CN108873486A - A method of mask plate and light orientation for substrate light orientation - Google Patents
A method of mask plate and light orientation for substrate light orientation Download PDFInfo
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- CN108873486A CN108873486A CN201810504443.2A CN201810504443A CN108873486A CN 108873486 A CN108873486 A CN 108873486A CN 201810504443 A CN201810504443 A CN 201810504443A CN 108873486 A CN108873486 A CN 108873486A
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- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000005855 radiation Effects 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 8
- 238000005286 illumination Methods 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000002457 bidirectional effect Effects 0.000 abstract description 3
- 238000004904 shortening Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A kind of method that the present invention proposes the mask plate for substrate light orientation and light orientation, including the transparent area for repeating to be arranged alternately and echo area, echo area includes at least one vertically disposed reflecting mirror, substrate surface is reached with former incident angle direction by the light of transparent area, reaches substrate surface after mirror mirror reflection by the light of echo area.Mask plate through the invention can provide bidirectional optical path simultaneously and carry out illumination orientation to substrate, improve the utilization rate of ultraviolet light, reduce equipment light illuminating unit, while shortening light alignment manufacture process time, greatly improving production efficiency, greatly reduce production cost.
Description
Technical field
The invention belongs to the technical fields of liquid crystal display light orientation, and in particular to a kind of mask plate for substrate light orientation
And the method for light orientation.
Technical background
The mankind obtain external information 70% come from vision, with the development of science and technology, display at information transmit with
And the important tool of man-machine communication.Develop most mature in contemporary display technology, occupation rate of market is highest to surely belong to thin film transistor (TFT)
Liquid crystal display (Thin Film Transistor-Liquid Crystal Display, TFT-LCD).TFT-LCD working principle
It is under electric field action, the variation in arrangement can occur for internal liquid crystal molecule, and this phenomenon is referred to as electrooptic effect.Liquid crystal molecule
The variation of structure can then show as the variation of light and shade to influence to change by its light by the effect of polaroid,
Cooperate colored filter (Color Filter, CF) again, people, which can realize, finally controls light by the control to electric field
Gray scale and brightness change, thus achieve the purpose that show image.In TFT-LCD device, in order to improve response speed, need
Liquid crystal molecule proper alignment and forms certain pre-tilt angle at electrode interface, therefore is needed in process of production to TFT substrate
Orientation operation is carried out with the alignment film of CF substrate surface.Current alignment technique is divided into friction matching and light orientation, and wherein light is matched
It is mainly that the alignment materials that ultraviolet light sensitiveness to light is high, stability is good is used to carry out illumination orientation to technology.Compared to friction
Alignment technique, light alignment technique have many advantages, such as it is non-contact, pollution-free, without electrostatic, can be achieved multidomain orientation, therefore obtain extensively
Application.
Ultraviolet light vertical orientation technology (UV2A) be it is a kind of by polarized ultraviolet precision control orientation membrane molecule be biased to
Novel smooth alignment technique.There are the spies such as high opening, high contrast, quick response using the liquid crystal display panel that UV2A technology is produced
Property, this makes a kind of light alignment technique of the UV2A as great competitiveness.Polymerization high score in light process of alignment, in alignment film
After son is irradiated by polarized ultraviolet, due to the presence for the light monomer that becomes in macromolecule, polymerization macromolecule can be made inclined to direction of illumination
It moves, to form the angle of liquid crystal molecular orientation.In order to make liquid crystal display panel reach the display effect of wide viewing angle, needed in UV2A technique
It to use the polarization state ultraviolet light of certain tilt angle as light source, two are carried out to the sub-pixel of TFT substrate or CF substrate surface
Secondary or multiple two-way irradiation, to form the orientation effect of 4Domian, 8Domian.
UV2A technique realizes that the critical component of bi-directional light irradiation is exactly mask plate, and mask plate used at present is one semi-transparent
With the design of half shading.In light process of alignment, the shading light part on mask plate first covers half sub-pixel, using covering
Light transmission part in film version carries out light orientation to other half sub-pixel；Then substrate is rotated into 180 degree, reuses exposure mask
Version had carried out the half sub-pixel of illumination orientation before blocking, then carried out light to unexposed half sub-pixel
According to orientation, to achieve the purpose that both full-pixel bi-directional light is shone.
But the design that the mask plate that UV2A technique is used at present is semi-transparent using half shading one, to the benefit of ultraviolet light
It is low with rate.In order to achieve the purpose that both full-pixel bi-directional light is shone, each pixel at least carries out Unidirectional light photograph twice, and substrate at least passes through
Cross the rotation of 180 degree, this results in the processing time of light orientation elongated, and the design of equipment light illuminating unit repeats, board cost at
This is higher, does not meet the requirement of economical production.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of mask plate and light alignment method for substrate light orientation,
By the way that alternately arranged transparent area and echo area are arranged on mask plate, realize to each sub-pixel while carrying out two-way exposure,
The utilization rate of ultraviolet light doubles, and energy consumption substantially reduces.Halve equipment overall structure unit simultaneously, greatlys save life
Production efficiency is also greatly improved while producing cost.
Technical solution provided by the invention is as follows：
The present invention provides a kind of mask plate for substrate light orientation, and the mask plate includes the light transmission for repeating to be arranged alternately
Area and echo area, the echo area include at least one vertically disposed reflecting mirror, and the light by the transparent area is entered with original
It penetrates angle direction and reaches substrate surface, reach substrate surface after reflecting mirror reflection by the light of the echo area.
Preferably, the transparent area and the width of echo area are equal, and light reaches the light side of substrate surface from transparent area
To with from echo area reach substrate surface radiation direction be in mirror symmetry.
Preferably, the reflecting mirror includes reflecting layer, basal layer and absorbed layer, wherein the reflecting layer enters towards light
Penetrate direction.
Preferably, the absorption layer surface of a reflecting mirror to the distance between the reflection layer surface of its adjacent mirror be D,
And D≤H*tan θ, wherein H is the higher mirror, and θ is the angle of incident ray and the reflecting mirror.
Preferably, the transparent area further includes the blocking portion positioned at light emission side.
Preferably, the blocking portion and the reflecting mirror are correspondingly arranged side by side.
The present invention also provides the method that a kind of pair of substrate carries out light orientation, using have the transparent area for repeating to be arranged alternately and
The mask plate of echo area, the echo area include at least one vertically disposed reflecting mirror, by the light of the transparent area with
Former incident angle direction reaches substrate surface, reaches substrate after mirror mirror reflection by the light of the echo area
Surface.
Preferably, the light of adjacent mirror reflection is passed through in the mirror absorption part.
Preferably, the transparent area stop portions light passes through.
Preferably, and amount light symmetrical by the radiation direction of the transparent area and echo area is equal.
Compared with prior art, mask plate of the invention and the method for light orientation can provide bidirectional optical path to substrate simultaneously
Illumination orientation is carried out, the utilization rate of ultraviolet light is improved, when reducing equipment light illuminating unit, while shortening the processing procedure of light orientation
Between, production efficiency is greatly improved, production cost is greatly reduced.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, the present invention is given furtherly
It is bright.
Fig. 1 show the partial top view of mask plate of the present invention；
Fig. 2 show the mirror structure schematic diagram of mask plate of the present invention；
Fig. 3 show mask plate A-A direction schematic diagram of the present invention；
Fig. 4 (a)-Fig. 4 (c) show the reflecting mirror schematic diagram of mask plate of the present invention；
Fig. 5 show the partial bottom view of mask plate of the present invention.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.In addition, there is identical structure or function in some figures so that simplified form is easy to understand
Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated
" only this ", can also indicate the situation of " more than one ".
As shown in Figure 1, mask plate 10, for the light allocating process of substrate, basic material is for transparency silica glass or thoroughly
Ming tree rouge, thickness are preferably 3 millimeters, the transparent area 1 including repeating to be arranged alternately and echo area 2, each transparent area 1 and reflection
The width in area 2 is equal, it is preferable that transparent area 1 and the wide of echo area 2 are 300~400 microns.Each echo area 2 includes at least
One reflecting mirror 3 in vertical direction setting, reflecting mirror 3 is embedded in inside echo area 2, and reflecting mirror 3 is in a column direction
It is arranged at equal interval.Incident ray (0-90 °) irradiation mask plate at a certain angle, the arrow direction in Fig. 1 represent ultraviolet light
Exit direction.
As shown in Fig. 2, reflecting mirror 3 includes three parts, it is reflecting layer 31, basal layer 32 and absorbed layer 33 respectively.Reflection
31 incident direction towards ultraviolet light of layer, for reflecting ultraviolet light, absorbed layer 33 is located at anti-for absorbing ultraviolet light, basal layer 3
It penetrates between layer 31 and absorbed layer 33.
For the structure of reflecting mirror 3, laser-engraving technique is used first, is carved in echo area 2 at interval of certain distance
Basal layer 32 out, basal layer 32 are ultraviolet resistance materials.Evaporation coating technique is reused in basal layer 32 towards 4 incident direction of ultraviolet light
Side plate ultraviolet optical reflection film to form reflecting layer 31, reflecting layer 31 can mutually be tied using the high low-index material of multilayer
The composite membrane of conjunction, it is preferable that reflecting layer 31 is basal layer/HfO2/UV-SiO2/MgF2 film.Finally use magnetron sputtering plating
Technology plates UV Absorption film backwards to the side of 4 incident direction of ultraviolet light in basal layer 32 to form absorbed layer 33, absorbs
Layer 33 can use the semiconductor material thin film of high forbidden bandwidth, it is preferable that absorbed layer 33 is TiO2 film.
To prevent mirror unit region from having the not reflected direct injection of light, also need to control two neighboring reflecting mirror 3 it
Between distance.As shown in figure 3, the height of reflecting mirror 3 and the thickness of mask plate are identical in echo area 2, and it is height H, it is incident
The angle of light light and 3 outermost reflector 31 of reflecting mirror is θ, for two neighboring reflecting mirror 3, the absorbed layer 33 of a reflecting mirror
Surface to the linear distance between 31 surface of the reflecting layer of another adjacent reflecting mirror be D.
Wherein, the relationship between distance D, height H and angle theta：
As shown in Fig. 4 (a), as D < H*tan θ, incident ray is by 3 end of reflecting mirror respectively there are light loss at two
The light 42 in face and the light 41 for passing through 3 back side secondary reflection of adjacent mirror.The secondary reflection of light 41 will cause veiling glare generation.
It is at this time optimum state as D=H*tan θ as shown in Fig. 4 (b), there is only light losses at one for incident ray, i.e.,
It can be lost by the light 42 of 3 end face of reflecting mirror.
As shown in Fig. 4 (c), as D > H*tan θ, there is portions incident light 43 directly to reach substrate without reflecting mirror 3
Surface forms veiling glare and generates, and is not available the mask plate at this time and carries out allocating process.
Since the back side of reflecting mirror 3 of the invention is provided with absorbed layer 33, absorbed layer 33 can prevent light 41 from passing through
It crosses secondary reflection and forms veiling glare, to avoid influencing outgoing light direction.Therefore, between distance D, height H and angle theta three
Relationship should be D≤H*tan θ, preferably D=H*tan θ.
Specifically, it is carried out in light process of alignment to substrate, the incident direction of ultraviolet light 4 and the angle on 10 surface of mask plate
Be 30 °, due to reflecting mirror 3 be it is vertically disposed, the folder of the incident direction of ultraviolet light 4 and 3 outermost reflector 31 of reflecting mirror
Angle θ is 60 °.Again since mask plate is with a thickness of 3 millimeters, the height H of reflecting mirror 3 is also 3 millimeters, then between two reflecting mirrors 3
D≤3*tan60 ° of distance, it is preferable that consider actual process error, take 33 surface of absorbed layer of previous reflecting mirror to adjacent
The latter reflecting mirror 31 surface of reflecting layer between linear distance D=5.19 ± 0.005 millimeter.
