CN108899759A - A kind of hybrid integrated chaos semiconductor laser chip and laser - Google Patents
A kind of hybrid integrated chaos semiconductor laser chip and laser Download PDFInfo
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- CN108899759A CN108899759A CN201810929618.4A CN201810929618A CN108899759A CN 108899759 A CN108899759 A CN 108899759A CN 201810929618 A CN201810929618 A CN 201810929618A CN 108899759 A CN108899759 A CN 108899759A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The embodiment of the present invention provides a kind of hybrid integrated chaos semiconductor laser chip and laser.The chip of laser includes the first chip substrate, is fixed on the upper surface of first chip substrate and sequentially connected first laser device assembly, passive optical waveguide and second laser device assembly；The first laser device assembly and the second laser device assembly, are the integrated chip of DFB and SOA；The SOA of first laser device assembly for controlling mutual injection intensity, and generates ASE noise, carries out random perturbation with the laser that the DFB of DFB and the second laser device assembly to first laser device assembly are generated；The SOA of second laser device assembly, for controlling the size of Output optical power, or the size of adjusting injected optical power and feedback intensity.The mutual injecting structure of the chaos of two lasers of the embodiment of the present invention generates chaos light, realizes Chaotic Synchronous, structure is simple, easily controllable.
Description
Technical field
The present embodiments relate to field of lasers more particularly to a kind of hybrid integrated chaos semiconductor laser chip and
Laser.
Background technique
Since the chaos optical signal of semiconductor laser has unique confidentiality and broadband character, semiconductor laser
Device chaotic synchronizing system has a wide range of applications in secret communication field.Mode that there are mainly three types of the generations of chaotic signal,
Optical feedback, external optical injection and external electro-optical feedback, currently, researcher carries out the system for generating chaotic signal
Than more comprehensively research, but most chaos source is built by discrete device, volume is big, structure is complicated, vulnerable to
Influence, the output of external environment are unstable.Compared with the device of discrete devices composition, integrated chip size is smaller, cost is relatively low,
Stability is preferable, is suitable for producing in enormous quantities.In order to combine the advantage of chaos applications and integrated circuit, the chaos half of integreted phontonics
Conductor laser is met the tendency of, therefore progress both at home and abroad in this respect is like a raging fire.
Integrated chaos chip in the prior art has implementation in more.For example, a kind of integreted phontonics chaos semiconductor swashs
Light device constitutes continuously distributed formula feedback cavity using bait passive optical waveguide is mixed as continuous scatterer, using without isolation Bi-directional amplifier
Semiconductor optical amplification chip controls or so distributed Feedback semiconductor laser chip the optical power size and passive light mutually injected
Waveguide scatters by force the feedback intensity of left distributed Feedback semiconductor laser chip however, adulterating passive optical waveguide in the structure
Degree be difficult to control, random scatterers loss it is larger, left and right distributed Feedback semiconductor laser chip, without isolation Bi-directional amplifier
Optical loss caused by coupling between device and passive optical waveguide is larger.For another example, a kind of InP-base list of random scatter light feedback
Piece integrates chaos semiconductor laser chip, and using single slice integration technique, left and right Distributed Feedback Laser provides signal source, passes through left and right
Passive optical waveguide transmits optical signal, injection and feedback intensity is adjusted by the semiconductor optical amplifier of Bi-directional amplifier, using doping
Passive optical waveguide constitutes continuously distributed formula feedback cavity, but single-chip integration of this structure based on random scatter as continuous scattering chamber
Structure, complex manufacturing technology.
Therefore, it is badly in need of a kind of simple process and the integrated chip of high-quality chaos light can be generated.
Summary of the invention
In view of the problems of the existing technology, the embodiment of the present invention provides a kind of hybrid integrated chaos semiconductor laser core
Piece and laser.
