CN108874020A - A kind of current-mode array SPAD flatness adaptation control circuit - Google Patents
A kind of current-mode array SPAD flatness adaptation control circuit Download PDFInfo
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- CN108874020A CN108874020A CN201810982661.7A CN201810982661A CN108874020A CN 108874020 A CN108874020 A CN 108874020A CN 201810982661 A CN201810982661 A CN 201810982661A CN 108874020 A CN108874020 A CN 108874020A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
Abstract
The invention discloses a kind of current-mode array SPAD flatness adaptation control circuits, including：Common current biasing module, several single pixel circuits corresponding with the SPAD pixel unit quantity in array SPAD, wherein each single pixel circuit includes current monitoring module and active quenching module；The current monitoring module is made of operational amplifier and current mirror, and active quenching module is made of comparator and quenching tube, and for triggering work according to the output voltage signal of current monitoring module, control quenching tube generates avalanche quenching signal；The current monitoring module is by operational amplifier OPi, by PMOS tube M4_iWith PMOS tube M5_iThe common-source common-gate current mirror of composition, by NMOS tube Mi_LWith NMOS tube Mi_RThe current mirror of composition forms.The present invention inhibits the gain non-uniformities problem of array SPAD using the reversed bias voltage of the control method self adaptive control SPAD of current-mode, while overcoming the disadvantage of conventional voltage mould mode circuit complexity, reduces area and power consumption.
Description
Technical field
The present invention relates to a kind of current-mode array SPAD flatness adaptation control circuits, belong to single photon detection
Technical field.
Background technique
Avalanche photodide (APD) has that weight is small, low in energy consumption, quantum efficiency is high, insensitive, just to magnetic field and radiation
In integrated the advantages that, the high-performance APD to work under Geiger mode angular position digitizer has single photon detection ability, referred to as single-photon avalanche light
Electric diode (SPAD).Therefore the single-photon detection system based on APD becomes important research direction, can be used for laser radar three-dimensional
The related fieldss such as imaging, environment detection, national defense safety, medical treatment detection.
Currently, single-photon detector develops to the direction of integrated, micromation, array, especially with array
The scale of formula detection application constantly extends, and to the uniformity of detector, more stringent requirements are proposed.For array SPAD, due to work
The influence of skill discreteness, it is difficult to ensure that the uniformity consistency of detector performance parameters, so that under identical reverse bias voltage condition,
Because of the difference of SPAD breakdown reverse voltage, the distribution of each SPAD overdrive voltage is simultaneously uneven, cause SPAD avalanche current from
Variation is dissipated, i.e. array SPAD gain under the conditions of identical reversed bias voltage has differences.SPAD pixel unit lower for gain,
Its avalanche current induction voltage pulse be difficult to effectively distinguish and can not detect with noise voltage, to array SPAD surveying tape come compared with
Big error.Therefore need to solve the problems, such as array SPAD gain nonuniformity in array application.
Traditional solution is to directly control the reversed bias voltage of SPAD using voltage-mode mode, to realize detector
Overbias it is consistent, ensure that gain is consistent with this.However in array application, these methods need for the spy of each pixel unit
It surveys device and adjustable reversed bias voltage is provided, also need the breakdown voltage size for understanding each detector in advance.This kind of control method can increase
The complexity of the workload of big early-stage preparations, the number for increasing control terminal and circuit structure, with array scale extension and
The diminution of pixel cell area, this gain control method are difficult to realize.
Summary of the invention
Technical problem to be solved by the present invention lies in order to overcome SPAD detectivity caused by the discreteness of technique
Nonlinear problem, the heterogeneity bring for weakening detector performance parameters influences, while avoiding conventional voltage mode reverse-biased
The problem of circuit complexity caused by voltage controls provides a kind of current-mode array SPAD flatness self adaptive control electricity
Road introduces current-mode reversed bias voltage control thought, realizes the self adaptive control of array SPAD gain.
