CN103531482B - The manufacture method of graphene field effect pipe - Google Patents
The manufacture method of graphene field effect pipe Download PDFInfo
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- CN103531482B CN103531482B CN201310533063.9A CN201310533063A CN103531482B CN 103531482 B CN103531482 B CN 103531482B CN 201310533063 A CN201310533063 A CN 201310533063A CN 103531482 B CN103531482 B CN 103531482B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
Abstract
The invention provides a kind of manufacture method of graphene field effect pipe, comprising: provide surface to be formed with the Semiconductor substrate of silicon dioxide layer; Form floating potential AC dielectric swimming structure: the first electrode section of at least one first sub-electrode, at least comprise the second electrode section of one second sub-electrode and sub-electrode connecting line and the third electrode portion of at least one 3rd sub-electrode, described sub-electrode connecting line runs through and connects all described second sub-electrodes, and the second sub-electrode is relative one by one respectively with the top of the 3rd sub-electrode; Form carbon nano tube suspension; A carbon nano-tube is connected between the second sub-electrode utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode; Fixing described carbon nano-tube; Sputtering technology is utilized to form metal level; Remove described metal, form graphene nanobelt.The present invention realizes the accurate aligning of single-root carbon nano-tube in batch, and Single Walled Carbon Nanotube is cut into graphene nanobelt, makes it to present typical characteristic of semiconductor.
Description
Technical field
The present invention relates to a kind of semiconductor technology, particularly relate to a kind of manufacture method of graphene field effect pipe.
Background technology
Graphene is by a kind of carbonaceous new material of monolayer carbon atom tightly packed one-tenth bi-dimensional cellular shape lattice structure, is the elementary cell building other dimension carbonaceous materials (as fullerene, carbon nano-tube, graphite).There is the high and energy gap controllable of carrier mobility and thermal conductivity higher semiconductor electrology characteristic, simultaneously its film morphology is with current silicon planner technology compatibility and can large-scale integrated, may become one of new generation of semiconductor material surmounting and replace silicon base CMOS.But its application in person in electronics of the structural limitations of Graphene zero band gap.Theoretical and experimental study shows that the quantum confined effect that graphene nanobelt has and edge effect can cause the width of the band gap of graphene nanobelt to rely on effect.In electronic application, the graphene nanobelt being less than 5nm at room temperature demonstrates to be had enough large band gap and is applied in the FET device of high on-off ratio.Up to now, there is a lot of method to prepare graphene nanobelt, as cutting carbon nano-tube method etc.
Carbon nano-tube can be regarded that graphene sheet layer is curling as and form, can be divided into according to the number of plies of graphene film: Single Walled Carbon Nanotube (or claim single-layer carbon nano-tube, Single-walledCarbonnanotubes, and multi-walled carbon nano-tubes (or multilayer carbon nanotube SWCNTs), Multi-walledCarbonnanotubes, MWCNTs).Carbon nano-tube has the optics of unique numerous excellence such as topological structure, high mechanical strength, good electric conductivity and uniqueness, characteristic electron and mechanical performance, thus in nanoelectronic, having very important purposes, is a kind of important materials with development prospect of field-effect transistor and single-electron device.
The distinct electrical characteristic that Single Walled Carbon Nanotube has and dimensional properties, make it become the preferred material of development of new electronic unit device.Therefore, the technical research based on the nano-device of SWCNTs has become one of international scientific frontline technology focus.And at present; manufacturing technology based on the nano-device of SWCNTs is still in laboratory stage substantially; existing typical mounting technology also cannot realize can scale, low-cost production, this state of the art remains restriction nanometer electronic device investigation and application institute facing challenges sex chromosome mosaicism.
Summary of the invention
The shortcoming of prior art in view of the above; the object of the present invention is to provide a kind of manufacture method of graphene field effect pipe, for solve in prior art based on the manufacturing technology of the nano-device of SWCNTs cannot realize can scale, low-cost production problem.
