CN108922878B - Semiconductor power device for carrying out current sharing by adopting thermal phase change material - Google Patents
Semiconductor power device for carrying out current sharing by adopting thermal phase change material Download PDFInfo
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- CN108922878B CN108922878B CN201810728651.0A CN201810728651A CN108922878B CN 108922878 B CN108922878 B CN 108922878B CN 201810728651 A CN201810728651 A CN 201810728651A CN 108922878 B CN108922878 B CN 108922878B
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Abstract
The invention discloses a semiconductor power device for carrying out current sharing by adopting a thermal phase change material, which comprises a first electrode, a second electrode, a lower surface electrode and a device main body, wherein the device main body comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrodes, wherein the cathodes of the device unit cells are respectively connected with the second electrodes, the anodes of the device unit cells are respectively connected with the lower surface electrodes, the cathodes of one part of the device unit cells are connected with the second electrodes through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrodes through first leads, the lower surface electrode is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through a second lead, and the first lead and/or the second lead are thermal phase change material leads.
Description
Technical Field
The invention belongs to the technical field of semiconductor power devices, and particularly relates to a semiconductor power device for carrying out current sharing by adopting a thermal phase change material.
Background
The semiconductor power device comprises devices such as a power diode, a power triode, a thyristor, an IGBT (insulated gate bipolar transistor), a VDMOS (vertical double-diffused metal oxide semiconductor), and the like, is mainly used for converting and efficient application control of green energy in a power system and a power system of an electronic device, and is an important electronic component at present. The structure of the high-power device represented by a thyristor, a power triode, a VDMOS and an IGBT is formed by thousands of transistor unit cells, each unit cell is a basic device unit of the thyristor, the power triode, the VDMOS and the IGBT, and the thousands of device units are connected in parallel to work, so that the current conduction capability of hundreds of amperes can be provided.
In practical application, the most critical problem of a semiconductor power device is thermal reliability, a typical device failure mechanism is thermal failure, specifically, when a large current (having a large current density) passes through a local part of the device, local overheating can be caused, such a local hot spot can cause further concentration of the current to the local part, and finally, as a result of continuous positive cycle feedback, the structure of the device near the hot spot is broken down, which can cause permanent damage to the semiconductor power device; in particular, since such devices are often used in power systems, such device level damage is often expanded to the system level, which leads to the occurrence of severe accidents and disasters such as short circuit and fire, and therefore, it is very promising to develop a semiconductor power device that effectively avoids thermal failure.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a semiconductor power device for carrying out current equalization by adopting a thermal phase change material, and solves the problem of thermal failure of the semiconductor power device in the prior art.
In order to solve the technical problem, the technical scheme of the invention is as follows: the utility model provides an adopt hot phase change material to carry out semiconductor power device that flow equalizes, includes upper surface electrode, device main part and lower surface electrode, wherein the device main part sets up in upper surface electrode and lower surface electrode intermediate position to upper surface electrode and lower surface electrode switch on, the upper surface electrode includes first electrode and second electrode, and wherein the second electrode includes a plurality of device unit cells, partly device unit cell passes through metal lead with first electrode and is connected, and wherein another part device unit cell passes through first lead wire with first electrode and is connected, the lower surface electrode includes two parts metal electrode, and wherein two parts metal electrode passes through the second lead wire and connects, first lead wire and/or second lead wire are hot phase change material lead wire.
Preferably, the first electrode is arranged in a central area of the upper surface, the second electrode is arranged in a peripheral area of the upper surface, the second electrode comprises an inner ring area device unit cell close to the first electrode and an outer ring area device unit cell far away from the first electrode, each inner ring area device unit cell is connected with the first electrode through a thermal phase change material lead, and each outer ring area device unit cell is connected with the first electrode through a metal lead.
Preferably, the proportion of the outer ring area device unit cells in the total device unit cells is more than or equal to 30%, wherein the trigger end of each outer ring area device unit cell is connected with the first electrode through a metal lead.
Preferably, the proportion of the inner ring area device unit cells in the total device unit cells is more than or equal to 5%, wherein the trigger end of each inner ring area device unit cell is connected with the first electrode through a thermal phase change material lead.
Preferably, the lower surface electrode includes a lower surface first metal electrode and a lower surface second metal electrode, wherein the lower surface first metal electrode is disposed in a lower surface central region, the lower surface second metal electrode is disposed in a lower surface peripheral region, the lower surface first metal electrode and the lower surface second metal electrode are connected by a thermal phase change material lead, and any one of the lower surface first metal electrode and the lower surface second metal electrode is conducted with the upper surface electrode.
