CN108831899A - Imaging sensor and the method for forming imaging sensor - Google Patents
Imaging sensor and the method for forming imaging sensor Download PDFInfo
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- CN108831899A CN108831899A CN201810610463.8A CN201810610463A CN108831899A CN 108831899 A CN108831899 A CN 108831899A CN 201810610463 A CN201810610463 A CN 201810610463A CN 108831899 A CN108831899 A CN 108831899A
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- 239000000463 material Substances 0.000 claims abstract description 41
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
This disclosure relates to a kind of imaging sensor, including：Semiconductor substrate, for forming photodiode wherein；Reflecting part under the semiconductor substrate and covers the photodiode at least partly, and the upper surface of the reflecting part is directly contacted with the lower surface of the semiconductor substrate；And interlevel dielectric layer, under the reflecting part, the upper surface of the interlevel dielectric layer is directly contacted with the lower surface of the reflecting part, wherein, the refractive index of the material of the reflecting part is formed between the refractive index for the material for forming the semiconductor substrate and the refractive index of the material of the formation interlevel dielectric layer.Present disclosure also relates to a kind of methods for forming imaging sensor.The disclosure can be improved the performance of imaging sensor.
Description
Technical field
This disclosure relates to technical field of semiconductors, it particularly relates to a kind of imaging sensor and formation imaging sensor
Method.
Background technique
In the image sensor, photodiode is needed fully to absorb incident light.
Accordingly, there exist the demands to new technology.
Summary of the invention
The method that one purpose of the disclosure is to provide the new imaging sensor of one kind and forms imaging sensor.
According to the disclosure in a first aspect, provide a kind of imaging sensor, including：Semiconductor substrate, for wherein
Form photodiode；Reflecting part under the semiconductor substrate and covers the photodiode at least partly, institute
The upper surface for stating reflecting part is directly contacted with the lower surface of the semiconductor substrate；And interlevel dielectric layer, it is located at described anti-
It penetrates under portion, the upper surface of the interlevel dielectric layer is directly contacted with the lower surface of the reflecting part, wherein formed described anti-
Penetrate refractive index and the formation interlevel dielectric layer of the refractive index between the material for forming the semiconductor substrate of the material in portion
Material refractive index between.
According to the second aspect of the disclosure, a kind of method for forming imaging sensor is provided, including：Semiconductor lining is provided
Bottom, the semiconductor substrate for forming photodiode wherein；Under the semiconductor substrate and described in the covering
At least part of region of photodiode forms reflecting part, the following table of the upper surface of the reflecting part and the semiconductor substrate
Face directly contacts；Form interlevel dielectric layer under the reflecting part, the upper surface of the interlevel dielectric layer and described anti-
The lower surface for penetrating portion directly contacts, wherein forms the refractive index of the material of the reflecting part between the formation semiconductor substrate
Material refractive index and form the interlevel dielectric layer the refractive index of material between.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, wherein：
Fig. 1 is the schematic diagram for schematically showing the structure of the imaging sensor according to some embodiments of the present disclosure.
Fig. 2 is the schematic diagram for schematically showing the structure of the imaging sensor according to some embodiments of the present disclosure.
Fig. 3 is the light near the reflecting part in the imaging sensor schematically shown according to some embodiments of the present disclosure
The schematic diagram on road.
Fig. 4 A to 4E is to schematically show forming image biography according to some exemplary embodiments of the disclosure
The schematic diagram in the section of the imaging sensor at the exemplary some steps of a method of sensor.
Fig. 5 A to 5E is to schematically show forming image biography according to some exemplary embodiments of the disclosure
The schematic diagram in the section of the imaging sensor at the exemplary some steps of a method of sensor.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the disclosure, mean to combine embodiment description to " one embodiment ", referring to for " some embodiments "
Feature, structure or characteristic are included at least one embodiment, at least some embodiments of the disclosure.Therefore, phrase is " at one
In embodiment ", the appearance of " in some embodiments " everywhere in the disclosure be not necessarily referring to it is same or with some embodiments.This
It outside, in one or more embodiments, can in any suitable combination and/or sub-portfolio comes assemblage characteristic, structure or characteristic.
