CN111129183A - Broadband light absorber structure and preparation method thereof - Google Patents
Broadband light absorber structure and preparation method thereof Download PDFInfo
- Publication number
- CN111129183A CN111129183A CN201911372212.1A CN201911372212A CN111129183A CN 111129183 A CN111129183 A CN 111129183A CN 201911372212 A CN201911372212 A CN 201911372212A CN 111129183 A CN111129183 A CN 111129183A
- Authority
- CN
- China
- Prior art keywords
- nanometers
- aao
- layer
- aluminum oxide
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002905 metal composite material Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims abstract description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 33
- 239000011521 glass Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 17
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 17
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 17
- 239000002390 adhesive tape Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001771 vacuum deposition Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 238000000861 blow drying Methods 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- 230000031700 light absorption Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 239000000523 sample Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000011572 manganese Substances 0.000 description 5
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910005703 Ge—Ag Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000000233 ultraviolet lithography Methods 0.000 description 2
- 244000248349 Citrus limon Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 241000409201 Luina Species 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229930003427 Vitamin E Natural products 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- GVJHHUAWPYXKBD-UHFFFAOYSA-N d-alpha-tocopherol Natural products OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WIGCFUFOHFEKBI-UHFFFAOYSA-N gamma-tocopherol Natural products CC(C)CCCC(C)CCCC(C)CCCC1CCC2C(C)C(O)C(C)C(C)C2O1 WIGCFUFOHFEKBI-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011709 vitamin E Substances 0.000 description 1
- 229940046009 vitamin E Drugs 0.000 description 1
- 235000019165 vitamin E Nutrition 0.000 description 1
- -1 vitamin E ester Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Laminated Bodies (AREA)
Abstract
The invention belongs to the technical field of absorber photonic devices, and discloses a broadband light absorber structure which comprises an aluminum oxide packaging layer, an anodic aluminum oxide template AAO and 2-30 inverted cone-shaped medium/metal composite layers, wherein the thickness of the aluminum oxide packaging layer is 0.5-5 nanometers, the thickness of the anodic aluminum oxide template AAO is 100-1500 nanometers, the thickness of a medium in each medium/metal composite layer is 1-150 nanometers, and the thickness of a metal is 1-50 nanometers. The invention also relates to a preparation method of the broadband light absorber structure. The invention has high efficiency of absorbing solar light.
Description
Technical Field
The invention belongs to the technical field of absorber photonic devices, and particularly relates to a broadband light absorber structure and a preparation method thereof.
Background
For applications such as light/heat detection, solar energy conversion, and infrared imaging, the efficiency and bandwidth of the absorber will ultimately limit the overall system performance. The design of an ideal absorbent body generally comprises three key elements: effective anti-reflection, high optical mode density and effective absorption of strong optical coupling. However, the efficiency of the conventional light absorption structure for converting electromagnetic energy into heat energy is not high, and the inherent working band of the material limits the requirements of practical application. In recent years, people propose to improve the light absorption characteristic of the structure by utilizing the surface plasmon effect, and the light absorption efficiency and the bandwidth of the device are remarkably increased by adjusting parameters such as materials, structures and the like, so that the limitation of the traditional technology is broken through in principle.
However, researchers have generally employed expensive ultraviolet lithography, electron beam exposure, or focused ion beam etching techniques to fabricate surface plasmon light absorbing structures, which have somewhat limited their applications. The preparation of large-area short-range ordered nano arrays by using an ultrathin Anodic Aluminum Oxide (AAO) template as a mask is reported successively, the process gets rid of the dependence on an expensive processing process, and a new technical approach is provided for the development of broadband light absorbers. The invention provides a method for preparing a broadband absorber structure by utilizing an AAO template, depositing a metal-medium alternating multilayer film and a silver back reflecting layer above the AAO template and transferring the structure onto a flexible adhesive tape substrate. The invention is different from the traditional broadband light absorber, the AAO template has a natural anti-reflection function, the inverted cone-shaped hole-shaped metal-medium alternating multilayer film positioned below the AAO template can efficiently absorb light in a wide spectrum range, and the packaging layer can make the device more stable and avoid the corrosion of water, oxygen and the like in the air. And the broadband light absorption structure is prepared on the flexible substrate, so that the broadband light absorption structure has better flexibility.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to use an ultrathin anodized aluminum template as a mask to realize simple and low-cost preparation of a large-area broadband light absorber structure.
