly through a second channel according to the set charging time; the master console controls the dual-power automatic transfer switch to return to the neutral position;
after the charging trigger button 3s is started and the time above, impulse pulses are sent to the VFTO generating assembly and the lightning stroke overvoltage generating assembly; the VFTO generating component generates VFTO, and the lightning overvoltage generating component generates lightning overvoltage;
the method comprises the steps that a VFTO and lightning stroke double overvoltage generating device is utilized to generate VFTO and lightning stroke overvoltage respectively, and the VFTO and the lightning stroke overvoltage are loaded to a GIS test device;
the GIS test device generates GIS test data under the double overvoltage actions of the VFTO and the lightning overvoltage;
and repeatedly obtaining a plurality of groups of GIS test data, and processing and analyzing the GIS test data through a data processing and analyzing device to obtain the GIS hysteresis coefficient.
8. The GIS test method of claim 7, wherein the GIS test apparatus generates GIS test data under the dual overvoltage effects of the VFTO and the lightning strike overvoltage, comprising:
rated operating voltage U of GIS to be tested k Loading the sample on a GIS test device;
if the GIS test device does not generate breakdown phenomenon, increasing the overvoltage amplitude to U according to the pressurizing step delta U v Repeating the test;
if the GIS test device breaks down, recording the repetition number N v Overvoltage amplitude U v And an interval time t between VFTO and lightning overvoltage v 。
9. The GIS test method according to claim 8, wherein the GIS test data is processed and analyzed by a data processing and analyzing device to obtain GIS hysteresis coefficients, comprising:
calculating GIS breakdown probability intensity Q according to formula (1) 0 ；
And (3) calculating a pulse hysteresis coefficient alpha when the GIS test device breaks down according to a formula (2).
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