CN108879324A - Vertical cavity surface emitting laser - Google Patents
Vertical cavity surface emitting laser Download PDFInfo
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- CN108879324A CN108879324A CN201810709035.0A CN201810709035A CN108879324A CN 108879324 A CN108879324 A CN 108879324A CN 201810709035 A CN201810709035 A CN 201810709035A CN 108879324 A CN108879324 A CN 108879324A
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- layer
- hole
- reflecting layer
- cavity surface
- surface emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
Abstract
The present embodiment discloses a kind of vertical cavity surface emitting laser, which is characterized in that including：Substrate；First reflecting layer, arrangement is on the substrate；Mobile layer is arranged on first reflecting layer；Oxide layer is arranged in the mobile layer, and includes the first hole at its center；Second reflecting layer is arranged in the oxide layer and first hole；And first electrode, it is arranged on second reflecting layer, wherein second reflecting layer includes stage portion, and the stage portion is arranged on first hole.
Description
Technical field
The present embodiment is related to a kind of vertical cavity surface emitting laser.
Background technique
The major progress for the vertical cavity surface emitting laser (VCSEL) being commercially used at present is opened by introducing oxide
Mouthful (oxide aperture) is realized.
Oxide aperture is formed by following oxidation process, that is, the N of high temperature is exposed to when AlGaAs layers2And H2O's is mixed
When closing in gas atmosphere, H2O molecule spreads in AlGaAs layers and chemically reacts with AlGaAs material, as a result, passes through
AlGaAs material is converted into AlOx:The oxidation process of As form, to form oxide aperture.This chemical oxidation of gold is strong
Dependent on treatment conditions such as Al content, vapor content, reaction chamber temperature and crystallography in AlGaAs layers, therefore, it is difficult to control oxygen
The shape and size of compound opening in a lateral direction.Accordingly, there exist be difficult to be formed uniformly oxide on the same wafer to open
The problem of mouth.
In order to overcome these problems, reproduced by the temperature uniformity and temperature of wet oxidation processing apparatus to make so far
Very big effort out.
Although currently, accurately controlling the formation of oxide aperture, root using expensive business manufacturing process equipment
This problem not yet solves, and only the production cost increases.Also, even if there is also at least 1 μm or more to generate using this precision apparatus
The problem of error.[referring to M.Grabherr, D.Wiedenmann, R.Jaeger, and R.King, " Fabrication and
performance of tunable single-mode VCSELs emitting in the 750 to 1000nm
Range, " Proc.SPIE 5737,120-128 (2005)] it is opened due to the oxide of general vertical cavity surface emitting laser element
The diameter of mouth is about 5~10 μm, therefore 1 μm of fabrication error can significant reduction element characteristic yield.
In addition, must carry out oxidation processes one by one to accurately control, therefore that there are operating efficiencies is extremely low
The problem of.
Summary of the invention
The technical problem to be solved in the present invention
The present embodiment provides the vertical cavity surface emitting lasers with uniform oxide aperture.
The present embodiment provides can be by terminating the formation of oxide aperture automatically come easily and securely control oxide
The manufacturing method of the vertical cavity surface emitting laser of opening.
It further include being solved the problems, such as from following it should be understood that solve the problems, such as to be not limited to these problems in the present embodiment
Scheme or the purpose and effect that are understood that of embodiment.
Technical solution
The vertical cavity surface emitting laser of an embodiment according to the present invention includes：Substrate；First reflecting layer is arranged in institute
It states on substrate；Laser cavity, by being arranged in, the mobile layer on first reflecting layer is at its center；Oxide layer is arranged in institute
It states in mobile layer laser cavity at its center, and includes the first hole at its center；Second reflecting layer is arranged in the oxygen
Change on layer and the first hole；And first electrode, it is arranged on second reflecting layer, wherein second reflecting layer includes step
Portion, the stage portion are arranged on first hole.
Second reflecting layer may include multiple first sublayers and multiple second sublayers, multiple first sublayers and more
A second sublayer can be alternately arranged, and the refractive index of first sublayer can be higher than the refractive index of second sublayer.
Closer to the first electrode, the width of the stage portion can be narrower in second reflecting layer.
Second reflecting layer may include being formed in outermost first groove, and the diameter of first groove can be small
Diameter in first hole.
The vertical cavity surface emitting laser may include cap layers, and the cap layers are arranged in the oxide layer and described second
Between reflecting layer；
The cap layers may include extension, and the extension extends to the inner sidewall in first hole.
The thickness of the extension can be less than the thickness of the insulating layer.
The vertical cavity surface emitting laser may also include second electrode, and the second electrode is arranged under the substrate
Portion.
The first electrode may include the second hole being disposed centrally therein, and the diameter in first hole can be greater than described
The diameter in the second hole.
Beneficial effect
According to the present embodiment, the oxidation operation due to forming oxide aperture terminates automatically, can improve wet type oxygen
The unstability of chemical industry sequence.
