CN108847192A - A kind of gated sweep driving circuit and display device - Google Patents
A kind of gated sweep driving circuit and display device Download PDFInfo
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- CN108847192A CN108847192A CN201810539855.XA CN201810539855A CN108847192A CN 108847192 A CN108847192 A CN 108847192A CN 201810539855 A CN201810539855 A CN 201810539855A CN 108847192 A CN108847192 A CN 108847192A
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- 230000005611 electricity Effects 0.000 claims description 12
- 238000010408 sweeping Methods 0.000 claims description 6
- 239000013642 negative control Substances 0.000 claims description 4
- 239000013641 positive control Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 7
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- 230000002146 bilateral effect Effects 0.000 description 4
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- 239000004973 liquid crystal related substance Substances 0.000 description 4
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
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Abstract
The invention discloses a kind of gated sweep driving circuits, including N (N>4) stage drive circuit unit；N-th (1≤n≤N, and n, N are positive integer) stage drive circuit unit includes memory compensation module, and memory compensation module includes compensation submodule and secondary memory submodule；The information of voltage for pulling up control node duplication is passed into memory compensation node in touch detection last stage memory compensation module, secondary memory submodule opening makes touch-control control signal input secondary memory node；The voltage for pulling up control node is set to be pulled to second stage voltage in the touch detection stage；The stage will pull up the voltage high of control node to first stage voltage after touch detection；All grades of the touch detection stage of pull-up control node maintains low potential, and elimination stops cheating band；Do not include capacitor in memory compensation module, is conducive to reduce domain area occupied；The invention also discloses the display devices including the gated sweep driving circuit.
Description
Technical field
The present invention relates to field of liquid crystal display more particularly to a kind of gated sweep drivings for embedded touch display screen
Circuit and display device.
Background technique
In recent years, the gated sweep driving circuit in liquid crystal display (Gate Driver Monolithic, GDM) is gradually
It is technically integrated in liquid crystal display panel using the realization of existing thin film transistor (TFT) processing procedure, can both reduce manufacturing cost in this way,
Left and right side frame size can also be reduced in design.In small-size display application, in order to meet the need of different clients application
It asks, the function that forward scan and reverse scan can be supported to switch is generally required in the design of gated sweep driving circuit.
It is a kind of circuit diagram of the gated sweep driving circuit of existing embedded touch display screen shown in Fig. 1, it should
Gated sweep driving circuit include it is positive and negative sweep control module 01, pull-up module 02, touch-control supplementary module 03, maintain supplementary module 04
And first capacitor C1.The scanning direction of the gated sweep driving circuit controls signal U2D and reverse scan by forward scan
The constant voltage signal of this pair of mutually reverse phase of control signal D2U is controlled, and is carried out certainly when U2D takes high level, D2U takes low level
Forward scan under above, on the contrary carry out reverse scan, i.e., it is realized by controlling the state of two thin film transistor (TFT)s of M1 and M9
Switch the function in different scanning direction.
In small size display screen, touch function is integrated into display and has become a kind of technological trend, so both
Cost can be saved, the integral thickness of display can also be thinned, but higher technology also is proposed to panel design simultaneously
It is required that.It is a kind of driving method schematic diagram of embedded touch display screen as shown in Figure 2, i.e., is divided into original frame picture
Multiple blocks, then picture (Display) input signal Touch is suspended between block, carries out touch detection.It is right in this way
For gated sweep driving circuit, in order to meet touch detection, needs to suspend output grid in touch detection stage circuit and sweep
Signal Gn is retouched, then can also normally be started after touch-control, continues sequentially to export gated sweep signal Gn.
As shown in figure 3, the normal grade (grade that touch-control pause does not occur) and generation touch-control of gated sweep driving circuit are temporary
The drive waveforms of the particular stage stopped, pull-up control node netAn have notable difference, after long-time operation, will lead to the two
The tenth thin film transistor (TFT) M10 in different stage drive circuit units generates different threshold voltage shift amounts, then generates different
Gated sweep signal output, eventually lead to touch-control time-out position formation stop cheat band, i.e., in the same of touch-control time-out position
Occurs blackstreak on horizontal line.
In addition, U2D keeps high potential, prime gated sweep Chief Signal Boatswain when display is chronically at forward scanning state
Phase is in low potential, and M1 can bear the negative bias action of compressive stress of long period, will lead to the threshold voltage negative sense drift of element in this way
It moves, eventually results in M1 element error and open so that circuit function fails.Equally, can also exist when being chronically at reverse scan same
The problem of sample.This unstability is also related to device itself, will appear apparent function in oxide thin film transistor application
Property is bad.Circuit generates functional bad when this negative sense drift also results in switched scan direction.
On the other hand, by increasing, additional forward scan controls signal U2D, reverse scan controls signal D2U and list
Side gated sweep driving circuit realized using two enabling signal GSP1 and GSP3 it is positive and negative sweep function both and reduce circuit can
By property, the complexity of circuit is also increased.
Summary of the invention
It, can be to avoid in order to solve the above technical problems, the present invention provides a kind of gated sweep driving circuit and display device
The touch-control time-out position as caused by the threshold voltage shift of thin film transistor (TFT) stops hole band, improves the reliability of circuit.
Technical solution provided by the invention is as follows：
The invention discloses a kind of gated sweep driving circuits, including N (N>4, and N is positive integer) stage drive circuit list
Member；N-th (1≤n≤N, and n is positive integer) stage drive circuit unit includes that positive and negative control module, pull-up module, the touch-control swept assists
Module maintains supplementary module and memory compensation module, and the memory compensation module includes compensation submodule and secondary memory
Module；Secondary memory submodule connection memory compensation node and secondary memory node, secondary memory submodule input touch-control control
Signal；Submodule connection pull-up control node and secondary memory node are compensated, compensation submodule inputs touch-control enabling signal；
The positive and negative of n-th stage drive circuit unit sweeps control module, pull-up module, maintains supplementary module and memory compensation mould
Block is connected to pull-up control node；The positive and negative of n-th stage drive circuit unit sweeps control module, touch-control supplementary module and maintenance
Supplementary module inputs constant pressure low level；The pull-up module and touch-control supplementary module of n-th stage drive circuit unit are connected to n-th
The gated sweep signal wire of stage drive circuit unit；Gated sweep signal wire exports gated sweep signal；
The information of voltage for pulling up control node duplication memory is passed in touch detection last stage memory compensation module to mend
Node is repaid, secondary memory submodule opening makes touch-control control signal input secondary memory node, makes the voltage of secondary memory node
It is increased to secondary memory voltage, compensation submodule opening makes touch-control enabling signal input pull-up control node；
Make to pull up the voltage of control node in touch detection stage memory compensation module by first stage voltage drop down to the
Two-stage voltage；
Stage memory compensation module will pull up the voltage high of control node to first stage voltage after touch detection.
Preferably, the memory compensation module of the n-th stage drive circuit unit further include memory submodule, drop-down submodule and
Node control submodule；Memory submodule, secondary memory submodule, drop-down submodule and node control submodule are connected to note
Recall compensation node, compensates submodule and secondary memory submodule is connected to secondary memory node, compensation submodule and memory
Module connects the pull-up control node of the n-th stage drive circuit unit, and node control submodule and maintenance supplementary module are connected to n-th
Grade maintains control node；
The voltage of control node will be pulled up by first stage voltage pull-down to second in the touch detection stage by compensating submodule
Stage voltage, the stage will pull up the voltage high of control node to first stage voltage after touch detection；
The information of voltage for pulling up control node duplication is passed to memory compensation in the touch detection last stage by memory submodule
Node；
Secondary memory submodule is opened in the touch detection last stage makes touch-control control signal input secondary memory node, by two
The voltage of secondary memory node is raised to secondary memory voltage；
Pulling down submodule stage after touch detection by the voltage of memory compensation node is pulled low to the by the second memory voltage
One memory voltage, and maintain the current potential of memory compensation node；
Node control submodule controls n-th grade of maintenance when memory compensation node is in the second memory voltage of high level
The voltage pull-down of node is to low level.
