CN108955963A - It is a kind of can repeat impact stress monitoring sensor - Google Patents

It is a kind of can repeat impact stress monitoring sensor Download PDF

Info

Publication number
CN108955963A
CN108955963A CN201810946111.XA CN201810946111A CN108955963A CN 108955963 A CN108955963 A CN 108955963A CN 201810946111 A CN201810946111 A CN 201810946111A CN 108955963 A CN108955963 A CN 108955963A
Authority
CN
China
Prior art keywords
shell
protective layer
piezoelectric membrane
epoxide
pvdf piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810946111.XA
Other languages
Chinese (zh)
Inventor
齐宝欣
李宜人
乔丕忠
曹君尧
孙永承
郭美衫
胡恩淼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenyang Jianzhu University
Original Assignee
Shenyang Jianzhu University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenyang Jianzhu University filed Critical Shenyang Jianzhu University
Priority to CN201810946111.XA priority Critical patent/CN108955963A/en
Publication of CN108955963A publication Critical patent/CN108955963A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/16Measuring force or stress, in general using properties of piezoelectric devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

The invention discloses it is a kind of can repeat impact stress monitoring sensor, including shell up-protective layer, shell lower protective layer, epoxide-resin glue, black insulation glue-line, PVDF piezoelectric membrane and conducting wire;The upper outer lower face surface of PVDF piezoelectric membrane is equipped with black insulation glue-line;Epoxide-resin glue setting is outside black insulation glue-line;Shell lower protective layer surface is provided with groove, and groove is both ends semicircle and interlude rectangle;The PVDF piezoelectric membrane with black insulation glue-line and epoxide-resin glue is placed in groove;Shell up-protective layer and shell lower protective layer are bonded together by epoxide-resin glue, PVDF piezoelectric membrane is sealed;Conducting wire is drawn out of shell, is connected respectively at PVDF piezoelectric membrane positive and negative anodes.The present invention makes simple, strong applicability, cost-effective easy for installation.

