CN108877961A - A kind of choosing of X-ray broadband can device and preparation method thereof - Google Patents

A kind of choosing of X-ray broadband can device and preparation method thereof Download PDF

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Publication number
CN108877961A
CN108877961A CN201810647471.XA CN201810647471A CN108877961A CN 108877961 A CN108877961 A CN 108877961A CN 201810647471 A CN201810647471 A CN 201810647471A CN 108877961 A CN108877961 A CN 108877961A
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ray
metal layer
thin metal
array
nano
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CN108877961B (en
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袁铮
曹柱荣
牛高
黎宇坤
邓克立
王强强
邓博
陈韬
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Laser Fusion Research Center China Academy of Engineering Physics
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    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21BFUSION REACTORS
    • G21B1/00Thermonuclear fusion reactors
    • G21B1/11Details
    • G21B1/23Optical systems, e.g. for irradiating targets, for heating plasma or for plasma diagnostics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00Energy generation of nuclear origin
    • Y02E30/10Nuclear fusion reactors

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  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
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  • Measurement Of Radiation (AREA)

Abstract

The invention discloses a kind of X-ray broadbands to select energy device, which includes nano column array, thin metal layer and support membrane;Nano column array is produced on the upper surface of thin metal layer, and support membrane is pasted in the lower surface of thin metal layer.The choosing energy device has the advantages that infinitesimal size is small, choosing energy is with high accuracy, can be applied to several microns of spatial discrimination of imaging diagnostic equipment, realizes band spectrum imaging diagnosis.The invention also discloses the production methods that energy device is selected in a kind of X-ray broadband, this method is punched on makrolon material using X-ray lithography technology, it recycles the mode of electrochemical deposition to grow nano-pillar in hole, the nano-pillar that column vertical degree is high, sidewall roughness is good can be formed;It can also be according to energy section feature to be selected, make the square nano column array of any high-aspect-ratio, the band logical that any energy segment limit within the scope of grenz ray may be implemented by the pillar height of flexible design nano-pillar, the material of thin metal layer and thickness and the glancing incidence angles of X-ray selects energy.

