CN111628042A - Preparation method of light-transmitting solar cell - Google Patents
Preparation method of light-transmitting solar cell Download PDFInfo
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- CN111628042A CN111628042A CN201910152251.4A CN201910152251A CN111628042A CN 111628042 A CN111628042 A CN 111628042A CN 201910152251 A CN201910152251 A CN 201910152251A CN 111628042 A CN111628042 A CN 111628042A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 86
- 238000010248 power generation Methods 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000011241 protective layer Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000005488 sandblasting Methods 0.000 claims description 18
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 11
- 238000005422 blasting Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000004576 sand Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000006004 Quartz sand Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a preparation method of a light-transmitting solar cell, which comprises the following steps: arranging a photovoltaic power generation layer on the surface of the light-transmitting substrate; arranging a protective layer with a hollow area on the photovoltaic power generation layer; removing a part, corresponding to the hollow-out area of the protective layer, of the photovoltaic power generation layer to expose the light-transmitting substrate; removing the protective layer on the photovoltaic power generation layer; and arranging a light-transmitting panel on the photovoltaic power generation layer to form a light-transmitting solar cell. The method for preparing the light-transmitting solar cell does not need to adopt laser to remove the solar cell, does not cause the loss of the solar cell, has simple preparation process and low processing cost, and is favorable for the popularization and the use of the light-transmitting solar cell.
Description
Technical Field
The invention relates to the technical field of solar energy, in particular to a preparation method of a light-transmitting solar cell.
Background
With the increasing trend of global energy demand, solar energy is seen as one of the most promising, available, renewable energy sources. With the global requirement for environmental protection becoming higher and higher, the power generation mode gradually shifts from traditional thermal power generation and the like to clean energy power generation, and solar power generation is not affected by areas and is widely adopted. In order to better utilize solar energy resources, a transparent solar photovoltaic module is needed, and the transparent solar photovoltaic module can be applied to a window, so that the light-emitting area of a building is increased, more electric energy is generated, and meanwhile, proper illumination brightness can be provided for the indoor space.
At present, most of light-transmitting solar cells are manufactured by using a laser cutting method to manufacture a light-transmitting solar cell module, the solar cells on the surface of a glass-based solar cell are removed by using laser to expose a glass substrate, and the glass with the solar cells removed can transmit light; in addition, the laser technology has high price, low speed and high processing cost.
Disclosure of Invention
In order to solve the problems of large loss, high cost and complex process of a method for preparing a light-transmitting solar cell in the related art, the embodiment of the invention provides a method for preparing a light-transmitting solar cell. The technical scheme is as follows:
the preparation method of the light-transmitting solar cell comprises the following steps:
arranging a photovoltaic power generation layer on the surface of the light-transmitting substrate; arranging a protective layer with a hollow area on the photovoltaic power generation layer; removing a part, corresponding to the hollow-out area of the protective layer, of the photovoltaic power generation layer to expose the light-transmitting substrate; removing the protective layer on the photovoltaic power generation layer; and arranging a light-transmitting panel on the photovoltaic power generation layer to form a light-transmitting solar cell.
Optionally, the light-transmitting solar cell is a copper indium gallium selenide solar cell, and the method for arranging the photovoltaic power generation layer on the surface of the light-transmitting substrate specifically includes: and forming the photovoltaic power generation layer on the surface of the light-transmitting substrate by adopting a magnetron sputtering method, wherein the photovoltaic power generation layer is made of copper indium gallium selenide.
Optionally, the method for arranging the protective layer with the hollowed-out area on the photovoltaic power generation layer specifically includes: and printing the protective layer to the photovoltaic power generation layer by adopting a screen printing process.
Optionally, the protective layer is an ink layer, and the ink layer is ultraviolet curable ink.
Optionally, the method for removing the portion, corresponding to the hollowed-out area of the protective layer, of the photovoltaic power generation layer specifically includes: and removing the photovoltaic power generation layer corresponding to the hollow area of the protective layer by adopting a sand blasting process.
Optionally, the blasting material adopted by the blasting process is one of copper ore sand, quartz sand, carborundum, iron sand and alumina particles.
Optionally, the blasting pressure adopted by the blasting process is 0.1 mpa-1 mpa.
