CN108949178A - Embedded photoluminescent material - Google Patents
Embedded photoluminescent material Download PDFInfo
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- CN108949178A CN108949178A CN201710361408.5A CN201710361408A CN108949178A CN 108949178 A CN108949178 A CN 108949178A CN 201710361408 A CN201710361408 A CN 201710361408A CN 108949178 A CN108949178 A CN 108949178A
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- photoluminescent material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7713—Sulfates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7792—Aluminates
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Abstract
The present invention is about a kind of embedded photoluminescent material comprising: a core carrier；And a fluorescence coating, core carrier surface is coated, and fluorescence coating includes at least two fluorescent powders.In addition, the present invention more provides another embedded photoluminescent material comprising: a core carrier；One electronics limits to material, is included in inside core carrier；And a fluorescence coating, core carrier surface is coated, and fluorescence coating includes at least one fluorescent powder.Fluorescent powder in embedded photoluminescent material of the invention carries out light mixing in material surface, and obtains a uniform mixed light.
Description
Technical field
The present invention is coated with the embedded photoluminescent material of fluorescence coating about a kind of embedded photoluminescent material, espespecially a kind of surface, when
When irradiating the fluorescent powder in fluorescence coating with light, the primitive color light that different fluorescent powders are inspired can be in embedded photoluminescent material surface
Mixing, and issue mixed light.
Background technique
In recent years, because light emitting diode (LED) has few luminous efficiency height, power consumption, long service life and assembly volume
The advantages that small, is widely used in various light emitting devices, and replaces several lighting apparatus.
However, LED is but dfficult to apply to people's livelihood illumination market, in addition to light emitting diode has heat dissipation, luminance shortage and bright
Outside degree the problems such as successively decreasing, the problem of with more can not directly inspire white light.Therefore, attempt to develop efficiently there are many research
The white light LEDs of rate, to replace existing lighting apparatus.
The white light LEDs of mainstream at present, using blue LED chip cooperation yellow light YAG fluorescent powder body, with as
White light source.Although the continuity of spectral wavelength distribution is not so good as sunlight, and coloured with white light produced by this complementary colours principle
Color uneven situation, therefore color saturation is lower.Therefore, the white light source generated by this method can only be used to low order light source, and
It cannot be widely applied to people's livelihood illumination market.
In addition, ultraviolet light-emitting diodes chip cooperation feux rouges, green light and blue light three-color phosphor can also be used, lead to
The trichromatic light mixing mechanism of red blue green is crossed, white light can be mixed into.Due to the ultraviolet leds chip excitation intensity and conversion effect used
Rate is higher, therefore can obtain the higher white light of intensity.
White light is formed using the light mixing mechanism of different colours fluorescent powder at present, by the colloid containing different colours fluorescent powder
It is covered on LED chip, a white light LEDs can be made in drying and packaging technology.However, because of fluorescent powder used in general
Partial size is larger, and the mixing of a variety of fluorescent powders is uneven, and is easy the non-uniform situation of light mixing, therefore is unable to get with institute
Need the white light LEDs of colour temperature and color rendering.In addition, more causing fluorescent powder to go out after excitation because fluorescent powder presentation is irregular
Optical uniformity reduces.
Therefore, it needs to develop a kind of fluorescent material at present, particle size is uniform and external form is regular to promote fluorescent powder
The light-emitting uniformity of body, and can in fluorescent material body surface can uniform mixed light to issue white light, and apply white light LEDs shine
On bright.
Summary of the invention
The main purpose of the present invention is to provide two kinds of embedded photoluminescent materials, with can be after light source activation, i.e., in photic hair
Luminescent material surface carries out light mixing.
To reach above-mentioned purpose, an embedded photoluminescent material of the invention a, comprising: core carrier；And a fluorescence coating, it is
Core carrier surface is coated, and fluorescence coating includes at least two fluorescent powders.Wherein, the fluorescence coating of this embedded photoluminescent material can be more
Limit to material comprising an electronics.
In addition, another embedded photoluminescent material of the invention, comprising: a core carrier；One electronics limits to material, is included in core
Heart carrier inside；And a fluorescence coating, core carrier surface is coated, and fluorescence coating includes at least one fluorescent powder.