Also, although using the wet oxidation processing apparatus of low price, can also be very easy to and steadily control oxide
The size of opening, and tens of chips can be handled simultaneously in a process.
Therefore, the simplified manufacturing process of vertical cavity surface emitting laser can be made, and process throughput can mention significantly
It is high.Also, the size of oxide aperture adjusts yield and can significantly improve.
Various beneficial advantages and effect of the invention are not limited to above content, and can describe it is of the invention specific
It is more easily to understand during embodiment.
Detailed description of the invention
Fig. 1 is the concept map according to the laser diode of one embodiment of the invention.
Fig. 2 is the partial enlargement figure of Fig. 1.
Fig. 3 is the attached drawing for showing the method that oxide aperture is formed in existing semiconductor element.
Fig. 4 is the first variation of Fig. 2.
Fig. 5 is the second variation of Fig. 2.
Fig. 6 is the third variation of Fig. 2.
Fig. 7 is in the laser diode of embodiment according to the present invention to the central part of the element of not oxide skin(coating)
Illumination field carries out calculated reflectivity chart.
Fig. 8 is the catadioptric rate for the calculating of laser diode for showing embodiment according to the present invention and the figure of electric field strength
Table.
Fig. 9 is the chart to the phase shift angle of the laser diode of embodiment according to the present invention.
Figure 10 a to Figure 10 k is the attached drawing for showing the manufacturing method of laser diode of an embodiment according to the present invention.
Figure 11 a to Figure 11 c is the attached drawing for showing the manufacturing method of laser diode of another embodiment of the present invention.
Specific embodiment
The present invention can carry out numerous variations, can have variform, show specific embodiment by attached drawing and at this
It is described in detail in text.But the present invention is not limited to specifically disclose form, it should be understood that including belonging to the present invention
Thought and the having altered of technical solution, equipollent and sub.
It should be understood that although each unit, these units can be described using term first, second etc. here
It should not be limited by these terms.These terms are used only for distinguishing a unit with another.For example, not departing from this
The case where scope of disclosure, first unit are properly termed as second unit, and similarly, and it is single that second unit is properly termed as first
Member.Term "and/or" includes the combination or any one of multiple associated listed items of multiple associated listed items.
It should be understood that when a unit be referred to as " being connected with another unit " when, the unit can directly with it is another
A unit is connected, or there may also be insertion units.In contrast, when a unit be referred to as " directly with another list
Member is connected " when, then there is no insertion units.
Term used in the present specification for illustrating specific embodiment, and and the non-limiting present invention.As long as in sentence
It is not mentioned especially in son, singular type also includes complex number type.The expression of the terms such as " comprising " used in this specification, " having " has
The feature recorded in specification, number, step, work, constituent element, component or combinations thereof product, but should not be understood as excluding
The presence or attached of other one or more features or number, step, work, constituent element, component or combinations thereof product
Add possibility.
If without separately defining, all terms including technology or scientific words are indicated and the neck of technology belonging to the present invention
The those of ordinary skill's in domain is generally understood the identical meaning.The term that usually used predefined is crossed should be interpreted that and phase
The consistent meaning of the meaning of the context of pass technology shall not be construed as ideal or excessive if undefined in the present invention
The meaning of formality.
The embodiment of the present invention will be described in detail by referring to the drawings below, wherein do not consider figure number, be endowed identical
Those of appended drawing reference component, be it is identical or correspondingly, and redundant explanation be omitted.
Fig. 1 is according to the concept map of the laser diode of one embodiment of the invention, and Fig. 2 is the partial enlargement figure of Fig. 1, Fig. 3
For the attached drawing for showing the method for forming oxide aperture in existing semiconductor element, Fig. 4 is the first variation of Fig. 2, and Fig. 5 is
The second variation of Fig. 2, Fig. 6 are the third variation of Fig. 2.
Referring to Figures 1 and 2, include according to the laser diode of the present embodiment：Substrate 10；First reflecting layer 20, is arranged in institute
It states on substrate 10；Laser cavity 30, the mobile layer being arranged on the first reflecting layer 20 are located at the center of the laser cavity 30；Oxide layer
51, include the first hole h1 at its center；Second reflecting layer 40 is arranged in the oxide layer 51 and the first hole h1；And the
One electrode 71 is arranged on second reflecting layer 40；And second electrode 11, it is arranged in the lower part of substrate 10.
Laser cavity 30 can refer to the whole region between the first reflecting layer 20 and the second reflecting layer 40.Mobile layer can be in thickness
Degree side is upwardly arranged at the center of laser cavity 30.As an example, multiple semiconductor layers can be further arranged in the upper of mobile layer
Portion and lower part, however, the present invention is not limited thereto.
Stacking half general structure can by Metalorganic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE), point
Beamlet extension (MBE) etc. manufactures, however, the present invention is not limited thereto.