The technical scheme adopted by the invention is as follows: a broadband light absorber structure is composed of an aluminum oxide packaging layer, an anodic aluminum oxide template AAO and 2-30 inverted cone-hole-shaped medium/metal composite layers, wherein the thickness of the aluminum oxide packaging layer is 0.5-5 nanometers, the thickness of the anodic aluminum oxide template AAO is 100-1500 nanometers, the thickness of a medium in each layer of medium/metal composite layer is 1-150 nanometers, and the thickness of a metal in each layer of medium/metal composite layer is 1-50 nanometers.
In the medium/metal composite layer, the medium material is oxide or a quaternary element, and the metal material is simple substance metal.
The oxide is one of titanium dioxide, silicon dioxide, molybdenum trioxide, copper oxide, aluminum oxide, magnesium oxide and the like, the four-group element is one of silicon, germanium and the like, and the simple substance metal is one of gold, silver, platinum, copper, aluminum, iron, chromium, manganese, titanium, nickel, tungsten, zinc and the like.
The diameter of the inverted cone hole-shaped medium/metal composite layer is 80-1000 nanometers, the hole depth is 150-2000 nanometers, and the hole distance is 80-1000 nanometers.
The preparation method of the broadband light absorber structure comprises the following steps
Taking a glass slide of a glass material as a glass substrate, sequentially carrying out ultrasonic cleaning on the glass slide with deionized water, absolute ethyl alcohol and isopropanol in an ultrasonic cleaning machine for 20 minutes respectively, then carrying out blow-drying on the glass slide with nitrogen, and placing the glass slide in an oxygen plasma cleaning machine for cleaning for 5 minutes;
step two, transferring the ultrathin bi-pass anodic alumina film, laying the PMMA/AAO film on a glass slide by using tweezers, enabling the AAO surface to face the substrate, simultaneously clamping the glass substrate and the PMMA/AAO film by using the tweezers, vertically inserting the glass substrate and the PMMA/AAO film into acetone for soaking, and removing PMMA on the PMMA/AAO film to form an anodic alumina template AAO;
depositing a cone-hole-shaped medium/metal composite layer above the anodic aluminum oxide template AAO, and depositing a medium layer and a metal layer in a vacuum vapor deposition system by using a vacuum coating method, wherein the thickness of the medium layer is 1-150 nanometers, and the thickness of the metal layer is 1-50 nanometers;
step four, repeating the step three for 1-29 times, and forming a cone-hole-shaped medium/metal composite layer with the thickness of 100-1500 nm above the AAO template;
transferring the cone-hole-shaped medium/metal composite layer onto a flexible substrate of the adhesive tape, wherein the structure above the adhesive tape sequentially comprises the cone-hole-shaped medium/metal composite layer and an ultrathin bi-pass anodic alumina template;
and sixthly, conformally depositing an aluminum oxide packaging layer above the structure obtained in the fifth step by using an atomic layer deposition method by using a vacuum coating method, wherein the deposition thickness is 0.5-5 nanometers, thus the preparation of the broadband light absorber structure is completed, and light is incident into the device from the aluminum oxide packaging layer.
The vacuum coating method is one of electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition, pulsed laser deposition, microwave plasma chemical vapor deposition and ultrasonic chemical deposition.
The holes on the anodic aluminum oxide template AAO are hexagonal close-packed nano-hole arrays with short range order, the hole spacing of the nano-hole arrays is 80-1000 nanometers, the hole diameter is 80-1000 nanometers, and the hole depth is 100-1500 nanometers.
The invention has the beneficial effects that: the broadband light absorber prepared by the invention is structurally provided with the inverted cone-shaped hole-shaped medium/metal composite layer nano array, and the growth shape of the inverted cone-shaped hole nano array is controlled by using the ultrathin bi-pass anodic alumina film with large area and short range order as a mask. When the metal film of the inverted cone-hole nano array is prepared, a metal material is deposited by using a vacuum coating method.
Drawings
FIG. 1 is a schematic top view of the structure of the present invention;
FIG. 2 is a schematic of the layer structure of the present invention;
FIG. 3 is a SEM illustration of a structure of the present invention, (a) a top view, and (b) a cross-sectional view;
FIG. 4 is a multi-cycle TiO2A spectrogram of an Ag broadband light absorber structure in the wavelength range of 300 nm to 2500 nm, (a) a reflection diagram, (b) a transmission diagram, (c) an absorption diagram;
FIG. 5 is a multicycle MoO3A spectrogram of an Ag broadband light absorber structure in the wavelength range of 300 nm to 2500 nm, (a) a reflection diagram, (b) a transmission diagram, (c) an absorption diagram;
FIG. 6 is a multicycle MoO3A spectrogram of an Au broadband light absorber structure in the wavelength range of 300 nm to 2500 nm, (a) a reflection diagram, (b) a transmission diagram, (c) an absorption diagram;
figure 7 is a spectral plot of a multicycle Ge-Ag broadband light absorber structure over the wavelength range of 300 nm to 2500 nm, (a) a reflectance plot, (b) a transmission plot, and (c) an absorption plot.
The specific implementation mode is as follows:
the materials used in the present invention are:
high purity titanium dioxide (TiO)2) High purity silicon dioxide (SiO)2) High purity molybdenum trioxide (MoO)3) High-purity copper oxide (CuO), and high-purity alumina (Al)2O3) The high-purity aluminum-magnesium alloy material comprises high-purity magnesium oxide (MgO), high-purity silicon (Si), high-purity germanium (Ge), high-purity gold (Au), high-purity platinum (Pt), high-purity silver (Ag), high-purity titanium (Ti), high-purity copper (Cu), high-purity aluminum (Al), high-purity iron (Fe), high-purity tungsten (W), high-purity chromium (Cr), high-purity manganese (Mn), high-purity nickel (Ni), high-purity zinc (Zn), ultrathin bi-pass Anodic Aluminum Oxide (AAO), glass flakes, acetone, ethanol, isopropanol, deionized water, Sodium Dodecyl Sulfate (SDS), vertical white detergent (the components of which are softened water, surfactant, vitamin E ester and lemon essence), nitrogen and adhesive tape.
The combined dosage is as follows:
titanium dioxide: TiO 221g±0.01 g
Silicon dioxide: SiO 221g±0.01 g
Molybdenum trioxide: MoO31g±0.01 g
Copper oxide: CuO 1 g. + -. 0.01 g
Alumina: al (Al)2O31g±0.01 g
Magnesium oxide: MgO 1 g. + -. 0.01 g
Silicon: si 1 g. + -. 0.01 g
Germanium: ge 1 g. + -. 0.01 g
Gold: au 5 g. + -. 0.01 g
Platinum: pt 5 g. + -. 0.01 g
Silver: ag 5 g. + -. 0.01 g
Titanium: ti 5 g. + -. 0.01 g
Copper: cu 5 g. + -. 0.01 g
Iron: fe 5 g. + -. 0.01 g
Tungsten: w5 g. + -. 0.01 g
Aluminum: al 5 g. + -. 0.01 g
Chromium: cr 5 g. + -. 0.01 g
Manganese: mn 5 g. + -. 0.01 g
Nickel: ni 5 g. + -. 0.01 g
Zinc: zn 5 g. + -. 0.01 g
Deionized water: h2O 2000 ml±50 ml
Sodium Dodecyl Sulfate (SDS): 1. + -. 0.5 g
Liquid detergent: 2. + -. 0.5 ml
Acetone: CH (CH)3COCH360 ml±5 ml
Ethanol: 250 ml of
Isopropyl alcohol: 250 ml of
Glass slide: 10-100 mm 1 mm
Ultrathin bi-pass anodic aluminum oxide films: area of 10-100 mm multiplied by 10-100 mm
The preparation method comprises the following steps:
(1) selecting chemicals
The chemical materials required for preparation are selected, and the quality, purity, concentration, fineness, precision and the like of the chemical materials are controlled, and the chemical materials are as follows:
titanium dioxide (TiO)2): fixing devicePowder/target, purity 99.99%
Silicon dioxide (SiO)2): solid powder/target, purity 99.99%
Molybdenum trioxide (MoO)3): solid powder/target, purity 99.99%
Copper oxide (CuO): solid powder/target, purity 99.99%
Alumina (Al)2O3): solid powder/target, purity 99.99%
Iron oxide (Fe)2O3): solid powder/target, purity 99.99%
Magnesium oxide (MgO): solid powder/target, purity 99.99%