Embedded photoluminescent material of the invention, since fluorescent powder bond is carried with the core of uniform particle size and external form rule
On body, therefore compared to the irregular fluorescent powder of existing partial size, embedded photoluminescent material of the invention uniform in light emission with higher
Property.Meanwhile existing mixing, there are many colloid of fluorescent powder, the exciting light that various fluorescent powders are issued is in fluorescent powder
Body surface face releases, and obtains a mixed light；But the various fluorescent powders on embedded photoluminescent material of the invention, various fluorescent powders
The exciting light that body is issued is to carry out light mixing in core carrier surface, and release a mixed light in core carrier surface, therefore mix
Light effect is more uniform.Furthermore embedded photoluminescent material of the invention, can in synthesis before first adjust mixed fluorescent powder body colour temperature and
Color rendering, if in the future as light emitting diode fluorescent material when, can more make light emitting diode waste material generation minimize.
In embedded photoluminescent material of the invention, it is a quantum dot, such as silicon quantum dot that electronics, which limits to material,.Preferably, this
It is CdSe:ZnS that electronics, which limits to material,.
In embedded photoluminescent material of the invention, core carrier is preferably a ball-type carrier.Wherein, the partial size of core carrier
Between 350nm to 5 μm, and the partial size of fluorescent powder and electronics limitation material can be between 10nm to 3 μm.Preferably,
The partial size of fluorescent powder and electronics limitation material can be between 10nm between 100nm.
In embedded photoluminescent material of the invention, the fluorescent powder for being included is respectively the fluorescence with different wavelength of giving out light
Powder.Wherein, the material of each fluorescent powder preferably can be selected from by ZnO, ZrO2、PbO、Y2O3、Y2O2、Zn2SiO4、Y3Al5Ol2、Y3
(AlGa)5O12Y2SiO5、LaOCl、InBO3、ZnGa2O4、ZnS、PbS、CdS、CaS、SrS、ZnxCd1-xS、Y2O2S、Gd2O2S, and
The compound of group composed by AlN, and X is between 0.1 to 0.9.
In addition, in above-mentioned fluorescent powder, can more adulterate at least one selected from by Cu, Ag, Eu, Yb, La, Cl, Tb, Al,
The member of group composed by Ce, Er, Zn, Mn, other lanthanide series (Pr, Pm, Sm, Ho, Er) and lanthanum actinium alkaline earth element
Element.Therefore, it can produce the fluorescent powder with different wavelength of giving out light.
Furthermore in embedded photoluminescent material of the invention, the material of core carrier preferably can be SiOx、TiOx, polystyrene
(PS), polymethyl methacrylate (PMMA) or melamine resin, the range of X is between 0.5~2.Preferably, core
The material of carrier is SiOx。
When exciting the light source of embedded photoluminescent material of the invention to be blue light-emitting diode, if phosphor powder layer includes feux rouges
Fluorescent powder and green light fluorescent powder then can issue white light in the light mixing of embedded photoluminescent material surface.When excitation photic hair of the invention
When the light source of luminescent material is ultraviolet light-emitting diodes, if phosphor powder layer includes that red light fluorescent powder, green light fluorescent powder and blue light are glimmering
Light powder then can issue white light in the light mixing of embedded photoluminescent material surface.
In the present invention, so-called electronics limits to material, i.e. quantum dot, refers to that fluorescence made by semiconductor material is received
Rice grain.The color of these quantum dot light emittings can change with the size of particle, and when particle is smaller, color will more level off to
The blue end of spectrum.
In embedded photoluminescent material of the invention, fluorescent powder in phosphor powder layer is by organosilane molecules, such as
APTMS, OTS or DMODCS, to be bonded on core carrier.
In embedded photoluminescent material of the invention, general hydro-thermal method, sol-gal process, co-precipitation is can be used in fluorescent powder
Method.In addition, the size of core carrier can be controlled by acid-base property and material concentration.Sol-gal process synthesizes SiOxOr TiOxAmorphous
Sphere synthesizes SiO using spray pyrolysisxOr TiOxAmorphous sphere synthesizes PS, PMMA or melamine using no emulsion process
Resin (Melamine) macromolecule sphere.
