CN108934098A - A kind of QLED driving method based on oblique wave - Google Patents
A kind of QLED driving method based on oblique wave Download PDFInfo
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- CN108934098A CN108934098A CN201710370278.1A CN201710370278A CN108934098A CN 108934098 A CN108934098 A CN 108934098A CN 201710370278 A CN201710370278 A CN 201710370278A CN 108934098 A CN108934098 A CN 108934098A
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- oblique wave
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
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Abstract
The invention discloses a kind of QLED driving method based on oblique wave, the QLED includes the hearth electrode being arranged from bottom to top, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and top electrode, one drive circuit is provided between the hearth electrode and top electrode, when QLED does not work, reverse drive signals are exported by the driving circuit, the waveform of the reverse drive signals is oblique wave.By adding the reverse current or backward voltage of ramp waveform, the potential barrier of QLED defect potential well is changed, the charge eliminating limitation and/or being gathered in potential well reduces the density of limitation charge, to further achieve the purpose that increase QLED device lifetime.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of QLED driving method based on oblique wave.
Background technique
Light emitting diode with quantum dots (QLED) receives wide in recent years as a kind of emerging high efficiency electroluminous device
General concern.The working principle and Organic Light Emitting Diode (OLED) of QLED is all external circuit by positive and negative two closely
A electrode injects electrons and holes into device respectively, and the carrier of injection is reached by carrier injection layer and transport layer to shine
Layer recombination luminescence.Unlike, in OLED, luminescent layer mainly uses organic molecule with a conjugated structure, although this kind of material
Material has the good characteristics of luminescence, but stability is not good enough.And in QLED, luminescent layer is taken on by inorganic-quantum-dot material,
Compared to conjugated organic molecule material, inorganic-quantum-dot has stronger chemical stability, therefore, the luminescent device prepared with it
With longer service life.In addition to this, the electroluminescent spectrum of QLED has narrower halfwidth, it is wanted in excitation purity
Better than OLED.There are above-mentioned excellent properties in view of QLED, market prospects are very considerable.
However, the service life of QLED is always to restrict its widely applied bottleneck, discovery is in addition to material, device in practical application
Part, preparation process optimization other than, driving QLED is also that one kind can slow down QLED light intensity attenuation, enhancing QLED service life
Method.QLED is to generally require hole transmission layer, quantum dot light emitting layer, electron transfer layer to constitute.Since every layer of energy level is different,
Therefore there are energy level differences, and in the work of QLED, charge can be gathered in the interface of energy level difference, especially and quantum dot light emitting layer
The interface of contact causes the characteristics of luminescence of quantum dot by extreme influence, further reduced luminous intensity.On the other hand, exist
All there is a large amount of defect between transport layer material molecule in every kind of material internal, such as the surface of quantum dot, these defects are also
The reason of limiting carrier.As the working time of QLED increases, more and more charge-limiteds can be greatly reduced into defect
Luminous intensity.
Thus the prior art could be improved and improve.
Summary of the invention
Place in view of above-mentioned deficiencies of the prior art, the QLED driving based on oblique wave that the purpose of the present invention is to provide a kind of
Method can reach the charge eliminating limitation and/or being gathered in potential well, reduce the density of limitation charge, increase the QLED device longevity
The purpose of life.
In order to achieve the above object, this invention takes following technical schemes：
A kind of QLED driving method based on oblique wave, the QLED include the hearth electrode, hole injection layer, sky being arranged from bottom to top
Cave transport layer, quantum dot light emitting layer, electron transfer layer and top electrode are provided with a drive between the hearth electrode and top electrode
Dynamic circuit, when QLED does not work, by the driving circuit reverse drive signals, the waveform of the reverse drive signals is oblique
Wave.
In the QLED driving method based on oblique wave, forward driving signal is the voltage or electric current of random waveform.
In the QLED driving method based on oblique wave, the reverse drive signals are backward voltage, the reversed electricity
Pressure is less than the breakdown voltage of QLED.
Specifically, the percentage that the time of the backward voltage accounts for the period is 1%-99%, the frequency of the backward voltage is not
Less than 60HZ, the amplitude of the backward voltage is -0.1V ~ -10V.