As shown in Figure 3 and Figure 5, since the material of transparent area 2 is transparency silica glass or transparent resin, in order to guarantee light transmission
Area 1 is equal with the light energy of the emergent light of echo area 2, and the light transmission capacity to transparent area 1 is needed to make some technique adjustments, increases and weakens
The measure of light quantity, optionally having reduces transparent area transparency or setting unit lightproof area.Preferably embodiment, in order to
Keep the light transmission capacity of transparent area 1 suitable with the reflection light quantity of echo area 2, blocking portion be set in the light emission side of transparent area 1, it is preferable that
Ultraviolet light Protective film is set to form barrier bed 5 in the ultraviolet light-emitting face of transparent area 1.Barrier bed 5 is equally taken at equal intervals
Setting, and barrier bed 5 is corresponding with reflecting mirror 3 and barrier bed 5 is arranged in parallel, shading-area and the reflecting mirror 3 of barrier bed 5
Cross-sectional area is equal, as shown in Figure 5.Barrier bed 5 can be using ultraviolet resistance metal or the lightproof material of metal oxide material
Material, preferably barrier bed 5 is Cr film.It should be noted that, although the cross-sectional sizes phase of the barrier bed 5 of transparent area 1 and reflecting mirror 3
Together, but transparent area 1 and the light exposure of echo area 2 are not fully consistent, but within the scope of allowable error, therefore have no effect on reality
Exposure quality.To guarantee that light exposure is completely the same, then barrier bed 5 need to expand, and width need to expand 5.1961 (≈ 3*
Tan60 °) -5.19=0.0061mm, consider fabrication error, which can be ignored.
During carrying out light orientation to substrate using mask plate 10, when ultraviolet light 4 enters the transparent area 1 of mask plate 10
When, light is directly projected to from the transparent part of transparent area 1 up to substrate surface, and radiation direction remains unchanged, with former incident angle
Direction reaches substrate surface, meanwhile, part ultraviolet light 4 is stopped by the barrier bed 5 of transparent area 1, can not reach substrate surface；Work as purple
When outer light 4 enters the echo area 2 of mask plate 10, by the ultraviolet light 4 between two neighboring reflecting mirror 3 by the reflection of reflecting mirror 3
Substrate surface is reached after 31 reflection of layer, the incident direction of the radiation direction after reflection and ultraviolet light 4 is symmetrical in mirror surface, meanwhile, portion
Ultraviolet light 4 is divided to be absorbed by the absorbed layer 33 of adjacent mirror 3 by the reflection of reflecting mirror 3, substrate surface can not be reached, thus
Guarantee the consistency of outgoing light direction.As shown in figure 4, arrow represents radiation direction, by the ultraviolet light 4 and warp of transparent area 1
The radiation direction for crossing the ultraviolet light 4 of echo area 2 is symmetrical in mirror surface, to realize the purpose of simultaneously bi-directionally light orientation.
In the present embodiment, it by setting transparent area 1 and echo area 2, can be carried out simultaneously using one piece of mask plate 10
Bi-directional light orientation, and due to the effect of barrier bed 5, the exposure energy of bi-directional light orientation is consistent.
In another embodiment, it in order to guarantee that transparent area 1 is equal with the light energy of the emergent light of echo area 2, can reduce
The transparency of transparent area 1, no setting is required barrier bed 5.Transparent area 1 is passed through by reducing transparency, the light for reducing ultraviolet light 4
Amount, can also guarantee equal with the amount light of echo area 2 by transparent area 1.
In another embodiment, it in order to guarantee that transparent area 1 is equal with the light energy of the emergent light of echo area 2, can reduce
The transparency of transparent area 1, while also setting up barrier bed 5.
By the present invention in that with a mask plate, providing bidirectional optical path carries out light orientation to substrate simultaneously, improves ultraviolet light
Utilization rate, reduce equipment light illuminating unit, while shortening the processing time of light orientation, greatly improve production efficiency,
Greatly reduce production cost.
It should be noted that the above is only a preferred embodiment of the present invention, but the present invention is not limited to above-mentioned
Detail in embodiment, it is noted that for those skilled in the art, in technology of the invention
In conception range, various improvements and modifications may be made without departing from the principle of the present invention, to technology of the invention
Scheme carries out a variety of equivalents, these are improved, retouching and equivalents also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of mask plate for substrate light orientation, which is characterized in that the transparent area being arranged alternately including repetition and echo area,
The echo area includes at least one vertically disposed reflecting mirror, is arrived by the light of the transparent area with former incident angle direction
Up to substrate surface, substrate surface is reached after reflecting mirror reflection by the light of the echo area.
