CN108878586A - The light transmission processing system and light transmission processing method of solar chip component - Google Patents
The light transmission processing system and light transmission processing method of solar chip component Download PDFInfo
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- CN108878586A CN108878586A CN201810678615.8A CN201810678615A CN108878586A CN 108878586 A CN108878586 A CN 108878586A CN 201810678615 A CN201810678615 A CN 201810678615A CN 108878586 A CN108878586 A CN 108878586A
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- ink
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- transmission processing
- chip assembly
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- 238000000034 method Methods 0.000 claims description 16
- 238000007650 screen-printing Methods 0.000 claims description 13
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000001723 curing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
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- 229910000278 bentonite Inorganic materials 0.000 description 3
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 3
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- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
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- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 239000012670 alkaline solution Substances 0.000 description 1
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- 238000007664 blowing Methods 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides the light transmission processing system and light transmission processing method of a kind of solar chip component.The light transmission processing system includes：Ink printing element, it, which is configured to be printed out with UV ink in the upper surface of chip assembly, sets pattern, the place of the pattern covering forms UV ink layer, the place not covered by the pattern forms hollow out, and the chip assembly includes the chip layer of transparent substrates with the upper surface for being stacked and placed on the transparent substrates；Solidified cell is configured to solidify the UV ink printed on the chip assembly with UV light, to form UV ink protective film；And layer unit is removed, it is configured to remove the chip layer at the part not covered by the UV ink protective film on the chip assembly.Using light transmission processing system provided by the invention and light transmission processing method, the light transmission processing for forming desired light-transparent pattern can be implemented on chip assembly quickly and effectively, at low cost.
Description
Technical field
The present invention relates to solar energy power generating fields, and in particular to a kind of light transmission processing system of solar chip component
With light transmission processing method.
Background technique
Solar power system or photovoltaic generating system are to be produced using solar battery sheet by photovoltaic effect
Raw DC voltage, by solar radiation energy be converted to electric energy,
And then the system to generate electricity.As people are to energy-saving and environment-friendly pay attention to day by day, solar power system obtains more next
More development opportunities.It wherein, mainly include BAPV system for solar power system and the connected applications of building
(Building Attached Photovoltaic, the solar power system being attached on building) and BIPV system
(Building Integrated Photovoltaic, with building integrated solar electricity generation system) two kinds of forms.Due to
BIPV system itself may replace the construction materials such as curtain wall, roof, solar power system can be incorporated building itself well,
The function of neither influencing house, it is beautiful to guarantee building, and can improve the whole generating efficiency of system, therefore more by people's
Favor.
However, the solar chip component of the light-permeable used in BIPV system at present, or need to be using works such as laser scribes
Skill, equipment is expensive, time-consuming, clear light size is small for processing；Or special transparent chips layer and electrode layer need to be used, it is at high cost, thoroughly
Light effect is poor, affects the development of the technology of BIPV system and other application solar chip component.
Summary of the invention
In order to solve drawbacks described above in the prior art, the present invention provides a kind of light transmission processing system of solar chip component
System and light transmission processing method, so as to quickly and effectively, implement to form the saturating of desired light-transparent pattern on chip assembly at low cost
Light processing.
According to the first aspect of the invention, a kind of light transmission processing system is provided, at the light transmission for solar chip component
Reason, the light transmission processing system include：
Ink printing element is configured to print out setting figure in the upper surface of chip assembly with ultraviolet (UV) light ink
The place of case, the pattern covering forms UV ink layer, and the place not covered by the pattern forms hollow out, the chip assembly
Chip layer including transparent substrates He the upper surface for being stacked and placed on the transparent substrates；
Solidified cell is configured to consolidate the UV ink printed on the chip assembly with ultraviolet (UV) light
Change, to form UV ink protective film；And
Except layer unit, it is configured to remove at the part not covered by the UV ink protective film on the chip assembly
Chip layer.
Ultraviolet (UV) light ink refer to include photopolymerization prepolymer, initiator, colorant and auxiliary agent ink.
Further, borax, bentonite, silica uniform wearability filler are contained in UV light ink.
Preferably, the light transmission processing system further includes transmission line, and the transmission line is configured to be sequentially transmitted the core
Piece component by the ink printing element, the solidified cell and it is described remove layer unit.
Preferably, described except layer unit includes abrasive blast equipment, the abrasive blast equipment is configured to being formed with the UV ink
The upper surface of the chip assembly of protective film carries out blasting treatment, is not protected by the UV ink on the chip assembly with removing
Chip layer at the part of cuticula covering.