In a first aspect, the embodiment of the present invention provides a kind of hybrid integrated chaos semiconductor laser chip, including：
First chip substrate is fixed on the upper surface of first chip substrate and sequentially connected first laser device group
Part, passive optical waveguide and second laser device assembly；
The first laser device assembly and the second laser device assembly are distributed feedback laser DFB and partly lead
The integrated chip of body amplifier SOA；
The SOA of the first laser device assembly, for controlling mutual injection intensity, and generates ASE noise,
Random perturbation is carried out with the laser that the DFB of DFB and the second laser device assembly to the first laser device assembly are generated；
The SOA of the second laser device assembly, for controlling the size of Output optical power, or adjust injected optical power with
The size of feedback intensity.
Second aspect, the embodiment of the present invention provide a kind of laser, including first aspect of the embodiment of the present invention and its any
Hybrid integrated chaos semiconductor laser chip described in alternative embodiment.
Hybrid integrated chaos semiconductor laser chip provided in an embodiment of the present invention, using first laser device assembly and the
The mutual injecting structure of the chaos of two lasers of dual-laser device assembly generates chaos light, realizes Chaotic Synchronous, structure is simple, is easy to control
System.The amplification region SOA of first laser device assembly can control mutual injection intensity, and the spontaneous radiation for the amplification that the amplification region SOA generates is made an uproar
Sound can carry out random perturbation to the laser that two Distributed Feedback Lasers generate；According to the difference of the position DFB and SOA, second laser group
The amplification region SOA of part can control the size of Output optical power or adjust the size of injected optical power and feedback intensity；Hybrid integrated
Structure have the advantages that small in size, light weight and cost is low, integration is strong, manufacture craft is simple, output is stable.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is hybrid integrated of embodiment of the present invention chaos semiconductor laser chip structure schematic diagram；
Fig. 2 is that laser assembly of the embodiment of the present invention grows schematic diagram.
Description of symbols
1, the first chip substrate, 3, passive optical waveguide,
2-1, first laser device assembly, 2-2, second laser device assembly,
21、N+Electrode layer, the 22, second chip substrate,
23, lower limit layer, 24, active layer,
25, upper limit value layer, 251, distributed feed-back Bragg grating,
26, ducting layer, 27, P+Electrode layer,
28, isolating trenches.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Fig. 1 is hybrid integrated of embodiment of the present invention chaos semiconductor laser chip structure schematic diagram, and as shown in Figure 1 is mixed
Intersection at chaos semiconductor laser chip, including：
First chip substrate 1 is fixed on the upper surface of first chip substrate 1 and sequentially connected first laser device group
Part 2-1, passive optical waveguide 3 and second laser device assembly 2-2；
The first laser device assembly 2-1 and second laser device assembly 2-2, is distributed feedback laser DFB
With the integrated chip of semiconductor amplifier SOA；
The SOA of the first laser device assembly 2-1, for controlling mutual injection intensity, and the spontaneous radiation for generating amplification is made an uproar
Sound, with to the first laser device assembly 2-1 DFB and the second laser device assembly 2-2 DFB generate laser carry out with
Machine disturbance；
The SOA of the second laser device assembly 2-2, for controlling the size of Output optical power, or adjusting injection light function
The size of rate and feedback intensity.
Referring to FIG. 1, the hybrid integrated chaos semiconductor laser chip of the embodiment of the present invention includes two lasers, i.e.,
First laser device assembly 2-1 and second laser device assembly 2-2, each laser is the integrated chip of DFB+SOA；Passive light wave
3 input terminal connection first laser device assembly 2-1 is led, output end connects second laser device assembly 2-2.First laser device assembly and
The DFB of second laser device assembly provides optical signal for entire chip of laser, and optical signal is finally from the outer of second laser device assembly
Side output.The amplification region SOA in first laser device assembly carries out Bi-directional amplifier by controlling mutual injection intensity, to optical signal, together
When SOA in ASE noise can provide random light feedback for the DFB optical signal generated.In first laser device assembly
The amplification region SOA, it is different in the function that different positions is realized since position is adjustable, such as controllable control output light
The size of the size of power or adjustable injected optical power and feedback intensity, specifically, can be according to production application
Demand is configured, and the embodiment of the present invention is not construed as limiting this.