The present invention specifically uses following technical scheme to solve above-mentioned technical problem：
A kind of current-mode array SPAD flatness adaptation control circuit, including：
Common current biasing module, is made of constant-current source and current mirroring circuit, for being array by current mirroring circuit
Each SPAD pixel unit of SPAD provides identical constant current source current；
Several single pixel circuits corresponding with the SPAD pixel unit quantity in array SPAD, wherein each single pixel circuit
It include current monitoring module and active quenching module；The current monitoring module is made of operational amplifier and current mirror, is used
The SPAD pixel unit working condition in detection array SPAD, and different voltage signals is generated to the SPAD picture in array SPAD
Plain unit carries out gain-adaptive control, while using output voltage signal as the input signal of active quenching module；The master
Dynamic quenching module, is made of comparator and quenching tube, for triggering work, control according to the output voltage signal of current monitoring module
Quenching tube processed generates avalanche quenching signal；
Wherein, the current monitoring module is made of operational amplifier and current mirror, specially：By operational amplifier OPi、
By PMOS tube M4_iWith PMOS tube M5_iThe common-source common-gate current mirror of composition, by NMOS tube Mi_LWith NMOS tube Mi_RThe current mirror of composition
Composition, the PMOS tube M4_iGrid, PMOS tube M5_iGrid be shorted to common current biasing module and PMOS tube respectively
M4_iSource electrode connect power supply VDDAnd PMOS tube M4_iDrain electrode connect PMOS tube M5_iSource electrode；The NMOS tube Mi_LAnd NMOS tube
Mi_RGrid be shorted and NMOS tube Mi_LDrain electrode connect PMOS tube M5_iDrain electrode, NMOS tube Mi_RDrain electrode connection SPAD
Anode and NMOS tube Mi_LWith NMOS tube Mi_RSource electrode ground connection；The operational amplifier OPiNon-inverting input terminal and anti-phase input
End is separately connected NMOS tube Mi_LDrain electrode and SPAD anode, and operational amplifier OPiOutput end be connected to NMOS tube simultaneously
Mi_LAnd Mi_RGrid；And using the anode of SPAD as the output end of current monitoring module.
Further, as a preferred technical solution of the present invention：The common current biasing module by constant-current source and
Current mirroring circuit is constituted, specially：By constant-current source IDC, NMOS tube M1, NMOS tube M2, NMOS tube M6, PMOS tube M3, PMOS tube M4
With PMOS tube M5It constitutes, wherein constant-current source IDCConnect NMOS tube M1Drain electrode, NMOS tube M1Grid leak is extremely short to be connect while meeting NMOS tube M2
Grid；The NMOS tube M2Drain electrode connect PMOS tube M3Drain electrode and PMOS tube M3Grid leak be shorted and meanwhile connect PMOS tube
M5Grid；The PMOS tube M5Source electrode connect PMOS tube M4Drain electrode, and PMOS tube M4Grid connect PMOS tube M5Leakage
Pole；The NMOS tube M6Drain electrode connect PMOS tube M5Drain electrode；The NMOS tube M1、M2、M6Source grounding and PMOS tube
M3, PMOS tube M4Source electrode be all connected with power supply VDD。
Further, as a preferred technical solution of the present invention：The active quenching module is by comparator and PMOS
Quenching tube Mq_iIt constitutes, specially：Comparator cmpiInput terminal connection current monitoring module and comparator cmpiOutput termination
PMOS quenching tube Mq_iGrid, and PMOS quenching tube Mq_iSource electrode meet power supply VDDAnd its drain electrode is connected to the anode of SPAD.
Further, as a preferred technical solution of the present invention：The difference that the operational amplifier and comparator are shared
Divide input structure, specially：By PMOS tube M7_i, PMOS tube M8_i, PMOS tube M9_i, PMOS tube M16_i, PMOS tube M17_i, NMOS tube
M10_i, NMOS tube M11_i, NMOS tube M12_i, NMOS tube M13_i, NMOS tube M14_i, NMOS tube M15_iConstitute operational amplifier OPi, and
By PMOS tube M7_i, PMOS tube M8_i, PMOS tube M9_i, PMOS tube M16_i, PMOS tube Mp_i, NMOS tube M10_i, NMOS tube M11_i、
NMOS tube M12_i, NMOS tube M13_i, NMOS tube M14_i, NMOS tube Mn_iWith phase inverter INViConstitute comparator cmpi。
Further, as a preferred technical solution of the present invention：It further include the work shape for controlling entire circuit
The enabled PMOS tube M of stateen_i, wherein PMOS tube Men_iSource electrode connect power supply VDDAnd its grid connection makes to can control signal EN
And drain electrode connects the anode of SPAD.
The present invention by adopting the above technical scheme, can have the following technical effects：
The present invention is biased using current-mode, can the reverse-biased electricity of self adaptive control SPAD by OP control type current monitoring module
Pressure can effectively realize array type compared to the work that the mode of conventional voltage control greatly simplifies antenna array control
SPAD gain consistency detection.The present invention compared with traditional circuit, there are the advantages of have：
(1) present invention employs a kind of current-mode array SPAD flatness adaptation control circuits, by public
Current offset module uniformly provides electric current, and the size of current by detecting SPAD using current mirror for the SPAD in array to sentence
The working condition of disconnected SPAD, and adaptive feedback control is carried out to the reversed bias voltage of SPAD, the increasing to array SPAD is realized with this
Beneficial consistency detection and control simplify the design of circuit while inhibiting nonlinearity erron, reduce power consumption and area
Expense.