In the QLED driving method based on oblique wave, the reverse drive signals are reverse current, the reversed electricity
Stream is less than the breakdown current of QLED.
Specifically, the percentage that the time of the reverse current accounts for the period is 1%-99%, the frequency of the reverse current is not
Less than 60HZ, the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2。
In the QLED driving method based on oblique wave, the reverse drive signals are that the first oblique wave for being alternately present is anti-
To driving signal and the second oblique wave reverse drive signals, the first oblique wave reverse drive signals or second oblique wave are reversely driven
Dynamic signal is one of reverse current driving signal or backward voltage driving signal.
In the QLED driving method based on oblique wave, first urgency is also followed by after the first oblique wave reverse drive signals
The the second oblique wave reverse drive signals for slowly rising or falling after speed decline or slowly being risen or fallen after first rapidly rising.
Further, the backward voltage of the backward voltage driving signal is less than the breakdown voltage of QLED, the reversed electricity
The reverse current for flowing driving signal is less than the breakdown current of QLED.
Further, it is 1%-99% that the sum of the backward voltage and the time of reverse current, which account for the percentage in period, described
The frequency of reverse drive signals is not less than 60HZ, and the amplitude of the backward voltage is -0.1V ~ -10V, the width of the reverse current
Degree is -0.0001Am/cm-2~-1Am/cm-2。
Compared to the prior art, the QLED driving method provided by the invention based on oblique wave, the QLED include from lower and
Hearth electrode, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the top electrode of upper setting, described
It is provided with one drive circuit between hearth electrode and top electrode, when QLED does not work, reversed drive is exported by the driving circuit
Dynamic signal, the waveform of the reverse drive signals are oblique wave.By adding the reverse current or backward voltage of ramp waveform, change
The potential barrier of QLED defect potential well, the charge eliminating limitation and/or being gathered in potential well reduce the density of limitation charge, thus into
One step achievees the purpose that increase QLED device lifetime.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of QLED device in QLED driving method provided by the invention.
Fig. 2 is the waveform diagram of driving signal in first embodiment of the invention.
Fig. 3 is in first embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Fig. 4 is the waveform diagram of driving signal in second embodiment of the invention.
Fig. 5 is in second embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Fig. 6 is the waveform diagram of driving signal in third embodiment of the invention.
Fig. 7 is in third embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Fig. 8 is the waveform diagram of driving signal in fourth embodiment of the invention.
Fig. 9 is in fourth embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Specific embodiment
The present invention provides a kind of QLED driving method based on oblique wave, the electricity that can be eliminated limitation and/or be gathered in potential well
Lotus, reduces the density of limitation charge, to further achieve the purpose that increase QLED device lifetime.
To make the purpose of the present invention, technical solution and effect clearer, clear and definite, right as follows in conjunction with drawings and embodiments
The present invention is further described.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to
Limit the present invention.
Referring to Fig. 1, it is the structural representation of QLED device in the QLED driving method provided by the invention based on oblique wave
Figure, the QLED includes the hearth electrode 10, hole injection layer 20, hole transmission layer 30, quantum dot light emitting layer being arranged from bottom to top
40, electron transfer layer 50 and top electrode 60, since every layer of energy level is different, there are energy level differences, in the work of QLED,
Charge can be gathered in the interface of energy level difference, the interface especially contacted with quantum dot light emitting layer 40, on the other hand, in every kind of material
Material is internal, such as the surface of quantum dot, all there is a large amount of defect between transport layer material molecule, these defects also will limit load
Stream, the present invention is based on this, is provided with one drive circuit 70 between the hearth electrode 10 and top electrode 60, does not work in QLED
When, the reverse drive signals of charge elimination that makes to be limited by the driving circuit 70 output and/or assemble, the reversed drive
The waveform of dynamic signal is oblique wave, the elimination for the charge for being limited and/or being assembled by reverse drive signals acceleration, thus into one
Step achievees the purpose that increase QLED device lifetime.
When it is implemented, the waveform of the reverse drive signals is oblique wave in the present invention, forward driving signal can be to appoint
It anticipates the voltage or electric current of waveform, while the reverse drive signals can be continuous signal, the reverse drive signals can be with
It is backward voltage, reverse current or the backward voltage and reverse current being alternately present, the present invention provides multiple based on oblique as a result,
The embodiment of the QLED driving method of wave.
