CN108877663B - Display screen, manufacturing method thereof and display structure - Google Patents

Display screen, manufacturing method thereof and display structure Download PDF

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Publication number
CN108877663B
CN108877663B CN201710326580.7A CN201710326580A CN108877663B CN 108877663 B CN108877663 B CN 108877663B CN 201710326580 A CN201710326580 A CN 201710326580A CN 108877663 B CN108877663 B CN 108877663B
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display
light emitting
emitting diode
silicon substrate
transparent
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CN108877663A (en
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潘小和
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Xizhao Photoelectric Xiamen Co ltd
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Xizhao Photoelectric Xiamen Co ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

The invention provides a display screen, a manufacturing method thereof and a display structure, wherein the display screen comprises a transparent substrate and a plurality of display modules, wherein the surface of each display module is provided with a plurality of light emitting diode arrays and a plurality of nonvolatile memories, each light emitting diode is correspondingly connected with one nonvolatile memory, the back surface of each display module is provided with a plurality of wafer-level ball grid array packaging electrodes, each display module is provided with an image processing controller and a plurality of penetrating electrodes, an image signal is conducted to the image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the plurality of display modules, and a single display screen image consisting of the plurality of display modules is uniformly coordinated and controlled and driven through the penetrating electrodes in the middle of each display module.

Description

Display screen, manufacturing method thereof and display structure
Technical Field
The invention relates to improvement in the field of display, in particular to a display screen, a manufacturing method thereof and a display structure.
Background
With the development of technology, light emitting diodes have been widely used in various fields, including large-scale dot matrix display, illumination, and liquid crystal backlight.
The display screen of the current mobile phone is mainly a liquid crystal display screen, 60% of electricity is used on the display screen, and charging is inconvenient every day, and the most electricity-consuming part is the display screen, for example, the display screen of the side-light type mobile phone is adopted, L ED lights on the four sides of the display screen and illuminates a backlight plate, so that the display efficiency of the display screen of the mobile phone is lower than 1%.
Based on this, one solution is to adopt O L ED liquid crystal technology, it adopts ten thousand L ED on a face, every L ED is the pixel, L ED can shine eyes directly, and the display efficiency is good, but O L ED is organic, as outdoor display, it is very fast to deteriorate under the sun illumination, very easy decay, in addition, O L ED's light efficiency is lower, only 26 lumens are effective in 1W in O L ED, and L ED's display efficiency can be higher than 300 lumens efficient.
Accordingly, the prior art is deficient and needs improvement.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a novel display screen, a manufacturing method thereof and a display structure, wherein the display screen and the display structure have the effects of high brightness and high contrast of L ED display, and a large number of light-emitting diodes are integrated on a substrate, so that the display screen and the display structure have the advantages of high resolution and ultrathin, and have better supporting and protecting effects on a display module.
The technical scheme of the invention is as follows: a display screen comprises a transparent substrate and a plurality of display modules regularly arranged on the transparent substrate; the surface of the display module is provided with a plurality of light emitting diode arrays and a plurality of nonvolatile memories, and each light emitting diode is correspondingly connected with one nonvolatile memory; the back of the display module is provided with a plurality of wafer-level ball grid array packaging electrodes; the display module is provided with an image processing controller and a plurality of penetrating electrodes; the image signal is conducted to the image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the display modules, and then a single display screen image composed of the display modules is driven in a unified coordination control mode through the penetrating electrodes in the middle of each display module.
Preferably, the image processing controller is disposed in a middle portion of the display module between the front surface and the back surface.
Preferably, the image processing controller is disposed on the back surface of the display module.
Preferably, the image processing controller includes a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory, and a signal amplifier; the image memory is connected with the signal control circuit; the signal control circuit is respectively connected with the row data driving circuit and the column scanning driving circuit through the signal amplifier; the row data driving circuit and the column scanning driving circuit are respectively connected with the nonvolatile memory through a plurality of penetrating electrodes.
Preferably, the transparent substrate is a transparent solid substrate.
Preferably, the transparent solid substrate includes a transparent glass substrate, a transparent plastic substrate, a transparent sapphire substrate, and a transparent thin film substrate.
Preferably, the transparent solid substrate is provided with a transparent conductive film, the display module is provided with an electrode, and the transparent conductive film is connected with the electrode to form a touch screen.
The invention also adopts the following technical scheme: a display structure comprises a plurality of display screens, wherein the display screens are arranged regularly and are spliced seamlessly.
The invention also adopts the following technical scheme: a manufacturing method of a display screen comprises the following steps: modularizing a surface etching array of the silicon substrate; epitaxially growing a III-V semiconductor light emitting diode array on the surface of the silicon substrate; thinning the back of the silicon substrate, carrying out dry deep etching, and filling CVD chemical metal to form a penetrating electrode; an image processing controller including a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory and a signal amplifier is manufactured between the back surface or the front and back surfaces of the silicon substrate; covering the whole light emitting diode array on the surface of the silicon substrate by using a transparent ITO film to form a common electrode; manufacturing a ball grid array package on the back surface of the silicon substrate; converting part of the blue light emitting diode into a red light emitting diode and a green light emitting diode for the second time by using fluorescent powder or a quantum dot array; covered with a layer of SiOxAnd the transparent protective layer is used for forming an active matrix color light-emitting diode integrated display screen.
Preferably, the manufacturing method further comprises the steps of: and arranging the display screens regularly and splicing the display screens seamlessly to obtain the large-screen display screen.