For achieving the above object and other relevant objects, the invention provides a kind of manufacture method of graphene field effect pipe, the manufacture method of described graphene field effect pipe at least comprises:
There is provided Semiconductor substrate, described semiconductor substrate surface is formed with silicon dioxide layer;
Form floating potential AC dielectric swimming structure on the semiconductor substrate, described floating potential AC dielectric swimming structure comprises:
First electrode section, the second electrode section and third electrode portion, wherein the first electrode section at least comprises one first sub-electrode, second electrode section at least comprises one second sub-electrode and sub-electrode connecting line, described sub-electrode connecting line runs through and connects all described second sub-electrodes, third electrode portion at least comprises one the 3rd sub-electrode, described first sub-electrode and the second sub-electrode, the second sub-electrode is relative one by one respectively with the top of the 3rd sub-electrode;
Carbon nano tube suspension is formed on the surface of described Semiconductor substrate and floating potential AC dielectric swimming structure;
A carbon nano-tube is connected between the second sub-electrode utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode;
Sputtering technology is utilized to form metal level in described Semiconductor substrate and carbon nano-tube;
Corrode described metal, destroy the surface structure of the carbon nano-tube be connected with described metal, so that the Semiconductor substrate between described second sub-electrode and the 3rd sub-electrode to form graphene nanobelt simultaneously.
Preferably, in described sputtering technology, comprise and adopt Ar+ ion beam to carry out bombardment target plate, and suitable sputtering parameter is set ensures that the energy of described Ar+ ion beam is greater than 50eV.
Preferably, in described sputtering technology, the metal of sputtering is Au, Al, Ti, Ni, Y, Nb, Rh, Pd, Ag or Zn.
Preferably, the described sputtering technology that utilizes is formed in the step of metal level in described Semiconductor substrate and carbon nano-tube, and the metal of described sputtering is Zn, and being evacuated to vacuum degree is 3 × 10
-6the flow of Torr, Ar is 100sccm, and air pressure is 10mTorr, and radio-frequency power is 50W, and the time of sputtering is 2min.
Preferably, before described sputtering, also comprise the pre-sputtering of carrying out 10min.
Preferably, in described AC dielectric swimming technique, between described second electrode section and Semiconductor substrate, alternating current is applied.
Preferably, the amplitude of described alternating voltage is 5V ~ 15V, and frequency is 1MHZ ~ 5MHZ; The time applying alternating voltage is 1min ~ 5min.
Preferably, the diameter of described carbon nano-tube is 0.6nm ~ 2nm.
Preferably, the preparation technology of the suspension of described carbon nano-tube comprises:
Single Walled Carbon Nanotube raw material are distributed in the basic sodium sulfonate of dodecane, form the mixture of carbon nano-tube and the basic sodium sulfonate of dodecane;
Centrifuge is adopted to be undertaken centrifugal by the mixture of described carbon nano-tube and the basic sodium sulfonate of dodecane.
Preferably, the described technique be distributed to by Single Walled Carbon Nanotube raw material in the basic sodium sulfonate medium of dodecane adopts high speed agitator to carry out.
Preferably, after the Semiconductor substrate between described second sub-electrode and the 3rd sub-electrode forms the step of graphene nanobelt, also step is comprised: utilize acetone to remove PMMA; Isopropyl alcohol is utilized to carry out cleaning; Nitrogen is utilized to carry out drying; Carry out annealing process.
Preferably, described annealing process carries out in Ar atmosphere, and wherein arranging annealing temperature is 300 DEG C, and annealing time is 1 hour.
Preferably, the width of described graphene nanobelt is less than 5nm.