Preferably, the compensation submodule includes first film transistor, the control terminal connection two of first film transistor
Secondary memory node, the two paths end of first film transistor are separately connected pull-up control node and input touch-control enabling signal；
The memory submodule includes the 4th thin film transistor (TFT), the control terminal and the 4th film crystal of the 4th thin film transistor (TFT)
First path terminal of pipe is shorted and connects pull-up control node, and the alternate path end of the 4th thin film transistor (TFT) connects memory compensation section
Point；
The secondary memory submodule includes the 15th thin film transistor (TFT), and the control terminal of the 15th thin film transistor (TFT) connects dimension
Control node is held, the two paths end of the 15th thin film transistor (TFT) is separately connected secondary memory node and input touch-control control letter
Number；
The node control submodule includes the 16th thin film transistor (TFT), and the control terminal of the 16th thin film transistor (TFT) connects note
Recall compensation node, the two paths end of the 16th thin film transistor (TFT), which is separately connected, maintains submodule and input constant pressure low level；
The drop-down submodule includes the 18th thin film transistor (TFT), when the control terminal of the 18th thin film transistor (TFT) inputs second
Clock signal, the two paths end of the 18th thin film transistor (TFT) are separately connected memory compensation node and input constant pressure low level.
Preferably, the maintenance supplementary module includes maintaining submodule and emptying submodule, maintain submodule and empty son
Module and the memory compensation module are connected to maintenance control node；
The maintenance submodule connection pull-up control node of n-th stage drive circuit unit simultaneously inputs constant pressure low level and constant pressure height
Level；Maintain submodule to maintain control node charge and discharge and to pull-up control node and gated sweep signal wire into
Row maintains；
Empty submodule, pull-up module and the touch-control supplementary module of n-th stage drive circuit unit are connected to n-th grade of driving electricity
The gated sweep signal wire of road unit empties submodule and controls in every frame end and switching on and shutting down pull-up control node, maintenance
Node carries out charge and empties.
Preferably, the maintenance submodule of the n-th stage drive circuit unit includes the 5th thin film transistor (TFT), the 6th film crystal
Pipe, the 8th thin film transistor (TFT), the 11st thin film transistor (TFT), the 12nd thin film transistor (TFT), the 13rd thin film transistor (TFT) and the tenth
Seven thin film transistor (TFT)s；
The control terminal of 5th thin film transistor (TFT) and the first path terminal of the 5th thin film transistor (TFT) are shorted and input the high electricity of constant pressure
Flat, the alternate path end connection of the 5th thin film transistor (TFT) maintains control node；
The control terminal connection pull-up control node of 6th thin film transistor (TFT), the two paths end difference of the 6th thin film transistor (TFT)
Connection maintains control node and input constant pressure low level；
The control terminal connection of 8th thin film transistor (TFT) maintains control node, the two paths end difference of the 8th thin film transistor (TFT)
Connection pull-up control node and input constant pressure low level；
The control terminal of 11st thin film transistor (TFT) inputs prime gated sweep signal, and two of the 11st thin film transistor (TFT) are logical
Terminal, which is separately connected, maintains control node and input constant pressure low level；
The control terminal of 12nd thin film transistor (TFT) inputs rear class gated sweep signal, and two of the 12nd thin film transistor (TFT) are logical
Terminal, which is separately connected, maintains control node and input constant pressure low level；
The control terminal connection of 13rd thin film transistor (TFT) maintains control node, the two paths end of the 13rd thin film transistor (TFT)
It is separately connected gated sweep signal wire and input constant pressure low level；
The control terminal of 17th thin film transistor (TFT) connects memory compensation node, the two paths end of the 17th thin film transistor (TFT)
It is separately connected and maintains control node and input constant pressure low level.
Preferably, the submodule that empties of the n-th stage drive circuit unit includes the second thin film transistor (TFT) and third film crystal
Pipe；
The control terminal input of second thin film transistor (TFT) empties reset signal, the two paths end difference of the second thin film transistor (TFT)
Connection pull-up control node and input constant pressure low level；
The control terminal input of third thin film transistor (TFT) empties reset signal, the two paths end difference of third thin film transistor (TFT)
Connection maintains control node and input constant pressure low level.
Preferably, the positive and negative control module of sweeping of the n-th stage drive circuit unit includes the 7th thin film transistor (TFT), the 9th film crystalline substance
Body pipe and the 15th thin film transistor (TFT)；
The control terminal of 7th thin film transistor (TFT) and the first path terminal of the 7th thin film transistor (TFT) are shorted and input the first control
Signal, the alternate path end connection pull-up control node of the 7th thin film transistor (TFT)；
The control terminal of 9th thin film transistor (TFT) and the first path terminal of the 9th thin film transistor (TFT) are shorted and input the second control
Signal, the alternate path end connection pull-up control node of the 9th thin film transistor (TFT)；
The control terminal of 15th thin film transistor (TFT) inputs second clock signal, the two paths end of the 15th thin film transistor (TFT)
It is separately connected pull-up control node and input constant pressure low level.
Preferably, headed by the n-th stage drive circuit unit when stage drive circuit unit, the first control signal is
First enabling signal；When the n-th stage drive circuit unit not headed by stage drive circuit unit when, the first control signal is
The gated sweep signal of pre-driver circuitry unit；
When the n-th stage drive circuit unit is tail stage drive circuit unit, the second control signal opens for first
Dynamic signal；When the n-th stage drive circuit unit is not tail stage drive circuit unit, the second control signal is rear class drive
The gated sweep signal of dynamic circuit unit.
Preferably, the touch-control supplementary module of the n-th stage drive circuit unit includes the 14th thin film transistor (TFT), the 14th film
The control terminal input touch-control of transistor controls signal, and the two paths end of the 14th thin film transistor (TFT) is separately connected n-th grade of driving
The gated sweep signal wire and input constant pressure low level of circuit unit.
The invention also discloses a kind of display device, any one of which includes above-mentioned gated sweep driving electricity
Road.
Compared with prior art, the present invention can bring at least one of following beneficial effect：
1, all grades of the touch detection stage of pull-up control node maintains low potential, eliminates film crystal in pull-up module
Stop to cheat band caused by pipe characteristic drift is different；
2, do not include capacitor in memory compensation module, be conducive to reduce domain area occupied；
3, positive and negative to sweep two thin film transistor (TFT)s use that first control signal and second control signal are received in control module
The grid connection that source electrode are shorted, avoids circuit malfunction caused by threshold voltage shift；
4, using existing signal realize it is positive and negative sweep function and single-sided gate scan drive circuit only needs an enabling signal,
Be conducive to the frame of constriction display panel.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, the present invention is given furtherly
It is bright.