Embedded photoluminescent material of the invention, it is preferable to use nano-scale fluorescent powder, in favor of forming luminescence generated by light material
The various fluorescent powder ratios in fluorescent powder solution are adjusted before material, and it is pre- to can ensure that embedded photoluminescent material of the invention has
Fixed colour temperature and color rendering.In addition, embedded photoluminescent material of the invention more uses CdSe/ZnS quantum dot, because it can absorb UV light
And positive white light is issued, the white light colour temperature and color rendering of embedded photoluminescent material can be reinforced, and can be applied to two pole of UV-light luminous
Guan Zhong.By mixing the light emitting diode of a variety of capable of emitting different colours exciting lights, embedded photoluminescent material of the invention can be made
Light mixing spectrum is more continuous, and is able to be applied in normal lighting equipment.
Detailed description of the invention
Fig. 1 is the schematic diagram of the embedded photoluminescent material of the first form of implementation of the invention.
Fig. 2 is the schematic diagram of the embedded photoluminescent material of the second form of implementation of the invention.
[symbol description]
10 core carriers
11 fluorescence coatings
12 electronics limit to material
Specific embodiment
It is to illustrate embodiment of the present disclosure by particular specific embodiment below, those skilled in the art can be by this theory
Bright book disclosure of that understands other advantages and effect of the disclosure easily.The disclosure can also be different specific by other
Embodiment is implemented or is applied, and the various details in this specification can not also depart from this hair for different viewpoints and application
Various modifications and change are carried out under bright spirit.
The present invention provides the embedded photoluminescent material of two kinds of forms, as shown in Figures 1 and 2 respectively.Fig. 1 is that the present invention first is real
Apply the schematic diagram of the embedded photoluminescent material of form, wherein this embedded photoluminescent material includes: a core carrier 10；An and fluorescence
Layer 11 coats 10 surface of core carrier, and fluorescence coating 11 includes at least two fluorescent powders.
In addition, Fig. 2 is the schematic diagram of the embedded photoluminescent material of the second form of implementation of the invention, wherein this luminescence generated by light material
Material includes: a core carrier 10；One electronics limits to material 12, is included in inside core carrier 10；And a fluorescence coating 11, cladding
10 surface of core carrier, and fluorescence coating 11 includes at least one fluorescent powder.
General hydro-thermal method, sol-gal process can be used, made by coprecipitation in nano phosphor powder of the invention；And core
Carrier then synthesizes SiO using general sol-gal processxOr TiOxAmorphous sphere synthesizes SiO using spray pyrolysisxOr
TiOxAmorphous sphere utilizes no emulsion process synthetic polystyrene (PS), polymethyl methacrylate (PMMA) or melamine
Resin (Melamine) macromolecule sphere.
Fluorescent powder used in embedded photoluminescent material of the invention can be general existing various colors fluorescent powder.It connects down
To illustrate the production methods of several nano phosphor powders.However, the production method of nano phosphor powder of the invention and unlimited
In the following example, and fluorescent powder used in embedded photoluminescent material of the invention can be generally to be usually used in light emitting diode
Fluorescent powder, the preferably fluorescent powder of nano-scale.
Synthesize YAG:Ce3+Nano phosphor powder
By the acetic acid yttrium (Yttrium acetate tetrahydrate) of 2.5014g, the cerous acetate of 0.0251g
The aluminium isopropoxide (Aluminium isopropoxide) and 63.6ml of (Cerium acetate hydrate), 2.553g
1,4-butanediol (Isosorbide-5-Nitrae-butanediol), be placed in the autoclave of 120ml, with stirring be slowly heated solution to 300 DEG C,
And maintain this temperature 2 hours.Then, by this solution (YAG:Ce3+1,4-butanediol solution) be cooled to room temperature, and stand one week
With deposit clumps.
By the YAG:Ce of 5ml3+/ 1,4-butanediol solution adds in pure water, and the 3- aminopropyl trimethoxy of 150 μ l is added
Silane (3-Aminopropyltrimethoxysilane, APTMS) stirs 2 hours, then is centrifuged and removes APTMS, and YAG is made:
Ce3+Aqueous solution.Then, by the YAG:Ce of 5 μ l3+Aqueous solution and the PS solution of 50 μ l add in pure water, stir at 40~50 DEG C
3~5 hours.After centrifugation, filtering, drying, YAG:Ce can be made3+Nano phosphor powder, partial size are about 10~15nm.