Preferably, connect the step of a carbon nano-tube between the second sub-electrode utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode after, utilize before sputtering technology forms the step of metal level in described Semiconductor substrate and carbon nano-tube, also comprise:
Spin coating PMMA in described Semiconductor substrate, floating potential AC dielectric swimming structure and carbon nano-tube;
Adopt EBL technology that described PMMA is graphical, expose the described carbon nano-tube between the second sub-electrode and the 3rd sub-electrode.
Preferably, described first sub-electrode is the triangle that drift angle is relative with the opposed tips of described second sub-electrode, and described second sub-electrode is the triangle that drift angle is relative with the opposed tips of described 3rd sub-electrode.
Preferably, described floating potential AC dielectric swimming structure is zhou duicheng tuxing, and described sub-electrode connecting line is symmetry axis.
Preferably, the described metal of described removal and the surface structure of carbon nano-tube be connected with metal, the step Semiconductor substrate between described second sub-electrode and the 3rd sub-electrode being formed graphene nanobelt adopts hydrochloric acid or nitric acid to carry out.
As mentioned above, the manufacture method of graphene field effect pipe of the present invention, has following beneficial effect:
In the technical scheme that the present invention proposes, what utilize AC dielectric swimming structure carries out AC dielectric swimming technique, realize separation and the aligning of single-root carbon nano-tube between the second relative sub-electrode and the 3rd sub-electrode of carbon nano-tube, compared with the mode of other carbon nano-tube, technical scheme of the present invention can realize the accurate aligning of single-root carbon nano-tube in batch;
In addition, in technical scheme provided by the invention, by splash-proofing sputtering metal on the carbon nanotubes, make the ion beam in sputtering technology and sputtered atom destroying carbon nanometer tube, and then remove metal, make removed metal can take away the destroyed Graphene of carbon nano-tube upper surface, retain the Graphene of semiconductor substrate surface, thus realize Single Walled Carbon Nanotube to be cut into graphene nanobelt, form graphene nanobelt on a semiconductor substrate, make it to present typical characteristic of semiconductor, solve the difficult problem that the extreme chirality dependence of metal or semiconducting nanotubes and zero bandgap intrinsic Graphene are applied in future electronic.
In technical scheme provided by the invention, and then prepare graphene field effect device on the graphene nanobelt retained and second sub-electrode at graphene nanobelt two ends and the basis of the 3rd sub-electrode.
Accompanying drawing explanation
Fig. 1 is shown as the flow chart of the manufacture method of the graphene field effect pipe provided in enforcement of the present invention.
Fig. 2 to Figure 11 is shown as the schematic diagram of the manufacture method of the graphene field effect pipe provided in enforcement of the present invention.
Element numbers explanation
Embodiment
The manufacture method of the graphene field effect pipe that the present embodiment provides comprises:
There is provided Semiconductor substrate, described semiconductor substrate surface is formed with silicon dioxide layer;
Form floating potential AC dielectric swimming structure on the semiconductor substrate, described floating potential AC dielectric swimming structure comprises:
First electrode section, the second electrode section and third electrode portion, wherein the first electrode section at least comprises one first sub-electrode, second electrode section at least comprises one second sub-electrode and sub-electrode connecting line, described sub-electrode connecting line runs through and connects all described second sub-electrodes, third electrode portion at least comprises one the 3rd sub-electrode, described first sub-electrode and the second sub-electrode, the second sub-electrode is relative one by one respectively with the top of the 3rd sub-electrode;
Carbon nano tube suspension is formed on the surface of described Semiconductor substrate and floating potential AC dielectric swimming structure;
A carbon nano-tube is connected between the second sub-electrode utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode;
Sputtering technology is utilized to form metal level in described Semiconductor substrate and carbon nano-tube;
The carbon nano-tube removed described metal and be connected with metal, described second sub-electrode, the 3rd sub-electrode and the Semiconductor substrate between the second sub-electrode and the 3rd sub-electrode form graphene nanobelt.