Present inventor has found after studying, and the semiconductor lining of photodiode is used to form in imaging sensor
Bottom is usually 10 in the absorption coefficient of visible light wave range-3~10-4cm-1.Therefore, in order to enable photodiode to be absorbed into foot
Enough light needs semiconductor substrate thicker, such as generally 3~4 microns.Thicker semiconductor substrate causes at ion implanting
Reason (for example, the ion implanting processing for being used to be formed photodiode, floating diffusion region, doping isolated area etc.), etching processing (example
Such as, for forming the etching processing of deep groove isolation structure) and filling processing (for example, being used to be formed the filling of deep groove isolation structure
Processing) etc. become complicated, and due to photodiode region too depth caused by charge collection efficiency reduce, response speed
The problems such as optical crosstalk slack-off, between pixel unit increases.
Structure according to the imaging sensor of some embodiments of the present disclosure is as shown in Figure 1.In these embodiments, image
Sensor includes：Semiconductor substrate 10, for forming photodiode 11 wherein；Reflecting part 30 is located at semiconductor substrate 10
Under and cover photodiode 11 at least partly, the upper surface of reflecting part 30 directly connects with the lower surface of semiconductor substrate 10
Touching；And interlevel dielectric layer 20, it is located under reflecting part 30, the upper surface of interlevel dielectric layer 20 and the following table of reflecting part 30
Face directly contacts.Wherein, refractive index of the refractive index between the material for forming semiconductor substrate 10 of the material of reflecting part 30 is formed
And it is formed between the refractive index of material of interlevel dielectric layer 20.
In these embodiments, by the way that at least part of of covering photodiode 11 is arranged under semiconductor substrate 10
Reflecting part 30, reflecting part 30 are used to will transmit through not reflected by the light that photodiode 11 absorbs for photodiode 11, make
Obtaining these light can be again introduced into photodiode 11 and be absorbed by photodiode 11.In this way, with existing image sensing
Device is compared, and in the case where the thickness of semiconductor substrate is constant, the imaging sensor of the disclosure can increase light in two pole of photoelectricity
Light path in pipe, so that photodiode can absorb more light；The image sensing with the prior art can reached
In the case where the identical absorptivity of device, the imaging sensor of the disclosure can reduce the thickness of semiconductor substrate, to reduce
The complexity of ion implanting processing, etching processing and filling processing etc., improve photodiode charge collection efficiency and
Response speed, and reduce the optical crosstalk between pixel unit.
In some embodiments, the optical thickness of reflecting part 30 is configured as：So that light is at the upper surface of reflecting part 30
What the first reflected light (referring to straight line L12 with the arrow in Fig. 3) and light reflected was reflected at the lower surface of reflecting part 30
Second reflected light (referring to straight line L32 with the arrow in Fig. 3) is superimposed (referring to band arrow in Fig. 3 on the upper surface of reflecting part 30
The superposition of the straight line L12 and L13 of head) after intensity, greater than intensity of first reflected light on the upper surface of reflecting part 30,
And it is greater than intensity of second reflected light on the upper surface of reflecting part 30.The optical thickness of reflecting part 30 is the object of reflecting part 30
Manage the product of the refractive index of thickness and reflecting part 30.Therefore, the physical thickness and refractive index for properly configuring reflecting part 30, can
It needs so that the reflecting effect of 30 pairs of light of reflecting part meets or makes the reflecting effect of 30 pairs of light of reflecting part best.
