CN108962127A - A kind of QLED device and its reverse drive mode - Google Patents
A kind of QLED device and its reverse drive mode Download PDFInfo
- Publication number
- CN108962127A CN108962127A CN201710368558.9A CN201710368558A CN108962127A CN 108962127 A CN108962127 A CN 108962127A CN 201710368558 A CN201710368558 A CN 201710368558A CN 108962127 A CN108962127 A CN 108962127A
- Authority
- CN
- China
- Prior art keywords
- reverse
- signal
- qled device
- reverse drive
- drive mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
Abstract
The invention discloses a kind of QLED device and its reverse drive modes, wherein, the reverse drive mode of the QLED device is in each drive cycle, when QLED device does not work, emit at least one for eliminating the reverse drive signals of the charge in potential well to the QLED device, by when QLED device does not work, it is transmited to it a reverse drive signals, change the potential barrier of defect potential well, to accelerate the elimination of limitation and the charge being gathered in potential well, to achieve the purpose that extend QLED device lifetime.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of QLED device and its reverse drive mode.
Background technique
Light emitting diode with quantum dots (QLED) is the next-generation display skill with high display performance and typographical display adaptability
Art, however the service life of QLED is always to restrict its widely applied bottleneck.In addition to the optimization to material, device, preparation process with
Outside, driving QLED is also that one kind can slow down QLED light intensity attenuation, enhances the method for QLED service life.QLED is to generally require
Hole transmission layer, quantum dot light emitting layer, electron transfer layer are constituted.Since every layer of energy level is different, there are energy level difference,
In the work of QLED, charge can be gathered in the interface of energy level difference, and the interface especially contacted with quantum dot light emitting layer can be very
The characteristics of luminescence of big shadow quantum dot.To lower luminous intensity.On the other hand, in every kind of material internal, such as quantum dot
The reason of all there is a large amount of defect between transport layer material molecule in surface, these defects are also limiting carrier.With QLED
Working time increase, more and more charge-limiteds are into defect, as the center that photon is quenched, greatly lower the light that shines
By force.Therefore the problem of charge how eliminating limitation and being gathered in potential well, raising QLED device lifetime, is also urgently to be resolved.
Thus the prior art could be improved and improve.
Summary of the invention
Place in view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of QLED device and its reversed drives
Dynamic model formula, by when QLED device does not work, being transmited to it at least one for eliminating being driven in the reverse direction for the charge in potential well
Signal, to accelerate the elimination of limitation and the charge being gathered in potential well, to achieve the purpose that extend QLED device lifetime.
In order to achieve the above object, this invention takes following technical schemes:
A kind of reverse drive mode of QLED device, wherein in each drive cycle, when QLED device does not work, to institute
It states QLED device and emits at least one reverse drive signals.
In the reverse drive mode of the QLED device, vacant driving signal is additionally provided in the drive cycle,
Emit immediately to QLED device after driving the forward driving signal of QLED device work or after vacant driving signal
The reverse drive signals.
In the reverse drive mode of the QLED device, the forward driving signal be random waveform voltage signal or
Current signal.
In the reverse drive mode of the QLED device, the waveforms of the reverse drive signals is square wave, triangular wave, tiltedly
At least one of wave, sine wave.
In the reverse drive mode of the QLED device, when in the reverse drive signals include reverse voltage signal
When, the maximum value of the reverse voltage signal is less than the breakdown voltage of QLED device.
In the reverse drive mode of the QLED device, when in the reverse drive signals include reverse current signal
When, the maximum value of the reverse current signal is less than the breakdown current of QLED device.
In the reverse drive mode of the QLED device, in each drive cycle, all reverse drive signals continue
The percentage of time that the sum of time accounts for each drive cycle is 1% ~ 99%.
In the reverse drive mode of the QLED device, when in the reverse drive signals include reverse current signal
When, the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2;When including reversed electricity in the reverse drive signals
When pressing signal, the amplitude of the backward voltage is -0.1V ~ -10V.
In the reverse drive mode of the QLED device, the frequency of the reverse drive signals is greater than 60Hz.
A kind of QLED device includes at least hearth electrode, luminescent layer and the top electrode of successively lamination setting, the hearth electrode
One drive circuit is connected between top electrode, the operating mode of the driving circuit is reverse drive mode as described above.