Wherein, in the manufacture method of the graphene field effect pipe that technical scheme of the present invention proposes, what utilize AC dielectric swimming structure carries out AC dielectric swimming technique, realizes separation and the aligning of single-root carbon nano-tube between the second relative sub-electrode and the 3rd sub-electrode of carbon nano-tube; Again by splash-proofing sputtering metal on the carbon nanotubes, make the ion beam destroys carbon nano-tube in sputtering technology, and then remove metal, make removed metal can take away the destroyed Graphene of carbon nano-tube upper surface, retain the Graphene of semiconductor substrate surface, thus realize Single Walled Carbon Nanotube to be cut into graphene nanobelt, form graphene nanobelt on a semiconductor substrate; And then graphene field effect device is prepared on the graphene nanobelt retained and second sub-electrode at graphene nanobelt two ends and the basis of the 3rd sub-electrode.
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Figure 11.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Shown in composition graphs 1, the flow chart of the manufacture method of the graphene field effect pipe that Fig. 1 provides for this enforcement, the manufacture method of concrete described graphene field effect pipe comprises:
First, step S10 is performed: shown in figure 2, provide Semiconductor substrate;
As shown in FIG., described Semiconductor substrate comprises the silicon dioxide layer 101 on silicon substrate 100 and silicon substrate 100 surface.Described silicon substrate 100 is conventional p++ or n++ silicon chip, and as the backgate of the graphene field effect pipe finally formed, described silicon dioxide layer 101 is as the gate dielectric of the graphene field effect pipe finally formed.In the present embodiment, the thickness of described silicon dioxide layer 101 is 300nm.
Next, perform step S20: shown in figure 3 and Fig. 4, form floating potential AC dielectric swimming structure 200 on the semiconductor substrate.Wherein, Fig. 4 is the profile at dashed circle 30 place in Fig. 3.
In this step, described silicon dioxide layer 101 forms described floating potential AC dielectric swimming structure 200.Described floating potential AC dielectric swimming structure 200 is formed for electric conducting material, is generally metal.In the present embodiment, described floating potential AC dielectric swimming structure 200 adopts electron beam exposure to carry out graphical also deposits conductive material, then adopts lift-off technique to prepare.
As shown in Figure 3, concrete, described floating potential AC dielectric swimming structure 200 comprises:
First electrode section 31, second electrode section 32 and third electrode portion 33, wherein the first electrode section 31 at least comprises one first sub-electrode 311, second electrode section 32 at least comprises one second sub-electrode 321 and sub-electrode connecting line 322, described sub-electrode connecting line 322 runs through and connects all described second sub-electrodes 321, third electrode portion 33 at least comprises one the 3rd sub-electrode 331, described first sub-electrode 311 is relative one by one respectively with the top of the 3rd sub-electrode 331 with the second sub-electrode 321, second sub-electrode 321;
In the present embodiment, in order to make described floating potential AC dielectric swimming structure simple and clear, arranging described floating potential AC dielectric swimming structure is zhou duicheng tuxing, and described sub-electrode connecting line is symmetry axis,
In the present embodiment, described first sub-electrode 311 is the triangle that drift angle is relative with the opposed tips of described second sub-electrode 321, and described second sub-electrode 321 is the triangle that drift angle is relative with the opposed tips of described 3rd sub-electrode 331.Specifically can with reference to shown in the details enlarged diagram of dashed circle 30 in figure 3.
Because the top of described first sub-electrode 311, described second sub-electrode 321 and the 3rd sub-electrode 331 is triangle, like this in subsequent technique, relative described first sub-electrode 311 and described second sub-electrode 321, the least possible by the Single Walled Carbon Nanotube of adsorbing between described second sub-electrode 321 and the 3rd sub-electrode 331 can be made, thus realize the aligning of single-root carbon nano-tube 300, and then form the conducting channel of single-root carbon nano-tube.
