CN108899425A - A kind of high stability perovskite solar battery - Google Patents
A kind of high stability perovskite solar battery Download PDFInfo
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- CN108899425A CN108899425A CN201810703036.4A CN201810703036A CN108899425A CN 108899425 A CN108899425 A CN 108899425A CN 201810703036 A CN201810703036 A CN 201810703036A CN 108899425 A CN108899425 A CN 108899425A
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Abstract
The present invention relates to a kind of high stability perovskite solar batteries.A kind of chemical composition of perovskite light absorbing material is [(CH3CH2CH2CH2)4N]z(A)1‑zYX3, wherein A is organic or inorganic cation, preferably CH3NH3 +、NH2‑CH=NH2 +、Cs+、Li+、C4H9NH3 +、CH6N3 +、Na+、K+At least one of, Y Pb2+、Sn2+、Ge2+、Co2+、Fe2+、Mn2+、Cu2+And Ni2+At least one of, X Cl‒、Br‒、I‒、SCN‑、BF4 ‑At least one of, the range of z is 0≤z < 1.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of potassium ion that is based on to adulterate light absorbing layer
Perovskite solar battery and preparation method thereof.
Background technique
With the development of society, demand of the people to the energy is increasing, harm brought by traditional fossil energy has mesh
It sees altogether, the energy for developing cleanliness without any pollution is extremely urgent.Solar energy is especially noticeable one kind in new energy.Wherein calcium
Titanium ore solar battery is that development was swift and violent in recent years, has benefited from excellent photoelectric properties：Absorptivity is high, the bohr half of exciton
Diameter is big, and dielectric constant is big, and carrier diffusion speed is fast, and diffusion length is long.Therefore, perovskite solar battery and associated materials have been
As photovoltaic art research direction, the photoelectric conversion efficiency more than 23% is obtained at present.Perovskite solar battery has system
Standby simple process, it is low in cost the advantages that, but stability is bad, a service life short big obstacle as in the battery road for development,
Really to realize commercialization, it would be highly desirable to solve the stability of battery.
Current result of study show to influence stability test because being known as：First is that the stability of perovskite material, including
Thermal stability and humidity stability；Second is that the stability of device, the design and optimization including device architecture.The stability of material is wanted
Suitable material is selected to combine according to tolerance factor, so that perovskite lattice structure is more stable, to improve material itself
Stability.On device architecture, selection hydrophobic material avoids influence of the ambient enviroment to perovskite material with this as far as possible.
Summary of the invention
In view of the problems of the existing technology, the object of the present invention is to provide a kind of perovskite material of high stability, by
Perovskite light-absorption layer made from the material and the perovskite solar battery for having the perovskite light-absorption layer.
First invention provides a kind of perovskite light absorbing material, and the chemical composition of the perovskite light absorbing material is described
The chemical composition of perovskite light absorbing material is [(CH3CH2CH2CH2)4N]z(A)1-zYX3, wherein A be organic or inorganic sun from
Son, preferably CH3NH3 +,NH2- CH=NH2 +And Cs+、Li+、C4H9NH3 +、CH6N3 +、Na+、K+At least one of, Y Pb2+,
Sn2+, Ge2+, Co2+, Fe2+, Mn2+, Cu2+And Ni2+At least one of, X Cl-, Br-, I-、SCN-、BF4 -In at least one
Kind, the range of z is 0≤z < 1.
According to first invention, potassium ion doping is carried out in the position A of perovskite material, two dimension, three-dimensional can be formed
Battery can be improved when above-mentioned perovskite light absorbing material is used for perovskite solar battery in mixed perovskite structure
Thermal stability and wet stability.
Preferably, 0.0125≤z≤0.05.
Second invention provides a kind of perovskite light absorbing layer, contains any of the above-described kind of perovskite light absorbing material.
According to the second invention, which has high thermal stability and high humility stability.
Third invention provides the preparation method of above-mentioned perovskite light absorbing layer, including：By [(CH3CH2CH2CH2)4N]z
(A)1-zYX3Precursor solution is coated in substrate, is heat-treated, obtains perovskite light absorbing layer.