The hybrid integrated chaos semiconductor laser chip of the embodiment of the present invention, is mutually injected using the chaos of two lasers
Structure generates chaos light, realizes Chaotic Synchronous, structure is simple, easily controllable.The amplification region SOA of first laser device assembly is controllable
Mutual injection intensity, the ASE noise that the amplification region SOA generates the laser that two Distributed Feedback Lasers generate can be carried out with
Machine disturbance；According to the difference of the position DFB and SOA, the amplification region SOA of second laser device assembly can control the size of Output optical power
Or adjust the size of injected optical power and feedback intensity；The structure of hybrid integrated is with small in size, light weight and cost is low, integrated
Property it is strong, manufacture craft is simple, the stable advantage of output.
Based on the above embodiment, the first laser device assembly 2-1 includes the left side area DFB and the right side area SOA；
The second laser device assembly 2-2 includes the left side area DFB and the right side area SOA, or including the left side area SOA and right side
The area DFB；
The integrated core of the first laser device assembly 2-1 and the area Zhong DFB the second laser device assembly 2-2 and the area SOA
Chip architecture is consistent or symmetrical, is made by identical technique.
It should be noted that the left side of the second laser device assembly of the embodiment of the present invention is the area DFB, right side is the area SOA.
The second laser device assembly of the embodiment of the present invention finally carries out optical signal output, and the position in the area DFB and the area SOA can
With exchange, it can left side be the area DFB, right side be the area SOA, can also left side be the area SOA, right side be the area DFB.If the area SOA exists
Right side then can control the size of Output optical power；If the big of injected optical power and feedback intensity in left side, is adjusted in the area SOA
It is small.
If the area SOA of second laser device assembly is in right side, the structure of second laser device assembly and first laser device assembly
It is completely the same；If the area SOA of second laser device assembly is in left side, the structure of second laser device assembly and first laser device assembly
It is full symmetric.First laser device assembly 2-1 and the manufacture craft of second laser device assembly 2-2 are also identical, by identical
Technique is made.
The area DFB is grown together with the area SOA in the chip of laser of the embodiment of the present invention can avoid coupling loss, and performance is more
Stablize, process complexity is reduced using hybrid integrated structure, production is simple, and stability is high.
Based on the above embodiment, there is ginseng between the first laser device assembly 2-1 and the second laser device assembly 2-2
Number mismatch, so that the difference on the frequency of the first laser device assembly 2-1 and the output light wavelength of the second laser device assembly 2-2 are
10~15GHz, output power deviation are lower than 70%.
In the embodiment of the present invention, since there are parameter mistakes between first laser device assembly 2-1 and second laser device assembly 2-2
The locking synchronization matched, therefore left first laser device assembly 2-1 and second laser device assembly 2-2 can effectively be inhibited to occur when mutually injecting
Effect.
Fig. 2 is that laser assembly of the embodiment of the present invention grows schematic diagram, and based on the above embodiment, the distributed Feedback swashs
The integrated chip of light device DFB and semiconductor amplifier SOA, specifically include：
Second chip substrate 22；
It is made in the lower limit layer 23 of the first surface of second chip substrate 22；
The active layer 24 being made on the lower limit layer 23；
The upper limiting layer 25 being made on the active layer 24, the left area or right area system of the upper limiting layer 25
It is distributed feedback Bragg grating layer 251, wherein the region that production is distributed feedback Bragg grating layer is the area DFB, is not made
The region of distributed feed-back Bragg grating layer is the area SOA；
It is made in the ducting layer 26 in the middle position on the upper limiting layer 25, the ducting layer 26 is strip；
The P being made on the ducting layer 26+Electrode layer 27, the P+It is two sections that electrode layer 27 is divided to by isolating trenches 28, point
The area DFB and the area SOA are not corresponded to；
It is made in the N of the second surface of second chip substrate 22+Electrode layer 21, wherein the second surface be with
The opposite surface of the first surface.
Referring to FIG. 2, the integrated chip of DFB and SOA successively includes N from bottom to up+Electrode layer 21, the second chip substrate
22, lower limit layer 23, active layer 24, upper limiting layer 25, ducting layer 26 and P+Electrode layer 27.Wherein, 25 part system of upper limiting layer
It is distributed feedback Bragg grating layer 251, the region that production is distributed feedback Bragg grating layer is the area DFB, such as left side in Fig. 2
DFB shown in dotted line, the region for not making distributed feed-back Bragg grating layer is the area SOA, as shown in right side dotted line in Fig. 2
SOA.Wherein, P+Electrode layer 27 is strip, and length is identical as the length of integrated chip, and width is narrow compared with integrated chip, is located at integrated
The middle position of the width of chip, and being divided to by isolating trenches 28 is two sections, respectively corresponds the area DFB and the area SOA, thus, P+Electrode
27 Fen Wei DFB area P of floor+Electrode layer and the area SOA P+Electrode layer；Wherein isolating trenches 28 are by injecting He+Or the side such as material etch
Formula makes high resistance area, to realize the electric isolution between each electrode.
Optionally, the length range in the area DFB is 400~600 μm, and the length range in the area SOA is 100~300 μ
m.Preferably, the length in the area DFB is 500 μm, and the length in the area SOA is 200 μm.
Based on the above embodiment, the material of the distributed feed-back Bragg grating in the area DFB is InP and InGaAsP, is whole
A chip provides optical signal；The area SOA is the double heterojunction multi-quantum pit structure of InGaAs material and/or InGaAsP material,
For Bi-directional amplifier optical signal, the ASE noise generated in the amplification region SOA can provide random light feedback.
The length in the area DFB and the area SOA of two lasers of hybrid integrated chaos semiconductor laser chip in the present embodiment
Range and material structure are spent, all the same, the position the SOA difference in second laser device assembly has no effect on integrated artistic.It is described mixed
Intersection is 5~15mm at the length range of the passive optical waveguide of chaos semiconductor laser chip, and preferred length is 10mm, material
Material is Si base SiO2Waveguide is used for transmission optical signal.
Based on the above embodiment, the lower surface of first chip substrate 1 is provided with the first thermal tuning substrate and the second heat
Tune substrate；
The position of the first thermal tuning substrate is corresponding with the position of the first laser device assembly 2-1；Described second
The position of thermal tuning substrate is corresponding with the position of the second laser device assembly 2-2.
The first thermal tuning substrate and the second thermal tuning substrate in Fig. 1 and are not drawn into the present embodiment.First chip substrate 1
Two surfaces, referred to as upper and lower surfaces, wherein upper surface regulation has first laser device assembly 2-1, second laser group
Part 2-2 and passive optical waveguide, lower surface are provided with the first thermal tuning substrate and the second thermal tuning substrate.Referring to FIG. 1, the first heat
The lower surface of the first chip substrate 1, the position opposite with first laser device assembly 2-1, the second thermal tuning is arranged in tuning substrate
The lower surface of the first chip substrate 1, the position opposite with second laser device assembly 2-2 is arranged in substrate.By the way that thermal tuning is arranged
Substrate can control the output wavelength of first laser device assembly 2-1, second laser device assembly 2-2 respectively, realize Distributed Feedback Laser
The independent control of wavelength and output power produces for example, controlling DFB in first laser device assembly 2-1 by the first thermal tuning substrate
The wavelength and output power of raw optical signal control what DFB in second laser device assembly 2-2 was generated by the second thermal tuning substrate
The wavelength and output power of optical signal, to realize the independent control to two lasers.
Based on the above embodiment, the connection surface of the first laser device assembly 2-1 and the passive optical waveguide 3 are provided with
The connection surface of index matching glue-line, the second laser device assembly 2-2 and the passive optical waveguide 3 is provided with refractive index
With glue-line.
