CN108922864A - The restorative procedure of the disk damage of electrostatic chuck - Google Patents
The restorative procedure of the disk damage of electrostatic chuck Download PDFInfo
- Publication number
- CN108922864A CN108922864A CN201810811305.9A CN201810811305A CN108922864A CN 108922864 A CN108922864 A CN 108922864A CN 201810811305 A CN201810811305 A CN 201810811305A CN 108922864 A CN108922864 A CN 108922864A
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- Prior art keywords
- electrostatic chuck
- disk
- repaired
- disk structure
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
A kind of restorative procedure of the disk damage of electrostatic chuck, the method includes：Electrostatic chuck to be repaired is provided, the disk structure of the electrostatic chuck to be repaired is dismountable；Using the first ion implantation technology, ion implanting is carried out to the disk structure of the electrostatic chuck to be repaired；Wherein, the Doped ions for carrying out ion implanting are identical as the element of surfacing of disk structure of the electrostatic chuck to be repaired.The present invention program can supplement the surface material layer of the disk structure of electrostatic chuck to be repaired, so that the disk damage to the disk structure is repaired.
Description
Technical field
The present invention relates to the reparation sides that technical field of manufacturing semiconductors more particularly to a kind of disk of electrostatic chuck are damaged
Method.
Background technique
It in multiple techniques of semiconductors manufacture, is required to for wafer being fixed on electrostatic chuck, to carry out the wafer
Working process and transmission.
In the prior art, electrostatic chuck (Electrostatic Chuck, ESC) device generally include disk structure with
And it is used to support the support construction of the disk structure.Wherein, the surfacing of the disk structure generallys use carbon-coating, the table
The lower layer of material of plane materiel material generallys use rubber material.
In the transmission process of wafer, lasting actuation (Load) is needed in order to keep stability, between wafer and sucker
And separation (Unload).
However, in the fabrication process, it inevitably will appear carbon layer on surface and be contaminated or damaged situation, be easy to lead
It causes wafer to shift or even fall in transmission process, and then influences production capacity.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of restorative procedures of the disk of electrostatic chuck damage, can be to be repaired
The surface material layer of the disk structure of multiple electrostatic chuck is supplemented, so that the disk damage to the disk structure is repaired.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of restorative procedure of the disk damage of electrostatic chuck,
Including：Electrostatic chuck to be repaired is provided, the disk structure of the electrostatic chuck to be repaired is dismountable；It is infused using the first ion
Enter technique, carries out ion implanting to the disk structure of the electrostatic chuck to be repaired；Wherein, the doping for carrying out ion implanting
Ion is identical as the element of surfacing of disk structure of the electrostatic chuck to be repaired.
Optionally, carrying out ion implanting to the disk structure of the electrostatic chuck to be repaired includes：Inject ions into equipment
The disk structure of interior electrostatic chuck replaces with the disk structure of the electrostatic chuck to be repaired；The case where not being placed with wafer
Under, ion implanting is carried out using disk structure of the ion implantation device to the electrostatic chuck to be repaired.
Optionally, the Doped ions for carrying out ion implanting are carbon ion, the disk knot of the electrostatic chuck to be repaired
The surfacing of structure is carbon；The technological parameter of first ion implantation technology includes：Reaction gas is carbonaceous gas.
Optionally, the reaction gas is selected from：CO2And CO.
Optionally, the technological parameter of first ion implantation technology further includes：Implantation Energy is 6KeV to 15KeV；Note
Entering dosage is 2E15atom/cm2To 1E16atom/cm2。
Optionally, the first ion implantation technology is being used, is carrying out ion to the disk structure of the electrostatic chuck to be repaired
Before injection, the restorative procedure of the disk damage of the electrostatic chuck further includes：Using the second ion implantation technology, to it is described to
The disk structure for repairing electrostatic chuck carries out ion implanting.
Optionally, the technological parameter of second ion implantation technology includes：Reaction gas is inert gas.
Optionally, the reaction gas is selected from：Helium, neon and argon gas.
Optionally, the technological parameter of second ion implantation technology further includes：Implantation Energy is 2KeV to 5KeV；Injection
Dosage is 2E15atom/cm2To 1E16atom/cm2。
Optionally, the technological parameter of second ion implantation technology further includes：A length of 2 minutes to 3 minutes when injection.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In embodiments of the present invention, electrostatic chuck to be repaired is provided, the disk structure of the electrostatic chuck to be repaired is can
Disassembly；Using the first ion implantation technology, ion implanting is carried out to the disk structure of the electrostatic chuck to be repaired；Wherein,
The Doped ions for carrying out ion implanting are identical as the element of surfacing of disk structure of the electrostatic chuck to be repaired.