Fig. 1 is a kind of circuit diagram of the gated sweep driving circuit of existing embedded touch display screen；
Fig. 2 is the driving method schematic diagram of gated sweep driving circuit shown in Fig. 1；
Fig. 3 is the normal grade of gated sweep driving circuit shown in Fig. 1 and the pull-up control that the particular stage that touch-control suspends occurs
The drive waveforms schematic diagram of node；
Fig. 4 is the configuration diagram of gated sweep driving circuit one embodiment of the present invention；
Fig. 5 is the schematic diagram that gated sweep driving circuit or so alternating expression drives framework；
Fig. 6 is the configuration diagram of memory compensation module one embodiment in circuit shown in Fig. 4；
Fig. 7 is the circuit diagram of the embodiment one of gated sweep driving circuit of the present invention；
Fig. 8 is the drive waveforms schematic diagram that touch-control high level and touch-control control signal in circuit shown in Fig. 7；
Fig. 9 is the circuit diagram of the embodiment two of gated sweep driving circuit of the present invention；
Figure 10 is the drive waveforms schematic diagram that second enabling signal and touch-control control signal in circuit shown in Fig. 9；
Figure 11 is drive waveforms schematic diagram of the circuit shown in Fig. 9 in forward scan；
Figure 12 is drive waveforms schematic diagram of the circuit shown in Fig. 9 in reverse scan.
Drawing reference numeral explanation：
01, positive and negative to sweep control module, 02, pull-up module, 03, touch-control supplementary module, 04, maintenance supplementary module, 04A, dimension
Submodule is held, 04B, empties submodule, 05, memory compensation module, 05A, compensation submodule, 05B, memory submodule, 05C, two
Secondary memory submodule, 05D, drop-down submodule, 05E, node control submodule,
M1, first film transistor, M2, the second thin film transistor (TFT), M3, third thin film transistor (TFT), M4, the 4th film crystal
Pipe, M5, the 5th thin film transistor (TFT), M6, the 6th thin film transistor (TFT), M1A, the 7th thin film transistor (TFT), M8, the 8th thin film transistor (TFT),
M1B, the 9th thin film transistor (TFT), M10, the tenth thin film transistor (TFT), M6A, the 11st thin film transistor (TFT), M6B, the 12nd film crystal
Pipe, M6C, the 16th thin film transistor (TFT), M9A, the 17th thin film transistor (TFT), M9B, the 18th thin film transistor (TFT), C1, the first electricity
Hold；
The gated sweep signal of Gn, the n-th stage drive circuit unit, the pull-up control of netAn, the n-th stage drive circuit unit
Node, the maintenance control node of netBn, the n-th stage drive circuit unit, the memory compensation of netCn, the n-th stage drive circuit unit
Node, VGH1, constant pressure high level, VGH2, touch-control high level, VSS, constant pressure low level, CKm, the first clock signal, CKm+4,
Two clock signals, the gated sweep signal of Gn-2, the n-th -2 stage drive circuit unit, Gn+2, n-th+2 stage drive circuit unit
CLR1, gated sweep signal empties reset signal, GSP1, the first enabling signal, GSP2, the second enabling signal, TC1, touch-control control
Signal processed.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.Here, when first element to be described as " being electrically connected " to second element, first element can be with
It is connected directly to second element, or is indirectly connected to second element by one or more add ons.Further, in order to clear
Chu Qijian is concisely omitted for fully understanding the present invention and is not required certain elements.
Gated sweep driving circuit of the invention includes N (N>4, and N is positive integer) stage drive circuit unit, such as Fig. 4 institute
Show, n-th grade of (1≤n≤N, and n is positive integer) drive circuit unit includes positive and negative sweeping control module 01, pull-up module 02, touch-control
Supplementary module 03 maintains supplementary module 04 and memory compensation module 05.It is positive and negative to sweep control module 01, pull-up module 02, maintain
Supplementary module 04 and memory compensation module 05 are connected to pull-up control node netAn；It is positive and negative that sweep control module 01, touch-control auxiliary
It helps module 03 and supplementary module 04 is maintained to input constant pressure low level VSS；Pull-up module 02 is connected with touch-control supplementary module 03
In the same level gated sweep signal wire, gated sweep signal wire exports gated sweep signal Gn.
One frame time is divided into the stage after touch detection last stage, touch detection stage and touch detection.
As shown in fig. 6, memory compensation module 05 includes compensation submodule 05A and secondary memory submodule 05C；Secondary memory
Submodule 05C connection memory compensation node netCn and secondary memory node netDn, and input and touch in secondary memory submodule 05C
Control control signal TC1；It compensates submodule 05A connection and pulls up control node netAn and secondary memory node netDn, and compensating
Submodule 05A inputs touch-control enabling signal.
The information of voltage duplication for pulling up control node netAn is passed in touch detection last stage memory compensation module 05
Memory compensation node netCn, secondary memory submodule 05C opening make touch-control control signal TC1 input secondary memory node
NetDn, the voltage of secondary memory node netDn are increased to secondary memory voltage, and compensation submodule 05A opening makes touch-control starting letter
Number input pull-up control node netAn；
Make the voltage for pulling up control node netAn by first stage voltage drop in touch detection stage memory compensation module 05
Down to second stage voltage；
Stage memory compensation module 05 will pull up the voltage high of control node netAn to the first stage after touch detection
Voltage.
Each thin film transistor (TFT) includes control terminal, the first path terminal and alternate path end, below in an example, control
End processed is grid, and one of path terminal is source electrode, another path terminal is drain electrode.When give control terminal high level when, source electrode and
Drain electrode is connected by semiconductor layer, and thin film transistor (TFT) is in the open state at this time.
It should be noted that circuit diagram involved in following embodiment is left and right alternating expression (interlace) bogie
The left side gated sweep driving circuit or right side gated sweep driving circuit of (as shown in Figure 5) under structure, but grid of the present invention
The application of scan drive circuit is not limited only to which, can be adapted for the driving framework of arbitrary patterns, including non-left and right interlocks
The bilateral driving framework of formula, unilateral driving framework etc..In the case where left and right alternating expression drives framework, when in single-sided gate scan drive circuit
Clock number of signals is M, then the total counting clock signal quantity of bilateral is 2M, unilateral clock signal be expressed as CKm (m=1,
3 ..., 2M-1 or m=2,4 ..., 2M).
The pre-driver circuitry unit of so-called n-th stage drive circuit unit refers to (n-a) grade in embodiment below
Drive circuit unit, wherein 1≤n-a<The post-stage drive circuit unit of n, so-called n-th stage drive circuit unit refer to (n+
A) stage drive circuit unit, wherein n<n+a≤N.Preferably, in the case where left and right alternating expression drives framework, the n-th stage drive circuit unit
Pre-driver circuitry unit can be the n-th -2 stage drive circuit unit, the post-stage drive circuit list of the n-th stage drive circuit unit
Member can be the n-th+2 stage drive circuit unit.
In left and right alternating expression driving framework, so-called chopped-off head drive circuit unit refers in following embodiment：Left side grid
The chopped-off head drive circuit unit (the 1st stage drive circuit unit) of pole scan drive circuit and right side gated sweep driving circuit
Chopped-off head drive circuit unit (the 2nd stage drive circuit unit)；So-called tail stage drive circuit unit refers in following embodiment：It is left
The tail stage drive circuit unit (N-1 stage drive circuit unit) and right side gated sweep of side gated sweep driving circuit drive
The tail stage drive circuit unit (N stage drive circuit unit) of circuit.
