CN108873519A - COA type array substrate and preparation method thereof - Google Patents
COA type array substrate and preparation method thereof Download PDFInfo
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- CN108873519A CN108873519A CN201810679386.1A CN201810679386A CN108873519A CN 108873519 A CN108873519 A CN 108873519A CN 201810679386 A CN201810679386 A CN 201810679386A CN 108873519 A CN108873519 A CN 108873519A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
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- 239000010410 layer Substances 0.000 claims description 252
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000011241 protective layer Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 14
- 238000005240 physical vapour deposition Methods 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 14
- 230000008033 biological extinction Effects 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000002745 absorbent Effects 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 230000003042 antagnostic effect Effects 0.000 claims description 3
- 230000011514 reflex Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 21
- 239000011159 matrix material Substances 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 13
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000002464 physical blending Methods 0.000 description 2
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- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of COA type array substrate and preparation method thereof.The COA type array substrate includes：Underlay substrate,TFT layer on the underlay substrate,Anti-reflecting layer on the TFT layer and the color light resistance layer on the anti-reflecting layer,The anti-reflecting layer weakens reflected light by generating phase shift light component in the exposure of the Other substrate materials of color light resistance layer,The exposure energy range and focal length of the Other substrate materials of color light resistance layer can be effectively increased,Reduce influence of the geometry difference for the matrix that underlay substrate and TFT layer are constituted to color light resistance layer key size evenness,The configuration for alleviating matrix leads to swing curve effect and notch effect caused by color light resistance layer thickness difference,To improve the homogeneity of color light resistance layer critical size and the resolution ratio of color light resistance layer,And the anti-reflecting layer can also directly instead of being formed between TFT layer and color light resistance layer in the prior art passivation layer,Simplify processing procedure,Save cost.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of COA type array substrate and preparation method thereof.
Background technique
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal
Display, LCD) and active matrix drive type organic electroluminescence display device and method of manufacturing same (Active Matrix Organic Light-
Emitting Diode, AMOLED) in main driving element, the display performance of direct relation panel display apparatus.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and back
Optical mode group (backlight module).The working principle of liquid crystal display panel is in thin film transistor base plate (Thin Film
Transistor Array Substrate, TFT Array Substrate) and colored filter (Color Filter, CF)
Pour into liquid crystal molecule between substrate, and apply pixel voltage and common voltage respectively on two plate bases, by pixel voltage and
The light refraction of backlight module is come out and generates picture by the direction of rotation of the electric field controls liquid crystal molecule formed between common voltage
Face.
With flourishing for photoelectric technology, the direction of photoetching technique towards higher resolution is strided forward, it is desirable that RGB
The line width of pixel is smaller and smaller.The photoresists such as red color resistance, green color blocking and blue color blocking are made in liquid crystal display panel to be formed
Figure the molding situation that effect and notch effect etc. influence photoresist is waved due to standing wave effect, such as standing wave effect makes
Photoresist can interfere between transmitted light and reflected light in exposure process, the interference between the light wave of this identical frequency
Standing wave can be formed in the exposure area of photoresist, lead to photoresist after development and will form wavy out-of-flatness side wall.Especially
It is that is used now be produced on colored filter in array substrate the technology of (Color-filter On Array, COA),
Spacer material is produced in array substrate in the technology liquid crystal display of (Post Spacer On Array, POA) and is showed especially
Significantly.
Summary of the invention
The purpose of the present invention is to provide a kind of COA type array substrates, can be improved the equal of color light resistance layer critical size
The resolution ratio of one property and color light resistance layer.
The object of the invention is also to provide a kind of production methods of COA type array substrate, can be improved color light resistance layer
The homogeneity of critical size and the resolution ratio of color light resistance layer.
To achieve the above object, the present invention provides a kind of COA type array substrates, including：Underlay substrate is set to the lining
TFT layer on substrate, the anti-reflecting layer on the TFT layer and the color light resistance layer on the anti-reflecting layer.
The anti-reflecting layer includes blending type material, backbone chain type material or graft type material.
The graft type material includes main polymer chain and grafts on multiple extinction groups on the main polymer chain.
The extinction group includes the light absorbent for the light that absorbing wavelength is 200-400um.
The TFT layer includes the first metal layer on the underlay substrate, exhausted on the first metal layer
Edge layer, the active layer on the insulating layer and the second metal layer on the active layer.