The invention also adopts the following technical scheme: a method of manufacturing a display structure, comprising the steps of: modularizing a surface etching array of the silicon substrate; epitaxially growing a III-V semiconductor light emitting diode array on the surface of the silicon substrate; thinning the back of the silicon substrate, carrying out dry deep etching, and filling CVD chemical metal to form a penetrating electrode; an image processing controller including a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory and a signal amplifier is manufactured between the back surface or the front and back surfaces of the silicon substrate; covering the whole light emitting diode array on the surface of the silicon substrate by using a transparent ITO film to form a common electrode; manufacturing a ball grid array package on the back surface of the silicon substrate; converting part of the blue light emitting diode into a red light emitting diode and a green light emitting diode for the second time by using fluorescent powder or a quantum dot array; covered with a layer of SiOxTransparent protective layer to form active matrix color LED integrated display screen; and arranging the display screens regularly and splicing the display screens seamlessly.
By adopting the scheme, the display modules are regularly arranged on the substrate, and each display module emits light through the plurality of light emitting diode arrays, so that the integration quantity of the light emitting diodes on a small area is greatly increased, the high-resolution ultrathin touch screen has high resolution and ultrathin effects on the basis of high brightness and high contrast effect of L ED display, has better supporting effect and protection effect on the display modules, and is beneficial to protecting the display screen from being worn due to external acting force, so that the touch screen can be used as a touch display screen, can replace the existing liquid crystal screen and O L ED display screen, and has high market application value.
Drawings
FIG. 1 is a schematic front view of a silicon substrate wafer for a display panel according to one embodiment of the present invention.
Fig. 2 is a schematic view of a ball grid array package on the back side of a silicon substrate wafer with a display according to an embodiment of the invention.
FIG. 3 is a schematic front view of a silicon substrate wafer for a display panel according to another embodiment of the present invention.
FIG. 4 is a schematic view of a ball grid array package on the back side of a silicon substrate wafer for a display panel according to another embodiment of the present invention.
Fig. 5 is a schematic diagram of a front-back driving structure of a silicon substrate according to an embodiment of the invention.
Fig. 6 is an enlarged schematic view of the working principle of the display panel driving according to an embodiment of the present invention.
Fig. 7 is an enlarged schematic view of the embodiment shown in fig. 6 at a.
FIG. 8 is a schematic view of the modularity of the etched square array on the surface of the single-crystal silicon substrate according to one embodiment of the present invention.
FIG. 9 is a schematic view of a subsequent process of the embodiment shown in FIG. 8 for the epitaxial growth of a group III-V semiconductor light emitting diode array on the surface of the silicon substrate square array by MOCVD.
FIG. 10 is a diagram of a subsequent process of the embodiment shown in FIG. 9, lithography, dry etching SiNxPellicle and selectively cleaning the surface of the silicon substrate.
Fig. 11 is a schematic view of a semiconductor integrated circuit of a nonvolatile memory grown on a surface of a silicon substrate according to a subsequent process of the embodiment shown in fig. 10.
Fig. 12 is a schematic diagram of the anode electrode of the led exposed by opening the photolithography and dry etching processes in the subsequent process of the embodiment shown in fig. 11.
Fig. 13 is a schematic diagram of manufacturing row data lines and column scan lines and electrode connection lines in a subsequent process of the embodiment shown in fig. 12.
FIG. 14 is a transparent SiO layer covering the subsequent process of the embodiment shown in FIG. 13xSchematic diagram of the protection layer.
FIG. 15 is a schematic diagram of the backside of the silicon substrate chip after dry etching and CVD chemical metal filling to form the through electrode in the subsequent process of the embodiment shown in FIG. 14.
Fig. 16 is a schematic diagram of the integrated circuit control component fabricated on the back side of the silicon substrate in the subsequent process of the embodiment shown in fig. 15.
FIG. 17 is a schematic cross-sectional view of a display screen according to an embodiment of the invention.
Fig. 18 is a schematic front view of a square silicon substrate display module in various combinations according to an embodiment of the present invention.
Fig. 19 is a schematic diagram of the backside ball grid array package of the embodiment of fig. 18.
FIG. 20 is a schematic diagram of a driving circuit for splicing multiple active matrix III-V LED displays into a large screen display structure, in accordance with one embodiment of the present invention.
Fig. 21 is a schematic diagram of a back driving structure of the embodiment shown in fig. 20.
FIG. 22 is a schematic view of modulization of an etching array of a surface of a single-crystal silicon substrate according to still another embodiment of the present invention.
FIG. 23 is a schematic view of a subsequent process of the embodiment shown in FIG. 22 for epitaxial growth of a group III-V semiconductor light emitting diode array on the surface of a silicon substrate by MOCVD.
FIG. 24 is a schematic view of the embodiment shown in FIG. 23, followed by thinning the backside of the silicon substrate, dry etching back, and CVD chemical metal filling to form the through electrode.
Fig. 25 is a schematic diagram of the integrated circuit control components fabricated on the back side of the silicon substrate in the subsequent process of the embodiment shown in fig. 24.
FIG. 26 is a schematic diagram of the subsequent process of FIG. 25, after cleaning, to cover the entire L ED array with a transparent ITO film to form a common electrode.
Fig. 27 is a schematic cross-sectional view of an integrated display panel of an active matrix color led according to another embodiment of the present invention.
Detailed Description
In order to facilitate an understanding of the invention, the invention is described in more detail below with reference to the accompanying drawings and specific examples. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
L ED of the prior art is all made on sapphire or silicon substrate, all make single L ED, design into the lamp point, the encapsulation will occupy the larger volume under this situation, thus has caused the large margin, so can't integrate L ED on the small screen in large quantities, the invention and its every embodiment make L ED array directly on the silicon substrate, realize the luminescent diode array by way of semiconductor integrated circuit, there are multiple arrays or even millions of L ED. and, the invention and its every embodiment can realize the ultrathin L ED display screen, achieve the integrated effect of the above miniature L ED lattice, can also set up electronic circuit, control circuit, storage device and/or drive circuit, etc. on the silicon substrate, and make L ED by photolithography, have large visual angle, high contrast, high-resolution technological effect.