Description

A kind of choosing of X-ray broadband can device and preparation method thereof
Technical field
The invention belongs to X-ray optical field, X-ray spectrum diagnostic field and field of micro-Na manufacture, and in particular to a kind of X-ray broadband Choosing energy device and preparation method thereof.
Background technique
It is most of due to the interaction of laser and plasma in laser indirect driving inertial confinement fusion experiment Laser energy is converted into X-ray.By the diagnosis to X-ray, numerous physical parameters in interaction process can be obtained.It is setting When meter drives ICF experiment indirectly, in order to obtain high absorption efficiency and high X-ray transfer efficiency, black chamber cavity wall material is generally adopted With high Z element gold.Laser, which heats the high temperature Au plasmas X-ray radiation that Jin Bi is generated, has significant nonequilibrium behavior, i.e. X-ray Spectrum has certain band spectrum structure, is usually made of M, N, O band spectrum and continuous spectrum.
Black chamber cavity wall material gold(Au)Atomic structure characteristic to Hohlraum radiation compose and its can stream have larger impact, while Au M with radiation to the preheating effect of pellet shell also will seriously affect implosion compression symmetry, therefore need precise measurement Au radiate Share, intensity and band spectrum radiation temporal-spatial evolution process of O, N and M band spectrum in spectrum etc..Therefore, in recent years, ICF research is more closed Infuse Au the X-ray measurement of O, N, M band spectrum and band spectrum emission mask process visual research, therefore band spectrum imaging diagnosis at For the diagnostic device for needing development.
Current band logical diagnostic device mainly has M band XRD, the M band X-ray radiation stream for quantitative measurment Au.Certain A thin layer B is sputtered on the thin Sc filter disc of thickness, then is superimposed the thick Sc filter disc of the hole configurations by the arrangement of certain duty ratio, utilizes thickness The incident intensity of the average effect Wehnelt cathode of thin filter disc transmitance realizes band logical flat-top in conjunction with cathode spectrum response curve.Its The main foundation of choosing energy is that the ABSORPTION EDGE of filter disc material does not have cut-off effect for the sigmatron other than ABSORPTION EDGE. Simultaneously as the Circularhole diameter of thick filter disc is 5um or so, the period is 10um or so, and having a size of micron dimension, which can not Realize that band logical is imaged within ten microns.
It is newest to be based on microchannel plate(MCP)The choosing of transmission-type band logical can be studies have shown that, energy different for incident angle Different soft X-rays, it is different in order of reflection, the reflection ratio of MCP microchannel interior walls, so as to cause transmission of the X-ray after MCP Ratio is different.The element and filter disc cooperation can be achieved narrow energy band and gate, but due to the limitation of MCP manufacture craft itself, it is difficult to real Existing flat-top band logical.Currently, the minimum 6um of MCP microchannel diameter, unit size are unable to reach nanometer scale, are equally not used to Single picture dot is having a size of several microns of band logical imaging diagnosis.
Summary of the invention
A technical problem to be solved by this invention is to provide a kind of X-ray broadband choosing energy device, and the present invention to be solved Another technical problem be to provide a kind of choosing of X-ray broadband can device production method.
Choosing energy device in X-ray broadband of the invention, its main feature is that, the choosing energy device includes nano column array, thin metal Layer and support membrane;The nano column array is the square principal column body of array;Thin metal layer is the gold of metallic aluminium or metallic silver Belong to film;The nano column array is produced on the upper surface of thin metal layer, and support membrane is pasted in the lower surface of thin metal layer.
The nano column array is the gold nanorod array being made of the square principal column body of side length 200nm.
The arrangement mode of the gold nanorod array is equidistant arrangement, and the transversely arranged period is 400nm, longitudinal arrangement Period is 200nm.
The material of the support membrane is polyimides, with a thickness of 2um.
The production method of choosing energy device in X-ray broadband of the invention includes the following steps:
A. it is less than the X-ray of 0.1nm using wavelength in Synchrotron Radiation according to the hole location of design, shape in polycarbonate material X smooth lithography is carried out until breaking into through-hole array;
B. thin metal layer is coated with by the way of magnetron sputtering on the surface of polycarbonate material;
C. polycarbonate material is overturn 180 °, thin metal layer is placed in bottom, in the hole of the through-hole array of polycarbonate material In with electrochemical deposition mode grow gold nanorod, until through-hole array is filled;
D. the polyimide support film that 2um thickness is pasted in the lower surface of thin metal layer, obtains the polycarbonate comprising gold nanorod Block;
E. polycarbonate block is put into dichloromethane solvent, until polycarbonate all dissolves, gold nanorod all exposes, shape At nano column array, needed for obtaining.
The choosing energy principle of choosing energy device in X-ray broadband of the invention is as follows:When the X-ray of complex spectrum is with specific glancing incidence When angle is irradiated in nano-pillar, since the finish of nano-pillar side wall is very high, metallic mirror surface reflection X-ray can be used as, based on gold The glancing incidence principle for belonging to plane mirror is irradiated to the X-ray of nano-pillar side wall, only X-ray energy quilt of the energy lower than cut-off energy Then multiple reflections are irradiated to thin metal layer and support membrane, thin metal layer and support membrane filter low energy X ray, to realize X The band logical of light selects energy.
Select gold nanorod structure of the nano column array by sectional dimension for hundred nano-scale in energy device in X-ray broadband of the invention At the band logical choosing that can be used as unit size only several microns of imaging device can element;Thin metal layer and polyimide support film It can play the role of low energy cut-off filter disc, the glancing incidence effect of nano-pillar side wall can realize that high energy ends, be equivalent to and cut low energy Only filter disc and high energy cut off member are combined into an entirety, reduce cooperation difficulty, improve service efficiency.
The production method of choosing energy device in X-ray broadband of the invention is beaten on makrolon material using X-ray lithography technology Hole recycles the mode of electrochemical deposition to grow nano-pillar in hole, and it is good can to form column vertical degree height, sidewall roughness Nano-pillar effectively improves the throughput of X-ray broadband choosing energy device;Also high-aspect-ratio can be made according to energy section feature to be selected Square nano column array passes through plunderring for the pillar height of flexible design nano-pillar, the material of thin metal layer and thickness and X-ray The band logical that any energy segment limit within the scope of grenz ray may be implemented in incident angle selects energy.