Specifically, index matching glue-line should be uniformly set at two apparent surfaces.First laser device assembly 2-1 and nothing
The index matching glue-line of the connection surface of source optical waveguide 3, for connecting first laser device assembly 2-1 and the passive optical waveguide
3；The index matching glue-line of the connection surface of second laser device assembly 2-2 and passive optical waveguide 3, for connecting second laser
Component 2-2 and the passive optical waveguide 3；Index matching glue-line can reduce the reflection damage in different materials chip coupling time simultaneously
Consumption improves optical coupling efficiency.
Based on the above embodiment, the first laser device assembly 2-1 and second laser device assembly 2-2, by falling
Dress mount technology is fixed on the upper surface of first chip substrate 1.
Specifically, first laser device assembly 2-1 is fixed on chip substrate upper surface, second laser using upside-down mounting mount technology
Device assembly 2-2 is fixed on chip substrate upper surface using upside-down mounting mount technology.
The embodiment of the present invention generates chaos, it can be achieved that Chaotic Synchronous, structure using the mutual injecting structure of two laser chaos
Simply, easily controllable, parameter is multiple adjustable.The amplification region SOA in first laser device assembly can control mutual injection intensity, and SOA is put
The ASE noise that great Qu is generated can carry out random perturbation to the laser that two lasers generate；Second laser group
If the SOA in part is on right side, the amplification region SOA can control the size of Output optical power；If after DFB and SOA location swap, i.e.,
SOA is in left side, then the amplification region SOA is used to adjust the size of injected optical power and feedback intensity；Distributed Feedback Laser area and SOA amplify
Area is grown together can avoid coupling loss, and performance is more stable；Two distributions in left and right can be controlled using thermal tuning substrate respectively
The output wavelength of laser realizes the wavelength of Distributed Feedback Laser and the independent control of output power.In technique, index matching
Glue can greatly reduce coupling loss when different chip hybrids integrate, and improve optical coupling efficiency；It is dropped using hybrid integrated structure
Low process complexity, production is simple, and stability is high.The hybrid integrated chaos semiconductor laser chip of the embodiment of the present invention,
The structure of its hybrid integrated has that small in size, light weight and cost is low, integration is strong, manufacture craft is simple, it is stable excellent to export
Point.
The embodiment of the present invention also provides a kind of laser, including described in the embodiment of the present invention and its any alternative embodiment
Hybrid integrated chaos semiconductor laser chip.
It should be noted that any includes mixing collection described in the above embodiment of the present invention and its any alternative embodiment
At the equipment of chaos semiconductor laser chip, all in the protection scope of the embodiment of the present invention.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that：It still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of hybrid integrated chaos semiconductor laser chip, which is characterized in that including：
First chip substrate is fixed on the upper surface of first chip substrate and sequentially connected first laser device assembly, nothing
Source optical waveguide and second laser device assembly；
The first laser device assembly and the second laser device assembly, are that distributed feedback laser DFB is put with semiconductor
The integrated chip of big device SOA；
The SOA of the first laser device assembly, for controlling mutual injection intensity, and generates ASE noise, with right
The laser that the DFB of the first laser device assembly and the DFB of the second laser device assembly are generated carries out random perturbation；
The SOA of the second laser device assembly, for controlling the size of Output optical power, or adjusting injected optical power and feedback
The size of intensity.
2. hybrid integrated chaos semiconductor laser chip according to claim 1, which is characterized in that the first laser
Device assembly includes the left side area DFB and the right side area SOA；
The second laser device assembly includes the left side area DFB and the right side area SOA, or including the left side area SOA and the right side area DFB；
The first laser device assembly is consistent with the integrated chip structure in the second laser device assembly area Zhong DFB and the area SOA
Or it is symmetrical, it is made by identical technique.
3. hybrid integrated chaos semiconductor laser chip according to claim 1 or 2, which is characterized in that described first
There are parameter mismatch between laser assembly and the second laser device assembly, so that the first laser device assembly and described the
The difference on the frequency of the output light wavelength of dual-laser device assembly is 10~15GHz, and output power deviation is lower than 70%.
