CN108899279A - 纳米银线结构及其制备方法、显示面板 - Google Patents
纳米银线结构及其制备方法、显示面板 Download PDFInfo
- Publication number
- CN108899279A CN108899279A CN201810704634.3A CN201810704634A CN108899279A CN 108899279 A CN108899279 A CN 108899279A CN 201810704634 A CN201810704634 A CN 201810704634A CN 108899279 A CN108899279 A CN 108899279A
- Authority
- CN
- China
- Prior art keywords
- nano
- silver thread
- silver
- film layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 208
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 111
- 239000002184 metal Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims description 58
- 239000007788 liquid Substances 0.000 claims description 31
- 238000009938 salting Methods 0.000 claims description 26
- 238000006073 displacement reaction Methods 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 150000003839 salts Chemical class 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 239000003999 initiator Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 12
- 230000001070 adhesive effect Effects 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 144
- 239000010408 film Substances 0.000 description 72
- 239000000243 solution Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- -1 acryl Chemical group 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920001707 polybutylene terephthalate Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229920000954 Polyglycolide Polymers 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001083 polybutene Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004633 polyglycolic acid Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002042 Silver nanowire Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010618 wire wrap Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810704634.3A CN108899279B (zh) | 2018-06-30 | 2018-06-30 | 纳米银线结构及其制备方法、显示面板 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201810704634.3A CN108899279B (zh) | 2018-06-30 | 2018-06-30 | 纳米银线结构及其制备方法、显示面板 |
Publications (2)
Publication Number | Publication Date |
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CN108899279A true CN108899279A (zh) | 2018-11-27 |
CN108899279B CN108899279B (zh) | 2021-03-02 |
Family
ID=64347676
Family Applications (1)
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CN201810704634.3A Active CN108899279B (zh) | 2018-06-30 | 2018-06-30 | 纳米银线结构及其制备方法、显示面板 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102844828A (zh) * | 2010-03-25 | 2012-12-26 | 耶路撒冷希伯来大学伊萨姆研发有限公司 | 光化学电极及其构造和使用 |
CN103198884A (zh) * | 2013-03-04 | 2013-07-10 | 中国科学院长春光学精密机械与物理研究所 | 全溶液加工多层结构透明导电薄膜及其制备方法 |
CN103240420A (zh) * | 2013-05-24 | 2013-08-14 | 苏州大学 | 一种金双锥结构纳米粒子的提纯方法 |
CN104934108A (zh) * | 2014-12-31 | 2015-09-23 | 重庆元石石墨烯技术开发有限责任公司 | 金属纳米线—石墨烯桥架结构复合材料及其制备方法 |
CN105278787A (zh) * | 2014-07-18 | 2016-01-27 | 三星电子株式会社 | 电极结构以及利用其的触摸检测传感器 |
CN107155365A (zh) * | 2014-08-08 | 2017-09-12 | 香港大学 | 包括金属纳米线和金属纳米粒子的传导金属网络以及制造其的方法 |
WO2017159698A1 (ja) * | 2016-03-18 | 2017-09-21 | 国立大学法人大阪大学 | 金属ナノワイヤ層が形成された基材及びその製造方法 |
-
2018
- 2018-06-30 CN CN201810704634.3A patent/CN108899279B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102844828A (zh) * | 2010-03-25 | 2012-12-26 | 耶路撒冷希伯来大学伊萨姆研发有限公司 | 光化学电极及其构造和使用 |
CN103198884A (zh) * | 2013-03-04 | 2013-07-10 | 中国科学院长春光学精密机械与物理研究所 | 全溶液加工多层结构透明导电薄膜及其制备方法 |
CN103240420A (zh) * | 2013-05-24 | 2013-08-14 | 苏州大学 | 一种金双锥结构纳米粒子的提纯方法 |
CN105278787A (zh) * | 2014-07-18 | 2016-01-27 | 三星电子株式会社 | 电极结构以及利用其的触摸检测传感器 |
CN107155365A (zh) * | 2014-08-08 | 2017-09-12 | 香港大学 | 包括金属纳米线和金属纳米粒子的传导金属网络以及制造其的方法 |
CN104934108A (zh) * | 2014-12-31 | 2015-09-23 | 重庆元石石墨烯技术开发有限责任公司 | 金属纳米线—石墨烯桥架结构复合材料及其制备方法 |
WO2017159698A1 (ja) * | 2016-03-18 | 2017-09-21 | 国立大学法人大阪大学 | 金属ナノワイヤ層が形成された基材及びその製造方法 |
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Publication number | Publication date |
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CN108899279B (zh) | 2021-03-02 |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20181127 Assignee: Bazhou Yungu Electronic Technology Co., Ltd.|Kunshan Institute of technology new flat panel display technology center Co., Ltd.|Kunshan Guoxian photoelectric Co., Ltd Assignor: The valley (Guan) Technology Co. Ltd. Contract record no.: X2019990000155 Denomination of invention: Nanometer silver wire structure, preparation method of nanometer silver wire structure, and display panel License type: Common License Record date: 20191030 |
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EE01 | Entry into force of recordation of patent licensing contract | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191213 Address after: No. 2 Xiangshan Avenue, Yongning Street, Zengcheng District, Guangzhou, Guangdong province (the core of Zengcheng economic and Technological Development Zone) Applicant after: Guangzhou Guoxian Technology Co., Ltd Address before: 065500 Hebei Langfang County Guan emerging industry demonstration area Applicant before: The valley (Guan) Technology Co. Ltd. |
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