Optionally, the method for arranging the light-transmitting panel on the photovoltaic power generation layer specifically includes: bonding the light transmissive panel to the photovoltaic power generation layer.
Optionally, the material used for bonding the light-transmitting panel and the photovoltaic power generation layer is one of polyvinyl butyral, ethylene-vinyl acetate copolymer and ionic intermediate film.
Optionally, a light-transmitting panel is disposed on the photovoltaic power generation layer, and after the step of forming the light-transmitting solar cell, the method further includes: and integrally laminating the light-transmitting solar cell.
Optionally, the hollowed-out area of the protective layer is at least one of a circle, an ellipse, a triangle, or a polygon.
The technical scheme provided by the embodiment of the invention has the following beneficial effects that the light-transmitting substrate can be exposed by arranging the photovoltaic power generation layer on the surface of the light-transmitting substrate, arranging the protective layer with the hollow area on the photovoltaic power generation layer and removing the part, corresponding to the hollow area of the protective layer, of the photovoltaic power generation layer; removing the protective layer on the photovoltaic power generation layer; and arranging a light-transmitting panel on the photovoltaic power generation layer to form a light-transmitting solar cell. The method does not need to adopt laser to remove the solar cell, does not cause the loss of the solar cell, has simple preparation process and low processing cost, and is beneficial to the popularization and the use of the light-transmitting solar cell.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic step diagram of a method for manufacturing a light-transmitting solar cell according to an embodiment of the invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
The technical scheme provided by the embodiment of the invention relates to a preparation method of a light-transmitting solar cell, as shown in figure 1, the preparation method of the light-transmitting solar cell comprises the following steps:
s101, arranging a photovoltaic power generation layer on the surface of a light-transmitting substrate;
s102, arranging a protective layer with a hollow area on the photovoltaic power generation layer;
s103, removing a part, corresponding to the hollow-out area of the protective layer, of the photovoltaic power generation layer to expose the light-transmitting substrate;
s104, removing the protective layer on the photovoltaic power generation layer;
and S105, arranging a light-transmitting panel on the photovoltaic power generation layer to form a light-transmitting solar cell.
According to the preparation method of the light-transmitting solar cell, the surface of the light-transmitting substrate is provided with the photovoltaic power generation layer, the photovoltaic power generation layer is provided with the protective layer with the hollow area, and the part, corresponding to the hollow area of the protective layer, of the photovoltaic power generation layer is removed, so that the light-transmitting substrate can be exposed; removing the protective layer on the photovoltaic power generation layer; and arranging a light-transmitting panel on the photovoltaic power generation layer to form a light-transmitting solar cell. The method does not need to adopt laser to remove the solar cell, does not cause the loss of the solar cell, has simple preparation process and low processing cost, and is beneficial to the popularization and the use of the light-transmitting solar cell.
In an embodiment, the light-transmitting solar cell is a Copper Indium Gallium Selenide (CIGS) solar cell, the photovoltaic power generation layer is made of copper indium gallium selenide, and the Copper Indium Gallium Selenide (CIGS) solar cell has the advantages of strong light absorption capability, good power generation stability and high conversion efficiency. Of course, in other embodiments, the power generation layer material may be selected from any one of copper indium selenide, copper indium gallium selenide sulfide, copper zinc tin sulfide, and cadmium telluride.
And forming the photovoltaic power generation layer on the surface of the light-transmitting substrate by adopting a magnetron sputtering method. Magnetron sputtering is one type of Physical Vapor Deposition (PVD). The magnetron sputtering method can be used for preparing multi-materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easy control, large coating area, strong adhesive force and the like.
In an embodiment, the method for disposing the protective layer having the hollowed-out region on the photovoltaic power generation layer specifically includes: and printing the protective layer to the photovoltaic power generation layer by adopting a screen printing process, wherein the protective layer is an ink layer. The screen printing technology utilizes the basic principle that the meshes of the image-text part and the non-image-text part of the screen printing plate are ink-permeable and the meshes of the non-image-text part are ink-impermeable to print. When printing, ink is poured into one end of the screen printing plate, a scraping scraper plate is used for applying a certain pressure on the ink part on the screen printing plate, and meanwhile, the ink moves towards the other end of the screen printing plate. The ink is pressed by the scraper blade from the mesh of the image-text part to the printing material during the movement. Therefore, the ink layer with the corresponding pattern can be printed on the photovoltaic power generation layer.
