CN108899374A - 一种硅基太阳能电池及其制备方法 - Google Patents
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Abstract
本申请公开了一种硅基太阳能电池及其制备方法,该太阳能电池包括:硅衬底,在硅衬底的正面形成有PN结;在PN结的上方依次形成有隧穿层、石墨烯层、重掺非晶硅层、减反射层和正面电极;正面电极穿透减反射层与重掺非晶硅层直接接触;在硅衬底的背面形成有背面电极。该太阳能电池中利用石墨烯作为一种导电材料应用于太阳能电池中,利用石墨烯的高透光性和高载流子迁移率,提高了硅太阳电池的填充因子、转化效率。同时,该石墨烯层所结合的遂穿层能够起到钝化作用,并且结合重掺非晶硅层可以形成高低结以实现载流子输运,从而进一步提高了硅基太阳能电池的转换效率。
Description
技术领域
本申请涉及太阳能技术领域,尤其涉及一种硅基太阳能电池及其制备方法。
背景技术
随着全球经济发展,对能源需求日益增长,而煤等化石能源储量有限必然会逐渐枯竭,发展新能源迫在眉睫。太阳能作为地球生命之源,一种近乎于无限储量的能源,一直是新能源中的首选。到达地球的太阳能功率极其巨大,可达173,000TW,相当于每秒提供500万吨煤炭所蕴含的能量,因此,可将太阳能直接转换为电能的太阳能电池成为了人们关注重点。
在目前众多光伏发电技术中,硅基太阳能电池,特别是晶体硅基太阳能电池依旧占据了光伏市场主要份额。但与传统能源相比,由于硅基太阳能电池的转换效率不够高,导致在能源市场上不占优势。
发明内容
有鉴于此,本申请提供了一种硅基太阳能电池及其制备方法,以提高硅基太阳能电池的转换效率。
为了达到上述发明目的,本申请采用了如下技术方案:
一种硅基太阳能电池,包括:
第一导电类型的硅衬底,在所述硅衬底的正面形成有PN结;
在所述PN结的上方依次形成有隧穿层、石墨烯层、第二导电类型的重掺非晶硅层、减反射层和正面电极;所述正面电极穿透所述减反射层与所述重掺非晶硅层直接接触;
在所述硅衬底的背面形成有背面电极;
其中,所述第一导电类型与所述第二导电类型的导电类型相反。
可选地,所述石墨烯层包括1-10层石墨烯。
可选地,所述石墨烯层包括1-5层石墨烯。
可选地,所述隧穿层的厚度范围为1-20纳米。
可选地,所述重掺非晶硅层的厚度范围为70-90纳米。
可选地,所述PN结的结深范围为0.2-0.5微米。
一种硅基太阳能电池的制备方法,包括:
提供第一导电类型的硅衬底;
在所述硅衬底的正面形成PN结;
在所述PN结上依次形成隧穿层、石墨烯层、第二导电类型的重掺非晶硅层、减反射层和正面电极;所述正面电极穿透所述减反射层与所述重掺非晶硅层直接接触;
在所述硅衬底的背面形成背面电极;
其中,所述第一导电类型与所述第二导电类型的导电类型相反。
可选地,所述在所述硅衬底的正面形成PN结之前,还包括:
对所述硅衬底的正面进行制绒处理,以使所述硅衬底的正面形成绒面。
可选地,在隧穿层上形成石墨烯层具体包括:
在所述隧穿层上直接形成石墨烯层;
或者,
通过转移方法在所述隧穿层上形成石墨烯层。
可选地,所述石墨烯层包括1-10层石墨烯。
相较于现有技术,本申请具有以下有益效果:
本申请提供的硅基太阳能电池中,利用石墨烯作为一种导电材料应用于太阳能电池中,利用石墨烯的高透光性和高载流子迁移率,提高了硅太阳电池的填充因子、转化效率。同时,该石墨烯层所结合的遂穿层能够起到钝化作用,并且结合重掺非晶硅层可以形成高低结以实现载流子输运,从而进一步提高了硅基太阳能电池的转换效率。本申请提供的的硅基太阳能电池的制备,其制备成本低,工艺简单,有利于产业化应用。