For example, a display screen includes a transparent substrate, and a plurality of display modules regularly arranged on the transparent substrate; the surface of the display module is provided with a plurality of light emitting diode arrays and a plurality of nonvolatile memories, and each light emitting diode is correspondingly connected with one nonvolatile memory; the back of the display module is provided with a plurality of wafer-level ball grid array packaging electrodes; the display module is provided with an image processing controller and a plurality of penetrating electrodes; the image signal is conducted to the image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the display modules, and then a single display screen image composed of the display modules is driven in a unified coordination control mode through the penetrating electrodes in the middle of each display module.
One example is a display screen including a transparent substrate, and a plurality of display modules regularly arranged on the transparent substrate; a plurality of light emitting diode arrays and a plurality of nonvolatile memories are arranged on a first surface (namely a surface) of the display module, and each light emitting diode is correspondingly connected with one nonvolatile memory; a second surface (namely the back surface) of the display module is provided with a plurality of wafer-level ball grid array packaging electrodes; each display module is regularly arranged on the transparent substrate; the display module is provided with an image processing controller and a plurality of penetrating electrodes; the image signal is conducted to the image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the display modules, and then the single display structure image composed of the display modules is driven by the penetrating electrodes in the middle of each display module in a unified and coordinated manner.
For another example, a plurality of wafer-level ball grid array package electrodes are disposed on a surface of the transparent substrate away from the display module; for example, a plurality of display modules are arranged on the first surface of the transparent substrate, the display modules are regularly arranged on the transparent substrate, a plurality of wafer-level ball grid array package electrodes are arranged on the second surface of the transparent substrate, and the like is performed in other embodiments; for example, the image processing controller is arranged in the middle of the display module between the surface and the back surface, that is, the image processing controller is arranged in the middle of the display module between the surface and the back surface; or, the image processing controller is disposed on the back surface of the display module, that is, the image processing controller is disposed on the back surface of the display module. The display module is also provided with a plurality of penetrating electrodes; for example, each penetrating electrode is connected with each wafer-level ball grid array packaging electrode in a one-to-one correspondence manner; the image signal is conducted to the image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the display modules, and then a single display screen image composed of the display modules is driven in a unified coordination control mode through the penetrating electrodes in the middle of each display module. Thus, the ultra-thin integrated display screen and the circuit with high resolution can be realized, and the product of the display screen and the electronic circuit packaged on one silicon substrate can be obtained by utilizing the existing semiconductor integrated circuit standard, production equipment and production process. For example, highly integrated electronic products, such as 50-60 integrated circuit modules on a watch and 100-200 integrated circuit modules on a mobile phone, can be manufactured in this way, which saves electricity and space and is easy to manufacture.
Yet another example is a display screen including a transparent substrate, and a plurality of display modules regularly arranged on the transparent substrate; the surface of the display module is provided with a plurality of light emitting diode arrays and a plurality of nonvolatile memories, and each light emitting diode is correspondingly connected with one nonvolatile memory; the back of the display module is provided with a plurality of wafer-level ball grid array packaging electrodes; an image processing controller is arranged in the middle of the display module between the surface and the back surface; the display module is also provided with a plurality of penetrating electrodes; in each display module of the display screen, the penetrating electrode is used for receiving an image signal, and the image processing controller is used for respectively controlling the plurality of wafer-level ball grid array packaging electrodes so as to enable the plurality of display modules of the display screen to jointly display an integral image. For example, the light emitting surfaces of the light emitting diodes are non-parallel to the silicon substrate, for example, the light emitting surfaces of the light emitting diode array are non-parallel to the first and/or second surface of the silicon substrate; for another example, the light emitting surface of the light emitting diode array is arranged non-parallel to the first surface and/or the second surface of the silicon substrate in the initial state. For example, the light emitting direction of the light emitting surface of the light emitting diode array is arranged in non-parallel with the first surface and/or the second surface of the silicon substrate; for another example, the light emitting direction of the light emitting surface of the light emitting diode array is arranged non-parallel to the first surface and/or the second surface of the silicon substrate in the initial state. For another example, the light emitting direction of the light emitting surface of the light emitting diode array forms an angle of 70 to 110 degrees, preferably 80 to 100 degrees, and preferably 90 degrees with the first surface and/or the second surface of the silicon substrate.
For example, a display screen, which may also be referred to as an active L ED display screen, includes a substrate, for example, a transparent substrate, for example, a silicon substrate, and a plurality of display modules regularly arranged on the substrate.
For example, a display screen includes a transparent substrate, and a plurality of display modules regularly arranged on the transparent substrate; the surface of the display module is provided with a plurality of light emitting diode arrays; the back of the display module is provided with an electrode; for example, the surface of the display module is further provided with a plurality of nonvolatile memories, and each light emitting diode is correspondingly connected with one nonvolatile memory; nonvolatile memory is also known as nonvolatile memory. For example, as shown in fig. 1, the display module is square, the surface of the square display module is regularly prepared on the first surface of a Silicon substrate Wafer (Silicon Wafer), for example, the standard size of the Silicon substrate Wafer is 150mm (6 inches), 200mm (8 inches), 300mm (12 inches) or 450mm (18 inches), etc., and as shown in fig. 2, the back surface of the square display module is regularly prepared on the second surface of the Silicon substrate Wafer, and comprises a plurality of Wafer-level ball grid array package electrodes. For another example, as shown in fig. 3 and 4, the display module is rectangular. Superior foodOptionally, the first surface of the silicon substrate is further provided with a transparent protective layer covering each display module, for example, the transparent protective layer may be SiOxAnd a transparent protective layer. The structural design of the embodiment can effectively and mechanically support the light-emitting diode chip and the display screen chip, and is favorable for protecting the display screen from external abrasion.