4. hybrid integrated chaos semiconductor laser chip according to claim 1 or 2, which is characterized in that the distribution
The integrated chip of formula feedback laser DFB and semiconductor amplifier SOA, specifically include：
Second chip substrate；
It is made in the lower limit layer of the first surface of second chip substrate；
The active layer being made on the lower limit layer；
The upper limiting layer being made on the active layer, left area or the right area production of the upper limiting layer are distributed anti-
Present Bragg grating layer, wherein the region that production is distributed feedback Bragg grating layer is the area DFB, does not make distributed feed-back Bragg
The region of grating layer is the area SOA；
It is made in the ducting layer in the middle position on the upper limiting layer, the ducting layer is strip；
The P being made on the ducting layer+Electrode layer, the P+Electrode layer is divided into two sections by isolating trenches, respectively corresponds the area DFB
With the area SOA；
It is made in the N of the second surface of second chip substrate+Electrode layer.
5. hybrid integrated chaos semiconductor laser chip according to claim 4, which is characterized in that the area DFB
Length range is 400~600 μm, and the length range in the area SOA is 100~300 μm.
6. hybrid integrated chaos semiconductor laser chip according to claim 4, which is characterized in that the area DFB
The material of distributed feed-back Bragg grating is InP and InGaAsP, and the area SOA is InGaAs material and/or InGaAsP material
Double heterojunction multi-quantum pit structure.
7. hybrid integrated chaos semiconductor laser chip described according to claim 1 or 2 or 5, which is characterized in that described
The lower surface of one chip substrate is provided with the first thermal tuning substrate and the second thermal tuning substrate；
The position of the first thermal tuning substrate is corresponding with the position of the first laser device assembly；The second thermal tuning base
The position at bottom is corresponding with the position of the second laser device assembly.
8. hybrid integrated chaos semiconductor laser chip described according to claim 1 or 2 or 5, which is characterized in that described
The connection surface of one laser assembly and the passive optical waveguide is provided with index matching glue-line, the second laser device assembly
The connection surface of the passive optical waveguide is provided with index matching glue-line.
9. hybrid integrated chaos semiconductor laser chip described according to claim 1 or 2 or 5, which is characterized in that described
One laser assembly and the second laser device assembly, are fixed on the upper of first chip substrate by upside-down mounting mount technology
Surface.
10. a kind of laser, which is characterized in that swash including the described in any item hybrid integrated chaos semiconductors of claim 1-9
Light device chip.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129948A (en) * | 2019-12-06 | 2020-05-08 | 太原理工大学 | Broadband chaotic laser chip based on weak gain coupling DFB laser |
| CN111147144A (en) * | 2019-12-06 | 2020-05-12 | 太原理工大学 | Chaotic light secret communication transceiver module of large key space |
| CN112187350A (en) * | 2020-09-18 | 2021-01-05 | 南京大学 | Compensation and correction method for mismatch caused by spontaneous radiation noise of amplifier in space chaotic laser secure communication system |
| US11152763B2 (en) * | 2017-11-16 | 2021-10-19 | Taiyuan University Of Technology | INP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light |
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| US11152763B2 (en) * | 2017-11-16 | 2021-10-19 | Taiyuan University Of Technology | INP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light |
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| CN111147144A (en) * | 2019-12-06 | 2020-05-12 | 太原理工大学 | Chaotic light secret communication transceiver module of large key space |
| CN111147144B (en) * | 2019-12-06 | 2020-12-22 | 太原理工大学 | Chaotic light secret communication transceiver module of large key space |
| CN111129948B (en) * | 2019-12-06 | 2021-10-08 | 太原理工大学 | Broadband chaotic laser chip based on weak gain coupling DFB laser |
| CN112187350A (en) * | 2020-09-18 | 2021-01-05 | 南京大学 | Compensation and correction method for mismatch caused by spontaneous radiation noise of amplifier in space chaotic laser secure communication system |
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