Next, step S30 is performed: form carbon nano tube suspension on the surface of described Semiconductor substrate and floating potential AC dielectric swimming structure;
In the present embodiment, the preparation technology of the suspension of described carbon nano-tube comprises:
First, the Single Walled Carbon Nanotube raw material of dispersion are distributed in neopelex (NaDDBs), form the mixture of carbon nano-tube and NaDDBs;
Wherein, the described Single Walled Carbon Nanotube raw material by the dispersion technique be distributed in NaDDBs adopts high speed agitator to carry out.
There is between carbon nano-tube very strong Van der Waals force, carbon nano-tube can be made to form pencil and reunite together.Obtain single carbon nano-tube just must be spread out.Adopt high speed agitator to be distributed in NaDDBs by carbon nano-tube raw material in the present embodiment, the pattern of ultrasonic vibration destroying carbon nanometer tube can be avoided, also can shorten the time of dispersing Nano carbon tubes.In the present embodiment, the NaDDBs of employing is surfactant, in other embodiments, also can adopt with other similar organic solvents.
Then, adopt centrifuge to be undertaken centrifugal by the mixture of described carbon nano-tube and NaDDBs, realize preliminary purification, to obtain the suspension only containing Single Walled Carbon Nanotube.
Concrete, centrifuge is adopted in this step, make the carbon contamination precipitation of quality and relatively large carbon nano-tube bundle, metal catalysis particles, amorphous and the fullerene structure of size and gone out by initial gross separation, the remaining uniform and stable suspension containing single Single Walled Carbon Nanotube.
Next, step S40 is performed: shown in figure 5 to Fig. 6, between the second sub-electrode 321 utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode 331, connect a carbon nano-tube 300;
As shown in Figure 5, in this step, when implementing described AC dielectric swimming technique, between described second electrode section 32 and Semiconductor substrate 100, apply alternating current; After having formed the graphene field effect pipe that the present embodiment provides, between described second electrode section 32 and one the 3rd sub-electrode 331, apply direct current, described second electrode section 32 has been positive pole, and described 3rd sub-electrode 331 is negative pole.
Because described second electrode section 32 is made up of with the sub-electrode connecting line 322 running through all second sub-electrodes 321 some second sub-electrodes 321, thus described alternating current to be applied to any one electrode is all equivalent.
For convenience of explanation, in the present embodiment, as shown in Figure 5, region between the first electrode section 31 dashed circle 10 put under and the sub-electrode connecting line 322 of the second electrode section 32 is referred to as control area, and the region between the sub-electrode connecting line 322 of the second electrode section 32 that dashed circle 20 puts under and third electrode portion 33 is referred to as float area.
Wherein, the second sub-electrode 321 relative in float area and the 3rd sub-electrode 331 are the source-drain electrode of the final graphene field effect pipe formed respectively.When graphene field effect pipe works, need to add direct current (DC) bias, as shown in FIG., in direct voltage one termination second electrode section 32, the other end is received on the 3rd sub-electrode 331 in corresponding third electrode portion 33.Described direct voltage is 0V ~ 3V.
After applying alternating current, because Electric Field Distribution has gradient, the electric field of control area is comparatively strong, and the electric field of float area is more weak.Because the conductivity of Aqueous Suspension Containing Carbon Nanotubes is low, cause the current potential of float area more much lower than the current potential of control area like this.Therefore, when the hanging drop of carbon nano-tube is on substrate, because the electric field intensity gradient of control area is comparatively large, what volume was larger does not have the carbon nano-tube bundle of dispersion and impurity can gather on the electrode of control area under strong dielectric active force.So, the first relative sub-electrode 311 in control area and can the larger carbon nano-tube bundle of adsorption volume or wait other impurity between the second sub-electrode 321, can adsorb single-root carbon nano-tube between the second sub-electrode 321 relative in float area and the 3rd sub-electrode 331.The Electric Field Distribution between metal electrode can be regulated by employing floating potential structure.Can realize just in time adsorbing single-root carbon nano-tube 300 between the second sub-electrode 321 relative in float area and the 3rd sub-electrode 331 by regulating the parameter of the alternating current applied, thus realize aligning and the separating-purifying of Single Walled Carbon Nanotube.