Referring to Fig. 2, in the first embodiment of the QLED driving method provided by the invention based on oblique wave, it is described reversed
Driving signal is backward voltage, after applying a backward voltage to QLED device, is in QLED under certain reversed electric field,
Under reversed electric field, the charge for being gathered in interface accessory is driven to outside QLED device by electric field, and the backward voltage of oblique wave passes through adjusting
The intensity of reversed electric field changes the potential barrier of defect potential well, makes the charge being limited in potential well be more likely to escape, to reduce limitation
The density of charge further promotes the service life of QLED device.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, guarantee in QLED device, PN junction will not lose
Diode characteristic, the reverse drive signals and forward driving signal form a drive cycle, the time of the backward voltage
The percentage r for accounting for the period is 1%-99%, and the frequency f of backward voltage is not less than 60HZ, the amplitude Vre of the backward voltage is-
0.1V ~ -10V, when it is implemented, suitable percentage, frequency and amplitude that can according to the actual situation in range of choice, to reach
Optimal promotion effect.
Please continue to refer to Fig. 2 and Fig. 3, in a specific embodiment, the frequency of the backward voltage is that f is 60Hz,
The percentage r that the time of backward voltage accounts for the period is 50%, and the amplitude Vre of backward voltage is -3V, as shown in figure 3, using reversed
The actual life attenuation curve of the QLED of voltage driving is longer than the life time decay curve of not normal driving, and attenuation degree obviously subtracts
It is slow.
Referring to Fig. 4, in the second embodiment of the QLED driving method provided by the invention based on oblique wave, it is described reversed
Driving signal is reverse current, by applying reverse current, injects certain electronics to the hole side of QLED, injects to electronics side
Certain hole reduces the density of limitation charge, further to neutralize the carrier for the anti-type being limited in QLED device
Promote the service life of QLED device.
When it is implemented, the reverse current is less than the breakdown current of QLED, guarantee the normal use of QLED, it is described reversed
Driving signal and forward driving signal form a drive cycle, and the percentage r that the time of the reverse current accounts for the period is 1%-
99%, the frequency f of the reverse current are not less than 60HZ, and the amplitude Ire of the reverse current is -0.0001Am/cm-2~-1Am/
cm-2, when it is implemented, suitable percentage, frequency and amplitude that can according to the actual situation in range of choice, with what is be optimal
Promote effect.
Referring to Fig. 5, in a specific embodiment, the frequency of the reverse current is that f is 60Hz, reverse current
The percentage r that time accounts for the period is 50%, and the amplitude Ire of reverse current is -0.001Am/cm-2, as shown in figure 5, using reversed electricity
The actual life attenuation curve for flowing the QLED of driving is longer than the life time decay curve of not normal driving, and attenuation degree obviously subtracts
It is slow.
The present invention also provides the QLED driving methods that a kind of backward voltage and reverse current are alternately present, specifically, institute
Stating reverse drive signals is the first oblique wave reverse drive signals and the second oblique wave reverse drive signals being alternately present, described first
Oblique wave reverse drive signals or the second oblique wave reverse drive signals are reverse current driving signal or backward voltage driving letter
One of which in number, followed by inputted after the first oblique wave reverse drive signals after first dramatic decrease slowly rise or under
The the second oblique wave reverse drive signals slowly risen or fallen after drop or first rapidly rising, when it is implemented, can be first
Oblique wave reverse drive signals are reverse current, and the second oblique wave reverse drive signals are backward voltage, or are also possible to first tiltedly
Wave reverse drive signals are backward voltage, and the second oblique wave reverse drive signals are that reverse current or the first oblique wave are driven in the reverse direction
Signal and the second reverse drive signals are reverse current or backward voltage, and the backward voltage of the backward voltage driving signal is small
In the breakdown voltage of QLED, the reverse current of the reverse current driving signal is less than the breakdown current of QLED, by using anti-
The driving method combined to electric current and backward voltage, equally can achieve the potential barrier for changing defect potential well, makes to be limited in potential well
Charge be more likely to escape, reduce limitation charge density, further promoted QLED device service life purpose.