Preferably, the nozzle diameter of the abrasive blast equipment is 6~9mm, further, it is preferable to be 8mm.
Preferably, the ink printing element includes screen printing apparatus, and the screen printing apparatus uses polyester net
As halftone.
Preferably, the screen printing apparatus prints the pattern of the UV ink in such a way that one-step print shapes, and
And the pattern for the UV ink printed out with a thickness of 60 μm to 70 μm.
Preferably, the ink printing element includes CCD image positioning device, and the CCD image positioning device is configured to
The halftone and the chip assembly are positioned.
Preferably, the light transmission processing system further includes chemical cleaning unit, and the chemical cleaning unit is configured to warp
It is described except treated that the chip assembly carries out chemical cleaning for layer unit, remove the UV oil formed on the chip assembly
Black protective film.
Preferably, it is concentration that the chemical cleaning unit, which removes chemical cleaning reagent used by the UV ink protective film,
0.3% to 0.5% KOH or NaOH solution, the demoulding time for removing the UV ink protective film is 120 to 130 seconds.
Preferably, the chemical cleaning unit includes apparatus for drying.
Preferably, it is 800mJ/cm that the solidified cell, which includes light intensity,2To 1500mJ/cm2UV solidify mercury lamp.
According to the second aspect of the invention, a kind of light transmission processing method of solar chip component is provided, at the light transmission
Reason method includes the following steps：
A. it is printed out with UV ink in the upper surface of chip assembly and sets pattern, the place of the pattern covering forms UV oil
Layer of ink, the place not covered by the pattern form hollow out, and the chip assembly includes transparent substrates and is stacked and placed on described transparent
The chip layer of the upper surface of substrate；
B. the UV ink printed on the chip assembly is solidified with UV light, to form UV ink protective film；
And
C. the chip layer at the part not covered by the UV ink protective film on the chip assembly is removed.
Preferably, the step c includes：To the upper surface of the chip assembly for being formed with the UV ink protective film into
Row blasting treatment, to remove the chip layer at the part not covered by the UV ink protective film on the chip assembly.
Preferably, shot blasting particles used by the blasting treatment are the white fused alumina of 300 mesh to 350 mesh, blasting pressure 3
To 4 bars (bar), the nozzle diameter for implementing the abrasive blast equipment of the blasting treatment is 8mm.It is highly preferred that shot blasting particles are 320 mesh
White fused alumina.
Preferably, after the step c, the light transmission processing method further includes：Chemistry is carried out to the chip assembly
Cleaning, removes the UV ink protective film formed on the chip assembly.
Preferably, removing chemical cleaning reagent used by the UV ink protective film is concentration 0.3% to 0.5%
The NaOH solution of KOH or 0.3% to 0.5%, the demoulding time for removing the UV ink protective film is 120 seconds to 130 seconds.Separately
Outside, the demoulding temperature for removing the UV ink protective film can be 30 DEG C.
Preferably, described that chemical cleaning is carried out to the chip assembly, remove the UV formed on the chip assembly
The step of ink protective film includes：The chip assembly through over cleaning and demoulding is carried out air-dried.
Preferably, described that the UV ink printed on the chip assembly is solidified with UV light, to form UV oil
The step of black protective film includes：Use light intensity for 800mJ/cm2To 1500mJ/cm2UV light the UV ink is solidified,
Curing time is 30 seconds to 90 seconds.
Preferably, described to include the step of setting pattern is printed out in the upper surface of chip assembly with UV ink：Using silk
Net printing technology prints the pattern of the UV ink using polyester net as halftone in such a way that one-step print shapes, and
The pattern for the UV ink printed out with a thickness of 60 μm to 70 μm.
Preferably, it is described with UV ink the upper surface of chip assembly print out setting pattern the step of before, it is described
Method further includes：The halftone and the chip assembly are positioned using CCD image positioning device.
The light transmission processing system and light transmission processing method of solar chip component provided by the invention, printed using ink,
The mode that UV photocuring combines can quickly and accurately form the UV ink protective film with desired pattern, utilize UV ink
Excellent the resisting of protective film removes layer performance, and the chip layer covered by UV ink protective film can be protected not to be removed, so as to
Quickly, convenient, at low cost on chip assembly implement have desired light-transparent pattern, light transmittance, translucent effect and light transmission ruler
Very little light transmission processing.