Substrate 10 can be semi-insulating or electrically-conductive backing plate.As an example, substrate 10 is the GaAs base with high-dopant concentration
Plate, and doping concentration can be about 1 × 1017cm-3~1 × 1019cm-3.It as needed, can on the substrate 10 further
Arrange such as AlGaAs or GaAs film semiconductor buffer layer, however, the present invention is not limited thereto.
First reflecting layer 20 may include the distributed Bragg reflector (DBR) with n-type superlattice structure.First is anti-
Penetrating layer 20 can be by the epitaxial deposition of the technologies such as Metalorganic chemical vapor deposition as described above, molecular beam epitaxy in substrate 10
On.
First reflecting layer 20 can execute internal reflection function in vertical-cavity surface emitting laser structure.First reflecting layer
20 can be formed by being alternately stacked multiple 1-1 layers 21 and multiple 1-2 layers 22.1-1 layer 21 and 1-2 layer 22 all may be used
To be AlGaAs, but the aluminium of 1-1 layer 21 composition can be higher.
The 1-1 layer 21 and 1-2 layer 22 for constituting the first reflecting layer 20, which preferably have, passes through vertical cavity surface emitting laser
About 1/4 effective optical thickness of the wavelength of the light of generation, also, if it would be possible, for vertical cavity surface emitting laser
High internal reflection, preferably generally with about 100% reflectivity.
The reflectivity in the first reflecting layer 20 can depend on constituting the 1-1 layer 21 and 1-2 inside the first reflecting layer 20
The stacking number of refringence and 1-1 layer 21 and 1-2 layer 22 between layer 22.Therefore, in order to obtain high reflectance, refractive index
Poor bigger and stacking number is fewer, better.
Also, in order to reduce resistance, arrange between 1-1 layer 21 and 1-2 layer 22 by 1-1 layer 21 and 1-2 layers
22 Al component ratio is one-dimensional or the AlGaAs layer of the Al gradation of two-dimentional consecutive variations.
Laser cavity 30 may include one or more quantum well layers and barrier layer.Quantum well layer can by selected from GaAs,
Any one of AlGaAs, AlGaAsSb, InAlGaAs, AlInGaP, GaAsP or InGaAsP formation, barrier layer can be by selecting
From any shape in AlGaAs, InAlGaAs, InAlGaAsP, AlGaAsSb, GaAsP, GaInP, AlInGaP or InGaAsP
At.
Laser cavity 30 is designed to provide enough optical gains to laser diode.As an example, according to the present embodiment
Laser cavity 30 can center be equipped with be suitable for emit about 850nm wavelength band light suitable thickness and ratio of components amount
Sub- well layer.However, the wavelength band of the laser of quantum well layer output is not particularly limited.
Oxide layer 51 can be arranged in laser cavity 30.Oxide layer 51 can be mixed with the second reflecting layer 40 identical type
Miscellaneous dose of doping.As an example, oxide layer 51 can be with about 1018cm-3Doped in concentrations profiled have a p-type dopant, but the present invention is not limited to
This.
Oxide layer 51 may include the semiconducting compound containing aluminium, such as AlAs, AlGaAs, InAlGaAs etc..In root
The first hole h1 can be disposed with according to the center of the oxide layer 51 of the present embodiment.That is, oxide layer 51 can have and be formed at center
The annular shape in hole.Since oxide layer 51 has high electrical resistance and compared with low-refraction, electric current can be made to pass through the first hole h1,
And it can be towards collection laser at the center of element.Second reflecting layer 40 can be arranged in the inside of the first hole h1 to form platform
Rank.Also, in the second hole region h2, the light generated in quantum well layer can be doubled by round trip, and laser can be with
It is launched into the upper layer of the second hole h2.
It is aoxidized in the structure of existing laser by exposing the side wall of oxide layer 1 referring to Fig. 3.Oxidation can
To be carried out in a manner of being increasingly towards center from side wall.The resistance of exterior portion 1a after oxidation increases, and it is unoxidized in
Center portion divides 1b to may be used as the oxide aperture for passing through electric current or light.
However, the degree of oxidation of oxide layer 1 may be influenced by various conditions, for example, the semiconductor transformation contained in oxide layer 1
Close the composition of object, the orientation of compound, the thickness of layer and oxidation process etc..The right and wrong that is, accurate control oxide is open
Often difficult.
But it may be used as using according to the present embodiment, the first hole h1 and the second reflecting layer 40 being arranged in the first hole h1
In the automatic arrester(-tor) for terminating oxidation.That is, even if changing oxidizing condition, if being formed in the oxide layer 51 of the first hole h1 all by oxygen
Change, then no longer has in the region of oxidation.Accordingly, there exist inaccurately control degree of oxidation also can have with the first hole h1's
The advantages of diameter corresponding oxide aperture.Therefore, manufacturing process can simplify, and yield can be improved.In addition, by primary
Oxidation operation can open chip with oxidation number ten, therefore can be improved speed of production.