As shown in figure 3, the light L11 to advance in semiconductor substrate 10 reaches half due to not absorbed by photodiode 11
The interface of conductor substrate 10 and reflecting part 30, with incidence angle θ 1.In the interface of semiconductor substrate 10 and reflecting part 30
Locate, a part of light L12 in light L11 is returned in semiconductor substrate 10 by reflection, and another part light L31 enters reflecting part 30
The interface for continuing on and reaching reflecting part 30 and interlevel dielectric layer 20 afterwards, with incidence angle θ 2.In 30 He of reflecting part
At the interface of interlevel dielectric layer 20, a part of light L32 in light L31 is returned in reflecting part 30 by reflection, another portion
Light splitting L21 is continued on after passing through reflecting part 30, and the angle of emergence is θ 3.The light L32 being reflected back in reflecting part 30 is reflecting
The interface up to reflecting part 30 and semiconductor substrate 10 is continued in portion 30, with incidence angle θ 2.In 30 He of reflecting part
At the interface of semiconductor substrate 10, a part of light (not shown) in light L32 is returned in reflecting part 30 by reflection, another
Part light L13 is continued on after passing through reflecting part 30 into semiconductor substrate 10, and the angle of emergence is θ 1.
The reflectivity of reflecting part 30 is the ratio between reflective light intensity and incident intensity, with adjacent emergent light (such as light L12 with
L13 phase difference between) and change, and the phase difference between adjacent emergent light is since their light path is related, i.e., with reflection
Optical thickness (i.e. the product of the refractive index of reflecting part 30 and physical thickness) in portion 30 is related.Therefore, reflecting part is properly selected
30 refractive index and physical thickness, enabling to the phase difference between adjacent emergent light (such as light L12 and L13) is zero (i.e.
The reflecting effect of reflecting part 30 is best) or phase absolute value of the difference be less than predetermined difference (i.e. the reflecting effect of reflecting part 30 be full
Sufficient pre-provisioning request).It is converted in a cycle (i.e. 2 п) it will be understood by those skilled in the art that phase difference as described herein refers to
Phase difference.
In some embodiments, reflecting part 30 can also be multilayered structure.Properly configure each layer of reflecting part 30
Physical thickness and refractive index enable to the reflecting effect of 30 pairs of light of reflecting part to meet and need or make 30 pairs of light of reflecting part
Reflecting effect is best.
In these above-mentioned embodiments, the refractive index of the material of reflecting part 30 is formed between the material for forming semiconductor substrate 10
Between the refractive index of material and the refractive index of material for forming interlevel dielectric layer 20.In general, semiconductor substrate 10 is formed by silicon,
Refractive index is 3.5 or so；Interlevel dielectric layer 20 is formed by silica, and refractive index is 1.48 or so.Therefore, reflecting part is formed
30 material may be selected to be refractive index less than silicon but be greater than the dielectric substance of silica, such as (its refractive index is silicon carbide
2.64 or so), silicon nitride (its refractive index is 2.02 or so), silicon oxynitride, aluminium oxide (its refractive index is 1.765 or so), mix
Miscellaneous silica, titanium dioxide (its refractive index is 2.6~2.9 or so), gallium phosphide etc..In the material for forming interlevel dielectric layer 20
Refractive index be greater than form semiconductor substrate 10 material refractive index in the case where, formed reflecting part 30 material may be selected to be
Refractive index is greater than the material for forming semiconductor substrate 10 but is less than the dielectric substance for forming the material of interlevel dielectric layer 20.
In these above-mentioned embodiments, since reflecting part 30 is not rely on the friendship in semiconductor substrate 10 and reflecting part 30
The reflection of interface being totally reflected to realize 30 pairs of light of reflecting part, therefore, reflecting part 30 can not only reflect those and reach reflection
The biggish light of the incidence angle in portion 30, additionally it is possible to reflect the lesser light of incidence angle of those arrival reflecting parts 30 (for example, incidence angle is small
In the light of the critical angle of total reflection), realize preferable technical effect.For example, reflecting part 30 may be implemented to incidence angle less than 10 °
Incident light reflectivity be greater than 90%.