Detailed description of the invention
Fig. 1 is the schematic cross sectional views of the chip assembly of pending light transmission processing；
Fig. 2 is the schematic diagram of the light transmission processing system of solar chip component provided in an embodiment of the present invention；
Fig. 3 is the schematic cross sectional views according to the chip assembly of the pattern for being printed with UV ink of the embodiment of the present invention；
Fig. 4 is the schematic cross sectional views according to the chip assembly for having formed UV ink protective film of the embodiment of the present invention；
Fig. 5 is the schematic cross sectional views according to the chip assembly after except layer of the embodiment of the present invention；
Fig. 6 is the exemplary block diagram of ink printing element provided in an embodiment of the present invention；
Fig. 7 is the exemplary block diagram provided in an embodiment of the present invention except layer unit；
Fig. 8 is the schematic diagram of the light transmission processing system of solar chip component provided in an embodiment of the present invention；
Fig. 9 is the schematic cross sectional views according to the chip assembly through over cleaning and demoulding of the embodiment of the present invention；
Figure 10 is to utilize the double glass chipsets of euphotic solar energy manufactured by light transmission processing system provided in an embodiment of the present invention
The schematic cross sectional views of part；
Figure 11 is the plan view of standard solar chip component；And
Figure 12 is to utilize light transmission manufactured by light transmission processing system provided in an embodiment of the present invention and light transmission processing method
The plan view of solar chip component.
Wherein the reference numerals are as follows：
100- chip layer
101- transparent substrates
102- first layer
The 103- second layer
104- third layer
105-UV ink layer
105'-UV ink protective film
106- light-transparent pattern
107- score line
109- encapsulated layer
110- transparent substrates
10- ink printing element
20- solidified cell
30- removes layer unit
31- abrasive blast equipment
32- removes layer positioning device
33- air knife blowing-off equipment
40- chemical cleaning unit
50- transmission line
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawings and examples to this
Invention is described in further detail.
Firstly, the solar chip component (hereinafter abbreviation chip assembly) of pending light transmission processing is introduced.Fig. 1
For the schematic cross sectional views of the chip assembly of pending light transmission processing.The chip assembly of pending light transmission processing, is alternatively referred to as marked
Quasi- chip assembly, the main chip layer including transparent substrates 101 and the upper surface (being above in figure) for being stacked and placed on transparent substrates 101
100.Transparent substrates 101 are generally made of glass (such as tempered glass), but other transparent materials can also be made of crystal etc..
Since solar battery may include that crystalline silicon (including monocrystalline silicon, polysilicon), amorphous/monocrystalline hetero-junctions (HIT), amorphous silicon are thin
Multiple types such as film, cadmium telluride (CdTe) film and copper indium selenide (CIS), therefore, chip layer 100 can have various structures, this hair
It is bright that this is not specially limited.
For example, in an alternative embodiment, chip layer includes the first layer being sequentially stacked in transparent substrates 101
102, the second layer 103 and third layer 104.In an optional example, first layer 102 is preceding electrode layer, and the second layer 103 is to inhale
Layer is received, third layer 104 is transparency conducting layer.In another optional example, it is indium that first layer 102, which is molybdenum layer, the second layer 103,
Gallium selenium (CIGS) layer, third layer 104 are electrically conducting transparent (TCO) layers, and wherein cigs layer 103 is by Cu (copper), In (indium), Ga
The chalcopyrite crystalline film that four kinds of (gallium), Se (selenium) elements are constituted, tco layer 104 is transparent conductive oxide film
(Transparent Conductive Oxide).In another optional example, before first layer 102 is ZnO (zinc oxide)
It is ZnO back electrode layer that electrode layer, the second layer 103, which are film photoelectric conversion layer, third layer 104,.In other optional examples, core
The quantity for the layer that lamella 100 is included can be 1 layer, 2 layers or more than 3 layer.Chip layer 100 be on the whole it is lighttight, therefore,
Light transmission processing before chip assembly be on the whole it is lighttight, need by setting pattern by chip layer 100 a part remove, with
Prepare the euphotic solar energy chip assembly with light-transparent pattern.
Fig. 2 is the schematic diagram of the light transmission processing system of solar chip component provided in an embodiment of the present invention.Such as Fig. 2 institute
Show, the light transmission processing system of the present embodiment includes ink printing element 10, solidified cell 20 and except layer unit 30.
Ink printing element 10, which is configured to be printed out with UV ink in the upper surface of chip assembly, sets pattern, the pattern
The place of covering forms UV ink layer 105, and the place not covered by the pattern forms hollow out, and chip assembly includes transparent substrates
101 and be stacked and placed on transparent substrates 101 upper surface chip layer 100.