The preparation method simple process, preparation condition is mild, easily operated, has a extensive future.
Preferably, the [(CH3CH2CH2CH2)4N]z(A)1-zYX3Precursor solution is by by tetrabutyl ammonium halide, A
The halide of halide and Y, which are scattered in solvent, to be mixed and obtains.
Preferably, 80~100 DEG C of the treatment temperature of the heat treatment, the processing time is 40 minutes~60 minutes.
4th invention provides a kind of perovskite solar battery, contains above-mentioned perovskite light absorbing layer.
According to the 4th invention, which has high thermal stability and high humility stability.
The perovskite solar battery can successively include from bottom to top：Conductive substrates, electron transfer layer, the calcium titanium
Mine light absorbing layer and back electrode.
Detailed description of the invention
Fig. 1 shows the SEM figure of perovskite thin film made from embodiment 2 and comparative example.
Fig. 2 shows the XRD diagram of perovskite thin film made from embodiment and comparative example.
The humidity stability efficiency monitoring that Fig. 3 shows perovskite solar battery made from embodiment and comparative example is bent
Line.
Fig. 4 shows the thermal stability efficiency monitoring curve of perovskite solar battery made from embodiment and comparative example.
Fig. 5 shows perovskite solar battery stable state curve of output made from embodiment and comparative example.
Specific embodiment
The present invention is further illustrated below in conjunction with attached drawing and following embodiments, it should be appreciated that attached drawing and following embodiments
It is merely to illustrate the present invention, is not intended to limit the present invention.
It is disclosed a kind of perovskite light absorbing material, chemical composition is [(CH3CH2CH2CH2)4N]z(A)1-zYX3。
A is monovalent cation, preferably is selected from CH3NH3 +、NH2- CH=NH2 +、Cs+、Li+、C4H9NH3 +、CH6N3 +、Na+、K+In
It is at least one.That is, A can be one of these ions, any two or more combination being also possible in these ions.
Y is bivalent metal ion, more preferably from Pb2+、Sn2+、Ge2+、Co2+、Fe2+、Mn2+、Cu2+、Ni2+In at least one
Kind.That is, Y can be one of these ions, any two or more combination being also possible in these ions.
X is Cl-、Br-、I-、SCN-、BF4 -At least one of.That is, X can be one of these ions, it is also possible to these
Any two or more combination in ion.
The perovskite light absorbing material is at A doped with TBA (i.e. (CH3CH2CH2CH2)4N), wherein 0≤z < 1.
In preferred embodiment, 0.0125≤z≤0.05.TBA is adulterated with the doping, carbon battery not only can be improved
Thermal stability and humidity stability, can also guarantee the photoelectric conversion efficiency of battery to a certain extent.
In preferred embodiment, A CH3NH3 +、NH2- CH=NH2 +And Cs+At least one of.
In preferred embodiment, Y Pb2+。
In preferred embodiment, X Br-And I-At least one of.
In preferred embodiment, the chemical composition of perovskite light absorbing material is [(CH3CH2CH2CH2)4N]z(Cs0.05
(FA0.83MA0.17)0.95)1-zPb(I0.83Br0.17)3.Single perovskite material itself has stability difference, such as
MAPbI3、FAPbI3Deng, and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3The precursor solution of doping is deposited in stability
In certain advantage.FA indicates NH2- CH=NH2 +, MA expression CH3NH3 +。
A kind of perovskite light absorbing layer is also disclosed herein, contains above-mentioned perovskite light absorbing material.
The perovskite light absorbing layer is carried out after coating after the heat treatment of appropriateness, it may appear that two dimension, three-dimensional hybrid structure.