In some embodiments, the physical thickness of reflecting part 30 is configured as meeting in each physical thickness of following condition
Minimum value：So that the first reflected light that light is reflected at the upper surface of reflecting part 30 (such as straight line with the arrow in Fig. 3
L12) and the second reflected light (such as straight line L32 with the arrow in Fig. 3) for being reflected at the lower surface of reflecting part 30 of light is anti-
The intensity being superimposed after (such as superposition of straight line L12 and L13 with the arrow in Fig. 3) is penetrated on the upper surface in portion 30, is greater than the
Intensity of one reflected light on the upper surface of reflecting part 30, and it is strong on the upper surface of reflecting part to be greater than the second reflected light
Degree.The physical thickness of reflecting part 30 is smaller, and translucency is better, i.e., the light for being absorbed or scattering in reflecting part 30
It is fewer, it may make the reflecting effect of reflecting part 30 better.It is some be in embodiment, the range of the physical thickness of reflecting part can
Think
In some embodiments, the physical thickness of photodiode 11 is configured as：So that light is reflected back by reflecting part 30
It can be fully absorbed by photodiode 11 after into photodiode 11.It will be understood by those skilled in the art that photoelectricity two
The physical thickness of pole pipe 11 is the smaller the better in the case where meeting above-mentioned condition.For example, being used for visible light in photodiode 11
In the case where, the physical thickness of photodiode 11 may range fromIt is used in photodiode 11
In the case where infrared light, the physical thickness of photodiode 11 be may range from
In some embodiments, in the plan view of the major surfaces in parallel of imaging sensor, the image sensing of the disclosure
The structure of device is as shown in Figure 2.Covering photodiode 11 is at least partly for reflecting part 30 (going out as shown in phantom in Figure 2).?
In example shown in Fig. 2, reflecting part 30 does not cover the area at 13 place of region and floating diffusion region where transmission grid 21
Domain, it will be understood by those skilled in the art that reflecting part 30 can also completely or partially cover the region where transmission grid 21 with
And the region where floating diffusion region 13.
It in some embodiments, include the pixel unit of multiple light for being respectively used to different wavelength in imaging sensor,
Reflecting part 30 includes being located at the first reflecting part of the first pixel unit and the light for first wave length and positioned at the second pixel unit
And the second reflecting part of the light for second wave length.Wherein, first wave length is less than second wave length, and the optics of the first reflecting part
Optical thickness of the thickness less than the second reflecting part.The different optical thicknesses of reflecting part 30 in different pixels unit, can be
Physical thickness is identical but refractive index is different, is also possible to that refractive index is identical but physical thickness is different, can also be physical thickness and
Refractive index is all different.This can realize by Multiple depositions processing, such as to the different pixels of the light for different wave length
Unit uses different deposition processes；It can also be by primary common deposition processes later again to certain pixel unit carry out portion
Point etching processing is realized.Nevertheless, it will be understood by those skilled in the art that can also be to the light for different wavelength
Pixel unit uses the reflecting part 30 of identical optical thickness, properly selects the optical thickness of reflecting part 30, can make to each
The reflection of the light of a wavelength is all satisfied needs.
Below according to Fig. 4 A to 4E description according to the method for the formation imaging sensor of some embodiments of the present disclosure.
As shown in Figure 4 A, in semiconductor substrate SUB formed photodiode PD, then semiconductor substrate SUB just
Face (upper surface of semiconductor substrate SUB shown in the lower surface of semiconductor substrate 10 i.e. shown in FIG. 1 and Fig. 4 A to Fig. 5 E)
Deposit one layer formation reflecting part REF material LR, such as by chemical vapor deposition process, physical vapour deposition (PVD) process and
Atomic layer deposition processing etc., as shown in Figure 4 B.Wherein, the refractive index for forming the material of reflecting part REF is served as a contrast between semiconductor is formed
Between the refractive index of the material of bottom SUB and the refractive index of material for forming interlevel dielectric layer ILD1, ILD2 and ILD3.It will deposition
This layer formed reflecting part REF material LR carry out patterned process (such as being handled by lithography and etching), formed reflection
Portion REF, wherein reflecting part REF covers at least partly region of photodiode PD, as shown in Figure 4 C.