Compared to the prior art, in QLED device and its reverse drive mode provided by the invention, the QLED device
Reverse drive mode is, when QLED device does not work, to emit at least one to the QLED device in each drive cycle
For eliminating the reverse drive signals of the charge in potential well, by when QLED device does not work, being transmited to it a reversed drive
Dynamic signal, changes the potential barrier of defect potential well, to accelerate the elimination of limitation and the charge being gathered in potential well, to reach extension
The purpose of QLED device lifetime.
Detailed description of the invention
Fig. 1 is the drive signal waveform figure in the embodiment of the present invention 1.
Fig. 2 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 1 with normal driving.
Fig. 3 is the drive signal waveform figure in the embodiment of the present invention 2.
Fig. 4 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 2 with normal driving.
Fig. 5 is the drive signal waveform figure in the embodiment of the present invention 3.
Fig. 6 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 3 with normal driving.
Fig. 7 is the drive signal waveform figure in the embodiment of the present invention 4.
Fig. 8 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 4 with normal driving.
Fig. 9 is the drive signal waveform figure in the embodiment of the present invention 5.
Figure 10 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 5 with normal driving.
Figure 11 is the drive signal waveform figure in the embodiment of the present invention 6.
Figure 12 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 6 with normal driving.
Figure 13 is the drive signal waveform figure in the embodiment of the present invention 7.
Figure 14 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 7 with normal driving.
Figure 15 is the drive signal waveform figure in the embodiment of the present invention 8.
Figure 16 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 8 with normal driving.
Figure 17 is the drive signal waveform figure in the embodiment of the present invention 9.
Figure 18 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 9 with normal driving.
Figure 19 is the drive signal waveform figure in the embodiment of the present invention 10.
Figure 20 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 10 with normal driving.
Figure 21 is the drive signal waveform figure in the embodiment of the present invention 11.
Figure 22 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 11 with normal driving.
Figure 23 is the drive signal waveform figure in the embodiment of the present invention 12.
Figure 24 is the life time decay curve comparison figure being driven in the reverse direction in the embodiment of the present invention 12 with normal driving.
Figure 25 is the structural schematic diagram of QLED device provided by the invention.
Specific embodiment
In view of the disadvantages of QLED device lifetime is short in the prior art, the purpose of the present invention is to provide a kind of QLED device and
Its reverse drive mode, by when QLED device does not work, being transmited to it one for eliminating the reversed of the charge in potential well
Driving signal, to accelerate the elimination of limitation and the charge being gathered in potential well, to achieve the purpose that extend QLED device lifetime.
To make the purpose of the present invention, technical solution and effect clearer, clear and definite, right as follows in conjunction with drawings and embodiments
The present invention is further described.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to
Limit the present invention.
The reverse drive mode of QLED device provided by the invention, mainly by each drive cycle, when QLED device
When part does not work, emit at least one for eliminating the reverse drive signals of the charge in potential well, to reach to the QLED device
To the purpose of elimination limitation and the charge being gathered in potential well is accelerated, to extend the service life of QLED device, wherein described reversed
Driving signal is at least one of reverse voltage signal and reverse current signal, i.e., the described reverse drive signals can be reversed
Voltage signal or reverse current signal or simultaneously include reverse voltage signal and reverse current signal, such as backward voltage
With the alternating signal of reverse current.
When using reverse voltage signal, QLED device can be made to be in certain reversed electric field, under reversed electric field, aggregation
Electric field can be reversed in the charge of interface cathode to be driven to outside QLED device, by adjusting the intensity of reversed electric field, change defect
The potential barrier of potential well makes the charge being limited in potential well be more likely to escape, to reduce the density of limitation charge, when the reversed drive
It include reverse voltage signal in dynamic signal, then when adjusting reversed electric field intensity, the maximum value of the reverse voltage signal needs small
In the breakdown voltage of QLED device, to guarantee the normal use of device.
