CN108831872A - bonding structure and bonding method - Google Patents
bonding structure and bonding method Download PDFInfo
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- CN108831872A CN108831872A CN201810588173.8A CN201810588173A CN108831872A CN 108831872 A CN108831872 A CN 108831872A CN 201810588173 A CN201810588173 A CN 201810588173A CN 108831872 A CN108831872 A CN 108831872A
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- insulating materials
- metal lead
- lead wire
- conductive fingers
- pattern layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32238—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The present invention provides a kind of bonding structure and bonding method, solve the problems, such as that driving chip in the prior art and substrate bonding are easy to appear laterally conducting short circuit using ACF glue in the process；The bonding structure includes several metal lead wires being formed on substrate, is filled with the first insulating materials between several metal lead wire intervals setting and two neighboring metal lead wire；Several conductive fingers being formed on driving chip, several conductive fingers intervals setting, and the second insulating materials is filled between two neighboring conductive fingers；The metal lead wire is electrically connected with conductive fingers contraposition, and the program can effectively avoid the phenomenon of the lateral short circuit of bonding from occurring by the way that insulating materials is arranged between adjacent metal lead wire and adjacent conductive fingers.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of bonding structure and bonding method.
Background technique
Display panel needs to carry out bonding to IC chip and substrate in module group procedure.Current bonding method is mainly
Anisotropy conductiving glue (ACF) is attached on the substrate for wanting bonding, the conductive fingers of the other end is thermally compressed on ACF, after solidification
Complete bonding processing procedure.During bonding, conducting particles plays the part of the pivotal player of vertical conducting, different side's conductive characteristic master in ACF
The pack completeness that depend on conducting particles, conducting particles number is more in glue material or the volume of conducting particles is bigger, Vertical Square
To contact resistance it is smaller, turn-on effect is also better, however, excessive or excessive conducting particles may be in the mistake of pressing
Cheng Zhong, be in contact with each other connection between lateral electrode, and causes the short circuit be laterally connected, thus the size of ACF conducting particles by
It is formed on bonding process, for common ACF particle size range at 3-5 μm, too big conducting particles can reduce the particle of each electrode contact
Number, at the same also be easy to cause adjacent electrode conducting particles contact and it is short-circuit, too small conducting particles particle buildup easy to form
Problem causes particle distribution Density inhomogeneity.
With the raising of display panel resolution ratio, shield structure base board metal lead wire, the conductive fingers of IC chip, two neighboring base
The distance between sheetmetal lead and the distance between two neighboring IC chip conductive fingers are all smaller and smaller, will using ACF glue
During IC chip and substrate carry out bonding, it is easy to the short circuit be laterally connected is caused, especially for two neighboring conduction
Easily occurs laterally short circuit when the distance between finger is less than 15 μm.Therefore it in IC chip and substrate bonding process, is realizing
Under the premise of IC chip and substrate good bond, how to guarantee the conducting up and down of the conductive fingers of substrate metal lead and IC chip
And lateral isolation, become the new challenge of bonding process.
Summary of the invention
In view of this, being solved high-resolution aobvious when preparing in the prior art the present invention provides a kind of bonding method
When showing panel, the problem of laterally conducting short circuit is easy to appear using ACF glue during driving chip and substrate bonding.
One embodiment of the invention provides a kind of bonding structure, including：
Several metal lead wires being formed on substrate, several metal lead wire intervals setting and two neighboring gold
Belong to and is filled with the first insulating materials between lead；
Several conductive fingers being formed on driving chip, several conductive fingers intervals setting, and adjacent two
The second insulating materials is filled between a conductive fingers；
The metal lead wire is electrically connected with conductive fingers contraposition, first insulating materials and the second insulating materials phase
It is same or different.
Preferably, the metal lead wire end is directly contacted with the conductive fingers.
Preferably, first insulating materials and the second insulating materials are respectively and independently selected from thermoset insulating resin material；
The first insulating materials between several described metal lead wires and the second insulation between several described conductive fingers
Material corresponds, and first insulating materials being oppositely arranged and second insulating materials are integrally formed.
Preferably, first insulating materials and the second insulating materials pass through printing and optional thermal cure step shape
At.