It using the above scheme, can be to electrostatic chuck to be repaired by carrying out ion implanting to the disk structure of electrostatic chuck to be repaired
The surface material layer of disk structure supplemented, so that the disk damage to the disk structure is repaired.
Further, it by replacing the disk structure of electrostatic chuck to be repaired to ion implantation device, and then is not putting
In the case where being equipped with wafer, ion note is carried out using disk structure of the ion implantation device to the electrostatic chuck to be repaired
Enter, the surfacing of the disk structure of the electrostatic chuck of nonionic injection device can be supplemented, thus to the disk knot
The disk damage of structure is repaired.
Further, before carrying out ion implanting to the disk structure of the electrostatic chuck to be repaired, second can also be used
Ion implantation technology carries out ion implanting to the disk structure of the electrostatic chuck to be repaired, to realize to electrostatic to be repaired
The surface of the disk structure of sucker is cleaned, and by being multiplexed ion implantation technology, the surface for helping to improve disk structure is clear
Cleanliness further increases repairing effect.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of electrostatic chuck in the prior art；
Fig. 2 is a kind of flow chart of the restorative procedure of the disk damage of electrostatic chuck in the embodiment of the present invention；
Fig. 3 to Fig. 4 is that each step is corresponding in a kind of restorative procedure of the disk damage of electrostatic chuck in the embodiment of the present invention
Electrostatic chuck the schematic diagram of the section structure.
Specific embodiment
It in multiple techniques of semiconductors manufacture, is required to for wafer being fixed on electrostatic chuck, to carry out the wafer
Working process and transmission.However, being easy to happen the problem of wafer is shifted or even fallen in transmission process, and then influence production capacity.
Referring to Fig.1, Fig. 1 is a kind of the schematic diagram of the section structure of electrostatic chuck in the prior art.The electrostatic chuck can be with
Including pedestal 100 and disk structure 110.
Wherein, the pedestal 100 is used to support the disk structure 110, and wafer 120 can be placed in the disk structure
110 surface.
Wherein, the disk structure 110 may include surface material layer 111 and remaining material layer 112.
Specifically, the material of the surface material layer 111 is usually carbon (Carbon), and the of remaining material layer 112
The lower layer of material of layer of material namely the surface material layer 111 generallys use rubber material.
The present inventor has found after study, in the prior art, it may appear that surface material layer 111 be contaminated or
Damaged situation, and in the transmission process of wafer 120, in order to keep stability, need to hold between wafer 120 and electrostatic chuck
Continuous actuation and separation is easy to cause wafer 120 to shift or even fall in transmission process.In existing recovery technique, need
Electrostatic chuck is dismantled and reprocessed, expend a large amount of manpower and material resources.And then since most electrostatic chucks are placed in vacuum ring
In border, it is also necessary to additionally be shut down, the operation of vacuum breaker, cause rehabilitation cost higher.
Specifically, the wafer 120 that may result in Polluted area is sent out if the surface material layer 111 is contaminated
It is raw to tilt, and then be easy to fall；If breakage occurs for the surface material layer 111, wafer 120 and damaged area may result in
The contact of remaining material layer 112, or even stick.It is especially rubber material in the first layer material of remaining material layer 112
When material, it is easier to be displaced due to sticking.
In embodiments of the present invention, electrostatic chuck to be repaired is provided, the disk structure of the electrostatic chuck to be repaired is can
Disassembly；Using the first ion implantation technology, ion implanting is carried out to the disk structure of the electrostatic chuck to be repaired；Wherein,
The Doped ions for carrying out ion implanting are identical as the element of surfacing of disk structure of the electrostatic chuck to be repaired.
It using the above scheme, can be to electrostatic chuck to be repaired by carrying out ion implanting to the disk structure of electrostatic chuck to be repaired
The surface material layer of disk structure supplemented, so that the disk damage to the disk structure is repaired.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
It is a kind of flow chart of the restorative procedure of the disk damage of electrostatic chuck in the embodiment of the present invention referring to Fig. 2, Fig. 2.
The restorative procedure of the disk damage of the electrostatic chuck may include step S21 to step S22：
Step S21：Electrostatic chuck to be repaired is provided, the disk structure of the electrostatic chuck to be repaired is dismountable；
Step S22：Using the first ion implantation technology, ion note is carried out to the disk structure of the electrostatic chuck to be repaired
Enter, wherein the surfacing of the disk structure of the Doped ions for carrying out ion implanting and the electrostatic chuck to be repaired
Element is identical.
Above-mentioned each step is illustrated below with reference to Fig. 3 to Fig. 4.
