CN108932925A - A kind of QLED driving method based on sine wave - Google Patents
A kind of QLED driving method based on sine wave Download PDFInfo
- Publication number
- CN108932925A CN108932925A CN201710369582.4A CN201710369582A CN108932925A CN 108932925 A CN108932925 A CN 108932925A CN 201710369582 A CN201710369582 A CN 201710369582A CN 108932925 A CN108932925 A CN 108932925A
- Authority
- CN
- China
- Prior art keywords
- qled
- sine wave
- reverse
- drive signals
- backward voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
Abstract
The invention discloses a kind of QLED driving method based on sine wave, one drive circuit is provided between the hearth electrode and top electrode, when QLED does not work, make the reverse drive signals limited and the charge of aggregation is eliminated by driving circuit output, the waveform of the reverse drive signals is sine wave.By adding the reverse current or backward voltage of sinusoidal waveform, the potential barrier of QLED defect potential well is changed, the charge eliminating limitation and being gathered in potential well reduces the density of limitation charge, to further achieve the purpose that increase QLED device lifetime.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of QLED driving method based on sine wave.
Background technique
Light emitting diode with quantum dots (QLED) receives wide in recent years as a kind of emerging high efficiency electroluminous device
General concern.The working principle and Organic Light Emitting Diode (OLED) of QLED is all external circuit by positive and negative two closely
A electrode injects electrons and holes into device respectively, and the carrier of injection is reached by carrier injection layer and transport layer to shine
Layer recombination luminescence.Unlike, in OLED, luminescent layer mainly uses organic molecule with a conjugated structure, although this kind of material
Material has the good characteristics of luminescence, but stability is not good enough.And in QLED, luminescent layer is taken on by inorganic-quantum-dot material,
Compared to conjugated organic molecule material, inorganic-quantum-dot has stronger chemical stability, therefore, the luminescent device prepared with it
With longer service life.In addition to this, the electroluminescent spectrum of QLED has narrower halfwidth, it is wanted in excitation purity
Better than OLED.There are above-mentioned excellent properties in view of QLED, market prospects are very considerable.
However, the service life of QLED is always to restrict its widely applied bottleneck, discovery is in addition to material, device in practical application
Part, preparation process optimization other than, driving QLED is also that one kind can slow down QLED light intensity attenuation, enhancing QLED service life
Method.QLED is to generally require hole transmission layer, quantum dot light emitting layer, electron transfer layer to constitute.Since every layer of energy level is different,
Therefore there are energy level differences, and in the work of QLED, charge can be gathered in the interface of energy level difference, especially and quantum dot light emitting layer
The interface of contact causes the characteristics of luminescence of quantum dot by extreme influence, further reduced luminous intensity.On the other hand, exist
All there is a large amount of defect between transport layer material molecule in every kind of material internal, such as the surface of quantum dot, these defects are also
The reason of limiting carrier.As the working time of QLED increases, more and more charge-limiteds can be greatly reduced into defect
Luminous intensity.
Thus the prior art could be improved and improve.
Summary of the invention
Place in view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of, and the QLED based on sine wave drives
Dynamic method, can reach the charge eliminating limitation and being gathered in potential well, reduce the density of limitation charge, increase QLED device lifetime
Purpose.
In order to achieve the above object, this invention takes following technical schemes：
A kind of QLED driving method based on sine wave, the QLED include the hearth electrode being arranged from bottom to top, hole injection layer,
Hole transmission layer, quantum dot light emitting layer, electron transfer layer and top electrode are provided with one between the hearth electrode and top electrode
Driving circuit exports reverse drive signals, the wave of the reverse drive signals by the driving circuit when QLED does not work
Shape is sine wave.
In the QLED driving method based on sine wave, the reverse drive signals followed by forward driving signal,
The reverse drive signals are continuous signal.
In the QLED driving method based on sine wave, there are vacant drivings to believe for the centre of the reverse drive signals
Number, the reverse drive signals followed by forward driving signal or vacant driving signal.
In the QLED driving method based on sine wave, the reverse drive signals are backward voltage, described reversed
Voltage is less than the breakdown voltage of QLED.
Specifically, the percentage that the time of the backward voltage accounts for the period is 1%-99%, the frequency of the backward voltage is big
In or equal to 60Hz, the amplitude of the backward voltage is -0.1V ~ -10V.
In the QLED driving method based on sine wave, the reverse drive signals are reverse current, described reversed
Electric current is less than the breakdown current of QLED.