Then it forms transistor and (illustrates only transmission transistor in the attached drawing of the disclosure comprising transmit grid TG and float
Set diffusion region FD) and around photodiode PD isolation structure (illustrated only in attached drawing 4D and 4E from semiconductor serve as a contrast
The fleet plough groove isolation structure STI that the front of bottom SUB is formed), as shown in Figure 4 D.It is formed later and is being located at semiconductor substrate SUB just
Each interlevel dielectric layer ILD1, ILD2 and the ILD3 in face and leading in each interlevel dielectric layer ILD1, ILD2 and ILD3
The structures such as electric contact piece, interconnection metallization lines, as shown in Figure 4 E.Imaging sensor can be overturn later to be served as a contrast in semiconductor
The back side (the semiconductor substrate SUB shown in the upper surface of semiconductor substrate 10 i.e. shown in FIG. 1 and Fig. 4 A to Fig. 5 E of bottom SUB
Lower surface) form the structures (not shown) such as other isolation structures, colour filter, lenticule.
Below according to Fig. 5 A to 5E description according to the method for the formation imaging sensor of some embodiments of the present disclosure.
In the material LR of one layer of formation reflecting part REF of front deposition of semiconductor substrate SUB, such as pass through chemical vapor deposition
Product processing, physical vapour deposition (PVD) process and atomic layer deposition processing etc., as shown in Figure 5A.Wherein, form reflecting part REF's
The refractive index of material between formed semiconductor substrate SUB material refractive index and formed interlevel dielectric layer ILD1, ILD2 and
Between the refractive index of the material of ILD3.Then the material LR that this layer of deposition forms reflecting part REF is subjected to patterned process
(such as being handled by lithography and etching) forms reflecting part REF, and wherein reflecting part REF covers at least portion of photodiode PD
Subregion, as shown in Figure 5 B, other regions of the semiconductor substrate SUB of exposing can be used to form other structures.
Then the processing of multiple ion implanting is carried out, photodiode PD is formed, pinned photodiode (not shown), floats
Set the function elements such as diffusion region PD and the higher lateral isolation of identical but doping concentration with the doping type of semiconductor substrate SUB
Region LI, as shown in Figure 5 C.Lateral isolation region LI surrounds the shallow trench isolation that will be formed in the front of semiconductor substrate SUB
STI, and make shallow trench isolation STI and semiconductor substrate SUB the back side formed deep trench isolation (not shown) between
Gap connects, and the lateral transfer for further decreasing light induced electron brings the crosstalk between pixel unit.
Be subsequently formed transistor (illustrate only transmission transistor in the attached drawing of the disclosure comprising transmission grid TG and
Floating diffusion region FD) and shallow isolation structures STI around photodiode PD, as shown in Figure 5 D.It is formed and is located at later
Positive each interlevel dielectric layer ILD1, ILD2 and ILD3 of semiconductor substrate SUB and be located at each interlevel dielectric layer
The structures such as conductive contact piece, interconnection metallization lines in ILD1, ILD2 and ILD3, as shown in fig. 5e.Then semiconductor can be served as a contrast
Bottom SUB is thinned, is polished, and after the wafer for having made device is spun upside down, is bonded another wafer, is passed through chemical machine
Tool planarization is thinned and polishing；After cleaning, then in the formation of the back side of semiconductor substrate SUB deep trench isolation, colour filter, isolated gate
The structures such as lattice and lenticule.
Although only form schematically shows the structure of the imaging sensor of pixel region, this field in the attached drawing of the disclosure
Technical staff can obtain the structure and formation of the entirety of imaging sensor involved in the disclosure based on the content that the disclosure is recorded
Method.