Preferably, the lower surface first metal electrode is conducted with the upper surface electrode, wherein the area of the lower surface first metal electrode is larger than or equal to the area of the lower surface second metal electrode.
Preferably, the lower surface second metal electrode is electrically connected to the upper surface electrode, wherein the area of the lower surface second metal electrode is larger than or equal to the area of the lower surface first metal electrode.
Preferably, the thermal phase change material lead is made of vanadium oxide or vanadium dioxide, wherein the thermal phase change temperature range of the thermal phase change material is 50-300 ℃.
Preferably, the thermal phase-change material lead starts to be converted into a conductor when the temperature is higher than or equal to 50 ℃, and the thermal phase-change material lead is in an insulated state when the temperature is lower than 50 ℃.
Compared with the prior art, the invention has the advantages that:
(1) in order to improve the thermal reliability of a semiconductor power device, a backup conductive area (comprising an inner ring area device unit cell, a lower surface first metal electrode or a lower surface second metal electrode) is arranged, whether the backup conductive area participates in conducting current is determined by the temperature of the device during working, and a conversion mechanism of the backup conductive area during working is realized at a specific temperature, namely, a thermal phase change material lead is adopted in the device structure, and the thermal phase change material lead can generate phase change from an insulator to a good metal conductor at a certain temperature, so that the working state of the device can be automatically controlled;
(2) the invention can self-adaptively adjust the backup conductive area according to the specific situation in practical application, determine the specific distribution of different areas on the whole device area according to the principle of equalizing the conduction current as much as possible, thereby optimizing the current circulation path no matter the device works under the large current condition or the small current condition, improving the thermal reliability of the device during working and prolonging the service life of the device.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the structure of the upper surface of the present invention;
FIG. 3 is a schematic view of the lower surface of the present invention.
Description of reference numerals:
1-a first electrode, 2-a second electrode, 3-a lower surface electrode, 4-a device main body, 5-an inner circle region device unit cell, 6-an outer circle region device unit cell, 7-a lower surface first metal electrode and 8-a lower surface second metal electrode.
Detailed Description
The following description of the embodiments of the present invention refers to the accompanying drawings and examples:
it should be noted that the structures, proportions, sizes, and other dimensions shown in the drawings and described in the specification are only for the purpose of understanding and reading the present disclosure, and are not intended to limit the scope of the present disclosure, which is defined by the following claims, and any modifications of the structures, changes in the proportions and adjustments of the sizes, without affecting the efficacy and attainment of the same, are intended to fall within the scope of the present disclosure.
In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
Example 1
As shown in figures 1-3, the invention discloses a semiconductor power device using thermal phase change material for current sharing, which comprises a first electrode 1, a second electrode 2, a lower surface electrode 3 and a device main body 4, wherein the device main body 4 comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrode 1, the cathodes of the device unit cells are respectively connected with the second electrode 2, the anodes of the device unit cells are respectively connected with the lower surface electrode 3, the cathodes of one part of the device unit cells are connected with the second electrode 2 through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode 2 through first leads, the lower surface electrode 3 is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, the first lead and/or the second lead are thermal phase change material leads.
Example 2
As shown in figures 1-3, the invention discloses a semiconductor power device using thermal phase change material for current sharing, which comprises a first electrode 1, a second electrode 2, a lower surface electrode 3 and a device main body 4, wherein the device main body 4 comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrode 1, the cathodes of the device unit cells are respectively connected with the second electrode 2, the anodes of the device unit cells are respectively connected with the lower surface electrode 3, the cathodes of one part of the device unit cells are connected with the second electrode 2 through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode 2 through first leads, the lower surface electrode 3 is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, the first lead and/or the second lead are thermal phase change material leads.
As shown in fig. 1 to 3, preferably, the first electrode 1 is disposed in a central region of an upper surface of the device, the second electrode 2 is disposed in a peripheral region of the upper surface of the device, the second electrode 2 is connected to an inner ring region device unit cell 5 close to the first electrode 1 and an outer ring region device unit cell 6 far away from the first electrode 1, cathodes of the inner ring region device unit cells 5 are respectively connected to the second electrode 2 through thermal phase change material leads, and cathodes of the outer ring region device unit cells 6 are respectively connected to the second electrode 2 through metal leads.