In the present embodiment, the amplitude of described alternating voltage is 5V ~ 15V, and frequency is 1MHZ ~ 5MHZ; The time applying alternating voltage is 1min ~ 5min.By controlling the concentration of these parameters and carbon nano-tube solution, can control direction, accuracy and productive rate that single-root carbon nano-tube is aimed at.
As shown in Figure 6, be the profile at dashed circle in Fig. 5 30 place.Visible in figure, single-root carbon nano-tube 300 is shelved on the second relative sub-electrode 321 of floating potential AC dielectric swimming structure 200 and the 3rd sub-electrode 331.
Next, step S50 is performed:
First, shown in figure 7, described Semiconductor substrate 100, floating potential AC dielectric swimming structure 200 and carbon nano-tube 300 form PMMA400;
The mode of described formation PMMA400 can be the spin coating weight certain because PMMA400 has, and the overhanging portion of described carbon nano-tube 300 in the middle of the second sub-electrode 321 and the 3rd sub-electrode 331 be press against silica 1 01 surface be attached between the second sub-electrode 321 and the 3rd sub-electrode 331 by PMMA400.
Then, adopting EBL(electron beam exposure system, electronbeamlithography) technology is graphical by described PMMA, exposes the carbon nano-tube 300 of described carbon nano-tube 300 between the second sub-electrode 321 and the 3rd sub-electrode 331.As shown in Figure 8.And the two ends of carbon nano-tube 300 on the second sub-electrode 321 and the 3rd sub-electrode 331, fixed by PMMA400.
Next, step S60 is performed: shown in figure 9, utilize sputtering technology to form metal level 500 in described Semiconductor substrate and carbon nano-tube;
Described metal level 500 can be Au, Al, Ti, Ni, Y, Nb, Rh, Pd, Ag etc.
Sputtering technology in this step plays a part very important for the last graphene field effect pipe that formed.Because the radiation of the electronics in sputtering technology implementation process, ion, atom, in carbon nano-tube 300, all likely produce the defect of atom level size.And when the energy of sputtered atom is enough large, when exceeding threshold energy, carbon nano-tube can produce the displacement defect of carbon atom.In the present embodiment, adopt Ar+ ion beam to carry out bombardment target in described sputtering technology repeatedly to put into practice through inventor, when splash-proofing sputtering process parameter is suitable, the Ar+ ion beam energy that ionization produces is when 50eV, described Ar+ ion beam can provide metal ion to have suitable energy, the threshold energy that the energy of metallic atom is just caing be compared to the carbon atom generation displacement defect in carbon nano-tube 300 is slightly high, and unnecessary energy is not sufficient to remove extra carbon atom.Thus, can the one dimension carbon atomic layer of destroying carbon nanometer tube 300 upper surface, and don't as removing the one dimension carbon atomic layer of upper surface, the one dimension carbon atomic layer of carbon nano-tube 300 lower surface can be made protected, can not be corrupted to.
In the present embodiment, the Metal Zn sputtered on the semiconductor substrate.Concrete, first by sputter system pumping high vacuum to 3 × 10
-6torr, passing into flow is subsequently that 100sccmAr enters chamber, and adjustable pressure is to 10mTorr, and adding radio-frequency power is 50W pre-sputtering Zn target 10min, goes out the impurity of target material surface.Then start to sputter Zn film 2min.Deng sputter system cools to taking out substrate during room temperature, carbon nano-tube upper surface can be capped one deck Zn film.
Next, perform step S70: with reference to shown in Figure 10, the carbon nano-tube 300 removed described metal level 500 and be connected with metal level 500, described second sub-electrode 321, the 3rd sub-electrode 331 and the Semiconductor substrate between the second sub-electrode 321 and the 3rd sub-electrode 331 form graphene nanobelt 301.
