CN108912695A - A kind of novel high dielectric property electronic material and preparation method thereof - Google Patents
A kind of novel high dielectric property electronic material and preparation method thereof Download PDFInfo
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- CN108912695A CN108912695A CN201810470939.2A CN201810470939A CN108912695A CN 108912695 A CN108912695 A CN 108912695A CN 201810470939 A CN201810470939 A CN 201810470939A CN 108912695 A CN108912695 A CN 108912695A
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L87/00—Compositions of unspecified macromolecular compounds, obtained otherwise than by polymerisation reactions only involving unsaturated carbon-to-carbon bonds
- C08L87/005—Block or graft polymers not provided for in groups C08L1/00 - C08L85/04
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- C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
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Abstract
The present invention provides a kind of novel high dielectric property electronic materials and preparation method thereof, are applied in combination by fullerene derivate, cyanate chlorobenzene, permanganic anhydride, can obtain excellent in mechanical performance, the polymer body of Good Heat-resistance；Be conducive to condensate polymerization by the way that diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino dimethylene benzene is added；The crosslinking points of hollow glass micropearl, stabilizer being added in increase system solidification process, obtain interpenetrating polymer structure, guarantee the intensity of high-frequency electronic dielectric material；Compatibility is good between each component of the present invention, and the material of excellent dielectric properties has thus been prepared, and has good mechanical property, heat resistance, especially has excellent dielectric properties, meet the substrate development and application of printed circuit board.
Description
Technical field
The invention belongs to novel electron technical field of composite materials, and in particular, to a kind of novel high dielectric property electronics material
Material and preparation method thereof.
Background technique
As electronic product develops to light, thin, small, high density, multifunction, element packing density and integrated level are increasingly
Height, transmitting signal frequency is higher and higher, and the route interlamellar spacing for playing transmitting signal function is smaller and smaller, and line width is more and more narrow, this is right
More stringent requirements are proposed for base electronic material, predominantly high-fire resistance, excellent dielectric properties, high-insulativity, suitable machine
Tool performance and processability, especially dielectric properties.The relative dielectric coefficient of material is smaller, and the transmission speed of signal is faster；It is situated between
The electrical loss factor is smaller, as soon as loss power of the signal in transmission process keeps timing, the frequency for allowing to transmit is higher, that is, exists
Under signal frequency is identical, dielectric loss value is smaller, and distortion rate is lower in signals transmission.
Electronic product constantly develops to lightening, high reliability direction, high density interconnection（HDI）Technology is applied to
The mainstream of print circuit plates making technology, through-hole microminiaturization, the development of the core technologies such as conducting wire fining, it is desirable that production printing electricity
The substrate of road plate must have high characteristic impedance, i.e., low dielectric constant.Therefore, excellent dielectric properties, cover as high frequency
The Essential Performance Requirements of copper sheet development.
To solve the above-mentioned problems, the purpose of the present invention is research and develop a kind of novel high dielectric property electronic material and its preparation side
Method.
Summary of the invention
For the defects in the prior art, the object of the present invention is to provide a kind of novel high dielectric property electronic material and preparations
Method.
A kind of novel high dielectric property electronic material provided according to the present invention, the novel high dielectric property electronic material is under
Column raw material is made：15-32 parts of fullerene derivate, 4-15 parts of cyanate chlorobenzene, 5-11 parts of permanganic anhydride, diphenyl phosphine oxide 2-4
Part, 2-4 parts of diallyl phthalate, 3-4 parts of four glycidyl group diamino dimethylene benzene, organic crystalline palpus 1.9-4.0
Part, 1.9-3.7 parts of petroleum ether, 2.3-4.8 parts of polyphenylene sulfide, 13-21 parts of hollow glass micropearl, ultraviolet absorbing agent 1.4-2.2
Part, 1.5-2.9 parts of stabilizer.