Description

It is a kind of can repeat impact stress monitoring sensor
Technical field
The present invention relates to sensor field, in particular to it is a kind of can repeat impact stress monitoring sensor.
Background technique
Currently, utilizing the piezoelectric film sensor of (PVDF, poly (vinylidene Fluoride)) Piezoelectric Film for Designing It is mainly pasted onto the surface of the structure of test, test structure is caused structural vibration response by impact, but when PVDF piezoelectricity passes Sensor is pasted at institute's geodesic structure shock point, when can not resist repeat impact effect, so that punching effectively cannot be measured accurately A stress value at hitting.
Summary of the invention
In order to solve the above technical problems, the object of the present invention is to provide it is a kind of can repeat impact stress monitoring sensor, Specific technical solution is as follows:
It is a kind of can repeat impact stress monitoring sensor, including shell up-protective layer, shell lower protective layer, epoxy resin Glue, black insulation glue-line, PVDF piezoelectric membrane and conducting wire;
The upper outer lower face surface of the PVDF piezoelectric membrane is equipped with black insulation glue-line;
The epoxide-resin glue setting is outside black insulation glue-line;
Shell lower protective layer surface is provided with groove, and groove is both ends semicircle and interlude rectangle;
The PVDF piezoelectric membrane with black insulation glue-line and epoxide-resin glue is placed in groove;
It is described that shell up-protective layer and shell lower protective layer are bonded together by epoxide-resin glue, PVDF piezoelectricity is thin Film sealing;
The conducting wire is drawn out of shell, is connected respectively at PVDF piezoelectric membrane positive and negative anodes.
It is described it is a kind of can repeat impact stress monitoring sensor, preferred embodiment is the shell up-protective layer and shell Body lower protective layer is steel.
It is described it is a kind of can repeat impact stress monitoring sensor, preferred embodiment is that the PVDF piezoelectric membrane is adopted LDT0-028K model is produced with Jing Liang company of the U.S..
It is described it is a kind of can repeat impact stress monitoring sensor, preferred embodiment is that the black insulating layer is adjusting Grease is constituted.
Beneficial effects of the present invention: wrapping up PVDF piezoelectric membrane using two-sided steel plate protective layer, constitutes repeat impact monitoring Sensor, and encapsulated with epoxy glue layer, and use two-sided steel plate shell, wherein a piece of plane steel plate shell, another is Have reeded steel plate shell, and PVDF piezoelectric membrane is placed wherein, another plate plane steel plate shell is covered on PVDF piezoelectricity Film surface is pasted together using epoxide-resin glue between most latter two steel plate shell.Treated in this way repeatedly Impact stress monitoring sensor can be affixed directly to institute's geodesic structure or component surface, and will not make the biography because of repeat impact The inside of sensor is impaired, this sensor shock signal has sensitive monitoring and the high property of accuracy, can also be embedded to structure or Component inside monitoring of structures or component inside impact load stress value.The invention patent can be pasted at surveyed shock point, with Just the impact load stress value for the structural elements that is hit is obtained;The utility model patent can effectively obtain repeat impact effect The impact stress numerical value of flowering structure or component, according to surveyed impact stress numerical value, data can be to the structure under the percussion Or one-to-one relationship is established in component repeat impact stress and response.Percussion can cause the large deformation of structure or component, The invention patent can measure each impact stress value of structure or component under repeat impact effect, and according to impact stress value One-to-one relationship is established with blastic deformation.
Disclosed above is only the specific embodiment of the invention patent, and still, the utility model embodiment is not limited to This, the changes that any person skilled in the art can think of should all fall into the scope of protection of the patent of the present invention.
Therefore there is significant economic benefit using this structure.
Detailed description of the invention
Fig. 1 be it is a kind of can repeat impact stress monitoring sensor structure decomposition diagram;
Fig. 2 be it is a kind of can repeat impact stress monitoring sensor internal structural schematic diagram.
In figure, 1, shell up-protective layer;2, shell lower protective layer;3, epoxy glue layer;4, black insulation glue-line;5, PVDF piezoelectric membrane;6, groove;7, conducting wire.
Specific embodiment
One kind as shown in Figs. 1-2 can repeat impact stress monitoring sensor, including protected under shell up-protective layer 1, shell Sheath 2, epoxide-resin glue 3, black insulation glue-line 4, PVDF piezoelectric membrane 5 and conducting wire 7;
The upper outer lower face surface of the PVDF piezoelectric membrane 5 is equipped with black insulation glue-line 4;
The setting of epoxide-resin glue 3 is outside black insulation glue-line 4;
2 surface of shell lower protective layer is provided with groove 6, and groove 6 is both ends semicircle and interlude rectangle;
The PVDF piezoelectric membrane 5 with black insulation glue-line 4 and epoxide-resin glue 3 is placed in groove 6;
It is described that shell up-protective layer 1 and shell lower protective layer 2 are bonded together by epoxide-resin glue 3, PVDF is pressed Conductive film 5 seals;
The conducting wire 7 is drawn out of shell, is connected respectively at 5 positive and negative anodes of PVDF piezoelectric membrane.
The shell up-protective layer 1 and shell lower protective layer 2 are steel.
The PVDF piezoelectric membrane 5 produces LDT0-028K model using U.S. Jing Liang company.
The black insulating layer 4 is to adjust grease to constitute.

Claims (4)

1. one kind can repeat impact stress monitoring sensor, it is characterised in that: including being protected under shell up-protective layer, shell Layer, epoxide-resin glue, black insulation glue-line, PVDF piezoelectric membrane and conducting wire;
The upper outer lower face surface of the PVDF piezoelectric membrane is equipped with black insulation glue-line;
The epoxide-resin glue setting is outside black insulation glue-line;
Shell lower protective layer surface is provided with groove, and groove is both ends semicircle and interlude rectangle;
The PVDF piezoelectric membrane with black insulation glue-line and epoxide-resin glue is placed in groove;
It is described that shell up-protective layer and shell lower protective layer are bonded together by epoxide-resin glue, PVDF piezoelectric membrane is close Envelope;
The conducting wire is drawn out of shell, is connected respectively at PVDF piezoelectric membrane positive and negative anodes.
2. one kind as described in claim 1 can repeat impact stress monitoring sensor, it is characterised in that: protected on the shell Sheath and shell lower protective layer are steel.
3. one kind as described in claim 1 can repeat impact stress monitoring sensor, it is characterised in that: the PVDF piezoelectricity Film produces LDT0-028K model using U.S. Jing Liang company.
4. one kind as described in claim 1 can repeat impact stress monitoring sensor, it is characterised in that: black insulation Layer is constituted to adjust grease.
CN201810946111.XA 2018-08-20 2018-08-20 It is a kind of can repeat impact stress monitoring sensor Pending CN108955963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810946111.XA CN108955963A (en) 2018-08-20 2018-08-20 It is a kind of can repeat impact stress monitoring sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810946111.XA CN108955963A (en) 2018-08-20 2018-08-20 It is a kind of can repeat impact stress monitoring sensor