Therefore, can change condition according to the oxide layer of the present embodiment 51 occurs that oxidation reaction well.As showing
Example, the thickness of oxide layer 51 is bigger, and aluminium component is higher, and doping concentration is higher, and oxidation reaction occurs better.
The thickness of oxide layer 51 can beIf the thickness of oxide layer 51 is less thanThen oxygenation efficiency is very
It is low, therefore lead to the problem of extending activity time, if the thickness of oxide layer 51 is greater thanThen since the thickness after oxidation is received
It contracts and there are problems that cracking in the end of oxide aperture.
The doping concentration of oxide layer 51 can be 1 × 1015cm-3~1 × 1020cm-3.If the doping concentration of oxide layer 51 is small
In 1 × 1015cm-3, then oxidation rate reduces, and leads to the problem of extending activity time, if the doping concentration of oxide layer 51 is greater than 1
×1020cm-3, then since internal flaw increases, cracked risk is very high.
The aluminium composition of oxide layer 51 can be 80%~100%.If the aluminium composition of oxide layer 51 is equal to or less than 80%,
Oxidation rate reduces, and leads to the problem of extending activity time.
Cap layers 52 can be arranged in oxide layer 51.Cap layers 52 can be used for protecting during process or after process
Oxide layer is in order to avoid be externally exposed environment.As described above, oxide layer 51 can be designed to have high alumina composition and it is highly doped dense
Degree is so as to easy to oxidize.Therefore, in the case where no cap layers 51, oxide layer 51 before carrying out oxidation operation may by
Oxidation.Since semiconductor layer is difficult to grow in the oxide layer 51 being oxidized, the growth in the second reflecting layer may be tired
Difficult.Therefore, cap layers 52 can prevent oxide layer to be pre-oxidated before oxidation operation.
According to may include the semiconducting compound containing aluminium in the oxide layer 51 of the present embodiment, for example, AlAs, AlGaAs,
InAlGaAs etc., enables 20 regrowth of the second reflecting layer.That is, may include arsenic according in the oxide layer of the present embodiment
(As), semiconductor layer is grown on it.
Cap layers 52 can be by being selected from GaAs, InAlGaAs, AlGaAsSb, AlGaAsP, GaInP, InGaAsP and AlInGaP
At least one of formed, however, the present invention is not limited thereto.
If cap layers 52 contain aluminium, the aluminium that the aluminium composition of cap layers 52 can be less than oxide layer 51 is formed.As an example, cap layers
52 aluminium composition can be 0%~60%.If the aluminium composition of cap layers 52 is greater than 60%, it possibly is present at cap layers 52 in process
The problem of surface is exposed in air and aoxidizes, and exist after forming the second reflecting layer 20, also when oxide layer 51 aoxidizes,
The problem of 52 simultaneous oxidation of cap layers.
The thickness of cap layers 52 can beIf the thickness of cap layers 52 is equal to or less thanThen due to cap
52 infiltration too thin that oxygen effectively prevents of layer, if the thickness of cap layers 52 is equal to or more thanIt is then anti-second
When penetrating 20 regrowth of layer, step difference is excessive, and therefore, it is difficult to form uniform interface.
Referring to Fig. 4, cap layers 52 may include the extension 52a extended to the inner wall of the first hole h1 of oxide layer 51.Herein
In the case of, extension can inhibit that boundary occurs between the second reflecting layer 41b of the inside for being arranged in the first hole h1 and oxide layer 51
Planar defect.The minimum thickness of extension 52a can beIf the thickness of extension 52a is equal to or less than
Can not then inhibit that boundary defect occurs between the second reflecting layer 40-2 and oxide layer 51.If thickness is equal to or more thanThen
In the second reflecting layer 40-2 growth, the uniformity of the reflectance coating grown near 51 side of oxide layer will appear problem.
Cap layers 52 are formed in oxide layer 51, then in PH3Atmosphere (InGaP or InGaAsP class material) or AsH3Atmosphere
Carrying out high-temperature heat treatment under (GaAs class material), then the material for being in edge is moved to relative to the inside of the first low hole h1, from
And extension 52a can be formed.
Referring to Fig. 5, the inner wall of the first hole h1 can have inclined surface 53.The inclination of inner wall can be not intended in etching process
Ground is formed.However, the inclination of the inner wall of the first hole h1 can be formed intentionally.There is the case where inclined surface 53 in the first hole h1
Under, the second reflecting layer 40 easy to form on it.
When the diameter of the first hole h1 is 10 μm, the tilt angle (θ 1) of the inner wall of the first hole h1 can for 35.5 °~
87°.If the tilt angle, less than 35.5 °, the diameter of the second hole h2 is equal to or less than 1 μm, so that light output may be fast
Speed decline.If the tilt angle is greater than 87 °, each layer in the second reflecting layer 40 may not be formed uniformly on the first hole h1
Inner wall on.
