CN108831764A - A kind of preparation method of low noise thin film capacitor - Google Patents
A kind of preparation method of low noise thin film capacitor Download PDFInfo
- Publication number
- CN108831764A CN108831764A CN201810522226.6A CN201810522226A CN108831764A CN 108831764 A CN108831764 A CN 108831764A CN 201810522226 A CN201810522226 A CN 201810522226A CN 108831764 A CN108831764 A CN 108831764A
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- Prior art keywords
- film roll
- film
- low noise
- thin film
- preparation
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- 239000003990 capacitor Substances 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims description 56
- 239000003822 epoxy resin Substances 0.000 claims description 17
- 229920000647 polyepoxide Polymers 0.000 claims description 17
- 238000007731 hot pressing Methods 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 15
- 150000008064 anhydrides Chemical class 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 238000013021 overheating Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims description 2
- 239000010426 asphalt Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000011104 metalized film Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/003—Apparatus or processes for encapsulating capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/006—Apparatus or processes for applying terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/04—Drying; Impregnating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention belongs to metallized capacitor production technical fields, and in particular to a kind of preparation method of low noise thin film capacitor.The preparation method of low noise thin film capacitor of the invention, the low noise thin film capacitor prepared maintains original electrical characteristic, while the decibel of its noise test is less than 25dB, meets requirement of the smart home to noise decibel.
Description
Technical field
The invention belongs to metallized capacitor production technical fields, and in particular to a kind of preparation of low noise thin film capacitor
Method.
Background technique
With the continuous development of Intelligent House Light, market is higher and higher to the requirement that desk lamp with dimmer switch is mute, and desk lamp with dimmer switch is special
It is when night use, the problem of noise is easier to highlight, therefore proposes for the LED desk lamp with dimmer switch of smart home ultralow
The demand of noise.Existing smart home is≤30dB to the noise requirements of illuminator, this present requirement cannot expire again
The demand in sufficient market, therefore LED desk lamp with dimmer switch proposes the super low noise requirement of 25dB, and PFC, DC- in LED light modulation circuit for lamp
The thin film capacitor of LINK directly affects LED desk lamp with dimmer switch noise decibel.But it is past with the capacitor in existing LED light modulation circuit for lamp
It can be more than 25dB and close to 30dB toward noise, it is difficult to meet smart home to the noise requirements of illuminator.
Summary of the invention
It is an object of the invention to：In view of the above problems, a kind of preparation of low noise thin film capacitor is provided
Method, the low noise thin film capacitor prepared maintains original electrical characteristic, while the decibel of its noise test is less than
25dB meets requirement of the smart home to noise decibel.
To achieve the goals above, the technical solution adopted by the present invention is：The invention discloses a kind of low noise thin-film electros
The preparation method of container, includes the following steps：
S1), by two panels metallizing film winding to form film roll；
S2), by film roll hot pressing, hot pressing temperature is 135 DEG C, hot pressing time 270-600s；By the film Jing Guo hot pressing
Volume heat treatment, heat treatment temperature are 140 DEG C, heat treatment time 8.5h；Film roll through Overheating Treatment is naturally cooling to often
Temperature；
S3), metal spraying is distinguished at the both ends of the film roll obtained after step S2) processing；
S4), the both ends of the film roll obtained after step S3) processing are taken into burr, and is welded respectively at the both ends of film roll
Connect lead；
S5), carry out the outermost layer side of the film roll obtained after step S4) processing to iron patagium；
S6), the lead of the film roll obtained after step S5) processing is applied into silicone oil；Film roll is impregnated in acid modified anhydro ring
In oxygen resin then resolidification, and film roll dipping vacuum degree be less than or equal to -0.092MPa；
S7), the cured modified anhydride epoxy resin surface of step S6) is coated into one layer of flexible epoxy powder, then machine again
Solidification is repaired, product is obtained.
Further, plasma treatment is carried out to the two sides of metalized film before step S1).
Further, step S7) in coating epoxy powder thickness be more than or equal to 0.5mm.