Preferably, it is electrically connected between the metal lead wire end and the conductive fingers by ACF glue.
As another side of the invention, the present invention also provides a kind of bonding methods, including：
The substrate that surface has metal lead wire pattern layer is provided, wherein including several in the metal lead wire pattern layer
Every the metal lead wire of setting, and the first insulating materials is filled between two neighboring metal lead wire；
The driving chip that surface has conductive fingers pattern layer is provided, wherein includes several in conductive fingers pattern layer
The second insulating materials is filled between the conductive fingers of setting, two neighboring conductive fingers；
By the conductive fingers figure of the metal lead wire pattern layer of the substrate surface and the driving chip surface
Pattern layer carries out contraposition fitting.
Preferably, the preparation step of substrate of the surface with metal lead wire pattern layer includes：In the substrate surface
Several spaced metal lead wires are prepared, and form the first insulating materials between adjacent metal lead.
The preparation step of driving chip of the surface with conductive fingers pattern layer include：On the driving chip surface
Prepare several spaced conductive fingers；And the second insulating materials is formed between adjacent conductive finger.
Preferably, the contraposition be bonded the step of include：
In the metal lead wire pattern layer of the substrate surface and the conductive fingers figure on the driving chip surface
ACF glue is formed between pattern layer；
By the conductive fingers figure of the metal lead wire pattern layer of the substrate surface and the driving chip surface
Pattern layer carries out contraposition pressing and pastes.
Preferably, first insulating materials and second insulating materials are thermoset insulating resin material；
The contraposition be bonded the step of include：
By the conductive fingers figure of the metal lead wire pattern layer of the substrate surface and the driving chip surface
Pattern layer is aligned；And
Be heating and curing first insulating materials and second insulating materials.
Preferably, be heating and curing first insulating materials and second insulating materials the step of in；Using thermal head
Apply pressure to the engaging portion of the metal lead wire pattern layer and the conductive fingers pattern layer.
Using a kind of bonding structure of technical solution of the present invention, substrate and formation including forming several metal lead wires
The driving chip of several conductive fingers, by being filled with first in the space between metal lead wire two neighboring on substrate absolutely
Edge layer is filled with second insulating layer in the space on driving chip between two neighboring conductive fingers, can effectively avoid nation
The phenomenon of fixed laterally short circuit occurs.
Detailed description of the invention
Fig. 1 show a kind of structural schematic diagram of bonding structure of one embodiment of the invention offer.
Fig. 2 show a kind of structural schematic diagram of bonding structure of one embodiment of the invention offer.
Fig. 3 show a kind of structural schematic diagram of bonding structure of one embodiment of the invention offer.
Fig. 4 show a kind of flow diagram of bonding method of one embodiment of the invention offer.
Fig. 5 show the path of printer printing insulating materials in a kind of bonding method of one embodiment of the invention offer
Figure.
Fig. 6 show a kind of flow diagram of bonding method of one embodiment of the invention offer.
Fig. 7 show a kind of flow diagram of bonding method of one embodiment of the invention offer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Fig. 1 show a kind of structural schematic diagram of bonding structure of one embodiment of the invention offer, as shown in Figure 1, the nation
Determining structure includes：
Substrate 1, including forming several metal lead wires 11 on substrate 1, wherein several metal lead wires 11 interval is set
It sets, and is filled with the first insulating materials 12 between adjacent picture metal lead wire 11；Driving chip 2, including it is formed in driving chip 2
On several conductive fingers 21, wherein the setting of several conductive fingers 21 interval, and is filled out between two neighboring conductive fingers 21
Filled with the second insulating materials 22；Wherein, metal lead wire 11 is electrically connected with the contraposition of conductive fingers 21；Wherein 12 He of the first insulating materials
Material used in second insulating materials 22 is same or different.
The bonding structure of the embodiment of the present invention, the metal lead wire pattern layer being made of metal lead wire 11 and drive on substrate 1
The conductive fingers pattern layer being made of conductive fingers 21 on dynamic chip 2 directly aligns electrical connection, the state being on, between
There is no the presence of conductive materials, and insulating layer 3 is equipped between substrate 1 and driving chip 2, and substrate 1 and driving chip 2 are not
The phenomenon that will appear laterally conducting.