The COA type array substrate further includes the protective layer in the color light resistance layer and is set to the protective layer
On pixel electrode, the pixel electrode by one run through anti-reflecting layer, the via hole of color light resistance layer and protective layer and the second gold medal
Belong to layer contact.
The material of the underlay substrate is glass；The first metal layer and the material of second metal layer are aluminium, copper, aluminium
One of alloy and copper alloy；The anti-reflecting layer with a thickness of 1-5um；The color light resistance layer includes red color resistance, green
Color color blocking and blue color blocking；The material of the protective layer is silicon nitride, silica or organic transparent photoresist.
The present invention also provides a kind of production methods of COA type array substrate, include the following steps：
Step S1, underlay substrate is provided, forms TFT layer on the underlay substrate；
Step S2, anti-reflecting layer is formed on the TFT layer；
Step S3, color light resistance layer is formed on the anti-reflecting layer.
The step S1 specific step is：One layer of first gold medal is formed on the underlay substrate by physical vapour deposition (PVD)
Belong to film layer and patterning is carried out to first metallic diaphragm and forms the first metal layer；It is formed on the first metal layer absolutely by being deposited
Edge layer；One layer of second metallic diaphragm is formed on the insulating layer by chemical vapor deposition and second metallic diaphragm is carried out
Patterning forms active layer；Form one layer of third metallic diaphragm on the active layer by physical vapour deposition (PVD) and to the third
Metallic diaphragm carries out patterning and forms second metal layer；The first metal layer, insulating layer, active layer and second metal layer structure
At TFT layer.
The production method of the COA type array substrate further includes step S4, by being vaporized on shape in the color light resistance layer
Dry ecthing is carried out at protective layer, and by plasma antagonistic reflex layer, color light resistance layer and protective layer, obtains one through anti-reflective
Penetrate the via hole of layer, color light resistance layer and protective layer；
Step S5, pixel electrode is formed on the protective layer；The pixel electrode passes through the via hole and second metal layer
Contact.
Beneficial effects of the present invention：COA type array substrate of the invention includes：Underlay substrate is set to the underlay substrate
On TFT layer, the anti-reflecting layer on the TFT layer and the color light resistance layer on the anti-reflecting layer, the anti-reflective
It penetrates layer and weakens reflected light by generating phase shift light component in the exposure of the Other substrate materials of color light resistance layer, coloured silk can be effectively increased
The exposure energy range and focal length of the Other substrate materials of coloured light resistance layer reduce the several of the matrix that underlay substrate and TFT layer are constituted
What influence of the architectural difference to color light resistance layer key size evenness, the configuration for alleviating matrix lead to color light resistance layer thickness not
Swing curve effect and notch effect with caused by, to improve the homogeneity and colourama of color light resistance layer critical size
The resolution ratio of resistance layer, and the anti-reflecting layer can also be directly instead of being formed between TFT layer and color light resistance layer in the prior art
Passivation layer, simplify processing procedure, save cost.The production method of COA type array substrate of the invention, can reduce underlay substrate and
Influence of the geometry difference for the matrix that TFT layer is constituted to color light resistance layer key size evenness, alleviates the structure of matrix
Type leads to swing curve effect and notch effect caused by color light resistance layer thickness difference, to improve color light resistance layer key
The homogeneity of size and the resolution ratio of color light resistance layer.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the structural schematic diagram of COA type array substrate of the invention；
Fig. 2 is the flow chart of the production method of COA type array substrate of the invention；
Fig. 3 is the schematic diagram of the step S1 of the production method of COA type array substrate of the invention；
Fig. 4 is the schematic diagram of the step S2 of the production method of COA type array substrate of the invention；
Fig. 5 is the schematic diagram of the step S3 of the production method of COA type array substrate of the invention；
Fig. 6 is the schematic diagram of the step S4 of the production method of COA type array substrate of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the present invention provides a kind of COA type array substrate, including：Underlay substrate 10 is set to the substrate base
TFT layer 20 on plate 10, the anti-reflecting layer 30 on the TFT layer 20 and the colourama on the anti-reflecting layer 30
Resistance layer 40.