When using reverse current signal, certain electronics can be injected to the hole side of QLED device by reverse current,
Certain hole is injected to electronics side, to neutralize the anti-type of carrier of limitation in the devices, has equally reached reduction limit
The purpose of charge density processed equally when including reverse current signal in the reverse drive signals, is then adjusting the reversed electricity
When flowing signal, the maximum value of the reverse current signal is less than the breakdown current of QLED device, to avoid due to reverse current mistake
PN junction is caused to lose diode characteristic greatly.Therefore, no matter using reverse voltage signal or reverse current signal or reversed
The alternating signal of voltage and reverse current is able to achieve limitation and the charge being gathered in potential well is eliminated, and improves device lifetime, into
One step, which, which can apply, is embedded into the active drive of QLED or the circuit of passive matrix, i.e. active drive
The reverse drive mode can be used in panel and passive matrix panel, to realize the whole use for improving QLED and showing equipment
Service life.
Further, it is additionally provided with a vacant driving signal in the drive cycle, i.e., is exported at this time without driving signal,
QLED device does not work equally at this time, therefore can be after driving the forward driving signal of QLED device work immediately to QLED
Device emits the reverse drive signals, or can also be after the vacant signal immediately to described in the transmitting of QLED device
Reverse drive signals, specifically can be according to carrying out flexible choice the characteristics of device.In the present invention, the forward driving signal can be to appoint
The voltage signal or current signal of meaning waveform specifically can require be selected according to practical driving.
Specifically, the waveform of heretofore described reverse drive signals be square wave, triangular wave, oblique wave, in sine wave extremely
Few one kind, i.e., interior at least one reverse drive signals emitted to QLED device of each drive cycle can be the anti-of single waveform
The combination of different wave can also be used when the reverse drive signals quantity in each drive cycle is greater than 1 to driving signal,
Such as emit a square wave reverse drive signals and a triangular wave reverse drive signals to QLED device in each drive cycle,
It specifically can require to be adjusted according to practical devices, to reach optimal device effect.
Preferably, in each drive cycle, the sum of the duration of all reverse drive signals accounts for each drive cycle
Percentage of time is 1% ~ 99%, and when being provided with vacant driving signal, the duration of the vacant driving signal accounts for each drive
The percentage of time in dynamic period is 1% ~ 99%, in certain each drive cycle the duration of all reverse drive signals with it is vacant
The sum of duration of driving signal is less than 99%.
When it is implemented, the time of the reverse voltage signal and reverse current signal, frequency and amplitude can carry out
Adjustment, to reach optimal effect, extends device lifetime to greatest extent, and the frequency of the specific reverse voltage signal is greater than
60Hz, time range are 0.1ms ~ 999ms, and amplitude range is -0.1V ~ -10V, and the frequency of the reverse current signal is greater than
60Hz, time range are 0.1ms ~ 999ms, and amplitude range is -0.0001Am/cm-2To -1Am/cm-2.It can be according to the actual situation
Suitable time, frequency and the amplitude of selection, with the promotion effect being optimal.
Specific embodiment is lifted below the reverse drive mode of QLED device provided by the invention is further described.
Embodiment 1
Please refer to Fig. 1 and Fig. 2, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal, instead
It is reverse voltage signal to driving signal, waveform is square wave, the reverse voltage signal and then forward driving signal exists
Emit a reverse voltage signal to the QLED device immediately after forward driving signal, the reversed electricity in a drive cycle
Pressing percentage of time shared by signal is r, and the amplitude of backward voltage is Vre, and the frequency f of reverse voltage signal is greater than 60Hz,
Middle r is between 1% to 99%, and Vre is between -0.1V to -10V, in a practical driving, f=60Hz, r=50%, and Vre=- 3V,
Life time decay curve comparison figure is obtained as shown in Fig. 2, actual life time decay curve, which is longer than, does not have the case where reverse biased.
Embodiment 2
Please refer to Fig. 3 and Fig. 4, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal, instead
It is reverse voltage signal to driving signal, waveform is square wave, and emits two reverse voltage signals in a drive cycle,
Shared percentage of time is respectively ra and rb, meanwhile, it is provided with vacant driving r0 in the present embodiment, that is, exists and do not drive
Time, reverse voltage signal can and then forward driving signal or and then vacant driving signal at this time.Wherein backward voltage
Amplitude is Vre, and the frequency f of reverse voltage signal is greater than 60Hz, wherein ra+rb between 1% to 99%, r0 between 1% to 99%,
Vre is in -0.1V between -10V, and in a practical driving, f=100Hz, ra=0%, rb=20%, r0=15%, Vre=- 3V obtained
To life time decay curve comparison figure as shown in figure 4, actual life time decay curve, which is longer than, does not have the case where reverse biased.