Fig. 3 to Fig. 4 is that each step is corresponding in a kind of restorative procedure of the disk damage of electrostatic chuck in the embodiment of the present invention
Electrostatic chuck the schematic diagram of the section structure.
Referring to Fig. 3, electrostatic chuck to be repaired is provided, the disk structure 210 of the electrostatic chuck to be repaired is dismountable.
Specifically, the electrostatic chuck can be located in the chamber 240 of ion implantation device, and the electrostatic chuck can wrap
Include pedestal 200 and disk structure 210.
Wherein, the pedestal 200 can be used for supporting the disk structure 210.
Wherein, the disk structure 210 may include surface material layer 211 and remaining material layer 212.
Specifically, the material of the surface material layer 211 is usually carbon, the first layer material of remaining material layer 212,
Namely the lower layer of material of the surface material layer 211 generallys use rubber material.
More specifically, in a kind of concrete application of the embodiment of the present invention, electrostatic chuck may include eight layers of structure, first
Layer is the good carbon material layer of thermal conductivity, and thickness is about 50nm；The second layer is layer of elastomer material, for example, rubber material layer, thick
About 7.5 μm of degree；Third layer is N adhesion layer (N adhesion layer), and thickness is about 200nm；4th layer exhausted for aluminium oxide
Edge layer (Alumina Dielectric layer)；Layer 5 is nickel electrode layer (Nickel Electrode layer)；6th
Layer is alumina insulating layer (Alumina Insulator layer)；Layer 7 is thermally conductive epoxy base resin layer
(Thermally conductive Epoxy)；8th layer is water-cooled aluminum base layer (Aluminum water-cooled base
layer)。
It should be pointed out that in embodiments of the present invention, with the surface material layer 211 (i.e. first layer) of electrostatic chuck for carbon
Material layer, the second layer is are described for layer of elastomer material, however the specific structure and every layer material to electrostatic chuck are equal
With no restriction.The surface material layer 211 of the electrostatic chuck can also be the good material of other thermal conductivity, and the second layer can also be
Other materials.
In embodiments of the present invention, the disk structure 210 of the setting electrostatic chuck to be repaired is dismountable, is facilitated
When electrostatic chuck to be repaired is not the electrostatic chuck in ion implantation device, the disk of disassembly electrostatic chuck to be repaired can be passed through
The disk structure 210 of the electrostatic chuck to be repaired is put into ion implantation device by face structure 210, thus to more electrostatic
Sucker is repaired.
Specifically, the disk structure for the electrostatic chuck that can be injected ions into equipment replaces with the electrostatic to be repaired and inhales
The disk structure 210 of disk；In the case where not being placed with wafer, the electrostatic to be repaired is inhaled using the ion implantation device
The disk structure 210 of disk carries out ion implanting.Alternatively, if the electrostatic chuck to be repaired is exactly that ion implantation device itself wraps
The electrostatic chuck contained, then ion implanting can be carried out to the electrostatic chuck to be repaired directly in the ion implantation device,
To complete to repair.
Further, using the second ion implantation technology 231, to the electrostatic chuck to be repaired disk structure 210 into
Row ion implanting is cleaned with the disk structure 210 to the electrostatic chuck to be repaired.
Specifically, the technological parameter of second ion implantation technology 231 may include：Reaction gas is inert gas.
More specifically, the reaction gas can be selected from：Helium (He), neon (Ne) and argon gas (Ar).
Wherein, the helium chemical property torpescence, under usual state not in conjunction with other elements or compound, and He points
Son measures smaller (4.003)；Neon is colourless, tasteless, non-flammable rare gas, and the molecular weight of Ne is 20.1797；Argon gas is colourless
Odorless inert gas, and the molecular weight of Ar is larger (39.95).
Preferably, reaction gas, which can be set, can obtain biggish cleaning force since the molecular weight of Ar is larger for argon gas
Degree, helps to improve the cleaning effect of the disk structure 210 to the electrostatic chuck to be repaired.
In embodiments of the present invention, the second ion implantation technology 231 can be used, to the disk of the electrostatic chuck to be repaired
Face structure 210 carries out ion implanting, cleans to realize to the surface of the disk structure 210 of electrostatic chuck to be repaired, leads to
Multiplexing ion implantation technology is crossed, the surface cleanness of the disk structure 210 of electrostatic chuck is helped to improve, further increases reparation
Effect.