Word " A or B " in specification and claim includes " A and B " and " A or B ", rather than is exclusively only wrapped
Include " A " or only include " B ", unless otherwise specified.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature and another element/node/feature in electricity
Above, it is directly connected (or direct communication) mechanically, in logic or in other ways.Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including benefit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, middle certain term of use can also be described below, and thus not anticipate just to the purpose of reference
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include following example：
1. a kind of imaging sensor, which is characterized in that including：
Semiconductor substrate, for forming photodiode wherein；
Reflecting part under the semiconductor substrate and covers the photodiode at least partly, the reflection
The upper surface in portion is directly contacted with the lower surface of the semiconductor substrate；And
Interlevel dielectric layer is located under the reflecting part, the upper surface of the interlevel dielectric layer and the reflecting part
Lower surface directly contact,
Wherein, refractive index of the refractive index between the material for forming the semiconductor substrate of the material of the reflecting part is formed
And it is formed between the refractive index of material of the interlevel dielectric layer.
2. the imaging sensor according to 1, which is characterized in that the optical thickness of the reflecting part is configured as：So that
The first reflected light that the light is reflected at the upper surface of the reflecting part and the light are at the lower surface of the reflecting part
Intensity of the second reflected light reflected after superposition on the upper surface of the reflecting part, is greater than first reflected light and exists
Intensity on the upper surface of the reflecting part, and it is strong on the upper surface of the reflecting part to be greater than second reflected light
Degree.
3. the imaging sensor according to 2, which is characterized in that on the upper surface of the reflecting part, described first
Phase absolute value of the difference between reflected light and second reflected light is less than predetermined difference.
4. the imaging sensor according to 2, which is characterized in that on the upper surface of the reflecting part, described first
Phase difference between reflected light and second reflected light is zero.
5. the imaging sensor according to 1, which is characterized in that the reflecting part is one layer of structure or multilayered structure.
6. the imaging sensor according to 1, which is characterized in that the physical thickness of the reflecting part is configured as meeting such as
Minimum value in each physical thickness of lower condition：
So that the first reflected light that the light is reflected at the upper surface of the reflecting part and the light are in the reflection
Intensity of the second reflected light reflected at the lower surface in portion after superposition on the upper surface of the reflecting part, is greater than described
Intensity of first reflected light on the upper surface of the reflecting part, and it is greater than second reflected light in the upper of the reflecting part
Intensity on surface.
7. the imaging sensor according to 1, which is characterized in that the range of the physical thickness of the reflecting part is
8. the imaging sensor according to 1, which is characterized in that the reflecting part includes being located at the first pixel unit to be used in combination
In the first reflecting part of the light of first wave length and the second reflecting part of the light positioned at the second pixel unit and for second wave length, institute
First wave length is stated less than the second wave length, and the optical thickness of first reflecting part is less than the light of second reflecting part
Learn thickness.
9. the imaging sensor according to 1, which is characterized in that the physical thickness of the photodiode is configured as：
So that the light can be inhaled completely after being reflected back into the photodiode by the reflecting part by the photodiode
It receives.
10. the imaging sensor according to 1, which is characterized in that the photodiode is used for visible light, the photoelectricity
The range of the physical thickness of diode is
11. the imaging sensor according to 1, which is characterized in that the photodiode is used for infrared light, the photoelectricity
The range of the physical thickness of diode is
12. a method of form imaging sensor, which is characterized in that including：
Semiconductor substrate is provided, the semiconductor substrate for forming photodiode wherein；
Reflection is formed under the semiconductor substrate and in at least part of region for covering the photodiode
Portion, the upper surface of the reflecting part are directly contacted with the lower surface of the semiconductor substrate；
Interlevel dielectric layer, the upper surface of the interlevel dielectric layer and the reflecting part are formed under the reflecting part
Lower surface directly contact,
Wherein, refractive index of the refractive index between the material for forming the semiconductor substrate of the material of the reflecting part is formed
And it is formed between the refractive index of material of the interlevel dielectric layer.
13. the method according to 12, which is characterized in that the optical thickness of the reflecting part of formation is configured as：Make
The first reflected light for being reflected at the upper surface of the reflecting part of the light and the light in the lower surface of the reflecting part
Intensity of the second reflected light that place is reflected after superposition on the upper surface of the reflecting part, is greater than first reflected light
Intensity on the upper surface of the reflecting part, and it is greater than second reflected light on the upper surface of the reflecting part
Intensity.