Embodiment 3
Please refer to Fig. 5 and Fig. 6, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal, instead
It is reverse current signal to driving signal, waveform is square wave, the reverse current signal and then forward driving signal exists
Emit a reverse current signal to the QLED device immediately after forward driving signal, the reversed electricity in a drive cycle
Flowing percentage of time shared by signal is r, and the amplitude of reverse current is Ire, and the frequency f of reverse current signal is greater than 60Hz,
Middle r is between 1% to 99%, and Ire is in -0.0001Am/cm-2To -1Am/cm-2Between, in a practical driving, f=80Hz, r=
40%, Ire=- 0.001Am/cm-2, life time decay curve comparison figure is obtained as shown in fig. 6, actual life time decay curve is longer than not
There is the case where reverse biased.
Embodiment 4
Please refer to Fig. 7 and Fig. 8, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal, instead
It is reverse current signal to driving signal, waveform is square wave, and emits two reverse current signals in a drive cycle,
Shared percentage of time is respectively ra and rb, meanwhile, it is provided with vacant driving r0 in the present embodiment, that is, exists and do not drive
Time, reverse current signal can and then forward driving signal or and then vacant driving signal at this time.Wherein reverse current
Amplitude is Ire, and the frequency f of reverse current signal is greater than 60Hz, wherein ra+rb between 1% to 99%, r0 between 1% to 99%,
Ire is in -0.0001Am/cm-2To -1Am/cm-2Between, in a practical driving, f=120Hz, ra=30%, the r0 of rb=0%=
15%, Ire=- 0.002Am/cm-2, life time decay curve comparison figure is obtained as shown in figure 8, actual life time decay curve is longer than not
There is the case where reverse biased.
Embodiment 5
Please referring to Fig. 9 and Figure 10, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal,
Reverse drive signals are the alternating signal of backward voltage and reverse current, wherein the waveform side of being of backward voltage and reverse current
Wave, the backward voltage and then forward driving signal are sent out to the QLED device immediately after forward driving signal
The alternating signal for penetrating a backward voltage and reverse current, the percentage of time shared by reverse current signal in a drive cycle
For rI, the amplitude of reverse current is Ire, and percentage of time shared by reverse voltage signal is rV in a drive cycle, instead
It is Vre to the amplitude of voltage, the frequency f of reverse drive signals is greater than 60Hz, and wherein rI and rV is between 1% to 99%, rV+rI
< 99%, Ire are in -0.0001Am/cm-2To -1Am/cm-2Between, Vre is between -0.1V to -10V, in a practical driving,
F=80Hz, rI=40%, Ire=- 0.001Am/cm-2, rV=50%, Vre=- 3V obtain life time decay curve comparison figure such as Figure 10 institute
Show, actual life time decay curve, which is longer than, does not have the case where reverse biased.
Embodiment 6
Please referring to Figure 11 and Figure 12, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal,
Reverse drive signals are the alternating signal of backward voltage and reverse current, wherein the waveform side of being of backward voltage and reverse current
Wave, meanwhile, it is provided with vacant driving r0 in the present embodiment, that is, there is the time not driven, reverse drive signals can be tight at this time
Then forward driving signal or and then vacant driving signal.The time hundred shared by reverse current signal in a drive cycle
Divide than being rI, the amplitude of reverse current is Ire, and percentage of time shared by reverse voltage signal is in a drive cycle
RV, the amplitude of backward voltage are Vre, and the frequency f of reverse drive signals is greater than 60Hz, wherein rI, rV and r0 1% to 99% it
Between, rV+rI+r0 < 99%, Ire is in -0.0001Am/cm-2To -1Am/cm-2Between, Vre is between -0.1V to -10V, at one
In practical driving, f=120Hz, rV=10%, rI=30%, r0=15%, Ire=- 0.002Am/cm-2Vre=- 2V obtains life time decay
Curve comparison figure is as shown in figure 12, and actual life time decay curve, which is longer than, does not have the case where reverse biased.