When the diameter of the first hole h1 is 15 μm, the tilt angle (θ 1) of the inner wall of the first hole h1 can for 35.5 °~
87°.If the tilt angle, less than 24.5 °, the diameter of the second hole h2 is equal to or less than 1 μm, so that light output may be fast
Speed decline.If the tilt angle is greater than 87 °, each layer in the second reflecting layer 40 may not be formed uniformly on the first hole h1
Inner wall on.
Referring to Fig. 6, photic zone 54 can be further arranged in the first hole h1 of oxide layer 51.Photic zone 54 can be by having
It is conductive with promote electric current inject and be so that center have mobile layer laser cavity 30 emit fairing benefit transmission and have
There is the material of high-transmission rate to be made.As an example, photic zone 54 can by selected from InAlGaAs, InAlGaP, InGaAsP and
The Semiconductor Chemistry object such as ZnSeS is formed, however, the present invention is not limited thereto.
Fig. 2 is referred again to, the second reflecting layer 40 can be arranged in the top of oxide layer 51 and the first hole h1.With the first reflecting layer
20 in the same manner, and the second reflecting layer 40 may include 2-1 layers of 41b and 2-2 layers of 42b.2-1 layers of 41b and 2-2 layers of 42b are
It can have the composition of AlGaAs, but the aluminium composition of 2-1 layers of 41b can be higher.
Second reflecting layer 40 can be doped to have the polarity different from the first reflecting layer 20.As an example, if first
Reflecting layer 20 and substrate 10 are doped with n-type dopant, then the second reflecting layer 40 can be doped with p-type dopant.
Second reflecting layer 40 can have than the less layer in the first reflecting layer 20, to reduce from vertical cavity surface-emitting laser
The reflectivity of device reflection.That is, the reflectivity in the second reflecting layer 40 can be less than the reflectivity in the first reflecting layer 20.
Second reflecting layer 40 may include the stage portion 43 being arranged on the first hole h1.Stage portion 43 can be defined due to
First hole h1 and region more lower than fringe region.The thickness of stage portion 43 can correspond to the depth of the first hole h1, but this hair
It is bright without being limited thereto.
Remoter from oxide layer 51, the stage portion 43 in the second reflecting layer 40 can more become smaller.With the layer in the second reflecting layer 40
Number increases, and the diameter of stage portion 43 can accordingly reduce with the thickness of each layer.Therefore, the outermost layer in the second reflecting layer 40 can
To be disposed with the smallest first groove 44 of step.The diameter of first groove 44 can be less than the diameter of the first hole h1.First groove
44 depth can be equal to or less than the depth of the first hole h1.
The reflectivity in the second reflecting layer can be designed based on the thickness until the upper surface of the first groove.Wherein, it is disposed with
The region of first groove 44 can be defined as the region (with alpha region S1) of light distribution and multiplication, and the outside area of the first slot 44
Domain can be defined as the region (reverse phase region S2) that light is not distributed.
According to the present embodiment, the diameter of the first hole h1 can be greater than the diameter of the first groove 44.Most of laser is distributed in
The region S1, therefore the end of the first hole h1 does not interfere with light distribution and light multiplication regions.Therefore, can make in the first hole end h1
Light scattering and light absorption minimize.It is thus possible to improve light efficiency, and compared with existing structure, the service life of element can be improved.
If the diameter of the first hole h1 is arranged in the inside or identical as its diameter region S1 of light distribution, it is likely to occur
Light is the problem of the end of the first hole h1 is by scattering or absorption.
With the diameter of the first hole h1 for 100%, the diameter of the first groove 44 and the second hole h2 can be the straight of the first hole h1
The 6%~98% of diameter.The diameter of general oxide aperture is about 5~15 μm.Wherein, if the diameter is less than 6%, first
The diameter of groove 44 is equal to or less than 1 μm, so that light output may decline rapidly.If the diameter is greater than 98%, second
Each layer in reflecting layer 40 may form unevenly, thus the problem of will appear each layer local interruption.
A part of lower part that can be arranged in oxide layer 51 in the second reflecting layer.That is, oxide layer 51 and cap layers 52 can be with cloth
It sets between the second reflecting layer 40.Above structure has the advantages that can protect laser cavity 30.
Wherein, the second reflecting layer 40-1 for being arranged in the lower part of oxide layer 51 and a secondary growth does not have stage portion 43, with this
On the contrary, second reflecting layer 40-2 of the regrowth in oxide layer 51 can have stage portion 43.
First electrode 71 can be arranged on the second reflecting layer 40, and second electrode 11 can be arranged in the lower part of substrate 10.
However, the invention is not limited thereto, and the top of the substrate 10 of second electrode 11 can be made to expose, then arrange first electrode 71
In the region exposed.