4 clock signals CK1, CK3, CK5, CK7 are selected in embodiment below, the waveform of CK1, CK3, CK5, CK7 are such as
Shown in Fig. 7 and Fig. 8, when CK1, CK3, CK5, CK7 waveform sequentially generate, this clock signal input mode is referred to as clock letter
The input of number positive sequence, gated sweep driving circuit are in forward scanning state；When CK1, CK3, CK5, CK7 waveform backward generate,
This clock signal input mode is referred to as clock signal backward input, and gated sweep driving circuit is in reverse scan state.
It should be noted that selecting the clock signal and other clock signal input moulds of other quantity and waveform on the basis of the present invention
The conventional func improvement of formula should all fall into protection scope of the present invention.
Positive and negative main the 7th thin film transistor (TFT) M1A of preliminary filling element swept in control module 01 of n-th stage drive circuit unit
Diode (Diode) connection is used with the 9th thin film transistor (TFT) M1B, the negative sense of thin film transistor (TFT) is avoided to drift about to circuit function
It influences.The sequencing realization that drop-down empties is carried out using second clock signal CKm+4 simultaneously just sweeping and the anti-function of sweeping control.
The pull-up module 02 of n-th stage drive circuit unit is controlled by pull-up control node netAn, and the first clock is believed
Number CKm is converted into gated sweep signal Gn output, while being responsible for drop-down and emptying gated sweep signal wire.
The touch-control supplementary module 03 of n-th stage drive circuit unit receives externally input touch-control control signal TC1, in touch-control
Reconnaissance phase controls signal TC1 by touch-control to maintain pull-up control node netAn and the same level gated sweep signal wire.
The maintenance supplementary module 04 of n-th stage drive circuit unit can be configured according to different design requirements, can be wrapped
It includes that pull-up control node netAn, the same level gated sweep signal Gn are maintained or pulled down and the multiple functions such as empties.
As shown in fig. 6, the memory compensation module 05 of the n-th stage drive circuit unit includes compensation submodule 05A, memory submodule
Block 05B, secondary memory submodule 05C, drop-down submodule 05D and node control submodule 05E.Remember submodule 05B, secondary
Memory submodule 05C, drop-down submodule 05D and node control submodule 05E are connected to memory compensation node netCn, compensate
Submodule 05A and secondary memory submodule 05C is connected to secondary memory node netDn, compensation submodule 05A and memory submodule
Pull-up the control node netAn, node control submodule 05D and maintenance supplementary module of block 05B connection the n-th stage drive circuit unit
04 is connected to n-th grade of maintenance control node netBn, and compensation submodule 05A inputs touch-control enabling signal, secondary memory submodule
05C inputs touch-control and controls signal TC1.
Compensation submodule 05A is drawn the voltage for pulling up control node netAn by first stage voltage in the touch detection stage
Down to second stage voltage, the stage will pull up the voltage high of control node netAn to first stage voltage after touch detection；
Remember submodule 05B and replicates biography in the information of voltage that touch detection last stage opening will pull up control node netAn
Pass memory compensation node netBn；
Secondary memory submodule 05C is opened in the touch detection last stage makes touch-control control signal TC1 input secondary memory section
The voltage of secondary memory node netDn is raised to secondary memory voltage by point netDn；
Pull down submodule 05D after touch detection the stage by the voltage of memory compensation node netCn by the second memory voltage
It is pulled low to the first memory voltage, and maintains the voltage of memory compensation node netCn；
Node control submodule 05E is when memory compensation node netCn is in the second memory voltage of high level by n-th grade
The voltage pull-down of control node netBn is maintained to ensure not influencing the output of n-th grade of scanning grid scanning signal Gn to low potential.
The first capacitor C1 of n-th stage drive circuit unit is responsible for being lifted pull-up during the same level gated sweep signal Gn is exported
The voltage of control node netAn.
Gated sweep driving circuit of the invention can support bilateral scanning, can be applied to embedded touch display screen.It is logical
It crosses memory compensation module 05 and is replicated in the touch detection last stage and remember the information of voltage for pulling up control node netAn to memory compensation
Node netCn, and the voltage that signal TC1 is lifted secondary memory node netDn is controlled by the touch-control of input high level, in touch-control
Reconnaissance phase drags down the voltage of pull-up control node netAn, and the stage will be remembered by input touch-control enabling signal after touch detection
Recall the information of voltage stored in compensating module 05 and be copied to pull-up control node netAn again, while carrying out voltage or time benefit
It repays.Alleviate the defeated of the gated sweep signal wire of touch-control pause stage drive circuit unit and non-touch-control pause stage drive circuit unit
Difference out, mitigation, which even is eliminated, to stop cheating band, and does not include capacitor in memory compensation module 05, is conducive to reduce domain occupancy
Area.
The circuit structure of every stage drive circuit unit is identical in the present invention, and difference is only that the input of part thin film transistor (TFT)
Signal is different, mainly describes in detail below to n-th (1≤n≤N) grade circuit structure.
The present invention is discussed in detail with specific embodiment below.
Embodiment one：
It is illustrated in figure 7 a kind of circuit diagram of the embodiment one of gated sweep driving circuit, the n-th stage drive circuit unit packet
Include it is positive and negative sweep control module 01, pull-up module 02, touch-control supplementary module 03, maintain supplementary module 04, memory compensation module 05 with
And first capacitor C1.It is positive and negative to sweep control module 01, pull-up module 02, supplementary module 04 and memory compensation module 05 is maintained to be connected
It is connected to pull-up control node netAn；It is positive and negative to sweep control module 01, touch-control supplementary module 03 and supplementary module 04 is maintained to input
Constant pressure low level VSS；Pull-up module 02 is connected the same level gated sweep signal wire with touch-control supplementary module 03, gated sweep signal
Line exports gated sweep signal Gn；First capacitor C1 be connected to pull-up control node netAn and the same level gated sweep signal wire it
Between.
The memory compensation module 05 of n-th stage drive circuit unit includes compensation submodule 05A, remembers submodule 05B, is secondary
Remember submodule 05C, drop-down submodule 05D and node control submodule 05E.
As shown in fig. 7, specifically, compensation submodule 05A include first film transistor M1, first film transistor M1's
Control terminal connects secondary memory node netDn, and the two paths end of first film transistor M1 is separately connected pull-up control node
NetAn and input touch-control enabling signal, wherein touch-control enabling signal is touch-control high level VGH2；First film transistor M1 is being touched
Control node netAn will be pulled up by first stage voltage pull-down to second stage voltage and the rank after touch detection by controlling reconnaissance phase
Section is drawn high to pull-up control node netAn and voltage compensation makes it restore first stage voltage.
Remembering submodule 05B includes the 4th thin film transistor (TFT) M4, the control terminal and the 4th film of the 4th thin film transistor (TFT) M4
The first path terminal of transistor M4 is shorted and connects pull-up control node netAn, the alternate path end of the 4th thin film transistor (TFT) M4
Connect memory compensation node netCn；4th thin film transistor (TFT) M4 replicates memory pull-up control node in the touch detection last stage
The information of voltage of netAn passes to memory compensation node netCn.
Secondary memory submodule 05C includes the 15th thin film transistor (TFT) M15, the control terminal of the 15th thin film transistor (TFT) M15
Memory compensation node netCn is connected, the two paths end of the 15th thin film transistor (TFT) M15 is separately connected secondary memory node
NetDn and input touch-control control signal TC1；15th thin film transistor (TFT) is opened in the touch detection last stage will make the touching of high level
Control control signal TC1 inputs secondary memory node netDn, and the voltage of secondary memory node netDn is raised to secondary memory electricity
Pressure, the secondary memory voltage of high level can control compensation submodule 05A and open.