Gold (Au): solid particles/target, purity 99.99%
Platinum (Pt): solid particles/target, purity 99.99%
Silver (Ag): solid particles/target, purity 99.99%
Titanium (Ti): solid particles/target, purity 99.99%
Copper (Cu): solid particles/target, purity 99.99%
Aluminum (Al): solid particles/target, purity 99.99%
Tungsten (W): solid particles/target, purity 99.99%
Iron (Fe): solid particles/target, purity 99.99%
Chromium (Cr): solid particles/target, purity 99.99%
Manganese (Mn): solid particles/target, purity 99.99%
Nickel (Ni): solid particles/target, purity 99.99%
Zinc (Zn): solid particles/target, purity 99.99%
Absolute ethyl alcohol (C)2H5OH): liquid with purity of 99.5%
Acetone (CH)3COCH3): liquid with purity of 99.5%
Deionized water (H)2O): liquid with purity of 99.99 percent
Isopropanol (C)3H8OH): liquid with purity of 99.5%
Glass slide: solid, transmittance 99%
Ultrathin bi-pass anodic aluminum oxide films: pore spacing of 100 nm, pore diameter of 100 nm, and film thickness of 1000 nm
(2) Cutting and cleaning of slides
Cutting the glass slide into a proper size by using a glass cutter, adding detergent for rubbing, washing the glass slide by using clean water, and sequentially ultrasonically cleaning the glass slide by using deionized water, absolute ethyl alcohol and isopropanol for 20 minutes respectively. Taking out, drying by using nitrogen, and cleaning for 5 minutes by using an oxygen plasma cleaning machine for later use.
(3) Transfer of ultra-thin bi-pass anodized aluminum template
1) A PMMA/AAO film of the appropriate size was cut with scissors and placed on a glass slide with tweezers (with the AAO side facing the substrate). The substrate is held by tweezers at a point on the edge of the PMMA/AAO film, the substrate is erected, and then the substrate is slowly inserted into acetone, so that 60% -80% of the AAO film is immersed in the acetone (the height of the acetone liquid level is controlled).
2) The substrate can be placed against the inner wall of the container and soaked for a while, the PMMA begins to fall off below the liquid level, and the PMMA falls off after about 3 minutes.
3) The substrate absorbed with the AAO film is slowly lifted up with tweezers at an included angle of 45 degrees with the liquid surface, and at the moment, the AAO is pressed on the substrate at the position where the liquid surface passes through due to the surface tension of the acetone.
4) And after the acetone on the surface of the sample is volatilized, soaking the other end of the PMMA/AAO film in the acetone solution for about 3 minutes to enable the residual PMMA to fall off.
5) And taking the substrate out of the acetone, slowly and completely soaking the substrate with the adsorbed AAO into a second cup of acetone for a few minutes after the acetone on the surface of the substrate is volatilized, and removing the residual PMMA.
6) And taking the substrate out, repeating the soaking step once after the acetone is volatilized, and attaching the AAO film to the substrate after the acetone is volatilized to dry.
(4) Vacuum physical/chemical vapor deposition, matter state conversion, film growth and preparation of inverted cone cave-shaped composite material nano array
1) The preparation is carried out in a vacuum coating chamber;
2) placing the sample transferred with the two-way anodic aluminum oxide film
3) Placing a medium/metal material required by vacuum coating;
4) depositing a dielectric layer, wherein the thickness of a deposited film layer is 100 nanometers +/-0.1 nanometer;
5) depositing a metal layer, wherein the thickness of a deposited film layer is 30 nanometers +/-0.1 nanometer;
6) repeating the processes of 4) and 5), and sequentially and alternately depositing the medium/metal film for 10 times to realize the preparation of the multilayer film.