Preferably, it can also continue to be followed by multiple oblique waves behind the second oblique wave reverse drive signals and be driven in the reverse direction letter
Number, the present invention is not construed as limiting the quantity of oblique wave reverse drive signals, and it is reversed can to choose according to actual needs the oblique wave that need to be arranged
The quantity of driving signal, and the waveform of multiple oblique wave reverse drive signals can drive for reverse current driving signal or backward voltage
One of which in dynamic signal.
Referring to Fig. 6, in the 3rd embodiment of the QLED driving method provided by the invention based on oblique wave, described first
Reverse drive signals are reverse current, and second reverse drive signals are backward voltage, tight after the first reverse drive signals
And then the second oblique wave reverse drive signals slowly risen after first dramatic decrease, due to above to backward voltage and reverse current
Driving principle be described in detail, details are not described herein.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, the reverse current is less than the breakdown of QLED
Electric current, the percentage that the time of the backward voltage accounts for the period is rV, and the percentage that the time of the reverse current accounts for the period is
RI, the percentage rV+rI that the sum of the backward voltage and the time of reverse current account for the period is 1%-99%, and the frequency f of driving is not
Less than 60HZ, the amplitude Vre of the backward voltage is -0.1V ~ -10V, and the amplitude Ire of the reverse current is -0.0001Am/
cm-2~-1Am/cm-2。
Referring to Fig. 7, in a specific embodiment, the frequency of driving is that f is 80Hz, and the time of reverse current accounts for week
The percentage rI of phase is 50%, and the amplitude Ire of reverse current is -0.001Am/cm-2, the time of backward voltage accounts for the percentage in period
It is 40% than rV, the amplitude of backward voltage is -3V, as shown in fig. 7, using the actual life attenuation curve for the QLED being driven in the reverse direction
It is longer than the life time decay curve of not normal driving, attenuation degree obviously slows down.
In QLED driving method provided by the invention based on oblique wave, vacant drive is also provided in a drive cycle
Dynamic signal, immediately to QLED after driving the forward driving signal of QLED device work or after vacant driving signal
Device emits the reverse drive signals.
Referring to Fig. 8, in the fourth embodiment of the QLED driving method provided by the invention based on oblique wave, it is described reversed
Driving signal is backward voltage, and for the cycle memory that is driven in the reverse direction in vacant driving signal, the reverse drive signals can be tight
And then forward driving signal or followed by vacant driving signal, driving principle is as in first embodiment, herein not
It repeats again.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, the reverse drive signals, forward driving letter
Number and vacant driving signal form a drive cycle, the time of the followed by backward voltage of forward driving signal accounts for the hundred of period
Divide than being ra, the percentage that the time of the backward voltage of followed by vacant driving signal accounts for the period is rb, vacant driving signal
The percentage that time accounts for the period is r0, and the percentage ra+rb that the time of reverse drive signals accounts for the period is 1%-99%, described reversed
The frequency f of voltage is not less than 60HZ, and the amplitude Vre of the backward voltage is -0.1V ~ -10V, when it is implemented, can be according to reality
Suitable percentage, frequency and amplitude in situation range of choice, with the promotion effect being optimal.
Please continue to refer to Fig. 9, in a specific embodiment, the frequency of the backward voltage is that f is 100Hz, is closely followed
The backward voltage of forward driving signal time account for the period percentage ra be 10%, followed by vacant driving signal it is reversed
The percentage rb that the time of voltage accounts for the period is 20%, and the percentage r0 that the time of vacant driving signal accounts for the period is 15%, reversely
The amplitude Vre of voltage is -3V, as shown in figure 9, being longer than using the actual life attenuation curve of the QLED of backward voltage driving is not had
The life time decay curve of normal driving, attenuation degree obviously slow down.
In conclusion the QLED driving method provided by the invention based on oblique wave, by the reverse current for adding oblique wave type
Or backward voltage, the potential barrier of QLED defect potential well is changed, the charge eliminating limitation and/or being gathered in potential well reduces limitation
The density of charge, to further achieve the purpose that increase QLED device lifetime.