Preferably, the novel high dielectric property electronic material is made of following raw materials according：15-22 parts of fullerene derivate, cyanogen
4-11 parts of acid esters chlorobenzene, 7-11 parts of permanganic anhydride, 3-4 parts of diphenyl phosphine oxide, 3-4 parts of diallyl phthalate, four shrinks are sweet
3-4 parts of oil base diamino dimethylene benzene, organic crystalline must 1.9-3.0 parts, 1.9-3.1 parts of petroleum ethers, polyphenylene sulfide 2.3-4.2
Part, 15-21 parts of hollow glass micropearl, 1.7-2.2 parts of ultraviolet absorbing agent, 1.5-2.1 parts of stabilizer.
Preferably, the novel high dielectric property electronic material is made of following raw materials according：17 parts of fullerene derivate, cyanate
7 parts of chlorobenzene, 9 parts of permanganic anhydride, 3 parts of diphenyl phosphine oxide, 4 parts of diallyl phthalate, four glycidyl group diamino two are sub-
4 parts of methylbenzene, organic crystalline must 2.0 parts, 2.1 parts of petroleum ethers, 2.7 parts of polyphenylene sulfide, 18 parts of hollow glass micropearl, ultraviolet radiation absorption
1.9 parts of agent, 1.7 parts of stabilizer.
Preferably, the partial size of the hollow glass micropearl is 450-530nm.
Preferably, the length of the organic crystalline palpus is 220-250 nanometers.
Preferably, the ultraviolet absorbing agent, which contains, at least one is formed by aromatic series fatty acid and unitary or polyalcohol
Ester type compound.
Preferably, the preparation method includes the following steps：
Step 1: weighing fullerene derivate, cyanate chlorobenzene, permanganic anhydride, diphenyl phosphine oxide, O-phthalic according to parts by weight
Sour two acrylic esters, four glycidyl group diamino dimethylene benzene, organic crystalline palpus, petroleum ether, polyphenylene sulfide, hollow glass are micro-
Pearl, ultraviolet absorbing agent, stabilizer；
Step 2: fullerene derivate will be added in cyanate chlorobenzene solution, permanganic anhydride, back flow reaction 20- is then added
Revolving combines and dries and removes solvent after 30min, obtains cyanate prepolymer；
Step 3: cyanate prepolymer and diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino two is sub-
Organic crystalline palpus and petroleum ether is added after methylbenzene mixing after 90-110 DEG C of stirring 0.5-1h, continues to stir 21-50min, it is natural
Cooling obtains cyanate modified object；
Step 4: adding after cyanate modified object is crushed with polyphenylene sulfide, hollow glass micropearl, ultraviolet absorbing agent, stabilizer
Enter in extruder, extrusion obtains high dielectric property particle；
Step 5: hot pressing high dielectric property particle.
Preferably, the step 4 extrusion condition is under the conditions of 125-155 DEG C.
Compared with prior art, the present invention has following beneficial effect：
A kind of novel high dielectric property electronic material provided by the invention, including fullerene derivate, cyanate chlorobenzene, permanganic acid
Acid anhydride, diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino dimethylene benzene, organic crystalline palpus, petroleum ether,
Polyphenylene sulfide, hollow glass micropearl, ultraviolet absorbing agent, stabilizer.In the present invention, pass through fullerene derivate, cyanate chlorine
Benzene, permanganic anhydride are applied in combination, and can obtain excellent in mechanical performance, the polymer body of Good Heat-resistance；By being added two
Benzene phosphine oxide, diallyl phthalate, four glycidyl group diamino dimethylene benzene are conducive to condensate polymerization；Hollow glass
The crosslinking points of glass microballon, stabilizer being added in increase system solidification process, obtain interpenetrating polymer structure, guarantee high-frequency electronic
The intensity of dielectric material；Compatibility is good between each component of the present invention, and the material of excellent dielectric properties has thus been prepared,
With good mechanical property, heat resistance, especially there are excellent dielectric properties, the substrate development for meeting printed circuit board is answered
With.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.
Embodiment 1
A kind of novel high dielectric property electronic material provided in this embodiment, the novel high dielectric property electronic material is by following raw materials according
It is made：32 parts of fullerene derivate, 4 parts of cyanate chlorobenzene, 11 parts of permanganic anhydride, 2 parts of diphenyl phosphine oxide, diallyphthalate
4 parts of ester, 3 parts of four glycidyl group diamino dimethylene benzene, organic crystalline must 4.0 parts, 1.9 parts of petroleum ethers, polyphenylene sulfide 4.8
Part, 13 parts of hollow glass micropearl, 2.2 parts of ultraviolet absorbing agent, 1.5 parts of stabilizer.