(2) present invention uses OP control type current monitoring module, and different electricity is generated according to the difference of SPAD working condition
Signal is pressed, the self adaptive control to SPAD gain is completed.Operational amplifier in detection module can solve channel length modulation effect
The matching bring for coping with current mirror influences, while can significantly extend the adjustable lower range of SPAD anode potential.
(3) present invention does not need additional reference voltage when detecting snowslide, and the non-inverting input terminal and reverse phase of comparator are defeated
Enter same phase and inverting input terminal that end is separately connected operational amplifier in OP control type current monitoring module, while comparator and fortune
It calculates amplifier and shares differential input structure, circuit area consumption is reduced with this.Operation in OP control type current monitoring module is put
Comparator in big device and active quenching module shares differential input structure, and operational amplifier can increase non-linear to improve increasing
Benefit, bandwidth and Slew Rate, while being conducive to improve the speed of comparator.
Detailed description of the invention
Fig. 1 is the V-I performance diagram of avalanche photodide in the prior art.
Fig. 2 is SPAD voltage-mode bias principles figure in the prior art.
Fig. 3 is SPAD current-mode bias principles figure of the invention.
Fig. 4 is current-mode array SPAD flatness adaptation control circuit structure chart proposed by the present invention.
Fig. 5 is OP control type current monitoring module principle figure in the present invention.
Fig. 6 is operational amplifier and comparator shared structure circuit diagram in the present invention.
Specific embodiment
Embodiments of the present invention are described with reference to the accompanying drawings of the specification.
The V-I characteristic curve of avalanche photodide is as shown in Figure 1, its voltage and electric current are non-linear relation, diode
Working region can be divided into cut-off region, linear zone, low gain Geiger region and high-gain avalanche region, by the electric current of diode come
Reflect its gain characteristic, the gain calibration circuit based on current-mode is real by the curent change of detection SPAD detector in the present invention
The self adaptive control of existing gain.
The V-I characteristic curve of avalanche photodide is very precipitous under Geiger mode angular position digitizer, as shown in Fig. 2, anti-in such a mode
Minor change occurs for bias-voltage, and pull-down current will generate acute variation therewith.Since the discreteness of technique influences, if simply
Enable SPAD array work under identical reverse biased, the overbias of practical each SPAD is not consistent, and then enables each
The electric current of SPAD and gain are different, lead to the gain non-uniformities problem of array SPAD, the voltage pulse of avalanche current induction
It is difficult to effectively distinguish and can not detect with noise voltage, carrys out biggish nonlinearity erron to array SPAD surveying tape.
The conventional method of such issues that solution is the setting reversed bias voltage control circuit in voltage mode biasing circuit, is passed through
SPAD reverse biased is controlled to guarantee that each pixel unit overbias is consistent, and then ensures the flatness of array SPAD.?
In array application, with the extension of array scale and the diminution of pixel cell area, this control method gradually becomes infeasible.
In order to avoid the disadvantage that reversed bias voltage control circuit in voltage mode is excessively complicated, the present invention proposes a kind of current-mode
Formula array SPAD flatness adaptation control circuit.The think of controlled different from individual element reversed bias voltage in conventional method
Think, the present invention uses a kind of control thinking based on current-mode, generates each pixel SPAD in array equally by circuit control
Quiescent current, to keep the overbias of SPAD consistent, to reach the consistent purpose of gain.SPAD in application process electric current with
The variation of dynamic bias condition and generate large change, and electric current and gain are closely related, under current offset mode, directly control
Steady-state current processed, reversed bias voltage can adaptively cooperate the demand of steady-state current, i.e., if stable state exists, reversed bias voltage is fixed
, but each pixel is respectively different.As shown in figure 3, V-I characteristic is bent when SPAD is offset under Geiger mode angular position digitizer in the present invention
Line is very precipitous, if the pull-down current of each SPAD pixel unit is identical in this seasonal array, can ensure that each SPAD pixel
The overbias of unit is approximate consistent with gain.Therefore, it is using the great advantage of current offset：The mesh that each pixel is finally adjusted
Mark bias current is consistent, and current offset can easily be transmitted by current mirror.
As shown in figure 4, the present invention proposes a kind of current-mode array SPAD flatness adaptation control circuit, mainly
Including common current biasing module, several single pixel circuits corresponding with the SPAD pixel unit quantity in array SPAD, i.e., singly
The quantity i=1 of pixel circuit, 2,3 ..., occurrence is determined by the quantity of corresponding SPAD pixel unit, wherein each single pixel
Circuit includes current monitoring module and active quenching module and enabled pipe Men_i.The common current biasing module is by perseverance
Stream source and current mirroring circuit are constituted, identical for being provided by current mirroring circuit for each SPAD pixel unit of array SPAD
Constant current source current；In several single pixel circuits, each single pixel circuit includes current monitoring module and mould is actively quenched
Block, the current monitoring module are made of operational amplifier and current mirror, for detecting SPAD pixel unit in array SPAD
Working condition, and generate different voltage signals and gain-adaptive control is carried out to the SPAD pixel unit in array SPAD, together
When using output voltage signal as the input signal of active quenching module；The active quenching module, by comparator and quenching tube
It constitutes, for triggering work according to the output voltage signal of current monitoring module, control quenching tube generates avalanche quenching signal.