By adopting the above-described technical solution, the beneficial effects of the invention are as follows：
The preparation method of low noise thin film capacitor of the invention uses hot pressing temperature for 135 DEG C, so that the two of film roll
The fitting of piece metalized film；Film roll after hot pressing is subjected to heat treatment 8.5h at a temperature of 140 DEG C, it then will be through overheating
The film roll of processing is naturally cooling to room temperature, and conducive to the stress eliminated after film roll hot pressing, and slow cooling makes its form stable；
So that noise becomes smaller when the low noise thin film capacitor work of preparation.When film roll is impregnated in modified anhydride epoxy resin, and
The vacuum degree of film roll dipping is less than or equal to -0.092MPa, and the air inside film roll is excluded as far as possible, allows epoxy
Resin is sufficient filling with, and reduces film layer air gap, is changed using modified anhydride epoxy resin using good insulation characterisitic after its solidification
Material will not influence any electrical characteristic of capacitor after hardening, be very good packing material, so that the low noise of preparation
Noise becomes smaller when sound thin film capacitor works.One layer of flexible epoxy powder is coated in cured modified anhydride epoxy resin surface,
Play the role of to noise absorption.Finally by low noise made from the preparation method of low noise thin film capacitor of the invention
Thin film capacitor is when testing initial point test with sinusoidal waveform peak position, and noise is less than 25dB, and the voltage of this position
Variation is most fast, and amplitude is most obvious, therefore the low noise thin film capacitor prepared meets the capacitor in LED light modulation circuit for lamp to noise
Requirement.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method of low noise thin film capacitor of the invention；
Fig. 2 is the structural schematic diagram of low noise thin film capacitor prepared by the present invention；
Fig. 3 is the A-A of low noise thin film capacitor prepared by the present invention to sectional view；
Fig. 4 is two panels metalized film dislocation stacked configuration schematic diagram of the invention；
Appended drawing reference：
10- epoxy powder outer layer, 11- lead, 12- modified anhydride epoxy resin layer, 13- film roll, 130- conductive metal layer,
First metalized film of 131b-, second metalized film of 131c-.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings, to enable those skilled in the art referring to specification text
Word can be implemented accordingly.
As shown in Figure 1, including the following steps the present invention provides a kind of preparation method of low noise thin film capacitor：
S0), metalized film being subjected to double-sided plasma processing, one side destroys the salient point on metalized film two sides,
The two sides of another aspect metalized film is conducive to two panels film in low noise thin film capacitor there is no too smooth phenomenon
Sufficiently fitting, to reduce the noise decibel of low noise thin film capacitor；The film of becoming attached to of metalized film is polyester film；
S1), first metalized film 131b and second metalized film 131c dislocation as shown in Figure 4 is carried out to stack,
The first metalized film 131b and second metalized film 131c that dislocation is stacked are wound to form film roll 13, wherein first
First lead end of the protruding end of piece metalized film 131b as film roll 13, and the protruding end of second metalized film 131c is made
For the second lead end of film roll 13；
S2), by 13 hot pressing of film roll, hot pressing temperature is 135 DEG C, hot pressing time 270-600s, so that piece of metal
Change film 131b and second metalized film 131c fitting；Film roll 13 Jing Guo hot pressing is heat-treated, heat treatment temperature 140
DEG C, heat treatment time 8.5h；Film roll 13 through Overheating Treatment is naturally cooling to room temperature, answering after substantially eliminating hot pressing
Power, and slow cooling makes its form stable；Then by the first lead end of the film roll 13 after Temperature fall and the second lead end
Exposure mask is carried out, also just covers and is attached to first lead end or the second lead end to avoid the dust of workshop.
S3), by the first lead end of film roll 13 and the second lead end difference metal spraying that are obtained after step S2) processing and
Form conductive metal layer；
S4), carry out the film roll 13 obtained after step S3) processing and its conductive metal layer to take burr, and in film
Lead 11 is respectively welded in the conductive metal layer at the both ends of volume 13, and the material of lead 11 is tinning steel-in-copper；
S5), carry out the outermost layer side of the film roll 13 obtained after step S4) processing to iron patagium, by film roll 13
Outermost polyester film on gauffer or irregular place flattened；
S6), the lead 11 of the film roll 13 obtained after step S5) processing is applied into silicone oil, that is to say and applies silicon process；By film
Volume 13 be impregnated in modified anhydride epoxy resin then resolidification, and film roll 13 impregnate vacuum degree be less than or equal to-
0.092MPa；When film roll 13 is impregnated in modified anhydride epoxy resin, and the vacuum degree that film roll 13 impregnates is less than or waits
In -0.092MPa, modified anhydride epoxy resin layer 12 is formed, the air inside film roll 13 is excluded as far as possible, allows epoxy
Resin is sufficient filling with, and reduces film layer air gap, is changed using modified anhydride epoxy resin using good insulation characterisitic after its solidification
Material will not influence any electrical characteristic of capacitor after hardening, be very good packing material, so that the low noise of preparation
Noise becomes smaller when sound thin film capacitor works；The model Dongguan bliss Electronic Science and Technology Co., Ltd. of modified anhydride epoxy resin is raw
The epoxy resin of the FC-505A-2/FC-505B-2 (HF) of production；
S7), the cured modified anhydride epoxy resin surface of step S6) is coated into one layer of flexible epoxy powder, forms epoxy
Powder outer layer 10, in the present embodiment, cured modified anhydride epoxy resin are cuboid ring-type, and epoxy powder outer layer is also long
Cube is cyclic annular；The thickness for coating epoxy powder is more than or equal to 0.5mm, not only the good appearance and insulation that ensure that capacitor
Characteristic, while flexible material can play the role of very good Vibrant buffer；Then machine maintenance solidifies again, that is, to capacitor
Outer wall is polished, and product is obtained；
S8), then outer inspection is carried out, band is torn, is sorted in product surface lettering, acceptance, the processes such as packaging form final production
Product.
