CN108831933B - 背表面场GaSb热光伏电池及其制备方法 - Google Patents

背表面场GaSb热光伏电池及其制备方法 Download PDF

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CN108831933B
CN108831933B CN201810593479.2A CN201810593479A CN108831933B CN 108831933 B CN108831933 B CN 108831933B CN 201810593479 A CN201810593479 A CN 201810593479A CN 108831933 B CN108831933 B CN 108831933B
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余丁
赵有文
白永彪
沈桂英
董志远
刘京明
谢辉
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Jiangsu Qinene New Materials Co.,Ltd.
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Abstract

一种背表面场GaSb热光伏电池，包括：一衬底；一背电场层，其制作在衬底的背面；一背电极，其制作在背电场层上；一有源区，其制作在衬底的上面；一前电极，其制作在有源区上面的中间，该前电极的尺寸小于有源区的尺寸。本发明通过在电池背面增加一个nn+结，与原内建电场形成高低结电场，提供空穴势垒，利用能带工程提高光生载流子的收集效率，同时由于背电极附近掺杂浓度高，势垒区宽度更小，利于电子通过隧道效应贯穿势垒，使GaSb与背电极金属形成更好的欧姆接触。从而提高电池的效率。

Description

背表面场GaSb热光伏电池及其制备方法
技术领域
本发明涉及热光伏电池技术领域，具体涉及一种背表面场GaSb热光伏电池及其制备方法。
背景技术
热光伏电池是利用窄带隙半导体pn结的光生伏特效应将红外光转换成电能的器件。其原理与传统太阳电池类似，能量大于禁带宽度的光子由于本征吸收在pn结两边产生的电子-空穴对，即光生少数载流子。在pn结内建电场作用下光生少数载流子分别向相反方向运动，在pn结两端形成光生电动势。各种高温热辐射体，如燃气炉、核反应堆热钢坯等，都可以作为热光伏电池的光源，因此相比传统太阳电池，热光伏电池可以不受天气、昼夜等影响，工作更加稳定。
自20世纪60年代热光伏技术提出以来，基于Ge、Si、GaSb、InGaAsSb等材料的热光伏电池已可以通过LPE、MOCVD、MBE或扩散法制得。常见的GaSb电池通常由扩散法制得，为pn型，其中电池正表面为p型掺杂，结构非常简单，美国JX Crystals生产的GaSb单结热光伏电池，其热光伏系统效率为24％，但相比其他类型的太阳电池，热光伏电池的转换效率仍然较低。
发明内容
为了克服现有GaSb热光伏电池的不足，本发明提供一种背表面场GaSb热光伏电池及其制备方法，通过在电池背面增加一个nn+结，与原内建电场形成高低结电场，提供空穴势垒，利用能带工程提高光生载流子的收集效率，同时由于背电极附近掺杂浓度高，势垒区宽度更小，利于电子通过隧道效应贯穿势垒，使GaSb与背电极金属形成更好的欧姆接触。从而提高电池的效率。
本发明提供一种背表面场GaSb热光伏电池，包括：
一衬底；
一背电场层，其制作在衬底的背面；
一背电极，其制作在背电场层上；
一有源区，其制作在衬底的上面；
一前电极，其制作在有源区上面的中间，该前电极的尺寸小于有源区的尺寸。
本发明还提供一种背表面场GaSb热光伏电池的制备方法，包括如下步骤：
步骤1：将衬底依次用丙酮、CCl4、丙酮和无水乙醇超声清洗，除去晶片表面残留的有机杂质；之后用浓度＜20％的稀盐酸清洗，除去表面的氧化层；用去离子水冲洗之后用氮气吹干；
步骤2：用扩散法在衬底上制备有源区，随后分别用丙酮、无水乙醇超声清洗，然后用氮气吹干；
步骤3：将扩散所得的GaSb晶片背部打磨减薄80-100μm，除去背部的Zn扩散层并减薄衬底；
步骤4：在衬底的背面制备n+型背电场层，第一次快速退火；
步骤5：在背电场层上制作背电极，第二次快速退火；
步骤6：在有源区上制作前电极，形成基片；
步骤7：对基片进行切割，对已经制备前后电极的GaSb电池切割进行边缘绝缘，防止电池短路。
采用上述方法制备的本发明的背表面场GaSb热光伏电池相比传统GaSb电池，在GaSb晶片的背面通过高能离子注入法增加了一层掺Te的n+重掺杂区域，因此电池的背表面增加了一个nn+结，与原内建电场形成高低结电场。所增加的背电场提供了空穴势垒，可以实现背表面附近载流子的空间分离，抑制了GaSb-背电极界面的少子复合。同时由于背电极附近掺杂浓度高，势垒区宽度更小，利于电子通过隧道效应贯穿势垒，使GaSb与背电极金属形成更好的欧姆接触。
附图说明
为进一步说明本发明的技术内容，以下结合实施例及附图详细说明如后，其中：
图1为本发明所述的背表面场GaSb热光伏电池的结构示意图；
图2位本发明所述的背表面场GaSb热光伏电池在热平衡态时的能带结构示意图；
图3为本发明所述的背表面场GaSb热光伏电池制备方法的流程图。
具体实施方式
请参阅图1所示，本发明提供一种背表面场GaSb热光伏电池，包括：
一衬底3，所述的衬底3为采用液封直拉法(LEC)生长的Te掺杂n型GaSb单晶切割并抛光所得的单晶片，施主Te掺杂浓度为5×1016-8×1016cm-3，晶向(100)方向向(110)方向偏2°，厚度500μm，尺寸为1×1cm2；
一有源区4，其制作在衬底3的上面，所述有源区4的材料为Zn扩散的p型GaSb，扩散深度为300-800nm，掺杂浓度为5×1018-5×1019cm-3；
一背电场层2，其制作在衬底3的背面，所述背电场层2的材料为Te离子注入的n+型GaSb，注入深度为50-75nm，掺杂浓度为1×1018-1×1019cm-3；
一背电极1，其制作在背电场层2上，所述背电极1的材料和厚度为Ti(30-50nm)/Au(80-100nm)；
一前电极5，其制作在有源区4上面的中间，该前电极5的尺寸小于有源区4，所述前电极5的材料和厚度为Ti(30-50nm)/Au(80-100nm)。
请参阅图3，并结合参阅图1所示，本发明提供一种背表面场GaSb热光伏电池的制备方法，包括如下步骤：
步骤1：将衬底3依次用丙酮、CCl4、丙酮和无水乙醇超声清洗，除去晶片表面残留的有机杂质；之后用浓度＜20％的稀盐酸清洗，除去表面的氧化层；用去离子水冲洗之后用氮气吹干，所述的衬底3的材料为n型GaSb；
步骤2：用扩散法在衬底3上制备p型有源区4，所述制备有源区4的步骤包括：在石英舟内放置固态Zn、Ga颗粒作为扩散源，与清洗后的衬底3一并置于石英管中；将石英管用分子泵抽至真空(＜10-5mbar)后密封，在500-550℃的温度条件下扩散90-120min；扩散结束后将GaSb晶片用1∶15稀盐酸清洗1min，随后分别用丙酮、无水乙醇超声清洗，然后用氮气吹干，所述有源区4的材料为Zn扩散的p型GaSb；
步骤3：将扩散所得的GaSb晶片背部打磨减薄80-100μm，除去背部的Zn扩散层并减薄衬底3；
步骤4：在衬底3的背面制备n+型背电场层2，第一次快速退火，所述制备n+型背电场2的步骤包括：用高能离子注入机将能量为150-250keV、剂量为1013cm-2的Te离子注入到去背结后的衬底3背表面；将离子注入后的GaSb晶片在600℃氮气气氛下第一次快速退火处理，退火时间为30-60s，所述背电场层2的材料为Te离子注入的n+型GaSb；
步骤5：在n+型背电场层2上用电子束蒸发法制作背电极1，在250℃氮气气氛下第二次快速退火10-30s，所述背电极1的材料和厚度为Ti(30-50nm)/Au(80-100nm)；
步骤6：在有源区4上通过光刻选定沉积前电极5的区域，用电子束蒸发法制作前电极5，随后用丙酮溶液清洗除去残余光刻胶，形成基片，所述前电极5的材料和厚度为Ti(30-50nm)/Au(80-100nm)；
步骤7：对已经制备前后电极的GaSb电池基片切割进行边缘绝缘，防止电池短路。
请参阅图2，并结合参阅图1所示，本发明的背表面场GaSb热光伏电池在热平衡态时的能带结构包括：导带6；费米能级7；价带8；Zn扩散的p型GaSb有源区4对应的能带结构9；n型GaSb衬底3对应的能带结构10；Te离子注入的n+型GaSb背电场层2对应的能带结构11。
本发明的工作过程为：热辐射源M发出的入射光M照射到本发明的背表面场GaSb热光伏电池，能量大于GaSb禁带宽度的光子由于本征吸收在有源区4和衬底3形成的pn结的两边产生电子-空穴对，即光生少数载流子；在pn结内建电场作用下光生少数载流子分别向相反方向运动，即电子向电池背表面运动，空穴向电池前表面运动；光生少数载流子由背电极1和前电极5进行收集，并形成电流。
衬底3和背电场层2形成的nn+结提供了空穴势垒，阻止了空穴向背电场层2的运动，实现了少数载流子的空间分离，抑制了电池背表面附近的少数载流子复合；背电场层2掺杂浓度高，势垒区宽度更小，利于电子通过隧道效应贯穿势垒，使背电场层2与背电极1形成更好的欧姆接触。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (4)