Fig. 3 is the schematic cross sectional views of the chip assembly of the pattern for being printed with UV ink of the present embodiment.As shown in figure 3,
The pattern (UV ink layer) 105 for the UV ink that ink printing element 10 is printed is placed in chip layer 100, covers chip layer
100 a part.
Ink printing element 10 can be in scatterplot shape, striated, net in the pattern 105 that the upper surface of chip assembly is printed
Trellis is various other rules or irregular pattern, and the present invention is without limitation.It in practice, can be according to beauty of architecture
, light transmittance requirement, translucent effect the various factors such as require freely to design or select required pattern.It is optional at one
In example, the size of chip assembly is 1190mm × 790mm, and the size of the pattern 105 of UV ink also size or is slightly less than thus
This size.It will be readily appreciated by those skilled in the art that the pattern for the UV ink printed and finally formed transmission region
Pattern is complementary, for example, the pattern of finally formed transmission region is and this if the pattern of UV ink is characters cut in relief text
The characters cut in intaglio text of characters cut in relief text complementation.
Ultraviolet (UV) light ink refer to include photopolymerization prepolymer, initiator, colorant and auxiliary agent ink.
Further, borax, bentonite, silica uniform wearability filler are contained in UV light ink.
UV ink is called UV curable ink, refers under the irradiation of UV light (ultraviolet light), the list in ink adhesive
Body aggregates into polymer, makes ink film forming and dry ink.It has been found that UV ink not only has good printing suitable
Property, suitable curing and drying rate, and the protective film formed after UV photocuring have it is unexpected it is excellent it is anti-except layer, it is anti-
Sandblasting performance, and can be dissolved easily by alkaline solution (such as KOH, NaOH solution).
Solidified cell 20 is configured to solidify the UV ink printed on chip assembly with UV light, to form UV ink guarantor
Cuticula.
Fig. 4 is the schematic sectional according to the chip assembly for having formed UV ink protective film 105' of the embodiment of the present invention
Figure.By the illumination curing of UV light, the UV ink with setting pattern 105 on chip assembly is cured into identical patterns
UV ink protective film 105'.
Except layer unit 30 is configured at the part not covered by UV ink protective film 105' on removal chip assembly (that is, shape
At the part of hollow out) chip layer 100.
Fig. 5 is the schematic cross sectional views according to the chip assembly after except layer of the embodiment of the present invention.As shown in figure 5,
It is not removed by the chip layer 100 at the part M of UV ink protective film 105' covering except layer unit 30 on chip assembly.
Except layer unit 30 can be used chemistry except layer (for example, chemical reagent impregnate, pickling), it is mechanical except layer (for example, sandblasting,
Shot-peening, tumbling) or mechanochemistry it is compound except layer (for example, vapour blasting containing chemical reagent) etc. removes chip except layer mode
Layer 100.
By ink printing element 10, solidified cell 20 and except the above-mentioned processing of layer unit 30, gone on chip assembly
In addition to the part M of chip layer 100 forms light transmission part only including transparent substrates 101.In this way, just being formed on chip assembly
Desired light-transparent pattern.
Using the light transmission processing system of solar chip component provided by the present embodiment, without using expensive laser incising
Equipment is lost, can be implemented on chip assembly quick, convenient, at low cost with desired light-transparent pattern, light transmittance, light transmission effect
The light transmission of fruit and clear light size is handled.It wherein, can be quickly and accurately using the combination of ink printing element and solidified cell
UV ink protective film 105' is formed, and be formed by protective film to have unexpected excellent anti-except layer performance, can protected
The chip layer 100 that cuticula is covered is not removed, and ensure that the product quality of the euphotic solar energy chip assembly of subsequent manufacture.
In a preferred embodiment of the present embodiment, the light transmission processing system of solar chip component further includes transmission line
50.Transmission line 50 is configured to be sequentially transmitted chip assembly by ink printing element 10, solidified cell 20 and except layer unit 30.
Transmission line 50 can be ribbon tr-ansmission line, chain type transmission line, hand type transmission line etc., and the present invention does not limit this
System.In an optional example, as shown in Fig. 2, being separately connected between ink printing element 10 and solidified cell 20, and solidification
Unit 20 and except being connected by transmission line 50 between layer unit 30.In another optional example, transmission line includes by oil
Brush unit 10, solidified cell 20 and an assembly line except layer unit 30 are inked, and chip assembly is delivered to from the assembly line
Each unit and the conveying device (for example, manipulator) that the assembly line is transmitted back to from each unit.In another optional example,
Transmission line 50 is also configured to chip assembly after being delivered to the finished product for being used to manufacture solar chip component except layer unit 30
Continuous unit (such as chemical cleaning unit, encapsulation unit).In another optional example, transmission line 50 includes to the core transmitted
The positioning mechanism that piece component is positioned.