14. the method according to 12, which is characterized in that forming the reflecting part is by least one in handling as follows
What kind carried out：Chemical vapor deposition process, physical vapour deposition (PVD) process and atomic layer deposition processing.
15. the method according to 12, which is characterized in that forming the reflecting part includes：It is formed and is located at the first pixel list
First reflecting part of member and the light for first wave length, and formation are located at the second pixel unit and are used for the light of second wave length
Second reflecting part,
Wherein, the first wave length is less than the second wave length, and the optical thickness of first reflecting part is less than institute
State the optical thickness of the second reflecting part.
16. the method according to 12, which is characterized in that further include：Before forming the reflecting part, partly led described
The photodiode is formed in body substrate.
17. the method according to 12, which is characterized in that the physical thickness of the photodiode of formation is configured
For：So that the light can be complete by the photodiode after being reflected back into the photodiode by the reflecting part
It absorbs.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of imaging sensor, which is characterized in that including：
Semiconductor substrate, for forming photodiode wherein；
Reflecting part under the semiconductor substrate and covers the photodiode at least partly, the reflecting part
Upper surface is directly contacted with the lower surface of the semiconductor substrate；And
Interlevel dielectric layer is located under the reflecting part, under the upper surface of the interlevel dielectric layer and the reflecting part
Surface directly contacts,
Wherein, refractive index and shape of the refractive index between the material for forming the semiconductor substrate of the material of the reflecting part are formed
Between refractive index at the material of the interlevel dielectric layer.
2. imaging sensor according to claim 1, which is characterized in that the optical thickness of the reflecting part is configured as：
So that the following table of the first reflected light that the light is reflected at the upper surface of the reflecting part and the light in the reflecting part
Intensity of the second reflected light reflected at face after superposition on the upper surface of the reflecting part is greater than first reflection
Intensity of the light on the upper surface of the reflecting part, and it is greater than second reflected light on the upper surface of the reflecting part
Intensity.
3. imaging sensor according to claim 2, which is characterized in that described on the upper surface of the reflecting part
Phase absolute value of the difference between first reflected light and second reflected light is less than predetermined difference.
4. imaging sensor according to claim 2, which is characterized in that described on the upper surface of the reflecting part
Phase difference between first reflected light and second reflected light is zero.
5. imaging sensor according to claim 1, which is characterized in that the reflecting part is one layer of structure or multilayer knot
Structure.
6. imaging sensor according to claim 1, which is characterized in that the physics of the reflecting part is configured as meeting such as
Minimum value in each physical thickness of lower condition：
So that the first reflected light that the light is reflected at the upper surface of the reflecting part and the light are in the reflecting part
Intensity of the second reflected light reflected at lower surface after superposition on the upper surface of the reflecting part, is greater than described first
Intensity of the reflected light on the upper surface of the reflecting part, and it is greater than second reflected light in the upper surface of the reflecting part
On intensity.
7. imaging sensor according to claim 1, which is characterized in that the range of the physical thickness of the reflecting part is
8. imaging sensor according to claim 1, which is characterized in that the reflecting part includes being located at the first pixel unit
And the second reflection of the first reflecting part of the light for first wave length and the light positioned at the second pixel unit and for second wave length
Portion, the first wave length is less than the second wave length, and the optical thickness of first reflecting part is less than second reflection
The optical thickness in portion.
9. imaging sensor according to claim 1, which is characterized in that the physical thickness of the photodiode is configured
For：So that the light can be complete by the photodiode after being reflected back into the photodiode by the reflecting part
It absorbs.
10. imaging sensor according to claim 1, which is characterized in that the photodiode is used for visible light, described
The range of the physical thickness of photodiode is
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| CN110797368A (en) * | 2019-12-10 | 2020-02-14 | 上海微阱电子科技有限公司 | Image sensor unit and method for manufacturing the same |
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