Further, the technological parameter of second ion implantation technology 231 can also include：Implantation Energy be 2KeV extremely
5KeV；Implantation dosage is 2E15atom/cm2To 1E16atom/cm2。
It should be pointed out that the Implantation Energy should not be too low, otherwise to the surface of the disk structure of electrostatic chuck 210
It is inadequate to carry out clean dynamics, is easy to cause cleaning unclean；The Implantation Energy should not be too low, otherwise to electrostatic chuck
The surface clean dynamics of progress of disk structure 210 is excessively high, is easy to cause and generates injury to the disk structure 210 of electrostatic chuck.
As a unrestricted example, it is 2KeV to 5KeV, preferably 3KeV that Implantation Energy, which can be set,.
It should be pointed out that the implantation dosage should not be too small, otherwise to the surface of the disk structure of electrostatic chuck 210
It is inadequate to carry out clean dosage, is easy to cause cleaning unclean；The implantation dosage should not be excessive, otherwise to electrostatic chuck
The surface clean dosage of progress of disk structure 210 is excessive, is easy to cause increased costs.
As a unrestricted example, it is 2E15atom/cm that implantation dosage, which can be set,2To 1E16atom/cm2, excellent
It is selected as 5E15atom/cm2。
Further, the technological parameter of second ion implantation technology 231 can also include：A length of 2 minutes when injection
To 3 minutes.
It should be pointed out that the injection duration should not be too short, otherwise to the surface of the disk structure of electrostatic chuck 210
It is inadequate to carry out clean duration, is easy to cause cleaning unclean；The injection duration should not be too long, otherwise to electrostatic chuck
The surface clean duration of progress of disk structure 210 is too long, is easy to cause increased costs.
As a unrestricted example, a length of 2 minutes to 3 minutes, preferably 2.5 minutes when injection can be set.
It is carried out using the first ion implantation technology 232 to the disk structure 210 of the electrostatic chuck to be repaired referring to Fig. 4
Ion implanting supplements the disk structure 210 of electrostatic chuck to be repaired, to obtain surface material layer 213.
Wherein, the table of the disk structure 210 of the Doped ions for carrying out ion implanting and the electrostatic chuck to be repaired
The element of plane materiel material is identical.
Specifically, the Doped ions for carrying out ion implanting can be carbon ion, the disk of the electrostatic chuck to be repaired
The surfacing of face structure 210 can be carbon；The technological parameter of first ion implantation technology 232 may include：Reaction gas
Body is carbonaceous gas.
In embodiments of the present invention, it is carbonaceous gas by the way that the reaction gas is arranged, the first ion implanting can be made
The ion that technique 232 is injected to the disk structure 210 of the electrostatic chuck to be repaired is carbon ion, to realize to surfacing
The supplement of layer 213.
Further, the reaction gas can be selected from：CO2And CO.
It in embodiments of the present invention, is CO by the way that the reaction gas is arranged2And CO, it can be infused using the first ion
Enter technique 232 to the disk structure 210 of the electrostatic chuck to be repaired carry out ion implanting when, avoid other in reaction gas
The influence of element improves the supplementary result to surface material layer 213.
Further, the technological parameter of first ion implantation technology 232 can also include：Implantation Energy be 6KeV extremely
15KeV；Implantation dosage is 2E15atom/cm2To 1E16atom/cm2。
It should be pointed out that the Implantation Energy should not be too low, otherwise to the surface of the disk structure of electrostatic chuck 210
The dynamics supplemented is inadequate, is easy to cause supplement imperfect；The Implantation Energy should not be too low, otherwise to electrostatic chuck
The dynamics that the surface of disk structure 210 is supplemented is excessively high, is easy to cause and generates injury to the disk structure 210 of electrostatic chuck.
As a unrestricted example, it is 6KeV to 15KeV, preferably 10KeV that Implantation Energy, which can be set,.
It should be pointed out that the implantation dosage should not be too small, otherwise to the surface of the disk structure of electrostatic chuck 210
The dosage supplemented is inadequate, is easy to cause supplement imperfect；The implantation dosage should not be excessive, otherwise to electrostatic chuck
The dosage that the surface of disk structure 210 is supplemented is excessive, is easy to cause the thickness of the surface material layer 213 blocked up, reduces
Adsorption effect, and increased costs.
As a unrestricted example, it is 2E15atom/cm that implantation dosage, which can be set,2To 1E16atom/cm2, excellent
It is selected as 5E15atom/cm2。
Further, the injection duration of first ion implantation technology 232 should not be too short, otherwise to electrostatic chuck
The duration that the surface of disk structure 210 is supplemented is inadequate, is easy to cause supplement imperfect；The injection duration should not mistake
Length, it is otherwise too long to the duration that the surface of the disk structure of electrostatic chuck 210 is supplemented, it is easy to cause the surface material layer
213 thickness is blocked up, reduces adsorption effect, and increased costs.