Embodiment 7
Please referring to Figure 13 and Figure 14, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal,
Reverse drive signals are the alternating signal of backward voltage and reverse current, and wherein the waveform of reverse current is oblique wave, backward voltage
Waveform be triangular wave, meanwhile, be provided with vacant driving r0 in the present embodiment, that is, there is the time not driven, at this time reversely
Driving signal can and then forward driving signal or and then vacant driving signal.The reverse current signal in a drive cycle
Shared percentage of time is rI, and the amplitude of reverse current is Ire, when in a drive cycle shared by reverse voltage signal
Between percentage be rV, the amplitude of backward voltage is Vre, and the frequency f of reverse drive signals is greater than 60Hz, and wherein rI, rV and r0 are equal
Between 1% to 99%, rV+rI+r0 < 99%, Ire is in -0.0001Am/cm-2To -1Am/cm-2Between, Vre arrives -10V in -0.1V
Between, in a practical driving, f=120Hz, rV=10%, rI=30%, r0=15%, Ire=- 0.002Am/cm-2Vre=- 2V,
It is as shown in figure 14 to obtain life time decay curve comparison figure, actual life time decay curve, which is longer than, does not have the case where reverse biased.
Embodiment 8
Please referring to Figure 15 and Figure 16, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal,
Reverse drive signals are reverse voltage signal, and waveform is triangular wave, i.e. voltage changes with time as triangular form, are being risen
Stage, over time, backward voltage are bigger, conversely, the decline stage is over time, backward voltage is smaller.It is dynamic
The voltage system of state can effectively reduce the carrying of QLED device, and device is made to have the reaction of capacitor and inductor of very little.This implementation
In example, the waveform of the triangular wave can be equilateral triangle or non-equilateral triangle, and the reverse voltage signal is and then just
To driving signal, i.e., emit a reverse voltage signal to the QLED device immediately after forward driving signal, at one
Percentage of time shared by reverse voltage signal is r in drive cycle, and the amplitude of backward voltage is Vre, reverse voltage signal
Frequency f is greater than 60Hz, and wherein r is between 1% to 99%, and Vre is between -0.1V to -10V, in a practical driving, f=
60Hz, r=50%, Vre=- 3V obtain that life time decay curve comparison figure is as shown in figure 16, and actual life time decay curve is longer than not
There is the case where reverse biased.
Embodiment 9
Please referring to Figure 17 and Figure 18, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal,
Reverse drive signals are reverse voltage signal, and waveform is triangular wave and loads on a negative pressure Vre, define triangular wave
Peak value is Vtr, and the waveform of the same triangular wave can be equilateral triangle or non-equilateral triangle, and the reverse voltage signal
And then forward driving signal emits backward voltage letter to the QLED device immediately after forward driving signal
Number, percentage of time shared by reverse voltage signal is r in a drive cycle, and the frequency f of reverse voltage signal is greater than
60Hz, wherein r is between 1% to 99%, and Vre+Vtr is between -0.1V to -10V, in a practical driving, f=60Hz, r=
50%, Vre=- 1.5V, Vtr=- 1.5V, obtain that life time decay curve comparison figure is as shown in figure 18, and actual life time decay curve is long
In there is no the case where reverse biased.
Embodiment 10
Please referring to Figure 19 and Figure 20, in the present embodiment, the forward driving signal is square wave voltage signal or square wave current signal,
Reverse drive signals are reverse voltage signal, and waveform is oblique wave and loads on a negative pressure Vre, define the numerical value of oblique wave
Variation is Vtr, and the value of Vtr can just be born, i.e., the inclined direction of oblique wave can be increasing (i.e. for backward voltage as time goes by
Vtr is positive), or backward voltage is smaller and smaller (i.e. Vtr is negative) as time goes by, and the reverse voltage signal is and then
Forward driving signal emits a reverse voltage signal to the QLED device immediately after forward driving signal, one
Percentage of time shared by reverse voltage signal is r in a drive cycle, and the frequency f of reverse voltage signal is greater than 60Hz, wherein r
Between 1% to 99%, Vre+Vtr is between -0.1V to -10V, in a practical driving, f=60Hz, r=50%, and Vre=- 3V,
Vtr=- 1.5V, obtains that life time decay curve comparison figure is as shown in figure 20, and actual life time decay curve is longer than no reverse biased
The case where.