By the way that transmission line 50 is arranged, the integrated degree of the light transmission processing system of solar chip component and automatic is improved
Change degree, has saved manpower, shortens the production time.
In a preferred embodiment of the present embodiment, as shown in fig. 6, ink printing element 10 includes screen printing apparatus
11.Polyester net can be used as halftone in screen printing apparatus 11, and can print UV ink in such a way that one-step print shapes
Pattern 105.
In a preferred embodiment of the present embodiment, the specification of polyester net is 140-31Y or 165-34Y.
In a preferred embodiment of the present embodiment, the pattern 105 for the UV ink printed out with a thickness of 60 μm to 70 μm.
In a preferred embodiment of the present embodiment, as shown in fig. 6, ink printing element 10 further includes CCD (Charge
Coupled Device, charge-coupled device) image positioning device 12, the CCD image positioning device 12 be configured to halftone with
Chip assembly is positioned.
CCD image positioning device is a kind of relative position for halftone and chip assembly or halftone and chip assembly
The equipment for carrying out precision positioning, working principle are as follows：It is the image that the chip assembly just positioned is acquired using CCD camera first,
Then acquired image is compared and analyzed with prestored images, or identifies several reference markers simultaneously from acquired image
These reference markers and pre-stored marker location information are compared and analyzed, location error is calculated, then control driving
Component moving chip component and/or halftone are to predetermined position.
In an example of the present embodiment, as shown in fig. 6, ink printing element 10 further include feeding platform 13 and/or just
Positioning device 14.In an example of the present embodiment, screen printing apparatus 11 includes one of following device or a variety of：From
Between dynamic addition ink device, ink storage, between halftone storage, between halftone cleaning and matched halftone cleaning device (not shown).
Feeding platform 13 is used to for chip assembly being transported to the workbench of ink printing element 10 from transmission line 50.First positioning device 14 is used
In carrying out the relatively low coarse positioning of precision to chip assembly, in some cases, just positioning can also be realized by feeding platform
The function of device.Automatic addition ink device is the UV ink needed for screen printing apparatus 11 adds automatically.Between halftone cleaning/net
Version cleaning device is for cleaning the halftone after being completed for printing.
By using screen printing apparatus 11, the pattern of UV ink can be disposably printed out, printing process is quick, passes through
Ji.By using the CCD image positioning device 12 cooperated with screen printing apparatus 11, required pattern can be accurately printed.
In a preferred embodiment of the present embodiment, solidified cell 20 uses light intensity for 800mJ/cm2To 1500mJ/cm2's
UV light solidifies UV ink, and curing time is 30 seconds to 90 seconds.Wherein, solidified cell 20 may include the light source as UV light
UV solidify mercury lamp.The quantity that UV solidifies mercury lamp can be three.In addition, solidified cell 20 also optionally includes the scanning of CCD line
Detection system and transmission classification stage.
As it can be seen that only needing to obtain within short 30 seconds to 90 seconds with enough anti-except layer performance under suitable light intensity
UV ink protective film 105', substantially increase implement light transmission technique speed.
In a preferred embodiment of the present embodiment, as shown in fig. 7, sandblasting is set except layer unit 30 includes abrasive blast equipment 31
Standby 31 are configured to the upper surface for the chip assembly for being formed with UV ink protective film 105' (that is, where UV ink protective film 105'
One side) carry out blasting treatment, on removal (spraying) chip assembly not by UV ink protective film 105' cover part at
Chip layer 100.
In a preferred embodiment of the present embodiment, shot blasting particles used by abrasive blast equipment 31 are 300 mesh to 350 purposes
White fused alumina, blasting pressure are 3 to 4 bars (bar), nozzle diameter 8mm.
In a preferred embodiment of the present embodiment, as shown in fig. 7, being used except layer unit 30 includes air knife blowing-off equipment 33
In blowing down the impurity on the chip assembly after blasting treatment (for example, the white fused alumina particle of blasting treatment remnants, chip layer clast
Deng).
In a preferred embodiment of the present embodiment, as shown in fig. 7, except layer unit 30 further includes for positioning chip component
Remove layer positioning device 32.