Pulling down submodule 05D includes the 18th thin film transistor (TFT) M9B, and the control terminal of the 18th thin film transistor (TFT) M9B inputs
Second clock signal CKm+4, the two paths end of the 18th film crystal M9B are separately connected memory compensation node netCn and defeated
Enter constant pressure low level VSS, the 18th thin film transistor (TFT) M9B after touch detection the stage by the voltage of memory compensation node netCn
First memory voltage is pulled low to by the second memory voltage and maintains the current potential of memory compensation node netCn.
Node control submodule 05E includes the 16th thin film transistor (TFT) M6C, the control terminal of the 16th thin film transistor (TFT) M6C
Memory compensation node netCn is connected, the two paths end of the 16th thin film transistor (TFT) M6C, which is separately connected, maintains submodule 04A's
Maintain control node netBn and input constant pressure low level VSS；16th thin film transistor (TFT) M6C auxiliary is to maintenance control node
The voltage pull-down ground level of netBn is to ensure not influence the output of gated sweep signal.
As shown in fig. 7, specifically, the maintenance supplementary module 04 of the n-th stage drive circuit unit include maintain submodule 04A and
Submodule 04B is emptied, submodule 04A is maintained to be connected to maintenance control node netBn with submodule 04B is emptied.Maintain submodule
Block 04A connection pull-up control node netAn simultaneously inputs constant pressure low level VSS and constant pressure high level VGH1；Maintain submodule to dimension
Control node netBn is held to charge and discharge and maintain pull-up control node netAn and gated sweep signal wire.The
Empty submodule 04B, pull-up module 02 and the touch-control supplementary module 03 of n stage drive circuit unit are connected to the n-th stage drive circuit
The gated sweep signal wire of unit empties submodule 04B in every frame end and switching on and shutting down to pull-up control node netAn, dimension
Control node netBn progress charge is held to empty.
The maintenance submodule 04A of n-th stage drive circuit unit includes the 5th thin film transistor (TFT) M5, the 6th thin film transistor (TFT)
M6, the 8th thin film transistor (TFT) M8, the 11st thin film transistor (TFT) M6A, the 12nd thin film transistor (TFT) M6B and the 13rd film crystal
Pipe M13.
The control terminal of 5th thin film transistor (TFT) M5 and the first path terminal of the 5th thin film transistor (TFT) M5 are shorted and input constant pressure
The alternate path end connection of high level VGH1, the 5th thin film transistor (TFT) M5 maintain control node netBn；5th thin film transistor (TFT) M5
It is charged using constant pressure high level VGH1 to maintenance control node netBn.
The control terminal of 6th thin film transistor (TFT) M6, which connects, pulls up control node netAn, and two of the 6th thin film transistor (TFT) M6
Path terminal, which is separately connected, maintains control node netB and input constant pressure low level VSS；6th thin film transistor (TFT) M6 controls maintenance
Node netBn carries out dragging down output of the processing to ensure not influence gated sweep signal Gn.
The control terminal of 11st thin film transistor (TFT) M6A inputs prime gated sweep signal, it is therefore preferable to which the n-th -2 grades grids drive
The gated sweep signal Gn-2 of dynamic circuit unit, the two paths end of the 11st thin film transistor (TFT) M6A is separately connected maintenance control
Node netBn and input constant pressure low level VSS；11st thin film transistor (TFT) M6A is assisted in forward scan to maintenance control section
Point netBn carries out dragging down output of the processing to ensure not influence gated sweep signal Gn.
The control terminal of 12nd thin film transistor (TFT) M6B inputs rear class gated sweep signal, it is therefore preferable to which the n-th+2 grades grids drive
The gated sweep signal Gn+2 of dynamic circuit unit, the two paths end of the 12nd thin film transistor (TFT) M6B is separately connected maintenance control
Node netBn and input constant pressure low level VSS；12nd thin film transistor (TFT) M6B is assisted in reverse scan to maintenance control section
Point netBn carries out dragging down output of the processing to ensure not influence gated sweep signal Gn.
The control terminal of 8th thin film transistor (TFT) M8, which connects, maintains control node netBn, and two of the 8th thin film transistor (TFT) M8
Path terminal is separately connected pull-up control node netAn and input constant pressure low level VSS；8th thin film transistor (TFT) M8 controls pull-up
Node netAn is maintained.
The control terminal connection of 13rd thin film transistor (TFT) M13 maintains control node netBn, the 13rd thin film transistor (TFT) M13
Two paths end be separately connected the same level gated sweep signal wire and input constant pressure low level VSS；13rd thin film transistor (TFT) M13
The same level gated sweep signal wire is maintained.
The submodule 04B that empties of n-th stage drive circuit unit includes the second thin film transistor (TFT) M2 and third thin film transistor (TFT)
M3。
The control terminal input of second thin film transistor (TFT) M2 empties reset signal CLR1, and two of the second thin film transistor (TFT) M2 are logical
Terminal is separately connected pull-up control node netAn and input constant pressure low level VSS；Second thin film transistor (TFT) M2 in every frame end and
Charge is carried out to pull-up control node netAn when switching on and shutting down to empty.
The control terminal input of third thin film transistor (TFT) M3 empties reset signal CLR1, and two of third thin film transistor (TFT) M3 are logical
Terminal, which is separately connected, maintains control node netBn and input constant pressure low level VSS；Third thin film transistor (TFT) M3 is in switching on and shutting down pair
It maintains control node netBn to carry out charge to empty.
As shown in fig. 7, specifically, the positive and negative control module 01 of sweeping of the n-th stage drive circuit unit includes the 7th film crystal
Pipe M1A, the 9th thin film transistor (TFT) M1B and the 15th thin film transistor (TFT) M9A.
The control terminal of 7th thin film transistor (TFT) M1A and the first path terminal of the 7th thin film transistor (TFT) M1A are shorted and input
One control signal, the alternate path end connection pull-up control node netAn of the 7th thin film transistor (TFT) M1A, the 4th thin film transistor (TFT)
M4A carries out preliminary filling to pull-up control node netAn in forward scan.
The control terminal of 9th thin film transistor (TFT) M1B and the first path terminal of the 9th thin film transistor (TFT) M1B are shorted and input
Two control signals, the alternate path end connection pull-up control node netAn of the 9th thin film transistor (TFT) M1B, the 9th thin film transistor (TFT)
M1B carries out preliminary filling to pull-up control node netAn in reverse scan.
Headed by the n-th stage drive circuit unit when stage drive circuit unit, first control signal is the first enabling signal
GSP1；When the n-th stage drive circuit unit not headed by stage drive circuit unit when, first control signal be prime gated sweep letter
Number；The gated sweep signal Gn-2 of preferably the n-th -2 stage drive circuit unit.
When the n-th stage drive circuit unit is tail stage drive circuit unit, second control signal is the first enabling signal
GSP1；When the n-th stage drive circuit unit is not tail stage drive circuit unit, second control signal is rear class gated sweep letter
Number；The gated sweep signal Gn+2 of preferably the n-th+2 stage drive circuit unit.
7th thin film transistor (TFT) M1A and the 9th thin film transistor (TFT) M1B uses diode (Diode) connection, avoids threshold value electric
Press circuit malfunction caused by negative sense drift.
The control terminal of 15th thin film transistor (TFT) M9A inputs second clock signal CKm+4, the 15th thin film transistor (TFT) M9A
Two paths end be separately connected pull-up control node netAn and input constant pressure low level VSS.15th thin film transistor (TFT) M9A
Pull-up control node netAn pull down and empties while controlling forward and reverse scanning switching, when carrying out forward scan second
The input of clock signal CKm+4 positive sequence, the second clock signal CKm+4 backward input when carrying out reverse scan.