First electrode 71 and second electrode 11 may include indium tin oxide (ITO), indium-zinc oxide (IZO), indium zinc-tin
Oxide (IZTO), indium aluminium zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin-oxide (IGTO), aluminium zinc oxygen
Compound (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO nitride (IZON), AGZO (Al-Ga ZnO),
IGZO(In-Ga ZnO)、ZnO、IrOx、RuOx、NiO、RuOx/ITO、Ni/IrOx/ Au or Ni/IrOx/Au/ITO、Ag、Ni、Cr、
At least one of Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au and Hf and formed, but the present invention is not limited to above-mentioned
Material.
As an example, first electrode 71 may include multiple metal layers (for example, Ti/Pt/Au).Wherein, the thickness of Ti can
Think aboutThe thickness of Au can beHowever, the present invention is not limited thereto.
Second electrode 11 may include multiple metal layers (for example, AuGe/Ni/Au), wherein the thickness of AuGe can beThe thickness of Ni can beThe thickness of Au can beHowever, the present invention is not limited thereto.
Ohm layer 61 can be further arranged between first electrode 71 and the second reflecting layer 40.For low ohmic resistance,
Ohm layer 61 may include with the band gap equal to or less than GaAs substrate and being equal to or less than emit the band gap of the energy of laser
Material.As an example, ohm layer 61 can by selected from AlInGaAs, InGaAs, GaAs, AlInGaAsSb,
AlInGaAsPSb, InGaAsP, InGaAsPSb, GaAsSb, InGaAsSb, InAsSb, AlGaAsSb, AlGaAsP and
Any one of AlGaInAsP formation.According to the present embodiment, be formed in ohm layer 61 the second hole h2 can have with it is first recessed
The corresponding diameter of slot 44.That is, ohm layer 61 is arranged in the region that light is not distributed, therefore it is defeated not interfere with light
Out.
Fig. 7 is the chart for showing the catadioptric rate of the calculating of laser diode of embodiment according to the present invention, and Fig. 8 is to show
The catadioptric rate of the calculating of the laser diode of embodiment according to the present invention and the chart of electric field strength, Fig. 9 are to according to this hair
The chart of the phase shift angle of the laser diode of bright embodiment.
Fig. 7 show the second reflecting layer 40 at 850nm reflectivity be about 99.5% and first reflecting layer 20 reflectivity
It is the reflectance spectrum of about 99.9% structure.Therefore, the 850nm amplified between the first reflecting layer 20 and the second reflecting layer 40
Laser can be emitted by the second reflecting layer 40.
Referring to Fig. 8, the interface of cap layers 52, the side of oxide layer 51 and the regrowth on a part of 42a in the second reflecting layer
(boundary face being represented by dotted lines) is arranged in the valley of standing wave, so as to so that the laser diode as caused by regrowth interface
Internal minimum optical losses.Wherein it is preferred to reduce the Al of the top layer 42a in the 40-1 of the second reflecting layer of lower part as far as possible
Ratio of components, to have the band gap almost the same with the transmitting energy of laser, to make the surface as caused by Al in regrowth
Problem of oxidation minimizes.That is, in the case where the optical maser wavelength of 850nm, a part of the second reflecting layer of lower part 40-1
The Al component of top layer 42a can be about 5% or so.Also, in the case where the optical maser wavelength of 850nm, regrowth it is upper
The Al component of the first layer 42b of the second reflecting layer of portion 40-2 can be 5%~25%.
Referring to Fig. 9, it has been confirmed that be arranged in light distribution region (same phase on the basis of the center of laser cavity 30 at 850nm
Region) in.
Figure 10 a to Figure 10 k is the attached drawing for showing the manufacturing method of laser diode of an embodiment according to the present invention.
0a referring to Fig.1 can sequentially form substrate 10, the first reflecting layer 20, laser cavity 30, the second reflecting layer 40, oxidation
Layer 51 and cap layers 52.The feature of each layer can be applicable in composition as described above.
0b referring to Fig.1 is arranged after the first mask in cap layers 52, is etched, so as in cap layers 52 and oxidation
Layer 51 is centrally formed the first hole h1.First mask 81 can be by SiO2、SixOy、Si3N4、SixNy、SiOxNy、Al2O3、TiO2、
AlN or photoresist are formed, however, the present invention is not limited thereto.
0c and Figure 10 d referring to Fig.1 can make the 40-2 regrowth of the second reflecting layer of top in oxide layer 51 and the first hole h1
On.Therefore, oxide layer 51 can be arranged between lower part the second reflecting layer 40-1 and the second reflecting layer of top 40-2.
The second reflecting layer of the top 40-2 being arranged in oxide layer 51 may include the stage portion being arranged on the first hole h1
43.Stage portion 43 can be arranged in region more lower than fringe region due to the first hole h1.The thickness of stage portion 43 can be right
It should be in the depth of the first hole h1, however, the present invention is not limited thereto.
Remoter from oxide layer 51, the stage portion 43 in the second reflecting layer 40 can more become smaller.With the layer in the second reflecting layer 40
Number increases, and the diameter of stage portion 43 can accordingly reduce with the thickness of each layer.Therefore, the outermost layer in the second reflecting layer 40 can
To be disposed with the first groove 44.The diameter of first groove 44 can be less than the diameter of the first hole h1.The depth of first groove 44 can
To be equal to or less than the depth of the first hole h1.