It should be noted that the present invention is on TFT layer 20 by being arranged one layer of anti-reflecting layer 30, then on anti-reflecting layer 30
One layer of color light resistance layer 40 is set, and the anti-reflecting layer 30 is by generating phase in the exposure of the Other substrate materials of color light resistance layer 40
It moves light component and weakens reflected light, the exposure energy range and focal length of the Other substrate materials of color light resistance layer 40 can be effectively increased, drop
The geometry difference for the matrix that low underlay substrate 10 and TFT layer 20 are constituted is to 40 key size evenness of color light resistance layer
It influences, the configuration for alleviating matrix leads to swing curve effect (swing curve effect caused by 40 thickness of color light resistance layer difference
Refer in photoresist exposure, is exposed with photoresist of the identical exposure dose to different-thickness, so as to cause critical size
Error) and notch effect (notch effect refer to photoresist exposure when, incident ray shines directly on metal or polysilicon and sends out
Reflection is penetrated, the photoresist for not needing exposure is exposed, notch occurs in the photoresist bottom for not needing exposure after development), from
And improve the homogeneity of 40 critical size of color light resistance layer and the resolution ratio of color light resistance layer 40.And the anti-reflecting layer 30 is also
Processing procedure can be simplified directly instead of the passivation layer being formed between TFT layer 20 and color light resistance layer 30 in the prior art, save at
This.
Specifically, the anti-reflecting layer 30 includes blending type material, backbone chain type material or graft type material.
Further, the blending type material is that high molecular polymer and extinction group pass through simple physical blending；Institute
Stating backbone chain type material includes main polymer chain and comprising extinction group in the polymer backbone；Since the preparation of graft type material is anti-
The method in reflecting layer 30 is simply controllable, therefore the present invention preferably sets graft type material for the material of anti-reflecting layer 30, described
Graft type material includes main polymer chain and grafts on multiple extinction groups on the main polymer chain.
Specifically, the extinction group include absorbing wavelength be 200-400um light light absorbent, such as naphthalene and
Anthracene etc. when being exposed using ultraviolet (UV) light to color light resistance layer 40, largely absorbs ultraviolet light, further decreases coloured silk
The reflected light when exposure of the Other substrate materials of coloured light resistance layer 40.
Specifically, the TFT layer 20 includes the first metal layer 21 being set on the underlay substrate 10, is set to described first
Insulating layer 22 on metal layer 21, the active layer 23 on the insulating layer 22 and second on the active layer 23
Metal layer 24.
Specifically, the COA type array substrate further includes the protective layer 50 in the color light resistance layer 40 and sets
Pixel electrode 60 on the protective layer 50, the pixel electrode 60 run through anti-reflecting layer 30, color light resistance layer 40 by one
And the via hole 51 of protective layer 50 is contacted with second metal layer 24.
Specifically, the material of the underlay substrate 10 is glass；The material of the first metal layer 21 and second metal layer 24
Material is one of aluminium, copper, aluminium alloy and copper alloy；The anti-reflecting layer 30 with a thickness of 1-5um；The color light resistance layer 40
Including the red color resistance, green color blocking and blue color blocking arranged in any order；The material of the protective layer 50 is silicon nitride, oxygen
SiClx or organic transparent photoresist.
Referring to Fig. 2, being based on above-mentioned COA type array substrate, the present invention also provides a kind of production sides of COA type array substrate
Method includes the following steps：
Step S1, referring to Fig. 3, providing underlay substrate 10, TFT layer 20 is formed on the underlay substrate 10；
Step S2, referring to Fig. 4, forming anti-reflecting layer 30 on the TFT layer 20；
Step S3, referring to Fig. 5, forming color light resistance layer 40 on the anti-reflecting layer 30.
It should be noted that the present invention is on TFT layer 20 by forming one layer of anti-reflecting layer 30, then on anti-reflecting layer 30
One layer of color light resistance layer 40 is formed, the anti-reflecting layer 30 is by generating phase in the exposure of the Other substrate materials of color light resistance layer 40
It moves light component and weakens reflected light, the exposure energy range and focal length of the Other substrate materials of color light resistance layer 40 can be effectively increased, drop
The geometry difference for the matrix that low underlay substrate 10 and TFT layer 20 are constituted is to 40 key size evenness of color light resistance layer
It influencing, the configuration for alleviating matrix leads to swing curve effect and notch effect caused by 40 thickness of color light resistance layer difference, from
And improve the homogeneity of 40 critical size of color light resistance layer and the resolution ratio of color light resistance layer 40.And the anti-reflecting layer 30 is also
Processing procedure can be simplified directly instead of the passivation layer being formed between TFT layer 20 and color light resistance layer 30 in the prior art, save at
This.