Publications (1)

Publication Number Publication Date
CN108955963A true CN108955963A (en) 2018-12-07

Family

ID=64470660

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810946111.XA Pending CN108955963A (en) 2018-08-20 2018-08-20 It is a kind of can repeat impact stress monitoring sensor

Country Status (1)

Country Link
CN (1) CN108955963A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7462866B2 (en) 2022-07-08 2024-04-08 成都泰美克晶体技術有限公司 Piezoelectric crystal sensor packaging method and piezoelectric crystal sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205785605U (en) * 2016-05-30 2016-12-07 沈阳建筑大学 The drop impact pressure transducer of embedded type PVDF piezoelectric membrane
CN106768569A (en) * 2017-03-24 2017-05-31 沈阳建筑大学 A kind of shock measuring system of array PVDF piezoelectric membranes
CN107356359A (en) * 2017-09-19 2017-11-17 沈阳建筑大学 A kind of PVDF piezoelectric membranes Impact monitoring sensor
CN208488195U (en) * 2018-08-20 2019-02-12 沈阳建筑大学 It is a kind of can repeat impact stress monitoring sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205785605U (en) * 2016-05-30 2016-12-07 沈阳建筑大学 The drop impact pressure transducer of embedded type PVDF piezoelectric membrane
CN106768569A (en) * 2017-03-24 2017-05-31 沈阳建筑大学 A kind of shock measuring system of array PVDF piezoelectric membranes
CN107356359A (en) * 2017-09-19 2017-11-17 沈阳建筑大学 A kind of PVDF piezoelectric membranes Impact monitoring sensor
CN208488195U (en) * 2018-08-20 2019-02-12 沈阳建筑大学 It is a kind of can repeat impact stress monitoring sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7462866B2 (en) 2022-07-08 2024-04-08 成都泰美克晶体技術有限公司 Piezoelectric crystal sensor packaging method and piezoelectric crystal sensor

Similar Documents

Publication Publication Date Title
CN205785605U (en) The drop impact pressure transducer of embedded type PVDF piezoelectric membrane
CN206573245U (en) A kind of shock measuring system of array PVDF piezoelectric membranes
CN105934661A (en) Miniaturized and ruggedized wafer level MEMS force sensors
CN107356359A (en) A kind of PVDF piezoelectric membranes Impact monitoring sensor
CN203432737U (en) MEMS pressure transducer
CN106768569A (en) A kind of shock measuring system of array PVDF piezoelectric membranes
CN107219027A (en) A kind of encapsulating structure of ceramic capacitive pressure sensors
CN107228989B (en) MEMS electric field sensor with insulating sealing structure
CN208488195U (en) It is a kind of can repeat impact stress monitoring sensor
CN104374313A (en) Resistance strain gauge under harsh environment
CN108955963A (en) It is a kind of can repeat impact stress monitoring sensor
CN202511853U (en) Sealing protective column type weighting force transducer
CN207163623U (en) A kind of PVDF piezoelectric membranes Impact monitoring sensor
US20220349799A1 (en) Viscous damper fluid viscosity monitoring device and method based on piezoceramic transducers
CN207622684U (en) Bonding interface stress and strain based on Sputtering Thinfilm Technology monitors microsensor
CN212030796U (en) PVDF sensor for monitoring explosive load
CN203133110U (en) Resistance strain type acceleration sensor
CN102636105A (en) Three-directional strain measurement device
CN202267554U (en) Silicon piezoresistive type pressure sensor chip with shielding layer
CN101315269A (en) Technique for cover of electric resistance strain gage
CN109373888A (en) It is a kind of for testing the sensor for adopting seat earth deformation extent
CN204269262U (en) Multidirectional concrete dynamic stress monitoring sensor
CN208635813U (en) A kind of aggregate flush type piezoelectric transducer
CN104034252B (en) Foil gauge based on magnetic rheology elastic body
CN209264006U (en) A kind of embedded-type sensor monitored for highway health monitoring and traffic dynamic

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination