CN108899389A - It is a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip - Google Patents
It is a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip Download PDFInfo
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- CN108899389A CN108899389A CN201810628308.9A CN201810628308A CN108899389A CN 108899389 A CN108899389 A CN 108899389A CN 201810628308 A CN201810628308 A CN 201810628308A CN 108899389 A CN108899389 A CN 108899389A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052681 coesite Inorganic materials 0.000 claims description 19
- 229910052906 cristobalite Inorganic materials 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 229910052682 stishovite Inorganic materials 0.000 claims description 19
- 229910052905 tridymite Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical group [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 11
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000001228 spectrum Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention belongs to detector chip technical fields, specially a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip.InGaAs detector chip of the present invention is in its indium phosphide（InP）Substrate structure is followed successively by：InP contact layer, InGaAs absorbed layer, silica（SiO2）Dielectric layer, graphene layer, upper metal electrode and lower metal electrode.One aspect of the present invention graphene shows good semimetal characteristic, contacts with InGaAs layers and is capable of forming Schottky photo diode, realizes optical detection；The optical transmission of another aspect graphene is all fabulous, can increase the light absorption of InGaAs layer material；In addition, InGaAs material can absorb 1.7 μm of light to ultraviolet band, so the InGaAs detector can be realized the ultraviolet wide spectrum to near-infrared and detect.
Description
Technical field
The invention belongs to detector chip technical fields, and in particular to a kind of graphene-based ultraviolet-visible-near-infrared
InGaAs detector chip.
Background technique
The traditional structure of indium gallium arsenic detector chip is indium phosphide（InP）/ indium gallium arsenic（InGaAs）/ indium phosphide（InP）Knot
Structure possesses good performance near infrared band, this has it widely in civilian, military and aerospace field
Application value.The absorption of InGaAs material is located near infrared band by wavelength, it means that the absorption spectra energy of InGaAs material
Enough covering wavelength are less than the visible light even ultraviolet light of near-infrared, but due to the absorption of InP substrate and InP cap layers, press down
Detection of the InP/InGaAs/InP detector to visible light, ultraviolet band has been made, has caused traditional InGaAs detector that can not visit
Ultraviolet, visible waveband target is surveyed, can not identify the shorter laser of some widely applied wavelength.In addition, for certain needs
The application for detecting ultraviolet light, visible light and short-wave infrared simultaneously, needs multiple isolated detectors to be detected respectively, causes to visit
The disadvantages of examining system is complicated, system dimension and larger weight.Therefore a kind of new structural broadband indium gallium arsenic detector is needed,
It can either realize that near infrared light detects, and Uv and visible light wave band can be detected.
Summary of the invention
Based on tradition InGaAs detector mentioned above there are the problem of and growth requirement, it is an object of the invention to propose
It is a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip.
It is proposed by the present invention graphene-based ultraviolet to near-infrared InGaAs detector chip, it is to be detected in traditional InGaAs
Device carries out structure and technological improvement on basis, first with grapheme material instead of InP cap layers material；Secondly using heterogeneous
Junction Schottky structure.The detector chip can not only detect the near infrared region of traditional InGaAs detector covering, Er Qieneng
It is enough that detecting band is extended into visible and ultraviolet band, it is detected while realizing ultraviolet, visible and near infrared region.
Proposed by the present invention graphene-based ultraviolet to near-infrared InGaAs detector chip, the schematic diagram of the section structure is as schemed
Shown in 1, it is by InP substrate 1, InP contact layer 2, InGaAs absorbed layer 3, SiO2Dielectric layer 4, graphene layer 5, upper metal electrode 6
It is formed with lower metal electrode 7；Wherein, InP contact layer 2 and InGaAs absorbed layer 3 by epitaxy technology be grown in InP substrate it
On；SiO2Dielectric layer 4 is deposited on InGaAs layer 3；By semiconductor technologies such as lithography and etchings in SiO2It is provided on dielectric layer 4
Square hole, the transfer of graphene 5 is on square hole and covers square hole；On source electrode 6 vapor deposition of metal electrode square hole or so or on
On the graphene 5 of lower two sides；Lower metal electrode 7 is deposited on the InP contact layer 2 being etched out.
In the present invention, the SiO2Dielectric layer 4 with a thickness of 90nm ~ 300nm.
In the present invention, the atom number of plies of the graphene layer 5 is：1 ~ 5 layer；Graphene layer 5 and 3 shape of InGaAs layer in hole
At good heterojunction.
In the present invention, the upper metal electrode 6) it is Ti/Pt/Au metal electrode, good ohm is formed with graphene layer 5
Contact.
In the present invention, the lower metal electrode 7 forms good Europe between Cr/Au metal electrode, with InP contact layer 2
Nurse contact.
The preparation method of InGaAs detector chip of the present invention, step is as shown in Fig. 2, including：（1）Sampling cleaning,
（2）Deposit SiO2Dielectric layer 4,（3）Opening square hole is etched,（4）Graphene 5 is shifted,（5）Etched open lower contact electrode layer,（6）Deposit
Metal electrode.Specific step is as follows：
（1）Sampling cleaning：8 ~ 3mins of sample is successively cleaned by ultrasonic using acetone, ethyl alcohol and deionized water；
（2）Deposit SiO2Dielectric layer 4：Plasma enhanced CVD（PECVD）Deposition techniques thickness 300nm ~ 90nm
SiO2Dielectric layer, underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W；
（3）Etch opening square hole：Using inductively coupled plasma (ICP) lithographic technique in SiO2Opening square hole on dielectric layer 4, etching
Condition is：ICP power be 1500W, RF power be 25 ~ 50W, chamber pressure 9.4mTorr, temperature are 5 DEG C；
（4）Shift graphene 5：Using dry method transfer techniques, will with a thickness of the graphene of 1 ~ 5 atomic layer, be transferred to square hole it
On, entire square hole is covered, and graphene 5 is contacted with InGaAs layers of absorbed layer 3；
（5）Etched open gate electrode contact layer：It is performed etching using Ar ion etching technology, etching condition is：Ion energy 150~
400eV, 40~80cm of line-3；
（6）Deposit metal electrode：Metal electrode is deposited using ion beam sputtering process, vacuum degree is 2~5 × 10-2Pa, ion
Beam energy is 80 eV ~ 250eV.
The advantage of the invention is that：
A, novel I nGaAs detector chip is to form Xiao using advanced two-dimensional graphene material and InGaAs body material
Te Jite photodiode realizes two dimension and three-dimensional combination, and is able to achieve spectrographic detection；
B, novel I nGaAs detector chip has used the advanced two-dimensional graphene material that forbidden bandwidth is zero and translucency is fabulous
Material, so that broader spectrum and more photons by InGaAs layer absorption, have widened the spectrum of detector to ultraviolet, while can be with
Improve the photoresponse of detector；
C, novel I nGaAs detector chip has used advanced two-dimensional graphene material, so that the preparation of the new detector
Technique is simpler, and preparation cost is lower.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is preparation technology flow chart of the invention.
Figure label：1 is InP substrate；2 be InP contact layer；3 be InGaAs absorbed layer；4 be SiO2Dielectric layer；5 be stone
Black alkene layer；6 be upper Metal contact electrode；7 be lower Metal contact electrode.
Specific embodiment
Specific implementation method of the invention is described in detail with reference to the accompanying drawing.As shown in Fig. 2, the tool of the present embodiment
Body technology process is as follows.
Embodiment 1
1, sampling cleaning is successively cleaned by ultrasonic 8 ~ 3mins of sample using acetone, ethyl alcohol and deionized water；
2, SiO2 dielectric layer 4, plasma enhanced CVD are deposited（PECVD）The SiO of deposition techniques thickness 90nm2It is situated between
Matter layer, underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W；
3, opening square hole is etched, using inductively coupled plasma (ICP) lithographic technique in SiO2Opening square hole on dielectric layer 4, etching
Condition is：ICP power be 1500W, RF power be 25 ~ 50W, chamber pressure 9.4mTorr, temperature are 5 DEG C；
4, graphene 5 is shifted, is transferred on square hole using dry method transfer techniques by with a thickness of the graphene of 1 atomic layer,
Entire square hole is covered, and graphene 5 is contacted with InGaAs layers of absorbed layer 3；
5, etched open gate electrode contact layer is performed etching using Ar ion etching technology, and etching condition is：Ion energy 150~
400eV, 40~80cm of line-3；
6, metal electrode is deposited, metal electrode is deposited using ion beam sputtering process, vacuum degree is 2~5 × 10-2Pa, ion beam
Energy is 80 eV ~ 250eV；
7, test result：The response wave band of detector photosensor chip covers 375nm ~ 1700nm, under photovoltaic operating mode, response
Rate is 0.8A/W, under light guide operating mode, response rate 300A/W.
Embodiment 2
1, sampling cleaning is successively cleaned by ultrasonic 8 ~ 3mins of sample using acetone, ethyl alcohol and deionized water；
2, SiO2 dielectric layer 4, plasma enhanced CVD are deposited（PECVD）The SiO of deposition techniques thickness 300nm2
Dielectric layer, underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W；
3, opening square hole is etched, using inductively coupled plasma (ICP) lithographic technique in SiO2Opening square hole on dielectric layer 4, etching
Condition is：ICP power be 1500W, RF power be 25 ~ 50W, chamber pressure 9.4mTorr, temperature are 5 DEG C；
4, graphene 5 is shifted, is transferred on square hole using dry method transfer techniques by with a thickness of the graphene of 3 atomic layers,
Entire square hole is covered, and graphene 5 is contacted with InGaAs layers of absorbed layer 3；
5, etched open gate electrode contact layer is performed etching using Ar ion etching technology, and etching condition is：Ion energy 150~
400eV, 40~80cm of line-3；
6, metal electrode is deposited, metal electrode is deposited using ion beam sputtering process, vacuum degree is 2~5 × 10-2Pa, ion beam
Energy is 80 eV ~ 250eV；
7, test result：The response wave band of detector photosensor chip covers 375nm ~ 1700nm, under photovoltaic operating mode, response
Rate is 0.85A/W, under light guide operating mode, response rate 330A/W.
Embodiment 3
1, sampling cleaning is successively cleaned by ultrasonic 8 ~ 3mins of sample using acetone, ethyl alcohol and deionized water；
2, SiO2 dielectric layer 4, plasma enhanced CVD are deposited（PECVD）The SiO of deposition techniques thickness 300nm2
Dielectric layer, underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W；
3, opening square hole is etched, using inductively coupled plasma (ICP) lithographic technique in SiO2Opening square hole on dielectric layer 4, etching
Condition is：ICP power be 1500W, RF power be 25 ~ 50W, chamber pressure 9.4mTorr, temperature are 5 DEG C；
4, graphene 5 is shifted, is transferred on square hole using dry method transfer techniques by with a thickness of the graphene of 5 atomic layers,
Entire square hole is covered, and graphene 5 is contacted with InGaAs layers of absorbed layer 3；
5, etched open gate electrode contact layer is performed etching using Ar ion etching technology, and etching condition is：Ion energy 150~
400eV, 40~80cm of line-3；
6, metal electrode is deposited, metal electrode is deposited using ion beam sputtering process, vacuum degree is 2~5 × 10-2Pa, ion beam
Energy is 80 eV ~ 250eV；
7, test result：The response wave band of detector photosensor chip covers 375nm ~ 1700nm, under photovoltaic operating mode, response
Rate is 0.78A/W, under light guide operating mode, response rate 280A/W.
Claims (5)
1. a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip, which is characterized in that by InP substrate（1）, InP connects
Contact layer（2）, InGaAs absorbed layer（3）,SiO2Dielectric layer（4）, graphene layer（5）, upper metal electrode（6）With lower metal electrode
（7）Composition；Wherein, InP contact layer（2）With InGaAs absorbed layer（3）It is grown on InP substrate by epitaxy technology；SiO2
Dielectric layer（4）It is deposited on InGaAs layers（3）On；By semiconductor technologies such as lithography and etchings in SiO2Dielectric layer（4）On be provided with
Square hole, graphene layer（5）Transfer is on square hole and covers square hole；Metal electrode on source electrode（6）Vapor deposition is in square hole or so
Or the graphene layer of upper and lower two sides（5）On；Lower metal electrode（7）It is deposited on the InP contact layer being etched out（2）On.
2. InGaAs detector chip according to claim 1, which is characterized in that the SiO2Dielectric layer（4）Thickness
For 90nm ~ 300nm.
3. InGaAs detector chip according to claim 1, which is characterized in that the graphene layer（5）Atom
The number of plies is：1 ~ 5 layer；Graphene layer in hole（5）With InGaAs layers（3）Form good heterojunction.
4. InGaAs detector chip according to claim 1, which is characterized in that the upper metal electrode（It 6) is Ti/
Pt/Au metal electrode, with graphene layer（5）Form good Ohmic contact.
5. InGaAs detector chip according to claim 1, which is characterized in that the lower metal electrode（7）For Cr/
Au metal electrode, with InP contact layer（2）Between form good Ohmic contact.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810628308.9A CN108899389A (en) | 2018-06-19 | 2018-06-19 | It is a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip |
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| CN201810628308.9A CN108899389A (en) | 2018-06-19 | 2018-06-19 | It is a kind of graphene-based ultraviolet to near-infrared InGaAs detector chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786556A (en) * | 2018-12-14 | 2019-05-21 | 华南理工大学 | A kind of heterojunction solar battery and preparation method comprising hole transmission layer |
| CN110808307A (en) * | 2019-10-12 | 2020-02-18 | 复旦大学 | Based on metal phase MoTe2The wide spectrum InGaAs detector and its preparation method |
| WO2020192569A1 (en) * | 2019-03-27 | 2020-10-01 | Nanjing University | Schottky-type heterojunction structure, method of making the same and schottky barrier diode device including the same |
| CN114041210A (en) * | 2019-07-04 | 2022-02-11 | 三菱电机株式会社 | Electromagnetic wave detector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994095A (en) * | 2017-12-06 | 2018-05-04 | 中国科学院上海技术物理研究所 | A kind of high-gain is ultraviolet to near-infrared InGaAs detector chips |
-
2018
- 2018-06-19 CN CN201810628308.9A patent/CN108899389A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994095A (en) * | 2017-12-06 | 2018-05-04 | 中国科学院上海技术物理研究所 | A kind of high-gain is ultraviolet to near-infrared InGaAs detector chips |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786556A (en) * | 2018-12-14 | 2019-05-21 | 华南理工大学 | A kind of heterojunction solar battery and preparation method comprising hole transmission layer |
| WO2020192569A1 (en) * | 2019-03-27 | 2020-10-01 | Nanjing University | Schottky-type heterojunction structure, method of making the same and schottky barrier diode device including the same |
| CN114041210A (en) * | 2019-07-04 | 2022-02-11 | 三菱电机株式会社 | Electromagnetic wave detector |
| CN110808307A (en) * | 2019-10-12 | 2020-02-18 | 复旦大学 | Based on metal phase MoTe2The wide spectrum InGaAs detector and its preparation method |
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