Specifically, the anti-reflecting layer 30 includes blending type material, backbone chain type material or graft type material.
Further, the blending type material is that high molecular polymer and extinction group pass through simple physical blending；Institute
Stating backbone chain type material includes main polymer chain and comprising extinction group in the polymer backbone；Since the preparation of graft type material is anti-
The method in reflecting layer 30 is simply controllable, therefore the present invention preferably sets graft type material for the material of anti-reflecting layer 30, described
Graft type material includes main polymer chain and grafts on multiple extinction groups on the main polymer chain.
Specifically, the extinction group include absorbing wavelength be 200-400um light light absorbent, such as naphthalene and
Anthracene etc. when being exposed using ultraviolet (UV) light to color light resistance layer 40, largely absorbs ultraviolet light, further decreases coloured silk
The reflected light when exposure of the Other substrate materials of coloured light resistance layer 40.
Specifically, the step S1 specific step is：Through physical vapour deposition (PVD) (PVD) on the underlay substrate 10
It forms one layer of first metallic diaphragm and patterning is carried out to first metallic diaphragm and form the first metal layer 21；By being vaporized on
Insulating layer 22 is formed on one metal layer 21；One layer of second gold medal is formed on the insulating layer 22 by chemical vapor deposition (CVD)
Belong to film layer and patterning is carried out to second metallic diaphragm and forms active layer 23；Have by physical vapour deposition (PVD) (PVD) described
One layer of third metallic diaphragm is formed in active layer 23 and patterning is carried out to the third metallic diaphragm forms second metal layer 24.It is described
The first metal layer 21, insulating layer 22, active layer 23 and second metal layer 24 constitute TFT layer 20.
Specifically, which is exposure (Photo), etching (Etch) and removing (Strip).
Specifically, in the step S2, anti-reflecting layer 30 is formed on the TFT layer 20 by the method for coating.
Specifically, in the step S3, by being coated with one layer of red photoresist on the anti-reflecting layer 30, and it is red to this
Coloured light photoresist is exposed development and forms red color resistance, one layer of green photoresist is coated on the anti-reflecting layer 30, and to this
Green photoresist is exposed development and forms green color blocking, blue layer photoresist is coated on the anti-reflecting layer 30, and right
The blue photoresist is exposed development and forms blue color blocking.Wherein the formation of red color resistance, green color blocking and blue color blocking is first
Sequence can combine in any order afterwards.The red color resistance, green color blocking and blue color blocking constitute color light resistance layer 40.
Specifically, the production method of the COA type array substrate further includes step S4, referring to Fig. 6, by being vaporized on
Formation protective layer 50 in color light resistance layer 40 is stated, and passes through plasma antagonistic reflex layer 30, color light resistance layer 40 and protective layer
50 carry out dry ecthing, obtain a via hole 51 for running through anti-reflecting layer 30, color light resistance layer 40 and protective layer 50；
Step S5, pixel electrode 60 is formed on the protective layer 50；The pixel electrode 60 passes through the via hole 51 and the
The contact of two metal layers 24.
Specifically, the material of the underlay substrate 10 is glass；The material of the first metal layer 21 and second metal layer 24
Material is one of aluminium, copper, aluminium alloy and copper alloy；The anti-reflecting layer 30 with a thickness of 1-5um；The material of the protective layer 50
Material is silicon nitride, silica or organic transparent photoresist.
In conclusion COA type array substrate of the invention includes：Underlay substrate, the TFT on the underlay substrate
Layer, the anti-reflecting layer on the TFT layer and the color light resistance layer on the anti-reflecting layer, the anti-reflecting layer pass through
Phase shift light component is generated in the exposure of the Other substrate materials of color light resistance layer and weakens reflected light, can effectively increase color light resistance layer
Other substrate materials exposure energy range and focal length, the geometry for reducing the matrix that underlay substrate and TFT layer are constituted is poor
The different influence to color light resistance layer key size evenness, the configuration for alleviating matrix cause color light resistance layer thickness different and cause
Swing curve effect and notch effect, thus improve color light resistance layer critical size homogeneity and color light resistance layer point
Resolution, and the anti-reflecting layer can also directly instead of the passivation layer being formed between TFT layer and color light resistance layer in the prior art,
Simplify processing procedure, saves cost.The production method of COA type array substrate of the invention can reduce underlay substrate and TFT layer institute structure
At matrix influence of the geometry difference to color light resistance layer key size evenness, the configuration for alleviating matrix leads to colour
Swing curve effect and notch effect caused by photoresist layer thickness difference, to improve the uniform of color light resistance layer critical size
The resolution ratio of property and color light resistance layer.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (10)
1. a kind of COA type array substrate, which is characterized in that including：Underlay substrate (10) is set on the underlay substrate (10)
TFT layer (20), the anti-reflecting layer (30) being set on the TFT layer (20) and the colourama being set on the anti-reflecting layer (30)
Resistance layer (40).
2. COA type array substrate as described in claim 1, which is characterized in that the anti-reflecting layer (30) includes that profile is blended
Material, backbone chain type material or graft type material.
3. COA type array substrate as claimed in claim 2, which is characterized in that the graft type material includes main polymer chain
And graft on multiple extinction groups on the main polymer chain.
4. COA type array substrate as claimed in claim 3, which is characterized in that the extinction group includes that absorbing wavelength is
The light absorbent of the light of 200-400um.
5. COA type array substrate as described in claim 1, which is characterized in that the TFT layer (20) includes being set to the substrate
The first metal layer (21) on substrate (10), is set to the insulation at the insulating layer (22) on the first metal layer (21)
Active layer (23) on layer (22) and the second metal layer (24) on the active layer (23).
6. COA type array substrate as claimed in claim 5, which is characterized in that further include being set to the color light resistance layer (40)
On protective layer (50) and the pixel electrode (60) that is set on the protective layer (50), the pixel electrode (60) passes through consistent
The via hole (51) for wearing anti-reflecting layer (30), color light resistance layer (40) and protective layer (50) is contacted with second metal layer (24).
7. COA type array substrate as claimed in claim 6, which is characterized in that the material of the underlay substrate (10) is glass；
The material of the first metal layer (21) and second metal layer (24) is one of aluminium, copper, aluminium alloy and copper alloy；It is described
Anti-reflecting layer (30) with a thickness of 1-5um；The color light resistance layer (40) includes red color resistance, green color blocking and blue color blocking；
The material of the protective layer (50) is silicon nitride, silica or organic transparent photoresist.
8. a kind of production method of COA type array substrate, which is characterized in that include the following steps：
Step S1, underlay substrate (10) are provided, forms TFT layer (20) on the underlay substrate (10)；
Step S2, it is formed on the TFT layer (20) anti-reflecting layer (30)；
Step S3, it is formed on the anti-reflecting layer (30) color light resistance layer (40).
9. the production method of COA type array substrate as claimed in claim 8, which is characterized in that the step S1 is specifically walked
Suddenly it is：One layer of first metallic diaphragm is formed on the underlay substrate (10) by physical vapour deposition (PVD) and to first metal film
Layer carries out patterning and forms the first metal layer (21)；Insulating layer (22) are formed by being vaporized on the first metal layer (21)；Pass through
Chemical vapor deposition forms one layer of second metallic diaphragm on the insulating layer (22) and carries out pattern to second metallic diaphragm
Change forms active layer (23)；One layer of third metallic diaphragm is formed on the active layer (23) by physical vapour deposition (PVD) and to this
Third metallic diaphragm carries out patterning and forms second metal layer (24)；The first metal layer (21), insulating layer (22), active layer
(23) and second metal layer (24) constitutes TFT layer (20).
10. the production method of COA type array substrate as claimed in claim 8, which is characterized in that further include step S4, pass through
It is vaporized on the color light resistance layer (40) and forms protective layer (50), and pass through plasma antagonistic reflex layer (30), colourama
Resistance layer (40) and protective layer (50) carry out dry ecthing, obtain one through anti-reflecting layer (30), color light resistance layer (40) and protective layer
(50) via hole (51)；
Step S5, it is formed on the protective layer (50) pixel electrode (60)；The pixel electrode (60) passes through the via hole (51)
It is contacted with second metal layer (24).
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