Specifically, the percentage that the time of the reverse current accounts for the period is 1%-99%, the frequency of the reverse current is big
In or equal to 60Hz, the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2。
In the QLED driving method based on sine wave, the reverse drive signals are the backward voltage being alternately present
And reverse current, the backward voltage are less than the breakdown voltage of QLED, the reverse current is less than the breakdown current of QLED.
Specifically, the percentage that the sum of the backward voltage and the time of reverse current account for the period is 1%-99%, it is described anti-
It is greater than or equal to 60Hz to the frequency of voltage, the amplitude of the backward voltage is -0.1V ~ -10V, the frequency of the reverse current
More than or equal to 60Hz, the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2。
Compared to the prior art, the QLED driving method provided by the invention based on sine wave, on the hearth electrode and top
It is provided with one drive circuit between electrode, when QLED does not work, the electricity for limiting and assembling is made by driving circuit output
The reverse drive signals that lotus is eliminated, the waveform of the reverse drive signals are sine wave.By the reversed electricity for adding sinusoidal waveform
Stream or backward voltage change the potential barrier of QLED defect potential well, the charge eliminating limitation and being gathered in potential well, reduce limitation electricity
The density of lotus, to further achieve the purpose that increase QLED device lifetime.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of QLED device in QLED driving method provided by the invention.
Fig. 2 is the waveform diagram of driving signal in first embodiment of the invention.
Fig. 3 is in first embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Fig. 4 is the waveform diagram of driving signal in second embodiment of the invention.
Fig. 5 is in second embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Fig. 6 is the waveform diagram of driving signal in third embodiment of the invention.
Fig. 7 is in third embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Fig. 8 is the waveform diagram of driving signal in fourth embodiment of the invention.
Fig. 9 is in fourth embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Figure 10 is the waveform diagram of driving signal in fifth embodiment of the invention.
Figure 11 is in fifth embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Figure 12 is the waveform diagram of driving signal in sixth embodiment of the invention.
Figure 13 is in sixth embodiment of the invention, using the life time decay curve comparison of reverse drive signals and normal driving
Figure.
Specific embodiment
The present invention provides a kind of QLED driving method based on sine wave, the electricity that can be eliminated limitation and be gathered in potential well
Lotus, reduces the density of limitation charge, to further achieve the purpose that increase QLED device lifetime.
To make the purpose of the present invention, technical solution and effect clearer, clear and definite, right as follows in conjunction with drawings and embodiments
The present invention is further described.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to
Limit the present invention.
Referring to Fig. 1, it is in the QLED driving method provided by the invention based on sine wave, the structure of QLED device is shown
It is intended to, the QLED includes the hearth electrode 10, hole injection layer 20, hole transmission layer 30, quantum dot light emitting being arranged from bottom to top
Layer 40, electron transfer layer 50 and top electrode 60, since every layer of energy level is different, there are energy level differences, in the work of QLED
In, charge can be gathered in the interface of energy level difference, the interface especially contacted with quantum dot light emitting layer 40, on the other hand, every
Material internal, such as the surface of quantum dot are planted, all there is a large amount of defect between transport layer material molecule, these defects can also limit
Carrier processed, the present invention is based on this, is provided with one drive circuit 70 between the hearth electrode 10 and top electrode 60, stops in QLED
When only working, the reverse drive signals limited and/or the charge of aggregation is eliminated are made by the driving circuit 70 output, by this
Reverse drive signals accelerate the elimination of the charge of limitation and aggregation, to further achieve the purpose that increase QLED device lifetime.
When it is implemented, the waveform of the reverse drive signals is sine wave, and forward driving signal can be in the present invention
The voltage or electric current of random waveform, while the reverse drive signals can be continuous signal, followed by forward driving signal
Or there are vacant driving signal, the reverse drive signals followed by forward driving signals among the reverse drive signals
Or vacant driving signal, the reverse drive signals can be backward voltage, reverse current or are alternately present reversed
Voltage and reverse current, the present invention provides the embodiment of multiple QLED driving methods based on sine wave as a result,.