In the preparation process, the thickness measuring probe measures the deposition thickness, and the thickness value is displayed by the display screen;
during the preparation process, the deposition process and conditions were observed from the intermediate observation window;
7) collecting a product: sample with inverted cone-hole nano-array structure
(5) Transfer ultrathin bi-pass anodic aluminum oxide template
Placing a nano array sample deposited without removing the AAO template on a flat experiment table, cutting an adhesive tape with the size equivalent to that of the AAO template by using scissors, clamping the edge position of the adhesive tape by using forceps, then slowly placing the adhesive tape on the AAO template, slightly pressing the adhesive tape to ensure that the adhesive tape is attached to the sample, finally slowly removing the adhesive tape, removing the AAO template along with the adhesive tape, wherein the sample left above the adhesive tape is the inverted-cone-hole-shaped broadband light absorber structure sample, and the structure above the adhesive tape sequentially comprises a cone-hole-shaped medium/metal composite layer and an ultrathin bi-pass anodic aluminum oxide template.
(6) Vacuum chemical vapor deposition, matter state conversion, film growth and preparation of aluminum oxide packaging layer
And (5) conformally depositing an aluminum oxide packaging layer above the structure obtained in the step (5) by using an atomic layer deposition method, wherein the deposition thickness is 2 nanometers, the collected structure is a broadband light absorber structure, and light is incident into the device from the aluminum oxide packaging layer.
(7) Detection, analysis, characterization
Detecting, analyzing and characterizing the performance of the prepared broadband light absorber structure sample;
the surface and section morphology of the broadband light absorber structure is measured by a scanning electron microscope model Hitachi SU8010, the reflection and absorption spectrum of the broadband absorber structure in the wavelength range of 300 nanometers to 2500 nanometers under the condition of integrating sphere test is measured by an Agilent Cary5000 ultraviolet-visible-near infrared spectrophotometer, and the size of the used ultrathin bi-pass anodic alumina template is 450 nanometers in hole spacing, 310 nanometers in hole diameter and 650 nanometers in hole depth.
And (4) conclusion: fig. 1 is a schematic top view of the structure of the present invention, and fig. 2 is a schematic layer structure of the present invention (which can be regarded as a sectional structure view of fig. 1). From the top view 3(a) of the SEM image of the broadband light absorber structure, the prepared nano array structure is ordered in short distance, large in area, free of defect and uniform in size, and from the cross section 3(b), the prepared structure is an inverted cone-hole-shaped composite structure. FIGS. 4(a) and (b) are 7-cycle TiO2The reflection and transmission diagram of the Ag structure under the integrating sphere test condition of 300-2500 nm shows that the sample shows a low wide-angle reflectivity and an extremely low light transmission rate, and the diagram (c) is the light absorption diagram of the structure, so that the absorption rate of the prepared structure in the whole spectral range is kept above 93%, and the prepared broadband light absorber structure can realize broadband light absorption from ultraviolet to mid-infrared regions by reasonably adjusting the material and structure parameters. FIGS. 5(a) and (b) are graphs of 7-cycle MoO3The reflection and transmission diagram of the Ag structure under the condition of the integrating sphere is 300-2500 nm, and it can be seen that the wide-angle reflectivity of the sample is lower, the wide-angle reflectivity under 300-2500 nm is below 25%, and the wide-angle reflectivity in the visible light range is below 5%, meanwhile, the transmissivity of the structure is extremely low, only about 1%, and the diagram (c) is the light absorption diagram of the structure, and the light absorption rate of the sample is also above 75%. FIGS. 6(a) and (b) are 7-cycle MoO3The reflection and transmission images of the Au structure under the condition of 300-2500 nm of the integrating sphere test show that the prepared structure also has the characteristics of low wide-angle reflectivity and low transmission rate in the near ultraviolet to near infrared band, so that a higher value can be maintainedAs can be seen from the graph (c), the light absorption of the prepared structure is stabilized at 75% or more. Fig. 7(a) and (b) are reflection and transmission graphs of the Ge-Ag structure of the 9 period under the condition of integrating sphere test at 300-2500 nm, and it can be seen that the wide-angle reflectivity of the prepared structure in the whole test band is lower than 13%, and the wide-angle reflectivity in the long-wave band is relatively stable without obvious upward movement, and meanwhile, the structure transmittance of the 9 period is extremely low, so that the structure exhibits relatively high light absorption rate, and the light absorption rate in the whole test band is stabilized at more than 85%.