In an embodiment of the present invention, it is exhausted to be respectively and independently selected from thermosetting property for the first insulating materials 12 and the second insulating materials 22
Edge resin material；As shown in Fig. 2, the first insulating materials 12 between several metal lead wires 11 and to be located at several conductive
The second insulating materials 22 between finger 12 is arranged in a one-to-one correspondence, and the first insulating materials 12 of corresponding setting and the second insulation
Material 22 is integrally formed.
It should be appreciated that the first insulating materials 12 and the second insulating materials 22 can select thermosetting property according to actual process demand
One of dielectric resin material, and the first insulating materials 12 and the second insulating materials 22 identical can also be different, such as
In one embodiment of the invention, the first insulating materials 12 uses phenolic resin, and the second insulating materials 22 uses epoxy resin；In this hair
In bright other embodiments, the first insulating materials 12 and the second insulating materials 22 can use polyester resin, therefore the present invention simultaneously
This is not construed as limiting.Be integrally formed and refer in the present invention, the first insulating materials 12 and the second insulating materials 22 can simultaneously into
Row curing process forms integral structure so that the two is crosslinked together during curing process.
In an embodiment of the present invention, metal lead wire 11 and conductive fingers 21 contraposition electrical connection when, 11 end of metal lead wire and
21 end of conductive fingers directly contacts, to realize the electrical connection between metal lead wire 11 and conductive fingers 21.The present invention other
In embodiment, 11 end of metal lead wire and 21 end of conductive fingers can also be electrically connected by ACF glue 3,11 end of metal lead wire with lead
Electric hand, which refers to, coats one layer of very thin ACF glue 3 between 21 ends, structure as shown in Figure 3, and wherein the thickness of ACF glue 3 can be 3-6 μm；
ACF glue will not be filled in the gap between adjacent wires 11 and adjacent conductive finger 21 at this time, can effectively avoid nation
The phenomenon of fixed laterally short circuit occurs；And ACF glue can not only realize the electrical connection between metal lead wire 11 and conductive fingers 21,
But also it can be improved the binding force between metal lead wire 11 and conductive fingers 21.
One embodiment of the invention additionally provides a kind of bonding method, as shown in figure 4, the bonding method, including：
Step 101：The substrate that surface has metal lead wire pattern layer is provided, includes wherein several in metal lead wire pattern layer
A spaced metal lead wire, and the first insulating materials is filled between two neighboring metal lead wire；
When preparing substrate of the surface with metal lead wire pattern layer and the first insulating materials, several metal lead wires are prepared
And the first insulating materials sequencing between adjacent metal lead can be selected according to actual process demand, the present invention one
Embodiment prepares gold in substrate surface first when preparing substrate of the surface with metal lead wire pattern layer and the first insulating materials
Belong to lead pattern layer, then the surface on substrate between adjacent metal lead prepares the first insulating materials again.The present invention to
The sequencing that metal lead wire pattern layer and the first insulating materials are prepared on substrate is not construed as limiting.
It it should be appreciated that the substrate can be selected according to the demand of actual fabrication driving circuit, such as can be flexibility
Substrate, or rigid substrates, the present invention is to the material of substrate and with no restriction.
When preparing substrate of the surface with metal lead wire pattern layer and the first insulating materials, including：
Several spaced metal lead wires are prepared in substrate surface, wherein several metal lead wires collectively form metal
Lead pattern layer；
The first insulating materials is formed between adjacent metal lead, due to the spacing between two neighboring metal lead wire compared with
Small, when forming the first insulating materials between adjacent metal lead, the pixel of display panel is higher, two neighboring metal lead wire it
Between spacing with regard to smaller, the technology that common preparation method needs to overcome is more, is more difficult to realize, therefore one embodiment of the invention
The first insulating materials is printed between two neighboring metal lead wire using OLED printer, and in print procedure, drop body
Product precision controlling can make the oled panel of higher pixel within pl.
During OLED printer prints the first insulating materials between two neighboring metal lead wire on substrate, in order to
The first insulating layer, one embodiment of the invention are preferably printed, used printing path is the print path of every layer of insulation material layer
Diameter is identical, and every layer of printing path is reciprocation type printing path, as shown in Figure 5.It should be appreciated that printing path can be according to specific
Substrate on the distance between metal lead wire and metal lead wire distribution situation and select, therefore the present invention makes printer
Printing path when printing insulating materials is not construed as limiting.