Example 3
As shown in figures 1-3, the invention discloses a semiconductor power device using thermal phase change material for current sharing, which comprises a first electrode 1, a second electrode 2, a lower surface electrode 3 and a device main body 4, wherein the device main body 4 comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrode 1, the cathodes of the device unit cells are respectively connected with the second electrode 2, the anodes of the device unit cells are respectively connected with the lower surface electrode 3, the cathodes of one part of the device unit cells are connected with the second electrode 2 through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode 2 through first leads, the lower surface electrode 3 is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, the first lead and/or the second lead are thermal phase change material leads.
As shown in fig. 1 to 3, preferably, the first electrode 1 is disposed in a central region of an upper surface of the device, the second electrode 2 is disposed in a peripheral region of the upper surface of the device, the second electrode 2 is connected to an inner ring region device unit cell 5 close to the first electrode 1 and an outer ring region device unit cell 6 far away from the first electrode 1, cathodes of the inner ring region device unit cells 5 are respectively connected to the second electrode 2 through thermal phase change material leads, and cathodes of the outer ring region device unit cells 6 are respectively connected to the second electrode 2 through metal leads.
Preferably, the proportion of the outer ring area device unit cell 6 in the total device unit cell is more than or equal to 30%, wherein the cathode of each outer ring area device unit cell 6 is connected with the second electrode 2 through a metal lead.
Preferably, the proportion of the inner ring area device unit cell 5 in the total device unit cell is more than or equal to 5%, wherein the cathode of each inner ring area device unit cell 5 is connected with the second electrode 2 through a thermal phase change material lead.
Example 4
As shown in figures 1-3, the invention discloses a semiconductor power device using thermal phase change material for current sharing, which comprises a first electrode 1, a second electrode 2, a lower surface electrode 3 and a device main body 4, wherein the device main body 4 comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrode 1, the cathodes of the device unit cells are respectively connected with the second electrode 2, the anodes of the device unit cells are respectively connected with the lower surface electrode 3, the cathodes of one part of the device unit cells are connected with the second electrode 2 through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode 2 through first leads, the lower surface electrode 3 is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, the first lead and/or the second lead are thermal phase change material leads.
As shown in fig. 1 to 3, preferably, the first electrode 1 is disposed in a central region of an upper surface of the device, the second electrode 2 is disposed in a peripheral region of the upper surface of the device, the second electrode 2 is connected to an inner ring region device unit cell 5 close to the first electrode 1 and an outer ring region device unit cell 6 far away from the first electrode 1, cathodes of the inner ring region device unit cells 5 are respectively connected to the second electrode 2 through thermal phase change material leads, and cathodes of the outer ring region device unit cells 6 are respectively connected to the second electrode 2 through metal leads.
Preferably, the proportion of the outer ring area device unit cell 6 in the total device unit cell is more than or equal to 30%, wherein the cathode of each outer ring area device unit cell 6 is connected with the second electrode 2 through a metal lead.
Preferably, the proportion of the inner ring area device unit cell 5 in the total device unit cell is more than or equal to 5%, wherein the cathode of each inner ring area device unit cell 5 is connected with the second electrode 2 through a thermal phase change material lead.
As shown in fig. 1 to 3, preferably, the lower surface electrode 3 includes a lower surface first metal electrode 7 and a lower surface second metal electrode 8, wherein the lower surface first metal electrode 7 is disposed in a central region of the lower surface, the lower surface second metal electrode 8 is disposed in a peripheral region of the lower surface, the lower surface first metal electrode 7 and the lower surface second metal electrode 8 are connected by a thermal phase change material lead, and any one of the lower surface first metal electrode 7 and the lower surface second metal electrode 8 is conducted with an anode of each device unit cell.
Example 5
As shown in figures 1-3, the invention discloses a semiconductor power device using thermal phase change material for current sharing, which comprises a first electrode 1, a second electrode 2, a lower surface electrode 3 and a device main body 4, wherein the device main body 4 comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrode 1, the cathodes of the device unit cells are respectively connected with the second electrode 2, the anodes of the device unit cells are respectively connected with the lower surface electrode 3, the cathodes of one part of the device unit cells are connected with the second electrode 2 through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode 2 through first leads, the lower surface electrode 3 is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, the first lead and/or the second lead are thermal phase change material leads.