Later, it is formed after ohm layer 61 on entire second reflecting layer 40, it can be right with the first groove 44 by removing
The region answered forms the second hole h2.According to the present embodiment, most of laser can be emitted by the second hole h2 to be not incident on
On ohm layer 61.Therefore, ohm layer 61 can be used with the band gap equal to or less than GaAs substrate and be equal to or less than transmitting
The material of the band gap of the energy of laser is made.
0e to Figure 10 h referring to Fig.1, on ohm layer 61 formed first electrode 71, re-form on it the second mask 82 it
Afterwards, the fringe region of the second mask 82 of removal can be etched.
0i referring to Fig.1 can aoxidize the side of oxide layer 51.According to the present embodiment, since electric current has passed through first
Hole h1 is formed the hole that light can be made to be emitted by injection, it is therefore not necessary to correctly adjust the degree of oxidation of oxide layer 51.I.e..When entire
When oxide layer 51 all aoxidizes, oxidation operation can terminate automatically.
As an example, oxidation operation can be by being equipped with N within the temperature range of about 300 DEG C to 450 DEG C2And H2The mixing of O
Expose sample about 30~50 minutes in the reaction tube of gas atmosphere to carry out, however, the present invention is not limited thereto.Also, according to this implementation
The oxide layer 51 of example can control thickness, doping concentration and aluminium composition, so as to quickly be aoxidized.
0j referring to Fig.1, protective layer 90 can be arranged in fringe region after the etching.Protective layer 90 can be by that can protect
A variety of materials on the outside of laser diode are made.As an example, protective layer 90 can be by being selected from SiO2、Si3N4、SiON、Ta2O5、
HfO2, at least one of benzocyclobutene (BCB) and polyimides be made, however, the present invention is not limited thereto.Also, according to need
It wants, the cured process of protective layer 90 can be made with further progress.
0k referring to Fig.1 can form the pad electrode 72 connecting with first electrode 71.And it is possible under substrate 10
Portion forms second electrode 11.
Figure 11 a to Figure 11 c is the attached drawing for showing the manufacturing method of laser diode of another embodiment of the present invention.
1a and Figure 11 b referring to Fig.1 sequentially forms substrate 10, the first reflecting layer 20, has the laser cavity of mobile layer at center
30, the second reflecting layer 40, oxide layer 51 and cap layers 52 arrange after the first mask 81 in cap layers 52, are etched, so as to
To be centrally formed the first hole h1 in cap layers 52 and oxide layer 51.
Later, cap layers 52 can be formed in oxide layer 51, and are heat-treated and are formed with the inner wall in the first hole h1
The extension 52a of cap layers 52.Specifically, when the formation cap layers 52 in oxide layer 51 and in PH3Atmosphere (InGaP or
InGaAsP class material) or AsH3High-temperature heat treatment is carried out under atmosphere (GaAs class material), then is in the cap material at edge to opposite
The inside of the first low hole h1 is mobile, so as to form extension 52a.Wherein, heat treatment temperature can be 500 DEG C~900
℃.According to above structure, extension 52a may be used as the arrester(-tor) for preventing from being aoxidized.
1c referring to Fig.1 can form the second reflecting layer 40 in oxide layer 51 and the first hole h1.Subsequent process can be with
Figure 10 e to Figure 10 k is carried out in the same manner.
It may be used as the light source of 3D recognition of face and 3D imaging technique according to the laser diode of the present embodiment.3D recognition of face
It needs with 3D imaging technique with the patterned light source matrix of two-dimensional array form.Can analyze will be patterned with two-dimensional array form
Light source matrix be irradiated on object the pattern of the light reflected.Wherein, in the light source matrix with two-dimensional array pattern, lead to
The deformation state for crossing the element light that analysis is reflected from the curved surface of each shaped objects can form the 3-D image of object.
It, can when using with the patterned light source of two-dimensional array form to manufacture the vertical cavity surface-emitting laser array according to the present embodiment
To provide the characteristic of each element light source uniformly with the patterned light source matrix of two-dimensional array form.
Also, laser diode according to the present invention can be in such as optical communication device, CCTV, vehicle night vision, action recognition, doctor
Treatment/treatment, for IoT communication device, heat tracking camera, thermal imaging camera, solid-state laser (SOL) pump field, be used for
The various application fields such as the heating process of bonding plastics film are used as the vertical cavity surface-emitting laser light source of low price.
Although describing embodiment by reference to multiple illustrative embodimentss of the invention, it is to be understood that at this
In the spirit and concept of invention, those skilled in the art can design various other modifications and embodiment.More specifically,
In the range of the present invention, attached drawing and the attached claims, the component part and/or arrangement that can be arranged to main combination are carried out
Various changes and modifications.Other than being changed and modified to component part and/or arrangement, use is substituted also for this field
Technical staff be also obvious.