Embodiment 11
Please referring to Figure 21 and Figure 22, in the present embodiment, the forward driving signal is triangular voltages signal or delta current signal,
Reverse drive signals are reverse voltage signal, and its waveform is similarly triangular wave, i.e. driving signal is triangular wave triangle simultaneously
Wave is there are reverse bias, and in the present embodiment, the waveform of the triangular wave can be equilateral triangle or non-equilateral triangle, and described
Reverse voltage signal and then forward driving signal, i.e., immediately to QLED device transmitting one after forward driving signal
Reverse voltage signal, percentage of time shared by reverse voltage signal is r in a drive cycle, and the amplitude of backward voltage is
The frequency f of Vre, reverse voltage signal are greater than 60Hz, and wherein r is between 1% to 99%, and Vre is between -0.1V to -10V, one
In a practical driving, f=60Hz, r=50%, Vre=- 3V, it is as shown in figure 22 to obtain life time decay curve comparison figure, the actual service life
Attenuation curve, which is longer than, does not have the case where reverse biased.
Embodiment 12
Please referring to Figure 23 and Figure 24, in the present embodiment, the forward driving signal is sine voltage signal or sinusoidal current signal,
That is voltage or electric current changes with time in sinus wave patters, if the cut-in voltage of device is V0, when being greater than V0 in sine wave
Proper device operation is waited, device does not work when less than V0, and reverse drive signals are reverse voltage signal, and its waveform is similarly
Sine wave, i.e. driving signal are that there are reverse bias, i.e. a part of sine wave to be less than 0V, device for the sine wave simultaneously for sine wave
Under reversed electric field effect, in the present embodiment, the reverse voltage signal and then forward driving signal, i.e., in forward driving
Emit a reverse voltage signal, the reverse voltage signal institute in a drive cycle to the QLED device immediately after signal
The percentage of time accounted for is r, and the amplitude of backward voltage is Vre, and the frequency f of reverse voltage signal is greater than 60Hz, and wherein r is arrived 1%
Between 99%, Vre is in -0.1V between -10V, and in a practical driving, f=60Hz, r=50%, Vre=- 3V, obtaining the service life declines
It is as shown in figure 24 to subtract curve comparison figure, actual life time decay curve, which is longer than, does not have the case where reverse biased.
The reverse drive mode of QLED device based on above-mentioned offer, the present invention correspondingly provide a kind of QLED device, such as
Shown in Figure 25, hearth electrode 10, luminescent layer 20 and the top electrode 30 of successively lamination setting, the hearth electrode 10 and top are included at least
One drive circuit 40 is connected between electrode 30, the operating mode of the driving circuit 40 is reverse drive mode as described above,
Since the reverse drive mode being described in detail above, it is not described further herein.
Specifically, the QLED device, which goes out light according to it, can reversely be divided into bottom emitting device or top emitting device, the present invention
To this and it is not construed as limiting, equally, the present invention is positive to QLED device to set device or invert device and also be not construed as limiting, for example, in order to
Device efficiency is improved, increases hole injection layer and/or hole transmission layer between hearth electrode 10 and luminescent layer 20, in luminescent layer 20
Increase electron transfer layer and/or electron injecting layer between top electrode 30, positive bottom set ballistic device is prepared;Or in bottom electricity
Increase electron injecting layer and/or electron transfer layer between pole 10 and luminescent layer 20, increases between luminescent layer 20 and top electrode 30
Hole transmission layer and/or hole injection layer are prepared and invert bottom emitting device, be specifically dependent upon device fabrication process.
In conclusion in QLED device provided by the invention and its reverse drive mode, the reversed drive of the QLED device
Dynamic model formula is, when QLED device does not work, to emit at least one for disappearing to the QLED device in each drive cycle
Except the reverse drive signals of the charge in potential well, by being transmited to it a reverse drive signals when QLED device does not work,
Change the potential barrier of defect potential well, to accelerate the elimination of limitation and the charge being gathered in potential well, extends QLED device to reach
The purpose in service life.