Synthesize Y2O3:Er3+, Yb3+Nano phosphor powder
Respectively by Y2O3、Er2O3And Yb2O3It is configured to 1M nitrate solution.Then, by the Y (NO of 2.45ml3)3Solution,
Er (the NO of 0.025ml3)3Yb (the NO of solution and 0.025ml3)3Solution mixing, and the CH of 2.05g is added3COONa and
43.75ml ethylene glycol (ethylene glycol) stirs 3 hours.Then, above-mentioned mixed solution is placed in the autoclave of 60ml
In be heated to 180 DEG C, and maintain this temperature 24 hours.After being cooled to room temperature, it is centrifuged this mixed solution for several times, then dry.Then,
900 DEG C are heated to using baking oven (Muffle furnace), and is maintained 4 hours, Y can be made2O3:Er3+, Yb3+Nano-phosphor
Body, partial size are about 10~15nm.
Synthesize Y2O3:Eu3+Nano phosphor powder
By the YCl of 200ml3The EuCl of aqueous solution (0.0184M) and 200ml3Aqueous solution (0.0016M) is mixed 10 points
Clock adds 0.15 mole of urea (urea).Then, said mixture is heated to 87 DEG C, and maintains this temperature 1 hour.It connects
, after this mixture of centrifugal filtration, 85 DEG C are heated to, and maintain this temperature 12 hours.Finally, being warming up to 1050 DEG C 4 from 750 DEG C
Hour, this mixture sintering is blocking, and Y can be made2O3:Eu3+Nano phosphor powder, partial size are about 10~15nm.
SiO is synthesized with sol-gal process2Core carrier
By ammonium hydroxide (NH4OH), ethyl alcohol and water mixing, and stir 5 minutes.Then, TEOS is added as initiator, and in
It is stirred 4 hours under constant temperature, and SiO can be synthesized2Core carrier.Then, by the SiO of synthesis2Core carrier is centrifuged for several times, and is obtained
One sediment.After drying and calcination, SiO can be made2Core carrier, partial size about 500nm.
It include the SiO of CdSe/ZnS quantum dot with sol-gal process synthesis2Core carrier
By ammonium hydroxide (NH4OH), ethyl alcohol and water mixing, and stir 5 minutes.Then, TEOS is added as initiator, and in
It is stirred 4 hours under constant temperature.In SiO2When core carrier will agglomerate molding, CdSe/ZnS quantum dot is added in reaction solution,
And can synthesize include CdSe/ZnS quantum dot SiO2Core carrier.It then, by synthesis include CdSe/ZnS quantum dot
SiO2Core carrier is centrifuged for several times, and obtains a sediment.After drying and calcination, can be made includes CdSe/ZnS amount
The SiO of son point2Core carrier, partial size about 500nm.
Fluorescent powder is covered in core carrier surface
Embodiment 1
Firstly, preparing Y2O3:La3+、YAG:La3+And the fluorescent powder mixed aqueous solution of CdSe/ZnS quantum dot,
In, Y2O3:La3+Capable of emitting yellow light, YAG:La after blue light-emitting diode irradiates3+It can be sent out after blue light-emitting diode irradiates
Yellow light and CdSe/ZnS quantum dot can absorb UV light to issue positive white light out.After integrated ball detection, each fluorescent powder is adjusted
Ratio, can must have the fluorescent powder mixed solution of predetermined colour temperature and color rendering.In this present embodiment, resulting fluorescent powder
Mixed solution issues white light (colour temperature=5500K) after blue light-emitting diode irradiates.
Then, by the SiO of above-mentioned synthesis2Core carrier merging mixes in solution system containing APTMS.It then, will be above-mentioned
Fluorescent powder mixed solution adds to the SiO containing APTMS2In core carrier solution, and by the silylation of APTMS, it can make glimmering
Light powder and SiO2Core carrier bond, and in SiO2Core carrier surface forms a fluorescence coating.Finally, with decompression filter and
The embedded photoluminescent material of the present embodiment can be made in centrifugal purification reaction solution.
