CN108859349A - A kind of diaphragm and cover board of low transmission - Google Patents
A kind of diaphragm and cover board of low transmission Download PDFInfo
- Publication number
- CN108859349A CN108859349A CN201810480575.6A CN201810480575A CN108859349A CN 108859349 A CN108859349 A CN 108859349A CN 201810480575 A CN201810480575 A CN 201810480575A CN 108859349 A CN108859349 A CN 108859349A
- Authority
- CN
- China
- Prior art keywords
- oxide layer
- diaphragm
- silicon oxide
- substrate
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/16—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer formed of particles, e.g. chips, powder or granules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
- B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/02—Synthetic macromolecular particles
- B32B2264/0214—Particles made of materials belonging to B32B27/00
- B32B2264/025—Acrylic resin particles, e.g. polymethyl methacrylate or ethylene-acrylate copolymers
Abstract
The invention discloses a kind of diaphragm of low transmission and cover board, the diaphragm includes substrate, has opposite the first face and the second face;PMMA particle is covered on first face of the substrate;Second face of the substrate is equipped with semi-transparent film plating layer, and the transmitance of the semi-transparent film plating layer is 40-60%.The transmitance of diaphragm provided by the invention is low, and 550nm m wave band transmitance reaches 20-40%, can be used for after cover board posts reaching preferable integrated display effect, has the advantages that thickness is thin, uniform in effect.
Description
Technical field
The present invention relates to electronic product accessory technical fields, more particularly to the diaphragm and cover board of a kind of low transmission.
Background technique
Transmitance in the prior art for the diaphragm of cover board is excessively high, and the thickness of diaphragm is excessive, and display effect is uneven.Face
To consumer's increasingly higher demands, when many producers cater to environment, energy conservation constantly seeking technological innovation and function innovation
While with the development trend of differentiation, many designers have turned one's attention to the design in cover board.
Summary of the invention
In order to make up the defect of prior art, the present invention provides the diaphragm and cover board of a kind of low transmission.
The technical problems to be solved by the invention are achieved by the following technical programs:
A kind of diaphragm of low transmission, including substrate have opposite the first face and the second face;It is covered on first face of the substrate
It is stamped PMMA particle;Second face of the substrate is equipped with semi-transparent film plating layer, and the transmitance of the semi-transparent film plating layer is 40-60%.
Further, the material of the substrate is PET or PC.
Further, the substrate with a thickness of 20-200 microns.
Further, the partial size of the PMMA particle is 10-200 microns.
Further, the semi-transparent film plating layer is by multilayer titanium oxide layer and multilayer silicon oxide layer is alternately laminated forms.
Further, the semi-transparent film plating layer is made of eight tunics, be followed successively by the first titanium oxide layer, the first silicon oxide layer,
Second titanium oxide layer, the second silicon oxide layer, third titanium oxide layer, third silicon oxide layer, the 4th titanium oxide layer, the 4th silica
Layer.
Further, first titanium oxide layer, the first silicon oxide layer, the second titanium oxide layer, the second silicon oxide layer, third
Titanium oxide layer, third silicon oxide layer, the 4th titanium oxide layer, the 4th silicon oxide layer thickness be respectively:60-150nm,40-80nm,
40-80nm 、30-80nm 、80-150nm、10-40nm、80-140nm、60-100nm。
Further, being in contact with the second face of the substrate is silicon oxide layer.
The present invention also provides a kind of cover board, the outer surface of the cover board, which is sticked, above-mentioned diaphragm.
The present invention has the advantages that:
The transmitance of diaphragm provided by the invention is low, and 550nm m wave band transmitance reaches 20-40%, can be used for after cover board posts
Reach preferable integrated display effect, has the advantages that thickness is thin, uniform in effect.
Specific embodiment
The present invention will now be described in detail with reference to examples, and the examples are only preferred embodiments of the present invention,
It is not limitation of the invention.
In the description of the present invention, it is to be understood that, term " first ", " second " are used for description purposes only, and cannot
It is interpreted as indication or suggestion relative importance or implicitly indicates the quantity of indicated technical characteristic.Define as a result, " the
One ", the feature of " second " can explicitly or implicitly include one or more feature.In description of the invention
In, the meaning of " plurality " is two or more, unless otherwise specifically defined.
Embodiment 1
A kind of diaphragm of low transmission, including substrate have opposite the first face and the second face.
In the present invention, the substrate is plastic rubber substrate, preferably, the material of the substrate is PET or PC.The present invention
In, the thickness of the substrate is preferably 20-200 microns, but not limited to this.