Residual metal level is got rid of by wet etching in this step.
In the present embodiment, the structure on the Semiconductor substrate after step S60 and its surface is put into rare acid solution (as HCl solution) together, wait metal level 500 to dissolve after a few minutes, carbon nano-tube 300 upper surface can be removed, and namely remaining lower surface forms the carbon nanobelts 301 with substrate contact; Then take out Semiconductor substrate, utilize in deionized water and clean; Again Semiconductor substrate is put into acetone and remove PMMA400 and excess metal layer 500; Finally use nitrogen drying.
Next, perform step S80: annealed 1 hour at 300 DEG C in Ar atmosphere by the semiconductor structure obtained in step S70, removal is polluted and strengthened Metal Contact and obtains required carbon nanobelts fieldtron.
In sum, in the manufacture method of the graphene field effect device that the present embodiment provides, the present invention adopts the method for first high-speed stirred to be dispersed in by carbon nano-tube material in NaDDBs medium, the carbon nano tube suspension of centrifugal acquisition preliminary purification subsequently.Adopt floating potential AC dielectric swimming structure to carry out AC dielectric swimming technique, realize separation and the aligning of single-root carbon nano-tube between the second relative sub-electrode and the 3rd sub-electrode of carbon nano-tube; In addition, compared with other carbon nanotubes aligned methods, the present embodiment can realize the accurate aligning of single-root carbon nano-tube in batch.
In addition, in the technical scheme of the present embodiment, by splash-proofing sputtering metal with the Graphene of the upper surface of destroying carbon nanometer tube, remove metal, with the method taking away the Graphene of the upper surface of destroyed carbon nano-tube, Single Walled Carbon Nanotube (SWNTs) etching is become the graphene nanobelt (GNRs) being less than 5nm, make it to present typical characteristic of semiconductor, solve the difficult problem that the extreme chirality dependence of metal or semiconducting nanotubes and zero bandgap intrinsic Graphene are applied in future electronic.
Technical scheme provided by the invention can be applied to FETs, gate and photodetector etc. simultaneously.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (15)
1. a manufacture method for graphene field effect pipe, is characterized in that, the manufacture method of described graphene field effect pipe at least comprises:
There is provided Semiconductor substrate, described semiconductor substrate surface is formed with silicon dioxide layer;
Form floating potential AC dielectric swimming structure on the semiconductor substrate, described floating potential AC dielectric swimming structure comprises:
First electrode section, the second electrode section and third electrode portion, wherein the first electrode section at least comprises one first sub-electrode, second electrode section at least comprises one second sub-electrode and sub-electrode connecting line, described sub-electrode connecting line runs through and connects all described second sub-electrodes, third electrode portion at least comprises one the 3rd sub-electrode, described first sub-electrode and the second sub-electrode, the second sub-electrode is relative one by one respectively with the top of the 3rd sub-electrode;
Carbon nano tube suspension is formed on the surface of described Semiconductor substrate and floating potential AC dielectric swimming structure;
A carbon nano-tube is connected between the second sub-electrode utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode;
Sputtering technology is utilized to form metal level in described Semiconductor substrate and carbon nano-tube; In described sputtering technology, comprise and adopt Ar+ ion beam to carry out bombardment target plate, and suitable sputtering parameter is set ensures that the energy of described Ar+ ion beam is greater than 50eV;
Corrode described metal, after destroying the surface structure of carbon nano-tube be connected with described metal, removal metal level and the upper surface of carbon nano-tube that is connected with described metal are so that the Semiconductor substrate between described second sub-electrode and the 3rd sub-electrode to form graphene nanobelt simultaneously.
2. the manufacture method of graphene field effect pipe according to claim 1, is characterized in that: in described sputtering technology, and the metal of sputtering is Au, Al, Ti, Ni, Y, Nb, Rh, Pd, Ag or Zn.