The embedded photoluminescent material of the present embodiment includes: a core carrier；And one be located at core carrier surface and and core
The fluorescence coating of carrier bond.Wherein, fluorescence coating includes the Y of capable of emitting yellow light2O3:La3+The YAG of fluorescent powder, capable of emitting yellow light:
La3+The CdSe/ZnS quantum dot of fluorescent powder and capable of emitting positive white light.By the ratio of the various fluorescent powders of appropriate adjustment,
The embedded photoluminescent material of the present embodiment can carry out light mixing in embedded photoluminescent material surface after blue light-emitting diode irradiates, and
Issue the white light that colour temperature is 5500K.
Embodiment 2
Firstly, preparing Y2O3:Eu3+、Y2O3:Yb3+、Y2O3:Ce3+And YAG:Ce3+Fluorescent powder mixed aqueous solution,
In, Y2O3:Eu3+Capable of emitting feux rouges, Y after blue light-emitting diode irradiates2O3:Yb3+Capable of emitting green light, Y2O3:Ce3+It is capable of emitting
Blue light and YAG:Ce3+Capable of emitting yellow light.After integrated ball detection, the ratio of each fluorescent powder is adjusted, can there must be predetermined color
The fluorescent powder mixed solution of temperature and color rendering.In this present embodiment, resulting fluorescent powder mixed solution is through blue light emitting two
After pole pipe irradiation, capable of emitting white light (colour temperature=5500K).
Then, by above-mentioned synthesis include CdSe/ZnS quantum dot SiO2Core carrier is placed in the system of solution containing APTMS
It is mixed in system.Then, above-mentioned fluorescent powder mixed solution is added in the mixed solution of APTMS and core carrier, and passed through
The silylation of APTMS can make fluorescent powder and SiO2Core carrier bond, and in SiO2Core carrier surface forms a fluorescence coating.
Finally, the embedded photoluminescent material of the present embodiment can be made with decompression suction filtration and centrifugal purification reaction solution.
The embedded photoluminescent material of the present embodiment includes: one includes the core carrier of CdSe/ZnS quantum dot；And one
In core carrier surface and with core carrier bond fluorescence coating.Wherein, fluorescence coating includes the Y of capable of emitting feux rouges2O3:Eu3+It is glimmering
The Y of light powder, capable of emitting green light2O3:Yb3+The Y of fluorescent powder, capable of emitting blue light2O3:Ce3+Fluorescent powder and capable of emitting Huang
The YAG:Ce of light3+Fluorescent powder.By the ratio of the various fluorescent powders of appropriate adjustment, the embedded photoluminescent material of the present embodiment is through indigo plant
After light-emitting diode irradiation, light mixing can be carried out in embedded photoluminescent material surface, and issue white light.
In conclusion fluorescent powder is bonded on core carrier surface by the present invention by silane molecule, being made has
The embedded photoluminescent material of one partial size and regular external form, and the light-emitting uniformity of fluorescent powder can be promoted.Meanwhile more by adjusting in advance
The ratio of whole fluorescent powder prepares the fluorescent powder mixed solution of capable of emitting predetermined colour temperature and color rendering, if therefore will be of the invention
Embedded photoluminescent material application on a light emitting diode, can promote the product qualification rate of light emitting diode.In addition, of the invention is photic
The fluorescent powder mixed on luminescent material directly carries out light mixing on embedded photoluminescent material surface after light source activation.Therefore, phase
Compared with fluorescent powder complex colloid, the mixed light issued after embedded photoluminescent material excitation of the invention is more uniform.Furthermore this
The embedded photoluminescent material of invention more passes through the fluorescent powder for mixing the different radiation wavelength of a variety of tools, and more continuous mixing can be obtained
Spectrum is more nearly natural light to issue.In this way, if embedded photoluminescent material of the invention to be applied to the hair of tool high-luminous-efficiency
Optical diode then may replace traditional lighting apparatus, and reach energy-efficient purpose.
It is only for the sake of illustration for above-described embodiment, and the protection scope that the disclosure is advocated certainly should be with right
It is required that subject to described, not just the above examples.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (24)
1. a kind of embedded photoluminescent material, comprising:
One core carrier；And
One fluorescence coating coats the core carrier surface, and the fluorescence coating includes at least two fluorescent powders.
2. embedded photoluminescent material as described in claim 1, wherein the fluorescence coating further includes electronics limitation material.