Chip layer 100 is carried out except layer using abrasive blast equipment 31, can rightly with UV ink protective film 105' and
The physical property of chip layer 100 matches, and the exposed part of chip layer 100 is quickly and easily removed, without injuring chip layer
100 part covered by UV ink protective film 105', and can adapt to biggish chip assembly size (for example, 1190mm
×790mm)。
In some cases it is contemplated that the factors such as encapsulation process, circuit connection, product thickness, it is desirable to finally produce
It does not include UV ink protective film 105' in euphotic solar energy chip assembly.
As shown in figure 8, in an optional example of the present embodiment, the light transmission processing system of solar chip component can be with
Including chemical cleaning unit 40.Chemical cleaning unit 40 is configured to through except treated the chip assembly of layer unit 30 carries out chemistry
Cleaning removes the UV ink protective film 105' formed on chip assembly.Chip assembly after removing UV ink protective film 105'
Structure is as shown in Figure 9.
In a preferred embodiment of the present embodiment, used by chemical cleaning unit 40 removes UV ink protective film 105'
Chemical cleaning reagent is the KOH or NaOH solution of concentration 0.3% to 0.5%.In addition, the demoulding time of removing UV ink protective film
It can be 120 to 130 seconds, the demoulding temperature for removing the UV ink protective film can be 30 DEG C.
In a preferred embodiment of the present embodiment, chemical cleaning unit 40 includes apparatus for drying.Apparatus for drying is, for example,
Air knife device, and the quantity of apparatus for drying can be one or more.
In an optional example of the present embodiment, chemical cleaning unit 40 further includes sprinkling equipment, prerinse equipment, medicine
Wash equipment etc..
In an optional example, by the chip assembly except layer processing (such as blasting treatment) by 50 feedingization of transmission line
After learning cleaning unit 40, prerinse is successively carried out by prerinse equipment, wind is carried out by the first air knife device and cuts processing, is washed and is set by medicine
The standby medicine that carries out elutes film process, carries out wind by the second air knife device and cuts processing, carrying out spray cleaning by sprinkling equipment (can be used
The routine such as ionized water cleaning agent), wind is finally carried out by third air knife device and cuts drying process.
By the way that chemical cleaning unit 40 is arranged, it is not only quickly and conveniently stripped of UV ink protective film 105', is reduced too
The thickness and weight of positive energy chip assembly, and the residual impurity on chip assembly is removed, it ensure that solar chip component
Product quality.By the KOH or NaOH solution that use concentration 0.3% to 0.5% as chemical cleaning reagent (demoulding reagent), energy
Enough quick dissolving U V ink, cleaning thoroughly, and do not react with chip layer 100 or transparent substrates.
In addition, it will be appreciated by those skilled in the art that solar chip component is gone back after being carried out above-mentioned light transmission processing
The working process of acceptable following process unit.It as shown in Figure 10, can be by following process unit to the core that light transmission processing is completed
Piece component (see Fig. 9) is packaged, to form encapsulated layer 109 in the upper surface of chip assembly, and in encapsulated chipset
The transparent substrates 110 as backboard are pasted in the upper surface of part, so that being formed has the double glass chips of the euphotic solar energy of light-transparent pattern
Component (for example, CIGS solar double-glass assemblies).These following process units and corresponding processing method are used for the sun with existing respectively
The processing unit of energy chip assembly is similar with processing method, and this will not be detailed here.
In addition, the embodiment of the present invention also provides a kind of light transmission processing method of solar chip component, the light transmission processing
Method includes the following steps：
It is printed out on the upper surface of chip assembly with UV ink and sets pattern, the place of the pattern covering forms UV oil
Layer of ink, the place not covered by the pattern form hollow out, and the chip assembly includes transparent substrates and is stacked and placed on described transparent
The chip layer of the upper surface of substrate；
The UV ink printed on the chip assembly is solidified with UV light, to form UV ink protective film；With
And
Remove the chip layer at the part not covered by the UV ink protective film on the chip assembly.
In a preferred embodiment of the present embodiment, not by the UV ink protective film on the removal chip assembly
The step of chip layer at the part of covering includes：Upper surface to the chip assembly for being formed with the UV ink protective film
Blasting treatment is carried out, to remove the chip layer at the part not covered by the UV ink protective film on the chip assembly.
Ultraviolet (UV) light ink refer to include photopolymerization prepolymer, initiator, colorant and auxiliary agent ink.
Further, borax, bentonite, silica uniform wearability filler are contained in UV light ink.
In a preferred embodiment of the present embodiment, shot blasting particles used by the blasting treatment are 300 to 350 purposes
White fused alumina, blasting pressure are 3 to 4bar, and the nozzle diameter for implementing the abrasive blast equipment 31 of the blasting treatment is 8mm.