Compared with the background art, the invention has obvious advancement. An ultrathin bi-pass anodic alumina template is used as a mask, and a broadband light absorber structure is prepared by a vacuum coating method. Because the anodic alumina template is a highly ordered nanopore array, the prepared inverted cone-shaped hole-shaped broadband absorber structure is also highly ordered in a large area and a short distance, and the process gets rid of the dependence on expensive processing equipment in the past. In the past, expensive ultraviolet lithography, electron beam exposure or focused ion beam etching technology is usually adopted to obtain the designed inverted cone-hole structure, but the process is expensive in equipment, extremely high in manufacturing cost, and affected in aspects of resolution, expandability and the like. In addition, the above techniques are time consuming and generally only target devices can be obtained in the region of tens of microns, which is not applicable to large areas. The process for preparing the inverted cone-shaped hole-shaped broadband light absorber structure by using the ultrathin bi-pass anodic aluminum oxide template as the mask can realize large-area application. Meanwhile, the AAO template has good ductility and flexibility, and the prepared structure can be applied to a flexible device, so that a new technical approach is provided for the development of a broadband light absorber, and the AAO template has potential application value.
Claims (6)
1. A broadband light absorber structure, characterized by: the composite material comprises an aluminum oxide packaging layer, an anodic aluminum oxide template AAO and 2-30 inverted cone-shaped dielectric/metal composite layers, wherein the thickness of the aluminum oxide packaging layer is 0.5-5 nanometers, the thickness of the anodic aluminum oxide template AAO is 100-1500 nanometers, the thickness of the dielectric in each dielectric/metal composite layer is 1-150 nanometers, and the thickness of the metal in each dielectric/metal composite layer is 1-50 nanometers.
2. The broadband light absorber structure of claim 1, wherein: in the medium/metal composite layer, the medium material is oxide or a quaternary element, and the metal material is simple substance metal.
3. The broadband light absorber structure of claim 2, wherein: the oxide is one of titanium dioxide, silicon dioxide, molybdenum trioxide, copper oxide, aluminum oxide and magnesium oxide, the four-group element is silicon or germanium, and the simple substance metal is one of gold, silver, platinum, copper, aluminum, iron, chromium, manganese, titanium, nickel, tungsten and zinc.
4. The broadband light absorber structure of claim 1, wherein:
the diameter of the inverted cone hole-shaped medium/metal composite layer is 80-1000 nanometers, the hole depth is 150-2000 nanometers, and the hole distance is 80-1000 nanometers.
5. A method of making the broadband light absorber structure of claim 1, wherein: the method comprises the following steps
Taking a glass slide of a glass material as a glass substrate, sequentially carrying out ultrasonic cleaning on the glass slide with deionized water, absolute ethyl alcohol and isopropanol in an ultrasonic cleaning machine for 20 minutes respectively, then carrying out blow-drying on the glass slide with nitrogen, and placing the glass slide in an oxygen plasma cleaning machine for cleaning for 5 minutes;
step two, transferring the ultrathin bi-pass anodic alumina film, laying the PMMA/AAO film on a glass slide by using tweezers, enabling the AAO surface to face the substrate, simultaneously clamping the glass substrate and the PMMA/AAO film by using the tweezers, vertically inserting the glass substrate and the PMMA/AAO film into acetone for soaking, and removing PMMA on the PMMA/AAO film to form an anodic alumina template AAO;
depositing a cone-hole-shaped medium/metal composite layer above the anodic aluminum oxide template AAO, and depositing a medium layer and a metal layer in a vacuum vapor deposition system by using a vacuum coating method, wherein the thickness of the medium layer is 1-150 nanometers, and the thickness of the metal layer is 1-50 nanometers;
step four, repeating the step three for 1-29 times, and forming a cone-hole-shaped medium/metal composite layer with the thickness of 100-1500 nm above the AAO template;
transferring the cone-hole-shaped medium/metal composite layer onto a flexible substrate of the adhesive tape, wherein the structure above the adhesive tape sequentially comprises the cone-hole-shaped medium/metal composite layer and an ultrathin bi-pass anodic alumina template;
and sixthly, conformally depositing an aluminum oxide packaging layer above the structure obtained in the fifth step by using an atomic layer deposition method by using a vacuum coating method, wherein the deposition thickness is 0.5-5 nanometers, thus the preparation of the broadband light absorber structure is completed, and light is incident into the device from the aluminum oxide packaging layer.