The product of this implementation is detected, voltage-withstand test is greater than 1.4UR；Durability is surveyed in 85 DEG C, and operating voltage is
1.25UR, continues working 1000h, and capacitance decaying is less than the 10% of lamp energy；Noise is test with sinusoidal waveform peak position
When initial point is tested, noise is less than 25dB.UR is voltage rating.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (3)
1. a kind of preparation method of low noise thin film capacitor, which is characterized in that include the following steps：
S1), by two panels metallizing film winding to form film roll；
S2), by film roll hot pressing, hot pressing temperature is 135 DEG C, hot pressing time 270-600s；By the film roll heat Jing Guo hot pressing
Processing, heat treatment temperature are 140 DEG C, heat treatment time 8.5h；Film roll through Overheating Treatment is naturally cooling to room temperature；
S3), metal spraying is distinguished at the both ends of the film roll obtained after step S2) processing；
S4), the both ends of the film roll obtained after step S3) processing are taken into burr, and is respectively welded and draws at the both ends of film roll
Line；
S5), carry out the outermost layer side of the film roll obtained after step S4) processing to iron patagium；
S6), the lead of the film roll obtained after step S5) processing is applied into silicone oil；Film roll is impregnated in modified anhydride asphalt mixtures modified by epoxy resin
In rouge then resolidification, and film roll dipping vacuum degree be less than or equal to -0.092MPa；
S7), the cured modified anhydride epoxy resin surface of step S6) is coated into one layer of flexible epoxy powder, then machine maintenance is solid again
Change, obtains product.
2. the preparation method of low noise thin film capacitor as described in claim 1, which is characterized in that gold before step S1)
The two sides of categoryization film carries out plasma treatment.
3. the preparation method of low noise thin film capacitor as described in claim 1, which is characterized in that step S7) in apply shroud
The thickness of oxygen powder is more than or equal to 0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810522226.6A CN108831764B (en) | 2018-05-28 | 2018-05-28 | Preparation method of low-noise film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810522226.6A CN108831764B (en) | 2018-05-28 | 2018-05-28 | Preparation method of low-noise film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108831764A true CN108831764A (en) | 2018-11-16 |
| CN108831764B CN108831764B (en) | 2020-03-24 |
Family
ID=64146100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810522226.6A Active CN108831764B (en) | 2018-05-28 | 2018-05-28 | Preparation method of low-noise film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108831764B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114121488A (en) * | 2021-10-29 | 2022-03-01 | 安徽赛福电容有限公司 | Metallized film, method and apparatus for manufacturing the same, and capacitor |
| CN115616295A (en) * | 2022-12-15 | 2023-01-17 | 四川中星电子有限责任公司 | Capacitor capacity detection device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399118A (en) * | 2007-09-30 | 2009-04-01 | 扬州高强电子有限公司 | Technique for processing non-inductive organic film capacitor |
| CN102426919A (en) * | 2011-08-17 | 2012-04-25 | 六和电子（江西）有限公司 | Production process for low-noise metallic film capacitor |
| CN102938317A (en) * | 2011-08-16 | 2013-02-20 | 深圳塑镕电容器有限公司 | Manufacturing method of low-noise capacitors and low-noise capacitor |
| CN204991479U (en) * | 2015-09-30 | 2016-01-20 | 四川中星电子有限责任公司 | Coiling formula SMD metallization polyester film condenser |
-
2018
- 2018-05-28 CN CN201810522226.6A patent/CN108831764B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399118A (en) * | 2007-09-30 | 2009-04-01 | 扬州高强电子有限公司 | Technique for processing non-inductive organic film capacitor |
| CN102938317A (en) * | 2011-08-16 | 2013-02-20 | 深圳塑镕电容器有限公司 | Manufacturing method of low-noise capacitors and low-noise capacitor |
| CN102426919A (en) * | 2011-08-17 | 2012-04-25 | 六和电子（江西）有限公司 | Production process for low-noise metallic film capacitor |
| CN204991479U (en) * | 2015-09-30 | 2016-01-20 | 四川中星电子有限责任公司 | Coiling formula SMD metallization polyester film condenser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114121488A (en) * | 2021-10-29 | 2022-03-01 | 安徽赛福电容有限公司 | Metallized film, method and apparatus for manufacturing the same, and capacitor |
| CN114121488B (en) * | 2021-10-29 | 2024-04-05 | 安徽赛福电容有限公司 | Metallized film, method and apparatus for manufacturing the same, and capacitor |
| CN115616295A (en) * | 2022-12-15 | 2023-01-17 | 四川中星电子有限责任公司 | Capacitor capacity detection device |
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| Publication number | Publication date |
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| CN108831764B (en) | 2020-03-24 |
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