As shown in fig. 1 to 3, preferably, the first electrode 1 is disposed in a central region of an upper surface of the device, the second electrode 2 is disposed in a peripheral region of the upper surface of the device, the second electrode 2 is connected to an inner ring region device unit cell 5 close to the first electrode 1 and an outer ring region device unit cell 6 far away from the first electrode 1, cathodes of the inner ring region device unit cells 5 are respectively connected to the second electrode 2 through thermal phase change material leads, and cathodes of the outer ring region device unit cells 6 are respectively connected to the second electrode 2 through metal leads.
Preferably, the proportion of the outer ring area device unit cell 6 in the total device unit cell is more than or equal to 30%, wherein the cathode of each outer ring area device unit cell 6 is connected with the second electrode 2 through a metal lead.
Preferably, the proportion of the inner ring area device unit cell 5 in the total device unit cell is more than or equal to 5%, wherein the cathode of each inner ring area device unit cell 5 is connected with the second electrode 2 through a thermal phase change material lead.
As shown in fig. 1 to 3, preferably, the lower surface electrode 3 includes a lower surface first metal electrode 7 and a lower surface second metal electrode 8, wherein the lower surface first metal electrode 7 is disposed in a central region of the lower surface, the lower surface second metal electrode 8 is disposed in a peripheral region of the lower surface, the lower surface first metal electrode 7 and the lower surface second metal electrode 8 are connected by a thermal phase change material lead, and any one of the lower surface first metal electrode 7 and the lower surface second metal electrode 8 is conducted with an anode of each device unit cell.
Preferably, the lower surface first metal electrode 7 is conducted with an anode of the device unit cell, wherein the area of the lower surface first metal electrode 7 is larger than or equal to the area of the lower surface second metal electrode 8.
Preferably, the lower surface second metal electrode 8 is conducted with an anode of the device unit cell, wherein the area of the lower surface second metal electrode 7 is larger than or equal to the area of the lower surface first metal electrode 8.
Example 6
As shown in figures 1-3, the invention discloses a semiconductor power device using thermal phase change material for current sharing, which comprises a first electrode 1, a second electrode 2, a lower surface electrode 3 and a device main body 4, wherein the device main body 4 comprises a plurality of device unit cells, one end of each device unit cell is provided with a trigger electrode and a cathode, the other end of each device unit cell is provided with an anode, the trigger electrodes of the device unit cells are respectively connected with the first electrode 1, the cathodes of the device unit cells are respectively connected with the second electrode 2, the anodes of the device unit cells are respectively connected with the lower surface electrode 3, the cathodes of one part of the device unit cells are connected with the second electrode 2 through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode 2 through first leads, the lower surface electrode 3 is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, the first lead and/or the second lead are thermal phase change material leads.
As shown in fig. 1 to 3, preferably, the first electrode 1 is disposed in a central region of an upper surface of the device, the second electrode 2 is disposed in a peripheral region of the upper surface of the device, the second electrode 2 is connected to an inner ring region device unit cell 5 close to the first electrode 1 and an outer ring region device unit cell 6 far away from the first electrode 1, cathodes of the inner ring region device unit cells 5 are respectively connected to the second electrode 2 through thermal phase change material leads, and cathodes of the outer ring region device unit cells 6 are respectively connected to the second electrode 2 through metal leads.
Preferably, the proportion of the outer ring area device unit cell 6 in the total device unit cell is more than or equal to 30%, wherein the cathode of each outer ring area device unit cell 6 is connected with the second electrode 2 through a metal lead.
Preferably, the proportion of the inner ring area device unit cell 5 in the total device unit cell is more than or equal to 5%, wherein the cathode of each inner ring area device unit cell 5 is connected with the second electrode 2 through a thermal phase change material lead.
As shown in fig. 1 to 3, preferably, the lower surface electrode 3 includes a lower surface first metal electrode 7 and a lower surface second metal electrode 8, wherein the lower surface first metal electrode 7 is disposed in a central region of the lower surface, the lower surface second metal electrode 8 is disposed in a peripheral region of the lower surface, the lower surface first metal electrode 7 and the lower surface second metal electrode 8 are connected by a thermal phase change material lead, and any one of the lower surface first metal electrode 7 and the lower surface second metal electrode 8 is conducted with an anode of each device unit cell.
Preferably, the lower surface first metal electrode 7 is conducted with an anode of the device unit cell, wherein the area of the lower surface first metal electrode 7 is larger than or equal to the area of the lower surface second metal electrode 8.
