CN108878647A - Device preparation method a kind of while that there is negative differential resistance and memristor function - Google Patents
Device preparation method a kind of while that there is negative differential resistance and memristor function Download PDFInfo
- Publication number
- CN108878647A CN108878647A CN201810697102.1A CN201810697102A CN108878647A CN 108878647 A CN108878647 A CN 108878647A CN 201810697102 A CN201810697102 A CN 201810697102A CN 108878647 A CN108878647 A CN 108878647A
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- China
- Prior art keywords
- piece
- mask plate
- negative differential
- memristor
- formamide
- Prior art date
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Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002073 nanorod Substances 0.000 claims abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- 238000007711 solidification Methods 0.000 claims abstract description 4
- 230000008023 solidification Effects 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 9
- 230000036314 physical performance Effects 0.000 abstract description 3
- 239000011701 zinc Substances 0.000 description 14
- 239000002070 nanowire Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 230000009699 differential effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Semiconductor Lasers (AREA)
Abstract
Device preparation method a kind of while that there is negative differential resistance and memristor function, steps are as follows, after Zn piece washes of absolute alcohol, it is placed in formamide solution and reacts, Ag top electrode is prepared with mask plate, mask plate is placed in completely reacted Zn on piece by mask plate hole diameter 0.5-1mm, silver gel is added dropwise, solidification is for 24 hours；Removing oxide layer is removed into the Zn piece surface polishing of 1% area, exposes unreacted Zn and does hearth electrode, Ag does top electrode, and middle layer is ZnO nano-rod array to get target devices.Step of the present invention is few, easy to operate, obtained physical performance is excellent, has apparent negative differential and memristor characteristic, is expected to be applied in Novel electronic devices.
Description
Technical field
It is especially a kind of that there is negative differential resistance and the device of memristor function simultaneously the present invention relates to high-frequency electron device
Preparation method.
Background technique
Negative differential resistance (NDR) effect generally refers to generate in N-shaped energy valley semiconductor due to electron tunneling effect
A kind of effect, i.e., with voltage increases and the phenomenon that reducing is presented in electric current, under different voltage effects, the transmittability of electronics by
To the limitation of trap level, convert film mutually between high resistance and low resistance state.Memristor is a kind of passive device, i.e. work
Work is must to provide external voltage can just drive its work, and NDR device is a kind of a kind of device that can externally export energy,
The combination of both they is likely to that the application range of memristor itself can be broken through, and becomes a kind of completely new device.Due to NDR effect
In the application potential of application value and memristor in the following novel memory devices in nano electron device system, therefore for
The phenomenon that NDR and memristor coexist has huge application prospect in the development of the following Novel electronic devices, development and application.?
Negative impedance region, the Micro-fluctuations of carrier concentration part can cause a large amount of accumulation of non-equilibrium majority carrier and produce in semiconductor
Raw space charge, this phenomenon is exactly negative differential resistance effect.It is the physical basis of Gunn diode work, is to make at this stage
The important technology approach of standby high-frequency electron device.Under normal circumstances, in nano material, due to quantum confined effect, Neng Goushi
Existing negative differential effect and memristor effect are simultaneously deposited.
Summary of the invention
The present invention be just to provide a kind of step it is few, it is easy to operate, be made physical performance it is excellent while have negative differential resistance
And the preparation method of memristor function element.
The object of the present invention is achieved like this：Device preparation side a kind of while that there is negative differential resistance and memristor function
Method includes the following steps：
A, Zn piece cleans
By area 1-100cm2Zn piece is put into 100ml washes of absolute alcohol 10 minutes, removes surface oxide layer, dries in the air naturally
It is dry；
B, the aqueous solution of formamide is configured
Configure the aqueous solution 200ml of the formamide of 5% volume ratio；
C, it reacts
Zn piece is placed in the aqueous solution of formamide, taking-up for 24 hours, naturally dry are reacted at 80 DEG C；
D, device is prepared
Ag top electrode is prepared with mask plate, mask plate is placed in completely reacted Zn piece by mask plate hole diameter 0.5-1mm
On, silver gel is added dropwise, solidification is for 24 hours；Removing oxide layer is removed into the Zn piece surface polishing of 1% area, exposes unreacted Zn and does bottom electricity
Pole, Ag do top electrode, and middle layer is ZnO nano-rod array to get target devices.
Compared with prior art, the beneficial effects of the invention are as follows：
The present invention uses liquid-phase precipitation method, using inorganic salts as zinc source, does not have to template, is reacted at relatively low temperatures up to object machine
Part, preparation method is simple, and reaction is mild, less energy-consuming, to equipment without particular/special requirement, is suitble to large-scale production.
This method is simple and easy to do, is not required to large scale equipment, is conducive to be mass produced.Synthesis step is few, easy to operate, is made
Physical performance is excellent.Obtained device has apparent negative differential and memristor feature, is expected to be applied in Novel electronic devices.
Detailed description of the invention
Fig. 1 is ZnO nanowire array cross-section diagram prepared by experiment flow figure and embodiment one of the invention.
Fig. 2 a-d is surface topography, the XRD of device material object photo prepared by the embodiment of the present invention one and ZnO nanowire array
Characterization.
Fig. 2 a is photo in kind.
Fig. 2 b is scanned photograph at the top of ZnO nanowire array.
Fig. 2 c is the XRD spectra of ZnO nanowire array.
Fig. 2 d is the energy loss spectrogram of ZnO nanowire array.