As shown in fig. 7, specifically, pull-up module 02 includes the tenth thin film transistor (TFT) M10.Tenth thin film transistor (TFT) M10's
Control terminal connection pull-up control node netAn, the two paths end of the tenth thin film transistor (TFT) M10 is separately connected the first clock signal
CKm and the same level gated sweep signal wire.Tenth thin film transistor (TFT) M10 to the same level gated sweep signal wire carry out pull-up output and under
Drawing empties.
As shown in fig. 7, specifically, touch-control supplementary module 03 includes the 14th thin film transistor (TFT) M14.
The control terminal input touch-control of 14th thin film transistor (TFT) M14 controls signal TC1, the 14th thin film transistor (TFT) M14's
Two paths end is separately connected the gated sweep signal wire and input constant pressure low level VSS of the n-th stage drive circuit unit.14th
Thin film transistor (TFT) M14 maintains the same level gated sweep signal wire by touch-control control signal TC1 in the touch detection stage.
The control terminal input touch-control of 14th thin film transistor (TFT) M14 controls signal TC1, the 14th thin film transistor (TFT) M14's
Two paths end is separately connected pull-up control node netAn and input constant pressure low level VSS.14th thin film transistor (TFT) M14 exists
The touch detection stage controls signal TC1 by touch-control to maintain the current potential of pull-up control node netAn, and in every frame end and opens
Charge is carried out to pull-up control node netAn when shutdown to empty.
The driving wave of touch-control control the signal TC1 and touch-control high level VGH2 of memory compensation module 05 are inputted in the present embodiment
Shape is as shown in Figure 8.One frame time is divided into touch detection last stage, touch detection stage and touch detection by touch-control high level VGH2
Stage afterwards, touch-control high level VGH2 are low level, the stage after touch detection last stage and touch detection in the touch detection stage
For high electricity；Touch-control controls signal TC1 and in the touch detection last stage rises to high level by low level, after touch detection the stage by
High level is reduced to low level.I.e. as shown in figure 8, touch-control high level VGH2 is in the low level time than touch-control control signal
It is slightly short that TC1 is in the high point flat time, and touch detection stage two sides respectively have one section of touch-control high level VGH2 and touch-control control letter
Number TC1 is in the period of high level.
Illustrate that the working principle of memory compensation module 05 in the present embodiment, main actions process are as follows below：
Step①：The positive and negative first film transistor M1A swept in control module 01 receives the prime gated sweep of high level
When signal, the voltage of pull-up control node netAn is increased to first stage voltage, while the 4th thin film transistor (TFT) M4 is opened, will
The information of voltage of pull-up control node netAn copies to memory compensation node netCn, completes to replicate for the first time；
Step②：Touch-control controls signal TC1 and rises to high level, the memory compensation node netCn of high level by low level
The 15th thin film transistor (TFT) M15 opening is controlled, controlling the voltage of signal TC1 and Step holding time 2. by control touch-control makes
Second compensation node netDn is raised to secondary memory voltage, completes second and replicates, the secondary memory voltage of high level can be controlled
First film transistor M1 processed is opened；
Step③：Touch-control controls signal VGH2 and is reduced to low level by high level, and the current potential of pull-up control node netAn is logical
It crosses first film transistor M1 to be pulled low, the charge of pull-up control node netAn is emptied；Since the 4th thin film transistor (TFT) is brilliant
Body pipe (Diode) connection, memory compensation node netCn remains within high potential, and touch-control control signal TC1 is in high potential
Also secondary memory node netDn is made to maintain high potential；Driving circuit enters the touch detection stage, and all grades of pull-up controls section
Point netAn is kept at low potential, and the deviated stress of the tenth thin film transistor (TFT) M10 not at the same level is identical, and it is thin can to eliminate the tenth
Stop to cheat band caused by film transistor M10 characteristic drift is different；
Step④：After touch detection terminates, touch-control high level VGH2 is drawn high by low, then cooperates secondary memory node
NetDn controls first film transistor M1 and opens, the touch-control high level VGH2 input pull-up control node in high level
NetAn, make pull up control node netAn voltage increase, touch-control suspend grade pull-up control node netAn voltage again by
It draws high, while can be compensated by adjusting the time of the voltage and Step of touch-control high level VGH2 4., make pull-up control section
The voltage recovery of point netAn is to first stage voltage；
Step⑤：Touch-control controls signal TC1 and is reduced to low level, the current potential quilt of secondary memory node netDn by high level
It drags down, first film transistor M1 is closed, and first film transistor M1 is to pull-up control node when effectively avoiding normally exporting
The influence of netAn；
Step⑥：18th thin film transistor (TFT) M9B is opened, and empties the charge of memory compensation node netCn, while after being responsible for
It is continuous to maintain memory compensation node netCn.
Embodiment two：
Fig. 9 is a kind of circuit diagram of the embodiment two of gated sweep driving circuit of the present invention.Embodiment is second is that in reality
It applies and improves on the basis of example one, specific improvement is：
1, touch-control enabling signal is changed to the second enabling signal GSP2.
Touch-control controls signal TC1 and rises to high level by low level in the touch detection last stage, the stage after touch detection
Low level is reduced to by high level；The drive waveforms of second enabling signal GSP2 and touch-control control signal TC1 are as shown in Figure 10, the
Two enabling signal GSP2 are only high electricity in the starting time Td before touch-control control signal TC1 is reduced to low level by high level
Flat, remaining time is low level.
Second enabling signal GSP2 is responsible for the starting after touch-control pause, the touch-control high level in comparative example one specially
VGH2, in non-touch-control reconnaissance phase, the second enabling signal GSP2 and touch-control control signal TC1 are in low level, memory compensation
Node netCn and secondary memory node netDn are chronically at low potential, the first film transistor in memory compensation module 05
The deviated stress that M1, the 4th thin film transistor (TFT) M4 and the 15th thin film transistor (TFT) M14 are born is weaker, the drift of threshold voltage
It is smaller, be conducive to the stability for improving circuit.
Figure 11 is drive waveforms schematic diagram of the circuit shown in Fig. 9 in forward scan, which illustrates circuit drives and adopt
Waveform when with 4 clock signals (clock signal quantity when practical application is adjustable)：
GSP1 is the first enabling signal, is responsible for being started in forward scan and reverse scan；
CK1, CK3, CK5, CK7 are clock signals, and positive sequence exports when forward scan；
CLR1 is to empty reset signal, is mainly responsible for and carries out electricity to circuit internal node in every frame end and switching on and shutting down
Lotus empties；
Touch-control controls signal when TC1, and auxiliary maintains the same level gated sweep signal wire, pull-up control section in the touch detection stage
Point netAn and the current potential for maintaining control node netBn；
VGH1 is constant pressure high level, is mainly responsible for the input for maintaining submodule 04A；
GSP2 is the second enabling signal, is mainly responsible for and drags down pull-up control node netAn, Yi Ji in the touch detection stage
The voltage of pull-up control node netAn is drawn high after touch-control and is compensated；
VSS is constant pressure low level VSS, is mainly responsible for and provides the low potential of gated sweep signal Gn；
Other shown waveforms such as netA1, netA2, netAlast-1, netAlast are the output waves of circuit internal node
Shape, G1, G2 and Glast are respectively the waveform of the gated sweep signal of drive circuit unit outputs at different levels.