It specifically, is array as shown in figure 4, the common current biasing module is made of constant-current source and current mirroring circuit
Each pixel unit of SPAD provides identical electric current, mainly by constant-current source IDC, NMOS tube M1, NMOS tube M2, NMOS tube M6、
PMOS tube M3, PMOS tube M4With PMOS tube M5It constitutes, wherein constant-current source IDCConnect NMOS tube M1Drain electrode, NMOS tube M1Grid leak pole
It is shorted while meeting NMOS tube M2Grid；The NMOS tube M2Drain electrode connect PMOS tube M3Drain electrode and PMOS tube M3Grid leak
It is shorted while connecting PMOS tube M5Grid；The PMOS tube M5Source electrode connect PMOS tube M4Drain electrode, and PMOS tube M4Grid
Pole connects PMOS tube M5Drain electrode；The NMOS tube M6Drain electrode connect PMOS tube M5Drain electrode；The NMOS tube M1、M2、M6's
Source grounding and PMOS tube M3, PMOS tube M4Source electrode be all connected with power supply VDD.Wherein, NMOS tube M1、M2、M6Constitute Multi-path electricity
Flow mirror, PMOS tube M3、M4、M5Wide swing amplitude cascode current mirror transmission circuit is constituted, by constant-current source IDCElectric current be transferred to it is each
Pixel unit uses PMOS tube M4And M5Channel-length modulation can be reduced to electricity by constituting wide swing amplitude cascode current mirror
The influence that mirror matching properties generate is flowed, the adjustable range of SPAD anode can be increased with the time width amplitude of oscillation.It is biased using common current
The target bias electric current that module can guarantee that each pixel unit is finally adjusted is consistent, while greatly simplifying big battle array
Column.
Each current monitoring module is made of operational amplifier and current mirror, mainly by operational amplifier OPi, by
PMOS tube M4_iWith PMOS tube M5_iThe common-source common-gate current mirror of composition, by NMOS tube Mi_LWith NMOS tube Mi_RThe electric current microscope group of composition
At wherein i=1,2,3 ..., occurrence is determined by the number of corresponding pixel unit.The PMOS tube M4_iGrid with it is public
PMOS tube M in current offset module4Grid be shorted, and PMOS tube M5_iGrid be shorted in common current biasing module
PMOS tube M5Grid and PMOS tube M4_iSource electrode connect power supply VDDAnd PMOS tube M4_iDrain electrode connect PMOS tube M5_iSource
Pole；The NMOS tube Mi_LWith NMOS tube Mi_RGrid be shorted and NMOS tube Mi_LDrain electrode connect PMOS tube M5_iDrain electrode,
NMOS tube Mi_RDrain electrode connection SPAD anode and NMOS tube Mi_LWith NMOS tube Mi_RSource electrode ground connection；The operational amplifier
OPiNon-inverting input terminal and inverting input terminal be separately connected NMOS tube Mi_LDrain electrode and SPAD anode, and operational amplifier OPi
Output end be connected to NMOS tube M simultaneouslyi_LAnd Mi_RGrid；And using the anode of SPAD as the output of current monitoring module
End.
The active quenching module is by comparator and PMOS quenching tube Mq_iIt constitutes, specially：Comparator cmpiInput terminal
Connect current monitoring module, comparator cmpiNon-inverting input terminal and inverting input terminal and operational amplifier OPiNon-inverting input terminal
It is completely the same with anti-phase input ending, therefore the two can share differential input structure；And comparator cmpiOutput termination
PMOS quenching tube Mq_iGrid, and PMOS quenching tube Mq_iSource electrode meet power supply VDDAnd its drain electrode is connected to the anode of SPAD.
The enabled PMOS tube Men_i, for controlling the working condition of entire circuit, wherein PMOS tube Men_iSource electrode connection
Power supply VDDAnd its grid connection makes the anode that can control signal EN and drain electrode connection SPAD.The control circuit is by enabling PMOS
Pipe Men_iDetermine the working condition of entire circuit.Only when EN enable signal is high level, SPAD could just in each pixel
Often work enables pipe conducting when EN enable signal is low level, and the anode of SPAD has been pulled to VDD, pixel unit, which is in, to be quenched
It goes out state.