Preferably, the partial size of the hollow glass micropearl is 530nm.
Preferably, the length of the organic crystalline palpus is 250 nanometers.
Preferably, the ultraviolet absorbing agent contains at least one by aromatic series fatty acid and unitary or polyalcohol
The ester type compound of formation.
Preferably, the preparation method includes the following steps：
Step 1: weighing fullerene derivate, cyanate chlorobenzene, permanganic anhydride, diphenyl phosphine oxide, O-phthalic according to parts by weight
Sour two acrylic esters, four glycidyl group diamino dimethylene benzene, organic crystalline palpus, petroleum ether, polyphenylene sulfide, hollow glass are micro-
Pearl, ultraviolet absorbing agent, stabilizer；
Step 2: fullerene derivate will be added in cyanate chlorobenzene solution, permanganic anhydride, back flow reaction 20- is then added
Revolving combines and dries and removes solvent after 30min, obtains cyanate prepolymer；
Step 3: cyanate prepolymer and diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino two is sub-
Organic crystalline palpus and petroleum ether is added after methylbenzene mixing after 110 DEG C of stirring 0.5h, continues to stir 50min, natural cooling obtains
Cyanate modified object；
Step 4: adding after cyanate modified object is crushed with polyphenylene sulfide, hollow glass micropearl, ultraviolet absorbing agent, stabilizer
Enter in extruder, extrusion obtains high dielectric property particle；
Step 5: hot pressing high dielectric property particle.
Preferably, the step 4 extrusion condition is under the conditions of 155 DEG C.
Embodiment 2
A kind of novel high dielectric property electronic material provided in this embodiment, the novel high dielectric property electronic material is by following raw materials according
It is made：15 parts of fullerene derivate, 11 parts of cyanate chlorobenzene, 7 parts of permanganic anhydride, 4 parts of diphenyl phosphine oxide, diallyphthalate
3 parts of ester, 4 parts of four glycidyl group diamino dimethylene benzene, organic crystalline must 1.9 parts, 3.1 parts of petroleum ethers, polyphenylene sulfide 2.3
Part, 21 parts of hollow glass micropearl, 1.7 parts of ultraviolet absorbing agent, 2.1 parts of stabilizer.
Preferably, the partial size of the hollow glass micropearl is 450nm.
Preferably, the length of the organic crystalline palpus is 220 nanometers.
Preferably, the ultraviolet absorbing agent contains at least one by aromatic series fatty acid and unitary or polyalcohol
The ester type compound of formation.
Preferably, the preparation method includes the following steps：
Step 1: weighing fullerene derivate, cyanate chlorobenzene, permanganic anhydride, diphenyl phosphine oxide, O-phthalic according to parts by weight
Sour two acrylic esters, four glycidyl group diamino dimethylene benzene, organic crystalline palpus, petroleum ether, polyphenylene sulfide, hollow glass are micro-
Pearl, ultraviolet absorbing agent, stabilizer；
Step 2: fullerene derivate will be added in cyanate chlorobenzene solution, permanganic anhydride, back flow reaction is then added
Revolving combines and dries and removes solvent after 20min, obtains cyanate prepolymer；
Step 3: cyanate prepolymer and diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino two is sub-
Organic crystalline palpus and petroleum ether is added after methylbenzene mixing after 90 DEG C of stirring 1h, continues to stir 21min, natural cooling obtains cyanic acid
Ester modified object；
Step 4: adding after cyanate modified object is crushed with polyphenylene sulfide, hollow glass micropearl, ultraviolet absorbing agent, stabilizer
Enter in extruder, extrusion obtains high dielectric property particle；
Step 5: hot pressing high dielectric property particle.
Preferably, the step 4 extrusion condition is under the conditions of 125 DEG C.