1.一种背表面场GaSb热光伏电池的制备方法，包括如下步骤：
步骤1：将衬底依次用丙酮、CCl4、丙酮和无水乙醇超声清洗，除去晶片表面残留的有机杂质；之后用浓度＜20％的稀盐酸清洗，除去表面的氧化层；用去离子水冲洗之后用氮气吹干；
步骤2：用扩散法在衬底上制备有源区，随后分别用丙酮、无水乙醇超声清洗，然后用氮气吹干；
步骤3：将扩散所得的GaSb晶片背部打磨减薄80-100μm，除去背部的Zn扩散层并减薄衬底；
步骤4：在衬底的背面制备n+型背电场层，具体包括如下子步骤：用高能离子注入机将1013cm-2、150-250keV的Te离子注入到去背结后的GaSb晶片背表面；将离子注入后的GaSb晶片在600℃氮气气氛下第一次快速退火处理，退火时间为30-60s；
步骤5：在背电场层上制作背电极，第二次快速退火；
步骤6：在有源区上制作前电极，形成基片；
步骤7：对已经制备前后电极的GaSb电池切割从而达到边缘绝缘、防止电池短路的目的。
2.根据权利要求1所述的背表面场GaSb热光伏电池的制备方法，其中衬底的材料为n型GaSb，前电极的材料为Ti/Au，厚度为Ti层30-50nm，Au层80-100nm。
3.根据权利要求1所述的背表面场GaSb热光伏电池的制备方法，其中有源区的材料为Zn扩散的p型GaSb。
4.根据权利要求1所述的背表面场GaSb热光伏电池的制备方法，其中背电极的材料为Ti/Au，厚度为Ti层30-50nm，Au层80-100nm。
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