Claims (13)
1. a kind of vertical cavity surface emitting laser, which is characterized in that including：
Substrate；
First reflecting layer, arrangement is on the substrate；
Mobile layer is arranged on first reflecting layer；
Oxide layer is arranged in the mobile layer, and includes the first hole at its center；
Second reflecting layer is arranged in the oxide layer and first hole；
Cap layers are arranged between the oxide layer and second reflecting layer；And
First electrode is arranged on second reflecting layer,
Wherein, second reflecting layer includes stage portion, and the stage portion is arranged on first hole.
2. vertical cavity surface emitting laser according to claim 1, which is characterized in that
Second reflecting layer includes multiple first sublayers and multiple second sublayers,
Multiple first sublayers and multiple second sublayers are alternately arranged,
The refractive index of first sublayer is higher than the refractive index of second sublayer.
3. vertical cavity surface emitting laser according to claim 1, which is characterized in that
Closer to the first electrode, the width of the stage portion is narrower in second reflecting layer.
4. vertical cavity surface emitting laser according to claim 3, which is characterized in that
Second reflecting layer includes being formed in outermost first groove,
The diameter of first groove is less than the diameter in first hole.
5. vertical cavity surface emitting laser according to claim 1, which is characterized in that
The cap layers include extension, and the extension extends to the inner sidewall in first hole.
6. vertical cavity surface emitting laser according to claim 5, which is characterized in that
The thickness of the extension is less than the thickness of the cap layers.
7. vertical cavity surface emitting laser according to claim 1, which is characterized in that it further include second electrode, described
Two electrode arrangements are in the lower part of the substrate.
8. vertical cavity surface emitting laser according to claim 1, which is characterized in that it further include ohm layer, described ohm
Layer arrangement between first electrode and the second reflecting layer,
The band gap of the ohm layer is equal to or less than the band gap of the substrate,
The band gap of the ohm layer is equal to or less than the energy of the light emitted from the mobile layer.
9. vertical cavity surface emitting laser according to claim 8, which is characterized in that
The ohm layer includes the second hole being disposed centrally therein,
The diameter in first hole is greater than the diameter in second hole.
10. vertical cavity surface emitting laser according to claim 9, which is characterized in that
The diameter in second hole is the 6%~98% of the diameter in first hole.
11. vertical cavity surface emitting laser according to claim 10, which is characterized in that
The ohm layer include AlInGaAs, InGaAs, GaAs, AlInGaAsSb, AlInGaAsPSb, InGaAsP,
Any one of InGaAsPSb, GaAsSb, InGaAsSb, InAsSb, AlGaAsSb, AlGaAsP and AlGaInAsP.
12. a kind of manufacturing method of vertical cavity surface emitting laser, which is characterized in that include the following steps：
The first reflecting layer, mobile layer and oxide layer are sequentially formed on substrate；
The first hole is centrally formed in the oxide layer；
Cap layers are formed in the oxide layer；
The second reflecting layer is formed in the cap layers and first hole；And
The oxide layer is aoxidized from the side of the oxide layer,
Wherein, in the step of forming second reflecting layer,
Second reflecting layer is formed by repeating multiple layers are laminated, and the is formed in the top layer in second reflecting layer
One groove, the diameter of first groove are less than the diameter in first hole.
13. the manufacturing method of vertical cavity surface emitting laser according to claim 12, which is characterized in that in the oxidation
It further include after forming ohm layer on entire second reflecting layer, removing and corresponding to first groove after step
Region is come the step of forming the second hole.
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Cited By (3)
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|---|---|---|---|---|
| CN109842018A (en) * | 2019-01-17 | 2019-06-04 | 上海砷芯科技有限公司 | Laser diode |
| CN110048306A (en) * | 2019-05-21 | 2019-07-23 | 厦门乾照半导体科技有限公司 | A kind of laser structure and production method of vertical plane radial |
| CN112542766A (en) * | 2019-09-23 | 2021-03-23 | 台湾积体电路制造股份有限公司 | Vertical cavity surface emitting laser device and method for manufacturing micro lens |
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| WO2008152642A1 (en) | 2007-06-13 | 2008-12-18 | Ramot At Tel Aviv University Ltd. | Linearised optical digital modulator |
| KR102171733B1 (en) * | 2018-04-02 | 2020-10-29 | 주식회사 레이아이알 | Vertical Cavity Surface Emitting Lasers |
| WO2019194406A1 (en) * | 2018-04-02 | 2019-10-10 | 주식회사 레이아이알 | Vertical-cavity surface-emitting laser |
| KR20220126450A (en) * | 2021-03-09 | 2022-09-16 | 주식회사 레이아이알 | Laser device |
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| CN108879324B (en) | 2020-12-29 |
| KR101818725B1 (en) | 2018-01-15 |
| CN112510485A (en) | 2021-03-16 |
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