Preferably, the lower surface second metal electrode 8 is conducted with an anode of the device unit cell, wherein the area of the lower surface second metal electrode 7 is larger than or equal to the area of the lower surface first metal electrode 8.
Preferably, the thermal phase change material lead is made of vanadium oxide or vanadium dioxide, wherein the thermal phase change temperature range of the thermal phase change material is 50-300 ℃.
Preferably, the thermal phase-change material lead starts to be converted into a conductor when the temperature is higher than or equal to 50 ℃, and the thermal phase-change material lead is in an insulated state when the temperature is lower than 50 ℃.
The thermal phase change material is a material which presents an insulating phase at low temperature and is non-conductive, can generate phase change at a certain temperature to become a metal phase and can conduct electricity well, and is insulating at room temperature by taking vanadium oxide and vanadium dioxide as examples; the material gradually undergoes a metallization phase change with the increase of the temperature; when the temperature is 80 ℃, the metallization rate is over 90 percent, and the conductive material becomes a good conductor.
In order to utilize the characteristic of the thermal phase-change material to pertinently improve the thermal reliability of the semiconductor power device, the invention directly connects a part of device unit cells with a first electrode (trigger electrode) by using a metal lead wire, the other part of the device unit cell is connected with a first electrode (trigger electrode) through a lead wire prepared by a thermal phase-change material, thus, when the temperature of the device is well controlled, only a part of the device unit cells which are uniformly distributed enter a working state, if the device conducting current capacity is not enough, the part of the device unit cell connected by the phase-change material will be put into operation to bear and divide the extra current part due to the temperature rise, thereby playing the role of equalizing the current and controlling the working temperature of the whole device, the thermal reliability of the semiconductor power device in application can be greatly improved, the safety of related electric equipment is enhanced, and the accident rate is reduced.
The working principle of the invention is as follows:
the semiconductor power device is exemplified by VDMOS and IGBT, but is not limited to these two devices; the thermal phase change material is exemplified by VO2 (vanadium oxide) (or VO2 doped with a very small amount of SiO2 as the thermal phase change material), but is not limited to such a thermal phase change material. Generally, a semiconductor power device is a bulk device and comprises a plurality of device unit cells, two electrodes are arranged on the upper surface of each device unit cell, one electrode is arranged on the lower surface of each device unit cell, and for a VDMOS device, the upper surface is a gate electrode (grid electrode) and a source electrode, and the lower surface is a drain electrode; for the IGBT, the upper surface is a trigger electrode and a cathode, the lower surface is an anode, the device main body is composed of thousands of device unit cells, the device unit cells are connected in parallel to work, when the device is started, the device can provide very large conducting current capacity, all the device unit cells of the device main body are divided into two parts, the cathode of one part of the device unit cell is directly connected with the second electrode through a metal lead, the device unit cell of the other part is connected with the second electrode through a thermal phase-change material lead, and the device works in two states:
(1) state of operation at lower current: at the moment, corresponding to the situation that the load outside the device is small, the temperature of the device is controlled to be in a low state, the thermal phase-change material lead wire in the device is mainly in an insulation phase, only the part of device unit cells connected with the metal lead wire are in a normal working state, the device unit cells connected with the thermal phase-change material lead wire are used as a backup conductive area, and the device is not put into work at the moment;
(2) state of operation at higher current: at the moment, the load of the device is very large, the temperature of the device is continuously increased along with the driving of the device to a large load, so that the lead wire of the thermal phase-change material is also transformed to a metal phase, and after the temperature reaches a certain temperature, the lead wire of the thermal phase-change material is completely metalized, so that backup conductive areas connected by the lead wire of the thermal phase-change material are effectively triggered as a device unit cell connected with the metal lead wire and enter a normal working state, a wider current path is provided, and the current conducting capacity is stronger;
the first electrode is positioned in the center of the upper surface of the device, the device unit cell connected with the thermal phase change material lead surrounds the first electrode, and the device unit cell does not work when the temperature is lower; the peripheral device unit cells are connected by the metal lead wires and can always work at ordinary times, the invention applies the characteristic that the peripheral heat dissipation of the device is superior to the heat dissipation of the central part, if the device unit cells close to the first electrode are put into work, because the heat dissipation needs certain time and process, the device unit cells put into work later can ensure the work for certain time, and if the temperature is actually reduced later, the device unit cells can be switched into a backup dormancy mode, namely a backup conductive area is formed.