X-ray broadband choosing of the invention can device be small with infinitesimal size, choosing can precision be high, service efficiency is high, band logical energy section Any optional advantage, can be applied to several microns of spatial discrimination of imaging diagnostic equipment, realize band spectrum imaging diagnosis.The present invention X-ray broadband choosing can device production method it is simple, strong operability, high yield rate.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of choosing energy device in X-ray broadband of the invention;
Fig. 2 is the flow diagram of the production method of choosing energy device in X-ray broadband of the invention;
Fig. 3 is the nano column array arrangement mode schematic diagram in choosing energy device in X-ray broadband of the invention;
Fig. 4 is the transmittance curve that energy device is selected in X-ray broadband(Grazing angle θ=2 °, thin metal layer are the silver of 200nm thickness, nanometer Column side length is 200nm, a height of 8um of nano-pillar);
Fig. 5 is the transmittance curve that energy device is selected in X-ray broadband(Grazing angle θ=2 °, thin metal layer are the aluminium of 2um thickness, nano-pillar Side length is 200nm, a height of 8um of nano-pillar);
Fig. 6 is the transmittance curve that energy device is selected in X-ray broadband(Grazing angle θ=3.4 °, thin metal layer are the silver of 200nm thickness, are received Rice column side length is 200nm, a height of 12um of nano-pillar);
Fig. 7 is the transmittance curve that energy device is selected in X-ray broadband(Grazing angle θ=1 °, thin metal layer are the silver of 2um thickness, nano-pillar Side length is 200nm, a height of 12um of nano-pillar).
In figure, 1. nano column array, 2. thin metal layer, 3. support membrane θ is grazing angle, that is, incident ray and nanometer The angle of column side wall.
Specific embodiment
Below by drawings and examples, the present invention will be described in detail.
As shown in Figure 1, choosing energy device in X-ray broadband of the invention includes nano column array 1, thin metal layer 2 and support membrane 3; The nano column array 1 is the square principal column body of array;Thin metal layer 2 is the metal film of metallic aluminium or metallic silver;It is described Nano column array 1 be produced on the upper surface of thin metal layer 2, support membrane 3 is pasted in the lower surface of thin metal layer 2.
The nano column array 1 is the gold nanorod array being made of the square principal column body of side length 200nm.
The arrangement mode of the gold nanorod array is equidistant arrangement as shown in Figure 2, and the transversely arranged period is 400nm, longitudinal arrangement period are 200nm.
The material of the support membrane 3 is polyimides, with a thickness of 2um.
As shown in figure 3, the production method of choosing energy device in X-ray broadband of the invention includes the following steps:
A. it is less than the X-ray of 0.1nm using wavelength in Synchrotron Radiation according to the hole location of design, shape in polycarbonate material X smooth lithography is carried out until breaking into through-hole array;
B. thin metal layer 2 is coated with by the way of magnetron sputtering on the surface of polycarbonate material;
C. polycarbonate material is overturn 180 °, thin metal layer 2 is placed in bottom, in the hole of the through-hole array of polycarbonate material In with electrochemical deposition mode grow gold nanorod, until through-hole array is filled;
D. the polyimide support film 3 that 2um thickness is pasted in the lower surface of thin metal layer 2, obtains the poly- carbonic acid comprising gold nanorod Rouge block;
E. polycarbonate block is put into dichloromethane solvent, until polycarbonate all dissolves, gold nanorod all exposes, shape At nano column array 1, needed for obtaining.
Embodiment 1
X-ray of the present embodiment using wavelength in Synchrotron Radiation less than 0.1nm carries out X smooth lithography, and hole is square, and side length is 200nm, punching depth are 8um, and the arrangement mode in hole is as shown in Figure 3.It is splashed on the polycarbonate surface for completing punching using magnetic control The metal Ag that the mode penetrated is coated with a thickness of 200nm.Then the mode of electrochemical deposition is used in the positive hole of thin metal layer 2 Au nano-pillar is grown, until hole is filled.The polyimide support film 3 of one layer of 2um thickness is pasted at the back side of thin metal layer 2. Finally polycarbonate is dissolved using organic solvent dichloromethane, forms the nano column array for having polyimide support film 3.
After the X-ray of complex spectrum is irradiated on nano column array 1 with 2 ° of grazing angle, X-ray passes through Au nano-pillar 1 The reflection and absorption at top and side wall, thin metal layer 2 and support membrane 3, transmittance curve such as Fig. 4 institute of X-ray broadband choosing energy device Show, gating energy band range is 1000eV ~ 2100eV.
Embodiment 2
The present embodiment and the embodiment of embodiment 1 are essentially identical, and the main distinction is, on the polycarbonate surface for completing punching The thin metal layer for using the mode of magnetron sputtering to be coated with is the metal Al of 2um thickness.When the X-ray of complex spectrum is with 2 ° of grazing angle After being irradiated on nano column array 1, X-ray by the top of Au nano-pillar with the reflection of side wall, thin metal layer 2 and support membrane 3 with It absorbs, the transmittance curve of X-ray broadband choosing energy device is as shown in figure 5, it is 800eV ~ 1600eV that it, which gates energy band range,.
Embodiment 3
The present embodiment and the embodiment of embodiment 1 are essentially identical, and the main distinction is, grazing angle is 3.4 °.When complicated light After the X-ray of spectrum is irradiated on nano column array 1 with 3.4 ° of grazing angle, X-ray is by Au nano-pillar top and side wall, Bao Jin Belong to the reflection and absorption of layer 2 and support membrane 3, the transmittance curve of X-ray broadband choosing energy device is as shown in fig. 6, it gates energy band model It encloses for 400eV ~ 1400eV, the N band energy section comprising Au.Before the device is placed in framing camera photocathode, it can be used for the black chamber spoke of gold Penetrate the N band spectrum radiation frame imaging diagnosis in spectrum.
Embodiment 4
The present embodiment and the embodiment of embodiment 1 are essentially identical, and the main distinction is, the punching depth of polycarbonate is 12um, in the thin metal layer that the polycarbonate surface for completing punching uses the mode of magnetron sputtering to be coated with for the metal Ag of 2um thickness, Grazing angle is 1 ° simultaneously.After the X-ray of complex spectrum is irradiated on nano column array 1 with 1 ° of grazing angle, X-ray is passed through With the reflection and absorption of side wall, thin metal layer 2 and support membrane 3 at the top of Au nano-pillar, the transmittance curve of energy device is selected in X-ray broadband As shown in fig. 7, it is 2000 ~ 3250eV that it, which gates energy band range, the M band comprising Au can section.The device is placed in framing camera light Before cathode, the M band spectrum radiation frame imaging that can be used in golden Hohlraum radiation spectrum is diagnosed.