6. The method of making a broadband light absorber structure of claim 5, wherein: the vacuum coating method is one of electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition, pulsed laser deposition, microwave plasma chemical vapor deposition and ultrasonic chemical deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911372212.1A CN111129183A (en) | 2019-12-27 | 2019-12-27 | Broadband light absorber structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911372212.1A CN111129183A (en) | 2019-12-27 | 2019-12-27 | Broadband light absorber structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111129183A true CN111129183A (en) | 2020-05-08 |
Family
ID=70503661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911372212.1A Withdrawn CN111129183A (en) | 2019-12-27 | 2019-12-27 | Broadband light absorber structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111129183A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112613173A (en) * | 2020-12-18 | 2021-04-06 | 北京理工大学 | Method for calculating and simulating absorptivity of gold-black film |
| CN112844384A (en) * | 2020-12-25 | 2021-05-28 | 北京印刷学院 | Photocatalytic device based on titanium dioxide/copper composite film and preparation method and application thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762248A (en) * | 2014-01-23 | 2014-04-30 | 中国科学院半导体研究所 | Solar cell component with anti-reflective coating and preparation method thereof |
| CN104064607A (en) * | 2014-07-08 | 2014-09-24 | 天津工业大学 | Novel solar cell double-trapping-light structure with AAO nanometer gratings |
| CN104900721A (en) * | 2014-03-03 | 2015-09-09 | 天津工业大学 | Novel solar cell surface anti-reflection structure with AAO nanometer grating |
| US20160362807A1 (en) * | 2015-06-15 | 2016-12-15 | Palo Alto Research Center Incorporated | Producing Passive Radiative Cooling Panels And Modules |
| CN108265278A (en) * | 2018-01-03 | 2018-07-10 | 北京科技大学 | A kind of masterplate inscription rubbing method of regularly arranged porous nanometer structure film |
| CN207925496U (en) * | 2018-06-08 | 2018-09-28 | 汉能新材料科技有限公司 | Thin-film package device and solar cell |
| CN108735862A (en) * | 2018-07-25 | 2018-11-02 | 汉能新材料科技有限公司 | Solar power generation component, thin-film solar cells and preparation method thereof |
| CN109390425A (en) * | 2018-11-28 | 2019-02-26 | 中国华能集团有限公司 | A kind of high stability solar battery |
| CN110320579A (en) * | 2019-06-14 | 2019-10-11 | 太原理工大学 | A kind of cone cell hyperbolic Meta Materials photon structure and preparation method thereof |
-
2019
- 2019-12-27 CN CN201911372212.1A patent/CN111129183A/en not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762248A (en) * | 2014-01-23 | 2014-04-30 | 中国科学院半导体研究所 | Solar cell component with anti-reflective coating and preparation method thereof |
| CN104900721A (en) * | 2014-03-03 | 2015-09-09 | 天津工业大学 | Novel solar cell surface anti-reflection structure with AAO nanometer grating |
| CN104064607A (en) * | 2014-07-08 | 2014-09-24 | 天津工业大学 | Novel solar cell double-trapping-light structure with AAO nanometer gratings |
| US20160362807A1 (en) * | 2015-06-15 | 2016-12-15 | Palo Alto Research Center Incorporated | Producing Passive Radiative Cooling Panels And Modules |
| CN108265278A (en) * | 2018-01-03 | 2018-07-10 | 北京科技大学 | A kind of masterplate inscription rubbing method of regularly arranged porous nanometer structure film |
| CN207925496U (en) * | 2018-06-08 | 2018-09-28 | 汉能新材料科技有限公司 | Thin-film package device and solar cell |
| CN108735862A (en) * | 2018-07-25 | 2018-11-02 | 汉能新材料科技有限公司 | Solar power generation component, thin-film solar cells and preparation method thereof |
| CN109390425A (en) * | 2018-11-28 | 2019-02-26 | 中国华能集团有限公司 | A kind of high stability solar battery |