In the prior art, the photovoltaic power generation layer is removed by laser so as to realize the light transmission of the solar cell. The process not only reduces the power of the solar cell, but also damages the edge of the solar cell removed by laser and can not generate power continuously, and the solar cell has extremely high sensitivity to laser scribing or etching, thereby being easy to damage the whole solar cell. And printing ink to the photovoltaic power generation layer by adopting a screen printing process to form a protective layer. In the subsequent removing step, the photovoltaic power generation layer under the ink layer can be protected from being damaged, and meanwhile, the photovoltaic power generation layer corresponding to the hollow-out area of the protective layer is completely removed. Preferably, ultraviolet light curing ink can be selected, and under the irradiation of ultraviolet light, the ink is formed into a film and dried by using the ultraviolet light with different wavelengths and energies, so that an effective protective layer can be formed on the surface of the photovoltaic power generation layer.
In an embodiment, the method for removing the portion of the photovoltaic power generation layer corresponding to the hollowed-out region of the protection layer specifically includes: and removing the photovoltaic power generation layer corresponding to the hollow area of the protective layer by adopting a sand blasting process. The sand blasting process is a process of cleaning and roughening the surface of a matrix by using the impact action of high-speed sand flow. Compressed air is used as power to form a high-speed spray beam to spray the spray material to the surface of a workpiece to be treated at a high speed, so that the appearance or the shape of the outer surface of the workpiece is changed. In this embodiment, the blasting material used in the blasting process may be one of copper ore, quartz sand, silicon carbide, iron sand, and alumina particles. The granularity of the sand blasting is less than 100 mu m, the pressure range adopted by the sand blasting is 0.1-1 mpa, and the sand blasting transmission rate is 100-1500 mm/min. The proper sand blasting intensity, granularity and sand blasting time are selected, so that the best light transmission effect of the solar cell can be achieved, and the integrity of the solar cell is ensured. Taking the sand blasting material as an example, the alumina particle size is in the range of 25-50 μm, the sand blasting strength is 0.2mpa, and the transmission rate is 500 mm/min. Therefore, the part, corresponding to the hollow-out area of the protective layer, in the photovoltaic power generation layer of the solar cell processed by the sand blasting process can be thoroughly removed, so that light transmission of the solar cell is realized. Meanwhile, the photovoltaic power generation layer with the ink protection layer covered on the surface cannot be influenced by sand blasting, and loss of the solar cell is avoided.
And after the photovoltaic power generation layer corresponding to the hollow-out area of the protective layer is removed through a sand blasting process, removing the ink protective layer on the photovoltaic power generation layer. The printing ink protective layer has good bonding performance, can be well combined with the solar cell, has no gap, and ensures that no particles enter the protective layer through the edge of the printing ink protective layer in the sand blasting process to damage the solar cell of the power generation part. Meanwhile, the ink protection layer has separability, and can be removed from the surface of the solar cell by using a physical method after the sand blasting process is finished, and the integrity of the power generation part of the solar cell is ensured.
In one embodiment, the method for disposing the light-transmitting panel on the photovoltaic power generation layer specifically includes: bonding the light transmissive panel to the photovoltaic power generation layer. The light-transmitting panel and the photovoltaic power generation layer are bonded by one of polyvinyl butyral, an ethylene-vinyl acetate copolymer and an ionic intermediate film. The polyvinyl butyral, the ethylene-vinyl acetate copolymer and the ionic intermediate film are used as bonding materials which have high light transmission, and can be completely filled in a gap between the light-transmitting panel and the photovoltaic power generation layer, so that the solar cell has good light transmission and the strength of the solar cell is improved. The strength of the light-transmitting solar cell can be further improved by integrally laminating the bonded light-transmitting solar cell.