For example, the back side of the display module is provided with a plurality of Wafer-level Ball Grid Array Package electrodes, for example, in the display module, each light emitting diode Array is arranged corresponding to each Wafer-level Ball Grid Array Package electrode, each light emitting diode Array corresponds to one or a pair of Wafer-level Ball Grid Array Package electrodes, for example, in the display module, the corresponding Wafer-level Ball Grid Array Package electrodes are arranged and connected according to the actual signal requirements of each light emitting diode Array, wherein Wafer-level Package (Wafer L ev Package, W L P) belongs to the field of Package testing technology, and the Package is completed by directly wiring and Ball planting on the Wafer surface, so that the chip is smaller in size, Ball Grid Array (BGA) technology is a surface mount technology applied to integrated circuits, and compared with other Package modes such as Dual in-line Package (Dual in-line Package) or Quad Flat Package (Quad Flat Package), more pins can be provided, the bottom surface of the whole device can be used as a pin type, and has a better average wire length than that of a peripheral limited Package, thereby realizing high speed display efficiency of a high speed Ball Grid Array, a Ball Grid Array, and a Ball Grid Array, a high speed display device, and a display device suitable for example, a high speed display device, a high speed display device.
For example, the light emitting diode array is connected with at least one column metal connecting line and at least one row metal connecting line, and the light emitting diode array is controlled by a column scanning driver through the at least one column metal connecting line and controlled by a row data driver through the at least one row metal connecting line; that is, the led array is used to connect the column scan driver through at least one column metal wire and to connect the row data driver through at least one row metal wire. For example, the surface of the display module is provided with the column scan driver and the row data driver. For example, the surface of each display module is provided with one column scan driver and one row data driver. For another example, a plurality of light emitting diode arrays, a plurality of column scan drivers, and a plurality of row data drivers are disposed on a surface of each of the display modules, and each of the light emitting diode arrays corresponds to one of the column scan drivers and one of the row data drivers.
For example, the display module is also provided with a plurality of penetrating electrodes; for example, at least one of the transmissive electrodes is the row metal line, and at least one of the transmissive electrodes is the column metal line; the light emitting diode array is connected with the column scanning driver through at least one penetrating electrode serving as the column metal connecting line, and is connected with the row data driver through at least one penetrating electrode serving as the row metal connecting line. For example, the column scan driver and the row data driver are disposed on the back surface of the display module. For example, the back of each display module is provided with one column scan driver and one row data driver. For another example, a plurality of light emitting diode arrays are disposed on a surface of each of the display modules, a plurality of column scan drivers and a plurality of row data drivers are disposed on a back surface of each of the display modules, and each of the light emitting diode arrays corresponds to one of the column scan drivers and one of the row data drivers. For another example, each of the transmissive electrodes forms an electrical signal channel respectively connecting each of the light emitting diodes and the image processing controller; for another example, each of the transmissive electrodes is respectively connected to the row data driver and the column data driver of each of the light emitting diodes, and the image processing controller.
For example, a plurality of the light emitting diodes share one of the penetration electrodes; for another example, all of the light emitting diodes in each display module share one of the transmissive electrodes, e.g., one, two, or all of the light emitting diodes in each display module share one of the transmissive electrodes. For another example, each of the light emitting diodes in each of the display modules is connected to a different transmissive electrode. For another example, a penetrating electrode is disposed below each of the light emitting diodes. For better instant heat conduction, the penetration electrode is, for example, cylindrical or truncated-cone-shaped. Preferably, a plurality of microchannels are further arranged on the silicon substrate, and each microchannel penetrates through two sides of the silicon substrate, so that when the temperature of the light emitting diode side is higher, micro convection to a certain degree can be realized through the microchannels. For example, the microchannel is cylindrical with a radius of 1 to 5 nm; as another example, the microchannel is in the shape of a truncated cone; in order to improve the heat dissipation effect, for example, the micro-channel and the penetrating electrode are both in a circular truncated cone shape, and both have isosceles trapezoid cross sections, and in two isosceles trapezoid cross sections located on the same plane, two waists of one isosceles trapezoid cross section are respectively parallel to two waists of the other isosceles trapezoid cross section in a one-to-one correspondence manner. Preferably, each display module or each light emitting diode is provided with one micro-channel correspondingly. Therefore, the display screen and the display module thereof have excellent heat dissipation effect and can well assist the heat of the plurality of light emitting diode arrays on the surface to be dissipated through the back.
Preferably, a plurality of connectors are arranged on the first surface of the silicon substrate, each connector corresponds to each penetrating electrode one by one, and each connector is connected with one penetrating electrode; each connector is connected with a plurality of light emitting diodes, and each light emitting diode is connected with one connector. For example, the connecting body is a metal conductor, such as a metal sheet, and the connecting body is a copper piece; for example, a plurality of the light emitting diodes are respectively connected with the connecting body, and are connected with one penetrating electrode through the connecting body, so that the connection with the control structure is realized. For another example, each of the connectors is disposed in one-to-one correspondence with each of the transmissive electrodes, each of the connectors is connected to one of the transmissive electrodes, and each of the connectors is connected to one of the display modules; for example, one, two or all of the light emitting diodes in each of the display modules are connected to one of the connectors; for another example, each of the light emitting diodes in each of the display modules is connected to a different connector. Therefore, the connection of each light emitting diode of the light emitting diode integrated display device can be flexibly adjusted according to the actual required control light emitting mode.
In order to achieve better heat dissipation effect, for example, each of the through electrodes is a copper pillar electrode, and the copper pillar electrode has good conductive effect and heat dissipation effect, and is particularly suitable for large-scale high-density array arrangement of the light emitting diode of the invention. In order to reduce the weight, it is preferable that the copper pillar electrode is disposed in a hollow manner, for example, the copper pillar electrode is cylindrical, so that on one hand, the requirement of heat dissipation is met, and on the other hand, resources are saved and the weight is reduced. For another example, the copper pillar electrode is cylindrical or truncated cone-shaped, wherein a plurality of cavity structures are arranged, and the cavity structures are cylindrical; preferably, the axis of the cylinder of the cavity structure is parallel to the axis of the copper pillar electrode. Preferably, the copper pillar electrode is arranged away from the end portion of the light emitting diode in a flanging mode, namely the position of the back electrode is arranged in a flanging mode, so that the heat conduction effect of the copper pillar electrode on the light emitting diode is better, and the large-scale micro-lattice is further enabled to be feasible. Further, the copper column electrode is arranged away from the end flanging of the light emitting diode and forms a gear-like shape, for example, a hollow gear-like shape or a gear-like shape with a plurality of through holes in the middle is formed, and the gear-like shape is similar to a petal; the gear-like shape is provided with a groove part and a convex part, wherein the groove part and the convex part are arranged in a non-meshed mode, and the design is convenient for heat dissipation and electricity connection, for example, the area of the groove part is smaller than that of the convex part; for example, the protrusion has an isosceles trapezoid structure and an arch structure, the isosceles trapezoid structure is at an end of the protrusion close to the center of the gear-like shape, the arch structure is at an end of the protrusion far from the center of the gear-like shape, and a longer base line of the isosceles trapezoid structure is equal to a length of a chord of the arch structure.
For example, an image processing controller is arranged in the middle of the display module between the surface and the back surface; or the back of the display module is provided with an image processing controller; for example, the silicon substrate is provided with a plurality of penetrating electrodes in an array between two surfaces thereof, and the penetrating electrodes are respectively connected with a row data driver, a column data driver and an image processing controller on the back surface; for example, the image processing controller is connected to each of the wafer-level bga package electrodes, each of the nonvolatile memories, and each of the led arrays through each of the through electrodes. For example, each of the penetrating electrodes includes three penetrating electrodes, each of which includes a plurality of penetrating electrodes; the three-part penetrating electrodes comprise a first part penetrating electrode, a second part penetrating electrode and a third part penetrating electrode, wherein a plurality of penetrating electrodes in the first part penetrating electrode are respectively used as the column metal connecting lines, a plurality of penetrating electrodes in the second part penetrating electrode are respectively used as the row metal connecting lines, and a plurality of penetrating electrodes in the third part penetrating electrode are respectively used as control connecting lines; for another example, the image processing controller is connected to each of the wafer-level bga package electrodes, each of the nonvolatile memories, and each of the led arrays through each of the control lines. That is, the image processing controller is connected to each of the bga package electrodes, the nonvolatile memories, and the led arrays through a plurality of third partial through electrodes.
For example, image signals are conducted to an image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the display modules, and then a single display screen image composed of the display modules is driven by the through electrodes in the middle of each display module in a unified and coordinated manner.
Preferably, the display screen comprises two or more display modules. For example, the display screen includes a plurality of regularly arranged display modules. For example, the display modules are square, the front surfaces of the square display modules arranged and assembled are shown in fig. 18, the back surfaces of the square display modules are shown in fig. 19, and the square display modules have various regular arrangement modes; as another example, the display module is rectangular or other shape. For example, each of the display modules is independently driven.
Preferably, the image processing controller includes a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory, and a signal amplifier; for example, the image processing controller includes a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory, an integrated circuit controller, a signal amplifier, a memory, a digital-to-analog converter and/or an analog-to-digital converter, etc.; for example, the image processing controller is also called an integrated circuit control component; for example, the image memory is connected with the signal control circuit; for example, the signal control circuit is respectively connected with a plurality of wafer-level ball grid array package electrodes. For example, the signal control circuit is connected to the row data driving circuit and the column scanning driving circuit through the signal amplifier; the row data driving circuit and the column scanning driving circuit are respectively connected with the nonvolatile memory through a plurality of penetrating electrodes. For another example, the image processing controller further includes a processor, and the processor is respectively connected to the image memory and the signal control circuit; in another example, the processor is respectively connected with a plurality of wafer-level ball grid array package electrodes.
Preferably, in the plurality of display modules, a distance between two adjacent display modules is less than 1 mm. For example, in the plurality of display modules, the display modules are arranged closely, and the distance between two adjacent display modules is less than 0.8 mm; preferably, a distance between adjacent two of the plurality of display modules is less than 0.5 mm or less. This is advantageous for achieving higher resolution in a small area.
Preferably, the transparent substrate is a transparent solid substrate. For example, the transparent solid substrate includes a transparent glass substrate, a transparent plastic substrate, a transparent sapphire substrate, and a transparent thin film substrate. For example, the transparent solid substrate is provided with a transparent conductive film, the display module is provided with electrodes, and the transparent conductive film is connected with the electrodes to form a touch screen. For example, a transparent conductive film on a glass substrate and an electrode inside a silicon display screen form a touch screen. For example, the transparent base is a single crystal silicon substrate.
Preferably, as shown in the lower part of fig. 18 and 19, each of the display modules is laterally regularly arranged. Alternatively, as shown in the upper part of fig. 18 and 19, the display modules are arranged in a diagonal direction. Alternatively, as shown in the left or right portions of fig. 18 and 19, the display modules are arranged in a staggered manner. Thus, various display screens can be designed and realized according to different requirements.