Referring to Fig. 2, in the first embodiment of the QLED driving method provided by the invention based on sine wave, it is described anti-
It is backward voltage to driving signal, the waveform of forward driving signal is sine wave, after applying a backward voltage to QLED device,
It is in QLED under certain reversed electric field, under reversed electric field, the charge for being gathered in interface accessory is driven to QLED by electric field
Outside device, the backward voltage of sine wave changes the potential barrier of defect potential well, makes to be limited to potential well by the intensity of adjusting reversed electric field
In charge be more likely to escape, thus reduce limitation charge density, further promoted QLED device service life.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, guarantee in QLED device, PN junction will not lose
Diode characteristic, the reverse drive signals and forward driving signal form a drive cycle, the time of the backward voltage
The percentage r for accounting for the period is 1%-99%, and the frequency f of backward voltage is greater than or equal to 60Hz, the amplitude Vre of the backward voltage
For -0.1V ~ -10V, when it is implemented, suitable percentage, frequency and amplitude that can according to the actual situation in range of choice, with
The promotion effect being optimal.
Please continue to refer to Fig. 2 and Fig. 3, in a specific embodiment, the frequency of the backward voltage is that f is 60Hz,
The percentage r that the time of backward voltage accounts for the period is 50%, and the amplitude Vre of backward voltage is -3V, as shown in figure 3, using reversed
The actual life attenuation curve of the QLED of voltage driving is longer than the life time decay curve of not normal driving, and attenuation degree obviously subtracts
It is slow.
Referring to Fig. 4, in the second embodiment of the QLED driving method provided by the invention based on sine wave, it is described anti-
It is backward voltage to driving signal, there are vacant driving signals among the reverse drive signals, and the reverse drive signals can
With followed by forward driving signal or followed by vacant driving signal, driving principle as in first embodiment,
This is repeated no more.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, the reverse drive signals, forward driving letter
Number and vacant driving signal form a drive cycle, the time of the followed by backward voltage of forward driving signal accounts for the hundred of period
Divide than being ra, the percentage that the time of the backward voltage of followed by vacant driving signal accounts for the period is rb, vacant driving signal
The percentage that time accounts for the period is r0, and the percentage ra+rb that the time of reverse drive signals accounts for the period is 1%-99%, described reversed
The frequency f of voltage is greater than or equal to 60Hz, and the amplitude Vre of the backward voltage is -0.1V ~ -10V, when it is implemented, can basis
Suitable percentage, frequency and amplitude in actual conditions range of choice, with the promotion effect being optimal.
Please continue to refer to Fig. 5, in a specific embodiment, the frequency of the backward voltage is that f is 100Hz, is closely followed
The backward voltage of forward driving signal time account for the period percentage ra be 0%, the reversed electricity of followed by vacant driving signal
The percentage rb that the time of pressure accounts for the period is 20%, and the percentage r0 that the time of vacant driving signal accounts for the period is 15%, reversed electricity
The amplitude Vre of pressure is -3V, as shown in figure 5, being longer than using the actual life attenuation curve of the QLED of backward voltage driving without just
The life time decay curve often driven, attenuation degree obviously slow down.
Referring to Fig. 6, in the 3rd embodiment of the QLED driving method provided by the invention based on sine wave, it is described anti-
It is reverse current to driving signal, by applying reverse current, injects certain electronics to the hole side of QLED, infused to electronics side
Enter certain hole, to neutralize the carrier for the anti-type being limited in QLED device, reduces the density of limitation charge, into one
Step promotes the service life of QLED device.
When it is implemented, the reverse current is less than the breakdown current of QLED, guarantee the normal use of QLED, it is described reversed
Driving signal and forward driving signal form a drive cycle, and the percentage r that the time of the reverse current accounts for the period is 1%-
99%, the frequency f of the reverse current are greater than or equal to 60Hz, and the amplitude Ire of the reverse current is -0.0001Am/cm-2~-
1Am/cm-2, when it is implemented, suitable percentage, frequency and amplitude that can according to the actual situation in range of choice, to reach most
Excellent promotion effect.
Referring to Fig. 7, in a specific embodiment, the frequency of the reverse current is that f is 60Hz, reverse current
The percentage r that time accounts for the period is 50%, and the amplitude Ire of reverse current is -0.001Am/cm-2, as shown in fig. 7, using reversed electricity
The actual life attenuation curve of the QLED of driving is pressed to be longer than the life time decay curve of not normal driving, attenuation degree obviously subtracts
It is slow.
Referring to Fig. 8, in the fourth embodiment of the QLED driving method provided by the invention based on sine wave, it is described anti-
It is reverse current to driving signal, there are vacant driving signals among the reverse drive signals, and the reverse drive signals can
With followed by forward driving signal or followed by vacant driving signal, driving principle as in 3rd embodiment,
This is repeated no more.