Figure 12 is drive waveforms schematic diagram of the circuit shown in Fig. 9 in reverse scan, which illustrates circuit drives and adopt
Waveform when with 4 clock signals (clock signal quantity when practical application is adjustable)：
GSP1 is the first enabling signal, is responsible for being started in forward scan and reverse scan；
CK1, CK3, CK5, CK7 are clock signals, and backward exports when reverse scan；
CLR1 is to empty reset signal, is mainly responsible for and carries out electricity to circuit internal node in every frame end and switching on and shutting down
Lotus empties；
Touch-control controls signal when TC1, and auxiliary maintains the same level gated sweep signal wire, pull-up control section in the touch detection stage
Point netAn and the current potential for maintaining control node netBn；
VGH1 is constant pressure high level, is mainly responsible for the input for maintaining submodule 04A；
GSP2 is the second enabling signal, is mainly responsible for and drags down pull-up control node netAn, Yi Ji in the touch detection stage
The voltage of pull-up control node netAn is drawn high after touch-control and is compensated；
VSS is constant pressure low level VSS, is mainly responsible for and provides the low potential of gated sweep signal Gn；
Other shown waveforms such as netA1, netA2, netAlast-1, netAlast are the output waves of circuit internal node
Shape, G1, G2 and Glast are respectively the waveform of the gated sweep signal of drive circuit unit outputs at different levels.
As is illustrated by figs. 11 and 12, gated sweep driving circuit of the invention using existing signal realize it is positive and negative sweep function and
It is unilateral only to need an enabling signal GSP1, be conducive to the frame of constriction display panel.
The invention also discloses a kind of liquid crystal display device, including above-mentioned gated sweep driving circuit, which is driven
Dynamic circuit can be left and right alternating expression driving method, the non-bilateral driving method of left and right alternating expression, be also possible to unilateral driving method.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (10)
1. a kind of gated sweep driving circuit, it is characterised in that：Including N (N>4, and N is positive integer) stage drive circuit unit；The
N (1≤n≤N, and n be positive integer) stage drive circuit unit include it is positive and negative sweep control module, pull-up module, touch-control supplementary module,
Supplementary module and memory compensation module are maintained, the memory compensation module includes compensation submodule and secondary memory submodule；
Secondary memory submodule connection memory compensation node and secondary memory node, secondary memory submodule input touch-control control signal；
Submodule connection pull-up control node and secondary memory node are compensated, compensation submodule inputs touch-control enabling signal；
The positive and negative of n-th stage drive circuit unit sweeps control module, pull-up module, maintains supplementary module and memory compensation module phase
It is connected to pull-up control node；The positive and negative of n-th stage drive circuit unit sweeps control module, touch-control supplementary module and maintains auxiliary
Module inputs constant pressure low level；The pull-up module and touch-control supplementary module of n-th stage drive circuit unit are connected to n-th grade of drive
The gated sweep signal wire of dynamic circuit unit；Gated sweep signal wire exports gated sweep signal；
The information of voltage for pulling up control node duplication is passed into memory compensation section in touch detection last stage memory compensation module
Point, secondary memory submodule opening make touch-control control signal input secondary memory node, increase the voltage of secondary memory node
To secondary memory voltage, compensation submodule opening makes touch-control enabling signal input pull-up control node；
Make the voltage for pulling up control node by first stage voltage drop down to second-order in touch detection stage memory compensation module
Section voltage；
Stage memory compensation module will pull up the voltage high of control node to first stage voltage after touch detection.
2. gated sweep driving circuit according to claim 1, it is characterised in that：
The memory compensation module of n-th stage drive circuit unit further includes memory submodule, drop-down submodule and node control
Module；Memory submodule, secondary memory submodule, drop-down submodule and node control submodule are connected to memory compensation section
Point, compensates submodule and secondary memory submodule is connected to secondary memory node, and compensation submodule is connected with memory submodule
The pull-up control node of n-th stage drive circuit unit, node control submodule and maintenance supplementary module are connected to n-th grade of maintenance control
Node processed；
The voltage of control node will be pulled up by first stage voltage pull-down to second stage in the touch detection stage by compensating submodule
Voltage, the stage will pull up the voltage high of control node to first stage voltage after touch detection；
The information of voltage for pulling up control node duplication is passed to memory compensation node in the touch detection last stage by memory submodule；
Secondary memory submodule is opened in the touch detection last stage makes touch-control control signal input secondary memory node, by secondary note
The voltage for recalling node is raised to secondary memory voltage；
Pulling down submodule stage after touch detection by the voltage of memory compensation node is pulled low to the first note by the second memory voltage
Recall voltage, and maintains the current potential of memory compensation node；
Node control submodule is when memory compensation node is in the second memory voltage of high level by n-th grade of maintenance control node
Voltage pull-down to low level.
3. gated sweep driving circuit according to claim 2, it is characterised in that：
The compensation submodule includes first film transistor, and the control terminal of first film transistor connects secondary memory node,
The two paths end of first film transistor is separately connected pull-up control node and input touch-control enabling signal；
The memory submodule includes the 4th thin film transistor (TFT), the control terminal of the 4th thin film transistor (TFT) and the 4th thin film transistor (TFT)
First path terminal is shorted and connects pull-up control node, and the alternate path end of the 4th thin film transistor (TFT) connects memory compensation node；
The secondary memory submodule includes the 15th thin film transistor (TFT), and the control terminal connection of the 15th thin film transistor (TFT) maintains control
Node processed, the two paths end of the 15th thin film transistor (TFT) are separately connected secondary memory node and input touch-control control signal；
The node control submodule includes the 16th thin film transistor (TFT), and the control terminal connection memory of the 16th thin film transistor (TFT) is mended
Node is repaid, the two paths end of the 16th thin film transistor (TFT), which is separately connected, maintains submodule and input constant pressure low level；
The drop-down submodule includes the 18th thin film transistor (TFT), the control terminal input second clock letter of the 18th thin film transistor (TFT)
Number, the two paths end of the 18th thin film transistor (TFT) is separately connected memory compensation node and input constant pressure low level.
4. gated sweep driving circuit according to claim 1, it is characterised in that：
The maintenance supplementary module includes maintaining submodule and emptying submodule, maintain submodule and empty submodule and the note
Recall compensating module and is connected to maintenance control node；
The maintenance submodule connection pull-up control node of n-th stage drive circuit unit simultaneously inputs constant pressure low level and the high electricity of constant pressure
It is flat；Submodule is maintained to charge and discharge to maintenance control node and carry out to pull-up control node and gated sweep signal wire
It maintains；
Empty submodule, pull-up module and the touch-control supplementary module of n-th stage drive circuit unit are connected to the n-th stage drive circuit list
The gated sweep signal wire of member empties submodule in every frame end and switching on and shutting down to pull-up control node, maintenance control node
Charge is carried out to empty.