For example, the light emitting diode array comprises a plurality of light emitting diodes, or the light emitting diode array comprises a plurality of light emitting diode chips; for example, the size and the gap of the light emitting diode are designed according to practical situations, for example, in the case of light emitting diodes which are grown in a trial mode, namely, the light emitting diodes, the side length of each square of the light emitting diodes is as follows: 10-6Rice-10-4Rice, i.e., 1 micron to 100 microns; or, the minimum side length of the rectangle of each light emitting diode is as follows: 10-6Rice-10-4The distance between two light emitting diodes is 10% -20% of the size of a single light emitting diode, the size of a light emitting diode integrated display device is × 10 mm-500 mm × 500mm, the heat dissipation can be directly conducted by a silicon substrate due to high light emitting efficiency and low normal working power, and the heat dissipation can be conducted through the penetrating electrode.
The surface etched array of squares of a single crystal silicon substrate is modular as shown in FIG. 8, for example, by photolithographic SiNxA protective mask 200 to form a square array, and then dry etching the single crystal silicon substrate 100 to form SiNxa/Si square array; the SiN is then selectively removedxAnd protecting the surface film to form a silicon substrate square array.
Then, the array of square blocks is arranged on the silicon substrateEpitaxially growing a group III-V semiconductor light emitting diode array 300 on a surface using MOCVD, as shown in fig. 9; then, photolithography and dry etching are carried out to obtain SiNxPellicle, selectively cleaning the silicon substrate surface 400, as shown in FIG. 10; then, a nonvolatile memory semiconductor integrated circuit is grown on the surface of the silicon substrate to generate a nonvolatile memory 500, as shown in fig. 11 in detail; then, photoetching is carried out, and the anode electrode of the light-emitting diode is opened and exposed by dry etching, as shown in fig. 12 specifically; then, making a row data line 110, a column scanning line 120 and electrode connecting lines, as shown in fig. 13; then covering a layer of transparent SiOxA protective layer 600, as particularly shown in FIG. 14; then, dry etching is carried out, and a CVD chemical metal is filled to form a penetrating electrode 130 to the back of the silicon substrate chip, as shown in FIG. 15 specifically; then, an integrated circuit control component 700 (i.e., an image processing controller) is fabricated on the back side of the silicon substrate, as shown in fig. 16; for example, the control components of the integrated circuit are manufactured on the back surface of the silicon substrate and comprise a controller, a row data driving circuit, a column scanning driving circuit, a signal amplifier, a memory, an A/D converter, a D/A converter and the like; for example, the integrated circuit control component 700 includes a processor, such as a CPU or MCU chip, for implementing functions of data acquisition, reception, analysis, processing, and/or image analysis processing; and then manufacturing a ball grid array package on the integrated circuit surface on the back surface of the display screen, and secondarily converting the blue light into red light and green light by using fluorescent powder or a quantum dot array. For example, the non-volatile memory of the display module therein forms a touch-capacitive, position-sensitive touch screen.
Preferably, each of the display modules, or each of the light emitting diode arrays, or each of the light emitting diodes, includes a plurality of secondary light emitting materials emitting different colors by changing the primary colors of the light emitting diodes, and the light emitting diode arrays are taken as an example below, and it is understood that the same applies to the display modules or the light emitting diodes; for example, each of the led arrays includes several different color phosphors or quantum dot materials of different particle sizes that emit different colors by changing the primary colors of the leds. Preferably, each light emitting diode array comprises a plurality of light emitting diodes of different colors, for example, each light emitting diode array comprises a plurality of light emitting diodes emitting different colors by different color phosphors or different quantum dot materials. For example, each led array is used as a pixel point, and the light emitting color and the light emitting time are controlled by the control structure on the back side. Thus, the rich dot matrix display effect with small area can be realized. For example, each LED array includes a plurality of LEDs emitting different colors by different color phosphors. For another example, each led array includes a plurality of leds emitting at least two colors by respective phosphors. For another example, each led array includes a plurality of leds emitting at least three colors by respective phosphors.
Preferably, each led array comprises colored pixels of at least three basic colors; wherein the basic colors include a primary color of red, a primary color of blue, and a primary color of green. For example, the led array includes red phosphor and green phosphor. Thus, a three-color led array can be formed. Preferably, the basic color further includes a yellow primary color or a white primary color. For example, the basic color further includes a yellow-based phosphor or a white-based phosphor. For example, the basic color further includes a yellow primary color excited by a yellow primary phosphor or a white primary color excited by a white primary phosphor. For example, the light emitting diode array includes yellow or white phosphor. In this way, a four-color led array can be made. For example, the blue light is directly transmitted out or transmitted out through a transparent electrode by adopting a fluorescent powder process, green fluorescent powder is added to the blue light to form green light, and red fluorescent powder is added to the blue light to form red light; for another example, a yellow phosphor is added to the blue light to form white light, and so on.
Preferably, each of said light emitting diode arrays comprises at least one group III-V compound light emitting diode emitting a primary color of blue light. For example, the pixel of the blue primary color is a silicon-based LED of III-V compound blue light. And/or the pixel point of the red primary color is a light-emitting diode of III-V group compound blue light of a silicon substrate, and the red light is generated by secondary light emission of nitrogen-based red fluorescent powder on the surface. And/or the pixel point of the green primary color is a light-emitting diode of III-V group compound blue light of the silicon substrate, and green light is generated by secondary light emission of green silicate fluorescent powder on the surface.
For example, a cross-section of a display panel having a single crystal silicon substrate 100, a nonvolatile memory 500, a transparent SiO is obtained as shown in FIG. 17xThe protective layer 600, the integrated circuit control component 700, the ball grid array packaged electrode connection balls 800 and the blue/green/red three-color light emitting diode arrays 900 on the back of the display screen, the row data lines 110 and the column scanning lines 120 are respectively connected with the blue/green/red three-color light emitting diode arrays 900, the components on the two sides of the monocrystalline silicon substrate 100 are in conductive connection through the penetrating electrodes 130, and the penetrating electrodes have a certain heat dissipation effect.