The OP control type current monitoring module principle figure is as shown in Figure 5.It can be realized using operational amplifier open-loop gain
Approximate empty short characteristic, i.e., have the input voltage V of shared differential input structure alwaysAi=VBi, electric current transmission match, Ai、Bi
Point current potential can change in a wide range according to the variation of the reverse-biased breakdown voltage of SPAD.If the maximum value of the reverse-biased breakdown voltage of SPAD and
Minimum value is respectively VBR,maxAnd VBR,min, median (average value) is VBR0, breakdown voltage is relative to the variation range of median
±ΔVBR.Therefore, for fixed current offset, when the reversed bias voltage of SPAD is larger, BiPoint current potential decline is adaptively to increase
Big reversed bias voltage, AiPoint current potential, which synchronizes, follows decline, AiAnd BiThe minimum point of point current potential can theoretically approach 0, NMOS tube Mi_L
With NMOS tube Mi_RThe current mirror of composition enters linear zone, but still keeps linear current mirror relationship.Into linear current mirror region
Afterwards, OPiOutput necessarily significantly improve, increase the grid voltage current potential of current mirror, keep electric current constant, therefore Ai、BiTwo o'clock current potential is got over
It is low, OPiOutput it is higher.Similar, when the reverse-biased breakdown voltage of SPAD is smaller, through self adaptive control, Ai、BiThe current potential of two o'clock
Also higher, in Ai、BiUnder the premise of point current potential is higher, the grid voltage of current mirror metal-oxide-semiconductor is lower and reaches saturation (approximately constant is not
Become).Ai、BiInput constant-current source should keep enough V under the maximum potential of pointDSVoltage and maintain input current constant.
This OP control type current monitoring module can detect the electric current of SPAD pixel unit to judge its working condition, and generate
Input signal of the different voltage signals to the progress gain-adaptive control of SPAD pixel unit while as active quenching module.
Remember that the electric current on SPAD pixel unit is IQIf IQLevel off to 0, then it represents that SPAD pixel unit is in linear model, at this time Bi
Point current potential is near 0V.If IQIt is several microamperes, then it represents that SPAD pixel unit is in low gain Geiger region, if detection circuit is defeated
Electric current is greater than the electric current on SPAD pixel unit out, at this time VBiIt can reduce automatically, so that the electric current on SPAD pixel unit increases,
But V simultaneouslyBiMinor change very little is influenced on the electric current of detection circuit.The above process realizes the adaptive of SPAD reversed bias voltage
Control, by the adaptive control process, the electric current on SPAD pixel unit is equal to the output electric current of current detection circuit.Herein
In the process, the reversed bias voltage of array SPAD adaptive change according to the preset electric current of common current biasing module, is guaranteed with this
The overbias of each SPAD pixel unit is consistent in array, and then guarantees the consistency of gain.
The active quenching module is by comparator cmpiWith quenching tube Mq_iIt constitutes.BiPoint current potential changes in a wide range, nothing
Method uses the comparator of fixed reference potential driving, BiThe anode of point access SPAD, is followed by comparator cmpi, the reverse phase of comparator
Input termination BiPoint current potential, homophase input terminate AiPoint current potential, (no photon induction) A under statici, Bi two o'clock current potential it is identical but logical
The effect of the equivalent input noise voltage introduced is crossed, so that comparator exports high level.When SPAD pixel unit is in high-gain
When avalanche region, a large amount of avalanche currents generated can be such that the electric current of OP control type current monitoring module increases rapidly, at this time BiPoint
Current potential is lifted rapidly, exceeds AiPoint current potential, leads to comparator cmpiOutput switching activity is to low level.In the process, operational amplifier
OPiThe current mirror of control is nonequilibrium condition, operational amplifier OP in a transient stateiExporting current potential reduces, and leads to NMOS tube Mi_LWith
Mi_RShutdown, IinInput current is to AiPoint capacitor charging, AiPoint current potential rises, and works as AiPoint capacitor and Bi(B when point capacitor is suitableiPoint
Capacitor is approximately SPAD junction capacity), because of IinLess than about two orders of magnitude of SPAD avalanche current, so AiThe point current potential rate of climb is small
In BiPoint about two orders of magnitude of the current potential rate of climb.Even if AiPoint capacitor is less than BiPoint capacitor an order of magnitude, AiPoint current potential rises
Speed is still relatively slow.A as a result,i、BiTwo o'clock forms differential voltage, can do voltage with comparator and compare, the arteries and veins that comparator generates
Rush the detection demand that signal meets quenching tube and subsequent conditioning circuit.