Fig. 3 is device performance figure prepared by the embodiment of the present invention one.
Specific embodiment
With reference to the accompanying drawing and specific embodiment, the present invention is described in further detail.
Embodiment one
A, Zn piece cleans
By Zn piece (area 4cm2) it is put into dehydrated alcohol (100ml) cleaning 10 minutes, surface oxide layer is removed, is dried in the air naturally
It is dry；
B, the aqueous solution of formamide is configured
Configure the aqueous solution 200ml of the formamide of 5% volume ratio；
C, it reacts
Zn piece is placed in the aqueous solution of formamide, taking-up for 24 hours, naturally dry are reacted at 80 DEG C；
D, device is prepared
Ag top electrode is prepared with mask plate, mask plate is placed in completely reacted Zn piece by mask plate hole diameter 0.5-1mm
On, silver gel is added dropwise, solidification is for 24 hours.Removing oxide layer is removed into the Zn piece surface polishing of 1% area, exposes unreacted Zn and does bottom electricity
Pole, Ag do top electrode to get target devices.
Fig. 1 is ZnO nanowire array cross-section diagram prepared by experiment flow figure and embodiment one of the invention, and section is shown
ZnO nanowire array is with a thickness of 2 microns
Fig. 2 a-d is surface topography, the XRD of device material object photo prepared by the embodiment of the present invention one and ZnO nanowire array
Characterization.Fig. 2 a is photo in kind, area 4cm2.Fig. 2 b is scanned photograph at the top of ZnO nanowire array, shows nanorod diameter
For 300nm.Fig. 2 c is the XRD spectra of ZnO nanowire array, and Fig. 2 d is the energy loss spectrogram of ZnO nanowire array, and the two can
To prove in Zn piece Surface Creation ZnO nanowire array.
Fig. 3 is device performance figure prepared by the embodiment of the present invention one, as seen from the figure apparent memristor and negative differential resistance effect
It answers.Fig. 3 display device has memristor characteristic between -1V to 1V.There is negative differential resistance between -4V cause -1V and 1V-4V
Effect, i.e. electric current reduce with the increase of voltage.
Claims (1)
1. a kind of device preparation method simultaneously with negative differential resistance and memristor function, includes the following steps：
A, Zn piece cleans
By area 1-100cm2Zn piece is put into 100ml washes of absolute alcohol 10 minutes, removes surface oxide layer, naturally dry；
B, the aqueous solution of formamide is configured
Configure the aqueous solution 200ml of the formamide of 5% volume ratio；
C, it reacts
Zn piece is placed in the aqueous solution of formamide, taking-up for 24 hours, naturally dry are reacted at 80 DEG C；
D, device is prepared
Ag top electrode is prepared with mask plate, mask plate is placed in completely reacted Zn on piece by mask plate hole diameter 0.5-1mm, is dripped
Add silver gel, solidification is for 24 hours；Removing oxide layer is removed into the Zn piece surface polishing of 1% area, exposes unreacted Zn and is hearth electrode, Ag
Top electrode is done, middle layer is ZnO nano-rod array to get target devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810697102.1A CN108878647B (en) | 2018-06-29 | 2018-06-29 | Preparation method of device with negative differential resistance and memristor functions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810697102.1A CN108878647B (en) | 2018-06-29 | 2018-06-29 | Preparation method of device with negative differential resistance and memristor functions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878647A true CN108878647A (en) | 2018-11-23 |
| CN108878647B CN108878647B (en) | 2020-04-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810697102.1A Expired - Fee Related CN108878647B (en) | 2018-06-29 | 2018-06-29 | Preparation method of device with negative differential resistance and memristor functions |
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| Country | Link |
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| CN (1) | CN108878647B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113465635A (en) * | 2021-06-10 | 2021-10-01 | 电子科技大学 | Device for converting signals of sensor and neural network computing unit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110266515A1 (en) * | 2010-04-28 | 2011-11-03 | Pickett Matthew D | Memristive switch device |
| CN103367639A (en) * | 2013-07-25 | 2013-10-23 | 福州大学 | Zinc oxide nanowire low-power consumption resistive random access memory and preparation method thereof |
| CN104795493A (en) * | 2015-04-21 | 2015-07-22 | 东北师范大学 | Nanowire array based memristor and manufacturing method thereof |
-
2018
- 2018-06-29 CN CN201810697102.1A patent/CN108878647B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110266515A1 (en) * | 2010-04-28 | 2011-11-03 | Pickett Matthew D | Memristive switch device |
| CN103367639A (en) * | 2013-07-25 | 2013-10-23 | 福州大学 | Zinc oxide nanowire low-power consumption resistive random access memory and preparation method thereof |
| CN104795493A (en) * | 2015-04-21 | 2015-07-22 | 东北师范大学 | Nanowire array based memristor and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| YUXIN WANG ET AL.: ""Highly Oriented 1-D ZnO Nanorod Arrays on Zinc Foil: Direct Growth from Substrate, Optical Properties and Photocatalytic Activities"", 《THE JOURNAL OF PHYSICAL CHEMISTRY C》 * |
| 王雪亮 等: ""单层密集ZnO纳米棒阻变器件的导电机制"", 《发光学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113465635A (en) * | 2021-06-10 | 2021-10-01 | 电子科技大学 | Device for converting signals of sensor and neural network computing unit |
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| CN108878647B (en) | 2020-04-28 |
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