CN108880516A - One type thyristor current foldback circuit and over-current protection method - Google Patents
One type thyristor current foldback circuit and over-current protection method Download PDFInfo
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- CN108880516A CN108880516A CN201810732744.0A CN201810732744A CN108880516A CN 108880516 A CN108880516 A CN 108880516A CN 201810732744 A CN201810732744 A CN 201810732744A CN 108880516 A CN108880516 A CN 108880516A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
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Abstract
The present invention provides a type thyristor current foldback circuit and over-current protection methods, including driving input terminal, class thyristor protection circuit, VDMOS pipe M and sampling feedback circuit；Protect structure be to be realized by a class thyristor structure, a specially PNP, a NPN pipe connect and compose, as shown in line map (T1, T2).When load current is excessive, biggish voltage can be generated on sampling resistor, will lead to the conducting of class thyristor structure.After the conducting of class thyristor structure, even if breaking control signal, it or constant conduction.VDMOS pipe gate source voltage is dragged down after the conducting of class thyristor structure, closes VDMOS pipe.The advantages that design has that trigger voltage is low, maintains electric current small, and current over pulse is small when short-circuit protection, structure type is simple, is easily integrated, and circuit is flexible.
Description
Technical field
The present invention relates to hybrid semiconductor integrated circuit designing techniques, and in particular to a type thyristor current foldback circuit
And over-current protection method.
Background technique
Universal circuit solid-state relay, switching circuit and igniting driving control system need to carry out the electric current of output loop
Limit the validity and reliability to guarantee its work, it is therefore desirable to which designing, there is the structure of overcurrent protection function to realize to defeated
The protection in circuit out, to guarantee various instrument and equipment safe and reliable operations.The overcurrent protection function of traditional thyristors circuit is realized
Mode is to seal in thyristor to carry out overcurrent protection in output loop, and the high current of output flows through the work of thyristor and thyristor
Make to need enough maintenance electric currents.Since solid-state relay, switching circuit etc. are needed in the base for maintaining original sized package substantially
Overcurrent protection function is extended on plinth, it is desirable to which overcurrent/short circuit protection structure has simple, effective, general, reliable, dimension
The features such as electric current is small is held, therefore traditional current protection technology is not able to satisfy requirement.
The technical implementation way of traditional thyristors current foldback circuit has the following disadvantages：
1, the maintenance electric current of thyristor is larger.
The case where traditional thyristors are a kind of large power semiconductor devices, are commonly used in high voltage and larger current, ruler
Very little larger, the maintenance electric current needed is larger.With switching circuit is minimized, lightweight, the requirement of defencive function, need to tie
Structure is simple and driving requires low circuit structure progress thick film integrated, can be used as general integrated protection structure and is generalized to circuit
In, therefore traditional thyristors are not easy to be integrated in small size circuit as protection circuit.
2, the realization of overcurrent/short-circuit protection function relies on fuse, and the reaction time is longer.
The realization of conventional overcurrent/short-circuit protection function relies on fuse, when output loop electric current reaches the overcurrent of setting
When electric current, fuse itself fusing to cut off electric current, protects the safe operation of circuit.But the reaction time is longer, needs hand again
Dynamic replacement fuse, the poor operability for circuit.
Summary of the invention
Problem to be solved by this invention is：Using the hydrid integrated circuit designing technique based on thick-film technique, provide
It is integrated to carry out miniaturization to overcurrent protection for one type thyristor current foldback circuit and over-current protection method；It is designed by route
Realize can state locking overcurrent/short-circuit protection function；The requirement to prime driving capability is reduced, overcurrent protection structure is enable to be used
In different systems.
In order to reach the goals above, the present invention, which adopts the following technical scheme that, is achieved：
One type thyristor current foldback circuit, including drive input terminal, class thyristor protection circuit, VDMOS pipe M and adopt
Sample feed circuit；The class thyristor protection circuit includes NPN triode T1 and PNP triode T2, the sampling feedback
Circuit includes sampling resistor R0；
The side of driving input terminal is connect with the grid of VDMOS pipe M, and source level connects to power supply, drain electrode connection sampling resistor
One end of R0；The emitter of PNP triode T2 is connect with the grid of VDMOS pipe M, the base stage and NPN triode of PNP triode T2
The collector of T1 connects, and the base stage of PNP triode T2 is connect with one end of resistance R2 with the emitter of NPN triode T1, electricity
The other end of resistance R2 is connect with the drain electrode of VDMOS pipe M；The emitter of NPN triode T1 is connect with one end of resistance R1, PNP tri-
The base stage of pole pipe T2 is connect with the side capacitor C1；The other side capacitor C1, the resistance R1 other end and the sampling resistor R0 other end with
Drive the other side connection of input terminal；Load resistance RL is in series between sampling resistor R0 and ground connection.
The Standard resistance range of the sampling resistor R0 is 1 milliohm to 10 Europe.
The over-current protection method of one type thyristor current foldback circuit, includes the following steps：
When electric current reaches scheduled overcurrent protection operating point, the voltage at the both ends sampling resistor R0, which reaches, makes thyristor structure
The threshold value thyristor structure of starting is connected after being triggered, and turns off VDMOS pipe M the voltage pull-down between grid source；If NPN triode
The base current of T1 is iB1, then its collector current is β1×iB1, β1For the amplification factor of triode, the base of PNP triode T2
Electrode current iB2Collector current β equal to NPN triode T11×iB1, thus the collector current i of PNP triode T2C2For β1β2
×iB1；β2For the amplification factor of triode；The electric current is used as the base current of NPN triode T1 again, carries out above-mentioned put again
Big process forms positive feedback；
NPN triode T1 and PNP triode T2 enter saturation state, keep its fully on；The structure is controlled once being connected
Pole processed maintains on state with regard to the positive feedback of effect out of hand, NPN triode T1 and PNP triode T2 inside always；
When load current is excessive, the voltage that can be generated on sampling resistor will lead to the conducting of class thyristor structure；Class thyristor structure is led
After logical, even if breaking control signal or constant conduction；VDMOS pipe gate source voltage is dragged down after class turn on thyristors, is made
VDMOS pipe is closed.
The invention has the advantages that：
The present invention uses the miniaturization processes of the hydrid integrated circuit based on thick-film technique, after integrating, circuit overall weight,
Volume, reliability have biggish promotion；Adopt a pair of of PNP, the similar thyristor structure of NPN triode composition realizes switching circuit
Overcurrent/short-circuit protection and lock function.The maintenance electric current of thyristor is larger, and the maintenance electric current of class thyristor structure is relatively
It is small, it solves the problems, such as to be unable to maintain that protection structure is worked normally by the weaker device of the driving capabilities such as photocell.The technology is only led to
Cross a pair of PNP, the similar thyristor structure of NPN triode composition realizes switching circuit overcurrent/short-circuit protection and lock function.Tool
Body is completed similar by the way of simple and practical two triodes interconnection in the lesser situation of driving current that prime provides
The function of thyristor.Protective current value as needed designs sampling resistor, so that forming positive feedback between PNP, NPN triode
Network is to realize the overcurrent protection under setting electric current.When electric current reaches protection operating point, the voltage at sampling resistor both ends reaches
The threshold value thyristor structure for starting thyristor structure is connected after being triggered, and turns off VDMOS pipe the voltage pull-down between grid source,
Complete the movement of overcurrent protection.By optimization capacitance-resistance matched design, guarantee to press, under lesser maintenance electric current in lower triggering,
Complete the overcurrent/short-circuit protection and lock function of switching circuit.The design is low with trigger voltage, maintains electric current small, and short circuit is protected
The advantages that current over pulse is small when shield, structure type is simple, is easily integrated, and circuit is flexible.
Detailed description of the invention
Fig. 1 class thyristor current protection technology functional block diagram；
Fig. 2 class thyristor current foldback circuit detailed schematic diagram.
Specific embodiment
Below in conjunction with drawings and examples, the present invention is described further.
The functional block diagram of circuit is as shown in Figure 1.When load current is excessive, biggish voltage can be generated on sampling resistor,
It will lead to thyristor structure conducting.After turn on thyristors, even if broken control signal, thyristor or constant conduction.It is brilliant
After brake tube conducting, the voltage between anode, cathode is very low, and then drags down VDMOS pipe gate source voltage, closes VDMOS pipe, completes
Overcurrent protection function.
Fig. 2 is current protection technology schematic diagram, circuit mainly by driving input drive part, class thyristor protection part,
VDMOS tube portion, sampling feedback part composition.By designing the resistance value of sampling resistor, so that the voltage at sampling resistor both ends reaches
To the threshold value for starting thyristor structure to realize the overcurrent protection under setting electric current.When electric current reaches scheduled overcurrent protection work
When putting, the voltage at sampling resistor both ends, which reaches after the threshold value thyristor structure for starting thyristor structure is triggered, to be connected, will
Voltage pull-down between grid source turns off VDMOS pipe.If the base current of NPN triode T1 is iB1, then its collector current is β
The base current iB2 of 1iB1, PNP triode T2 are equal to the collector current β 1iB1 of NPN triode T1, thus PNP triode T2
Collector current iC2 be 1 β 2iB1 of β；The electric current is used as the base current of NPN triode T1 again, carries out above-mentioned amplification again
Process forms positive feedback.(it is usually no more than several microseconds) in a short period of time, two pipes enter saturation state, make two
A pipe is fully on.The structure once being connected, tie up always with regard to effect out of hand, positive feedback of the pipe inside by control electrode
Hold on state.When load current is excessive, biggish voltage can be generated on sampling resistor, be will lead to class thyristor structure and led
It is logical.After the conducting of class thyristor structure, even if breaking control signal or constant conduction.It is dragged down after class turn on thyristors
VDMOS pipe gate source voltage closes VDMOS pipe.Only restarting circuit can just return recovery normal operating conditions.
Basic principle of the invention is：The protection structure is realized by a class thyristor structure, specially one
PNP, a NPN pipe connect and compose, as shown in line map (T1, T2).When load current is excessive, can be produced on sampling resistor
Raw biggish voltage will lead to the conducting of class thyristor structure.After the conducting of class thyristor structure, even if breaking control signal, it
Or constant conduction.VDMOS pipe gate source voltage is dragged down after the conducting of class thyristor structure, closes VDMOS pipe.
Resistance value by designing sampling resistor realizes the overcurrent protection under setting electric current.It is protected when electric current reaches scheduled overcurrent
When protecting operating point, the voltage at sampling resistor both ends reaches the threshold value for starting thyristor structure, and class thyristor structure is touched at this time
It is connected after hair, turns off VDMOS pipe the voltage pull-down between grid source.If the base current of NPN triode T1 is iB1, then it collects
Electrode current is β1×iB1, the base current i of PNP triode T2B2Collector current β equal to NPN triode T11×iB1, because
And the collector current i of PNP triode T2C2For β1β2×iB1；The electric current is used as the base current of NPN triode T1 again, further
It is secondary to carry out above-mentioned amplification process, form positive feedback.(it is usually no more than several microseconds) in a short period of time, two pipes enter
Class thyristor structure is connected in saturation state.Class thyristor structure once be connected, control electrode with regard to effect out of hand, pipe according to
Positive feedback close to the inner portion maintains on state always, turns off output.
Finally it should be noted that：The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, to the greatest extent
Invention is explained in detail referring to above-described embodiment for pipe, those of ordinary skills in the art should understand that：Still
It can be with modifications or equivalent substitutions are made to specific embodiments of the invention, and without departing from any of spirit and scope of the invention
Modification or equivalent replacement, are intended to be within the scope of the claims of the invention.
Claims (3)
1. a type thyristor current foldback circuit, which is characterized in that including driving input terminal, class thyristor protection circuit,
VDMOS pipe M and sampling feedback circuit；The class thyristor protection circuit includes NPN triode T1 and PNP triode T2, institute
The sampling feedback circuit stated includes sampling resistor R0,
The side of driving input terminal is connect with the grid of VDMOS pipe M, and source level connects to power supply, drain electrode connection sampling resistor R0's
One end；The emitter of PNP triode T2 is connect with the grid of VDMOS pipe M, and the base stage of PNP triode T2 is with NPN triode T1's
Collector connection, the base stage of PNP triode T2 are connect with one end of resistance R2 with the emitter of NPN triode T1, resistance R2
The other end connect with the drain electrode of VDMOS pipe M；The emitter of NPN triode T1 is connect with one end of resistance R1, PNP triode
The base stage of T2 is connect with the side capacitor C1；The other side capacitor C1, the resistance R1 other end and the sampling resistor R0 other end with driving
The other side of input terminal connects；Load resistance RL is in series between sampling resistor R0 and ground connection.
2. type thyristor current foldback circuit according to claim 1, which is characterized in that the sampling resistor R0
Standard resistance range be 1 milliohm to 10 Europe.
3. the over-current protection method of type thyristor current foldback circuit as claimed in claim 1 or 2, which is characterized in that
Include the following steps：
When electric current reaches scheduled overcurrent protection operating point, the voltage at the both ends sampling resistor R0, which reaches, starts thyristor structure
Threshold value thyristor structure be triggered after be connected, by the voltage pull-down between grid source make VDMOS pipe M turn off；If NPN triode T1's
Base current is iB1, then its collector current is β1×iB1, β1For the amplification factor of triode, the base stage electricity of PNP triode T2
Flow iB2Collector current β equal to NPN triode T11×iB1, thus the collector current i of PNP triode T2C2For β1β2×
iB1；β2For the amplification factor of triode；The electric current is used as the base current of NPN triode T1 again, carries out above-mentioned amplification again
Process forms positive feedback；
NPN triode T1 and PNP triode T2 enter saturation state, keep its fully on；The structure is once connected, control electrode
With regard to effect out of hand, the positive feedback of NPN triode T1 and PNP triode T2 inside maintains on state always；When negative
When load electric current is excessive, the voltage that can be generated on sampling resistor will lead to the conducting of class thyristor structure；It is connected in class thyristor structure
Afterwards, even if breaking control signal or constant conduction；VDMOS pipe gate source voltage is dragged down after class turn on thyristors, makes VDMOS
Pipe is closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810732744.0A CN108880516A (en) | 2018-07-05 | 2018-07-05 | One type thyristor current foldback circuit and over-current protection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810732744.0A CN108880516A (en) | 2018-07-05 | 2018-07-05 | One type thyristor current foldback circuit and over-current protection method |
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| CN108880516A true CN108880516A (en) | 2018-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810732744.0A Pending CN108880516A (en) | 2018-07-05 | 2018-07-05 | One type thyristor current foldback circuit and over-current protection method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880736A (en) * | 2019-11-14 | 2020-03-13 | 天津航空机电有限公司 | Current-limiting protection circuit based on double-triode positive feedback |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709870A (en) * | 2012-06-13 | 2012-10-03 | 青岛海信电器股份有限公司 | Power supply protection circuit and electronic product |
| CN205377012U (en) * | 2016-03-04 | 2016-07-06 | 厦门彼格科技有限公司 | Reduce laser drive circuit structure of consumption |
| CN205986093U (en) * | 2016-06-28 | 2017-02-22 | 深圳市嘉力电气技术有限公司 | Short -circuit protection circuit and have this short -circuit protection circuit's switching power supply |
| CN106486963A (en) * | 2016-11-25 | 2017-03-08 | 西安微电子技术研究所 | A kind of star Flouride-resistani acid phesphatase self-recovering type excessively stream/short-circuit protection circuit |
-
2018
- 2018-07-05 CN CN201810732744.0A patent/CN108880516A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709870A (en) * | 2012-06-13 | 2012-10-03 | 青岛海信电器股份有限公司 | Power supply protection circuit and electronic product |
| CN205377012U (en) * | 2016-03-04 | 2016-07-06 | 厦门彼格科技有限公司 | Reduce laser drive circuit structure of consumption |
| CN205986093U (en) * | 2016-06-28 | 2017-02-22 | 深圳市嘉力电气技术有限公司 | Short -circuit protection circuit and have this short -circuit protection circuit's switching power supply |
| CN106486963A (en) * | 2016-11-25 | 2017-03-08 | 西安微电子技术研究所 | A kind of star Flouride-resistani acid phesphatase self-recovering type excessively stream/short-circuit protection circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110880736A (en) * | 2019-11-14 | 2020-03-13 | 天津航空机电有限公司 | Current-limiting protection circuit based on double-triode positive feedback |
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Application publication date: 20181123 |