2. mask plate according to claim 1, which is characterized in that the transparent area and the width of echo area are equal, light
The radiation direction of substrate surface is reached from transparent area and reaches the radiation direction of substrate surface in mirror symmetry from echo area.
3. mask plate according to claim 1, which is characterized in that the reflecting mirror includes reflecting layer, basal layer and suction
Layer is received, wherein the reflecting layer is towards light incident direction.
4. mask plate according to claim 1, which is characterized in that multiple reflecting mirrors are equally spaced in a column direction to be embedded in
The inside of echo area, the distance between absorption layer surface of a reflecting mirror to the reflection layer surface of its adjacent mirror are D, and
D≤H*tan θ, wherein H is the higher mirror, and θ is the angle of incident ray and the reflecting mirror.
5. mask plate according to claim 1, which is characterized in that the transparent area further includes the blocking positioned at light emission side
Portion.
6. mask plate according to claim 5, which is characterized in that correspondence is set side by side for the blocking portion and the reflecting mirror
It sets.
7. the method for a kind of pair of substrate progress light orientation, which is characterized in that using the transparent area that there is repetition to be arranged alternately and instead
The mask plate in area is penetrated, the echo area includes at least one vertically disposed reflecting mirror, by the light of the transparent area with original
Incident angle direction reaches substrate surface, reaches substrate table after mirror mirror reflection by the light of the echo area
Face.
8. the method according to the description of claim 7 is characterized in that the mirror absorption part is reflected by adjacent mirror
Light.
9. the method according to the description of claim 7 is characterized in that the transparent area stop portions light passes through.
10. the method according to the description of claim 7 is characterized in that passing through the radiation direction pair of the transparent area and echo area
Claim and amount light is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810504443.2A CN108873486B (en) | 2018-05-24 | 2018-05-24 | Mask plate for substrate photo-alignment and photo-alignment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810504443.2A CN108873486B (en) | 2018-05-24 | 2018-05-24 | Mask plate for substrate photo-alignment and photo-alignment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108873486A true CN108873486A (en) | 2018-11-23 |
| CN108873486B CN108873486B (en) | 2020-11-27 |
Family
ID=64332966
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810504443.2A Expired - Fee Related CN108873486B (en) | 2018-05-24 | 2018-05-24 | Mask plate for substrate photo-alignment and photo-alignment method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108873486B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050062920A1 (en) * | 2002-01-28 | 2005-03-24 | International Business Machines Corporation | Multi-domain low twist angle liquid crystal cells and methods of production thereof |
| JP2011053584A (en) * | 2009-09-04 | 2011-03-17 | Seiko Epson Corp | Light irradiating device |
| CN102741746A (en) * | 2010-03-12 | 2012-10-17 | 夏普株式会社 | Photomask, exposure device, and method for producing liquid crystal display panel |
| CN103033988A (en) * | 2011-09-30 | 2013-04-10 | 群康科技(深圳)有限公司 | Optical alignment device of alignment film and manufacturing method of alignment film |
| CN105259710A (en) * | 2015-11-12 | 2016-01-20 | 深圳市华星光电技术有限公司 | Optical alignment photomask |
-
2018
- 2018-05-24 CN CN201810504443.2A patent/CN108873486B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050062920A1 (en) * | 2002-01-28 | 2005-03-24 | International Business Machines Corporation | Multi-domain low twist angle liquid crystal cells and methods of production thereof |
| JP2011053584A (en) * | 2009-09-04 | 2011-03-17 | Seiko Epson Corp | Light irradiating device |
| CN102741746A (en) * | 2010-03-12 | 2012-10-17 | 夏普株式会社 | Photomask, exposure device, and method for producing liquid crystal display panel |
| CN103033988A (en) * | 2011-09-30 | 2013-04-10 | 群康科技(深圳)有限公司 | Optical alignment device of alignment film and manufacturing method of alignment film |
| CN105259710A (en) * | 2015-11-12 | 2016-01-20 | 深圳市华星光电技术有限公司 | Optical alignment photomask |
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| Publication number | Publication date |
|---|---|
| CN108873486B (en) | 2020-11-27 |
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