5. gated sweep driving circuit according to claim 4, it is characterised in that：
The maintenance submodule of n-th stage drive circuit unit includes the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the 8th film crystalline substance
Body pipe, the 11st thin film transistor (TFT), the 12nd thin film transistor (TFT), the 13rd thin film transistor (TFT) and the 17th thin film transistor (TFT)；
The control terminal of 5th thin film transistor (TFT) and the first path terminal of the 5th thin film transistor (TFT) are shorted and input constant pressure high level, the
The alternate path end connection of five thin film transistor (TFT)s maintains control node；
The control terminal connection pull-up control node of 6th thin film transistor (TFT), the two paths end of the 6th thin film transistor (TFT) is separately connected
Maintain control node and input constant pressure low level；
The control terminal connection of 8th thin film transistor (TFT) maintains control node, and the two paths end of the 8th thin film transistor (TFT) is separately connected
Pull up control node and input constant pressure low level；
The control terminal of 11st thin film transistor (TFT) inputs prime gated sweep signal, the two paths end of the 11st thin film transistor (TFT)
It is separately connected and maintains control node and input constant pressure low level；
The control terminal of 12nd thin film transistor (TFT) inputs rear class gated sweep signal, the two paths end of the 12nd thin film transistor (TFT)
It is separately connected and maintains control node and input constant pressure low level；
The control terminal connection of 13rd thin film transistor (TFT) maintains control node, the two paths end difference of the 13rd thin film transistor (TFT)
Connect gated sweep signal wire and input constant pressure low level；
The control terminal of 17th thin film transistor (TFT) connects memory compensation node, the two paths end difference of the 17th thin film transistor (TFT)
Connection maintains control node and input constant pressure low level.
6. gated sweep driving circuit according to claim 4, it is characterised in that：
The submodule that empties of n-th stage drive circuit unit includes the second thin film transistor (TFT) and third thin film transistor (TFT)；
The control terminal input of second thin film transistor (TFT) empties reset signal, and the two paths end of the second thin film transistor (TFT) is separately connected
Pull up control node and input constant pressure low level；
The control terminal input of third thin film transistor (TFT) empties reset signal, and the two paths end of third thin film transistor (TFT) is separately connected
Maintain control node and input constant pressure low level.
7. gated sweep driving circuit according to claim 1, it is characterised in that：
The positive and negative control module of sweeping of n-th stage drive circuit unit includes the 7th thin film transistor (TFT), the 9th thin film transistor (TFT) and the
15 thin film transistor (TFT)s；
The control terminal of 7th thin film transistor (TFT) and the first path terminal of the 7th thin film transistor (TFT) are shorted and input first control signal,
The alternate path end connection pull-up control node of 7th thin film transistor (TFT)；
The control terminal of 9th thin film transistor (TFT) and the first path terminal of the 9th thin film transistor (TFT) are shorted and input second control signal,
The alternate path end connection pull-up control node of 9th thin film transistor (TFT)；
The control terminal of 15th thin film transistor (TFT) inputs second clock signal, the two paths end difference of the 15th thin film transistor (TFT)
Connection pull-up control node and input constant pressure low level.
8. gated sweep driving circuit according to claim 7, it is characterised in that：
Headed by the n-th stage drive circuit unit when stage drive circuit unit, the first control signal is the first starting letter
Number；When the n-th stage drive circuit unit not headed by stage drive circuit unit when, the first control signal be prime driving electricity
The gated sweep signal of road unit；
When the n-th stage drive circuit unit is tail stage drive circuit unit, the second control signal is the first starting letter
Number；When the n-th stage drive circuit unit is not tail stage drive circuit unit, the second control signal is rear class driving electricity
The gated sweep signal of road unit.
9. gated sweep driving circuit according to claim 1, it is characterised in that：
The touch-control supplementary module of n-th stage drive circuit unit includes the 14th thin film transistor (TFT), the control of the 14th thin film transistor (TFT)
Input touch-control in end processed controls signal, and the two paths end of the 14th thin film transistor (TFT) is separately connected the n-th stage drive circuit unit
Gated sweep signal wire and input constant pressure low level.
10. a kind of display device, it is characterised in that：Including the described in any item gated sweep driving circuits of claim 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810539855.XA CN108847192B (en) | 2018-05-30 | 2018-05-30 | A kind of gated sweep driving circuit and display device |
| PCT/CN2018/122466 WO2019227909A1 (en) | 2018-05-30 | 2018-12-20 | Gate driver unit monolithic, gate driver monolithic and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810539855.XA CN108847192B (en) | 2018-05-30 | 2018-05-30 | A kind of gated sweep driving circuit and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108847192A true CN108847192A (en) | 2018-11-20 |
| CN108847192B CN108847192B (en) | 2019-07-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810539855.XA Expired - Fee Related CN108847192B (en) | 2018-05-30 | 2018-05-30 | A kind of gated sweep driving circuit and display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108847192B (en) |
| WO (1) | WO2019227909A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637484A (en) * | 2019-01-23 | 2019-04-16 | 南京中电熊猫平板显示科技有限公司 | Gate drive unit circuit, gate driving circuit and display device |
| CN109801582A (en) * | 2019-02-27 | 2019-05-24 | 南京中电熊猫平板显示科技有限公司 | A kind of driving pixel circuit and display device certainly |
| WO2019227909A1 (en) * | 2018-05-30 | 2019-12-05 | 南京中电熊猫平板显示科技有限公司 | Gate driver unit monolithic, gate driver monolithic and display apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113593465B (en) * | 2021-08-06 | 2023-12-12 | 北京京东方显示技术有限公司 | Voltage compensation module, grid driving circuit, driving method of grid driving circuit and display substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150220194A1 (en) * | 2014-02-04 | 2015-08-06 | Apple Inc. | Displays with Intra-Frame Pause |
| CN106128347A (en) * | 2016-07-13 | 2016-11-16 | 京东方科技集团股份有限公司 | Shift register cell and driving method, gate driver circuit, display device |
| CN106297888A (en) * | 2016-07-06 | 2017-01-04 | 友达光电股份有限公司 | Shift temporary storage device |
| CN107221279A (en) * | 2017-05-19 | 2017-09-29 | 南京中电熊猫平板显示科技有限公司 | A kind of bilateral scanning drive circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847192B (en) * | 2018-05-30 | 2019-07-12 | 南京中电熊猫平板显示科技有限公司 | A kind of gated sweep driving circuit and display device |
-
2018
- 2018-05-30 CN CN201810539855.XA patent/CN108847192B/en not_active Expired - Fee Related
- 2018-12-20 WO PCT/CN2018/122466 patent/WO2019227909A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150220194A1 (en) * | 2014-02-04 | 2015-08-06 | Apple Inc. | Displays with Intra-Frame Pause |
| CN106297888A (en) * | 2016-07-06 | 2017-01-04 | 友达光电股份有限公司 | Shift temporary storage device |
| CN106128347A (en) * | 2016-07-13 | 2016-11-16 | 京东方科技集团股份有限公司 | Shift register cell and driving method, gate driver circuit, display device |
| CN107221279A (en) * | 2017-05-19 | 2017-09-29 | 南京中电熊猫平板显示科技有限公司 | A kind of bilateral scanning drive circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019227909A1 (en) * | 2018-05-30 | 2019-12-05 | 南京中电熊猫平板显示科技有限公司 | Gate driver unit monolithic, gate driver monolithic and display apparatus |
| CN109637484A (en) * | 2019-01-23 | 2019-04-16 | 南京中电熊猫平板显示科技有限公司 | Gate drive unit circuit, gate driving circuit and display device |
| CN109801582A (en) * | 2019-02-27 | 2019-05-24 | 南京中电熊猫平板显示科技有限公司 | A kind of driving pixel circuit and display device certainly |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019227909A1 (en) | 2019-12-05 |
| CN108847192B (en) | 2019-07-12 |
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Effective date of registration: 20200903 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Patentee after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Co-patentee before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Patentee before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Co-patentee before: NANJING HUADONG ELECTRONICS INFORMATION & TECHNOLOGY Co.,Ltd. |
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