PMMA particle is covered on first face of the substrate.The partial size of the PMMA particle is 10-200 microns.
Second face of the substrate is equipped with semi-transparent film plating layer, and the transmitance of the semi-transparent film plating layer is 40-60%.Specifically
Ground, the semi-transparent film plating layer is by multilayer titanium oxide layer and multilayer silicon oxide layer is alternately laminated forms.
In the present invention, multilayer titanium oxide layer and multilayer silicon oxide layer are alternately laminated, make compression coating materials and tensile stress coating materials
It is arranged alternately, to keep semi-transparent film plating layer overall inner-stress minimum, improves the stability of semi-transparent film plating layer, reach and improve film layer jail
The effect of soundness.
The present invention does not limit the number of plies of titanium oxide layer and the number of plies of silica, and the number of plies of titanium oxide can be with the layer of silica
Number is identical, and the number of plies of titanium oxide can also be not identical as the number of plies of silica, as long as forming cross layered structure, preferably
Ground, the number of plies of the titanium oxide layer are identical as the number of plies of the silicon oxide layer.
Preferably, the semi-transparent film plating layer is made of eight tunics, is followed successively by the first titanium oxide layer, the first silicon oxide layer,
Titanium dioxide layer, the second silicon oxide layer, third titanium oxide layer, third silicon oxide layer, the 4th titanium oxide layer, the 4th silicon oxide layer,
Wherein first titanium oxide layer, the first silicon oxide layer, the second titanium oxide layer, the second silicon oxide layer, third titanium oxide layer, third
Silicon oxide layer, the 4th titanium oxide layer, the 4th silicon oxide layer thickness be respectively:60-150nm,40-80nm,40-80nm ,30-
80nm 、80-150nm、10-40nm、80-140nm、60-100nm。
It should be noted that the semi-transparent film plating layer can according to need the number of plies and thickness to select each layer, here eight
Tunic is preferred embodiment, can be realized preferable effect, but and do not constitute a limitation, other numbers of plies and thickness can also be used
Degree.
This semi-transparent film plating layer can have different transmitances because of the number of plies of each layer and the difference of respective thickness, the present invention
By rationally designing to semi-transparent film plating layer, titanium oxide layer and silicon oxide layer intersecting are set, and by controlling each layer
The number of plies and thickness so that the transmitance of semi-transparent film plating layer reaches 40-60%.On this semi-transparent film plating layer and the first face of substrate
After the collocation of PMMA particle, synergistic effect, so that the transmitance of resulting diaphragm is low, 550nm m wave band transmitance reaches 20-40%,
And this diaphragm compared with traditional diaphragm for after cover board, having the advantages that thickness is thin, uniform in effect.
The overlay order of titanium oxide layer and silicon oxide layer on the second face of substrate is not limited in the embodiment of the present invention yet, with
What the second face of the substrate was in contact can be silicon oxide layer, or titanium oxide layer.Preferably, with the of the substrate
It is silicon oxide layer that two faces, which are in contact, to improve the adhesive force of semi-transparent film plating layer.
In the present invention, the forming method of semi-transparent film plating layer is not limited, it as an example, can be using magnetron sputtering, evaporation
At least one of plated film, ion film plating, but not limited thereto.
Embodiment 2
A kind of cover board, the outer surface of the cover board are sticked the diaphragm having in embodiment 1.
Embodiments of the present invention above described embodiment only expresses, the description thereof is more specific and detailed, but can not
Therefore limitations on the scope of the patent of the present invention are interpreted as, as long as skill obtained in the form of equivalent substitutions or equivalent transformations
Art scheme should all be fallen within the scope and spirit of the invention.
Claims (9)
1. a kind of diaphragm of low transmission, including substrate have opposite the first face and the second face;On first face of the substrate
It is covered with PMMA particle;Second face of the substrate is equipped with semi-transparent film plating layer, and the transmitance of the semi-transparent film plating layer is 40-
60%。
2. diaphragm as described in claim 1, which is characterized in that the material of the substrate is PET or PC.
3. diaphragm as described in claim 1, which is characterized in that the substrate with a thickness of 20-200 microns.
4. diaphragm as described in claim 1, which is characterized in that the partial size of the PMMA particle is 10-200 microns.
5. diaphragm as described in claim 1, which is characterized in that the semi-transparent film plating layer is aoxidized by multilayer titanium oxide layer and multilayer
Silicon layer is alternately laminated to be formed.