In addition, the hollow-out area of the protective layer is at least one of a circle, an ellipse, a triangle or a polygon. The shape of the hollowed-out area of the protective layer determines the shape of the through hole of the photovoltaic power generation layer after the sandblasting process. The transparent substrate and the transparent panel can be made of transparent glass, and have good light transmittance. The light transmittance of the solar cell depends on the shape, pattern and number of the photovoltaic power generation layer through holes. In order to improve the light transmittance of the solar cell, the hollow area of the protective layer is set to be circular, oval, triangular or polygonal, so that the photovoltaic power generation layer with the through holes in the corresponding shapes is obtained after sand blasting treatment. The specific shape of the hollow area can be selected according to the light transmission requirement of the solar cell, and the light transmission performance of the solar cell can be met.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (11)
1. A preparation method of a light-transmitting solar cell is characterized by comprising the following steps:
arranging a photovoltaic power generation layer on the surface of the light-transmitting substrate;
arranging a protective layer with a hollow area on the photovoltaic power generation layer;
removing a part, corresponding to the hollow-out area of the protective layer, of the photovoltaic power generation layer to expose the light-transmitting substrate;
removing the protective layer on the photovoltaic power generation layer;
and arranging a light-transmitting panel on the photovoltaic power generation layer to form a light-transmitting solar cell.
2. The method according to claim 1, wherein the light-transmitting solar cell is a copper indium gallium selenide solar cell, and the method for disposing the photovoltaic power generation layer on the surface of the light-transmitting substrate specifically comprises:
and forming the photovoltaic power generation layer on the surface of the light-transmitting substrate by adopting a magnetron sputtering method, wherein the photovoltaic power generation layer is made of copper indium gallium selenide.
3. The preparation method according to claim 1, wherein the method for providing the protective layer with the hollowed-out region on the photovoltaic power generation layer specifically comprises the following steps:
and printing the protective layer to the photovoltaic power generation layer by adopting a screen printing process.
4. The preparation method according to claim 3, wherein the protective layer is an ink layer, and the ink layer is ultraviolet light curable ink.
5. The preparation method according to claim 1, wherein the method for removing the portion of the photovoltaic power generation layer corresponding to the hollowed-out region of the protective layer specifically comprises:
and removing the photovoltaic power generation layer corresponding to the hollow area of the protective layer by adopting a sand blasting process.
6. The method according to claim 5, wherein the blasting material used in the blasting process is one of copper ore, quartz sand, silicon carbide, iron sand, and alumina particles.
7. The method of claim 5, wherein the blasting process uses a blasting pressure of 0.1mpa to 1 mpa.
8. The method according to claim 1, wherein the method for disposing a light-transmitting panel on the photovoltaic layer comprises:
bonding the light transmissive panel to the photovoltaic power generation layer.
9. The method of claim 8, wherein the light-transmitting panel is bonded to the photovoltaic layer by one of polyvinyl butyral, ethylene-vinyl acetate copolymer, and ionic interlayer.
10. The method according to claim 1, wherein the step of forming a light-transmissive solar cell by disposing a light-transmissive panel on the photovoltaic layer further comprises:
and integrally laminating the light-transmitting solar cell.
11. The method of claim 1, wherein the hollowed-out area of the protective layer is at least one of circular, elliptical, triangular, or polygonal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910152251.4A CN111628042A (en) | 2019-02-28 | 2019-02-28 | Preparation method of light-transmitting solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910152251.4A CN111628042A (en) | 2019-02-28 | 2019-02-28 | Preparation method of light-transmitting solar cell |
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| CN111628042A true CN111628042A (en) | 2020-09-04 |
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| CN201910152251.4A Pending CN111628042A (en) | 2019-02-28 | 2019-02-28 | Preparation method of light-transmitting solar cell |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210414 Address after: 518057 Room 201, building a, No.1 Qianwan 1st Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen City, Guangdong Province Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 101499 5 Fengxiang East Street, Yang Song Town, Huairou District, Beijing. Applicant before: BEIJING HANERGY OPTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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| CI02 | Correction of invention patent application | ||
| CI02 | Correction of invention patent application |
Correction item: Applicant|Address Correct: Beijing Hanergy Photovoltaic Technology Co.,Ltd.|101499 No. 5, Fengxiang East Street, Yangsong Town, Huairou District, Beijing False: Shenzhen Zhengyue Development and Construction Co.,Ltd.|518057 Room 201, Building A, No. 1, Qianwan 1st Road, Qianhai Shenzhen-Hong Kong Cooperation Zone, Shenzhen, Guangdong Province (located in Shenzhen Qianhai Commercial Secretary Co.,Ltd.) Number: 18-01 Volume: 37 |