When substrate is flexible base board, printer prints the process of the first insulating materials between two neighboring metal lead wire
In, in order to enable the first insulating materials to print on flexible substrates, one embodiment of the invention is beaten in print procedure
The print speed of print machine is 70mm/s, and the diameter of the spray head control dropping liquid of printer is 5 μm.It should be appreciated that the printing of printer
The diameter for the drop that speed and printer head can control, can be according to metal lead wire in the material and substrate of substrate
Distribution situation select, such as when metal lead wire distribution comparatively dense on flexible substrates, it is necessary to which spray head can
The diameter of the drop of control is with regard to smaller printer, therefore the present invention can to the print speed and printer head of printer
The size of control liquid-drop diameter is not construed as limiting.
Step 102：The driving chip that surface has conductive fingers pattern layer is provided, if wherein conductive fingers pattern layer includes
A spaced conductive fingers are done, are filled with the second insulating materials between two neighboring conductive fingers.
Several conductive fingers in the step and the second insulating layer being filled between two neighboring conductive fingers
Preparation process is identical as step 101, no longer repeats herein.
Step 103：The metal lead wire pattern layer of substrate surface and the conductive fingers pattern layer on driving chip surface are carried out
Contraposition fitting；First insulating materials and the second insulating materials are sticky together, so that substrate and driving chip can be tight
It is closely connected to be combined, the bonding of completing substrate and driving chip.
It should be appreciated that the first insulating materials and the second insulating materials can be identical, it can also be different.In one embodiment of the invention,
First insulating materials and the second insulating materials are respectively one of thermoset insulating resin material, and the first insulating materials and
Two insulating materials identical can also be different, such as in an embodiment of the present invention, and the first insulating materials uses phenolic resin, the
Two insulating materials use epoxy resin；In other embodiments of the present invention, the first insulating materials and the second insulating materials can be same
When use polyester resin, therefore whether the present invention to the type of the first insulating materials and the second insulating materials and identical does not limit
It is fixed.
In order to enable substrate and driving chip can be even closer be bonded, in one embodiment of the invention, the first insulation material
Material and the second insulating materials each be selected from one of thermoset insulating resin material, then the metal lead wire pattern layer on substrate with
Conductive fingers pattern layer on driving chip aligns the step of being bonded：1031：First by the metal lead wire on substrate surface
Conductive fingers pattern layer in pattern layer and driving chip is aligned；1032：Then be heating and curing the first insulating materials and
Two insulating materials combine together as shown in fig. 6, the first insulating materials and the second insulating materials are solidified after the heating, so that base
The conductive fingers pattern layer in metal lead wire pattern layer and driving chip surface in plate surface fits together, so that base
Plate and driving chip is even closer fits together.
It should be appreciated that the heating process of the first insulating materials and the second insulating materials, it can be according to the type of insulating materials
It is selected, in one embodiment of the invention when insulating materials uses thermosetting resin adhesive, the heating process of step 1032 is divided into
Following two steps, as shown in Figure 7：
Step 10321：Heating head is attached far from the surface of conductive fingers pattern layer in driving chip, is used for even heat
Be supplied to the first insulating materials and the second insulating materials so that the first insulating materials and the second insulating materials are heated evenly；
Step 10322：Heating head is heated, wherein heating method uses the heating method of heat pressing type using bonding machines
Heating head is heated, applies pressure to the engaging portion of the metal lead wire pattern layer and the conductive fingers pattern layer.This
It invents in an embodiment, when the first insulating materials and the second insulating materials each are selected from thermoset insulating resin material, uses heat
When the heating method of pressure type heats heating head, the 90% of thermosetting resin adhesive solidification temperature is reached in 2s, it is total to heat
Time is 6s, thermosetting resin adhesive cure shrinkage, and viscosity is higher after hardening, so that substrate and driving chip
What is be bonded is even closer.