附图说明
为了更加清楚地理解本申请的具体实施方式,下面将描述本申请具体实施方式时用到的附图做一简要说明。
图1是本申请实施例提供的硅基太阳能电池的结构示意图;
图2是本申请实施例提供的硅基太阳能电池能带示意图;
图3是本申请提供的一种硅基太阳能电池制备方法流程示意图;
图4是本申请提供的另一种硅基太阳能电池制备方法流程示意图;
图5是本申请提供的又一种硅基太阳能电池制备方法流程示意图;
图6是本申请提供的又一种硅基太阳能电池制备方法流程示意图;
图7是本申请提供的又一种硅基太阳能电池制备方法流程示意图。
具体实施方式
太阳能电池主要是以半导体材料为基础,其工作原理是利用光电材料吸收光能后发生光电转换反应。硅基太阳能电池是以硅材料为基础制备的。
石墨烯自2004年首次从石墨中分离出以来,优异的导电导热性能、高透光率、高杨式模量等诸多优点使得它非常适合应用于光伏领域。目前已经有研究者将石墨烯与硅材料结合形成肖特基结以作为太阳电池,测得最高效率14.5%,这与市场主流单晶硅太阳电池尚有差距。遂穿层结合选择性电场即可以实现钝化作用,又可以有效的实现载流子选择性输运,从而提高电池的转换效率。因此,本申请提出将石墨烯作为导电材料,并结合遂穿层应用于硅太阳电池中,利用石墨烯的高透光性以及高载流子迁移率等优点,实现制备成本低、工艺简单而转化效率高的太阳电池。
图1是本申请实施例提供的硅基太阳能电池的结构示意图。图2是本申请实施例提供的硅基太阳能电池能带示意图。
如图1所示,该硅基太阳能电池包括:
第一导电类型的硅衬底11,在硅衬底11的正面形成有PN结12;
在PN结12的上方依次形成有隧穿层13、石墨烯层14、第二导电类型的重掺非晶硅层15、减反射层16和正面电极17;正面电极17穿透减反射层16与重掺非晶硅层15直接接触;
在硅衬底11的背面形成有背面电极18;
其中,第一导电类型与第二导电类型的导电类型相反。具体地说,当第一导电类型为p型时,第二导电类型为n型;当第一导电类型为n型时,第二导电类型为p型。
作为示例,PN结12的结深范围为0.2-0.5微米之间。
隧穿层13可以为厚度为1-20纳米的氧化硅薄层。
石墨烯层14可以包括1-10层石墨烯,可选地,石墨烯层14可以包括1-5层石墨烯。石墨烯层14可以直接在隧穿层13上直接生长形成,也可以通过转移的方法形成。其中,转移方法具体为:首先在金属铜基底上形成石墨烯层,然后通过剥离技术将金属铜基底剥离,最后将独立的石墨烯层转移到隧穿层上。
重掺非晶硅层15的掺杂类型与PN结12相匹配,从而形成电场保证隧穿层13的选择性输运作用。
减反射层16可以为氮化硅薄层,其厚度范围在70-90纳米之间。
正面电极17和背面电极18可以由镊、金、锗、银、铝、钯、钛、铬中的一种或多种制成的电极。
本申请提供的硅基太阳能电池中,利用石墨烯作为一种导电材料应用于太阳能电池中,利用石墨烯的高透光性和高载流子迁移率,提高了硅太阳电池的填充因子、转化效率。同时,该石墨烯层所结合的遂穿层能够起到钝化作用,并且结合重掺非晶硅层可以形成高低结以实现载流子输运,从而进一步提高了硅基太阳能电池的转换效率。本申请提供的的硅基太阳能电池的制备,其制备成本低,工艺简单,有利于产业化应用。
基于上述实施例所述的硅基太阳能电池的具体实施方式,本申请实施例还提供了硅基太阳能电池的制备方法,具体参见以下实施例。
图3是本申请提供的一种硅基太阳能电池制备方法流程示意图。如图3所示,该制备方法包括:
S301、将p型单晶硅片11浸入氢氟酸与硝酸混合溶液中进行制绒处理,在p型硅衬底正面形成绒面。
S302、把制绒后的硅片11放入扩散炉进行磷扩散在硅衬底正面形成n型硅薄层12,扩散温度800℃,结深约0.2-0.5μm。
S303、通过热氧法在n型硅薄层12上方生长1-10nm厚度的氧化硅遂穿层13。
S304、将通过CVD(chemical Vapor Deposition,化学气相沉积)方法制备的单层石墨烯14转移至氧化硅遂穿层13表面。
S305、采用LPCVD(Low Pressure Chemical Vapor Deposition,低压力化学气相沉积)原位生长n型重掺非晶硅层15。
S306、采用PECVD(Plasma Enhanced Chemical Vapor Deposition,等离子体增强化学气相沉积)生长氮化硅减反射层16,厚度大约70-90nm。
S307、在硅衬底背面印刷Ag电极及Al背场浆料做背面电极18,正面镀Ag作正面电极17。
本申请实施例还提供了另一种硅基太阳能电池制备方法,具体参见图4。图4是本申请提供的另一种硅基太阳能电池制备方法流程示意图,如图4所示,该制备方法包括:
S401、将n型单晶硅片11浸入氢氟酸与硝酸混合溶液中进行制绒处理,在n型硅衬底正面形成绒面。
S402、把制绒后的硅片11放入扩散炉进行硼扩散在硅衬底正面形成p型硅薄层12,扩散温度800℃,结深约0.2-0.5μm。
S403、通过热氧法在p型硅薄层12上方生长1-10nm厚度的氧化硅遂穿层13。
S404、将通过CVD方法制备的单层石墨烯14转移至氧化硅遂穿层13表面。
S405、采用LPCVD原位生长p型重掺非晶硅层15。
S406、采用PECVD生长氮化硅减反射层16,厚度大约70-90nm。
S407、在硅片背面印刷Ag电极及Al背场浆料做背面电极18,正面镀Ag作正面电极17。
本申请实施例还提供了又一种硅基太阳能电池制备方法,具体参见图5。图5是本申请提供的又一种硅基太阳能电池制备方法流程示意图,如图5所示,该制备方法包括:
S501、将n型单晶硅片11浸入氢氟酸与硝酸混合溶液中进行制绒处理,在n型硅衬底正面形成绒面。
S502、把制绒后的硅片11放入扩散炉进行硼扩散在硅衬底正面形成p型硅薄层12,扩散温度800℃,结深约0.2-0.5μm。
S503、通过热氧法在p型硅薄层12上方生长1-10nm厚度的氧化硅遂穿层13。
S504、通过MOCVD(Metal-organic Chemical Vapor DePosition,金属有机化合物化学气相淀积)方法直接在氧化硅遂穿层13表面生长单层石墨烯14。
S505、采用LPCVD原位生长p型重掺非晶硅层15。
S506、采用PECVD生长氮化硅减反射层16,厚度大约70-90nm。
S507、在硅片背面印刷Ag电极及Al背场浆料做背面电极18,正面镀Ag作正面电极17。
本申请实施例还提供了又一种硅基太阳能电池制备方法,具体参见图6。图6是本申请提供的又一种硅基太阳能电池制备方法流程示意图,如图6所示,该制备方法包括:
S601、将p型单晶硅片11浸入四甲基氢氧化铵稀释溶液中进行制绒处理,在p型硅衬底正面形成绒面。
S602、把制绒后的硅片11放入扩散炉进行磷扩散在硅衬底正面形成n型硅薄层12,扩散温度800℃,结深约0.2-0.5μm。
S603、通过热氧法在n型硅薄层12上方生长1-10nm厚度的氧化硅遂穿层13。
S604、将通过CVD方法制备的双层石墨烯14转移至氧化硅遂穿层13表面。
S605、采用LPCVD原位生长n型重掺非晶硅层15。
S606、采用PECVD生长氮化硅减反射层16,厚度大约70-90nm。
S607、在硅片背面印刷Ag电极及Al背场浆料做背面电极18,正面镀Ag作正面电极17。
本申请实施例还提供了又一种硅基太阳能电池制备方法,具体参见图7。图7是本申请提供的又一种硅基太阳能电池制备方法流程示意图,如图7所示,该制备方法包括:
S701、将p型单晶硅片11浸入四甲基氢氧化铵稀释溶液中进行制绒处理,在p型硅衬底正面形成绒面。
S702、把制绒后的硅片11放入扩散炉进行磷扩散在硅衬底正面形成n型硅薄层12,扩散温度800℃,结深约0.2-0.5μm。
S703、通过120℃煮硝酸法在n型硅薄层12上方生长1-10nm厚度的氧化硅遂穿层13。
S704、将通过CVD方法制备的单层石墨烯14转移至氧化硅遂穿13表面。
S705、采用LPCVD原位生长n型重掺非晶硅层15。
S706、采用PECVD生长氮化硅减反射层16,厚度大约70-90nm。
S707、在硅片背面印刷Ag电极及Al背场浆料做背面电极18,正面镀Ag作正面电极17。
以上为本申请的具体实施方式。
Claims (10)
1.一种硅基太阳能电池,其特征在于,包括:
第一导电类型的硅衬底,在所述硅衬底的正面形成有PN结;
在所述PN结的上方依次形成有隧穿层、石墨烯层、第二导电类型的重掺非晶硅层、减反射层和正面电极;所述正面电极穿透所述减反射层与所述重掺非晶硅层直接接触;
在所述硅衬底的背面形成有背面电极;
其中,所述第一导电类型与所述第二导电类型的导电类型相反。
2.根据权利要求1所述的硅基太阳能电池,其特征在于,所述石墨烯层包括1-10层石墨烯。
3.根据权利要求2所述的硅基太阳能电池,其特征在于,所述石墨烯层包括1-5层石墨烯。
4.根据权利要求1-3任一项所述的硅基太阳能电池,其特征在于,所述隧穿层的厚度范围为1-20纳米。
5.根据权利要求1-3任一项所述的硅基太阳能电池,其特征在于,所述重掺非晶硅层的厚度范围为70-90纳米。
6.根据权利要求1-3任一项所述的硅基太阳能电池,其特征在于,所述PN结的结深范围为0.2-0.5微米。
7.一种硅基太阳能电池的制备方法,其特征在于,包括:
提供第一导电类型的硅衬底;
在所述硅衬底的正面形成PN结;
在所述PN结上依次形成隧穿层、石墨烯层、第二导电类型的重掺非晶硅层、减反射层和正面电极;所述正面电极穿透所述减反射层与所述重掺非晶硅层直接接触;
在所述硅衬底的背面形成背面电极;
其中,所述第一导电类型与所述第二导电类型的导电类型相反。
8.根据权利要求7所述的制备方法,其特征在于,所述在所述硅衬底的正面形成PN结之前,还包括:
对所述硅衬底的正面进行制绒处理,以使所述硅衬底的正面形成绒面。
9.根据权利要求7所述的制备方法,其特征在于,在隧穿层上形成石墨烯层具体包括:
在所述隧穿层上直接形成石墨烯层;
或者,
通过转移方法在所述隧穿层上形成石墨烯层。
10.根据权利要求7-9任一项所述的制备方法,其特征在于,所述石墨烯层包括1-10层石墨烯。
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