3. embedded photoluminescent material as claimed in claim 2, wherein electronics limitation material is a quantum dot.
4. embedded photoluminescent material as claimed in claim 2, wherein electronics limitation material is CdSe:ZnS.
5. embedded photoluminescent material as claimed in claim 2, wherein the partial size of electronics limitation material between 10nm to 100nm it
Between.
6. embedded photoluminescent material as described in claim 1, wherein the core carrier is ball-type.
7. embedded photoluminescent material as described in claim 1, wherein at least two fluorescent powder is respectively, and there is difference to give out light
The fluorescent powder of wavelength.
8. embedded photoluminescent material as claimed in claim 7, wherein the material of the fluorescent powder is selected from by ZnO, ZrO2、PbO、
Y2O3、Y2O2、Zn2SiO4、Y3Al5O12、Y3(AlGa)5O12Y2SiO5、LaOCl、InBO3、ZnGa2O4、ZnS、PbS、CdS、CaS、
SrS、ZnxCd1-xS、Y2O2S、Gd2O2S, and the compound of group composed by AlN, and X is between 0.1 to 0.9.
9. embedded photoluminescent material as claimed in claim 8, wherein this compound doped at least one selected from by Cu, Ag, Eu, Yb,
The element of group composed by La, Cl, Tb, Al, Ce, Er, Zn, Mn, Pr, Pm, Sm, Ho and Er.
10. embedded photoluminescent material as described in claim 1, wherein the material of the core carrier is SiOx、TiOx、PS、PMMA、
Or melamine resin, the range of X is between 0.5~2.
11. embedded photoluminescent material as described in claim 1, wherein the partial size of the core carrier is between 350nm to 5 μm.
12. embedded photoluminescent material as described in claim 1, wherein the partial size of the fluorescent powder is between 10nm to 3 μm.
13. embedded photoluminescent material as described in claim 1, wherein the partial size of the fluorescent powder is between 10nm between 100nm.
14. a kind of embedded photoluminescent material, comprising:
One core carrier；
One electronics limits to material, is included in inside the core carrier；And
One fluorescence coating coats the core carrier surface, and the fluorescence coating includes at least one fluorescent powder.
15. embedded photoluminescent material as claimed in claim 14, wherein electronics limitation material is a quantum dot.
16. embedded photoluminescent material as claimed in claim 14, wherein electronics limitation material is CdSe:ZnS.
17. embedded photoluminescent material as claimed in claim 14, wherein the partial size of electronics limitation material is between 10nm to 100nm
Between.
18. embedded photoluminescent material as claimed in claim 14, wherein the core carrier is ball-type.
19. embedded photoluminescent material as claimed in claim 14, wherein the material of the fluorescent powder is selected from by ZnO, ZrO2、
PbO、Y2O3、Y2O2、Zn2SiO4、Y3Al5O12、Y3(AlGa)5O12Y2SiO5、LaOCl、InBO3、ZnGa2O4、ZnS、PbS、CdS、
CaS、SrS、ZnxCd1-xS、Y2O2S、Gd2O2S, and the compound of group composed by AlN, and X is between 0.1 to 0.9.
20. embedded photoluminescent material as claimed in claim 19, wherein series of compounds doping at least one selected from by Cu, Ag, Eu,
The element of group composed by Yb, La, Cl, Tb, Al, Ce, Er, Zn, Mn, Pr, Pm, Sm, Ho and Er.
21. embedded photoluminescent material as claimed in claim 14, wherein the material of the core carrier is SiOx、TiOx、PS、PMMA、
Or melamine resin, the range of X is between 0.5~2.
22. embedded photoluminescent material as claimed in claim 14, wherein the partial size of the core carrier is between 350nm to 5 μm.
23. embedded photoluminescent material as claimed in claim 14, wherein the partial size of the fluorescent powder is between 10nm to 3 μm.
24. embedded photoluminescent material as claimed in claim 14, wherein the partial size of the fluorescent powder between 10nm to 100nm it
Between.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110157429A (en) * | 2019-04-28 | 2019-08-23 | 苏州君诺新材科技有限公司 | A kind of light activated ultra-wide spectrum fluorescent material of indigo plant and preparation method thereof |
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