For example, the front and back driving structure of the silicon substrate is shown in fig. 5, the front surface of the substrate is provided with an active matrix light emitting diode display screen, a row data driving circuit and a column scanning driving circuit, for example, the row data driving circuit includes a row data driver and a connecting circuit thereof, and the column scanning driving circuit includes a column scanning driver and a connecting circuit thereof; for example, the connection circuit of the column data driver is a column metal connection line, which is also called a column data line, the connection circuit of the column scan driver is a column metal connection line, which is also called a column scan line; the back surface of the substrate is provided with a control circuit and a storage, the storage is connected with the control circuit, the control circuit is respectively connected with a row data driving circuit and a column scanning driving circuit, and the row data driving circuit and the column scanning driving circuit are respectively connected with an active matrix light-emitting diode display screen. For example, the control circuit and the storage are integrated, and for another example, the control circuit and the storage are integrated in the image processing controller, that is, the image processing controller includes the control circuit and the storage; for example, the memory is a ROM memory or a RAM memory, and the control circuit includes a data acquisition circuit, a receiving circuit, an analysis circuit, a processing circuit, an amplifier, a digital-to-analog converter, an analog-to-digital converter, an image analysis processor, and/or the like. For another example, the active matrix led display screen in the above embodiments is a display module.
For example, as shown in fig. 6, the display panel driving operation principle is that a scan driver and two data drivers are respectively connected to an active matrix led display panel, wherein one data driver is connected to the active matrix led display panel by odd lines, and the other data driver is connected to the active matrix led display panel by even lines, the scan driver includes a level shifter, a buffer driver and a shift register, for example, the level shifter and the buffer driver are sequentially connected to the shift register, the shift register is connected to the active matrix led display panel, and for example, the data driver includes a shift register, a latch 1, a latch 2 and a Digital-to-analog converter (DAC), for example, the shift register, the latch 1, the latch 2 are sequentially connected to the DAC, the DAC is connected to the active matrix led display panel, the led of the active matrix led display panel and its control circuit are shown in fig. 7, and two Thin film transistors (TFT, Thin film transistor) are provided, including a switch TFT connected to a driving TFT L ED chip, and a control L ED chip.
For example, the driving circuit for splicing a plurality of active matrix III-V group led displays into a large screen is shown in fig. 20, the substrates are spliced with each other, the back side of each substrate is respectively provided with a signal processing and image controller 910, the signal processing and image controller 10 comprises a control circuit and a memory which are connected with each other, or a total signal processing and image controller can be uniformly arranged, the front sides of the substrates are spliced with each other, so that a plurality of active matrix L ED displays are spliced into a large screen 920, the back driving structure for splicing a plurality of active matrix III-V group led displays into a large screen is shown in fig. 21, the control circuit is respectively connected with the display screen back electrode connecting balls 210 through the display screen back electrode driving circuit 220, thereby realizing the control of each led array of each display module.
As another example, a display panel and/or a method of manufacturing a display panel includes the following: modularizing the silicon substrate surface etching array, for example modularizing the single crystal silicon substrate surface etching array, as shown in fig. 22, for example, etching the silicon substrate array 101 on the upper surface of the silicon substrate 100; epitaxial growth of a group III-V semiconductor light emitting diode array 300 on the surface of a silicon substrate 100 by MOCVD is shown in FIG. 23The method comprises the steps of thinning the back surface of a silicon substrate, etching the back surface of the silicon substrate in a dry and deep manner, forming a penetrating electrode 130 by CVD chemical metal filling as shown in figure 24, forming a row data line 110, a column scanning line 120 and an integrated circuit control component 700 as shown in figure 25, wherein the integrated circuit control component comprises a row data driving circuit, a column scanning driving circuit, an integrated circuit controller, a signal amplifier, a memory, an A/D converter and/or a D/A converter and the like, covering the whole L ED array with a transparent ITO film 103 after cleaning to form a common electrode as shown in figure 26, then forming a ball grid array package on the integrated circuit surface on the back surface of the display screen, namely forming hemispherical metal electrodes on the integrated circuit surface on the back surface of the display screen as image driving signal connections, secondarily converting blue light into red light and green light by using fluorescent powder or quantum dot arrays, for example, secondarily converting blue light into red light, green light and white light by using fluorescent powder or quantum dot arraysxA transparent protective layer, and a cross-sectional view of the active matrix color LED integrated display screen shown in FIG. 27, which comprises a transmissive electrode 130 in a silicon substrate 100, a blue/green/red LED array 900 on the surface of the silicon substrate 100, a transparent ITO film 103 covering the entire L ED array, and a transparent SiO film on the transparent ITO film 103xA protective layer 600, an integrated circuit control component 700 on the back surface of the silicon substrate 100, electrode connection balls 800 of a ball grid array package, and the like.
For another example, the present invention further provides a display structure, for example, the display structure is a large-screen display screen, for example, the display structure includes a plurality of display structures as described in any of the above embodiments, and each of the display structures is regularly arranged and seamlessly spliced; for example, the display structures are regularly arranged and seamlessly spliced to form the display structure.
For another example, a method for manufacturing a display panel is used for manufacturing the display panel according to any one of the above embodiments; for example, a method of manufacturing a display panel includes the steps of: modularizing a surface etching array of the silicon substrate; epitaxially growing a III-V semiconductor light emitting diode array on the surface of the silicon substrate; thinning the back of the silicon substrate, carrying out dry deep etching, and filling CVD chemical metal to form a penetrating electrode; on the back or front and back of the silicon substrateAn image processing controller including a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory, and a signal amplifier is formed; wherein, the surface and the back of the silicon substrate are between the surface and the back of the silicon substrate; covering the whole light emitting diode array on the surface of the silicon substrate by using a transparent ITO film to form a common electrode; manufacturing a ball grid array package on the back surface of the silicon substrate; converting part of the blue light emitting diode into a red light emitting diode and a green light emitting diode for the second time by using fluorescent powder or a quantum dot array; covered with a layer of SiOxAnd the transparent protective layer is used for forming an active matrix color light-emitting diode integrated display screen. For another example, after the active matrix color led integrated display is formed, the method further includes the steps of: and arranging the display screens regularly and splicing the display screens seamlessly to obtain the large-screen display screen. As another example, a method for manufacturing a display structure is provided, which is used to manufacture the display structure according to any of the above embodiments.