As comparator cmpiWhen exporting a negative pulse, quenching tube Mq_iConducting, BiPoint current potential is essentially pulled up to VDD, through controlling Ai
Point also adaptively rises to supply voltage VDD, Iin=0, operational amplifier OPiExport low level, NMOS tube Mi_LAnd Mi_RPipe is cut
Only, bias circuit current 0, circuit are off mode.After reset signal arrives, BiPoint pulls down to 0, operational amplifier OPiIt is defeated
It gets higher out, NMOS tube Mi_LAnd Mi_RPipe conducting, current mirror starts to adjust again, after certain control time delay, Ai、
BiTwo o'clock is restored to the static point under original test pattern again.The recovery process is by operational amplifier OPiBandwidth and amplitude of oscillation control
System, therefore operational amplifier OPiBandwidth and SR need it is as big as possible.Simultaneously according to operational amplifier OPiFunction in circuit
It is required that input is needed using p-type differential pair, to adapt to Ai、BiLower common-mode point, operational amplifier OPiOutput common mode range
Should be wide as far as possible, with satisfaction pair, NMOS tube Mi_LAnd Mi_RThe various demands of pipe conducting shutdown.
Operational amplifier OPiWith comparator cmpiImportation be identical, therefore can to share difference defeated for the two
Enter structure.As shown in fig. 6, being operational amplifier OPiWith comparator cmpiParticular circuit configurations.Using OTA circuit, difference is defeated
Enter+load to constitute OP structure, while identical Differential Input+another way load+INV constitutes comparator configuration, differential pair is shared.
Specifically, the differential input structure that the operational amplifier and comparator are shared, as shown in fig. 6, being specially：By
PMOS tube M7_i, PMOS tube M8_i, PMOS tube M9_i, PMOS tube M16_i, PMOS tube M17_i, PMOS tube Mp_i, NMOS tube M10_i、NMOS
Pipe M11_i, NMOS tube M12_i, NMOS tube M13_i, NMOS tube M14_i, NMOS tube M15_i, NMOS tube Mn_iWith phase inverter INViIt constitutes.Its
In, by PMOS tube M7_i, PMOS tube M8_i, PMOS tube M9_i, PMOS tube M16_i, PMOS tube M17_i, NMOS tube M10_i, NMOS tube
M11_i, NMOS tube M12_i, NMOS tube M13_i, NMOS tube M14_i, NMOS tube M15_iConstitute operational amplifier OPiAnd its PMOS tube M7_i
For constant current offset, PMOS tube M8_i、M9_iFor Differential Input pipe, NMOS tube M10_i、M11_i、M14_i、M15_iFor load current
The transmission output stage pipe of mirror, PMOS tube M16_i、M17_iConstitute current mirror, NMOS tube M12_i、M13_iConstitute cross-coupled pair.And by
PMOS tube M7_i, PMOS tube M8_i, PMOS tube M9_i, PMOS tube M16_i, PMOS tube Mp_i, NMOS tube M10_i, NMOS tube M11_i、NMOS
Pipe M12_i, NMOS tube M13_i, NMOS tube M14_i, NMOS tube Mn_iWith phase inverter INViConstitute comparator cmpi。
Its circuit connection is specially：The PMOS tube M7_iSource electrode be all connected with power supply VDDAnd PMOS tube M7_iGrid connect
Meet the output of common current biasing module, and PMOS tube M7_iDrain electrode connect PMOS tube M simultaneously8_i, PMOS tube M9_iSource electrode,
The PMOS tube M8_i, PMOS tube M9_iGrid meet shared differential pair input voltage V respectivelyAiAnd VBi；The NMOS tube M10_i's
Grid leak is extremely short to be connect, while connecting PMOS tube M9_iDrain electrode and NMOS tube M14_iGrid；The NMOS tube M11_iGrid leak it is extremely short
It connects, while connecting PMOS tube M8_iDrain electrode and NMOS tube M15_iGrid；The NMOS tube M12_iGrid and NMOS tube M13_i
Drain electrode be shorted, while NMOS tube M12_iGrid connect PMOS tube M8_iDrain electrode and NMOS tube M11_i、M15_i、Mn_iGrid；
The NMOS tube M13_iGrid and NMOS tube M12_iDrain electrode be shorted, while NMOS tube M13_iGrid connect PMOS tube M9_i's
Drain electrode and NMOS tube M10_i、M14_iGrid；The PMOS tube M16_iGrid leak it is extremely short connect, while connecting NMOS tube M14_iLeakage
Pole and PMOS tube M16_iGrid and PMOS tube M17_i、Mp_iGrid be shorted；The operational amplifier OPiOutput connect simultaneously
Meet PMOS tube M17_iWith NMOS tube M15_iDrain electrode and phase inverter INViInput connect PMOS tube Mp simultaneously_iWith NMOS tube Mn_i
Drain electrode and PMOS tube M16_i、M17_i、Mp_iSource electrode be all connected with power supply VDD；The NMOS tube M10_i、M11_i、M12_i、
M13_i、M14_i、M15_i、Mn_iSource grounding；And by phase inverter INViOutput as comparator cmpiOutput.