Reason is that the molecular chain length of TBA is long, in the position A of perovskite structure it is possible that expanding, so that by most after being heated
There is two dimension, three-dimensional mixed structure in the three-dimensional structure of beginning.By electron microscope (referring to Fig.1) it can be found that will become apparent from TBA
There is partial white crystal grain after the heating of appropriateness and is perpendicular on plane crystal grain in the perovskite film of introducing, adds without TBA
Perovskite after the heat treatment, only can gradually be decomposed in original three-dimensional structure.
In one embodiment, perovskite light absorbing layer can be prepared via a method which.
Firstly, preparation [(CH3CH2CH2CH2)4N]z(A)1-zYX3Precursor solution.
In one example, disperses the A salt of tetrabutyl ammonium halide, the halide of Y and X in solvent and be mixed, obtain
[(CH3CH2CH2CH2)4N]z(A)1-zYX3Precursor solution.
In another example, it is mixed the A salt of the halide of Y and X to form AYX3Precursor solution, then by AYX3Forerunner
Liquid solution and tetrabutyl halogenation ammonium salt solution are mixed, and obtain [(CH3CH2CH2CH2)4N]z(A)1-zYX3Precursor solution.
The proportion of each raw material is preferably stoichiometrically.
Tetrabutyl ammonium halide can be tetrabutylammonium iodide (TBA-I), tetrabutylammonium bromide (TBA-Br) etc..
Above-mentioned solvent can be DMSO, DMF etc..
Then, by [(CH3CH2CH2CH2)4N]z(A)1-zYX3Precursor solution is coated in substrate, and it is thin to obtain presoma
Film.Coating solution methods such as can use spin-coating method, infusion method.In spin-coating method, revolving speed can be 4000~6500rpm, rotation
Applying the time can be 20~30s.
Then, precursor thin-film is made annealing treatment, obtains perovskite light absorbing layer.Heat treatment can be used in annealing
Mode.After heat treatment, the pattern of precursor thin-film can occur significantly to change, and form two dimension, three-dimensional hybrid structure.
Heat treatment temperature can be 80~100 DEG C.Heat treatment time can be 40 minutes~60 minutes.
A kind of perovskite solar battery is also disclosed herein, contains above-mentioned perovskite light absorbing layer.
In one embodiment, which successively includes from bottom to top：Conductive substrates, electron transfer layer,
Mesoporous layer, perovskite light absorbing layer and back electrode.
Transparent conductive substrate can be rigidity or flexibility, can be to be coated with F doping SnO2(FTO) film or In adulterate SnO2
(ITO) glass or plastics of film.Its thickness can be 0.1~10mm.
Electron transfer layer is the dense film that can be transmitted electronics but stop hole, such as fine and close metal oxide is thin
At least one of film, preferably titanium oxide, zinc oxide, cobalt oxide, nickel oxide or its dopant film.Its thickness can be 10
~200nm.
Mesoporous layer can be the mesopore film that can transmit electronics, such as TiO2, SnO2, ZnO, ZnSnO3, CdS, CdSe etc..Its
Thickness can be 20~600nm.
Perovskite light absorbing layer can be as described above, its thickness can be 150~250nm.
Back electrode may include hole transmission layer and to electrode, can also save hole transmission layer.It can be carbon electricity to electrode
Extremely etc..Carbon pastes can be coated on perovskite light absorbing layer forms carbon electrode.Coating method can be silk-screen printing, blade coating etc..
The perovskite solar battery of the disclosure has excellent thermal stability and humidity stability, for example, monitoring is 85
It can still keep stable after placing 300 hours at DEG C, monitoring is placed under 65% damp condition can still keep steady for 1500 hours
It is fixed.
Enumerate embodiment further below with the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright above content is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary specific value.
Embodiment 1：
(1), TBA adulterates the preparation of precursor solution
Chemical composition is TBAz(A)1-zYX3, wherein A is FA+、MA+、Cs+Ion, Y Pb2+, X I+、Br+, z=0.0125.System
Preparation Method is：According to Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3Chemical formula measure than weighing a certain amount of FAI,
PbI2, MABr, PbBr2, CsI reagent is dissolved in DMF:DMSO=4：In 1 solvent.TBA-I (tetrabutylammonium iodide) solution is dissolved in
In DMSO, the TBA-I solution of certain volume is taken to be mixed in Cs according to stoichiometric amount0.05(FA0.83MA0.17)0.95Pb
(I0.83Br0.17)3In, ultimately form TBA0.0125(Cs0.05(FA0.83MA0.17)0.95)0.9875Pb(I0.83Br0.17)3。
(2), FTO glass is cleaned with alkalis, deionized water, acetone, EtOH Sonicate respectively, finally dried up.
(3), the spin coating TiO in clean transparent conductive substrate2Compacted zone, then 510 DEG C of sintering in Muffle furnace
30min。
(4), after the completion of step (3) are handled, UV ozone handles spin coating TiO after 15min2Mesoporous layer, then in Muffle
510 DEG C of sintering 30min in furnace.
(5), after step (4) are completed, spin coating is carried out using the precursor solution prepared in step (1), is moved back at 100 DEG C
Fiery 60min.
(6) film for obtaining step (5) makes carbon electrode with screen process press.
Embodiment 2：
The doping ratio of z in 1 step of embodiment (1) is adjusted to z=0.025, other conditions production same as Example 1
Solar battery.
Embodiment 3：
The doping ratio of z in 1 step of embodiment (1) is adjusted to z=0.05, other conditions production same as Example 1
Solar battery.
Embodiment 4：
The doping ratio of z in 1 step of embodiment (1) is adjusted to z=0.075, other conditions production same as Example 1
Solar battery.
Embodiment 5：
The doping ratio of z in 1 step of embodiment (1) is adjusted to z=0.1, other conditions production same as Example 1 is too
Positive energy battery.
Comparative example：
The doping ratio of z in 1 step of embodiment (1) is adjusted to z=0, the other conditions production sun same as Example 1
It can battery.
Table 1 shows photoelectric conversion efficiency of the embodiment 1 to embodiment 5 and comparative example under a sun light intensity.From table
In it can be seen that when the value of z is more than 0.05 after, efficiency value has apparent reduction, so the optimal doping of determination is compared is
0.0125≤z≤0.05。
The photoelectric conversion efficiency of 1 embodiment of table and comparative example under a sun light intensity
In Fig. 1 display embodiment 2 and comparative example under the conditions of 85 DEG C, microscopic appearance figure in different time periods.Wherein (a)-
It (d) is comparative example, (e)-(h) is embodiment 2, it can be found that the perovskite solution for having TBA-I to adulterate is by certain from figure
After the heat treatment of time, the perovskite structure of two dimension, three-dimensional hybrid can be formed, after being placed 24 hours under the conditions of 85 DEG C,
There is a little white phase to occur and perpendicular to initial black crystal face, after placing 48 hours, white phase amount starts to become more and vertical
Directly in black crystal face, after placing 72 hours, white phase amount increased significantly and all perpendicular to black crystal face, it follows that passing through
TBA adulterates the thermal stability and humidity stability for improving battery.
Fig. 2 shows X-ray diffractogram of the embodiment 1 into embodiment 3 and comparative example under different levels of doping, wherein z
Film has stronger diffracted intensity under=0.025 (TBA doping concentration is 2.5%) situation, this shows the TBA doping of debita spissitudo
Play the role of promoting Perovskite Phase at phase, perfect Perovskite Phase can be very good to improve the film pattern of perovskite, and then can be with
Good interfacial contact is formed with electrode, is had very great help to the raising of battery efficiency.
Fig. 3 shows the light of the humidity stability of perovskite solar battery into embodiment 3 and comparative example of embodiment 1
Photoelectric transformation efficiency monitoring curve.It can be seen that having fallen to the 80% of initial value without the comparative example efficiency for adding TBA.
Fig. 4 is that embodiment 1 handles about 300h perovskite solar battery into embodiment 3 and comparative example at 85 DEG C
Thermal stability photoelectric conversion efficiency monitoring curve.It can be seen that the efficiency value of comparative example has been significantly lower than just in 300h or so
Beginning efficiency value, and the battery efficiency value of the doping containing TBA maintains on starting efficiency value.
Fig. 5 be embodiment 1 to embodiment 3 and comparative example under a light intensity in 1000s electric current change over time it is steady
State curve of output.As can be seen that have TBA-I adulterate perovskite solar battery electric current can with the extension of light application time,
There is the trend increased in electric current, that is to say, that the perovskite solar battery of TBA-I doping has better light durability.
Claims (8)
1. a kind of perovskite light absorbing material, which is characterized in that the chemical composition of the perovskite light absorbing material is
[(CH3CH2CH2CH2)4N]z(A)1-zYX3, wherein A is organic or inorganic cation, preferably CH3NH3 +、NH2-CH=NH2 +、Cs+、
Li+、C4H9NH3 +、CH6N3 +、Na+、K+At least one of, Y Pb2+、Sn2+、Ge2+、Co2+、Fe2+、Mn2+、Cu2+And Ni2+In
At least one, X Cl‒、Br‒、I‒、SCN-、BF4 -At least one of, the range of z is 0≤z < 1.
2. perovskite light absorbing material according to claim 1, which is characterized in that 0.0125≤z≤0.05.
3. a kind of perovskite light absorbing layer, which is characterized in that contain perovskite light absorbing material of any of claims 1 or 2.
4. a kind of preparation method of perovskite light absorbing layer as claimed in claim 3, which is characterized in that including：It will
[(CH3CH2CH2CH2)4N]z(A)1-zYX3Precursor solution is coated in substrate, is heat-treated, obtains perovskite light absorption
Layer.
5. the preparation method according to claim 4, which is characterized in that the [(CH3CH2CH2CH2)4N]z(A)1-zYX3Forerunner
Liquid solution obtains and mixing by dispersing the halide of the halide of tetrabutyl ammonium halide, A and Y in solvent.
6. preparation method according to claim 4 or 5, which is characterized in that the treatment temperature 80~100 of the heat treatment
DEG C, the processing time is 40 minutes~60 minutes.
7. a kind of perovskite solar battery, which is characterized in that contain perovskite light absorbing layer as claimed in claim 3.
8. perovskite solar battery according to claim 7, which is characterized in that the perovskite solar battery is under
Successively include upwards：Conductive substrates, electron transfer layer, mesoporous layer, the perovskite light absorbing layer and back electrode.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470391A (en) * | 2015-11-23 | 2016-04-06 | 中国科学院上海硅酸盐研究所 | Organic inorganic hybrid perovskite film and manufacturing method of perovskite solar cell |
| CN106098943A (en) * | 2016-06-27 | 2016-11-09 | 华北电力大学 | A kind of high stable mixing dimension perovskite material and application |
| CN106784328A (en) * | 2016-12-31 | 2017-05-31 | 中国科学院上海硅酸盐研究所 | High-performance perovskite thin film and preparation method thereof and solar cell |
-
2018
- 2018-06-30 CN CN201810703036.4A patent/CN108899425A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470391A (en) * | 2015-11-23 | 2016-04-06 | 中国科学院上海硅酸盐研究所 | Organic inorganic hybrid perovskite film and manufacturing method of perovskite solar cell |
| CN106098943A (en) * | 2016-06-27 | 2016-11-09 | 华北电力大学 | A kind of high stable mixing dimension perovskite material and application |
| CN106784328A (en) * | 2016-12-31 | 2017-05-31 | 中国科学院上海硅酸盐研究所 | High-performance perovskite thin film and preparation method thereof and solar cell |
Non-Patent Citations (2)
| Title |
|---|
| ISABELLA POLI ET AL.: ""Tetrabutylammonium cations for moistureresistant and semitransparent perovskite solar cells"", 《JOURNAL OF MATERIALS CHEMISTRY A》 * |
| MICHAEL SALIBA ET AL.: ""Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency"", 《ENERGY & ENVIRONMENTAL SCIENCE》 * |
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