When it is implemented, the reverse current is less than the breakdown current of QLED, the reverse drive signals, forward driving letter
Number and vacant driving signal form a drive cycle, the time of the followed by reverse current of forward driving signal accounts for the hundred of period
Divide than being ra, the percentage that the time of the reverse current of followed by vacant driving signal accounts for the period is rb, vacant driving signal
The percentage that time accounts for the period is r0, and the percentage ra+rb that the time of reverse drive signals accounts for the period is 1%-99%, described reversed
The frequency f of electric current is greater than or equal to 60Hz, and the amplitude Ire of the reverse current is -0.0001Am/cm-2~-1Am/cm-2, specifically
When implementation, suitable percentage, frequency and amplitude that can according to the actual situation in range of choice, with the promotion effect being optimal
Fruit.
Please continue to refer to Fig. 9, in a specific embodiment, the frequency of the reverse current is that f is 120Hz, is closely followed
The reverse current of forward driving signal time account for the period percentage ra be 30%, followed by vacant driving signal it is reversed
The percentage rb that the time of electric current accounts for the period is 0%, and the percentage r0 that the time of vacant driving signal accounts for the period is 15%, reversed electricity
The amplitude Ire of stream is -0.002 Am/cm-2, as shown in figure 9, the actual life attenuation curve of the QLED using backward voltage driving
It is longer than the life time decay curve of not normal driving, attenuation degree obviously slows down.
Referring to Fig. 10, in the 5th embodiment of the QLED driving method provided by the invention based on sine wave, it is described
Reverse drive signals are the backward voltage and reverse current being alternately present, due to above respectively to backward voltage and reverse current
Driving principle be described in detail, details are not described herein.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, the reverse current is less than the breakdown of QLED
Electric current, the percentage that the time of the backward voltage accounts for the period is rV, and the percentage that the time of the reverse current accounts for the period is
RI, the percentage rV+rI that the sum of the backward voltage and the time of reverse current account for the period is 1%-99%, and the frequency f of driving is big
In or be equal to 60Hz, the amplitude Vre of the backward voltage is -0.1V ~ -10V, the amplitude Ire of the reverse current is -
0.0001Am/cm-2~-1Am/cm-2。
Figure 11 is please referred to, in a specific embodiment, the frequency of driving is that f is 80Hz, and the time of reverse current accounts for
The percentage rI in period is 50%, and the amplitude Ire of reverse current is -0.001Am/cm-2, the time of backward voltage accounts for the hundred of period
Dividing than rV is 40%, and the amplitude of backward voltage is -3V, as shown in figure 11, is decayed using the actual life for the QLED being driven in the reverse direction bent
Line is longer than the life time decay curve of not normal driving, and attenuation degree obviously slows down.
Figure 12 is please referred to, it is described in the sixth embodiment of the QLED driving method provided by the invention based on sine wave
Reverse drive signals are the backward voltage and reverse current being alternately present, there are vacant driving signal among reverse drive signals,
The reverse drive signals can followed by forward driving signal or followed by vacant driving signal.
When it is implemented, the backward voltage is less than the breakdown voltage of QLED, the reverse current is less than the breakdown of QLED
Electric current, the reverse drive signals, forward driving signal and vacant driving signal form a drive cycle, the backward voltage
Time account for the period percentage be rV, the time of the reverse current account for the period percentage be rI, the backward voltage and
The percentage rV+rI that the sum of time of reverse current accounts for the period is 1%-99%, and the time of vacant driving signal accounts for the percentage in period
Than being -0.1V ~ -10V for the amplitude Vre of r0, the backward voltage, the amplitude Ire of the reverse current is -0.0001Am/cm-2
~-1Am/cm-2, when it is implemented, suitable percentage, frequency and amplitude that can according to the actual situation in range of choice, to reach
Optimal promotion effect.
Please continue to refer to Figure 13, in a specific embodiment, the frequency of the reverse current is that f is 120Hz, is closely followed
The reverse current of forward driving signal time account for the period percentage rI be 30%, followed by vacant driving signal it is reversed
The percentage rV that the time of voltage accounts for the period is 10%, and the percentage r0 that the time of vacant driving signal accounts for the period is 15%, reversely
The amplitude Ire of electric current is -0.002 Am/cm-2, the amplitude of backward voltage is that -2V is driven using backward voltage as shown in figure 13
The actual life attenuation curve of QLED be longer than the life time decay curve of not normal driving, attenuation degree obviously slows down.