In a preferred embodiment of the present embodiment, do not covered by the UV ink protective film on removing the chip assembly
After the step of chip layer at the part of lid, the light transmission processing method further includes：It is clear that chemistry is carried out to the chip assembly
It washes, removes the UV ink protective film formed on the chip assembly.
In a preferred embodiment of the present embodiment, removing chemical cleaning reagent used by the UV ink protective film is
The KOH or NaOH solution of concentration 0.3% to 0.5%, the demoulding time for removing the UV ink protective film is 120 to 130 seconds.
It is described that chemical cleaning is carried out to the chip assembly in a preferred embodiment of the present embodiment, remove the core
The step of UV ink protective film formed on piece component includes：Wind is carried out to the chip assembly through over cleaning and demoulding
It is dry.
In a preferred embodiment of the present embodiment, it is described with UV light to the UV ink printed on the chip assembly
Solidified, includes the step of UV ink protective film to be formed：Use light intensity for 800mJ/cm2To 1500mJ/cm2UV light pair
The UV ink is solidified, and curing time is 30 seconds to 90 seconds.
It is described to print out setting figure in the upper surface of chip assembly with UV ink in a preferred embodiment of the present embodiment
The step of case includes：Using screen printing technique, using polyester net as halftone, institute is printed in such a way that one-step print shapes
The pattern for the UV ink stating the pattern of UV ink, and printing out with a thickness of 60 μm to 70 μm.
In a preferred embodiment of the present embodiment, set in described printed out with UV ink in the upper surface of chip assembly
Before the step of pattern, the method also includes：Using CCD image positioning device to the phase of the halftone and the chip assembly
Position is positioned.
In a preferred embodiment of the present embodiment, after cleaning and removing UV ink protective film, to obtained core
Piece component is packaged, and pastes the transparent substrates as backboard in the upper surface of encapsulated chip assembly, is had to be formed
The double glass chip assemblies (for example, CIGS solar double-glass assemblies) of the euphotic solar energy of light-transparent pattern.
It, can be quick, convenient, inexpensive using the light transmission processing method of solar chip component provided by the present embodiment
Implement the light transmission processing with desired light-transparent pattern, light transmittance, translucent effect and clear light size on chip assembly in ground.Its
In, setting pattern is printed out in the upper surface of chip assembly using UV ink and the UV ink is solidified using UV light,
UV ink protective film can quickly and accurately be formed, and be formed by protective film have it is unexpected excellent anti-except layer performance,
The chip layer that protective film can be protected to be covered is not removed, and ensure that the quality of manufactured solar chip component.Using
Blasting treatment is this to remove layer mode, can rightly match with the physical property of UV ink protective film and chip layer, fastly
Speed, the exposed part for easily removing chip layer, the part covered by UV ink protective film without injuring chip layer, and
It can adapt to biggish chip assembly size (for example, 1190mm × 790mm).By to the chip assembly by removing layer
Cleaning is learned, UV ink protective film is not only quickly and conveniently stripped of, reduces the thickness and weight of solar chip component, and
And the residual impurity on chip assembly is removed, it ensure that the product quality of solar chip component.
Figure 11 shows a kind of schematic plan view of standard solar chip component, schematically shows standard in figure
The chip layer 100 and the score line 107 on chip layer upper surface of solar chip component.Figure 12 shows each reality according to the present invention
Apply the schematic plan view of the manufactured solar chip component of example.It can be seen that manufactured euphotic solar energy chipset
Part has the round point shape light-transparent pattern 106 of proper alignment.
It is understood that the principle that above embodiments and its preferred/optional example are intended to be merely illustrative of the present
And the illustrative embodiments used, however the present invention is not limited thereto.For those skilled in the art,
Without departing from the spirit and substance in the present invention, various changes and modifications can be made therein, these variations and modifications also regard
For protection scope of the present invention.
Claims (14)
1. a kind of light transmission processing system, for handling solar chip component, which is characterized in that the light transmission processing system packet
It includes：
Ink printing element, is configured to be printed out with ultraviolet light UV ink in the upper surface of chip assembly and sets pattern, described
The place of pattern covering forms UV ink layer, and the place not covered by the pattern forms hollow out, and the chip assembly includes saturating
The chip layer of bright substrate and the upper surface for being stacked and placed on the transparent substrates；
Solidified cell is configured to solidify the UV ink printed on the chip assembly with UV light, to form UV
Ink protective film；And
Except layer unit, it is configured to remove the chip at the part not covered by the UV ink protective film on the chip assembly
Layer.