In specific implementation, institute can be determined according to the extent of deterioration of the disk structure 210 of the electrostatic chuck to be repaired
State the injection duration of the first ion implantation technology 232.
In embodiments of the present invention, it by carrying out ion implanting to the disk structure of electrostatic chuck to be repaired, can treat
The surface material layer for repairing the disk structure of electrostatic chuck is supplemented, so that the disk damage to the disk structure is repaired
It is multiple.
Further, may include to the step of disk structure 210 of the electrostatic chuck to be repaired progress ion implanting：
The disk structure of the electrostatic chuck injected ions into equipment replaces with the disk structure 210 of the electrostatic chuck to be repaired；?
In the case where not being placed with wafer, using the ion implantation device to the disk structure 210 of the electrostatic chuck to be repaired into
Row ion implanting.
In embodiments of the present invention, can surfacing to the disk structure of the electrostatic chuck of nonionic injection device into
Row supplement, so that the disk damage to the disk structure is repaired.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. the restorative procedure that a kind of disk of electrostatic chuck is damaged, which is characterized in that including：
Electrostatic chuck to be repaired is provided, the disk structure of the electrostatic chuck to be repaired is dismountable；
Using the first ion implantation technology, ion implanting is carried out to the disk structure of the electrostatic chuck to be repaired；
Wherein, the Doped ions for carrying out ion implanting and the surfacing of the disk structure of the electrostatic chuck to be repaired
Element is identical.
2. the restorative procedure that the disk of electrostatic chuck according to claim 1 is damaged, which is characterized in that described to be repaired
The disk structure of electrostatic chuck carries out ion implanting：
The disk structure of the electrostatic chuck injected ions into equipment replaces with the disk structure of the electrostatic chuck to be repaired；
In the case where not being placed with wafer, using the ion implantation device to the disk structure of the electrostatic chuck to be repaired
Carry out ion implanting.
3. the restorative procedure that the disk of electrostatic chuck according to claim 1 is damaged, which is characterized in that the carry out ion
The Doped ions of injection are carbon ion, and the surfacing of the disk structure of the electrostatic chuck to be repaired is carbon；
The technological parameter of first ion implantation technology includes：
Reaction gas is carbonaceous gas.
4. the restorative procedure that the disk of electrostatic chuck according to claim 3 is damaged, which is characterized in that the reaction gas
It is selected from：CO2And CO.
5. the restorative procedure that the disk of electrostatic chuck according to claim 1 is damaged, which is characterized in that first ion
The technological parameter of injection technology further includes：
Implantation Energy is 6KeV to 15KeV；
Implantation dosage is 2E15atom/cm2To 1E16atom/cm2。
6. the restorative procedure that the disk of electrostatic chuck according to claim 1 is damaged, which is characterized in that using first from
Sub- injection technology, to the disk structure of the electrostatic chuck to be repaired carry out ion implanting before, further include：
Using the second ion implantation technology, ion implanting is carried out to the disk structure of the electrostatic chuck to be repaired.
7. the restorative procedure that the disk of electrostatic chuck according to claim 6 is damaged, which is characterized in that second ion
The technological parameter of injection technology includes：
Reaction gas is inert gas.
8. the restorative procedure that the disk of electrostatic chuck according to claim 7 is damaged, which is characterized in that the reaction gas
It is selected from：Helium, neon and argon gas.
9. the restorative procedure that the disk of electrostatic chuck according to claim 6 is damaged, which is characterized in that second ion
The technological parameter of injection technology further includes：
Implantation Energy is 2KeV to 5KeV；
Implantation dosage is 2E15atom/cm2To 1E16atom/cm2。
10. the restorative procedure that the disk of electrostatic chuck according to claim 9 is damaged, which is characterized in that described second from
The technological parameter of sub- injection technology further includes：
A length of 2 minutes to 3 minutes when injection.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810811305.9A CN108922864A (en) | 2018-07-23 | 2018-07-23 | The restorative procedure of the disk damage of electrostatic chuck |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810811305.9A CN108922864A (en) | 2018-07-23 | 2018-07-23 | The restorative procedure of the disk damage of electrostatic chuck |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110596A (en) * | 2010-12-17 | 2011-06-29 | 无锡华润上华半导体有限公司 | Method for reducing wafer drop |
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2018
- 2018-07-23 CN CN201810811305.9A patent/CN108922864A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110596A (en) * | 2010-12-17 | 2011-06-29 | 无锡华润上华半导体有限公司 | Method for reducing wafer drop |
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Application publication date: 20181130 |