Claims (5)

1. a kind of X-ray broadband choosing energy device, it is characterised in that:The choosing energy device includes nano column array(1), thin metal layer (2)And support membrane(3);The nano column array(1)For the square principal column body of array;Thin metal layer(2)For metallic aluminium or The metal film of metallic silver;The nano column array(1)It is produced on thin metal layer(2)Upper surface, thin metal layer(2)Following table Paste support membrane in face(3).
2. choosing energy device in X-ray broadband according to claim 1, it is characterised in that:The nano column array(1)For by side The gold nanorod array that the square principal column body of long 200nm is constituted.
3. choosing energy device in X-ray broadband according to claim 2, it is characterised in that:The arrangement of the gold nanorod array Mode is equidistant arrangement, and the transversely arranged period is 400nm, and the longitudinal arrangement period is 200nm.
4. choosing energy device in X-ray broadband according to claim 1, it is characterised in that:The support membrane(3)Material be poly- Acid imide, with a thickness of 2um.
5. a kind of production method of X-ray broadband choosing energy device, which is characterized in that the production method includes the following steps:
A. it is less than the X-ray of 0.1nm using wavelength in Synchrotron Radiation according to the hole location of design, shape in polycarbonate material X smooth lithography is carried out until breaking into through-hole array;
B. thin metal layer is coated with by the way of magnetron sputtering on the surface of polycarbonate material(2);
C. polycarbonate material is overturn 180 °, thin metal layer(2)It is placed in bottom, in the hole of the through-hole array of polycarbonate material Gold nanorod is grown with electrochemical deposition mode in hole, until through-hole array is filled;
D. in thin metal layer(2)Lower surface paste 2um thickness polyimide support film(3), obtain poly- comprising gold nanorod Carbonic ether block;
E. polycarbonate block is put into dichloromethane solvent, until polycarbonate all dissolves, gold nanorod all exposes, shape At nano column array(1), needed for obtaining.
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