In conclusion the QLED driving method provided by the invention based on sine wave, passes through the reversed of addition sinusoidal waveform
Electric current or backward voltage change the potential barrier of QLED defect potential well, and the charge eliminating limitation and being gathered in potential well reduces limitation
The density of charge, to further achieve the purpose that increase QLED device lifetime.
It, can according to the technique and scheme of the present invention and its hair it is understood that for those of ordinary skills
Bright design is subject to equivalent substitution or change, and all these changes or replacement all should belong to the guarantor of appended claims of the invention
Protect range.
Claims (9)
1. a kind of QLED driving method based on sine wave, the QLED includes the hearth electrode being arranged from bottom to top, hole injection
Layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and top electrode, which is characterized in that in the hearth electrode and top electricity
It is provided with one drive circuit between pole, when QLED stops working, reverse drive signals are exported by the driving circuit, it is described
The waveform of reverse drive signals is sine wave.
2. the QLED driving method according to claim 1 based on sine wave, which is characterized in that the reverse drive signals
Followed by forward driving signal, the reverse drive signals are continuous signal.
3. the QLED driving method according to claim 1 based on sine wave, which is characterized in that the reverse drive signals
There are vacant driving signal, the reverse drive signals followed by forward driving signals or vacant driving signal for centre.
4. the QLED driving method according to claim 2 or 3 based on sine wave, which is characterized in that described to be driven in the reverse direction
Signal is backward voltage, and the backward voltage is less than the breakdown voltage of QLED.
5. the QLED driving method according to claim 4 based on sine wave, which is characterized in that the backward voltage when
Between to account for the percentage in period be 1%-99%, the frequency of the backward voltage is greater than or equal to 60Hz, the amplitude of the backward voltage
For -0.1V ~ -10V.
6. the QLED driving method according to claim 2 or 3 based on sine wave, which is characterized in that described to be driven in the reverse direction
Signal is reverse current, and the reverse current is less than the breakdown current of QLED.
7. the QLED driving method according to claim 6 based on sine wave, which is characterized in that the reverse current when
Between to account for the percentage in period be 1%-99%, the frequency of the reverse current is greater than or equal to 60Hz, the amplitude of the reverse current
For -0.0001Am/cm-2~-1Am/cm-2。
8. the QLED driving method according to claim 2 or 3 based on sine wave, which is characterized in that described to be driven in the reverse direction
Signal is the backward voltage and reverse current being alternately present, and the backward voltage is less than the breakdown voltage of QLED, the reversed electricity
Stream is less than the breakdown current of QLED.
9. the QLED driving method according to claim 8 based on sine wave, which is characterized in that the backward voltage and anti-
The percentage for accounting for the period to the sum of the time of electric current is 1%-99%, and the frequency of the reverse drive signals is greater than or equal to 60Hz,
The amplitude of the backward voltage is -0.1V ~ -10V, and the amplitude of the reverse current is -0.0001Am/cm-2~-1Am/cm-2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710369582.4A CN108932925A (en) | 2017-05-23 | 2017-05-23 | A kind of QLED driving method based on sine wave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710369582.4A CN108932925A (en) | 2017-05-23 | 2017-05-23 | A kind of QLED driving method based on sine wave |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108932925A true CN108932925A (en) | 2018-12-04 |
Family
ID=64450304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710369582.4A Pending CN108932925A (en) | 2017-05-23 | 2017-05-23 | A kind of QLED driving method based on sine wave |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108932925A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109410843A (en) * | 2019-01-04 | 2019-03-01 | 京东方科技集团股份有限公司 | Driving method and device, the el light emitting device of electroluminescent device |
| CN112331130A (en) * | 2019-07-31 | 2021-02-05 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
| CN112397014A (en) * | 2019-07-31 | 2021-02-23 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04217293A (en) * | 1990-12-19 | 1992-08-07 | Sharp Corp | Liquid crystal driving circuit |
| CN1294375A (en) * | 1999-10-21 | 2001-05-09 | 株式会社半导体能源研究所 | Electro-optical device |
| CN1541502A (en) * | 2001-08-09 | 2004-10-27 | ������������ʽ���� | Organic electroluminescent display device and driving method thereof |