It, can according to the technique and scheme of the present invention and its hair it is understood that for those of ordinary skills
Bright design is subject to equivalent substitution or change, and all these changes or replacement all should belong to the guarantor of appended claims of the invention
Protect range.
Claims (10)
1. a kind of reverse drive mode of QLED device, which is characterized in that in each drive cycle, when QLED device does not work
When, emit at least one reverse drive signals to the QLED device.
2. the reverse drive mode of QLED device according to claim 1, which is characterized in that also set in the drive cycle
It is equipped with vacant driving signal, after driving the forward driving signal of QLED device work or after vacant driving signal
Emit the reverse drive signals to QLED device immediately.
3. the reverse drive mode of QLED device according to claim 2, which is characterized in that the forward driving signal is
The voltage signal or current signal of random waveform.
4. the reverse drive mode of QLED device according to claim 1 or 2, which is characterized in that described to be driven in the reverse direction letter
Number waveform be at least one of square wave, triangular wave, oblique wave, sine wave.
5. the reverse drive mode of QLED device according to claim 1 or 2, which is characterized in that be driven in the reverse direction when described
When including reverse voltage signal in signal, the maximum value of the reverse voltage signal is less than the breakdown voltage of QLED device.
6. the reverse drive mode of QLED device according to claim 1 or 2, which is characterized in that be driven in the reverse direction when described
When including reverse current signal in signal, the maximum value of the reverse current signal is less than the breakdown current of QLED device.
7. the reverse drive mode of QLED device according to claim 1, which is characterized in that in each drive cycle, institute
The percentage of time that the sum of the duration for having reverse drive signals accounts for each drive cycle is 1% ~ 99%.
8. the reverse drive mode of QLED device according to claim 1, which is characterized in that when the reverse drive signals
In when including reverse current signal, the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2;When the reversed drive
When including reverse voltage signal in dynamic signal, the amplitude of the backward voltage is -0.1V ~ -10V.
9. the reverse drive mode of QLED device according to claim 1, which is characterized in that the reverse drive signals
Frequency is greater than 60Hz.
10. a kind of QLED device includes at least hearth electrode, luminescent layer and the top electrode of successively lamination setting, the hearth electrode
One drive circuit is connected between top electrode, which is characterized in that the operating mode of the driving circuit is that claim 1-9 such as appoints
Reverse drive mode described in meaning one.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710368558.9A CN108962127A (en) | 2017-05-23 | 2017-05-23 | A kind of QLED device and its reverse drive mode |
PCT/CN2018/082650 WO2018214660A1 (en) | 2017-05-23 | 2018-04-11 | Quantum dot light emitting diode and reverse drive mode thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710368558.9A CN108962127A (en) | 2017-05-23 | 2017-05-23 | A kind of QLED device and its reverse drive mode |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108962127A true CN108962127A (en) | 2018-12-07 |
Family
ID=64395310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710368558.9A Pending CN108962127A (en) | 2017-05-23 | 2017-05-23 | A kind of QLED device and its reverse drive mode |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN108962127A (en) |
WO (1) | WO2018214660A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112331130A (en) * | 2019-07-31 | 2021-02-05 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
CN112397014A (en) * | 2019-07-31 | 2021-02-23 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1541502A (en) * | 2001-08-09 | 2004-10-27 | ������������ʽ���� | Organic electroluminescent display device and driving method thereof |
CN1828707A (en) * | 2005-03-03 | 2006-09-06 | 株式会社日立显示器 | Method of driving organic el device and display device |
US20080309234A1 (en) * | 2007-06-15 | 2008-12-18 | Samsung Electronics Co., Ltd. | Alternating current driving type quantum dot electroluminescent device |
CN103972416A (en) * | 2014-05-15 | 2014-08-06 | 华北电力大学 | Semiconductor quantum dot LED based on reverse structure and preparation method thereof |