2. light transmission processing system according to claim 1, which is characterized in that the light transmission processing system further includes transmission
Line, the transmission line be configured to be sequentially transmitted the chip assembly by the ink printing element, the solidified cell and
It is described to remove layer unit.
3. light transmission processing system according to claim 1, which is characterized in that described except layer unit includes abrasive blast equipment, institute
Abrasive blast equipment is stated to be configured to carry out blasting treatment to the upper surface for the chip assembly for being formed with the UV ink protective film, with
Remove the chip layer at the part not covered by the UV ink protective film on the chip assembly.
4. light transmission processing system according to any one of claim 1 to 3, which is characterized in that the ink printing element
Including screen printing apparatus, the screen printing apparatus is using polyester net as halftone.
5. light transmission processing system according to claim 4, which is characterized in that the ink printing element further includes charge coupling
Clutch part CCD image positioning device, the CCD image positioning device are configured to determine the halftone and the chip assembly
Position.
6. light transmission processing system according to any one of claim 1 to 3, which is characterized in that the light transmission processing system
Further include chemical cleaning unit, the chemical cleaning unit be configured to through described except layer unit treated the chip assembly
Chemical cleaning is carried out, the UV ink protective film formed on the chip assembly is removed.
7. a kind of method of solar chip component light transmission processing, which is characterized in that the light transmission processing method includes following step
Suddenly：
A. it is printed out with UV ink in the upper surface of chip assembly and sets pattern, the place of the pattern covering forms UV ink
Layer, the place not covered by the pattern form hollow out, and the chip assembly includes transparent substrates and is stacked and placed on the transparent lining
The chip layer of the upper surface at bottom；
B. the UV ink printed on the chip assembly is solidified with UV light, to form UV ink protective film；And
C. the chip layer at the part not covered by the UV ink protective film on the chip assembly is removed.
8. light transmission processing method according to claim 7, which is characterized in that the step c includes：To being formed with the UV
The upper surface of the chip assembly of ink protective film carries out blasting treatment, to remove on the chip assembly not by the UV oil
Chip layer at the part of black protective film covering.
9. light transmission processing method according to claim 8, which is characterized in that shot blasting particles used by the blasting treatment
For the white fused alumina of 300 to 350 mesh, blasting pressure is 3 to 4 bars, and the nozzle diameter for implementing the abrasive blast equipment of the blasting treatment is
8mm。
10. light transmission processing method according to any one of claims 7 to 9, which is characterized in that the step a includes：It adopts
The pattern of the UV ink is printed in such a way that one-step print shapes using polyester net as halftone with screen printing technique,
And the pattern for the UV ink printed out with a thickness of 60 to 70 μm.
11. light transmission processing method according to claim 10, which is characterized in that before the step a, at the light transmission
Reason method further includes：The halftone and the chip assembly are positioned using CCD image positioning device.
12. light transmission processing method according to any one of claims 7 to 9, which is characterized in that after the step c,
The light transmission processing method further includes：Chemical cleaning is carried out to the chip assembly, removes the institute formed on the chip assembly
State UV ink protective film.
13. light transmission processing method according to claim 12, which is characterized in that remove the UV ink protective film and used
Chemical cleaning reagent be concentration 0.3% to 0.5% KOH or 0.3% to 0.5% NaOH solution, remove the UV ink
The demoulding time of protective film is 120 seconds to 130 seconds.
14. light transmission processing method according to any one of claims 7 to 9, which is characterized in that the step b includes：It adopts
It is 800mJ/cm with light intensity2To 1500mJ/cm2UV light the UV ink is solidified, curing time be 30 seconds to 90 seconds.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810678615.8A CN108878586A (en) | 2018-06-27 | 2018-06-27 | The light transmission processing system and light transmission processing method of solar chip component |
| PCT/CN2018/100683 WO2020000596A1 (en) | 2018-06-27 | 2018-08-15 | Light transmission processing system and light transmission processing method used for solar chip assembly |
| JP2018161785A JP2020001365A (en) | 2018-06-27 | 2018-08-30 | Light transmission processing system and light transmission translucent processing method for solar chip module |
| EP18192028.1A EP3588587A1 (en) | 2018-06-27 | 2018-08-31 | Light transmission processing system and method for solar chip module |
| US16/118,493 US20200001592A1 (en) | 2018-06-27 | 2018-08-31 | Light transmission processing system and method for solar chip module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810678615.8A CN108878586A (en) | 2018-06-27 | 2018-06-27 | The light transmission processing system and light transmission processing method of solar chip component |
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| CN108878586A true CN108878586A (en) | 2018-11-23 |
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