CN108931883A - A method of optimization mask layout - Google Patents
A method of optimization mask layout Download PDFInfo
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- CN108931883A CN108931883A CN201710351038.7A CN201710351038A CN108931883A CN 108931883 A CN108931883 A CN 108931883A CN 201710351038 A CN201710351038 A CN 201710351038A CN 108931883 A CN108931883 A CN 108931883A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005457 optimization Methods 0.000 title claims abstract description 19
- 238000002834 transmittance Methods 0.000 claims abstract description 18
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 238000005286 illumination Methods 0.000 claims description 14
- 239000013589 supplement Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010057855 Hypotelorism of orbit Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Abstract
The present invention provides a kind of method for optimizing mask layout, including step S1：The mask layout for the floor layout shape being laid out is provided, mask layout includes the first main graphic and multiple first Sub-resolution assist features for being laid in around the first main graphic, multiple second Sub-resolution assist features for further including the second main graphic and being laid in around the second main graphic, first Sub-resolution assist features and the second Sub-resolution assist features define a conflict area；Step S2：The conflict area is intercepted on mask layout, and obtains the light transmittance distribution grayscale image of the conflict area, is the Sub-resolution assist features setting priority in the conflict area according to the gray scale Valued Statistics size that light transmittance is distributed grayscale image；Step S3：Remove the low Sub-resolution assist features of priority, the mask layout after obtaining optimization.The present invention can effectively supplement the spatial frequency around main graphic.
Description
【Technical field】
The present invention relates to photoetching resolution enhancing technical field more particularly to a kind of methods for optimizing mask layout.
【Background technique】
With the continuous diminution of chip fabrication techniques node, the process window of intensive lines and sparse lines is poor on mask
It is different seem be more and more obvious, the process window of sparse lines is smaller, can largely restrict the photoetching process of entire mask
Window.
To solve the above-mentioned problems, sub- point can be added around the sparse figure of the reticle pattern corresponding to mask
Resolution secondary graphics (Sub Resolution Assist Features, SRAF), also referred to as scattering strip (Scattering
Bar, SB), allow it to seem more dense, while can also supplement the spatial frequency around main graphic.Place scattering strip most critical
It is to increase process window as far as possible, but do not transfer on photoresist after guaranteeing exposure.
SRAF is usually around the sparse figure of contact layer (Contact Layer) and metal layer (Metal layer)
It is inserted into the form of scattering strip, the resolution ratio to guarantee entire chip is consistent with lithographic process window.
Generally, secondary graphics are inserted into there are two types of mode, are SRAF (MB-SRAF) based on model respectively and rule-based
SRAF (RB-SRAF).
MB-SRAF is inserted into scattering strip according to stringent optical model, by calculating around figure.This method time-consuming mistake
It is long, it is unfavorable for the manufacturing of chip.
RB-SRAF is then to set series of rules according to the position of main graphic or targeted graphical, places according to rule
SRAF, validity and coverage rate can be more the cognition and experience to technique dependent on engineer.This method coverage rate is low,
Relative complex figure distribution is tended not to be applicable in very well, but is had the advantages that time-consuming short.
Adding SRAF for sparse figure is RET (Resolution Enhancement
Technique, RET) important method.Particularly to 45nm node technique below, technique can be increased by effectively placing SRAF
Window improves the resolution ratio of figure.
SRAF must be placed at position certain around main graphic or targeted graphical could be sufficiently effective, the width of SRAF,
SRAF is at a distance from main graphic or targeted graphical and the distance between adjacent S RAF, these parameters are all to determine SRAF validity
And the key parameter of the manufacturability of chip.In actual production, a part of representational test chart is usually first designed
Shape (Test Pattern) is lithographically this partial graphical addition scattering strip using MB-SRAF or inverting, then in conjunction with model or
The result of person's inverting photoetching sums up set of rule, these rules are applied in large-scale production.Thus by two methods
It combines, makes SRAF that there is comparable accuracy, also largely reduce temporal loss.However, RB-SRAF method
Itself is there are also the space of optimization, for example, two main graphics are apart from close, the SRAF added for them can overlap very much or away from
It is close from excessively, difficulty is caused to the manufacture of mask, therefore also needs it to be cleared up after having added SRAF, it is final to guarantee
The presence not conflicted.
For RB-SRAF, when placing, priority is set for it,
The placement order of SRAF can be thus determined according to priority, and when two SRAF are conflicted with each other, it can foundation
Priority is accepted or rejected.
The priority of sub- rate secondary graphics (SRAF) respectively in existing technology in mask layout is big according to its area
Position small and apart from main graphic is arranged.Thus inevitably allow area smaller,
But can effectively supplement the spatial frequency around main graphic, increase process window SRAF be rejected, will cause in this way
The process window of chip manufacturing becomes smaller, and production yield reduces.
【Summary of the invention】
To overcome technical problem of the existing technology, the present invention provides a kind of method for optimizing mask layout.
The technical solution that the present invention solves technical problem is to provide a kind of method for optimizing mask layout, including following step
Suddenly, S1：The mask layout for the floor layout shape being laid out is provided, the mask layout includes the first main graphic and is laid in
Multiple first Sub-resolution assist features around first main graphic, the mask layout further include the second main graphic and laying
Multiple second Sub-resolution assist features around the second main graphic, first Sub-resolution assist features and the second Asia point
Resolution secondary graphics define a conflict area；Step S2：The conflict area is intercepted on mask layout, and obtains the battleground
The light transmittance in domain is distributed grayscale image, is in the conflict area according to the gray scale Valued Statistics size that the light transmittance is distributed grayscale image
Sub-resolution assist features set priority；Step S3：The low Sub-resolution assist features of priority are removed, after obtaining optimization
Mask layout.
Preferably, grayscale image is distributed by the light transmittance that litho machine obtains the conflict area in step S2, the litho machine
Illumination condition is dark field or bright field.
It preferably, is priority by Sub-resolution assist features gray scale Valued Statistics, under bright field, with most under dark field
High-gray level value subtracts the absolute value of the difference of Sub-resolution assist features gray scale Valued Statistics as priority.
Preferably, the gray scale Valued Statistics can be the gray scale for being included of the average gray value in the region, the region
The average value of the Weight of value peak value or the average gray value and gray scale peak value in the region proportionally.
Preferably, the average gray value in the region and gray scale peak value weight ratio are 1:1.
The reticle pattern that method provided by the present invention is optimized can more have compared with traditional reticle pattern optimization method
Effect promotes the depth of focus, to improve photoetching resolution, the process window that will cause chip manufacturing in this way becomes larger, and production yield mentions
It is high.
【Detailed description of the invention】
Fig. 1 is a kind of flow chart for the method for optimizing reticle pattern of the present invention.
Fig. 2 is that there are the Subresolution of conflict auxiliary on a kind of mask layout for the method for optimizing reticle pattern of the present invention
Figure part domain schematic diagram.
Fig. 3 is structure enlargement diagram of the Fig. 2 at A.
Fig. 4 is the distribution grayscale image of exposure mask light transmittance corresponding to Fig. 2.
Fig. 5 is a kind of exposure mask light transmittance distribution ash of the method main graphic for optimizing reticle pattern of the present invention under bright field conditions
Degree figure.
Fig. 6 is a kind of exposure mask light transmittance distribution ash of the method main graphic for optimizing reticle pattern of the present invention under dark fieid conditions
Degree figure.
【Specific embodiment】
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing and embodiment,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
Referring to Fig. 1, the present invention provides a kind of method for optimizing reticle pattern comprising following steps.
Step S1：The mask layout for the floor layout shape being laid out is provided, the mask layout includes the first main graphic
And multiple first Sub-resolution assist features around the first main graphic are laid in, the mask layout further includes the second master map
Shape and multiple second Sub-resolution assist features being laid in around the second main graphic, first Sub-resolution assist features
A conflict area is defined with the second Sub-resolution assist features.
Specifically, the design configuration of an objective chip is provided, is designed on mask according to the design configuration of objective chip
The corresponding mask layout of objective chip design configuration, mask layout is according to the photoetching demand cloth of the design configuration of objective chip
If.Mask layout includes multiple main graphics, around different main graphics when rule-based placement Sub-resolution assist features, no
It is evitable to there is conflict, need the Sub-resolution assist features that there is conflict to these to accept or reject, to guarantee through overexposure
Figure afterwards is consistent with targeted graphical, that is, guarantees that more diffraction times for carrying spatial modulation information is allowed to participate in imaging, increase work
Skill window improves the resolution ratio of figure.
Fig. 2 and Fig. 3 are please referred to, due to including multiple main graphics being closer on the domain on mask, in difference
Around main graphic when rule-based placement Sub-resolution assist features, need to these exist conflict Sub-resolution assist features into
Row is accepted or rejected, to guarantee the exposure accuracy of main graphic.Sub-resolution assist features between different main graphics, which conflict with each other, to be referred to
Hypotelorism between the Sub-resolution assist features of adjacent main graphic, violate mask preparation require (Mask Rule Check,
MRC) the case where, is not directed to the equitant situation of SRAF.
Referring to figure 2., interception one is there are the region S of Sub-resolution assist features conflict on mask layout, in the S of the region
Including four main graphics, it is respectively labeled as 101a, 101b, 101c, 101d and is arranged in multiple around each main graphic
Sub-resolution assist features wherein, are located in the middle two main graphic difference 101b and 101c, two main graphics point labeled as 103
Other domain of the existence A between 101b and 101c.
Referring to Fig. 3, region A in there are two exist conflict Sub-resolution assist features be respectively labeled as 103a and
103b.Two Sub-resolution assist features 103a of region A belong to main graphic 101b, based on Sub-resolution assist features 103b
The Sub-resolution assist features of figure 101c.
Multiple Sub-resolution assist features circles, Subresolution are provided with around main graphic 101b and main graphic 101c
It is the center of circle in circumferentially distributed in the main graphic that secondary graphics circle, which is using main graphic,.Different Sub-resolution assist features circles with it is same
The distance of main graphic is not identical.Wherein it is known as first lap Asia point apart from nearest Sub-resolution assist features circle apart from the main graphic
Resolution secondary graphics, the Sub-resolution assist features circle close apart from next are known as the second Sub-resolution assist features circle, similarly according to
It is secondary to analogize.
Wherein Sub-resolution assist features 103a is main graphic 101b first lap Sub-resolution assist features, and Subresolution is auxiliary
Helping figure 103b is main graphic 101c third circle Sub-resolution assist features.Sub-resolution assist features 103a to main graphic 101a
Distance be less than Sub-resolution assist features 103b to the same edge main graphic 101b distance.
The length of Sub-resolution assist features 103a is D1, D1=80nm, width W1, W1=20nm.Subresolution is auxiliary
The length for helping figure 103b is D2, D2=120, width W2, W2=20.Wherein D2>D1, W1=W2.Subresolution auxiliary figure
Spacing between shape 103a and Sub-resolution assist features 103b is W3, and the value of W3 is less than spacing threshold values, so that Subresolution is auxiliary
It helps figure 103a and Sub-resolution assist features 103b to there is conflict, according to mask preparation rule, needs to remove wherein one
It is a, and according to existing rule, the biggish Sub-resolution assist features 103b of area can be allowed to possess higher priority and by most
It is retained eventually, the lesser Sub-resolution assist features 103a of area can then be removed.However Sub-resolution assist features 103a makees
The depth of focus can be more improved for the first lap Sub-resolution assist features of main graphic 101b, to more improve master map
The resolution ratio of shape, therefore traditional way can remove the Sub-resolution assist features that should retain.
The number of main graphic is four but is not limited to four in the present embodiment, can be two, three or five, again
It does not repeat them here.It is two there are the Sub-resolution assist features of conflict, but is not limited to two, is also possible to two or more.
Step S2：The conflict area is intercepted on mask layout, and obtains the light transmittance distribution gray scale of the conflict area
Figure is the Sub-resolution assist features in the conflict area according to the gray scale Valued Statistics size that the light transmittance is distributed grayscale image
Set priority.
Referring to Fig. 4, being masked optimization to region S in mask layout in Fig. 2, which is obtained by emulation
Exposure mask light transmittance is distributed grayscale image, while obtaining the gray scale Valued Statistics size of the exposure mask light transmittance distribution grayscale image in the region.
For statistic in the present embodiment by gray value is preferably the average gray value of region S.
NXT1950i litho machine, numerical aperture NA=1.35, wavelength 193nm, ring illumination, illumination item are used in simulation
Part is bright field.
The average gray value for calculating 103a and 103b inclusion region, is denoted as According to the gray scale of obtained grayscale image
Value sets priority for Sub-resolution assist features.Gray value is the depth of the color at black white image midpoint, range generally from
0 to 255, black 0, white is 255.After exposure mask light transmittance distribution grayscale image is converted into grayscale image, it is assumed that it is by m × n
A pixel, m and n are natural number, then the information of each pixel of image can be indicated with the matrix that a m row n is arranged, and are denoted as
Gmn, element gijIndicate the gray value of corresponding position pixel in grayscale image.The average gray value of image is all elements gij
Average value, be denoted asCalculation formula is as follows.
When illumination condition is bright field, defining Sub-resolution assist features priority size is
The present embodiment is P using the priority that MTALB program calculation obtains 103aAThe average gray value of=111,103b are PB=65, PA
> PBThat is priority of the priority of 103a higher than 103b.
That is, when illumination condition is bright field, as shown in figure 5, only showing main graphic in the exposure mask light transmittance distribution ash of bright field
Degree figure, under the conditions of this, defining Sub-resolution assist features priority size is
When illumination condition is dark field, as shown in fig. 6, the exposure mask light transmittance for only showing main graphic in dark field is distributed gray scale
Figure, under the conditions of this, defining Sub-resolution assist features priority size is
It is appreciated that, when illumination condition is bright field, Sub-resolution assist features priority size P can be with as deformation
It isWherein A is maximum gradation value.
Step S3：Remove the low Sub-resolution assist features of priority, the mask layout after obtaining optimization.
Specifically, according to step S2 it is found that should retain because the priority of 103a is higher, 103b should be removed, that is, be removed
The low Sub-resolution assist features 103b of priority, the mask layout after obtaining optimization.If the Asia of multiple regions in mask layout
There is conflict in resolution ratio secondary graphics, then optimize to the Sub-resolution assist features in multiple region, remove priority
Low Sub-resolution assist features, the mask layout after obtaining optimization, for use in the mask plate of manufacture chip.
When the Sub-resolution assist features priority to conflict if it exists is identical, the biggish Subresolution auxiliary figure of Retention area
Shape.Do so the manufacture for being also beneficial to mask.
The present invention provide second embodiment, second embodiment different from the first embodiment, in the ash of step S2 region S
The statistic of angle value for region S the gray value peak value for being included.
Specifically, the peak value for calculating the gray value of Sub-resolution assist features 103a and 103b inclusion region, is denoted as respectively
PeakaAnd Peakb, and according to obtained peak value, priority is set for Sub-resolution assist features, calculation formula is as follows：
Peak=max { gij}
When illumination condition is bright field, as shown in figure 5, it is big to define Sub-resolution assist features priority under the conditions of this
Small is P=(255-Peak).When illumination condition is dark field, as shown in fig. 6, defining Subresolution auxiliary figure under the conditions of this
Shape priority size is P=Peak.
The present embodiment is P using the priority that MTALB program calculation obtains 103aa=86, the average gray value of 103b is
Pb=49, PaThe priority of > Pb, that is, 103a is higher than the priority of 103b.The low Sub-resolution assist features of priority are removed, are obtained
Mask layout after taking optimization.
It is appreciated that, when illumination condition is bright field, Sub-resolution assist features priority size P can be with as deformation
It isWherein A is maximum gradation value.
The present invention provide 3rd embodiment, 3rd embodiment different from the first embodiment, in the ash of step S2 region S
The statistic of angle value be region S in average gray value and gray scale peak value according to certain Weight average value.
Specifically, by Sub-resolution assist features 103a and 103b inclusion region average gray value and gray scale peak value press
It is average according to certain Weight, it is denoted as W respectivelyaAnd Wb, and according to obtained weighted average, it is Sub-resolution assist features
Priority is set, calculation formula is as follows：
Wherein, w1、w2RespectivelyWith the weight of Peak, and w1+w2=1, in the present embodiment, take w1=w2=0.5.When
When illumination condition is bright field, as shown in figure 5, definition Sub-resolution assist features priority size is P=under the conditions of this
(255-W).When illumination condition is dark field, as shown in fig. 6, it is big to define Sub-resolution assist features priority under the conditions of this
Small is P=W.
The present embodiment is W using the priority that MTALB program calculation obtains 103aa=98.5, the average gray value of 103b
For Wb=57, PA> PBThat is priority of the priority of 103a higher than 103b.The low Sub-resolution assist features of priority are removed,
Mask layout after obtaining optimization.
It is appreciated that, when illumination condition is bright field, Sub-resolution assist features priority size P can be with as deformation
It isWherein A is maximum gradation value.
Specifically, according to step S2 it is found that the priority of Sub-resolution assist features 103a is all in 3 kinds of statistical methods
Than 103b high, 103a should be retained.Further, in order to verify it is provided by the present invention optimization mask layout optimization method elder generation
Into property, the reticle pattern conflict area for retaining 103a and 103b is emulated respectively, the depth of focus is obtained and exposure is tolerant
The simulation result of degree, as shown in table 1.
Table 1：
| The SRAF of reservation | The depth of focus | Exposure latitude |
| 103a | 123.6 | 30.99 |
| 103b | 98.12 | 29.63 |
As can be seen from the results, the reticle pattern and traditional reticle pattern that method provided by the present invention is optimized are excellent
Change method, to improve photoetching resolution, will cause the process window of chip manufacturing compared to more can effectively promote the depth of focus in this way
Mouth becomes larger, and production yield improves.
The foregoing is merely present pre-ferred embodiments, are not intended to limit the invention, it is all principle of the present invention it
Any modification made by interior, equivalent replacement and improvement etc. should all be comprising within protection scope of the present invention.
Claims (5)
1. a kind of method for optimizing mask layout, it is characterised in that：Include the following steps,
Step S1：The mask layout of floor layout shape being laid out is provided, the mask layout include the first main graphic and
Multiple first Sub-resolution assist features being laid in around the first main graphic, the mask layout further include the second main graphic with
And multiple second Sub-resolution assist features around the second main graphic are laid in, first Sub-resolution assist features and
Two Sub-resolution assist features define a conflict area；
Step S2：The conflict area is intercepted on mask layout, and obtains the light transmittance distribution grayscale image of the conflict area, root
Gray scale Valued Statistics size according to light transmittance distribution grayscale image is the Sub-resolution assist features setting in the conflict area
Priority；
Step S3：Remove the low Sub-resolution assist features of priority, the mask layout after obtaining optimization.
2. the method for optimization mask layout as described in claim 1, it is characterised in that：Being obtained in step S2 by litho machine should
The light transmittance of conflict area is distributed grayscale image, and the illumination condition of the litho machine is dark field or bright field.
3. the method for optimization mask layout as claimed in claim 2, it is characterised in that：Under dark field, Subresolution is assisted
Figure gray scale Valued Statistics are that priority subtracts Sub-resolution assist features gray scale Data-Statistics with maximum gradation value under bright field
The absolute value of the difference of amount is as priority.
4. the method for optimization mask layout as claimed in claim 3, it is characterised in that：The gray scale Valued Statistics can be this
The average gray value in region, the average gray value of the gray value peak value or the region that are included in the region and gray scale peak value according to
The average value of the Weight of ratio.
5. the method for optimization mask layout as claimed in claim 4, it is characterised in that：The average gray value and gray scale in the region
Peak value weight ratio is 1:1.
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