It, can according to the technique and scheme of the present invention and its hair it is understood that for those of ordinary skills
Bright design is subject to equivalent substitution or change, and all these changes or replacement all should belong to the guarantor of appended claims of the invention
Protect range.
Claims (10)
1. a kind of QLED driving method based on oblique wave, the QLED include the hearth electrode being arranged from bottom to top, hole injection layer,
Hole transmission layer, quantum dot light emitting layer, electron transfer layer and top electrode, which is characterized in that in the hearth electrode and top electrode
Between be provided with one drive circuit, when QLED does not work, reverse drive signals are exported by the driving circuit, it is described reversed
The waveform of driving signal is oblique wave.
2. the QLED driving method according to claim 1 based on oblique wave, which is characterized in that forward driving signal is any
The voltage or electric current of waveform.
3. the QLED driving method according to claim 2 based on oblique wave, which is characterized in that the reverse drive signals are
Backward voltage, the backward voltage are less than the breakdown voltage of QLED.
4. the QLED driving method according to claim 3 based on oblique wave, which is characterized in that the time of the backward voltage
The percentage for accounting for the period is 1%-99%, and the frequency of the backward voltage is not less than 60HZ, and the amplitude of the backward voltage is -0.1V
~-10V。
5. the QLED driving method according to claim 2 based on oblique wave, which is characterized in that the reverse drive signals are
Reverse current, the reverse current are less than the breakdown current of QLED.
6. the QLED driving method according to claim 5 based on oblique wave, which is characterized in that the time of the reverse current
The percentage for accounting for the period is 1%-99%, and the frequency of the reverse current is not less than 60HZ, the amplitude of the reverse current is-
0.0001Am/cm-2~-1Am/cm-2。
7. the QLED driving method according to claim 2 based on oblique wave, which is characterized in that the reverse drive signals are
The the first oblique wave reverse drive signals and the second oblique wave reverse drive signals being alternately present, the first oblique wave reverse drive signals
Or the second oblique wave reverse drive signals are the one of which in reverse current driving signal or backward voltage driving signal.
8. the QLED driving method according to claim 7 based on oblique wave, which is characterized in that first oblique wave reversely drives
Second for slowly rising or falling or slowly being risen or fallen after first rapidly rising after followed by first dramatic decrease after dynamic signal
Oblique wave reverse drive signals.
9. the QLED driving method according to claim 8 based on oblique wave, which is characterized in that the backward voltage driving letter
Number backward voltage be less than the breakdown voltage of QLED, the reverse current of the reverse current driving signal is less than the breakdown potential of QLED
Stream.
10. the QLED driving method according to claim 8 based on oblique wave, which is characterized in that the backward voltage and anti-
The percentage for accounting for the period to the sum of the time of electric current is 1%-99%, and the frequency of the reverse drive signals is not less than 60HZ, described
The amplitude of backward voltage is -0.1V ~ -10V, and the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2。
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| CN1828707A (en) * | 2005-03-03 | 2006-09-06 | 株式会社日立显示器 | Method of driving organic el device and display device |
| TW201318471A (en) * | 2011-09-21 | 2013-05-01 | Gen Electric | Organic electroluminescent device with space charge/voltage instability stabilization drive |
| CN203722853U (en) * | 2014-01-24 | 2014-07-16 | 南京第壹有机光电有限公司 | Driving circuit for OLED illuminating device |
| CN104362258A (en) * | 2014-11-07 | 2015-02-18 | 北京维信诺科技有限公司 | Organic light-emitting device with long service life |
-
2017
- 2017-05-23 CN CN201710370278.1A patent/CN108934098B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1828707A (en) * | 2005-03-03 | 2006-09-06 | 株式会社日立显示器 | Method of driving organic el device and display device |
| TW201318471A (en) * | 2011-09-21 | 2013-05-01 | Gen Electric | Organic electroluminescent device with space charge/voltage instability stabilization drive |
| CN203722853U (en) * | 2014-01-24 | 2014-07-16 | 南京第壹有机光电有限公司 | Driving circuit for OLED illuminating device |
| CN104362258A (en) * | 2014-11-07 | 2015-02-18 | 北京维信诺科技有限公司 | Organic light-emitting device with long service life |
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