The invention also divides the lower surface electrode into two metal electrodes which are connected by a thermal phase-change material lead, the anode of each device unit cell is only directly connected with one of the metal electrodes, only one of the metal electrodes on the lower surface is effectively conductive when the device works at ordinary times, and the current path is limited to a certain extent; when the temperature of the device is increased, all the electrode areas on the lower surface can be used for conducting current, the current path is wider, and the heat dissipation property of the lower surface is better due to the metallization of the thermal phase change material.
The invention adopts the thermal phase-change material, and can adaptively determine whether a small amount or a great amount of device unit cells enter a working state according to the conditions of load and current circulation in the working process; the semiconductor power device adopting the mechanism and the material can avoid the concentration of large current and large heat at a certain part, and greatly improve the application reliability of the device.
Although the preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.
Many other changes and modifications can be made without departing from the spirit and scope of the invention. It is to be understood that the invention is not to be limited to the specific embodiments, but only by the scope of the appended claims.
Claims (9)
1. A semiconductor power device using thermal phase change material for current sharing is characterized in that: the device comprises a first electrode, a second electrode, a lower surface electrode and a device main body, wherein the device main body comprises a plurality of device unit cells, one ends of the device unit cells are provided with trigger electrodes and cathodes, the other ends of the device unit cells are provided with anodes, the trigger electrodes of the device unit cells are respectively connected with the first electrode, the cathodes of the device unit cells are respectively connected with the second electrode, the anodes of the device unit cells are respectively connected with the lower surface electrode, the cathodes of one part of the device unit cells are connected with the second electrode through metal leads, the cathodes of the other part of the device unit cells are connected with the second electrode through first leads, the lower surface electrode is divided into two parts of metal electrodes, the two parts of metal electrodes are connected through second leads, and the first leads and/or the second leads are thermal phase change material leads.
2. The semiconductor power device for current sharing using thermal phase change material according to claim 1, wherein: the first electrode is arranged in the central area of the upper surface of the device, the second electrode is arranged in the peripheral area of the upper surface of the device, the second electrode is connected with the inner ring area device unit cell close to the first electrode and the outer ring area device unit cell far away from the first electrode, the cathode of each inner ring area device unit cell is respectively connected with the second electrode through a thermal phase change material lead, and the cathode of each outer ring area device unit cell is respectively connected with the second electrode through a metal lead.
3. The semiconductor power device for current sharing using thermal phase change material according to claim 2, wherein: the proportion of the outer ring area device unit cells to the total device unit cells is more than or equal to 30%, wherein the cathodes of the outer ring area device unit cells are connected with the second electrode through metal leads.
4. The semiconductor power device for current sharing using thermal phase change material according to claim 2, wherein: the proportion of the inner ring area device unit cells to the total device unit cells is more than or equal to 5%, wherein the cathode of each inner ring area device unit cell is connected with the second electrode through a thermal phase change material lead.
5. The semiconductor power device for current sharing using thermal phase change material according to claim 1, wherein: the lower surface electrode comprises a lower surface first metal electrode and a lower surface second metal electrode, wherein the lower surface first metal electrode is arranged in the central area of the lower surface, the lower surface second metal electrode is arranged in the peripheral area of the lower surface, the lower surface first metal electrode and the lower surface second metal electrode are connected through a thermal phase change material lead, and any one of the lower surface first metal electrode and the lower surface second metal electrode is conducted with the anode of each device unit cell.
6. The semiconductor power device for current sharing using thermal phase change material according to claim 5, wherein: the first metal electrode on the lower surface is communicated with the anode of the device unit cell, wherein the area of the first metal electrode on the lower surface is larger than or equal to that of the second metal electrode on the lower surface.
7. The semiconductor power device for current sharing using thermal phase change material according to claim 5, wherein: and the second metal electrode on the lower surface is communicated with the anode of the device unit cell, wherein the area of the second metal electrode on the lower surface is larger than or equal to that of the first metal electrode on the lower surface.
8. The semiconductor power device for current sharing using thermal phase change material according to any one of claims 1 to 7, wherein: the thermal phase change material lead is made of vanadium oxide or vanadium dioxide, wherein the thermal phase change temperature range of the thermal phase change material is 50-300 ℃.
9. The semiconductor power device for current sharing using thermal phase change material according to claim 8, wherein: when the temperature is higher than or equal to 50 ℃, the thermal phase-change material lead starts to be converted into a conductor, and when the temperature is lower than 50 ℃, the thermal phase-change material lead is in an insulating state.
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