Artificial mismatch and imbalance are introduced in the load of comparator, are equivalent to and are introduced input offset voltage in a comparator,
But because there cannot be imbalance in amplifier, imbalance is not introduced in shared differential pair structure.In Fig. 6, PMOS tube Mp_iWith
NMOS tube Mn_iOutput constitute comparator output, phase inverter INV can be met againiShaping or adjustment polarity.PMOS tube Mp_iWith
NMOS tube Mn_iThe breadth length ratio of two pipes needs rationally to be arranged, and the proportionate relationship relative to the metal-oxide-semiconductor of same position in amplifier has change
Change.In input voltage VAi=VBiStatic state under, comparator because exist imbalance so that output be high level, sense avalanche current
When VBi>VAi, export low level.In structure shown in Fig. 6, need to PMOS tube M7_iThere is provided biasing separately to determine branch where it
The electric current I on roadBi, operational amplifier OPiPart can also increase it is non-linear to improve gain, bandwidth and Slew Rate, with being conducive to mention
The rate of high comparator.
To sum up, the present invention inhibits array SPAD using the reversed bias voltage of the control method self adaptive control SPAD of current-mode
Gain non-uniformities problem, while overcoming the disadvantage of conventional voltage mould mode circuit complexity, reduce area and power consumption, more
Add suitable array application, realizes array SPAD flatness self adaptive control.
Embodiments of the present invention are explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned implementations
Mode within the knowledge of a person skilled in the art can also be without departing from the purpose of the present invention
It makes a variety of changes.
Claims (6)
1. a kind of current-mode array SPAD flatness adaptation control circuit, which is characterized in that including：
Common current biasing module, is made of constant-current source and current mirroring circuit, for being array SPAD's by current mirroring circuit
Each SPAD pixel unit provides identical constant current source current；
Several single pixel circuits corresponding with the SPAD pixel unit quantity in array SPAD, wherein each single pixel circuit wraps
Include current monitoring module and active quenching module；The current monitoring module is made of operational amplifier and current mirror, for examining
The working condition of SPAD pixel unit in array SPAD is surveyed, and generates different voltage signals and gain is carried out to SPAD pixel unit
Self adaptive control, while using output voltage signal as the input signal of active quenching module；The active quenching module, by than
It is constituted compared with device and quenching tube, for triggering work according to the output voltage signal of current monitoring module, control quenching tube generates snow
It collapses and signal is quenched；
Wherein, the current monitoring module is made of operational amplifier and current mirror, specially：By operational amplifier OPi, by
PMOS tube M4_iWith PMOS tube M5_iThe common-source common-gate current mirror of composition, by NMOS tube Mi_LWith NMOS tube Mi_RThe electric current microscope group of composition
At the PMOS tube M4_iGrid, PMOS tube M5_iGrid be shorted to common current biasing module and PMOS tube M respectively4_i
Source electrode connect power supply VDDAnd PMOS tube M4_iDrain electrode connect PMOS tube M5_iSource electrode；The NMOS tube Mi_LWith NMOS tube Mi_R
Grid be shorted and NMOS tube Mi_LDrain electrode connect PMOS tube M5_iDrain electrode, NMOS tube Mi_RDrain electrode connection SPAD anode
And NMOS tube Mi_LWith NMOS tube Mi_RSource electrode ground connection；The operational amplifier OPiNon-inverting input terminal and inverting input terminal point
It Lian Jie not NMOS tube Mi_LDrain electrode and SPAD anode, and operational amplifier OPiOutput end be connected to NMOS tube M simultaneouslyi_L
And Mi_RGrid；Using the anode of SPAD as the output end of current monitoring module.
2. current-mode array SPAD flatness adaptation control circuit according to claim 1, it is characterised in that：Institute
It states common current biasing module to be made of constant-current source and current mirroring circuit, specially：By constant-current source IDC, NMOS tube M1, NMOS tube
M2, NMOS tube M6, PMOS tube M3, PMOS tube M4With PMOS tube M5It constitutes, wherein constant-current source IDCConnect NMOS tube M1Drain electrode, NMOS
Pipe M1Grid leak is extremely short to be connect while meeting NMOS tube M2Grid；The NMOS tube M2Drain electrode connect PMOS tube M3Drain electrode and PMOS
Pipe M3Grid leak extremely short connect while connecting PMOS tube M5Grid；The PMOS tube M5Source electrode connect PMOS tube M4Drain electrode, and
PMOS tube M4Grid connect PMOS tube M5Drain electrode；The NMOS tube M6Drain electrode connect PMOS tube M5Drain electrode；The NMOS
Pipe M1、M2、M6Source grounding and PMOS tube M3, PMOS tube M4Source electrode be all connected with power supply VDD。
3. current-mode array SPAD flatness adaptation control circuit according to claim 1, it is characterised in that：Institute
Active quenching module is stated by comparator and PMOS quenching tube Mq_iIt constitutes, specially：Comparator cmpiInput terminal connection electric current prison
Survey module and comparator cmpiOutput terminate PMOS quenching tube Mq_iGrid, and PMOS quenching tube Mq_iSource electrode connect power supply
VDDAnd its drain electrode is connected to the anode of SPAD.