6. diaphragm as claimed in claim 5, which is characterized in that the semi-transparent film plating layer is made of eight tunics, is followed successively by first
Titanium oxide layer, the first silicon oxide layer, the second titanium oxide layer, the second silicon oxide layer, third titanium oxide layer, third silicon oxide layer,
Four titanium oxide layers, the 4th silicon oxide layer.
7. diaphragm as claimed in claim 6, which is characterized in that first titanium oxide layer, the first silicon oxide layer, the second oxidation
Titanium layer, the second silicon oxide layer, third titanium oxide layer, third silicon oxide layer, the 4th titanium oxide layer, the 4th silicon oxide layer thickness point
It is not:60-150nm,40-80nm,40-80nm ,30-80nm ,80-150nm,10-40nm,80-140nm,60-100nm.
8. diaphragm as claimed in claim 5, which is characterized in that being in contact with the second face of the substrate is silicon oxide layer.
9. a kind of cover board, the outer surface of the cover board, which is sticked, has the right to require the described in any item diaphragms of 1-8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810480575.6A CN108859349A (en) | 2018-05-18 | 2018-05-18 | A kind of diaphragm and cover board of low transmission |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810480575.6A CN108859349A (en) | 2018-05-18 | 2018-05-18 | A kind of diaphragm and cover board of low transmission |
Publications (1)
Publication Number | Publication Date |
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CN108859349A true CN108859349A (en) | 2018-11-23 |
Family
ID=64333904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201810480575.6A Pending CN108859349A (en) | 2018-05-18 | 2018-05-18 | A kind of diaphragm and cover board of low transmission |
Country Status (1)
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CN (1) | CN108859349A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022068939A1 (en) * | 2020-09-30 | 2022-04-07 | 深圳市晶相技术有限公司 | Semiconductor structure and application thereof |
Citations (6)
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CN101610649A (en) * | 2008-06-20 | 2009-12-23 | 深圳富泰宏精密工业有限公司 | Shell and manufacture method thereof |
CN101615093A (en) * | 2009-07-29 | 2009-12-30 | 深圳莱宝高科技股份有限公司 | A kind of touch-screen and manufacture method thereof of taking into account reflection and seeing through effect |
CN101652035A (en) * | 2008-08-13 | 2010-02-17 | 深圳富泰宏精密工业有限公司 | Portable electronic device shell |
CN103472955A (en) * | 2013-09-27 | 2013-12-25 | 苏州胜利光学玻璃有限公司 | Anti-reflection touch screen |
CN105818509A (en) * | 2016-03-17 | 2016-08-03 | 浙江兆奕科技有限公司 | Glass bead film, shell using same, and manufacturing technology of shell |
CN107992234A (en) * | 2017-12-29 | 2018-05-04 | 东莞北斗同创智能科技有限公司 | A kind of intelligence wearing touch-screen and its semi-transparent ito film layer manufacturing method thereof |
-
2018
- 2018-05-18 CN CN201810480575.6A patent/CN108859349A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101610649A (en) * | 2008-06-20 | 2009-12-23 | 深圳富泰宏精密工业有限公司 | Shell and manufacture method thereof |
CN101652035A (en) * | 2008-08-13 | 2010-02-17 | 深圳富泰宏精密工业有限公司 | Portable electronic device shell |
CN101615093A (en) * | 2009-07-29 | 2009-12-30 | 深圳莱宝高科技股份有限公司 | A kind of touch-screen and manufacture method thereof of taking into account reflection and seeing through effect |
CN103472955A (en) * | 2013-09-27 | 2013-12-25 | 苏州胜利光学玻璃有限公司 | Anti-reflection touch screen |
CN105818509A (en) * | 2016-03-17 | 2016-08-03 | 浙江兆奕科技有限公司 | Glass bead film, shell using same, and manufacturing technology of shell |
CN107992234A (en) * | 2017-12-29 | 2018-05-04 | 东莞北斗同创智能科技有限公司 | A kind of intelligence wearing touch-screen and its semi-transparent ito film layer manufacturing method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2022068939A1 (en) * | 2020-09-30 | 2022-04-07 | 深圳市晶相技术有限公司 | Semiconductor structure and application thereof |
TWI823150B (en) * | 2020-09-30 | 2023-11-21 | 大陸商深圳市晶相技術有限公司 | A semiconductor structure and an application thereof |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181123 |
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RJ01 | Rejection of invention patent application after publication |