| CN110320579A (en) * | 2019-06-14 | 2019-10-11 | 太原理工大学 | A kind of cone cell hyperbolic Meta Materials photon structure and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112613173A (en) * | 2020-12-18 | 2021-04-06 | 北京理工大学 | Method for calculating and simulating absorptivity of gold-black film |
| CN112613173B (en) * | 2020-12-18 | 2022-08-26 | 北京理工大学 | Method for calculating and simulating absorptivity of gold-black film |
| CN112844384A (en) * | 2020-12-25 | 2021-05-28 | 北京印刷学院 | Photocatalytic device based on titanium dioxide/copper composite film and preparation method and application thereof |
| CN112844384B (en) * | 2020-12-25 | 2023-08-11 | 北京印刷学院 | Photocatalytic device based on titanium dioxide/copper composite film and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104656170B (en) | Broadband light full absorber and preparation method thereof | |
| Li et al. | Fabrication of antireflection surfaces with superhydrophobic property for titanium alloy by nanosecond laser irradiation | |
| CN111129183A (en) | Broadband light absorber structure and preparation method thereof | |
| US20150036234A1 (en) | Methods and compositions related to dielectric coated metal nanoparticles in thin-film opto-electronic conversion devices | |
| Haider et al. | Enhance preparation and characterization of nickel-oxide as self-cleaning surfaces | |
| Fan et al. | Patternable fabrication of hyper-hierarchical metal surface structures for ultrabroadband antireflection and self-cleaning | |
| WO2012134853A1 (en) | Surface-enhanced raman scattering apparatus and methods | |
| Ding et al. | One-step fabrication of multifunctional fusiform hierarchical micro/nanostructures on copper by femtosecond laser | |
| Welegergs et al. | Thickness dependent morphological, structural and optical properties of SS/CuO nanocoatings as selective solar absorber | |
| CN103641059A (en) | Silicon-pillared metal film nano-structure array and preparation method thereof | |
| CN105442014B (en) | A kind of composite material device | |
| Fu et al. | Low-temperature hydrothermal fabrication of Fe3O4 nanostructured solar selective absorption films | |
| CN110320579A (en) | A kind of cone cell hyperbolic Meta Materials photon structure and preparation method thereof | |
| CN106646696A (en) | Dual-band visible light broadband absorption structure and preparation method thereof | |
| Li et al. | Highly ordered monolayer/bilayer TiO 2 hollow sphere films with widely tunable visible-light reflection and absorption bands | |
| Pan et al. | Fabrication of two-dimensional periodic structures on silicon after scanning irradiation with femtosecond laser multi-beams | |
| Cheng et al. | Bio-inspired self-assembly of large area 3D Ag@ SiO2 plasmonic nanostructures with tunable broadband light harvesting | |
| Sangar et al. | Fabrication and characterization of large metallic nanodots arrays for organic thin film solar cells using anodic aluminum oxide templates | |
| Chen et al. | Weakening heat accumulation behavior caused by femtosecond pulses for high-performance antireflection micro-nano porous structures | |
| Chen et al. | Characterization of anti-reflection structures fabricated via laser micro/nano-processing | |
| Zhang et al. | Preparation of structured surfaces for full-spectrum photon management in photovoltaic-thermoelectric systems | |
| CN113200512B (en) | Small-gap metal nano cavity structure, preparation method and equipment | |
| CN101161378A (en) | Silicon dioxide monocaryon bismuth-silver double cap shaped complex nanometer particle and its preparing method | |
| Wang et al. | Multifunctional surface of titanium alloy with dual-scale hierarchical micro/nanostructures fabricated by femtosecond laser processing | |
| CN113253368B (en) | Broadband film high absorber, preparation method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20200508 |