4. current-mode array SPAD flatness adaptation control circuit according to claim 1, it is characterised in that：Institute
It states operational amplifier and comparator shares differential input structure.
5. current-mode array SPAD flatness adaptation control circuit according to claim 4, it is characterised in that：Institute
The differential input structure that operational amplifier and comparator are shared is stated, specially：By PMOS tube M7_i, PMOS tube M8_i, PMOS tube
M9_i, PMOS tube M16_i, PMOS tube M17_i, NMOS tube M10_i, NMOS tube M11_i, NMOS tube M12_i, NMOS tube M13_i, NMOS tube
M14_i, NMOS tube M15_iConstitute operational amplifier OPi, and by PMOS tube M7_i, PMOS tube M8_i, PMOS tube M9_i, PMOS tube M16_i、
PMOS tube Mp_i, NMOS tube M10_i, NMOS tube M11_i, NMOS tube M12_i, NMOS tube M13_i, NMOS tube M14_i, NMOS tube Mn_iWith it is anti-
Phase device INViConstitute comparator cmpi；Wherein, the PMOS tube M7_iSource electrode be all connected with power supply VDDAnd PMOS tube M7_iGrid
Connect the output of common current biasing module, and PMOS tube M7_iDrain electrode connect PMOS tube M simultaneously8_i, PMOS tube M9_iSource
Pole, the PMOS tube M8_i, PMOS tube M9_iGrid be separately connected the input voltage V of shared differential input structureAiAnd VBi；Institute
State NMOS tube M10_iGrid leak it is extremely short connect, while connecting PMOS tube M9_iDrain electrode and NMOS tube M14_iGrid；The NMOS tube
M11_iGrid leak it is extremely short connect, while connecting PMOS tube M8_iDrain electrode and NMOS tube M15_iGrid；The NMOS tube M12_iGrid
Pole and NMOS tube M13_iDrain electrode be shorted, while NMOS tube M12_iGrid connect PMOS tube M8_iDrain electrode and NMOS tube M11_i、
M15_i、Mn_iGrid；The NMOS tube M13_iGrid and NMOS tube M12_iDrain electrode be shorted, while NMOS tube M13_iGrid
Connect PMOS tube M9_iDrain electrode and NMOS tube M10_i、M14_iGrid；The PMOS tube M16_iGrid leak it is extremely short connect, connect simultaneously
NMOS tube M14_iDrain electrode and PMOS tube M16_iGrid and PMOS tube M17_i、Mp_iGrid be shorted；The operational amplifier
OPiOutput connect PMOS tube M simultaneously17_iWith NMOS tube M15_iDrain electrode and phase inverter INViInput connect PMOS tube simultaneously
Mp_iWith NMOS tube Mn_iDrain electrode and PMOS tube M16_i、M17_i、Mp_iSource electrode be all connected with power supply VDD；The NMOS tube
M10_i、M11_i、M12_i、M13_i、M14_i、M15_i、Mn_iSource grounding；And by phase inverter INViOutput as comparator
cmpiOutput.
6. current-mode array SPAD flatness adaptation control circuit according to claim 1, it is characterised in that：Also
Enabled PMOS tube M including the working condition for controlling entire circuiten_i, wherein PMOS tube Men_iSource electrode connect power supply
VDDAnd its grid connection makes to can control signal EN and drain electrode connects the anode of SPAD.
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| CN201810982661.7A CN108874020B (en) | 2018-08-27 | 2018-08-27 | Current mode array SPAD gain uniformity self-adaptive control circuit |
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| CN201810982661.7A CN108874020B (en) | 2018-08-27 | 2018-08-27 | Current mode array SPAD gain uniformity self-adaptive control circuit |
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| CN111103452A (en) * | 2019-12-20 | 2020-05-05 | 华南理工大学 | Full-wave inductive current sensor with segmented linear self-adaptive bias |
| CN111141397A (en) * | 2019-11-15 | 2020-05-12 | 西安电子科技大学 | Nonuniformity correction circuit for APD detector array |
| CN112230707A (en) * | 2019-07-15 | 2021-01-15 | 瑞昱半导体股份有限公司 | Output circuit |
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| Publication number | Publication date |
|---|---|
| CN108874020B (en) | 2020-01-03 |
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