| CN1828707A (en) * | 2005-03-03 | 2006-09-06 | 株式会社日立显示器 | Method of driving organic el device and display device |
| US20100176736A1 (en) * | 2009-01-15 | 2010-07-15 | Samsung Electronics Co., Ltd. | Method of driving a light source, light source assembly for performing the method, and liquid crystal display apparatus having the same |
| TW201318471A (en) * | 2011-09-21 | 2013-05-01 | Gen Electric | Organic electroluminescent device with space charge/voltage instability stabilization drive |
| CN104362258A (en) * | 2014-11-07 | 2015-02-18 | 北京维信诺科技有限公司 | Organic light-emitting device with long service life |
| CN106098956A (en) * | 2016-07-14 | 2016-11-09 | Tcl集团股份有限公司 | A kind of QLED and preparation method thereof |
-
2017
- 2017-05-23 CN CN201710369582.4A patent/CN108932925A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04217293A (en) * | 1990-12-19 | 1992-08-07 | Sharp Corp | Liquid crystal driving circuit |
| CN1294375A (en) * | 1999-10-21 | 2001-05-09 | 株式会社半导体能源研究所 | Electro-optical device |
| CN1541502A (en) * | 2001-08-09 | 2004-10-27 | ������������ʽ���� | Organic electroluminescent display device and driving method thereof |
| CN1828707A (en) * | 2005-03-03 | 2006-09-06 | 株式会社日立显示器 | Method of driving organic el device and display device |
| US20100176736A1 (en) * | 2009-01-15 | 2010-07-15 | Samsung Electronics Co., Ltd. | Method of driving a light source, light source assembly for performing the method, and liquid crystal display apparatus having the same |
| TW201318471A (en) * | 2011-09-21 | 2013-05-01 | Gen Electric | Organic electroluminescent device with space charge/voltage instability stabilization drive |
| CN104362258A (en) * | 2014-11-07 | 2015-02-18 | 北京维信诺科技有限公司 | Organic light-emitting device with long service life |
| CN106098956A (en) * | 2016-07-14 | 2016-11-09 | Tcl集团股份有限公司 | A kind of QLED and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 周志敏 等: "《漫步LED世界 基础篇》", 31 July 2012, 国防工业出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109410843A (en) * | 2019-01-04 | 2019-03-01 | 京东方科技集团股份有限公司 | Driving method and device, the el light emitting device of electroluminescent device |
| US11094250B2 (en) | 2019-01-04 | 2021-08-17 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Method and apparatus for an electroluminescent device |
| CN112331130A (en) * | 2019-07-31 | 2021-02-05 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
| CN112397014A (en) * | 2019-07-31 | 2021-02-23 | Tcl集团股份有限公司 | Drive method and drive device of quantum dot light-emitting diode and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102610725B (en) | Semiconductor quantum dot light-emitting diode and preparing method thereof | |
| CN108932925A (en) | A kind of QLED driving method based on sine wave | |
| CN103985354B (en) | A kind of array base palte and display floater | |
| CN109036283A (en) | The driving circuit and driving method of organic light-emitting field effect transistor, display device | |
| CN110556459B (en) | Color mu LED light-emitting display device | |
| CN108934097A (en) | A kind of QLED driving method based on electromagnetic wave | |
| CN105161581A (en) | Luminescent device with illumination and communication double functions | |
| CN108962131A (en) | A kind of QLED driving method based on triangular wave | |
| CN108962127A (en) | A kind of QLED device and its reverse drive mode | |
| CN108962128A (en) | A kind of QLED driving method based on square wave | |
| CN108934098B (en) | QLED driving method based on oblique wave | |
| CN107768420A (en) | A kind of display device | |
| CN204375750U (en) | A kind of device based on the luminescence of OPV driving OLED | |
| CN108962133A (en) | A kind of QLED device and its reverse current drive mode | |
| WO2017000370A1 (en) | Charge connecting layer, manufacturing method therefor, and stacked oled device | |
| CN108962130A (en) | It is a kind of to be driven in the reverse direction method applied to default in video display process | |
| CN108932926A (en) | A kind of QLED device and its reversed driven mode | |
| CN105977396A (en) | OLED backboard and manufacturing method thereof, and display device | |
| CN108962129A (en) | A kind of QLED device and its backward voltage drive mode | |
| CN201946599U (en) | Scan electrode wiring structure for passive matrix organic light-emitting diodes | |
| CN105932178B (en) | The preparation method of organic electroluminescence device | |
| CN108932928A (en) | A kind of driving method of passive type driving quantum dot display panel | |
| CN112331130A (en) | Drive method and drive device of quantum dot light-emitting diode and display device | |
| CN103117341A (en) | Multi-quantum well structure capable of improving luminous efficiency of GaN based LED (light-emitting diode) | |
| CN105428545B (en) | A kind of white organic LED of low pressure and high color stability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181204 |
|
| RJ01 | Rejection of invention patent application after publication |