Embodiment 3
A kind of novel high dielectric property electronic material provided in this embodiment, the novel high dielectric property electronic material is by following raw materials according
It is made：17 parts of fullerene derivate, 7 parts of cyanate chlorobenzene, 9 parts of permanganic anhydride, 3 parts of diphenyl phosphine oxide, diallyphthalate
4 parts of ester, 4 parts of four glycidyl group diamino dimethylene benzene, organic crystalline must 2.0 parts, 2.1 parts of petroleum ethers, polyphenylene sulfide 2.7
Part, 18 parts of hollow glass micropearl, 1.9 parts of ultraviolet absorbing agent, 1.7 parts of stabilizer.
Preferably, the partial size of the hollow glass micropearl is 480nm.
Preferably, the length of the organic crystalline palpus is 240 nanometers.
Preferably, the ultraviolet absorbing agent contains at least one by aromatic series fatty acid and unitary or polyalcohol
The ester type compound of formation.
Preferably, the preparation method includes the following steps：
Step 1: weighing fullerene derivate, cyanate chlorobenzene, permanganic anhydride, diphenyl phosphine oxide, O-phthalic according to parts by weight
Sour two acrylic esters, four glycidyl group diamino dimethylene benzene, organic crystalline palpus, petroleum ether, polyphenylene sulfide, hollow glass are micro-
Pearl, ultraviolet absorbing agent, stabilizer；
Step 2: fullerene derivate will be added in cyanate chlorobenzene solution, permanganic anhydride, back flow reaction is then added
Revolving combines and dries and removes solvent after 25min, obtains cyanate prepolymer；
Step 3: cyanate prepolymer and diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino two is sub-
Organic crystalline palpus and petroleum ether is added after methylbenzene mixing after 96 DEG C of stirring 0.8h, continues to stir 40min, natural cooling obtains cyanogen
Acid esters modifier；
Step 4: adding after cyanate modified object is crushed with polyphenylene sulfide, hollow glass micropearl, ultraviolet absorbing agent, stabilizer
Enter in extruder, extrusion obtains high dielectric property particle；
Step 5: hot pressing high dielectric property particle.
Preferably, the step 4 extrusion condition is under the conditions of 145 DEG C.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (8)
1. a kind of novel high dielectric property electronic material, it is characterised in that：The novel high dielectric property electronic material is by following raw materials according
It is made：15-32 parts of fullerene derivate, 4-15 parts of cyanate chlorobenzene, 5-11 parts of permanganic anhydride, 2-4 parts of diphenyl phosphine oxide, adjacent benzene
2-4 parts of two acrylic ester of dioctyl phthalate, 3-4 parts of four glycidyl group diamino dimethylene benzene, organic crystalline must 1.9-4.0 parts, petroleum
1.9-3.7 parts of ether, 13-21 parts of hollow glass micropearl, 1.4-2.2 parts of ultraviolet absorbing agent, is stablized 2.3-4.8 parts of polyphenylene sulfide
1.5-2.9 parts of agent.
2. a kind of novel high dielectric property electronic material according to claim 1, it is characterised in that：The novel high dielectric property
Electronic material is made of following raw materials according：15-22 parts of fullerene derivate, 4-11 parts of cyanate chlorobenzene, 7-11 parts of permanganic anhydride,
It is 3-4 parts of diphenyl phosphine oxide, 3-4 parts of diallyl phthalate, 3-4 parts of four glycidyl group diamino dimethylene benzene, organic
1.9-3.0 parts of whisker, 1.9-3.1 parts of petroleum ether, 2.3-4.2 parts of polyphenylene sulfide, 15-21 parts of hollow glass micropearl, ultraviolet light are inhaled
Receive agent 1.7-2.2 parts, 1.5-2.1 parts of stabilizer.
3. a kind of novel high dielectric property electronic material according to claim 1, it is characterised in that：The novel high dielectric property
Electronic material is made of following raw materials according：17 parts of fullerene derivate, 7 parts of cyanate chlorobenzene, 9 parts of permanganic anhydride, diphenyl phosphine oxide 3
Part, 4 parts of diallyl phthalate, 4 parts of four glycidyl group diamino dimethylene benzene, organic crystalline palpus 2.0 parts, petroleum ether
2.1 parts, 2.7 parts of polyphenylene sulfide, 18 parts of hollow glass micropearl, 1.9 parts of ultraviolet absorbing agent, 1.7 parts of stabilizer.