CN106098956A (en) * | 2016-07-14 | 2016-11-09 | Tcl集团股份有限公司 | A kind of QLED and preparation method thereof |
CN106549111A (en) * | 2016-12-07 | 2017-03-29 | Tcl集团股份有限公司 | Exchange electrically driven (operated) light emitting diode with quantum dots, its preparation method and application |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102122490A (en) * | 2011-03-18 | 2011-07-13 | 华南理工大学 | AC (Alternating Current) drive circuit for active organic light emitting diode (OLED) display and method thereof |
KR102241715B1 (en) * | 2013-05-07 | 2021-04-20 | 삼성디스플레이 주식회사 | Organic light emitting display panel and organic light emitting display device having the same |
CN103427049B (en) * | 2013-08-21 | 2014-12-03 | 京东方科技集团股份有限公司 | Manufacturing method of quantum dot light-emitting component and quantum dot displaying device |
CN104217674B (en) * | 2014-05-29 | 2017-01-25 | 京东方科技集团股份有限公司 | Pixel unit drive circuit and method, pixel drive circuit and AMOLED (active matrix/organic light-emitting diode) display device |
CN105047138B (en) * | 2015-09-15 | 2018-01-05 | 深圳市华星光电技术有限公司 | A kind of drive system of display device and the drive circuit suitable for OLED |
-
2017
- 2017-05-23 CN CN201710368558.9A patent/CN108962127A/en active Pending
-
2018
- 2018-04-11 WO PCT/CN2018/082650 patent/WO2018214660A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1541502A (en) * | 2001-08-09 | 2004-10-27 | ������������ʽ���� | Organic electroluminescent display device and driving method thereof |
CN1828707A (en) * | 2005-03-03 | 2006-09-06 | 株式会社日立显示器 | Method of driving organic el device and display device |
US20080309234A1 (en) * | 2007-06-15 | 2008-12-18 | Samsung Electronics Co., Ltd. | Alternating current driving type quantum dot electroluminescent device |
CN103972416A (en) * | 2014-05-15 | 2014-08-06 | 华北电力大学 | Semiconductor quantum dot LED based on reverse structure and preparation method thereof |
CN106098956A (en) * | 2016-07-14 | 2016-11-09 | Tcl集团股份有限公司 | A kind of QLED and preparation method thereof |
CN106549111A (en) * | 2016-12-07 | 2017-03-29 | Tcl集团股份有限公司 | Exchange electrically driven (operated) light emitting diode with quantum dots, its preparation method and application |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112331130A (en) * | 2019-07-31 | 2021-02-05 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
CN112397014A (en) * | 2019-07-31 | 2021-02-23 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
Also Published As
Publication number | Publication date |
---|---|
WO2018214660A1 (en) | 2018-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111477164B (en) | Driving circuit of display | |
CN1828707A (en) | Method of driving organic el device and display device | |
CN1604165A (en) | Self light emitting type display device | |
CN1307729A (en) | Field emission display and method for operation | |
CN1912974A (en) | Light emitting display | |
CN103985354B (en) | A kind of array base palte and display floater | |
CN1831918A (en) | Active matrix type display device and driving method thereof | |
CN108962127A (en) | A kind of QLED device and its reverse drive mode | |
CN108932925A (en) | A kind of QLED driving method based on sine wave | |
CN1804970A (en) | Apparatus for deriving a plasma display panel | |
CN1702713A (en) | Electron emission display (EED) with decreased signal distortion and method of driving EED | |
CN108962129A (en) | A kind of QLED device and its backward voltage drive mode | |
CN1704996A (en) | Method of driving electron emission device with decreased signal delay | |
CN108934097A (en) | A kind of QLED driving method based on electromagnetic wave | |
CN108962133A (en) | A kind of QLED device and its reverse current drive mode | |
CN1419260A (en) | Field emission type electronic source and driving method thereof | |
CN108932926A (en) | A kind of QLED device and its reversed driven mode | |
CN108962131A (en) | A kind of QLED driving method based on triangular wave | |
JP2004272213A (en) | Image display device | |
CN108934098B (en) | QLED driving method based on oblique wave | |
EP3633659B1 (en) | Preset reverse drive method applied in video displaying process | |
CN108932928A (en) | A kind of driving method of passive type driving quantum dot display panel | |
CN108962128A (en) | A kind of QLED driving method based on square wave | |
CN112331130A (en) | Drive method and drive device of quantum dot light-emitting diode and display device | |
CN1615505A (en) | Passive addressed matrix display having a plurality of luminescent picture elements and preventing charging/decharging of non-selected picture elements |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |