CN108922928A - A kind of backside structure improving two-sided PERC cell backside efficiency - Google Patents
A kind of backside structure improving two-sided PERC cell backside efficiency Download PDFInfo
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- CN108922928A CN108922928A CN201810728981.XA CN201810728981A CN108922928A CN 108922928 A CN108922928 A CN 108922928A CN 201810728981 A CN201810728981 A CN 201810728981A CN 108922928 A CN108922928 A CN 108922928A
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- main grid
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 7
- 238000003466 welding Methods 0.000 claims abstract description 70
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 42
- 239000004411 aluminium Substances 0.000 claims abstract description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004332 silver Substances 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229940037003 alum Drugs 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Plates And Materials Therefor (AREA)
Abstract
The invention discloses a kind of backside structure for improving two-sided PERC cell backside efficiency, including cell piece, the cell piece back side is arranged in parallel with more main gate lines, and the silver main grid is fixedly connected with aluminium main grid interval, and the length ratio of silver-colored main grid and aluminium main grid is 1:2；Four corners of the aluminium main grid, which run through, is inserted with conductive silver column, high welding and low welding have been respectively fixedly connected in the main gate line, the high welding and low welding on silver-colored main grid are arranged in parallel, and the high welding and low welding on aluminium main grid are arranged in a crossed manner.The present invention can effectively reduce the width of main grid part, to realize the effect for reducing shading-area, conventional use of aluminium main grid is replaced with into aluminium, the silver-colored main grid that interval uses, to realize smaller current loss in a manner of reducing contact resistance, reduce the trouble degree of welding, and the stability after welding obtains promotion largely, and practicability is very strong, highly promotes.
Description
Technical field
The present invention relates to technical field of photovoltaic modules, specially a kind of back side knot for improving two-sided PERC cell backside efficiency
Structure.
Background technique
PERC (passivation emitter and back contacts) technology is the crystal silicon solar battery most improved efficiency of cost performance in recent years
Means, it is high with conventional batteries producing line compatibility, and producing line investment for trnasforming urban land is at low cost, and PERC technology is the master in the following 3-5
Galvanic electricity pool technology.
Two-sided PERC battery only slightly changes the structure of PERC battery, and the Full connected Al-BSF at the back side is changed into local aluminum
Grid line, cost is suitable with single side PERC product, when being packaged into solar double-glass assemblies, has the additional power gain of 10%-30%, is PERC
The future developing trend of component.
Double-side cell front efficiency is suitable with single side battery, and cell backside efficiency is about 16% or so.Back side efficiency
Also have and have greatly improved and optimize space, in the case where keeping front constant, it is two-sided at present for pursuing high back side efficiency
The target that PERC technology is pursued.
In the prior art, about the method for promoting PERC cell backside efficiency, however it remains following more apparent defect：
1, the back up mode of current double-side cell is first in one of press printing back electrode of silk screen, bis- printing machine of Zai print
The thin grid of brush alum gate line and main grid part, the main grid part that such method prints is generally wider, and shading-area is larger, generates
Electric current it is less；2, in addition, the contact resistance of aluminium and silicon is larger, contact resistance also has the space that has some improvement；3, in the later period
Welding welding process in, pad is more, and welding process is cumbersome, and weld after black box stability it is poor, have
It is to be modified.
Summary of the invention
It is above-mentioned to solve the purpose of the present invention is to provide a kind of backside structure for improving two-sided PERC cell backside efficiency
The problem of being proposed in background technique.
To achieve the above object, the present invention provides the following technical solutions：
A kind of backside structure improving two-sided PERC cell backside efficiency, including cell piece, the cell piece back side are parallel
More main gate lines are provided with, the main gate line two sides are fixedly connected to secondary grid line, and the main gate line includes silver-colored main grid and aluminium master
Grid, the silver main grid are fixedly connected with aluminium main grid interval, and the length ratio of silver-colored main grid and aluminium main grid is 1:2；
Four corners of the aluminium main grid, which run through, is inserted with conductive silver column, and the conductive silver column is divided into two Gao Yinzhu
The low silver column with two, the high silver-colored column and low silver-colored column are in diagonal line distribution setting；
High welding and low welding are respectively fixedly connected in the main gate line, the high welding on silver-colored main grid and low
Welding is arranged in parallel, and the high welding and low welding on aluminium main grid are arranged in a crossed manner.
Preferably, welding slot is symmetrically offered on the silver-colored main grid, is offered between the welding slot and connects light slot.
Preferably, threading slot is offered in the high silver-colored column and low silver-colored column.
Preferably, the silver-colored main grid and aluminium main grid offer arc groove close to cell piece side.
Preferably, on the aluminium main grid perforation offer it is several by unthreaded hole.
Compared with prior art, the beneficial effects of the invention are as follows：
1, present invention eliminates the printing of electrode, directly welding is welded on main grid, main grid portion can be effectively reduced
The width divided generates higher electric current to realize the effect for reducing shading-area；
2, the present invention is because silver is significantly less than the contact resistance of aluminium and silicon with the contact resistance of silicon, from the usage amount of silver paste and
It reduces contact resistance to go to consider, conventional use of aluminium main grid is replaced with into aluminium, the silver-colored main grid that interval uses, is from contact resistance
Point is sent out, realizes smaller current loss in a manner of reducing contact resistance；
3, the present invention uses the setting of two root bead bands, by the cooperation of high silver-colored column and low silver-colored column, so that welding is in aluminium main grid
On intersect and laminate, providing pressure prevents solder joint from separating from high silver-colored column and low silver-colored column, and passes through the silver of welding and both ends
The effect being welded and fixed is realized in the welding of main grid, to reduce pad well, reduces the trouble degree of welding, and
And the stability after welding obtains promotion largely.
The present invention can effectively reduce the width of main grid part, thus realize the effect for reducing shading-area, it will be conventional
The aluminium main grid used replaces with aluminium, the silver-colored main grid that interval uses, and realizes smaller electric current in a manner of reducing contact resistance
Loss, reduces pad well, reduces the trouble degree of welding, and the stability after welding obtains largely
Promotion, practicability is very strong, highly promotes.
Detailed description of the invention
Fig. 1 is this cell piece structure schematic diagram in the prior art；
Fig. 2 is cell piece back side overall structure diagram of the invention；
Fig. 3 is main gate line structural schematic diagram of the invention；
Fig. 4 is main gate line structure schematic side view of the invention；
Fig. 5 is main gate line schematic structural cross-sectional view of the invention；
Fig. 6 is aluminium main grid structural schematic diagram of the invention；
Fig. 7 is Gao Yinzhu and low silver-colored column distribution schematic diagram of the invention；
Fig. 8 is high welding and the cross-laminated schematic diagram of low welding of the invention.
In figure：1 cell piece, 2 silver medal main grids, 21 welding slots, 22 connect light slot, 3 aluminium main grids, 4 secondary grid lines, 5 by unthreaded hole, 6 Gao Yin
Column, 7 low silver-colored columns, 8 high weldings, 9 low weldings, 10 arc grooves, 11 threading slots.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 1-8 is please referred to, the present invention provides a kind of technical solution：
In the prior art, as shown in Figure of description 1, it is printed with main grid and secondary grid on cell piece 1, is printed with electricity on main grid
Pole, in this manner it is achieved that main grid wider width, shading-area is excessive, influences cell piece photoelectric conversion efficiency.
A kind of backside structure improving two-sided PERC cell backside efficiency, as shown in Figure of description 2, including cell piece 1,
1 back side of cell piece is arranged in parallel with more main gate lines, and 5 main gate lines are successively arranged in parallel, and main gate line two sides are fixedly connected to
Secondary grid line 4, main gate line include silver-colored main grid 2 and aluminium main grid 3, and silver-colored main grid 2 is fixedly connected with the interval of aluminium main grid 3, and silver-colored main grid 2 and aluminium
The length ratio of main grid 3 is 1:2, the main gate line printed using the ratio has comprehensively considered the usage amount of silver paste and aluminium paste, rationally controls
Economy processed, and contact resistance can be effectively reduced, so that silver paste and the contact action of cell piece 1 are utilized.
Four corners for stating aluminium main grid 3, which run through, is inserted with conductive silver column, and conductive silver column is divided into two high silver-colored column 6 and two
A low silver-colored column 7, high silver column 6 and low silver-colored column 7 are in diagonal line distribution setting, as shown in Figure of description 3, the upper left corner of aluminium main grid 3
It is high silver-colored column 6 with the lower right corner, the upper right corner and the lower left corner of aluminium main grid 3 are low silver-colored column 7, and all aluminium main grids 3 are all made of which
Threading slot 11 is offered in the high silver-colored column 6 of setting and low silver-colored column 7, high silver column 6 and low silver-colored column 7, threading slot 11 is used to intert welding,
So that the connection effect of welding is more preferable.
High welding 8 and low welding 9 are respectively fixedly connected in main gate line, high welding 8 and low welding on silver-colored main grid 2
9 are arranged in parallel, and when high welding 8 and low welding 9 are connected on silver-colored main grid 2, the both ends of main gate line are arranged in silver-colored main grid 2, so will
The both ends of high welding 8 and low welding 9 are welded on the silver-colored main grid 2 at main gate line both ends, realize that every main gate line only needs head and the tail
The purpose of pad at two symmetrically offers welding slot 21 on silver-colored main grid 2, and welding slot 21 is used to place welding, so that welding exists
Can be more steady when placing and welding, it be offered between welding slot 21 and connect light slot 22, can further reduce main gate line
To the shading-area of cell piece 1, the high welding 8 and low welding 9 on aluminium main grid 3 are arranged in a crossed manner, and are connected on high silver-colored column 6
Welding be laminated on the welding being connected on low silver-colored column 7, perforation offers several by unthreaded hole 5 on aluminium main grid 3, is opened by unthreaded hole 5
It is located at welding surrounding, will not be sheltered from by welding, it is very good by light effect.
As shown in Figure of description 8, high welding 8 sequentially passes through high silver-colored column 6 on the aluminium main grid 3 that is located above, low welding 9 according to
Secondary to pass through low silver-colored column 7, high welding 8 is laminated on low welding 9, and then parallel by silver-colored main grid 2, high welding 8 sequentially passes through low silver
Column 7, low welding 9 sequentially pass through high silver-colored column 6, and low welding 9 is laminated on high welding 8 at this time, realize successively cross-laminated effect,
So that welding is after the completion of both ends are welded, middle section is successively laminated, more not easy to fall off.
Preferably as one, silver-colored main grid 2 and aluminium main grid 3 offer arc groove 10, secondary grid line 4 close to 1 side of cell piece
The two sides of arc groove 10 are each attached to, arc groove 10 opens up, and on the one hand can reduce the use of slurry, and another convenience can also drop
The low contact area with cell piece 1, to reduce resistance.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of backside structure for improving two-sided PERC cell backside efficiency, including cell piece (1), cell piece (1) back side
More main gate lines are arranged in parallel with, the main gate line two sides are fixedly connected to secondary grid line (4), it is characterised in that：The main grid
Line includes silver-colored main grid (2) and aluminium main grid (3), and the silver main grid (2) and aluminium main grid (3), which is spaced, to be fixedly connected, and silver main grid (2) and
The length ratio of aluminium main grid (3) is 1:2；
Four corners of the aluminium main grid (3), which run through, is inserted with conductive silver column, and the conductive silver column is divided into two Gao Yinzhu
(6) it is arranged with two low silver-colored columns (7), the Gao Yinzhu (6) and low silver-colored column (7) in diagonal line distribution；
High welding (8) and low welding (9) are respectively fixedly connected in the main gate line, the high weldering being located on silver-colored main grid (2)
Band (8) and low welding (9) are arranged in parallel, and the high welding (8) and low welding (9) on aluminium main grid (3) are arranged in a crossed manner.
2. a kind of backside structure for improving two-sided PERC cell backside efficiency according to claim 1, it is characterised in that：Institute
It states and is symmetrically offered on silver-colored main grid (2) welding slot (21), offered between the welding slot (21) and connect light slot (22).
3. a kind of backside structure for improving two-sided PERC cell backside efficiency according to claim 1, it is characterised in that：Institute
It states in Gao Yinzhu (6) and low silver-colored column (7) and offers threading slot (11).
4. a kind of backside structure for improving two-sided PERC cell backside efficiency according to claim 1, it is characterised in that：Institute
It states silver-colored main grid (2) and aluminium main grid (3) and offers arc groove (10) close to cell piece (1) side.
5. a kind of backside structure for improving two-sided PERC cell backside efficiency according to claim 1, it is characterised in that：Institute
State on aluminium main grid (3) perforation offer it is several by unthreaded hole (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810728981.XA CN108922928B (en) | 2018-07-05 | 2018-07-05 | A kind of backside structure improving two-sided PERC cell backside efficiency |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810728981.XA CN108922928B (en) | 2018-07-05 | 2018-07-05 | A kind of backside structure improving two-sided PERC cell backside efficiency |
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| Publication Number | Publication Date |
|---|---|
| CN108922928A true CN108922928A (en) | 2018-11-30 |
| CN108922928B CN108922928B (en) | 2019-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810728981.XA Active CN108922928B (en) | 2018-07-05 | 2018-07-05 | A kind of backside structure improving two-sided PERC cell backside efficiency |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148641A (en) * | 2019-06-19 | 2019-08-20 | 晶科能源有限公司 | A kind of solar battery and preparation method thereof, a kind of photovoltaic module |
| CN116632118A (en) * | 2023-07-18 | 2023-08-22 | 英利能源发展有限公司 | Preparation method of photovoltaic module |
| CN117133815A (en) * | 2023-09-21 | 2023-11-28 | 安徽华晟新能源科技有限公司 | Solar cell, preparation method thereof and solar cell module |
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| US20120247529A1 (en) * | 2011-04-02 | 2012-10-04 | Csi Cells Co., Ltd | Solar cell modules and methods of manufacturing the same |
| CN203674233U (en) * | 2014-01-07 | 2014-06-25 | 蒙特集团（香港）有限公司 | Solar cell solder strip |
| JP2014143391A (en) * | 2013-01-24 | 2014-08-07 | Motech Industries Inc | Solar cell, solar cell module and manufacturing method of solar cell |
| WO2015083148A1 (en) * | 2013-12-04 | 2015-06-11 | Utilight Ltd. | Solar cell bus bars |
| CN206194768U (en) * | 2016-10-08 | 2017-05-24 | 苏州阿特斯阳光电力科技有限公司 | Two -sided PERC solar wafer back bars line knot constructs |
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2018
- 2018-07-05 CN CN201810728981.XA patent/CN108922928B/en active Active
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| US20120247529A1 (en) * | 2011-04-02 | 2012-10-04 | Csi Cells Co., Ltd | Solar cell modules and methods of manufacturing the same |
| CN202142542U (en) * | 2011-06-01 | 2012-02-08 | 上海超日太阳能科技股份有限公司 | X type positive electrode structure used for solar battery |
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| WO2015083148A1 (en) * | 2013-12-04 | 2015-06-11 | Utilight Ltd. | Solar cell bus bars |
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| CN206194768U (en) * | 2016-10-08 | 2017-05-24 | 苏州阿特斯阳光电力科技有限公司 | Two -sided PERC solar wafer back bars line knot constructs |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148641A (en) * | 2019-06-19 | 2019-08-20 | 晶科能源有限公司 | A kind of solar battery and preparation method thereof, a kind of photovoltaic module |
| CN116632118A (en) * | 2023-07-18 | 2023-08-22 | 英利能源发展有限公司 | Preparation method of photovoltaic module |
| CN116632118B (en) * | 2023-07-18 | 2023-09-26 | 英利能源发展有限公司 | Preparation method of photovoltaic module |
| CN117133815A (en) * | 2023-09-21 | 2023-11-28 | 安徽华晟新能源科技有限公司 | Solar cell, preparation method thereof and solar cell module |
| CN117133815B (en) * | 2023-09-21 | 2024-03-15 | 安徽华晟新能源科技有限公司 | Solar cell, preparation method thereof and solar cell module |
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| CN108922928B (en) | 2019-09-03 |
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