3. the manufacture method of graphene field effect pipe according to claim 1, it is characterized in that: the described sputtering technology that utilizes is formed in the step of metal level in described Semiconductor substrate and carbon nano-tube, the metal of described sputtering is Zn, and being evacuated to vacuum degree is 3 × 10
-6the flow of Torr, Ar is 100sccm, and air pressure is 10mTorr, and radio-frequency power is 50W, and the time of sputtering is 2min.
4. the manufacture method of graphene field effect pipe according to claim 3, is characterized in that: before described sputtering, also comprises the pre-sputtering of carrying out 10min.
5. the manufacture method of graphene field effect pipe according to claim 1, is characterized in that: in described AC dielectric swimming technique, between described second electrode section and Semiconductor substrate, apply alternating current.
6. the manufacture method of graphene field effect pipe according to claim 5, is characterized in that: the amplitude of described alternating voltage is 5V ~ 15V, and frequency is 1MHZ ~ 5MHZ; The time applying alternating voltage is 1min ~ 5min.
7. the manufacture method of graphene field effect pipe according to claim 1, is characterized in that: the diameter of described carbon nano-tube is 0.6nm ~ 2nm.
8. the manufacture method of graphene field effect pipe according to claim 1, is characterized in that: the preparation technology of the suspension of described carbon nano-tube comprises:
Single Walled Carbon Nanotube raw material are distributed in the basic sodium sulfonate of dodecane, form the mixture of carbon nano-tube and the basic sodium sulfonate of dodecane;
Centrifuge is adopted to be undertaken centrifugal by the mixture of described carbon nano-tube and the basic sodium sulfonate of dodecane.
9. the manufacture method of graphene field effect pipe according to claim 8, is characterized in that: the described technique be distributed to by Single Walled Carbon Nanotube raw material in the basic sodium sulfonate medium of dodecane adopts high speed agitator to carry out.
10. the manufacture method of graphene field effect pipe according to claim 1, it is characterized in that: after the Semiconductor substrate between described second sub-electrode and the 3rd sub-electrode forms the step of graphene nanobelt, also comprise step: utilize acetone to remove PMMA; Isopropyl alcohol is utilized to carry out cleaning; Nitrogen is utilized to carry out drying; Carry out annealing process.
The manufacture method of 11. graphene field effect pipes according to claim 10, is characterized in that: described annealing process carries out in Ar atmosphere, and wherein arranging annealing temperature is 300 DEG C, and annealing time is 1 hour.
The manufacture method of 12. graphene field effect pipes according to claim 1, is characterized in that: the width of described graphene nanobelt is less than 5nm.
The manufacture method of 13. graphene field effect pipes according to claim 1, it is characterized in that: connect the step of a carbon nano-tube between the second sub-electrode utilizing AC dielectric swimming technique to make each relative and the 3rd sub-electrode after, utilize before sputtering technology forms the step of metal level in described Semiconductor substrate and carbon nano-tube, also comprise:
Spin coating PMMA in described Semiconductor substrate, floating potential AC dielectric swimming structure and carbon nano-tube;
Adopt EBL technology that described PMMA is graphical, expose the described carbon nano-tube between the second sub-electrode and the 3rd sub-electrode.
The manufacture method of 14. graphene field effect pipes according to claim 1, it is characterized in that: described first sub-electrode is the triangle that drift angle is relative with the opposed tips of described second sub-electrode, described second sub-electrode is the triangle that drift angle is relative with the opposed tips of described 3rd sub-electrode.
The manufacture method of 15. graphene field effect pipes according to claim 1, it is characterized in that: the described metal of described removal and the surface structure of carbon nano-tube be connected with metal, the step Semiconductor substrate between described second sub-electrode and the 3rd sub-electrode being formed graphene nanobelt adopts hydrochloric acid or nitric acid to carry out.
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