The invention and various embodiments thereof utilize standard semiconductor integrated circuit production processes to produce display screens in a large scale, namely active semiconductor light emitting diode array display screens, also called active light emitting diode array display screens, active matrix light emitting diode display screens or active L ED display screens and the like, can save electricity by a plurality of times compared with AMO L ED display screens, can increase resolution by a plurality of times compared with AMO L ED display screens, and can increase reaction speed by 10 times compared with AMO L ED display screens, can reduce cost by more than 50% compared with AMO L ED display screens in a large scale production, and can reduce the size of a visual scale by less than 30% or less.
Further, in view of the standard size limitation of the silicon substrate currently used for the production of semiconductor integrated circuit devices, for example, the standard size is 150mm, 200mm, 300mm or 450mm, etc., the yield of the active semiconductor light emitting diode array display panel of the silicon substrate is high in the small-sized standard, and the production cost is more advantageous.
Moreover, for the application of the large-screen display screen, a connecting mode can be adopted, and a plurality of small-size active semiconductor light-emitting diode array display screens are spliced into the large-screen display screen, so that the production cost of the large-screen display screen is greatly reduced.
Further, the embodiment of the present invention further includes a display screen formed by combining the technical features of the above embodiments.
The technical features mentioned above are combined with each other to form various embodiments which are not listed above, and all of them are regarded as the scope of the present invention described in the specification; also, modifications and variations may be suggested to those skilled in the art in light of the above teachings, and it is intended to cover all such modifications and variations as fall within the true spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A display screen is characterized by comprising a transparent substrate and a plurality of display modules regularly arranged on the transparent substrate;
the surface of the display module is provided with a plurality of light emitting diode arrays and a plurality of nonvolatile memories, and each light emitting diode is correspondingly connected with one nonvolatile memory;
the back of the display module is provided with a plurality of wafer-level ball grid array packaging electrodes;
the display module is provided with an image processing controller and a plurality of penetrating electrodes; the penetrating electrode is a copper column electrode, and the copper column electrode is arranged in a hollow mode;
the image signal is conducted to the image processing controller in the middle of each display module through the wafer-level ball grid array electrodes of the display modules, and then a single display screen image composed of the display modules is driven in a unified coordination control mode through the penetrating electrodes in the middle of each display module.
2. The display screen of claim 1, wherein the image processing controller is disposed in a middle portion of the display module between the front surface and the back surface.
3. The display screen of claim 1, wherein the back side of the display module is provided with the image processing controller.
4. The display screen of claim 1, wherein the image processing controller comprises a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory, and a signal amplifier;
the image memory is connected with the signal control circuit;
the signal control circuit is respectively connected with the row data driving circuit and the column scanning driving circuit through the signal amplifier;
the row data driving circuit and the column scanning driving circuit are respectively connected with the nonvolatile memory through a plurality of penetrating electrodes;
or the copper column electrode is arranged away from the end flanging of the light-emitting diode;
or, the transparent base is a silicon substrate, and a plurality of micro-channels are further arranged on the silicon substrate, and each micro-channel respectively penetrates through two sides of the silicon substrate; wherein the microchannel is cylindrical and has a radius of 1 to 5 nm;
or, the transparent substrate is a silicon substrate, the silicon substrate is further provided with a plurality of microchannels, the microchannels and the penetrating electrodes are both in a circular truncated cone shape and both have isosceles trapezoid cross sections, and in the two isosceles trapezoid cross sections located on the same plane, two waists of one isosceles trapezoid cross section are respectively parallel to two waists of the other isosceles trapezoid cross section in a one-to-one correspondence manner.
5. The display screen of claim 1, wherein the transparent substrate is a transparent solid substrate.
6. The display screen of claim 5, wherein the transparent solid substrate comprises a transparent glass substrate, a transparent plastic substrate, a transparent sapphire substrate, and a transparent film substrate.
7. The display screen of claim 5, wherein the transparent solid substrate is provided with a transparent conductive film, the display module is provided with electrodes, and the transparent conductive film is connected with the electrodes to form a touch screen.
8. A display structure comprising a plurality of display panels as claimed in any one of claims 1 to 7, wherein each of said display panels is arranged in a regular array and seamlessly joined.
9. A manufacturing method of a display screen is characterized by comprising the following steps:
modularizing a surface etching array of the silicon substrate;
epitaxially growing a III-V semiconductor light emitting diode array on the surface of the silicon substrate;
thinning the back of the silicon substrate, carrying out dry deep etching, and filling CVD chemical metal to form a penetrating electrode; the penetrating electrode is a copper column electrode, and the copper column electrode is arranged in a hollow mode;
an image processing controller including a row data driving circuit, a column scanning driving circuit, a signal control circuit, an image memory and a signal amplifier is manufactured between the back surface or the front and back surfaces of the silicon substrate;
covering the whole light emitting diode array on the surface of the silicon substrate by using a transparent ITO film to form a common electrode;
manufacturing a ball grid array package on the back surface of the silicon substrate;
converting part of the blue light emitting diode into a red light emitting diode and a green light emitting diode for the second time by using fluorescent powder or a quantum dot array;
coveringA layer of SiOxAnd the transparent protective layer is used for forming an active matrix color light-emitting diode integrated display screen.
10. The method of manufacturing according to claim 9, further comprising the steps of: and arranging the display screens regularly and splicing the display screens seamlessly.
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