Therefore, when being heated to the first insulating materials and the second insulating materials, as long as the method for heating and first is absolutely
Insulating materials used in edge material, the second insulating materials is adapted, and enables to substrate even closer with driving chip
Fitting, the present invention is not construed as limiting heating means.
Bonding method provided in an embodiment of the present invention can combine closely substrate and driving chip, metal lead wire pattern
It being filled between layer, between conductive fingers pattern layer by insulating materials, the phenomenon for effectively avoiding laterally short circuit occurs,
And without using expensive ACF glue in whole process.
In order to improve the combination that the metal lead wire pattern layer on substrate and the conductive fingers pattern layer on driving chip are bonded
Power, in one embodiment of the invention, by the metal lead wire pattern layer on substrate and the conductive fingers pattern layer pair on driving chip
When the fitting of position, between the conductive fingers pattern layer in metal lead wire pattern layer and driving chip surface first on the surface of the substrate
One layer of very thin ACF glue is formed, then again by the conductive fingers of the metal lead wire pattern layer of substrate surface and driving chip surface
Pattern layer carries out contraposition pressing and pastes.The embodiment of the present invention, using less ACF glue, so that the gold on substrate
The conductive fingers pattern layer fitting belonged on lead pattern layer and driving chip is close, increases the secured of bonding structure.
In this embodiment, by the first insulating materials of ACF gluing knot and the second insulating materials, for this purpose, the first insulation material
The curing process step of material and the second insulating materials is not limited to the metal lead wire pattern layer of the substrate surface and institute
State driving chip surface the conductive fingers pattern layer aligned after carry out, can also be first to the first insulating materials and the
The step of two insulating materials carry out curing process, carry out contraposition fitting again later.
One embodiment of the invention provides a kind of display device, including：Display panel；It is luminous for being provided for display device
Phenomenon；Driving circuit, it is luminous for controlling the display panel；Wherein driving circuit includes such as the aforementioned bonding structure.
The bonding structure that the driving circuit for the display device that one embodiment of the invention provides uses, the metal lead wire on substrate
Conductive fingers pattern layer in pattern layer and driving chip directly aligns fitting, the state being on, between there is no conductive
The presence of substance, and insulating materials is equipped between substrate and driving chip, substrate and driving chip are not in laterally to lead
Logical phenomenon, and then display device will not be connected phenomenon because of the transverse direction of bonding structure and break down, and reduce display device
The probability of failure.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, made any modification, equivalent replacement etc. be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of bonding structure, which is characterized in that the bonding structure includes：
Several metal lead wires being formed on substrate, several described metal lead wire intervals are arranged and two neighboring metal draws
The first insulating materials is filled between line；
Several conductive fingers being formed on driving chip, the setting of described several conductive fingers intervals, and two neighboring lead
Electric hand is filled with the second insulating materials between referring to；
The contraposition of the metal lead wire and the conductive fingers is electrically connected, first insulating materials and the second insulating materials it is identical or
It is different.
2. bonding structure according to claim 1, which is characterized in that the metal lead wire end and the conductive fingers are direct
Contact.
3. bonding structure according to claim 1, which is characterized in that first insulating materials and the second insulating materials point
It is not independently selected from thermoset insulating resin material；The first insulating materials between several described metal lead wires and it is located at described
The second insulating materials between several conductive fingers corresponds, and first insulating materials that is oppositely arranged and described the
Two insulating materials are integrally formed.
4. bonding structure according to claim 1, which is characterized in that first insulating materials and the second insulating materials are logical
It crosses printing and optional thermal cure step is formed.
5. bonding structure according to claim 1, which is characterized in that between the metal lead wire end and the conductive fingers
It is electrically connected by ACF glue.
6. a kind of bonding method, which is characterized in that including：
The substrate that surface has metal lead wire pattern layer is provided, wherein including that several intervals are set in the metal lead wire pattern layer
The metal lead wire set, and the first insulating materials is filled between two neighboring metal lead wire；
The driving chip that surface has conductive fingers pattern layer is provided, wherein includes that several intervals are set in conductive fingers pattern layer
The conductive fingers set, and the second insulating materials is filled between two neighboring conductive fingers；
By the conductive fingers pattern layer of the metal lead wire pattern layer of the substrate surface and the driving chip surface
Carry out contraposition fitting.