4. a kind of novel high dielectric property electronic material according to claim 1, it is characterised in that：The hollow glass micropearl
Partial size be 450-530nm.
5. a kind of novel high dielectric property electronic material according to claim 1, it is characterised in that：The length of the organic crystalline palpus
Degree is 220-250 nanometers.
6. a kind of novel high dielectric property electronic material according to claim 1, it is characterised in that：The ultraviolet absorbing agent
Contain at least one ester type compound formed by aromatic series fatty acid and unitary or polyalcohol.
7. a kind of preparation method of novel high dielectric property electronic material according to claim 1, it is characterised in that：The system
Preparation Method includes the following steps：
Step 1: weighing fullerene derivate, cyanate chlorobenzene, permanganic anhydride, diphenyl phosphine oxide, O-phthalic according to parts by weight
Sour two acrylic esters, four glycidyl group diamino dimethylene benzene, organic crystalline palpus, petroleum ether, polyphenylene sulfide, hollow glass are micro-
Pearl, ultraviolet absorbing agent, stabilizer；
Step 2: fullerene derivate will be added in cyanate chlorobenzene solution, permanganic anhydride, back flow reaction 20- is then added
Revolving combines and dries and removes solvent after 30min, obtains cyanate prepolymer；
Step 3: cyanate prepolymer and diphenyl phosphine oxide, diallyl phthalate, four glycidyl group diamino two is sub-
Organic crystalline palpus and petroleum ether is added after methylbenzene mixing after 90-110 DEG C of stirring 0.5-1h, continues to stir 21-50min, it is natural
Cooling obtains cyanate modified object；
Step 4: adding after cyanate modified object is crushed with polyphenylene sulfide, hollow glass micropearl, ultraviolet absorbing agent, stabilizer
Enter in extruder, extrusion obtains high dielectric property particle；
Step 5: hot pressing high dielectric property particle.
8. the preparation method of novel high dielectric property electronic material according to claim 7, it is characterised in that：The step 4
Extrusion condition is under the conditions of 125-155 DEG C.
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| CN107337897A (en) * | 2017-07-28 | 2017-11-10 | 嘉兴立新材料有限公司 | A kind of heat-barrier material and preparation method thereof |
| CN107353640A (en) * | 2017-07-20 | 2017-11-17 | 苏州益可泰电子材料有限公司 | A kind of Halogen high dielectric property electronic material and preparation method thereof |
| CN107383764A (en) * | 2017-07-28 | 2017-11-24 | 嘉兴立新材料有限公司 | A kind of compound low Heat Conduction Material and preparation method thereof |
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2018
- 2018-05-17 CN CN201810470939.2A patent/CN108912695A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1740655A1 (en) * | 2004-04-13 | 2007-01-10 | Zyvex Corporation | Methods for the synthesis of modular poly(phenyleneethynylenes) and fine tuning the electronic properties thereof for the functionalization of nanomaterials |
| US20100009165A1 (en) * | 2008-07-10 | 2010-01-14 | Zyvex Performance Materials, Llc | Multifunctional Nanomaterial-Containing Composites and Methods for the Production Thereof |
| US20110312098A1 (en) * | 2010-05-19 | 2011-12-22 | Zyvex Performance Materials | System and method of assessing nanotube purity |
| CN107298857A (en) * | 2017-07-20 | 2017-10-27 | 苏州益可泰电子材料有限公司 | A kind of halogen-free flame-resistant electronic material and preparation method thereof |
| CN107353640A (en) * | 2017-07-20 | 2017-11-17 | 苏州益可泰电子材料有限公司 | A kind of Halogen high dielectric property electronic material and preparation method thereof |
| CN107337897A (en) * | 2017-07-28 | 2017-11-10 | 嘉兴立新材料有限公司 | A kind of heat-barrier material and preparation method thereof |
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