7. bonding method according to claim 6, which is characterized in that
The preparation step of substrate of the surface with metal lead wire pattern layer include：Several are prepared in the substrate surface
Every the metal lead wire of setting, and the first insulating materials is formed between adjacent metal lead；
The preparation step of driving chip of the surface with conductive fingers pattern layer include：It is prepared on the driving chip surface
Several spaced conductive fingers；And the second insulating materials is formed between adjacent conductive finger.
8. bonding method according to claim 6, which is characterized in that the contraposition be bonded the step of include：
In the metal lead wire pattern layer of the substrate surface and the conductive fingers pattern layer on the driving chip surface
Between formed ACF glue；
By the conductive fingers pattern layer of the metal lead wire pattern layer of the substrate surface and the driving chip surface
Contraposition pressing is carried out to paste.
9. bonding method according to claim 6, which is characterized in that first insulating materials and second insulation material
Material is thermoset insulating resin material；
The contraposition be bonded the step of include：
By the conductive fingers pattern layer of the metal lead wire pattern layer of the substrate surface and the driving chip surface
It is aligned；And
Be heating and curing first insulating materials and second insulating materials.
10. bonding method according to claim 9, which is characterized in that be heating and curing first insulating materials and described
In the step of second insulating materials；Combination using thermal head to the metal lead wire pattern layer and the conductive fingers pattern layer
Portion applies pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810588173.8A CN108831872A (en) | 2018-06-08 | 2018-06-08 | bonding structure and bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810588173.8A CN108831872A (en) | 2018-06-08 | 2018-06-08 | bonding structure and bonding method |
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| CN108831872A true CN108831872A (en) | 2018-11-16 |
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| CN201810588173.8A Pending CN108831872A (en) | 2018-06-08 | 2018-06-08 | bonding structure and bonding method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109597527A (en) * | 2018-12-31 | 2019-04-09 | 深圳莱宝高科技股份有限公司 | A kind of bonding structure, touch screen and touch display screen |
| CN110544434A (en) * | 2019-09-04 | 2019-12-06 | 云谷（固安）科技有限公司 | display panel, manufacturing method thereof and display device |
| CN111312078A (en) * | 2020-03-05 | 2020-06-19 | 武汉华星光电半导体显示技术有限公司 | Display panel and side bonding method thereof |
| CN111355037A (en) * | 2020-02-17 | 2020-06-30 | 南昌欧菲显示科技有限公司 | Binding structure, binding method and electronic device |
| WO2021232529A1 (en) * | 2020-05-18 | 2021-11-25 | 武汉华星光电半导体显示技术有限公司 | Binding region circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109597527A (en) * | 2018-12-31 | 2019-04-09 | 深圳莱宝高科技股份有限公司 | A kind of bonding structure, touch screen and touch display screen |
| CN110544434A (en) * | 2019-09-04 | 2019-12-06 | 云谷（固安）科技有限公司 | display panel, manufacturing method thereof and display device |
| CN110544434B (en) * | 2019-09-04 | 2022-02-22 | 云谷（固安）科技有限公司 | Display panel, manufacturing method thereof and display device |
| CN111355037A (en) * | 2020-02-17 | 2020-06-30 | 南昌欧菲显示科技有限公司 | Binding structure, binding method and electronic device |
| CN111312078A (en) * | 2020-03-05 | 2020-06-19 | 武汉华星光电半导体显示技术有限公司 | Display panel and side bonding method thereof |
| CN111312078B (en) * | 2020-03-05 | 2022-03-08 | 武汉华星光电半导体显示技术有限公司 | Display panel and side bonding method thereof |
| WO2021232529A1 (en) * | 2020-05-18 | 2021-11-25 | 武汉华星光电半导体显示技术有限公司 | Binding region circuit |
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Application publication date: 20181116 Assignee: Bazhou Yungu Electronic Technology Co., Ltd.|Kunshan Institute of technology new flat panel display technology center Co., Ltd.|Kunshan Guoxian photoelectric Co., Ltd Assignor: The valley (Guan) Technology Co. Ltd. Contract record no.: X2019990000155 Denomination of invention: Bonding structure and bonding method License type: Common License Record date: 20191030 |
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